CN111435780A - Light emitting element - Google Patents
Light emitting element Download PDFInfo
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- CN111435780A CN111435780A CN202010021290.3A CN202010021290A CN111435780A CN 111435780 A CN111435780 A CN 111435780A CN 202010021290 A CN202010021290 A CN 202010021290A CN 111435780 A CN111435780 A CN 111435780A
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- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000002834 transmittance Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000012544 monitoring process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- -1 inp Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Abstract
The invention discloses a light-emitting element, which comprises a substrate, a light-emitting unit and a light detection unit. The substrate comprises a front surface and a back surface which are opposite. The light emitting unit is provided on the front surface side. The light-emitting unit comprises a first surface and a second surface which are opposite, wherein the area of a back light-transmitting area of the second surface is smaller than the total area of at least one positive light-emitting area of the first surface, and the second surface faces the positive surface. The light detection unit is adjacent to the light emitting unit and disposed between the front surface and the second surface. A light receiving area of the light detection unit is used for receiving light from the back light-transmitting area.
Description
Technical Field
The present invention relates to a light emitting device, and more particularly, to a light emitting device incorporating a photodetection unit.
Background
The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art.
In the laser module, a light emitting element, such as Vertical Cavity surface emitting laser (VCSE L), and a corresponding optical element are assembled to serve as a laser light source, and during use, if the luminance of the light emitting element is degraded, the performance and application effect of the laser module may be affected.
Disclosure of Invention
In view of the above, some embodiments of the present invention provide a light emitting device.
The light-emitting device of an embodiment of the invention includes a substrate, a light-emitting unit and a light-detecting unit. The substrate comprises a front surface and a back surface which are opposite. The light emitting unit is provided on the front surface side. The light-emitting unit comprises a first surface and a second surface which are opposite, wherein the area of a back light-transmitting area of the second surface is smaller than the total area of at least one positive light-emitting area of the first surface, and the second surface faces the positive surface. The light detection unit is adjacent to the light emitting unit and disposed between the front surface and the second surface. A light receiving area of the light detection unit is used for receiving light from the back light-transmitting area.
In another embodiment of the present invention, a light emitting device includes a first substrate, a light emitting unit, and a light detecting unit. The first substrate comprises a front surface, a back surface and a light-transmitting area extending from the front surface to the back surface. The light emitting unit is provided on the front surface side. The light-emitting unit comprises a first surface and a second surface which are opposite, wherein the area of a back light-transmitting area of the second surface is smaller than the total area of at least one positive light-emitting area of the first surface, and the second surface faces the positive surface. The light detection unit is provided on the back surface side. A light receiving area of the light detection unit is used for receiving light from the back light-transmitting area through the light-transmitting area.
The purpose, technical content, features and effects of the present invention will be more readily understood by the following detailed description of the specific embodiments in conjunction with the accompanying drawings.
Drawings
Fig. 1 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 2A is a schematic view of a light emitting device according to an embodiment of the invention;
FIG. 2B is a schematic bottom view of a cross section XX' of a light emitting device according to an embodiment of the present invention;
fig. 3 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 4 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 5 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 6 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 7 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 8 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 9 is a schematic view of a light emitting device according to an embodiment of the invention;
fig. 10 is a schematic view of a light emitting device according to an embodiment of the invention.
Description of the symbols
A1 positive light emergent area
A2 back light-transmitting area
A3 light-receiving area
A4 light-transmitting area
T-shaped opening
L light ray
R1, R2 rewiring
W wire
1 substrate, first substrate
11 front surface
111 first plane
112 second plane
12 back surface
121. 122 detection electrode
123. 124 conductive electrode
2 light emitting unit
21 first surface
211 first electrode
22 second surface
222 second electrode
23. 231, 232, 233, 234 conductive connecting piece
24 semiconductor layer structure
241 reflective region
3 photo detection unit
4 adhesive layer
5 optical substrate
6 second substrate
62 outer surface
Detailed Description
The following detailed description of the various embodiments of the invention, taken in conjunction with the accompanying drawings, is provided by way of illustration. In the description of the specification, numerous specific details are set forth in order to provide a more thorough understanding of the invention; however, the present invention may be practiced without some or all of these specific details. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is particularly noted that the drawings are merely schematic and do not represent actual sizes or quantities of elements, and that some of the details may not be fully drawn for clarity of the drawings.
