CN111462684A - Micro L ED display unit and Micro L ED display panel thereof - Google Patents
Micro L ED display unit and Micro L ED display panel thereof Download PDFInfo
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- CN111462684A CN111462684A CN202010420930.8A CN202010420930A CN111462684A CN 111462684 A CN111462684 A CN 111462684A CN 202010420930 A CN202010420930 A CN 202010420930A CN 111462684 A CN111462684 A CN 111462684A
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- film transistor
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- Physics & Mathematics (AREA)
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- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
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Abstract
The application discloses a Micro L ED display unit, which comprises a driving circuit, a light emitting device and a photosensitive device, wherein the driving circuit is used for providing a driving signal, the Micro L ED display unit provided by the application controls the light emitting device to display through the driving signal output by the driving circuit, the photosensitive device senses the light emitting intensity of the light emitting device, when the light emitting intensity reaches a threshold value, the photosensitive device is automatically conducted, the current value flowing through the light emitting device can be automatically adjusted, and the uniformity of display is balanced.
Description
Technical Field
The application relates to the technical field of display, especially relates to self-luminous display technology, concretely relates to Micro L ED display element and Micro L ED display panel.
Background
Therefore, electronic display screens such as liquid crystal display panels and O L ED display panels are widely adopted, and the display technologies have some defects such as L CD display contrast, O L ED display stability and the like, so that the Micro L ED (Micro light emitting diode) technology attracts the attention of wide researchers with ultrahigh display quality and stability.
However, the driving current of the Micro L ED is large, and the line transmitting the driving current has voltage drop loss (IRdrop), which causes the problem of display nonuniformity.
Disclosure of Invention
The application provides a Micro L ED display unit, and the problem of the display nonuniformity of the Micro L ED is solved.
In a first aspect, the present application provides a Micro L ED display unit, which includes a driving circuit, a light emitting device and a photosensitive device, wherein the driving circuit is configured to provide a driving signal, the light emitting device is connected to an output terminal of the driving circuit and a first power negative signal and configured to receive the driving signal for displaying, and the photosensitive device is connected to an output terminal of the driving circuit, an input terminal of the light emitting device and a second power negative signal and configured to turn on itself according to a light emitting intensity of the light emitting device to adjust a current of the light emitting device.
In a first implementation form of the first aspect as such, the light-sensing device is a photodiode; the positive electrode of the photodiode is connected with the output end of the driving circuit and the input end of the light-emitting device; the cathode of the photodiode is connected with a second negative power supply signal.
In a second embodiment according to the first aspect, the light emitting device is a micro light emitting diode; the anode of the micro light-emitting diode is connected with the output end of the driving circuit and the input end of the photosensitive device; the negative electrode of the micro light-emitting diode is connected with a first power supply negative signal.
In a third implementation form of the first aspect, the driving circuit includes a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a seventh thin film transistor, and a capacitor; the power positive signal is connected with the input end of the first thin film transistor and the first end of the capacitor; the output end of the first thin film transistor is connected with the input end of the second thin film transistor and the output end of the third thin film transistor; the input end of the third thin film transistor is connected with the data signal; the output end of the second thin film transistor is connected with the input end of the fourth thin film transistor and the output end of the fifth thin film transistor; the Nth-stage scanning signal is connected with the control end of the third thin film transistor, the control end of the fifth thin film transistor and the control end of the seventh thin film transistor; the Nth-stage light-emitting control signal is connected with the control end of the first thin film transistor and the control end of the fourth thin film transistor; the second end of the capacitor is connected with the control end of the second thin film transistor, the input end of the fifth thin film transistor and the input end of the sixth thin film transistor; the control end of the sixth thin film transistor is connected with the N-1 th-level scanning signal; the constant-voltage low-potential signal is connected with the output end of the sixth thin film transistor and the input end of the seventh thin film transistor; and the output end of the seventh thin film transistor is connected with the output end of the fourth thin film transistor, the input end of the light-emitting device and the input end of the photosensitive device.
