CN111446187B - Laser annealing equipment - Google Patents
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- CN111446187B CN111446187B CN202010278970.3A CN202010278970A CN111446187B CN 111446187 B CN111446187 B CN 111446187B CN 202010278970 A CN202010278970 A CN 202010278970A CN 111446187 B CN111446187 B CN 111446187B
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- 238000005224 laser annealing Methods 0.000 title claims abstract description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 156
- 238000000137 annealing Methods 0.000 claims abstract description 98
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 73
- 238000009792 diffusion process Methods 0.000 claims abstract description 61
- 239000007789 gas Substances 0.000 claims abstract description 58
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 39
- 229910052760 oxygen Inorganic materials 0.000 claims description 39
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 10
- 238000002425 crystallisation Methods 0.000 abstract description 12
- 230000008025 crystallization Effects 0.000 abstract description 12
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 12
- 238000001953 recrystallisation Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229920001621 AMOLED Polymers 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 208000005632 oculopharyngodistal myopathy Diseases 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Toxicology (AREA)
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- Recrystallisation Techniques (AREA)
Abstract
The invention discloses a laser annealing device, comprising: a deoxidizing chamber, an excimer laser generator positioned above the deoxidizing chamber, and an annealing chamber positioned below the deoxidizing chamber; the annealing chamber comprises a bearing table for bearing a substrate with an amorphous silicon film; the deoxidizing chamber includes: the bottom cover plate, the annealing window and the nitrogen conveying pipe; the bottom cover plate includes: a laser exit slit and a plurality of gas diffusion holes distributed around the laser exit slit; the nitrogen provided by the nitrogen conveying pipe fills the deoxidization chamber and is diffused to the bearing table through the laser emergent slit and each gas diffusion hole; laser emitted by the excimer laser generator is emitted to the bearing table through the annealing window and the laser emergent slit in sequence. By additionally arranging a plurality of gas diffusion holes around the laser emergent slit, the nitrogen atmosphere which is purged to the surface of the bearing table by the laser emergent slit and each gas diffusion hole is more uniform, the molten recrystallization region is ensured to be in a pure nitrogen environment, the crystallization quality is improved, and the product yield is further improved.
Description
Technical Field
The invention relates to the technical field of display preparation, in particular to laser annealing equipment.
Background
In flat panel display devices, active matrix organic light emitting diodes (Active Matrix Organic Light Emitting Diode, AMOLED for short) are the best choice for future display technologies due to the advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle, ultra-light and ultra-thin display. In the current AMOLED, the fabrication of the polysilicon layer in the back plate technology includes various fabrication methods such as excimer laser annealing (Excimer Laser Annealing, ELA for short), solid phase crystallization or metal induced crystallization. The polysilicon film of the transistor active layer in the backboard is the only method for realizing mass production by adopting the excimer laser annealing process.
The excimer laser annealing process is a relatively complex annealing process. The ELA apparatus is an apparatus for irradiating an amorphous silicon film on a substrate with an excimer laser beam for a short time to recrystallize the amorphous silicon film into a polysilicon film. In the related art, a deoxidizing chamber (Partial Sealing BOX or Oxygen Partial Degassing Module [ OPDM)]) Nitrogen (N) 2 ) The method comprises the steps of blowing N to the surface of a bearing table (Stage) for bearing an amorphous silicon (a-Si) film in an annealing Chamber (Chamber) through a laser emission Slit (Slit) 2 To reduce oxygen (O) 2 ) The concentration affects the quality of amorphous silicon crystals in the region of molten recrystallization. However, this approach tends to cause unstable nitrogen atmosphere at the laser exit slit, which is manifested by poor nitrogen flow turbulence (N) due to high local oxygen concentration 2 Turbo Mura) phenomenon, so that an area with higher oxygen concentration after amorphous silicon is converted into polysilicon (p-Si) is expressed as abnormal crystallization, and polysilicon film Roughness (roughess) is larger, thus the short circuit (short) between a rear-end Gate (Gate) layer and a channel film layer formed by polysilicon is extremely easy to occur, the electrical property of a transistor (TFT) is seriously influenced, and finally the whole-surface dirt phenomenon occurs after the rear-End (ET) is lighted, and the product yield is influenced.
