CN111416006B - Two-dimensional layered perovskite ferroelectric multifunctional film and preparation process thereof - Google Patents
Two-dimensional layered perovskite ferroelectric multifunctional film and preparation process thereof Download PDFInfo
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Abstract
The invention belongs to the field of condensed physical and functional thin films and nanotechnology, and relates to a two-dimensional layered perovskite ferroelectric multifunctional thin film and a preparation process thereof. What is needed isThe molecular formula of the two-dimensional layered perovskite ferroelectric multifunctional film is as follows: yBi2Ox‑BiMeO3Wherein x is more than or equal to 2 and less than or equal to 4; y is more than or equal to 1 and less than or equal to 4; me is a transition metal. Perovskite-like structure Bi2OxAnd perovskite structure BiMeO3The crystal structure of (2) is similar and the lattice constants are matched, and the structure has a stable tetragonal-like super cell structure. The preparation process comprises the following steps: firstly, preparing a precursor solution with the molar concentration of 0.1-0.4M and the ratio of Bi to Me of 1-6; spin coating, drying, pyrolyzing and annealing to obtain the two-dimensional layered perovskite ferroelectric multifunctional film. The invention adopts crystal structure design and sol-gel synthesis method to develop new structure film, the components of the precursor liquid are accurate and controllable, the synthesis condition is simple, and finally the high quality ferroelectric film with excellent performance is obtained.
Description
Technical Field
The invention belongs to the field of condensed physical and functional thin films and nanotechnology, and particularly relates to a two-dimensional layered perovskite ferroelectric multifunctional thin film and a preparation process thereof.
Background
Whether ferroelectric materials can maintain their ferroelectricity in a low dimension has been a scientific issue of great interest. The theory of phenomenological phenomena in the 80's of the 20 th century suggests that the polarization capability of ferroelectric materials gradually diminishes or even disappears in the direction of size reduction as the size decreases and gradually changes from three-dimensional to two-dimensional. The size effect is caused by the appearance of induced charges on the surface of the material, so that a depolarization field is generated, the polarization characteristic of the material is weakened, and ferroelectricity is generally considered to disappear below 100 nm. In order to break through this life-threatening problem, scientists strive to find substances that still exhibit ferroelectricity in two-dimensional systems. In 1998, Bune et al (A.V. Bune, V.M. Fridkin, S. Ducharme, et al. Two-dimensional dielectric filters [ J]Nature, 1998, 391(6670): 874-877.) found that a film of a high molecular polymer of vinylidene fluoride and trifluoroethylene can maintain ferroelectricity even at a thickness of 1 nm (2 units cell), which has attracted a great deal of attention in the academic world. By the last decade, with the development of nanoscience and advanced technology, indirect experimental evidence has been demonstrated at BaTiO3And PbTiO3When the size of the classical system is as small as 2-3 unit cells, ferroelectricity still exists. In recent years, a batch of two-dimensional new ferroelectric systems, such as hydroxylated graphene, SnTe and CuInP, are emerged through the modification and cutting of two-dimensional materials and the design of new structures2S6、In2Se3、WTe2And the like. One of the key academic problems in the leading-edge field of material disciplines such as ferroelectric function and the like is how to improve the effective combination with microelectronics and improve the performance guarantee, and the atomic-level thickness of the two-dimensional ferroelectric material can greatly improve the integration level in the microelectronic application; meanwhile, many two-dimensional systems are high-mobility semiconductors per se; and a Van der Waals interface is formed on the surface of a substrate circuit such as silicon, and high-quality materials can be formed without lattice matching during preparation. Therefore, the research and development of a novel two-dimensional ferroelectric material is expected to become a new field of material discipline.
It is known that, among perovskite structure materials, a layered perovskite-like system is a two-dimensional structure type material, and has been widely noticed due to its excellent fatigue properties and ferroelectric properties, such as SrBi2Ta2O9And Bi4Ti3O12And the like. However, such systems have a large anisotropy, exhibiting a principal component of polarization in the in-plane direction, whereas microelectronic integration is predominantly in the out-of-plane direction, which affects the reliability of their applications. In recent years, through soluble Sr3Al2O6The introduction of the transition layer realizes the preparation of self-supporting oxide perovskite [ D. Lu, D.J. Baek, S.S. Hong, et al. Synthesis of free standing single-crystal-perovskite filters and catalysts by of cracking of crystalline water-soluble layers [ J. Lu, D.J. Baek, S.S. Hong]. Nature materials, 2016, 15(12): 1255.]Even in 2019, researchers obtained SrTiO of single unit cell layer3And BiFeO3BiFeO of self-supporting two-dimensional layer and self-supporting two-dimensional film in 2-3 unit cells3In this way, a large out-of-plane iron polarization and tetragonal axial ratio [ D.Ji, S.Cai, T.R.Paudel, et al, freestyling crystaline oxide peroxides down to the soloyer limit [ J.]. Nature, 2019, 570(7759): 87.]. Such a self-supportingThe realization of supported two-dimensional oxide perovskites not only demonstrates that the oxide perovskite ferroelectrics can maintain polarization in the out-of-plane direction at low dimensions, but also the self-support of the thin film provides more design and tailoring possibilities. However, the preparation of the two-dimensional perovskite ferroelectric material needs an advanced physical preparation method, and the process is complex and is not easy to popularize industrially.
