CN111427109A - Preparation method of coupling incidence grating mother plate of optical waveguide display module in AR display - Google Patents
Preparation method of coupling incidence grating mother plate of optical waveguide display module in AR display Download PDFInfo
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- CN111427109A CN111427109A CN202010331098.4A CN202010331098A CN111427109A CN 111427109 A CN111427109 A CN 111427109A CN 202010331098 A CN202010331098 A CN 202010331098A CN 111427109 A CN111427109 A CN 111427109A
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- silicon nitride
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/017—Head mounted
- G02B27/0172—Head mounted characterised by optical features
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention discloses a method for preparing a coupling incident grating master plate of an optical waveguide display module in AR display, which comprises the following steps: s1, taking the beveled (110) monocrystalline silicon as a substrate; s2, plating a silicon nitride layer on the oblique cutting plane of the substrate; s3, spin-coating a positive photoresist on the silicon nitride layer; s4, obtaining a photoresist grating mask through ultraviolet lithography and development; s5, etching the exposed silicon nitride; s6, removing the photoresist grating mask on the silicon nitride layer to obtain a silicon nitride grating; s7, corroding in a potassium hydroxide solution by taking silicon nitride as a masking layer to obtain a parallelogram chute microstructure; and S8, placing the mask in HF acid to remove the residual silicon nitride grating mask, and obtaining the parallelogram skewed slot silicon grating. The crystal face of the working face (111) of the coupled incident grating master plate prepared by adopting the monocrystalline silicon anisotropic etching technology is flat and smooth, so that the preparation cost of the master plate is reduced, and the dependence on equipment is reduced.
Description
Technical Field
The invention belongs to the technical field of augmented reality and provides a preparation method of a coupling incident grating master plate of an optical waveguide display module in AR display.
Background
Augmented Reality (AR) technology is a new environment with rich perception effect presented to users by generating virtual objects which do not exist in the physical world by means of computer graphics technology and visualization technology and accurately placing the virtual objects in the physical world. The method has great potential application value in various fields, such as industrial manufacturing and maintenance fields, medical fields, military fields, entertainment and game fields, education fields and the like.
The waveguide lens is a core component in an AR display device and mainly consists of three parts: the grating of the coupling incidence grating area is mostly prepared by a nano-imprinting process, a coupling incidence grating mother plate needs to be prepared before the preparation of the grating is carried out by the nano-imprinting process, the existing coupling incidence grating is mostly of a parallelogram structure, and the preparation of the grating mother plate of the parallelogram structure generally has the problems of high equipment requirement and high preparation cost.
Disclosure of Invention
The invention provides a method for preparing a coupling incidence grating master plate of an optical waveguide display module in AR display, which adopts a monocrystalline silicon anisotropic etching technology to prepare a quadrilateral coupling incidence grating master plate, reduces the manufacturing cost of the master plate and reduces the dependence on equipment.
In order to achieve the purpose, the invention adopts the technical scheme that: a method for preparing a coupling incidence grating master plate of an optical waveguide display module in AR display specifically comprises the following steps:
s1, taking the beveled (110) monocrystalline silicon as a substrate;
s2, plating a silicon nitride layer on the oblique cutting plane of the substrate;
s3, spin-coating a positive photoresist on the silicon nitride layer;
s4, exposing through the grating mask under an ultraviolet photoetching machine, and developing the exposed photoresist in a developing solution to obtain a photoresist grating mask;
s5, etching the exposed silicon nitride by using a plasma etching machine;
s6, after the plasma etching is finished, placing the silicon nitride layer in a developing solution, and removing the photoresist grating mask on the silicon nitride layer to obtain a silicon nitride grating;
s7, corroding in a potassium hydroxide solution by taking silicon nitride as a masking layer to obtain a parallelogram chute microstructure;
and S8, placing the grating in HF acid to remove the residual silicon nitride grating mask and obtain the parallelogram skewed slot silicon grating, namely the coupling incident grating.
Further, in step S7, the single crystal silicon substrate is etched by selecting a potassium hydroxide solution having a mass fraction of 50% and a bath temperature of 70 ℃.
Further, the beveling angle of the substrate is 20 to 35 °.
The invention adopts the monocrystalline silicon anisotropic etching technology to prepare the quadrilateral coupled incident grating master mask, the crystal face (111) of the working face of the grating master mask is flat and smooth, the manufacturing cost of the master mask is reduced, and the dependence on equipment is reduced.
Drawings
Fig. 1 is a flowchart of a method for preparing a coupled-incidence grating master for an AR display optical waveguide display module according to an embodiment of the present invention, where (a) is a schematic diagram of a substrate, (b) is a schematic diagram of a sample after silicon nitride is plated, (c) is a schematic diagram of a sample after a positive photoresist is coated, (d) is a schematic diagram of a sample after photoresist development, (e) is a schematic diagram of a sample after plasma etching, (f) is a schematic diagram of a sample after a photoresist grating mask is removed, (g) is a schematic diagram of a sample after etching in a potassium hydroxide solution, and (h) is a schematic diagram of a sample after a residual silicon nitride grating mask is removed.
Detailed Description
The following detailed description of the embodiments of the present invention will be given in order to provide those skilled in the art with a more complete, accurate and thorough understanding of the inventive concept and technical solutions of the present invention.