Referring to fig. 1, a light emitting device according to an embodiment of the invention includes a substrate 1, a light emitting unit 2, and a light detecting unit 3. The substrate 1 includes a front surface 11 and a back surface 12, and the back surface 12 is opposite to the front surface 11. The substrate 1 may be a light-transmissive substrate, for example: the substrate 1 may comprise Sapphire (Sapphire), glass, or silicon carbide (SiC), but not limited thereto, and in the embodiment, the substrate 1 may also be an opaque substrate, such as: a silicon substrate or a Printed Circuit Board (PCB).
The light emitting unit 2 is provided on the front surface 11 side. The light emitting unit 2 includes a first surface 21 and a second surface 22, and the second surface 22 is disposed opposite to the first surface 21, wherein the second surface 22 of the light emitting unit 2 faces the front surface 11 of the substrate 1.
In one embodiment, the light Emitting unit 2 is a laser, the first Surface 21 of the light Emitting unit 2 has one or more positive light transmitting regions a1 for outputting operating laser light of the light Emitting device, i.e., the first Surface 21 serves as a main light Emitting Surface of the light Emitting device, in one embodiment, the light Emitting unit 2 may be a Vertical Cavity Surface Emitting laser (VCSE L), but not limited thereto, in at least one embodiment, the light Emitting unit 2 includes a semiconductor stack, and a pn interface (junction) is formed at a boundary between adjacent semiconductor pn layers of different electrical properties to generate a depletion region (or active layer) to emit light, and a plurality of positive light transmitting regions a1 near the first Surface 21 side is defined, in one embodiment, the material of the semiconductor stack includes a semiconductor stack of three-five-group compounds, such as inp, as, AlInP, InGaP, algaap, and algaap-n series semiconductor stack, which can emit light with a peak wavelength between the wavelength of 700nm and 700nm when the wavelength of the infrared light and the peak wavelength of the active layer is between the wavelength of the semiconductor stack, 400 nm.
With reference to fig. 1, the light emitting unit 2 has a back light-transmitting area a2 on the second surface 22 side for outputting a light ray L for monitoring, that is, the second surface 22 serves as a monitoring light-emitting surface of the light emitting device, wherein the area of the back light-transmitting area a2 of the second surface 22 is smaller than the total area of the one or more front light-emitting areas a1 of the first surface 21 to control the working laser generated inside the light emitting unit 2 to be mostly output from the first surface 21 side, thereby improving the light-emitting efficiency, in the present embodiment, the semiconductor layer of the light emitting unit 2 includes a semiconductor layer structure 24, and the semiconductor layer structure 24 is disposed near the second surface 22 side, the semiconductor layer structure 24 includes the back light-transmitting area a2 and a light-reflecting area 241, and the light-reflecting area 241 surrounds the back light-transmitting area a2, for example, the light-reflecting area 241 includes a plurality of overlapped layer structures to form a Distributed Bragg Reflector (DBR), so that the working laser emitted from the active layer can reflect light in the same dimming direction as the light-transmitting area a blue light or the blue light-emitting area 2.