Disclosure of Invention
In view of the above, the embodiment of the invention provides a laser annealing device for improving crystallization quality and increasing product yield.
Accordingly, a laser annealing apparatus provided in an embodiment of the present invention includes: a deoxidizing chamber, an excimer laser generator positioned above the deoxidizing chamber, and an annealing chamber positioned below the deoxidizing chamber, wherein,
the annealing chamber includes: a carrying table for carrying a substrate having an amorphous silicon film;
the deoxidizing chamber includes: the bottom cover plate, the annealing window and the nitrogen conveying pipe;
the bottom cover plate includes: a laser exit slit, and a plurality of gas diffusion holes distributed around the laser exit slit;
the nitrogen gas provided by the nitrogen gas conveying pipe fills the deoxidizing chamber and is diffused to the bearing table through the laser emergent slit and each gas diffusion hole;
and laser emitted by the excimer laser generator is emitted to the bearing table through the annealing window and the laser emergent slit in sequence.
In a possible implementation manner, in the above laser annealing apparatus provided by the embodiment of the present invention, in an extending direction of the laser emission slit, the gas diffusion holes are arranged in a plurality of rows, and a row spacing between the gas diffusion holes in each row increases with an increase in a distance from the laser emission slit.
In a possible implementation manner, in the laser annealing apparatus provided in the embodiment of the present invention, each of the gas diffusion holes in adjacent rows are staggered with respect to each other.
In a possible implementation manner, in the above laser annealing apparatus provided by the embodiment of the present invention, the distances between adjacent gas diffusion holes in each row are the same.
In a possible implementation manner, in the above laser annealing apparatus provided by the embodiment of the present invention, the distance between the gas diffusion holes at two ends in each row and the center of the end face of the laser exit slit is the same.
In a possible implementation manner, in the laser annealing device provided by the embodiment of the invention, the gas diffusion hole is a tapered hole, and the wide angle of the tapered hole is 60 ° to 120 °.
In a possible implementation manner, in the laser annealing apparatus provided by the embodiment of the present invention, the deoxidizing chamber further includes: the first oxygen detectors are respectively arranged at the boundary of the area where the gas diffusion holes are located at the two ends of the extending direction of the laser emergent slit, and at the intersection of the three perpendicular lines at the two ends and the center of the laser emergent slit and the boundary of the bottom cover plate.
In a possible implementation manner, in the above laser annealing apparatus provided by the embodiment of the present invention, the annealing chamber further includes: a plurality of first nitrogen diffusers located below the carrier table, and a plurality of second nitrogen diffusers located below a plane in which each of the first nitrogen diffusers is located;
orthographic projections of the second nitrogen diffusers on the bottom surface of the annealing chamber are respectively positioned at two ends and the center of the vertical side of the bottom surface of the annealing chamber, which is opposite to the plane of the annealing chamber;
orthographic projections of the first nitrogen diffusers on the bottom surface of the annealing chamber are respectively positioned at the centers of orthographic projection connecting lines of the adjacent second nitrogen diffusers on the bottom surface of the annealing chamber;
the distance between the plane of each first nitrogen diffuser and the bottom surface of the annealing chamber is twice the distance between the plane of each second nitrogen diffuser and the bottom surface of the annealing chamber.
In a possible implementation manner, in the above laser annealing apparatus provided by the embodiment of the present invention, the annealing chamber further includes: a plurality of second oxygen detectors;
wherein the orthographic projections of part of the second oxygen detectors on the bottom surface of the annealing chamber are respectively positioned at two ends of the bottom surface of the annealing chamber at the edge intersecting with the plane of the annealing chamber door;
the other parts of the second oxygen detectors are orthographic projected on the bottom surface of the annealing chamber and are respectively positioned at two ends of the intersecting edge of the side surface of the bottom surface of the annealing chamber opposite to the door of the annealing chamber;
the plane of the plurality of second oxygen detectors is an interface between each of the first nitrogen diffusers and each of the second nitrogen diffusers.
In a possible implementation manner, in the above laser annealing apparatus provided by the embodiment of the present invention, the annealing chamber further includes: and a plurality of exhaust ports positioned on the bottom surface of the annealing chamber, the plurality of exhaust ports being respectively positioned at the centers of a plurality of boundaries of the bottom surface of the annealing chamber.