In summary, the two-dimensional ferroelectric material is a bottleneck in the application from the confirmation of the two-dimensional ferroelectric material to the difficulty in adjusting the polarization direction and then to the difficulty in developing a reliable process. Therefore, the novel two-dimensional ferroelectric material with the out-of-plane controllable ferroelectric polarization characteristic is obtained through the structural design, and the preparation of the novel two-dimensional ferroelectric material is realized by adopting a simple method, which is particularly important for the micro-electronics era
The sol-gel method (sol-gel) for preparing the film is one of solution deposition methods (CSD), and because the components of the precursor liquid are controllable, the film is easy to be doped and modified by A or B site replacement, in addition, the film synthesized by the sol-gel method has uniform components, can also be used for preparing a multilayer composite film, and has controllable thickness; the film making equipment is simple, the vacuum condition is not needed, the raw material source is wide, and the cost is low; the chemical reaction is easy to carry out, and the synthesis temperature is low; and the uniformity of molecular level can be realized in the precursor liquid at the initial stage of the film preparation so as to obtain the fine structure of target micrometer and even nanometer scale.
Disclosure of Invention
The invention discloses a two-dimensional layered perovskite ferroelectric multifunctional thin film and a preparation process thereof, which aim to solve any one of the above and other potential problems in the prior art.
The technical scheme of the invention is as follows: a two-dimensional layered perovskite ferroelectric multifunctional thin film, the molecular formula of the ferroelectric thin film is as follows:yBi2O x -BiMeO3wherein, 2 is less than or equal tox≤4；1≤y≤4；MeIs a transition metal.
Further, the two-dimensional layered perovskite ferroelectric multifunctional film is of a layered alternate distribution structure, the structure is a quasi-tetragonal phase structure, the value range of lattice constants a and b is 0.30-0.45 nm, and the value range of c is 0.80-1.00 nm.
The invention also aims to provide a process for preparing the two-dimensional layered perovskite ferroelectric multifunctional thin film, which specifically comprises the following steps:
s1) preparing a precursor solution;
s2) spin-coating the precursor solution obtained in S1) on a substrate to obtain an amorphous film structure;
s3) annealing the amorphous film structure obtained in S2), and cooling the amorphous film structure to room temperature in air to obtain the perovskite photoelectric film with the target thickness.
Further, the specific steps of S1) are:
s1.1) adding bismuth salt into a solvent, and uniformly stirring to obtain a mixed solution;
s1.2) adding a transition metal salt into the mixed solution obtained in S1.1), uniformly stirring, adding a chelating agent to obtain a precursor solution with the molar concentration of 0.1-0.4M, and standing for more than 24 hours for sufficient hydrolysis and polycondensation.
Further, the specific process of S2) is as follows:
s2.1) filtering the precursor solution obtained in the S1.2) to remove large particles for later use;
s2.2) selecting a substrate, cleaning, preheating and placing on a spin coating instrument;
s2.3) uniformly spin-coating the precursor solution processed by the S2.1) on the substrate processed by the S2.2), drying, and then pyrolyzing to obtain the amorphous film structure.
Further, the specific steps of S3) are:
s3.1) placing the amorphous film structure obtained in S2.3) in an annealing furnace for rapid temperature rise,
s3.2) heating to 450-650 ℃, preserving heat for 15-30 min, and cooling to room temperature in air to obtain the two-dimensional layered perovskite ferroelectric multifunctional film.
Further, the transition metal is a salt of the transition metal, and the addition amount is as follows: the molar ratio of the bismuth salt to the transition metal salt is 1-6: 1.
further, the solvent is ethylene glycol monomethyl ether; the chelating agent is glacial acetic acid
The nitrate of the transition metal comprises ferric nitrate nonahydrate, cobalt nitrate hexahydrate or nickel nitrate hexahydrate;
further, the diameter of the filter head for filtering in S2.1) is 0.20-0.25 μm;
the preheating of the substrate is as follows: preheating on a heating plate at 80-100 deg.C for 1-4 min;
the rotation speed of the spin coating in the S2.2) is 3000-6000rpm, and the spin coating time is 25-35S;
the drying process comprises the following steps: drying at 80-100 deg.C for 8-12 min;
the pyrolysis temperature is 260 ℃ and 280 ℃, and the pyrolysis time is 2-6 min.
