CN111424264A

CN111424264A - Thin film material deposition reaction device

Info

Publication number: CN111424264A
Application number: CN202010353114.XA
Authority: CN
Inventors: 李哲峰; 张光海; 聆领安辛
Original assignee: Shenzhen Yuansu Photoelectric Technology Co ltd
Current assignee: Shenzhen Yuansu Photoelectric Technology Co ltd
Priority date: 2020-04-27
Filing date: 2020-04-27
Publication date: 2020-07-17

Abstract

The invention discloses a thin film material deposition reaction device, which comprises: the gas distribution table comprises a gas transmission cavity and a diffusion cavity, a plurality of diffusion grooves arranged at intervals are arranged in the diffusion cavity, and each diffusion groove is communicated with the gas transmission cavity; the primary gas diffusion piece is arranged in the diffusion groove and used for diffusing the gas entering the diffusion groove from the gas transmission cavity; and the secondary gas diffusion piece is arranged at the notch of the diffusion groove, and the primary gas diffusion piece is positioned between the secondary gas diffusion piece and the communication position of the gas transmission cavity and the diffusion cavity. The thin film material deposition reaction device provided by the invention can improve the uniformity of the atomic deposition film deposited on the surface of the film material.

Description

Thin film material deposition reaction device

Technical Field

The invention relates to the technical field of thin film processing, in particular to a thin film material deposition reaction device.

Background

The deposition reaction forms of the thin film material include atomic layer deposition reaction, chemical vapor deposition, and the like, and taking the atomic layer deposition reaction of the thin film material as an example, the atomic layer deposition reaction is a technique of forming a monoatomic deposition film by alternately introducing a precursor of a vapor phase into a reaction vessel to chemisorb and react on a substrate. In an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous atomic film in such a way that only one atomic layer is deposited per reaction.

The precursor enters the reaction container in a gaseous state, the existing precursor is mainly supplied into the reaction container through an air nozzle for centralized air supply, and the precursor entering the reaction container can be contacted with all parts of the surface of the substrate only through a long diffusion process. The concentration of the precursor near the air tap can be obviously higher than that of the precursor far away from the air tap, the surface of the base body closer to the air tap is contacted with the precursor earlier to generate atomic layer deposition reaction, the concentration of the precursor near the air tap is originally higher, the thickness of the atomic layer deposited on the surface of the base body close to the air tap is thicker, the thickness of the atomic layer deposited on the surface of the base body far away from the air tap is thinner, and the thickness of the atomic layer deposited on each part of the surface of the base body is not uniform enough.

The above is only for the purpose of assisting understanding of the technical solutions of the present application, and does not represent an admission that the above is prior art.

Disclosure of Invention

The invention mainly aims to provide a thin film material deposition reaction device, aiming at improving the deposition rate and uniformity of an atomic deposition film deposited on the surface of a film material.

In order to achieve the above object, the present invention provides a thin film material deposition reaction apparatus, comprising:

the gas distribution table comprises a gas transmission cavity and a diffusion cavity, a plurality of diffusion grooves arranged at intervals are arranged in the diffusion cavity, and each diffusion groove is communicated with the gas transmission cavity;

the primary gas diffusion piece is arranged in the diffusion groove and used for diffusing the gas entering the diffusion groove from the gas transmission cavity; and

and the secondary gas diffusion piece is arranged on a notch of the diffusion groove, and the primary gas diffusion piece is positioned between the secondary gas diffusion piece and the communication position of the gas transmission cavity and the diffusion cavity.

In one embodiment of the invention, the primary gas diffuser is floe;

or, the primary gas diffusion piece is a diffusion tube, the diffusion tube is provided with an inner cavity, the diffusion tube is provided with a plurality of diffusion micropores communicated with the diffusion groove and the inner cavity, and the diffusion micropores are arranged at intervals;

or the primary gas diffusion piece is a diffusion sheet, the diffusion sheet is provided with a through hole, and the through hole is arranged in a long strip shape.