Based on the third implementation manner of the first aspect, in a fourth implementation manner of the first aspect, the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor, the sixth thin film transistor and the seventh thin film transistor are all P-type thin film transistors.
Based on the third implementation manner of the first aspect, in a fifth implementation manner of the first aspect, the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor, the sixth thin film transistor and the seventh thin film transistor are all one of a low-temperature polysilicon thin film transistor, an oxide semiconductor thin film transistor or an amorphous silicon thin film transistor.
In a sixth implementation form of the first aspect, the voltage of the driving signal is higher than the voltage of the second negative power supply signal, and the voltage of the second negative power supply signal is higher than the voltage of the first negative power supply signal.
In a seventh implementation form of the first aspect, the photosensitive device is a photoresistor; the first end of the photoresistor is connected with the output end of the driving circuit and the input end of the light-emitting device; the second terminal of the photodiode is connected to a second negative supply signal.
In a second aspect, the present application provides a Micro L ED display panel, comprising the Micro L ED display cell of any of the above embodiments, the Micro L ED display cell being located within the Micro L ED display panel.
Based on the second aspect, in the first implementation manner of the second aspect, the array of Micro L ED display cells is distributed in a Micro L ED display panel.
The application provides a Micro L ED display element shows through drive signal control light emitting device of drive circuit output, and photosensitive element response light emitting device's luminous intensity when luminous intensity reaches the threshold value, and photosensitive element will switch on by oneself, can the automatically regulated current value of light emitting device that flows through to the homogeneity of balanced demonstration.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a Micro L ED display unit provided in an embodiment of the present application.
FIG. 2 is a schematic circuit diagram of the Micro L ED display cell shown in FIG. 1.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1, the present embodiment provides a Micro L ED display unit, which includes a driving circuit 10, a light emitting device 20 and a light sensing device 30, wherein the driving circuit 10 is used for providing a driving signal, the light emitting device 20 is connected to an output terminal of the driving circuit 10 and a first power negative signal VSS1 and is used for receiving the driving signal to display, and the light sensing device 30 is connected to an output terminal of the driving circuit 10, an input terminal of the light emitting device 20 and a second power negative signal VSS2 and is used for self-conducting according to the light intensity of the light emitting device 20 to adjust the current of the light emitting device 20.
Specifically, the driving signal output by the driving circuit 10 controls the light emitting device 20 to display, the photosensitive device 30 senses the light emitting intensity of the light emitting device 20, when the light emitting intensity reaches a threshold value, the photosensitive device 30 is turned on by itself and shunts the current value flowing through the light emitting device 20, so that the current value flowing through the light emitting device 20 is automatically adjusted, the purpose of adjusting the light emitting intensity of the light emitting device 20 is achieved, and the uniformity of display is improved.
In one embodiment, the photosensitive device 30 is a photodiode; the anode of the photodiode is connected with the output end of the driving circuit 10 and the input end of the light emitting device 20; the cathode of the photodiode is connected with a second negative power supply signal.
In one embodiment, the light emitting device 20 is a micro light emitting diode; the positive electrode of the micro light-emitting diode is connected with the output end of the driving circuit 10 and the input end of the photosensitive device 30; the cathode of the micro light emitting diode is connected with a first power supply negative signal VSS 1.
It should be noted that the present embodiment may be, but is not limited to, a micro light emitting diode, or other light emitting devices 20, and may also serve the purpose of adjusting the light emitting intensity.
