CN111430481B - 碲化镉薄膜太阳能聚光组件及制作方法 - Google Patents
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Abstract
本发明公开了一种碲化镉薄膜太阳能聚光组件,包括碲化镉太阳能电池本体,所述碲化镉太阳能电池本体横向分割成若干独立的碲化镉太阳能电池组件;所述若干独立的碲化镉太阳能电池组件背部沉积有背电极;所述碲化镉太阳能电池本体上刻蚀有贯通该碲化镉太阳能电池本体上所有碲化镉太阳能电池组件的分流线;所述分流线两端各设置有一条连通所有分流线的引汇流带;还包括覆盖在碲化镉太阳能电池本体上的背板,所述背板上开有两个供引汇流带穿出的小孔;所述引汇流带穿出小孔的部分上安装有接线盒。通过分割电池本体,加大间距,加厚背电极等方式提高电流通过能力,加强散热,从而应对聚光组件的工况。
Description
技术领域
本发明涉及一种碲化镉薄膜太阳能聚光组件及其制作方法。
背景技术
聚光型光伏方案,因其高转换效率、低原材料消耗、低占地面积等优势,被广大电站用户所认识。然而聚光会大幅度提升单元面积内的太阳光辐照强度,从而提高太阳能组件的电流,提升组件的转换率;同时,太阳能组件的工作温度会大幅升高,对组件承载大电流的能力也有了更高的要求。
现有聚光光伏组件多采用由锗、砷化镓、镓铟磷3种不同的半导体材料形成3个p-n结,利用3种材料不同的禁带宽度,分别吸收不同波段的太阳光,从而实现对太阳光的全谱吸收。砷化镓聚光组件因其高昂的制造成本、复杂的制作工艺,无法进行规模化、稳定化的生产,无法做到最大限度的成本降低。而光伏组件单瓦成本的增加,会导致电站整体成本的增加,无法实现聚光太阳能高转换率、低成本的目标,无法实现理想收益。
发明内容
有鉴于此,本发明提供一种碲化镉薄膜太阳能聚光组件及制作方法,提升电流承载能力。
为解决以上技术问题,本发明的技术方案为:一种碲化镉薄膜太阳能聚光组件,包括碲化镉太阳能电池本体,所述碲化镉太阳能电池本体横向分割成若干独立的碲化镉太阳能电池组件;所述若干独立的碲化镉太阳能电池组件背部沉积有背电极;所述碲化镉太阳能电池本体上刻蚀有贯通该碲化镉太阳能电池本体上所有碲化镉太阳能电池组件的分流线;所述分流线两端各设置有一条连通所有分流线的引汇流带;还包括覆盖在碲化镉太阳能电池本体上的背板,所述背板上开有两个供引汇流带穿出的小孔;所述引汇流带穿出小孔的部分上安装有接线盒。
作为一种改进,所述碲化镉太阳能电池本体上与背板相对的一面覆盖有TCO玻璃。
作为一种改进,每个碲化镉太阳能电池本体上设置有三条分流线。
作为一种优选,相邻碲化镉太阳能电池组件之间的间隔为315-325um。碲化镉太阳能电池组件由碲化镉太阳能电池本体刻蚀而成。本发明中刻蚀采用三道激光线,每道激光线刻蚀宽度为100um左右,激光线间的间距为10um左右,因此相邻碲化镉太阳能电池组件之间的间隔为315-325um。
作为一种优选,所述分流线的宽度为58-62um。
作为一种优选,所述背电极的厚度为580-620um。
作为一种优选,所述引汇流带为镀锡铜带,并利用导电胶层粘合在碲化镉太阳能电池本体上。
作为一种优选,所述背板上的小孔孔径为18-22mm,其中心距背板边缘的距离为28-32mm。
本发明还提供一种碲化镉薄膜太阳能聚光组件的制作方法,包括以下步骤:
A.将碲化镉太阳能电池本体横向刻蚀成若干碲化镉太阳能电池组件;
B.每个碲化镉太阳能电池组件背部沉积背电极;
C.在碲化镉太阳能电池本体上刻蚀贯通该碲化镉太阳能电池本体上所有碲化镉太阳能电池组件的分流线;
D.在分流线两端个铺设一条连通所有分流线的引汇流带;
E.覆盖背板,并将引汇流带从小孔中引出;
F.压制成型;
G.在从小孔中引出的引汇流带上安装分体式接线盒。
作为一种改进,所述分体式接线盒通过焊接并灌封的方式制作。
本发明的有益之处在于:具有上述结构的碲化镉薄膜太阳能聚光组件使用碲化镉发电玻璃为基础材料,可大幅度降低聚光组件的生产成本。分流线使得若干组件变为小电池的并联,单一小电池的故障不会影响其它小电池的正常工作,在项目运用中,可大幅度降低维护成本。另外通过分割电池本体,加大间距,加厚背电极等方式提高电流通过能力,加强散热,从而应对聚光组件的工况。
附图说明
图1为本发明中碲化镉太阳能电池本体的示意图。
图2为本发明中碲化镉太阳能电池本体分割成若干碲化镉太阳能电池组件后的示意图。
图3为沉积了背电极并刻蚀分流线、铺设引汇流带后的示意图。
图4为加装了背板后的示意图。
图5为安装了分体式接线盒后的示意图。
图6为制作流程图。
图中标记:1碲化镉薄膜太阳能电池本体、2碲化镉薄膜太阳能电池组件、3分流线、4引汇流带、5背电极、6背板、7小孔、8分体式接线盒。