In an embodiment of the present invention, the primary gas diffusion member is a diffusion plate, the bottom wall of the diffusion groove is provided with a gas inlet hole communicated with the gas transmission cavity, the diffusion plate is provided with a concentrated gas supply area corresponding to the gas inlet hole, and the concentrated gas supply area is provided with a plurality of diffusion holes;

the aperture of the plurality of diffusion holes is gradually increased from the center of the concentrated air supply region to the periphery of the concentrated air supply region; and/or the distribution density of the plurality of diffusion holes is gradually increased from the center of the concentrated air supply region to the periphery of the concentrated air supply region.

In an embodiment of the present invention, the plurality of diffusion holes are radially distributed from the center of the central gas supply area to the periphery of the central gas supply area;

or the plurality of diffusion holes are sequentially arranged from the center of the centralized gas supply area to the periphery of the centralized gas supply area, and the centers of the plurality of diffusion holes can be sequentially connected to form a spiral ring.

In an embodiment of the present invention, a limiting boss is convexly disposed on a bottom wall of the diffusion groove, and the primary gas diffusion member is abutted and limited on the limiting boss.

In an embodiment of the present invention, the thin film material deposition reaction apparatus includes a plurality of primary gas diffusers, the plurality of primary gas diffusers are sequentially arranged at intervals from the bottom wall of the diffusion groove to the notch of the diffusion groove;

a plurality of steps are formed on one side of the limiting boss back to the side wall of the diffusion groove, and each primary gas diffusion piece is abutted and limited on one step.

In an embodiment of the present invention, the bottom wall of the diffusion groove is provided with a plurality of air inlets communicating with the gas transmission cavity;

the centers of the air inlet holes are positioned on the same straight line;

and/or the apertures of a plurality of the air inlet holes are the same;

and/or the intervals among a plurality of the air inlet holes are equal.

In an embodiment of the present invention, the secondary gas diffusion member is provided with an opening communicating the diffusion groove and the diffusion chamber.

In an embodiment of the present invention, two opposite side walls of the opening are disposed in arc surfaces, and a maximum width of the opening is less than or equal to 10 mm.

In an embodiment of the invention, the thin film material deposition reaction apparatus is an atomic layer deposition reaction apparatus or a chemical vapor deposition apparatus.

According to the technical scheme, the diffusion groove is formed in the gas distribution table, the gas distribution table is provided with the gas transmission cavity, the primary gas diffusion piece is arranged in the diffusion groove, and the primary gas diffusion piece is used for diffusing gas entering the diffusion groove from the gas transmission cavity. In this way, when the gaseous precursor is supplied into the diffusion tank through the gas delivery chamber, the precursor will diffuse into the diffusion tank through the primary gas diffuser, so that a first re-diffusion of the precursor in the diffusion chamber is achieved through the primary gas diffuser. After the precursor entering the diffusion groove passes through the primary gas diffusion piece, the gas in the diffusion groove diffuses into the diffusion cavity through the secondary gas diffusion piece, so that the second diffusion of the precursor in the diffusion cavity is realized. The precursor becomes uniformly distributed gas after the double diffusion, so that when the precursor is contacted with the film material on the gas distribution table through the secondary diffusion piece, the precursor can be chemically adsorbed on the film material and quickly deposited into a deposition film with uniform thickness.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a thin film material deposition reaction apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of FIG. 1;

FIG. 3 is a schematic cross-sectional view of the diffusion cell of FIG. 1;

FIG. 4 is a schematic view of the primary gas diffuser element of FIG. 1;

FIG. 5 is a schematic view of the secondary gas diffuser of FIG. 1.

The reference numbers illustrate:

reference numerals	Name (R)	Reference numerals	Name (R)
				1	Gas distribution table	2	Primary gas diffusion member
11	Gas transmission cavity	21	Diffusion hole
				111	Air supply hole	22	Centralized gas supply area
12	Diffusion groove	3	Diffusion chamber
				121	Air intake	4	Secondary gas diffusion member
122	Spacing boss	41	Opening of the container

The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.

In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. Throughout this document, "and/or" is meant to include three juxtaposed aspects, exemplified by "A and/or B," including either the A aspect, or the B aspect, or both A and B. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

The invention provides a thin film material deposition reaction device, which is used for deposition reaction on the surface of a thin film material.