Further, the rate of rapid temperature rise in the S3.1) is 150 ℃/S.
Furthermore, the thickness of the perovskite photoelectric thin film is controllable and can be controlled to be 10-100 nm; and the ferroelectric piezoelectric performance is excellent, and the piezoelectric coefficient is as high as 100-200 pm/V, which is comparable with the performance of other classical ferroelectric piezoelectric films.
The invention has the beneficial technical effects that:
1) the components of the precursor liquid are accurate and controllable, the uniformity of the molecular level is realized, and the components of the film are uniform and have high quality;
2) the film making equipment is simple, the vacuum condition is not needed, the cost is lower, and the film thickness and the preparation temperature are controllable;
3) a series of new structural films with various different components can be realized by changing B-site transition metal ions.
Ferroelectric piezoelectric and the like are excellent in multifunctionality.
Drawings
FIG. 1 is a synthesis route diagram of a two-dimensional layered perovskite ferroelectric multifunctional thin film of the present invention.
FIG. 2 is a structural diagram of a two-dimensional layered perovskite ferroelectric thin film prepared by the process of the present invention.
FIG. 3 is a drawing showingAThe cation is Bi3+The B site ion being Co3+(BSC) or Ni3+XRD junction of novel two-dimensional ferroelectric thin film of (BSN)And (4) structural representation schematic diagram.
FIG. 4 is a schematic diagram showing the XRD structure characterization of the novel two-dimensional ferroelectric thin film obtained at different annealing temperatures.
FIG. 5 is a schematic diagram of the ferroelectric piezoelectric property curve of the two-dimensional layered perovskite ferroelectric multifunctional thin film prepared by the process of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
On the contrary, the invention is intended to cover alternatives, modifications, equivalents and alternatives which may be included within the spirit and scope of the invention as defined by the appended claims. Furthermore, in the following detailed description of the present invention, certain specific details are set forth in order to provide a better understanding of the present invention. It will be apparent to one skilled in the art that the present invention may be practiced without these specific details.
The invention relates to a two-dimensional layered perovskite ferroelectric multifunctional film, which has the molecular formula as follows:yBi2O x -BiMeO3wherein, 2 is less than or equal tox≤4；1≤y≤4；MeIs a transition metal, y is Bi2OxThe number of the cells.
The two-dimensional layered perovskite ferroelectric multifunctional film is of a layered alternate distribution structure, the structure is a quasi-tetragonal phase structure, the value ranges of lattice constants a and b are 0.30-0.45 nm, and the value range of c is 0.80-1.00 nm.
As shown in FIG. 1, the preparation process of the two-dimensional layered perovskite ferroelectric multifunctional thin film comprises the following steps:
s1) preparing a precursor solution;
s2) spin-coating the precursor solution obtained in S1) on a substrate to obtain an amorphous film structure;
s3) annealing the amorphous film structure obtained in S2), and cooling the amorphous film structure to room temperature in air to obtain the two-dimensional layered perovskite ferroelectric multifunctional film.
Further, the specific steps of S1) are:
s1.1) adding bismuth nitrate pentahydrate into a solvent, and uniformly stirring to obtain a mixed solution;
s1.2) adding nitrate of transition metal into the mixed solution obtained in S1.1), stirring uniformly, adding a chelating agent to obtain a precursor solution with the molar concentration of 0.1-0.4M, and standing for more than 24 hours for sufficient hydrolysis and polycondensation.
Further, the specific process of S2) is as follows:
s2.1) filtering the precursor solution obtained in the S1.2) to remove large particles for later use;
s2.2) selecting a substrate, cleaning, preheating and placing on a spin coating instrument;
s2.3) uniformly spin-coating the precursor solution processed by the S2.1 on the substrate processed by the S2.2), drying, and then pyrolyzing to obtain the amorphous film structure.
Further, the specific steps of S3) are:
s3.1) placing the amorphous film structure obtained in S2.3 in an annealing furnace for rapid temperature rise,
s3.2) heating to 450-650 ℃, preserving heat for 15-30 min, and cooling to room temperature in air to obtain the two-dimensional layered perovskite ferroelectric multifunctional film.