In order to improve the package structure and save the total volume of the light emitting device, please refer to fig. 1 and 2A together, in at least one embodiment, the light detecting unit 3 is disposed between the front surface 11 of the substrate 1 and the second surface 22 of the light emitting unit 2, in detail, in the embodiment shown in fig. 1, the light detecting unit 3 is disposed on the first surface 21 of the substrate 1 and is directly and electrically connected to the substrate 1, in the embodiment shown in fig. 2A, the light detecting unit 3 is disposed on the second surface 22 of the light emitting unit 2 and is directly and electrically connected to the first electrode 211 and the second electrode 222 through a redistribution layer (Re-Distribution L eyes), for convenience of the text, the light detecting unit 3 is hereinafter referred to as being disposed adjacent to the light emitting unit 2, where the adjacent means that there is no or no indirect connecting element between the light detecting unit 3 and the light emitting unit 2, and the passivation layer or other surface processing structure for protecting the surface of the device is not limited thereto.
With reference to fig. 1, the light detecting unit 3 has a light receiving area A3 facing the back light area a2 of the light emitting unit 2, so as to receive a light ray L outputted from the back light area a2 to monitor the variation of the light emitting intensity of the light emitting unit 2, for example, the light detecting unit 3 can be a photodiode (Photo Diode). in one embodiment, the light receiving area A3 of the light detecting unit 3 is aligned with the back light area a2 of the light emitting unit 2, so as to improve the detection efficiency.
In one embodiment, the light emitting device optionally includes a control circuit disposed on the substrate 1 for receiving the voltage signals from the detecting electrodes 121 and 122 and outputting corresponding current signals to the conducting electrodes 123 and 124; for example: the control circuit is a Micro Controller Unit (MCU) electrically connected to the detecting electrodes 121 and 122 of the light detecting unit 3 and the conducting electrodes 123 and 124 of the light emitting unit 2. The microcontroller monitors the voltage signal of the light detecting unit 3 through the plurality of detecting electrodes 121, 122 and adjusts the operating current of the light emitting unit 2 through the plurality of conducting electrodes 123, 124 to control the light emitting intensity of the light emitting unit 2 on the first surface 21 to maintain the same output level.
The following illustrates the package structure of the related derivative embodiments. Referring to fig. 1, in the present embodiment, the light emitting device further includes an adhesive layer 4 and an optical substrate 5. The adhesive layer 4 has one side connected to the optical substrate 5 and the other side connected to the first surface 21 side of the light emitting unit 2. For example, the adhesion layer 4 is Benzocyclobutene (BCB) or silicon dioxide, but not limited thereto. The optical substrate 5 may be made of Sapphire (Sapphire), glass, or silicon carbide (SiC), but is not limited thereto. In some embodiments, the Optical substrate 5 may be patterned to generate a specific Optical effect, for example, the Optical substrate 5 may be a Diffractive Optical Element (Diffractive Optical Element) or a micro lens (Microlens), and the light emitting unit 2 may generate tens of thousands of laser spots, which is suitable for sensing or recognition applications, but not limited thereto.
In the present embodiment, the back surface 12 of the substrate 1 is provided with a plurality of detection electrodes 121, 122 and conductive electrodes 123, 124 separated from each other and coplanar, wherein the plurality of conductive electrodes 123, 124 are distributed on two different sides of the plurality of detection electrodes 121, 122, the plurality of detection electrodes 121, 122 are electrically connected to the light detection unit 3, and the plurality of conductive electrodes 123, 124 are electrically connected to the light emitting unit 2, in detail, the first surface 21 of the light emitting unit 2 is provided with a first electrode 211 extending to the second surface 22 across the side surface of the light emitting unit 2, so as to be coplanar with the second electrode 222 on the second surface 22, for example: the first electrode 211 is a positive electrode and the second electrode 222 is a negative electrode, or vice versa. Therefore, the light emitting unit 2 can be electrically connected to the substrate 1 through a Flip chip (Flip chip) manufacturing process, and a wire bonding manufacturing process is not required, so that the packaging volume is saved, but not limited thereto. Similarly, the two different electrodes of the light detection unit 3 may be disposed in a coplanar manner, and may be suitable for flip-chip packaging with the substrate 1, but not limited thereto.