In an embodiment of the present invention, referring to fig. 1 in combination with fig. 2, the thin film material deposition reaction apparatus includes: the gas distribution table 1 comprises a gas transmission cavity 11 and a diffusion cavity 3, a plurality of diffusion grooves 12 arranged at intervals are arranged in the diffusion cavity 3, and each diffusion groove 12 is communicated with the gas transmission cavity 11;

the primary gas diffusion piece 2 is arranged in the diffusion groove 12, and the primary gas diffusion piece 2 is used for diffusing the gas entering the diffusion groove 12 from the gas transmission cavity 11; and

the secondary gas diffusion piece 4 is arranged at the notch of the diffusion groove 12, and the primary gas diffusion piece 2 is positioned between the secondary gas diffusion piece 4 and the communication position of the gas transmission cavity 11 and the diffusion cavity 3.

In the present embodiment, the gas distribution table 1 is used for conveying a film material and forming a deposition film on the surface of the film material by a chemical vapor reaction or an atomic deposition reaction. The gas distribution table 1 may be provided with a plurality of roller structures for conveying, so as to carry and convey the film material, and the film material in this embodiment may be a soft or hard material that is arbitrarily processed into a film sheet, which is not limited herein. The gas distribution table 1 is provided with a gas transmission cavity 11 and a diffusion cavity 3 which are oppositely arranged from top to bottom, the gas distribution table 1 can be opened with a through hole structure communicating the gas transmission cavity 11 with the diffusion cavity 3 so as to communicate the gas transmission cavity 11 with the diffusion cavity 3, and the bottom wall of the gas transmission cavity 11 can be opened with a diffusion groove 12.

The film passes through the slit of the diffusion tank 12 while being transported on the gas distribution table 1. The precursor or reactant can be introduced into the diffusion cell 12 through the gas delivery chamber 11 by supplying a gaseous precursor or reactant into the gas delivery chamber 11, which precursor or reactant can be diffused in the diffusion cell 12 by the primary diffuser and flow to the secondary diffuser, which diffuses the precursor or reactant further and flows into the diffusion chamber 3. The chemical property of the precursor or reactant is active, and the precursor or reactant passes through the notch of the diffusion groove 12 and is chemically adsorbed on the surface of the film material, so that an atom deposition layer is deposited on the surface of the film material, and the surface coating of the film material is realized. The primary and secondary diffusers may be mesh diffusers, batts, and the like, without limitation.

The scheme of the embodiment is that a diffusion groove 12 is arranged on a gas distribution table 1, the gas distribution table 1 is provided with a gas transmission cavity 11, a primary gas diffusion piece 2 is arranged in the diffusion groove 12, and the primary gas diffusion piece 2 is used for diffusing gas entering the diffusion groove 12 from the gas transmission cavity 11. In this way, when the gaseous precursor is supplied into the diffusion tank 12 through the gas delivery chamber 11, the precursor will diffuse into the diffusion tank 12 through the primary gas diffuser 2, so that a first re-diffusion of the precursor in the diffusion chamber 3 is achieved through the primary gas diffuser 2. After the precursor entering the diffusion tank 12 passes through the primary gas diffusion member 2, the gas in the diffusion tank 12 is diffused into the diffusion chamber 3 through the secondary gas diffusion member 4, so that the second diffusion of the precursor in the diffusion chamber 3 is realized. The precursor becomes uniformly distributed gas after the double diffusion, so that when the precursor is contacted with the film material on the gas distribution table 1 through the secondary diffusion piece, the precursor can be chemically adsorbed on the film material and quickly deposited into a deposition film with uniform thickness.

In the embodiment of the present invention, as shown in fig. 2, the primary gas diffuser 2 is flocculent (not shown);

or, the primary gas diffusion member 2 is a diffusion tube (not shown), the diffusion tube has an inner cavity, the diffusion tube is provided with a plurality of diffusion micropores communicating the diffusion groove 12 and the inner cavity, and the plurality of diffusion micropores are arranged at intervals;

or, the first-stage gas diffusion member 2 is a diffusion sheet (not shown), and the diffusion sheet is provided with a through hole which is arranged in a strip shape.

