CN111421393A - L CD target side polishing process - Google Patents
L CD target side polishing process Download PDFInfo
- Publication number
- CN111421393A CN111421393A CN202010242843.8A CN202010242843A CN111421393A CN 111421393 A CN111421393 A CN 111421393A CN 202010242843 A CN202010242843 A CN 202010242843A CN 111421393 A CN111421393 A CN 111421393A
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- target
- polishing
- machine tool
- polishing process
- grinding head
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a L CD target side polishing process, which comprises the steps of fixing a L CD target, fixing a grinding head on a machine tool, driving the grinding head to drive by the machine tool, and polishing the side of the L CD target.
Description
Technical Field
The invention relates to the technical field of polishing processes, in particular to a L CD target side polishing process.
Background
At present, a liquid crystal display (L CD) technology is widely applied to life, and a plurality of L CD products are produced by domestic manufacturers, however, a L CD target material used for production still needs to be imported, an automatic processing method of the L CD target material is also mastered in hands of other people, particularly, a surface treatment technology of a L CD target material, the processing progress of personnel is slow, and the quality is difficult to obtain a stable guarantee.
CN110606666A discloses an industrial control L CD display panel coating process and a cleaning method thereof, which comprises air hole blocking, surface treatment, polishing, cleaning, drying and coating, wherein the residual liquid crystal in a liquid crystal display screen is removed in the coating process, so that the coating effect is prevented from being influenced, the plate coating process, the cleaning method and the treatment process are sequentially carried out without mutual interference, and the imaging of the liquid crystal screen is not influenced.
CN110877235A discloses a polishing treatment method for the surface of a target backing plate, which comprises the steps of placing a target assembly upside down in a magnetic polishing device, and performing magnetic polishing treatment with the target backing plate facing upwards, wherein the polishing efficiency is high, the polished lines on the surface of the target backing plate after polishing are uniform and disordered, the target backing plate is not easy to rust, and rust and burrs in holes in the target backing plate can be removed completely, so that the requirement of sputtering the target backing plate is well met, and the method has high industrial application value. The polishing method is used for polishing the surface of the back plate of the target, but the polishing effect on the side surface of the target is poor, and the stability of the roughness is poor.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide the L CD target side polishing process, which improves the processing efficiency of polishing the side of the L CD target, has the single processing time of about 20-40 minutes, stabilizes the roughness at 2.5-3.5 microns and ensures the stability of the quality.
In order to achieve the purpose, the invention adopts the following technical scheme:
a polishing process for the side face of L CD target comprises the steps of fixing a L CD target, fixing a grinding head on a machine tool, and driving the grinding head to perform transmission by the machine tool so as to polish the side face of L CD target.
According to the L CD target side polishing process, the grinding head is adopted to polish the side face of the L CD target, foreign matters, oxides and non-target integrated substances on the side face can be thoroughly removed, the roughness of the polished side face is stabilized to be 2.5-3.5 mu m, the quality stability is guaranteed, the processing efficiency of L CD target side polishing is improved, and the single processing time is about 20-40 minutes.
Wherein, the grinding head is an alumina grinding head (brown corundum grinding head), the alumina grinding head is adopted for polishing, and the selectable grinding head types can also be replaced by silicon carbide and scouring pad. The silicon carbide grinding head is hard in material, so that a product cannot be well attached in the grinding process, the roughness controllability of a ground finished product is low, the fluctuation is large, and the removal effect on oxides and impurities is poor.
Wherein, the specification of the aluminum oxide grinding head is 120# or 180 #.
Wherein the feeding speed of the machine tool is 1000-3000 mm/min, for example, the feeding speed of the machine tool is 1000mm/min, 1500mm/min, 2000mm/min, 2500mm/min, 3000 mm/min. If the feeding speed is too low and is lower than 1000mm/min, the roughness controllability is reduced, the roughness value is increased to be about 3-5 mu m, the product quality requirement is not met, and the efficiency is reduced along with the increase; if the feeding speed is too high and is higher than 3000mm/min, the removal of the oxide and foreign matters on the side surface is not complete.
Wherein the rotating speed of the machine tool is 500-1500 mm/min, for example, the rotating speed of the machine tool is 500mm/min, 600mm/min, 700mm/min, 800mm/min, 900mm/min, 1000mm/min, 1100mm/min, 1200mm/min, 1300mm/min, 1400mm/min, 1500 mm/min. If the rotating speed of the machine tool is too low and is lower than 500mm/min, oxides and foreign matters on the side surface of the product are not completely removed, and rework is caused; if the rotating speed of the machine tool is too high and is higher than 1500mm/min, the polished side surface has disordered lines and uncontrollable roughness.
Wherein the polishing time is 20-40 min, for example, the polishing time is 20min, 25min, 30min, 35min, 40 min.
Wherein, the L CD target material is aluminum or copper.
Wherein, the L CD target is a L CD plane target.
The L CD target is a split L CD plane target, and preferably, the split L CD plane target is one of G6, G8.5, G10.5 or G11 split L CD plane targets.