The invention has the following beneficial effects:
the laser annealing equipment provided by the embodiment of the invention comprises: a deoxidizing chamber, an excimer laser generator located above the deoxidizing chamber, and an annealing chamber located below the deoxidizing chamber, wherein the annealing chamber comprises: the bearing table is used for bearing the substrate with the amorphous silicon film; a deoxidizing chamber, comprising: the bottom cover plate, the annealing window and the nitrogen conveying pipe; a bottom cover plate comprising: a laser exit slit, and a plurality of gas diffusion holes distributed around the laser exit slit; the nitrogen gas provided by the nitrogen gas conveying pipe fills the deoxidization chamber and is diffused to the bearing table through the laser emergent slit and each gas diffusion hole; laser emitted by the excimer laser generator is sequentially emitted to the bearing table through the annealing window and the laser emergent slit. By additionally arranging a plurality of gas diffusion holes around the laser emergent slit, the nitrogen atmosphere which is purged to the surface of the bearing table by the laser emergent slit and each gas diffusion hole is more uniform, so that the molten recrystallization region on the amorphous silicon film irradiated by the laser at the laser emergent slit is ensured to be in a pure nitrogen environment, no oxygen interference exists, the crystallization quality is improved, and the product yield is further improved.
Drawings
Fig. 1 is a schematic structural diagram of a laser annealing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a bottom cover plate of a deoxidizing chamber according to an embodiment of the present invention;
FIG. 3 is a diagram showing a simulation of the effect of nitrogen atmosphere on a molten recrystallization zone according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an annealing chamber according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without creative efforts, based on the described embodiments of the present invention fall within the protection scope of the present invention.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms first, second and the like in the description and in the claims, are not used for any order, quantity or importance, but are used for distinguishing between different elements. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. "inner", "outer", "upper", "lower", etc. are used merely to denote relative positional relationships, which may also change accordingly when the absolute position of the object to be described changes.
It should be noted that the dimensions and shapes of the figures in the drawings do not reflect true proportions, and are intended to illustrate the present invention only. And the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.
The laser annealing device provided by the embodiment of the invention, as shown in fig. 1 and 2, comprises: a deoxidizing chamber 001, an excimer laser generator (not shown) above the deoxidizing chamber 001, and an annealing chamber 002 below the deoxidizing chamber 001, wherein,
an annealing chamber 002 comprising: a susceptor 201, the susceptor 201 being for carrying a substrate having an amorphous silicon film;
a deoxidizing chamber 001, comprising: a bottom cover plate 101, an annealing window 102, and a nitrogen gas delivery pipe (not shown in the figure);
bottom cover plate 101, comprising: a laser light emission slit 1011, and a plurality of gas diffusion holes 1012 distributed around the laser light emission slit 1011;
nitrogen supplied from the nitrogen supply pipe fills the deoxidizing chamber 001 and diffuses to the susceptor 201 through the laser light emitting slits 1011 and the gas diffusion holes 1012;
laser light emitted from the excimer laser generator (shown by the diagonal arrow) is sequentially emitted to the susceptor 201 through the annealing window 102 and the laser light emission slit 1011.
In the above-mentioned laser annealing device provided by the embodiment of the invention, the plurality of gas diffusion holes 1012 are additionally arranged around the laser emission slit 1011, so that the nitrogen atmosphere purged to the surface of the bearing table 201 by the laser emission slit 1011 and each gas diffusion hole 1012 is more uniform, therefore, the molten recrystallization region on the amorphous silicon film irradiated by the laser at the laser emission slit 1011 is ensured to be in a pure nitrogen environment, and no oxygen (derived from air) interference exists, as shown in fig. 3, thereby improving the crystallization quality and further improving the product yield.
Alternatively, in the above-described laser annealing apparatus provided by the embodiment of the present invention, as shown in fig. 2, in the extending direction X of the laser emission slit 1011, the gas diffusion holes 1012 are arranged in a plurality of rows, and the row spacing between the gas diffusion holes 1012 in each row increases with the distance from the laser emission slit 1011. Specifically, in fig. 2, it is exemplarily given that a distance between the first row of gas diffusion holes 1012 and the second row of gas diffusion holes 1012 on the side of the laser light exit slit 1011 is a, a distance between the second row of gas diffusion holes 1012 and the third row of gas diffusion holes 1012 is b, and a distance between the third row of gas diffusion holes 1012 and the fourth row of gas diffusion holes 1012 is c, where a < b < c.