Further, the transition metal is a salt of the transition metal, and the addition amount is as follows: the molar ratio of the bismuth salt to the transition metal salt is 1-6: 1.
further, the solvent is ethylene glycol monomethyl ether; the chelating agent is glacial acetic acid
Further, the diameter of the filter head for filtering in S2.1) is 0.20-0.25 μm;
the preheating of the substrate is as follows: preheating on a heating plate at 80-100 deg.C for 1-4 min;
the rotation speed of the spin coating in the S2.2) is 3000-6000rpm, and the spin coating time is 25-35S;
the drying process comprises the following steps: drying at 80-100 deg.C for 8-12 min;
the pyrolysis temperature is 260 ℃ and 280 ℃, and the pyrolysis time is 2-6 min.
The rate of rapid temperature rise in said S3.1) is 150 ℃/S.
The thickness of the perovskite photoelectric film is controllable and can be controlled to be 10-100 nm; and the ferroelectric piezoelectric performance is excellent, and the piezoelectric coefficient is as high as 100-200 pm/V, which is comparable with the performance of other classical ferroelectric piezoelectric films.
The principle of the invention is as follows:
the perovskite-like structure Bi in the two-dimensional layered perovskite ferroelectric multifunctional film2O x And perovskite structure BiMeO3（Me: ni, Co, Fe, etc.) have similar crystal structures and lattice constants are matched, thereby designingyBi2O x -BiMeO3（Me: ni, Co, Fe, etc.) this bismuth oxide and perovskite layered alternately distributed supercell structure. On the basis of matching of a crystal result and a lattice constant, a stable new structural phase is verified and formed by utilizing first-nature principle calculation. The software adopted is VASP software (version 5.4.1.24Jun 15), and the principle is a density functional theory. As shown in the right side of fig. 1, atoms were set at positions of the perovskite structure, and a calculation model was established with 10 unit cells as supercells. The atomic position and lattice vector are then relaxed until the forces on the atoms and the stresses on the unit cell are zero, while minimizing the energy, resulting in a stable tetragonal-like structure, as shown in fig. 2. Ni, Co and Fe and the mixed system were calculated respectively, and the specific calculation results and structural parameters are shown in Table 1. The results show that it has a lattice constantaAndcsubstantially around 0.38-0.39 nm and 0.90-0.93 nm, and gradually increasing the radius of B site ioncThe value also increases.
TABLE 1 calculation results and structural parameters
Example 1
Adding bismuth nitrate pentahydrate (Bi (NO)3)3·5H2O) 7mL of Ethylene Glycol Methyl Ether (EGME) was added. Then adding cobalt nitrate hexahydrate (Co (NO) into the mixed solution3)3·6H2O) or nickel nitrate hexahydrate (Ni (NO)3)3·6H2O). The preparation chemical formula is: bi2O x -BiCoO3And Bi2O x -BiNiO3I.e. Bi andMein a molar ratio of 3: 1, and the molar concentration is 10mL of the precursor solution with 0.25M. Spin coating a thin film on a single crystal substrate. Preheating a substrate on a heating plate at 90 ℃ for 2min, quickly transferring to a spin coater, sucking a proper amount of precursor solution by using a liquid-transferring gun, dropwise adding the precursor solution on the substrate, fully covering the surface of the substrate, and spin-coating for 30s at the rotating speed of 5000 rpm; transferring the substrate to a heating plate at 90 ℃ for drying for 10 min; rapidly heating to 270 deg.C, baking for 4 min; finally, the mixture is moved into an annealing furnace to be rapidly heated and annealed at the temperature of 450-650 ℃ for 30 min; annealing to obtain ferroelectric films with different compositions.
XRD analysis is carried out on the prepared film to obtain an image shown in figure 3 (BSN is B position Ni, BSC is B position Co, both A positions are Bi), the highest peak is the peak of the substrate, and the rest peaks are the peaks of the same crystal face of the film, which indicates that the film forms an epitaxial novel two-dimensional layered perovskite film, the lattice constant of the single cell of the film is about 0.92 nm and is similar to the calculation result.
Example 2
Adding bismuth nitrate pentahydrate (Bi (NO)3)3·5H2O) 7mL of Ethylene Glycol Methyl Ether (EGME) was added. Then adding cobalt nitrate hexahydrate (Co (NO) into the mixed solution3)3·6H2O) has a chemical formula: bi2O x -BiCoO3And 10mL of precursor solution with the molar concentration of 0.4M. Spin coating a thin film on a single crystal substrate. Preheating a substrate on a heating plate at 90 ℃ for 2min, quickly transferring to a spin coater, sucking a proper amount of precursor solution by using a liquid-transferring gun, dropwise adding the precursor solution on the substrate, fully covering the surface of the substrate, and spin-coating for 30s at the rotating speed of 4000 rpm; transferring the substrate to a heating plate at 90 ℃ for drying for 10 min; rapidly heating to 270 deg.C, baking for 4 min; finally, the prepared substrate is divided into three groups,annealing at 500 deg.C, 560 deg.C, 600 deg.C for 30 min; obtaining the ferroelectric multifunctional film under different annealing temperatures.