In this embodiment, the floccule may be cotton wool or the like, and the floccule has a plurality of small holes therein through which the gaseous precursor or reactant can pass, and the precursor or reactant in the diffusion chamber 3 can be diffused through the plurality of small holes.

The diffusion tube can be arranged on the side wall or the bottom wall of the diffusion groove 12 and is of a tubular structure, a plurality of diffusion micropores are formed in the diffusion tube and penetrate through the inner side wall and the outer side wall of the diffusion tube, so that the inner cavity of the diffusion tube can be communicated with the diffusion groove 12 through the diffusion micropores, and when a precursor or a reactant in the diffusion groove 12 penetrates through the diffusion micropores, the precursor or the reactant is diffused.

The diffusion sheet can be arranged on the side wall or the bottom wall of the diffusion groove 12, at least one strip-shaped hole is arranged on the diffusion sheet, and the precursor or reactant in the diffusion groove 12 is diffused when passing through the at least one strip-shaped hole.

In an embodiment of the present invention, as shown in fig. 3, the primary gas diffusion member 2 is a diffusion plate, the bottom wall of the diffusion groove 12 is provided with a gas inlet hole 121 communicated with the gas transmission cavity 11, the diffusion plate is formed with a concentrated gas supply region 22 corresponding to the gas inlet hole 121, and the concentrated gas supply region 22 is provided with a plurality of diffusion holes 21 therein;

the aperture of the plurality of diffusion holes 21 gradually increases from the center of the concentrated air supply region 22 to the periphery of the concentrated air supply region 22; and/or the distribution density of the plurality of diffusion holes 21 is gradually increased from the center of the concentrated gas supply area 22 to the periphery of the concentrated gas supply area 22.

In the embodiment, the concentrated gas supply region 22 is a region of the primary gas diffusion member 2 directly opposite to each gas inlet 121, when a gaseous precursor or reactant is supplied into the diffusion tank 12 through the gas inlet 121, the concentrated gas supply region 22 on the primary gas diffusion member 2 will be exposed to the precursor or reactant with higher concentration and faster flow rate, and the primary gas diffusion member 2 will be exposed to the precursor or reactant with lower concentration and slower flow rate due to the diffusion effect of the precursor or reactant at the edge of the concentrated gas supply region 22 or a portion far from the concentrated gas supply region 22.

By providing a plurality of diffusion holes 21 having a small diameter in the concentrated gas supply region 22, the amount of the precursor or the reactant passing through the diffusion holes 21 in the concentrated gas supply region 22 can be reduced, and by providing the diffusion holes 21 having a large diameter in the periphery of the concentrated gas supply region 22, the amount of the diffusion holes 21 passing through the periphery of the concentrated gas supply region 22 can be increased as appropriate, so that the precursor or the reactant is more uniformly dispersed to the notch of the diffusion vessel 12 after passing through the primary gas diffusion member 2, the precursor or the reactant is more uniformly brought into contact with the surface of the film material, and an atomic deposition film having a uniform thickness is formed on the surface of the film material.

By providing a plurality of diffusion holes 21 having a small distribution density in the concentrated gas supply region 22, the amount of the precursor or the reactant passing through the diffusion holes 21 in the concentrated gas supply region 22 can be reduced, and by providing a plurality of diffusion holes 21 having a large distribution density in the periphery of the concentrated gas supply region 22, the amount of the diffusion holes 21 passing through the periphery of the concentrated gas supply region 22 can be increased as appropriate, so that the precursor or the reactant is more uniformly dispersed to the notches of the diffusion grooves 12 after passing through the primary gas diffusion member 2, the precursor or the reactant is more uniformly brought into contact with the surface of the film material, and an atomic deposition film having a uniform thickness is formed on the surface of the film material.