As shown in fig. 2, in one embodiment, the driving circuit 10 includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, a sixth thin film transistor T6, a seventh thin film transistor T7, and a capacitor C1; the power positive signal VDD is connected to an input terminal of the first thin film transistor T1 and a first terminal of the capacitor C1; an output terminal of the first thin film transistor T1 is connected to an input terminal of the second thin film transistor T2 and an output terminal of the third thin film transistor T3; an input terminal of the third thin film transistor T3 is connected to the DATA signal DATA; an output terminal of the second thin film transistor T2 is connected to an input terminal of the fourth thin film transistor T4 and an output terminal of the fifth thin film transistor T5; the nth scan signal scan (N) is connected to the control terminal of the third tft T3, the control terminal of the fifth tft T5, and the control terminal of the seventh tft T7; the nth-stage emission control signal em (N) is connected to the control terminals of the first and fourth thin film transistors T1 and T4; a second terminal of the capacitor C1 is connected to the control terminal of the second thin film transistor T2, the input terminal of the fifth thin film transistor T5, and the input terminal of the sixth thin film transistor T6; a control terminal of the sixth thin film transistor T6 is connected to the N-1 th SCAN signal SCAN (N-1); the constant voltage low potential signal VI is connected to the output terminal of the sixth thin film transistor T6 and the input terminal of the seventh thin film transistor T7; an output terminal of the seventh thin film transistor T7 is connected to an output terminal of the fourth thin film transistor T4, an input terminal of the light emitting device 20, and an input terminal of the light sensing device 30.
Specifically, the N-1 th SCAN signal SCAN (N-1) is a low signal, the sixth TFT T6 is turned on to pull down the second terminal voltage of the capacitor C1, and the capacitor C1 starts to charge. Next, the nth scan signal scan (N) is a low level signal, the third tft T3, the fifth tft T5, and the seventh tft T7 are all turned on, the gate and the drain of the second tft T2 are shorted, the absolute value of the gate voltage of the second tft T2 is greater than the absolute value of the threshold voltage thereof, at this time, the second tft T2 is equivalent to a diode, the second tft T2 is turned on, and the second tft T2 is turned off until the gate voltage of the second tft T2 is equal to the difference between the voltage of the DATA signal DATA and the absolute value of the threshold voltage thereof; meanwhile, the turning on of the seventh thin film transistor T7 resets the voltage of the driving signal. Finally, the light emission control signal is a low level signal, and the first thin film transistor T1 and the fourth thin film transistor T4 are turned on, and at this time, the driving signal is output.
It should be noted that the driving circuit 10 provided in this embodiment may be, but is not limited to, the circuit topology, and may also be a driving circuit 10 with another circuit topology.
In one embodiment, the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3, the fourth thin film transistor T4, the fifth thin film transistor T5, the sixth thin film transistor T6, and the seventh thin film transistor T7 are P-type thin film transistors.
In one embodiment, the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3, the fourth thin film transistor T4, the fifth thin film transistor T5, the sixth thin film transistor T6, and the seventh thin film transistor T7 are each one of a low temperature polysilicon thin film transistor, an oxide semiconductor thin film transistor, or an amorphous silicon thin film transistor.
In one embodiment, the voltage of the driving signal is higher than the voltage of the second power negative signal VSS2, and the voltage of the second power negative signal VSS2 is higher than the voltage of the first power negative signal VSS 1.
Specifically, adjusting the voltage of the second power negative signal VSS2 may improve the voltage of the driving signal, which may be compensated to balance the uniformity of light emission of the display.
In one embodiment, photosensitive device 30 is a photoresistor; a first end of the photoresistor is connected with the output end of the driving circuit 10 and the input end of the light-emitting device 20; the second terminal of the photodiode is connected to a second negative supply signal.
In one embodiment, the present application provides a Micro L ED display panel including the Micro L ED display cell of any of the above embodiments, the Micro L ED display cell being located within the Micro L ED display panel.