具体实施方式
为了使本领域的技术人员更好地理解本发明的技术方案,下面结合具体实施方式对本发明作进一步的详细说明。
如图1-图5所示,本发明提供一种碲化镉薄膜太阳能聚光组件,包括碲化镉太阳能电池本体1,本实施例中碲化镉太阳能电池本体1有4个。所述碲化镉太阳能电池本体1横向分割成若干独立的碲化镉太阳能电池组件2;所述若干独立的碲化镉太阳能电池组件2背部沉积有背电极5;所述碲化镉太阳能电池本体1上刻蚀有贯通该碲化镉太阳能电池本体1上所有碲化镉太阳能电池组件2的分流线3;所述分流线3两端各设置有一条连通所有分流线3的引汇流带4;还包括覆盖在碲化镉太阳能电池本体1上的背板6,所述背板6上开有两个供引汇流带穿出的小孔7;所述引汇流带4穿出小孔7的部分上安装有接线盒。所述接线盒为分体式接线盒8。碲化镉太阳能电池本体1上与背板6相对的一面覆盖有TCO玻璃。
每个碲化镉太阳能电池本体1上设置有三条分流线3。相邻碲化镉太阳能电池组件2之间的间隔为315-325um。所述分流线3的宽度为58-62um。所述背电极5的厚度为580-620um。引汇流带4为镀锡铜带,并利用导电胶层粘合在碲化镉太阳能电池本体1上。背板6上的小孔7孔径为18-22mm,其中心距背板6边缘的距离为28-32mm。
本发明还提供一种碲化镉薄膜太阳能聚光组件的制作方法,包括以下步骤:
A.将碲化镉太阳能电池本体横向刻蚀成若干碲化镉太阳能电池组件;激光刻蚀宽度设置为100um,刻线间距为10um,满足了电流承载性能的提升,同时又未损失电池的性能。
B.每个碲化镉太阳能电池组件背部沉积背电极;电流在背电极层中的通过方式为横向通过,所以加厚背电极沉积可以增加背电极层的横截面积,加大背电极层的通过能力,将背电极的沉积厚度设置为580-620nm,可提升背电极层两倍的电流承载能力。背电极的加厚沉积通过增加溅射功率(15KW)提升、降低传输速度(15m/min)、改变沉膜气压(0.45mbar),在增加背电极厚度的同时,保证背电极的方阻值不变。
C.在碲化镉太阳能电池本体上刻蚀贯通该碲化镉太阳能电池本体上所有碲化镉太阳能电池组件的分流线;分流线制作中,通过特定的分流线宽度(58-62um)、分流线条数(12条,每个碲化镉太阳能电池本体3条),在保证分流作用的同时,还可起到防止热斑效应的效果。
D.在分流线两端个铺设一条连通所有分流线的引汇流带;引汇流带由镀锡铜制作,并利用导电胶层粘合在碲化镉太阳能电池本体上。
E.覆盖背板,并将引汇流带从小孔中引出;背板的采用小孔直径18-22mm,孔中心距边缘28-32mm设计,在保证开孔大小的同时,背板的机械强度与内在应力无变化。
F.压制成型;采用组件层压的方式,利用上下板形成一个腔室把电池本体和背板压合在一起。
G.在从小孔中引出的引汇流带上安装分体式接线盒。分体式接线盒将电池的正负极分开。分体式接线盒通过焊接并灌封的方式制作。组件电流的增加,需要接线盒必须有更好的散热性能与电流承载能力,焊接、灌封的方式可大幅度提升接线盒的散热性能,而线缆选用4mm2,可提升接线盒两倍的电流承载能力。
综上所述,由多种措施相结合的方式,可将现有电池组件的电流承载能力提升3倍左右,极大程度上可满足聚光条件下的使用。
以上仅是本发明的优选实施方式,应当指出的是,上述优选实施方式不应视为对本发明的限制,本发明的保护范围应当以权利要求所限定的范围为准。对于本技术领域的普通技术人员来说,在不脱离本发明的精神和范围内,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (9)
1.一种碲化镉薄膜太阳能聚光组件,包括碲化镉太阳能电池本体,其特征在于:所述碲化镉太阳能电池本体横向分割成若干独立的碲化镉太阳能电池组件;所述若干独立的碲化镉太阳能电池组件背部沉积有背电极;所述碲化镉太阳能电池本体上刻蚀有贯通该碲化镉太阳能电池本体上所有碲化镉太阳能电池组件的分流线;所述分流线使得若干独立的碲化镉太阳能电池组件变为小电池的并联;所述分流线两端各设置有一条连通所有分流线的引汇流带;还包括覆盖在碲化镉太阳能电池本体上的背板,所述背板上开有两个供引汇流带穿出的小孔;所述引汇流带穿出小孔的部分上安装有接线盒,所述接线盒为分体式接线盒;所述分体式接线盒通过焊接并灌封的方式制作;
所述碲化镉太阳能电池本体上与背板相对的一面覆盖有TCO玻璃。
2.根据权利要求1所述的一种碲化镉薄膜太阳能聚光组件,其特征在于:相邻碲化镉太阳能电池组件之间的间隔为315-325um。
3.根据权利要求1所述的一种碲化镉薄膜太阳能聚光组件,其特征在于:每个碲化镉太阳能电池本体上设置有三条分流线。