In one embodiment of the present invention, the plurality of diffusion holes 21 are radially distributed from the center of the concentrated gas supply area 22 to the periphery of the concentrated gas supply area 22;

or, the plurality of diffusion holes 21 are sequentially arranged from the center of the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22, and the centers of the plurality of diffusion holes 21 may be sequentially connected to form a spiral ring.

In the present embodiment, the plurality of diffusion holes 21 are radially distributed from the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22; alternatively, when the plurality of diffusion holes 21 are arranged in sequence from the center of the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22, and the centers of the plurality of diffusion holes 21 may be connected in sequence to form a spiral ring, the diffusion holes 21 are gradually dispersed from the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22, the distribution density and pore diameter of the plurality of diffusion holes 21 located in the concentrated gas supply region 22 are small, and the distribution density and pore diameter of the plurality of diffusion holes 21 at the periphery of the concentrated gas supply region 22 are large, so that the amount of the precursor or reactant in the diffusion chamber 3 passing through the diffusion holes 21 in the concentrated gas supply region 22 is reduced, and the amount of the precursor or reactant in the diffusion chamber 3 passing through the diffusion holes 21 at the periphery of the concentrated gas supply region 22 is increased. In this way, the precursor or reactant is more uniformly dispersed to the notch of the diffusion tank 12 after passing through the primary gas diffusion member 2, and the precursor or reactant can more uniformly contact the surface of the film material to form an atomic deposition film with uniform thickness on the surface of the film material.

In an embodiment of the present invention, referring to fig. 4 in combination with fig. 3, the diffusion holes 21 are circular holes, and the diameter of the diffusion holes 21 is less than or equal to 10 mm.

In the present embodiment, since the precursor or reactant in the gaseous state passes through the diffusion holes 21, the flow rate and flow velocity of the precursor or reactant will be limited by the hole diameter of the diffusion holes 21. When the diameter of the diffusion hole 21 is too large, the unit flow rate of the precursor or the reactant through the diffusion port is too large, and the purpose of uniformly dispersing the precursor or the reactant cannot be achieved. When the diffusion taste circular holes are formed, the diameters of the diffusion holes 21 are smaller than or equal to millimeters, so that the precursor or the reactant can be divided by the sufficient number of diffusion holes 21, a more ideal diffusion effect is realized, and the precursor or the reactant can be uniformly diffused through the primary gas diffusion member 2.

In an embodiment of the present invention, referring to fig. 3 in combination with fig. 2, a limiting boss 122 is protruded from the bottom wall of the diffusion groove 12, and the primary gas diffusion member 2 abuts against and is limited by the limiting boss 122.

In this embodiment, the limiting boss 122 may be a ring-shaped protrusion structure provided on the bottom wall of the diffusion groove 12, or may include a plurality of protrusions protruding from the bottom wall of the diffusion groove 12. One-level gas diffusion piece 2 and spacing boss 122 are spacing in the one side butt of diffusion slot 12 diapire dorsad, and the periphery wall of one-level gas diffusion piece 2 and the lateral wall butt of diffusion slot 12 to support and spacing one-level gas diffusion piece 2 through spacing boss 122, so that one-level gas diffusion piece 2 is fixed and fixed in diffusion slot 12, guarantee the diffusion effect of one-level gas diffusion piece 2 to precursor or reactant. The primary gas diffusion piece 2 and the bottom wall of the diffusion groove 12 are enclosed to form a cavity, and a precursor or a reactant in the cavity can be diffused only through the diffusion holes 21 on the primary gas diffusion piece 2, so that the diffusion effect of the primary gas diffusion piece 2 on the precursor or the reactant is improved.

In an embodiment of the present invention, referring to fig. 3 in combination with fig. 2, the thin film material deposition reaction apparatus includes a plurality of primary gas diffusers 2, the plurality of primary gas diffusers 2 are sequentially disposed at intervals from the bottom wall of the diffusion tank 12 to the notch of the diffusion tank 12;

a plurality of steps are formed on one side of the limiting boss 122 back to the side wall of the diffusion groove 12, and each primary gas diffusion member 2 is abutted and limited on each step.