Since the region of the laser emission slit 1011 corresponding to the amorphous silicon film is a melt recrystallization region, the nitrogen diffusion in the peripheral edge region of the laser emission slit 1011 has a large influence on the quality of melt recrystallization, and by providing the row spacing between the rows of gas diffusion holes 1012 to increase with the distance from the laser emission slit 1011, the gas diffusion holes 1012 in the peripheral edge region of the laser emission slit 1011 are denser and the gas diffusion holes 1012 in the region farther from the laser emission slit 1011 are slightly less dense. The densely arranged gas diffusion holes 1012 ensure that the nitrogen purged to the molten recrystallization region is sufficient and is in an oxygen-free state, and the sparsely arranged gas diffusion holes 1012 can further discharge oxygen displaced by the nitrogen in the molten recrystallization region, so that the stability of the nitrogen atmosphere in the peripheral region of the molten recrystallization region is maintained. Thus, no matter whether scanning (1500/1850) is carried out along that direction or the laser cut-off device (Beam cutter) is positioned at that setting position, the nitrogen content uniform area is always larger than the scanning area, and defects such as nitrogen disorder and the like caused by high oxygen content around the laser cut-off device are avoided, so that oxygen with extremely low content in the annealing chamber 002 is far away from the amorphous silicon melting crystallization position, and various ET lighting defects caused by unstable atmosphere are solved.
Alternatively, in the above-mentioned laser annealing apparatus provided by the embodiment of the present invention, in order to enhance the uniformity of the nitrogen atmosphere, the gas diffusion holes 1012 of the adjacent rows may be disposed to be offset from each other, as shown in fig. 2.
Optionally, in the above-mentioned laser annealing apparatus provided by the embodiment of the present invention, the distances between adjacent gas diffusion holes 1012 in each row are the same, so as to further enhance the uniformity of the nitrogen atmosphere.
Alternatively, in the above-described laser annealing apparatus provided by the embodiment of the present invention, as shown in fig. 2, the distance between the gas diffusion holes 1012 at both ends in each row and the center of the end face of the laser emission slit 1011 is the same. It can be understood that the boundary of the gas diffusion holes 1012 is an arc (i.e. a virtual arc in the drawing) with the center of the end face of the laser exit slit 1011 as the center, and the distance between the center of the end face of the laser exit slit 1011 and the farther boundary of the bottom cover plate 101 in the laser scanning direction Y is a radius, so as to ensure that each row of gas diffusion holes 1012 on the bottom cover plate 201 are within the uniform boundary. In addition, by providing the gas diffusion holes 1012 only in the boundary range, pressure balance of the nitrogen atmosphere is achieved.
Optionally, in the above laser annealing apparatus provided by the embodiment of the present invention, the gas diffusion hole 1012 is a tapered hole, and the wide angle of the tapered hole is 60 ° to 120 °, for example, 60 °, 70 °, 80 °, 90 °, 100 °, 110 ° and 120 °, so that the nitrogen atmosphere diffused to the surface of the amorphous silicon film is relatively uniform.
Optionally, in the foregoing laser annealing apparatus provided by the embodiment of the present invention, as shown in fig. 2, the deoxidizing chamber 001 further includes: the first oxygen detectors 1013 are disposed at the boundaries of the regions where the gas diffusion holes 1012 are located at both ends of the laser emission slit 1011 in the extending direction, and at the intersections of the boundaries of the bottom cover plate 101 with the three perpendicular lines at both ends and the center of the laser emission slit 1011, respectively.
As shown in fig. 2, since the oxygen environments on both sides of the extending direction of the laser exit slit 1011 are similar, the first oxygen detector 1013 may be disposed only at the intersection of one side of the extending direction of the laser exit slit 1011 (i.e., the intersection of the three perpendicular lines of the two ends and the center of the laser exit slit 1011 and one boundary of the bottom cover plate 101); the oxygen environments at the two ends of the laser exit slit 1011 are very different, so the first oxygen detectors 1013 are required to be disposed at the two ends of the laser exit slit 1011 to reasonably and effectively monitor the oxygen concentration.