4.根据权利要求1所述的一种碲化镉薄膜太阳能聚光组件,其特征在于:所述分流线的宽度为58-62um。
5.根据权利要求1所述的一种碲化镉薄膜太阳能聚光组件,其特征在于:所述背电极的厚度为580-620um。
6.根据权利要求1所述的一种碲化镉薄膜太阳能聚光组件,其特征在于:所述引汇流带为镀锡铜带,并利用导电胶层粘合在碲化镉太阳能电池本体上。
7.根据权利要求1所述的一种碲化镉薄膜太阳能聚光组件,其特征在于:所述背板上的小孔孔径为18-22mm,其中心距背板边缘的距离为28-32mm。
8.一种对权利要求1所述的碲化镉薄膜太阳能聚光组件的制作方法,其特征在于,包括以下步骤:
A .将碲化镉太阳能电池本体横向刻蚀成若干碲化镉太阳能电池组件;
B .每个碲化镉太阳能电池组件背部沉积背电极;
C .在碲化镉太阳能电池本体上刻蚀贯通该碲化镉太阳能电池本体上所有碲化镉太阳能电池组件的分流线;
D .在分流线两端个铺设一条连通所有分流线的引汇流带;
E .覆盖背板,并将引汇流带从小孔中引出;
F .压制成型;
G .在从小孔中引出的引汇流带上安装分体式接线盒。
9.根据权利要求8所述的制作方法,其特征在于:所述分体式接线盒通过焊接并灌封的方式制作。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5131954A (en) * | 1990-10-15 | 1992-07-21 | United Solar Systems Corporation | Monolithic solar cell array and method for its manufacturing |
CN101743645A (zh) * | 2007-07-13 | 2010-06-16 | 夏普株式会社 | 薄膜太阳能电池模块 |
CN106684209A (zh) * | 2016-12-27 | 2017-05-17 | 成都中建材光电材料有限公司 | 一种新型碲化镉薄膜太阳能电池组件的制备方法 |
CN106711284A (zh) * | 2016-12-27 | 2017-05-24 | 中山瑞科新能源有限公司 | 一种双节叠层并联的碲化镉薄膜太阳能电池制造工艺方法 |
CN109273545A (zh) * | 2018-11-01 | 2019-01-25 | 成都中建材光电材料有限公司 | 一种碲化镉薄膜太阳能电池组件的制作方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6864414B2 (en) * | 2001-10-24 | 2005-03-08 | Emcore Corporation | Apparatus and method for integral bypass diode in solar cells |
KR101301029B1 (ko) * | 2009-10-30 | 2013-08-28 | 엘지전자 주식회사 | 박막 태양전지 모듈 |
-
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- 2020-05-09 CN CN202010389808.9A patent/CN111430481B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5131954A (en) * | 1990-10-15 | 1992-07-21 | United Solar Systems Corporation | Monolithic solar cell array and method for its manufacturing |
CN101743645A (zh) * | 2007-07-13 | 2010-06-16 | 夏普株式会社 | 薄膜太阳能电池模块 |
CN106684209A (zh) * | 2016-12-27 | 2017-05-17 | 成都中建材光电材料有限公司 | 一种新型碲化镉薄膜太阳能电池组件的制备方法 |
CN106711284A (zh) * | 2016-12-27 | 2017-05-24 | 中山瑞科新能源有限公司 | 一种双节叠层并联的碲化镉薄膜太阳能电池制造工艺方法 |
CN109273545A (zh) * | 2018-11-01 | 2019-01-25 | 成都中建材光电材料有限公司 | 一种碲化镉薄膜太阳能电池组件的制作方法 |
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