Referring to fig. 2A and 2B together, wherein fig. 2B is a schematic bottom view of the section XX' shown in fig. 2A, in the present embodiment, the two different electrodes of the light detecting unit 3 are electrically connected to the detecting electrodes 121 and 122 respectively through redistribution lines (Re-Distribution L ayout) R1 and R2 on the second surface 22 of the light emitting element 2, so that the light detecting unit 3 can be electrically connected to the substrate 1 through a flip-chip process without a wire bonding process.
Referring to fig. 3, in the present embodiment, two electrodes of the light detecting unit 3 are respectively disposed on two opposite sides thereof, and can be electrically connected to the substrate 1 through a Wire Bonding (Wire Bonding) process by a Wire W; referring to fig. 4, in the embodiment, the first electrode 211 and the second electrode 222 of the light emitting unit 2 are respectively disposed on two opposite sides of the laser electrode, and can be electrically connected to the substrate 1 through the wire W by a wire bonding process.
Referring to fig. 1, in the present embodiment, the light emitting element includes a plurality of conductive connecting members 23 distributed on two different sides of the light detecting unit 3 to form a space for accommodating the light detecting unit 3. Two ends of each conductive connecting member 23 are respectively connected to the substrate 1 and the light emitting unit 2, and the plurality of conductive connecting members 23 are respectively electrically connected to the first electrode 211 and the second electrode 222 of the light emitting unit 2, so as to facilitate the subsequent circuit layout design, but not limited thereto.
Referring to fig. 5, in the present embodiment, the front surface 11 of the substrate 1 has a first plane 111 and a second plane 112, wherein the second plane 112 is lower than the first plane 111, and the first plane 111 surrounds the second plane 112 to form a groove structure capable of accommodating the light detecting unit 3, so that the light emitting unit 2 is disposed on the first plane 111, and the light detecting unit 3 is disposed on the second plane 112; referring to fig. 6, the light emitting device of the present embodiment is different from the embodiment shown in fig. 5 in that the substrate 1 forms a stepped groove structure for accommodating the light emitting unit 2 and the light detecting unit 3, which can also simplify the packaging process and cost of the light emitting device.
Referring to fig. 7, a light emitting device according to another embodiment of the invention includes a first substrate 1, a light emitting unit 2 and a light detecting unit 3, where the first substrate 1 includes a front surface 11, a back surface 12 and a transparent region a4 extending from the front surface 11 to the back surface 12, where the back surface 12 and the front surface 11 are disposed opposite to each other, in this embodiment, the first substrate 1 may be a transparent substrate such as Sapphire (Sapphire), glass or silicon carbide (SiC), but not limited thereto, in another embodiment, the first substrate 1 may be an opaque substrate such as a silicon substrate or a Printed Circuit Board (PCB), but has a transparent region a4, and the transparent region a4 may be composed of a transparent material, in the embodiment shown in fig. 8, the light emitting device is different from the above embodiment in that the transparent region a4 has an opening T, so that the first substrate 1 may be made of an opaque material, but not limited thereto, according to the structural design of the above embodiments, the transparent region a4 may allow light emitted by the light emitting unit 2 to pass through the first substrate 1 from one side to the other side L.
The light emitting unit 2 is disposed on the front surface 11 side, the light emitting unit 2 includes a first surface 21 and a second surface 22 disposed opposite to each other, and the detailed features, connection relationships and technical effects are as described above, in the embodiment, the second surface 22 side of the light emitting unit 2 has a back light-transmitting region a2 capable of emitting laser light L, in the embodiment shown in fig. 8, the light emitting unit 2 has a semiconductor layer-like structure 24 close to the second surface 22 side, and the semiconductor layer-like structure 24 includes a back light-transmitting region a2 and a light-reflecting region 241 surrounding the back light-transmitting region a2, and the detailed features, connection relationships and technical effects are as described above, and further embodiments of the light emitting unit 2 and the features, connection relationships and advantages thereof are as described above.