According to the preferred scheme, the L CD target side polishing process comprises the steps of fixing a L CD target, fixing an alumina grinding head on a machine tool, driving the grinding head by the machine tool to carry out transmission, and polishing the side face of the L CD target, wherein the feeding speed of the machine tool is 1000-3000 mm/min, the rotating speed of the machine tool is 500-1500 mm/min, and the polishing time is 20-40 min.
Compared with the prior art, the invention has the beneficial effects that:
according to the L CD target side polishing process, the machine tool parameters are adjusted and appropriate grinding materials are adopted, automatic production and manufacturing are fully utilized, so that the target processing speed is increased, the single processing time is about 20-40 minutes, the roughness is stabilized at 2.5-3.5 microns, and the quality stability is guaranteed.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments.
Unless otherwise specified, various starting materials of the present invention are commercially available or prepared according to conventional methods in the art.
Example 1
The L CD target side polishing process comprises the following steps of fixing a L CD aluminum target, fixing an alumina grinding head with the specification of 180# on a machine tool, driving the grinding head by the machine tool to carry out transmission, and polishing the side of the L CD target, wherein the feeding speed of the machine tool is 2000mm/min, the rotating speed of the machine tool is 1000mm/min, and the polishing time is 30 min.
The L CD target of the present embodiment is a split-type G6L CD planar aluminum target.
Example 2
The L CD target side polishing process comprises the following steps of fixing a L CD aluminum target, fixing an aluminum oxide grinding head with the specification of 120# on a machine tool, driving the grinding head by the machine tool to carry out transmission, and polishing the side of the L CD target, wherein the feeding speed of the machine tool is 2000mm/min, the rotating speed of the machine tool is 1000mm/min, and the polishing time is 30 min.
The L CD target of the present embodiment is a split-type G6L CD planar aluminum target.
Example 3
The L CD target side polishing process comprises the following steps of fixing a L CD aluminum target, fixing an alumina grinding head with the specification of 180# on a machine tool, driving the grinding head by the machine tool to carry out transmission, and polishing the side of the L CD target, wherein the feeding speed of the machine tool is 1000mm/min, the rotating speed of the machine tool is 500mm/min, and the polishing time is 40 min.
The L CD target of the present embodiment is a split-type G6L CD planar aluminum target.
Example 4
The L CD target side polishing process comprises the following steps of fixing a L CD aluminum target, fixing an alumina grinding head with the specification of 180# on a machine tool, driving the grinding head by the machine tool to carry out transmission, and polishing the side of the L CD target, wherein the feeding speed of the machine tool is 3000mm/min, the rotating speed of the machine tool is 1500mm/min, and the polishing time is 20 min.
The L CD target of the present embodiment is a split-type G6L CD planar aluminum target.
Example 5
The difference between this example and example 2 is that the L CD target is a L CD planar copper target, which is otherwise the same as example 2.
Example 6
The present embodiment is different from embodiment 1 in that the polishing head is a scouring pad, and the rest is the same as embodiment 1.
Example 7
This embodiment is different from embodiment 1 in that the feed rate of the machine tool is 500mm/min, and the others are the same as those of embodiment 1.
Example 8
This embodiment is different from embodiment 1 in that the feed rate of the machine tool is 5000mm/min, and the others are the same as those of embodiment 1.
Example 9
The present embodiment is different from embodiment 1 in that the rotational speed of the machine tool is 100mm/min, and the rest is the same as embodiment 1.
Example 10
This example is different from example 1 in that the rotational speed of the machine tool is 3000mm/min, and the others are the same as those in example 1.
Comparative example 1
This comparative example differs from example 1 in that polishing was carried out using a conventional polishing machine, using a pneumatic disk polishing machine in combination with a back-fluff sand paper.
In operation, because the polishing machine generates a certain thickness, the oxide at the bottom of the product is not completely removed, and because the polishing machine is held by a person to polish from the side, grains on the side surface after polishing are disordered, and subsequent manual polishing is needed.
Comparative example 2
The difference between the comparative example and the example 1 is that the manual polishing is adopted, and the specific process is as follows:
the personnel are handheld with No. 120 and No. 180 back fine sand paper for polishing, wherein, because of personnel's manual operation, the interference factor is more, the product quality is inconsistent, and the roughness controllability is low.
The side surfaces of the L CD targets obtained after polishing in examples 1-10 and comparative examples 1-2 were tested for roughness, and the results are shown in Table 1.
The roughness test standard is that a roughness detector of SJ-210 type is used for detecting Ra value.
TABLE 1
As can be seen from Table 1, the polishing process for the lateral surface of the L CD target material has the advantages that the roughness of the lateral surface of the L CD target material after polishing is stabilized at 2.5-3.5 mu m, the stability of the quality is good, the processing speed of the target material is increased, and the single-piece processing time is about 20-40 minutes.
Examples 1-5 and 6 show that the grinding head made of other materials (scouring pad) has fluctuation influence on the grinding efficiency and the roughness stability of the product.
Examples 7 and 8 show that too low or too high a feed rate of the machine tool results in uncontrollable roughness and incomplete surface oxide removal, which affects the machining effect, and that too low a feed rate also affects the machining efficiency.