Optionally, in the foregoing laser annealing apparatus provided by the embodiment of the present invention, as shown in fig. 4, the annealing chamber 002 further includes: a plurality of first nitrogen diffusers (N 2 Differ) 202, and a plurality of second nitrogen diffusers 203 located below the plane of each first nitrogen Diffuser 202; specifically, fig. 4 shows six first nitrogen diffusers 202 and six second nitrogen diffusers 203;
a plurality of second nitrogen diffusers 203 are respectively arranged at two ends and the center of the vertical side of the plane where the bottom surface of the annealing chamber 002 is located and the gate door (shown as a black thick line in the figure) of the annealing chamber 002;
orthographic projections of the first nitrogen diffusers 202 on the bottom surface of the annealing chamber 002 are respectively positioned at the centers of orthographic projection connecting lines of the adjacent second nitrogen diffusers 203 on the bottom surface of the annealing chamber 002;
the distance B between the plane of each first nitrogen diffuser 202 and the bottom surface of the annealing chamber 002 is twice the distance a between the plane of each second nitrogen diffuser 203 and the bottom surface of the annealing chamber 002.
The first nitrogen diffuser 202 and the second nitrogen diffuser 203 are uniformly distributed in the annealing chamber 002, so that the stability of the nitrogen ambient pressure and atmosphere in the annealing chamber 002 can be effectively maintained, and the stable annealing process is ensured. And is as followsEnsuring that the nitrogen content in the annealing chamber 002 is as uniform as possible and the internal pressure is kept the same at all positions, specifically, the distance B between the plane of each first nitrogen diffuser 202 and the bottom surface of the annealing chamber 002 is twice the distance A between the plane of each second nitrogen diffuser 203 and the bottom surface of the annealing chamber 002, so that the space below the bearing table 201 is divided into upper and lower parts with equal volumes, and when the annealing process is performed, the first nitrogen diffusers 202 diffuse at the same nitrogen rate (N 2 flow rate) while uniformly diffusing nitrogen to the equal volume upper portion, the second nitrogen diffuser 203 similarly ensures the same nitrogen diffusion rate in the lower portion. In addition, the nitrogen flow rates of the upper part and the lower part can be independently adjusted in the implementation.
It should be noted that the dimensions in fig. 4 are not true to scale, and are intended to illustrate the present invention only. The space height above the bearing table 201 (i.e. the difference between C and B) in the actual product is about 5mm, and the height C of the entire annealing chamber 002 can reach several meters, so that the space below the bearing table 201 is divided into upper and lower parts with equal volumes by the first nitrogen diffuser 202 and the second nitrogen diffuser 203, so that the nitrogen content at each position in the upper and lower parts is ensured to be as consistent as possible, which is equivalent to maintaining the stability of the nitrogen atmosphere of the entire annealing chamber 002.
Optionally, in the foregoing laser annealing apparatus provided by the embodiment of the present invention, as shown in fig. 4, the annealing chamber 002 further includes: a plurality of second oxygen detectors 204; specifically, fig. 4 shows four second oxygen detectors 204;
wherein, the orthographic projections of part of the second oxygen detectors 204 on the bottom surface of the annealing chamber 002 are respectively positioned at two ends of the bottom surface of the annealing chamber 002 which are intersected with the plane of the door of the annealing chamber 002;
the other parts of the second oxygen detectors 204 are respectively positioned at two ends of the intersecting sides of the bottom surface of the annealing chamber 002 opposite to the door of the annealing chamber 002;
the plane of the plurality of second oxygen detectors 204 is the interface between each of the first nitrogen diffusers 202 and each of the second nitrogen diffusers 203 (as shown by the dashed boxes).