As shown in FIG. 7 and FIG. 8, the light receiving area A3 of the light detecting unit 3 can receive the laser beam L from the back light area A2 of the light emitting unit 2 through the light transmitting area A4 of the first substrate 1 to generate a corresponding voltage signal, for example, the center of the light receiving area A3 of the light detecting unit 3 is aligned with the center of the back light area A4 of the light emitting unit 2 to improve the detection efficiency, wherein, with reference to the above-mentioned components, connections, advantages and effects of the light detecting unit 3, the light emitting unit can monitor the light emitting intensity of the light emitting unit 2 at any time through the light detecting unit 3, and when the brightness detected by the light detecting unit 3 is degraded, the operating current of the light emitting unit 2 can be properly increased, and vice versa, so as to control the light emitting intensity of the light emitting unit 2 to maintain the same output level.
In an embodiment, the back surface 12 of the first substrate 1 is provided with a plurality of conductive connectors 231, 232, 233, and 234, for example, the plurality of conductive connectors 231, 232, 233, and 234 are separated from each other and coplanar, and the plurality of conductive connectors 231, 232, 233, and 234 are distributed on two different sides of the light detecting unit 3, but not limited thereto. The thickness of the conductive connectors 231, 232, 233, and 234 is greater than or equal to the thickness of the light detection unit 3, so that a space capable of accommodating the light detection unit 3 is formed between the conductive connectors 231 and 232 and the first substrate 1. Some of the conductive connectors 231 and 232 are electrically connected to the positive electrode and the negative electrode of the light detecting unit 3 through the first substrate 1, and other conductive connectors 233 and 234 are electrically connected to the first electrode 211 and the second electrode 222 of the light emitting unit 2 through the first substrate 1.
According to the above structure, the light emitting device of the present embodiment integrates the monitoring circuit formed by the first substrate, the light emitting unit and the light detecting unit, and the light emitting device with the built-in optical monitoring mechanism is produced through the integrated semiconductor manufacturing process, so that the package volume of the module end can be saved, the modularization process can be simplified, and the production cost can be reduced.
In one embodiment, the light emitting device optionally includes a control circuit disposed on the first substrate 1 for receiving the voltage signals from the conductive connectors 231 and 232 and outputting corresponding current signals to the conductive connectors 233 and 234; for example: the control circuit is a Micro Controller Unit (MCU) electrically connected to the plurality of electrically conductive connectors 231, 232 corresponding to the light detecting unit 3 and the plurality of electrically conductive connectors 233, 234 corresponding to the light emitting unit 2. The microcontroller monitors the voltage signal of the light detecting unit 3 through the plurality of conductive connectors 231 and 232 and adjusts the operating current of the light emitting unit 2 through the plurality of conductive connectors 233 and 234 to control the light emitting intensity of the light emitting unit 2 on the first surface 21 to maintain the same output level.
Referring to fig. 9, in the present embodiment, the structure of the light emitting device is different from that of the embodiment shown in fig. 7 in that the light emitting device further includes a second substrate 6 and a plurality of conductive connectors 233, 234, wherein the light detecting unit 3 is directly electrically connected to the second substrate 6, the plurality of conductive connectors 233, 234 are disposed on the back surface 12 of the first substrate 1 and distributed on different sides of the light detecting unit 3. according to this structure, one end of each conductive connector is electrically connected to the light emitting unit 2 through the first substrate 1, and the other end of each conductive connector is electrically connected to the second substrate 6. that is, the light emitting unit 2 is disposed on the first substrate 1, the light detecting unit 3 is disposed on the second substrate 6, the first substrate 1 can be connected to the second substrate 6 through the light detecting unit 3, and then the light receiving area A3 of the light detecting unit 3 can receive the laser L from the back light-transmitting area a2 of the light emitting unit 2 through the light-transmitting area a4 of the first substrate 1, so as to generate corresponding voltage signals.