Fig. 1 is a flowchart of a method for preparing a coupled incident grating master of an optical waveguide display module in AR display according to an embodiment of the present invention, where the method specifically includes the following steps:
s1, using bevel (110) single crystal silicon as a substrate, as shown in FIG. 1(a)
In the embodiment of the invention, the beveling angle of the monocrystalline silicon is 20-35 degrees,
s2, plating a silicon nitride layer with the thickness of 50nm on the oblique cutting plane of the substrate, as shown in figure 1(b), wherein the silicon nitride plays a role in protecting in the subsequent anisotropic etching;
s3, spin-coating 200nm thick positive photoresist on the silicon nitride layer, as shown in FIG. 1(c), the main component of the positive photoresist is propylene glycol monomethyl ether acetate, which has high sensitivity and high adhesiveness;
s4, exposing through the grating mask plate under an ultraviolet photoetching machine, and developing the exposed photoresist in a developing solution to obtain a photoresist grating mask as shown in figure 1 (d);
in embodiments of the present invention, the substrate trim is aligned with the lines of the grating mask before exposure is initiated, where the two are as parallel as possible.
S5, etching the exposed silicon nitride by using a plasma etching machine, as shown in figure 1 (e);
s6, after the plasma etching is finished, placing the silicon nitride layer in a developing solution, and removing the photoresist grating mask on the silicon nitride layer to obtain a silicon nitride grating, as shown in a figure 1 (f);
s7, etching in potassium hydroxide solution by taking silicon nitride as a masking layer to obtain a parallelogram chute microstructure, as shown in figure 1 (g);
in the embodiment of the invention, under the same solution temperature, the higher the potassium hydroxide concentration is, the smoother the (111) surface is, in the embodiment of the invention, the potassium hydroxide solution with the mass percentage of 50% and the water bath temperature of 70 ℃ is selected to corrode the monocrystalline silicon substrate; the basis of the anisotropic corrosion of the monocrystalline silicon is that the potassium hydroxide solution is utilized to etch the (111) crystal face and the (110) crystal face of the (110) silicon wafer at different etching rate ratios, and the corrosion is carried out along the (111) crystal face under the protection action of the silicon nitride grating mask, so that the parallelogram chute microstructure is finally formed.
And S8, placing the grating mask in HF acid to remove the residual silicon nitride grating mask, and obtaining the parallelogram skewed slot silicon grating, as shown in figure 1(h), namely the coupling incident grating master plate.
The invention adopts the monocrystalline silicon anisotropic etching technology to prepare the quadrilateral coupled incident grating master mask, the crystal face (111) of the working face of the grating master mask is flat and smooth, the preparation cost of the master mask is reduced, and the dependence on equipment is reduced.
The invention has been described above with reference to the accompanying drawings, it is obvious that the invention is not limited to the specific implementation in the above-described manner, and it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial modification.
Claims (3)
1. A method for preparing a coupling incidence grating master plate of an optical waveguide display module in AR display is characterized by comprising the following steps:
s1, taking the beveled (110) monocrystalline silicon as a substrate;
s2, plating a silicon nitride layer on the oblique cutting plane of the substrate;
s3, spin-coating a positive photoresist on the silicon nitride layer;
s4, exposing through the grating mask under an ultraviolet photoetching machine, and developing the exposed photoresist in a developing solution to obtain a photoresist grating mask;
s5, etching the exposed silicon nitride by using a plasma etching machine;
s6, after the plasma etching is finished, placing the silicon nitride layer in a developing solution, and removing the photoresist grating mask on the silicon nitride layer to obtain a silicon nitride grating;
s7, corroding in a potassium hydroxide solution by taking silicon nitride as a masking layer to obtain a parallelogram chute microstructure;
and S8, placing the grating in HF acid to remove the residual silicon nitride grating mask and obtain the parallelogram skewed slot silicon grating, namely the coupling incident grating.
2. The method for preparing a master grating for coupling incidence of an optical waveguide display module in AR display as claimed in claim 1, wherein the single crystal silicon substrate is etched by using the potassium hydroxide solution with a mass fraction of 50% and a water bath temperature of 70 ℃ in step S7.
3. The method of claim 1, wherein the oblique cut angle of the substrate is 20 ° to 35 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010331098.4A CN111427109A (en) | 2020-04-23 | 2020-04-23 | Preparation method of coupling incidence grating mother plate of optical waveguide display module in AR display |
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| CN202010331098.4A CN111427109A (en) | 2020-04-23 | 2020-04-23 | Preparation method of coupling incidence grating mother plate of optical waveguide display module in AR display |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103901520A (en) * | 2014-04-23 | 2014-07-02 | 中国科学技术大学 | Method for manufacturing triangular groove echelon gratings with 90-degree vertex angles |
| CN106842397A (en) * | 2017-01-05 | 2017-06-13 | 苏州苏大维格光电科技股份有限公司 | A kind of resin holographical wave guide eyeglass and preparation method thereof and three-dimensional display apparatus |
| CN107250888A (en) * | 2015-02-09 | 2017-10-13 | 微软技术许可有限责任公司 | Display system |
-
2020
- 2020-04-23 CN CN202010331098.4A patent/CN111427109A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103901520A (en) * | 2014-04-23 | 2014-07-02 | 中国科学技术大学 | Method for manufacturing triangular groove echelon gratings with 90-degree vertex angles |
| CN107250888A (en) * | 2015-02-09 | 2017-10-13 | 微软技术许可有限责任公司 | Display system |
| CN106842397A (en) * | 2017-01-05 | 2017-06-13 | 苏州苏大维格光电科技股份有限公司 | A kind of resin holographical wave guide eyeglass and preparation method thereof and three-dimensional display apparatus |
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Application publication date: 20200717 |
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| RJ01 | Rejection of invention patent application after publication |