The arrangement of the plurality of second oxygen detectors 204 can perform block rationalization monitoring on the oxygen concentration in the annealing chamber 002. Considering that the atmosphere surrounding degree in the annealing chamber 002 is maximum when the substrate with the amorphous silicon film is replaced (Exchange load) and unloaded (unloading), the sensitivity to atmosphere sensing is improved by adopting a block supervision and control adjustment mode, and the rapid recovery of atmosphere stability can be realized. For example, during the door opening operation of the door side of the annealing chamber 002, the nitrogen flow (N) in this region needs to be increased in order to keep the flow stable and avoid excessive oxygen entering the annealing chamber 002 2 Purge) amount; also, to ensure that the oxygen concentration in the annealing chamber 002 quickly returns to the process steady state after closing the door, the zone module automatically executes the command to increase the nitrogen flow. Specifically, the process of automatically executing the command for increasing the flow rate of nitrogen is the prior art, and will not be described herein.
Optionally, in the foregoing laser annealing apparatus provided by the embodiment of the present invention, as shown in fig. 4, the annealing chamber 002 further includes: a plurality of exhaust ports 205 located on the bottom surface of the annealing chamber 002, the plurality of exhaust ports 205 being located at the centers of a plurality of boundaries of the bottom surface of the annealing chamber 002, respectively.
In the related art, only one nitrogen diffuser is respectively arranged at four corners of the annealing chamber 002, but at least 12 nitrogen diffusers are arranged in layers in the embodiment of the invention, and in order to accelerate the exhaust process and maintain the air pressure balance in the exhaust process, the center positions of a plurality of boundaries of the bottom surface of the annealing chamber 002 are respectively and correspondingly provided with an exhaust port.
As can be seen from the above description, in the above embodiments provided by the present invention, the innovative design of the laser annealing apparatus is mainly performed from the following two aspects, and the stability of the annealing process atmosphere can be effectively improved. First, a bottom cover plate 101 (also referred to as a nitrogen diffuser plate, N 2 diffusion Plate) to design a plurality of gas diffusion holes 1012, so that oxygen is promoted to be far away from the laser emergent crystallization position, and the interference of oxygen on amorphous silicon crystallization can be effectively avoided; next, a more optimal design is performed in the annealing chamber 002 to provide a nitrogen gas flow layer (N 2 Flow) error diffusion mode, and controlling the oxygen concentration in a layered manner so as to achieve the effect of gas atmosphere stability and optimizeThe oxygen concentration monitoring mode adopts a blocking supervision control adjustment mode to improve the sensitivity to atmosphere perception, and can realize the rapid recovery of atmosphere stability. By the method, the amorphous silicon has a good crystallization effect, the transistor has better electrical characteristics, and the product yield is improved.
The laser annealing device provided by the embodiment of the invention comprises: a deoxidizing chamber, an excimer laser generator located above the deoxidizing chamber, and an annealing chamber located below the deoxidizing chamber, wherein the annealing chamber comprises: the bearing table is used for bearing the substrate with the amorphous silicon film; a deoxidizing chamber, comprising: the bottom cover plate, the annealing window and the nitrogen conveying pipe; a bottom cover plate comprising: a laser exit slit, and a plurality of gas diffusion holes distributed around the laser exit slit; the nitrogen gas provided by the nitrogen gas conveying pipe fills the deoxidization chamber and is diffused to the bearing table through the laser emergent slit and each gas diffusion hole; laser emitted by the excimer laser generator is sequentially emitted to the bearing table through the annealing window and the laser emergent slit. By additionally arranging a plurality of gas diffusion holes around the laser emergent slit, the nitrogen atmosphere which is purged to the surface of the bearing table by the laser emergent slit and each gas diffusion hole is more uniform, so that the molten recrystallization region on the amorphous silicon film irradiated by the laser at the laser emergent slit is ensured to be in a pure nitrogen environment, no oxygen interference exists, the crystallization quality is improved, and the product yield is further improved.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. A laser annealing apparatus, comprising: a deoxidizing chamber, an excimer laser generator positioned above the deoxidizing chamber, and an annealing chamber positioned below the deoxidizing chamber, wherein,
the annealing chamber includes: a carrying table for carrying a substrate having an amorphous silicon film;
the deoxidizing chamber includes: the bottom cover plate, the annealing window and the nitrogen conveying pipe;
the bottom cover plate includes: a laser emission slit, and a plurality of gas diffusion holes distributed around the laser emission slit, wherein in the extending direction of the laser emission slit, the gas diffusion holes are arranged in a plurality of rows, and the row spacing between the gas diffusion holes in each row increases with the distance between the gas diffusion holes and the laser emission slit;
the nitrogen gas provided by the nitrogen gas conveying pipe fills the deoxidizing chamber and is diffused to the bearing table through the laser emergent slit and each gas diffusion hole;
and laser emitted by the excimer laser generator is emitted to the bearing table through the annealing window and the laser emergent slit in sequence.