Referring to fig. 10, the light emitting device of the present embodiment is different from the embodiment shown in fig. 9 in that the light transmissive region a4 has an opening T, and thus the first substrate 1 can be made of an opaque material, but not limited thereto, in other embodiments, the first substrate 1 can be bonded to the second substrate 6 through a Spacer (not shown), such as a glue or a glass, the light transmissive region a4 of the first substrate 1 can allow the laser light L emitted by the light emitting unit 2 to penetrate from one side of the first substrate 1 to the other side, and thus the light receiving region A3 of the light detecting unit 3 can receive the laser light L from the back light transmissive region a2 to generate a corresponding voltage signal.
In this embodiment, the outer surface 62 of the second substrate 6 is provided with a plurality of detection electrodes 121, 122 and conductive electrodes 123, 124 which are separated from each other and coplanar, wherein the plurality of conductive electrodes 123, 124 are distributed on two different sides of the plurality of detection electrodes 121, 122, the plurality of detection electrodes 121, 122 are electrically connected to the light detection unit 3, and the plurality of conductive electrodes 123, 124 are electrically connected to the light emitting unit 2. In detail, the first surface 21 of the light emitting unit 2 is provided with a first electrode 211 extending to the second surface 22 across the side of the light emitting unit 2 and electrically connected to the conductive electrode 123 through the first substrate 1, the conductive connecting member 233 and the second substrate 6, the second surface 22 of the light emitting unit 2 is provided with a second electrode 222 electrically connected to the conductive electrode 124 through the first substrate 1, the conductive connecting member 234 and the second substrate 6, and the anode and the cathode of the light detecting unit 3 are electrically connected to one detecting electrode 121 and the other detecting electrode 122 through the second substrate 6, respectively. Therefore, the light emitting device is suitable for flip-chip module applications, but not limited thereto.
In one embodiment, the light emitting device optionally includes a control circuit disposed on the second substrate 6 for receiving the voltage signals from the detecting electrodes 121 and 122 and outputting corresponding current signals to the conducting electrodes 123 and 124; for example: the control circuit is a Micro Controller Unit (MCU) electrically connected to the detecting electrodes 121 and 122 of the light detecting unit 3 and the conductive electrodes 123 and 124 of the light emitting unit 2. The microcontroller monitors the voltage signal of the light detecting unit 3 through the plurality of detecting electrodes 121, 122 and adjusts the operating current of the light emitting unit 2 through the plurality of conducting electrodes 123, 124 to control the light emitting intensity of the light emitting unit 2 on the first surface 21 to maintain the same output level.
In summary, some embodiments of the present invention provide a light emitting device, which mainly utilizes a back light region structure of a light emitting unit to emit laser light for monitoring, monitors the laser light through an adjacent light detecting unit to generate a voltage signal, can monitor the light emitting intensity of the light emitting unit on a main light emitting surface at any time, and timely adjust the operating current of the light emitting unit to control the light emitting unit to maintain the original performance and application effect. Meanwhile, the package structure is improved, a light emitting element with a built-in optical monitoring mechanism is produced through an integrally formed semiconductor manufacturing process, and a monitoring circuit formed by a light emitting unit and a light detecting unit is integrated into a whole through a nano-grade manufacturing process of a semiconductor technology. Therefore, the light emitting device of some embodiments of the present invention can save the packaging volume of the module end, simplify the modularization process and reduce the production cost through the integrated semiconductor device manufacturing process, for example, the light emitting device with the built-in optical monitoring mechanism is produced through the wafer level semiconductor manufacturing process, and is suitable for flip-chip packaging, a wire bonding manufacturing process is not needed, the packaging volume is saved, and the subsequent miniaturization application is facilitated.
The above-described embodiments are merely illustrative of the technical spirit and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and to implement the same, so that the scope of the present invention should not be limited by the above-described embodiments, and that all equivalent changes and modifications made in the spirit of the present invention should be covered by the scope of the present invention.