In the present embodiment, the plurality of primary gas diffusion members 2 are disposed in the diffusion tank 12, the plurality of primary gas diffusion members 2 are sequentially spaced from the bottom wall of the diffusion tank 12 to the opening of the diffusion tank 12, and the gaseous precursor or reactant entering the diffusion tank 12 from the gas inlet 121 can flow more uniformly to the opening of the diffusion tank 12 by multiple diffusion of the plurality of primary gas diffusion members 2, so as to form a uniform atomic deposition film on the surface of the film material.

Optionally, the upper surface of each step is parallel to the bottom wall of the diffusion groove 12, two ends of each primary gas diffusion member 2 are limited at each step, so that the primary gas diffusion members 2 are arranged parallel to the bottom wall of the diffusion groove 12, and the distances between the plurality of primary gas diffusion members 2 may be the same, so as to facilitate uniform diffusion of the gaseous precursor or reactant in the diffusion groove 12.

In an embodiment of the present invention, as shown in fig. 3, the bottom wall of the diffusion groove 12 is provided with a plurality of air inlets 121 communicating with the gas transmission chamber 11, and centers of the plurality of air inlets 121 are located on the same straight line;

and/or the apertures of the plurality of air inlet holes 121 are the same;

and/or the intervals between the plurality of air intake holes 121 are equal.

In the present embodiment, the plurality of gas inlet holes 121 may be linearly distributed, so that the gaseous precursor or reactant can be uniformly supplied into the diffusion tank 12 through the plurality of gas inlet holes 121.

It can be understood that, when the apertures of the plurality of gas inlet holes 121 are the same, the amount of the gaseous precursor or reactant passing through each gas inlet hole 111 per unit time is relatively fixed, so that the uniformity of supplying the gaseous precursor or reactant into the diffusion tank 12 through the plurality of gas inlet holes 121 can be improved.

It can be understood that, when the distances between the holes of the plurality of gas inlet holes 121 are equal, the plurality of gas inlet holes 121 are conveniently processed, and the plurality of gas inlet holes 121 are uniformly distributed on the bottom wall of the diffusion tank 12, so that the precursor or the reactant can be uniformly supplied to each part in the diffusion tank 12 through the plurality of gas inlet holes 121, and thus the uniformity of supplying the gaseous precursor or the reactant into the diffusion tank 12 through the plurality of gas inlet holes 121 can be improved.

In an embodiment of the present invention, referring to fig. 5 in combination with fig. 3, the secondary gas diffusion member 4 is provided with an opening 41 communicating the diffusion groove 12 and the diffusion chamber 3.

In this embodiment, the second-stage gas diffusion member 4 can cover the opening of the diffusion tank 12, two ends of the second-stage gas diffusion member 4 are respectively connected to two opposite side walls of the diffusion tank 12, the second-stage gas diffusion member 4 and the inner wall of the diffusion tank 12 enclose to form a cavity, the first-stage gas diffusion member 2 is located in the cavity, a gaseous precursor or reactant enters the diffusion tank 12 through the plurality of gas inlet holes 121, and the precursor or reactant is diffused and distributed to each position of the cavity under the action of the first-stage gas diffusion member 2. The secondary gas diffusion member 4 is provided with an opening 41 through which a precursor or a reactant can pass, and the precursor or the reactant can contact and react with the film material through the opening 41. The secondary gas diffusion piece 4 and the opening 41 on the secondary gas diffusion piece 4 are arranged, so that the precursor or reactant diffused to the notch of the diffusion groove 12 cannot flow away from the periphery of the notch of the diffusion groove 12 to the outside of the diffusion groove 12, the precursor or reactant is contacted with the film material through the opening 41, the contact time of the precursor or reactant and the film material can be prolonged as much as possible, the reaction of the precursor or reactant and the surface of the film material is more sufficient, the utilization rate of the precursor or reactant is favorably improved, and the waste of the precursor or reactant is avoided. Preferably, the opening 41 is opened in the middle of the secondary gas diffusion member 4, so as to further increase the contact time of the precursor or reactant with the film material, and to make the reaction between the precursor or reactant and the surface of the film material more sufficient.