Examples 9 and 10 show that if the machine speed is too low or too high, the roughness is not controlled or damage is caused to the surface of the product.
The comparative example 1 adopts a conventional polishing machine for polishing, the roughness is 2.5-3.5, but the operation time is long, the requirement cannot be met through single operation, and manual polishing is required.
Comparative example 2 manual polishing, long time, required 70min, roughness of 2-4 μm.
The comparison shows that the polishing process can improve the stability of the product quality, greatly save the time, ensure the single processing time to be about 20 to 40 minutes and the roughness to be stabilized at 2.5 to 3.5 microns and ensure the stability of the quality.
The present invention is illustrated by the above-mentioned examples, but the present invention is not limited to the above-mentioned detailed process equipment and process flow, i.e. it is not meant to imply that the present invention must rely on the above-mentioned detailed process equipment and process flow to be practiced. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (10)
1. A L CD target side polishing process is characterized in that the polishing process comprises the steps of fixing a L CD target, fixing a grinding head on a machine tool, and driving the grinding head to drive by the machine tool to polish the side of the L CD target.
2. The polishing process of claim 1, wherein the grinding head is an alumina grinding head.
3. The polishing process of claim 2, wherein the alumina grinding head has a specification of 120# or 180 #.
4. A polishing process according to any one of claims 1 to 3, characterized in that the feed rate of the machine tool is 1000 to 3000 mm/min.
5. The polishing process according to any one of claims 1 to 4, wherein the machine tool is rotated at a speed of 500 to 1500 mm/min.
6. The polishing process according to any one of claims 1 to 5, wherein the polishing time is 20 to 40 min.
7. The polishing process of any one of claims 1-6, wherein the L CD target material is aluminum or copper.
8. The polishing process of any one of claims 1-7, wherein the L CD target is a L CD planar target.
9. The polishing process of any one of claims 1-8, wherein the L CD target is a split L CD planar target;
preferably, the split L CD planar target is one of G6, G8.5, G10.5 or G11 split L CD planar targets.
10. The polishing process of any one of claims 1 to 9, wherein the L CD target is fixed, the alumina grinding head is fixed on a machine tool, the machine tool drives the grinding head to drive, and the side surface of the L CD target is polished, the feeding speed of the machine tool is 1000-3000 mm/min, the rotating speed of the machine tool is 500-1500 mm/min, and the polishing time is 20-40 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010242843.8A CN111421393A (en) | 2020-03-31 | 2020-03-31 | L CD target side polishing process |
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| CN202010242843.8A CN111421393A (en) | 2020-03-31 | 2020-03-31 | L CD target side polishing process |
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| CN111421393A true CN111421393A (en) | 2020-07-17 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111975465A (en) * | 2020-08-14 | 2020-11-24 | 合肥江丰电子材料有限公司 | Polishing process of molybdenum target sputtering surface |
| CN113021166A (en) * | 2021-03-31 | 2021-06-25 | 合肥江丰电子材料有限公司 | Automatic polishing device for side edge of target and using method thereof |
| CN113231893A (en) * | 2021-04-23 | 2021-08-10 | 先导薄膜材料（广东）有限公司 | Polishing and cleaning method of ITO target |
| CN113275951A (en) * | 2021-05-26 | 2021-08-20 | 芜湖映日科技股份有限公司 | ITO (indium tin oxide) rotary target material surface preparation process |
| CN114589586A (en) * | 2022-03-21 | 2022-06-07 | 武汉江丰电子材料有限公司 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
| CN114770228A (en) * | 2022-04-15 | 2022-07-22 | 广东江丰电子材料有限公司 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
| CN115256058A (en) * | 2022-08-01 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Machining method of silicon carbide target |
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| WO2004002679A1 (en) * | 2002-06-27 | 2004-01-08 | Bausch & Lomb Incorporated | Apparatus and method for target polishing intraocular lenses |
| CN201239917Y (en) * | 2008-05-30 | 2009-05-20 | 青岛理工大学 | Polishing device of grinding machine |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111975465A (en) * | 2020-08-14 | 2020-11-24 | 合肥江丰电子材料有限公司 | Polishing process of molybdenum target sputtering surface |
| CN113021166A (en) * | 2021-03-31 | 2021-06-25 | 合肥江丰电子材料有限公司 | Automatic polishing device for side edge of target and using method thereof |
| CN113231893A (en) * | 2021-04-23 | 2021-08-10 | 先导薄膜材料（广东）有限公司 | Polishing and cleaning method of ITO target |
| CN113275951A (en) * | 2021-05-26 | 2021-08-20 | 芜湖映日科技股份有限公司 | ITO (indium tin oxide) rotary target material surface preparation process |
| CN114589586A (en) * | 2022-03-21 | 2022-06-07 | 武汉江丰电子材料有限公司 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
| CN114770228A (en) * | 2022-04-15 | 2022-07-22 | 广东江丰电子材料有限公司 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
| CN114770228B (en) * | 2022-04-15 | 2024-05-14 | 广东江丰电子材料有限公司 | Polishing treatment method for side edge of LCD target material |
| CN115256058A (en) * | 2022-08-01 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Machining method of silicon carbide target |
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