Claims (10)
1. A light-emitting element, comprising:
a substrate comprising opposing front and back surfaces;
the light-emitting unit is arranged on the front surface side and comprises a first surface and a second surface which are opposite, wherein the area of a back light-transmitting area of the second surface is smaller than the total area of at least one front light-emitting area of the first surface, and the second surface faces the front surface; and
and the light receiving area of the light detection unit is used for receiving the laser light from the back light-transmitting area.
2. The light-emitting device according to claim 1, wherein a plurality of detection electrodes and conductive electrodes are disposed on the back surface of the substrate, wherein the plurality of detection electrodes and the plurality of conductive electrodes are separated from each other and coplanar, the plurality of detection electrodes are electrically connected to the light-detecting unit, and the plurality of conductive electrodes are electrically connected to the light-emitting unit.
3. The light-emitting device according to claim 1, wherein the front surface of the substrate has a first plane and a second plane lower than the first plane, and the first plane surrounds the second plane, wherein the light-emitting unit is disposed on the first plane, and the light-detecting unit is disposed on the second plane.
4. The light-emitting device according to claim 1, wherein the light-emitting unit comprises a semiconductor layer structure near the second surface side, the semiconductor layer structure comprising the back light-transmitting region and a light-reflecting region surrounding the back light-transmitting region, wherein a transmittance of the back light-transmitting region is greater than a transmittance of the light-reflecting region.
5. The light-emitting element according to claim 1, further comprising:
and two ends of each conductive connecting piece are respectively connected with the substrate and the light-emitting unit, and the conductive connecting pieces are distributed on two different sides of the light detection unit.
6. A light-emitting element, comprising:
a first substrate including opposite front and back surfaces and a light-transmitting region extending from the front surface to the back surface;
the light-emitting unit is arranged on the front surface side and comprises a first surface and a second surface which are opposite, wherein the area of a back light-transmitting area of the second surface is smaller than the total area of at least one front light-emitting area of the first surface, and the second surface faces the front surface; and
and the light receiving area of the light detection unit is used for receiving the laser light from the back light-transmitting area through the light-transmitting area.
7. The light-emitting device according to claim 6, wherein the back surface of the first substrate is provided with a plurality of conductive connectors separated from each other and coplanar, wherein the plurality of conductive connectors are disposed on two different sides of the light detecting unit, some of the plurality of detecting electrodes are electrically connected to the light detecting unit, and the rest of the plurality of conductive electrodes are electrically connected to the light-emitting unit.
8. The light-emitting device according to claim 6, wherein the light-emitting unit comprises a semiconductor layer structure near the second surface side, the semiconductor layer structure comprising the back light-transmissive region and a light-reflective region surrounding the back light-transmissive region, wherein the transmittance of the back light-transmissive region is greater than that of the light-reflective region.
9. The light-emitting element according to claim 6, further comprising:
a plurality of conductive connecting pieces arranged on the back surface and distributed on two different sides of the light detection unit, wherein one end of each conductive connecting piece is electrically connected with the light-emitting unit; and
and a second substrate disposed at the other end of the conductive connecting members with respect to the first substrate, wherein the light detecting unit is disposed on the second substrate.
10. The light-emitting device according to claim 9, wherein the second substrate comprises a plurality of detection electrodes and conductive electrodes separated from each other and coplanar, and disposed on an outer surface of the second substrate opposite to the light-detecting unit, wherein the plurality of conductive electrodes are disposed on two different sides of the plurality of detection electrodes, the plurality of detection electrodes are electrically connected to the light-detecting unit, and the plurality of conductive electrodes are electrically connected to the plurality of conductive connecting members.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108101567A TWI675522B (en) | 2019-01-15 | 2019-01-15 | Light-emitting element |
| TW108101567 | 2019-01-15 |
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| CN111435780A true CN111435780A (en) | 2020-07-21 |
| CN111435780B CN111435780B (en) | 2023-08-29 |
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Also Published As
| Publication number | Publication date |
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| TW202029601A (en) | 2020-08-01 |
| TWI675522B (en) | 2019-10-21 |
| CN111435780B (en) | 2023-08-29 |
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