In one embodiment, an array of Micro L ED display cells is distributed within a Micro L ED display panel.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The Micro L ED display unit provided in the embodiments of the present application is described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the above description of the embodiments is only used to help understand the technical solutions and the core ideas of the present application, and it should be understood by those skilled in the art that the embodiments described in the foregoing embodiments may be modified or some technical features may be equivalently replaced, and the modifications or the replacements do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A Micro L ED display cell, comprising:
a drive circuit for providing a drive signal;
the light-emitting device is connected with the output end of the driving circuit and a first power supply negative signal and is used for accessing the driving signal to display; and
and the photosensitive device is connected with the output end of the driving circuit, the input end of the light-emitting device and a second power supply negative signal and is used for automatically conducting according to the light-emitting intensity of the light-emitting device so as to adjust the current of the light-emitting device.
2. The Micro L ED display cell of claim 1, wherein the photosensitive device is a photodiode;
the anode of the photodiode is connected with the output end of the driving circuit and the input end of the light-emitting device; and the cathode of the photodiode is connected with the second negative power supply signal.
3. The Micro L ED display cell of claim 1, wherein the light emitting device is a Micro light emitting diode;
the anode of the micro light-emitting diode is connected with the output end of the driving circuit and the input end of the photosensitive device; and the cathode of the micro light-emitting diode is connected with the first power supply negative signal.
4. The Micro L ED display cell of claim 1, wherein the driving circuit includes a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a seventh thin film transistor, and a capacitor;
a power positive signal is connected with the input end of the first thin film transistor and the first end of the capacitor; the output end of the first thin film transistor is connected with the input end of the second thin film transistor and the output end of the third thin film transistor; the input end of the third thin film transistor is connected with a data signal; the output end of the second thin film transistor is connected with the input end of the fourth thin film transistor and the output end of the fifth thin film transistor; the Nth-stage scanning signal is connected with the control end of the third thin film transistor, the control end of the fifth thin film transistor and the control end of the seventh thin film transistor; the Nth-stage light-emitting control signal is connected with the control end of the first thin film transistor and the control end of the fourth thin film transistor; a second end of the capacitor is connected with a control end of the second thin film transistor, an input end of the fifth thin film transistor and an input end of the sixth thin film transistor; the control end of the sixth thin film transistor is connected with the N-1 th-level scanning signal; a constant-voltage low-potential signal is connected with the output end of the sixth thin film transistor and the input end of the seventh thin film transistor; and the output end of the seventh thin film transistor is connected with the output end of the fourth thin film transistor, the input end of the light-emitting device and the input end of the photosensitive device.
5. The Micro L ED display cell of claim 4, wherein the first, second, third, fourth, fifth, sixth, and seventh thin film transistors are P-type thin film transistors.
6. The Micro L ED display cell of claim 4, wherein the first, second, third, fourth, fifth, sixth, and seventh thin film transistors are each one of low temperature polysilicon, oxide semiconductor, or amorphous silicon thin film transistors.
7. The Micro L ED display unit of claim 1, wherein the driving signal has a voltage higher than the second negative supply signal, which has a voltage higher than the first negative supply signal.
8. The Micro L ED display cell of claim 1, wherein the photosensitive device is a photoresistor;
the first end of the photoresistor is connected with the output end of the driving circuit and the input end of the light-emitting device; a second terminal of the photodiode is connected to the second negative supply signal.
9. A Micro L ED display panel, comprising the Micro L ED display cell of any one of claims 1 to 8, the Micro L ED display cell being located within the Micro L ED display panel.
10. The Micro L ED display panel of claim 9, wherein the array of Micro L ED display cells is distributed within the Micro L ED display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010420930.8A CN111462684A (en) | 2020-05-18 | 2020-05-18 | Micro L ED display unit and Micro L ED display panel thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010420930.8A CN111462684A (en) | 2020-05-18 | 2020-05-18 | Micro L ED display unit and Micro L ED display panel thereof |
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| CN111462684A true CN111462684A (en) | 2020-07-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11514852B2 (en) | 2021-04-20 | 2022-11-29 | Au Optronics Corporation | Pixel array |
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Application publication date: 20200728 |