2. The laser annealing apparatus according to claim 1, wherein each of said gas diffusion holes of adjacent rows are offset from each other.
3. The laser annealing apparatus according to claim 1, wherein distances between adjacent ones of the gas diffusion holes in each row are the same.
4. The laser annealing apparatus according to claim 1, wherein a distance between the gas diffusion holes at both ends in each row and a center of the laser exit slit end face is the same.
5. The laser annealing apparatus according to claim 1, wherein the gas diffusion hole is a tapered hole having a wide angle of 60 ° to 120 °.
6. The laser annealing apparatus according to any one of claims 1 to 5, wherein said deoxidizing chamber further comprises: the first oxygen detectors are respectively arranged at the boundary of the area where the gas diffusion holes are located at the two ends of the extending direction of the laser emergent slit, and at the intersection of the three perpendicular lines at the two ends and the center of the laser emergent slit and the boundary of the bottom cover plate.
7. The laser annealing apparatus according to any one of claims 1 to 5, wherein said annealing chamber further comprises: a plurality of first nitrogen diffusers located below the carrier table, and a plurality of second nitrogen diffusers located below a plane in which each of the first nitrogen diffusers is located;
orthographic projections of the second nitrogen diffusers on the bottom surface of the annealing chamber are respectively positioned at two ends and the center of the vertical side of the bottom surface of the annealing chamber, which is opposite to the plane of the annealing chamber;
orthographic projections of the first nitrogen diffusers on the bottom surface of the annealing chamber are respectively positioned at the centers of orthographic projection connecting lines of the adjacent second nitrogen diffusers on the bottom surface of the annealing chamber;
the distance between the plane of each first nitrogen diffuser and the bottom surface of the annealing chamber is twice the distance between the plane of each second nitrogen diffuser and the bottom surface of the annealing chamber.
8. The laser annealing apparatus according to claim 7, wherein said annealing chamber further comprises: a plurality of second oxygen detectors;
wherein the orthographic projections of part of the second oxygen detectors on the bottom surface of the annealing chamber are respectively positioned at two ends of the bottom surface of the annealing chamber at the edge intersecting with the plane of the annealing chamber door;
the other parts of the second oxygen detectors are orthographic projected on the bottom surface of the annealing chamber and are respectively positioned at two ends of the intersecting edge of the side surface of the bottom surface of the annealing chamber opposite to the door of the annealing chamber;
the plane of the plurality of second oxygen detectors is an interface between each of the first nitrogen diffusers and each of the second nitrogen diffusers.
9. The laser annealing apparatus according to claim 7, wherein said annealing chamber further comprises: and a plurality of exhaust ports positioned on the bottom surface of the annealing chamber, the plurality of exhaust ports being respectively positioned at the centers of a plurality of boundaries of the bottom surface of the annealing chamber.
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| JP2000349041A (en) * | 1995-10-05 | 2000-12-15 | Japan Steel Works Ltd:The | Laser annealing apparatus |
| JP2014022605A (en) * | 2012-07-19 | 2014-02-03 | Phoeton Corp | Laser anneal device |
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| CN207818525U (en) * | 2018-03-12 | 2018-09-04 | 昆山国显光电有限公司 | A kind of quasi-molecule laser annealing chamber |
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| TW569351B (en) * | 2002-11-22 | 2004-01-01 | Au Optronics Corp | Excimer laser anneal apparatus and the application of the same |
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| JP2000349041A (en) * | 1995-10-05 | 2000-12-15 | Japan Steel Works Ltd:The | Laser annealing apparatus |
| JP2014022605A (en) * | 2012-07-19 | 2014-02-03 | Phoeton Corp | Laser anneal device |
| CN203900744U (en) * | 2014-06-20 | 2014-10-29 | 上海和辉光电有限公司 | Laser annealing equipment |
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