In an embodiment of the present invention, referring to fig. 5 and shown in fig. 3, two opposite sidewalls of the opening 41 are disposed in a curved surface, and a maximum width of the opening 41 is less than or equal to a millimeter.

In this embodiment, if the width of the opening 41 is too large, a large amount of the precursor or the reactant will flow out of the diffusion tank 12 through the opening 41, and the effect of prolonging the contact time between the precursor or the reactant and the surface of the film material is not achieved. Therefore, the two opposite side walls of the opening 41 are set to be arc-shaped, so that the opening 41 gradually shrinks from the middle to the two ends along the length direction thereof, that is, the middle width of the opening 41 is the largest, more precursors or reactants can pass through, and the maximum width of the opening 41 is less than or equal to millimeters, and less precursors or reactants can pass through other parts of the opening 41, so as to prevent the precursors or reactants from flowing away from the secondary gas diffusion member 4 too fast through the opening 41, thereby further prolonging the contact time of the precursors or reactants and the film surface, and improving the sufficiency of the contact reaction of the precursors or reactants and the film surface.

In an embodiment of the present invention, as shown in fig. 1, the thin film material deposition reaction apparatus further includes a gas supply device (not shown in the drawings) connected to the gas supply hole 111, the gas supply device being configured to supply gas into the gas delivery chamber 11.

In this embodiment, the gas supply device may be a reaction device for preparing a gaseous precursor or a reactant, and the device has an interface for delivering the gaseous precursor or the reactant to the outside, and the interface is connected to the gas supply hole 111 through a pipeline, so that the gaseous precursor or the reactant can be continuously supplied into the gas transmission chamber 11 for performing an atomic deposition reaction with the film material to form an atomic deposition film on the surface of the film material.

In the present embodiment, the thin film material deposition reaction apparatus may form a deposition film layer on the thin film material through a chemical vapor deposition reaction or an atomic layer deposition reaction, and is not limited to only one of the methods. It is understood that the ald apparatus deposits an atomic layer on a thin film material by an ald reaction, and deposits a chemical layer on the thin film material by a cvd reaction.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims

1. A thin film material deposition reaction apparatus, comprising:

2. The thin film material deposition reaction apparatus as claimed in claim 1, wherein the primary gas diffuser is floccule;

3. The thin film material deposition reaction apparatus as claimed in claim 1, wherein the primary gas diffusion member is a diffusion plate, a bottom wall of the diffusion groove is provided with a gas inlet hole communicated with the gas transmission chamber, the diffusion plate is provided with a concentrated gas supply region corresponding to the gas inlet hole, and the concentrated gas supply region is provided with a plurality of diffusion holes;

4. The thin film material deposition reaction apparatus as claimed in claim 3, wherein the plurality of diffusion holes are radially distributed from a center of the concentrated gas supply area to a periphery of the concentrated gas supply area;

5. The thin film material deposition reaction device as claimed in any one of claims 1 to 4, wherein a limiting boss is protruded from a bottom wall of the diffusion groove, and the primary gas diffusion member abuts against and is limited by the limiting boss.

6. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 4, wherein the thin film material deposition reaction apparatus comprises a plurality of primary gas diffusers which are arranged at intervals in order from a bottom wall of the diffusion tank to a notch of the diffusion tank;

7. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 4, wherein a plurality of gas inlets communicating with the gas transmission chamber are opened at a bottom wall of the diffusion tank;

the centers of the air inlet holes are positioned on the same straight line;

and/or the apertures of a plurality of the air inlet holes are the same;

and/or the intervals among a plurality of the air inlet holes are equal.

8. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 4, wherein the secondary gas diffusion member is provided with an opening communicating the diffusion groove and the diffusion chamber.

9. The thin film material deposition reaction apparatus as claimed in claim 8, wherein the two opposite sidewalls of the opening are disposed in arc shapes, and a maximum width of the opening is less than or equal to 10 mm.

10. The thin film material deposition reaction apparatus as claimed in claim 1, wherein the thin film material deposition reaction apparatus is an atomic layer deposition reaction apparatus or a chemical vapor deposition apparatus.