XRD analysis is carried out on the prepared film, curves at different annealing temperatures shown in figure 4 are drawn, and the preparation of the film is realized at the temperatures.
Example 3
Adding bismuth nitrate pentahydrate (Bi (NO)3)3·5H2O) 7mL of Ethylene Glycol Methyl Ether (EGME) was added. Then adding cobalt nitrate hexahydrate (Co (NO) into the mixed solution3)3·6H2O) has a chemical formula: bi2O x -BiCoO3And 10mL of precursor solution with the molar concentration of 0.25M. Spin coating a thin film on a single crystal substrate. Preheating a substrate on a heating plate at 90 ℃ for 2min, quickly transferring to a spin coater, sucking a proper amount of precursor solution by using a liquid-transferring gun, dropwise adding the precursor solution on the substrate, fully covering the surface of the substrate, and spin-coating for 30s at the rotating speed of 5000 rpm; transferring the substrate to a heating plate at 90 ℃ for drying for 10 min; rapidly heating to 270 deg.C, baking for 4 min; finally dividing the prepared substrate into three groups, and annealing at 500 ℃ for 20min respectively; obtaining the ferroelectric multifunctional film under different annealing temperatures. The ferroelectric piezoelectric properties of the thin film were analyzed.
As shown in fig. 5, the local signal diagram of the piezoelectric atomic force microscope (PFM) of the ferroelectric thin film with new structure prepared by the previous steps is shown. The phase of the strain rod presents an obvious electric hysteresis loop shape, the amplitude presents an obvious butterfly curve shape, and under the condition that the voltage is 5V, the strain of 600 pm is achieved. Therefore, the effective piezoelectric coefficient can reach 120 pm/V, and the new structure film has good ferroelectric piezoelectric performance.
The two-dimensional layered perovskite ferroelectric multifunctional thin film and the preparation process thereof provided by the embodiment of the application are described in detail above. The above description of the embodiments is only for the purpose of helping to understand the method of the present application and its core ideas; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
As used in the specification and claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, and a person skilled in the art can solve the technical problem within a certain error range to substantially achieve the technical effect. The description which follows is a preferred embodiment of the present application, but is made for the purpose of illustrating the general principles of the application and not for the purpose of limiting the scope of the application. The protection scope of the present application shall be subject to the definitions of the appended claims.
It is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a good or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such good or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a commodity or system that includes the element.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
The foregoing description shows and describes several preferred embodiments of the present application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the application as described herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.
Claims (9)
1. A two-dimensional layered perovskite ferroelectric multifunctional thin film is characterized in that the molecular formula of the two-dimensional layered perovskite ferroelectric multifunctional thin film is as follows:yBi2O x -BiMeO3wherein, 2 is less than or equal tox≤4；1≤y≤4；MeIs a transition group metal;
the two-dimensional layered perovskite ferroelectric multifunctional film is of a layered alternately distributed structure which is a quasi-tetragonal phase structure and has a lattice constantaAndbthe value range of (A) is 0.30-0.45 nm,cthe value range of (A) is 0.80-1.00 nm.
2. A process for preparing a ferroelectric thin film as defined in claim 1, characterized in that the process comprises the following steps:
s1) preparing a precursor solution, wherein the molar ratio of bismuth to transition metal is 1-6: 1;
s2) attaching the precursor solution obtained in the step S1) to a substrate in a spin coating mode to obtain an amorphous film structure;
s3) annealing the amorphous film structure obtained in S2), and cooling the amorphous film structure to room temperature in air to obtain the two-dimensional layered perovskite ferroelectric multifunctional film.
3. The process as claimed in claim 2, wherein the specific steps of S1) are:
s1.1) adding bismuth salt into a solvent, and uniformly stirring to obtain a mixed solution;
s1.2) adding a transition metal salt into the mixed solution obtained in S1.1), uniformly stirring, adding a chelating agent to obtain a precursor solution with the molar concentration of 0.1-0.4M, and standing for more than 24 hours for sufficient hydrolysis and polycondensation.
4. The process as claimed in claim 3, wherein the specific process of S2) is as follows:
s2.1) filtering the precursor solution obtained in the S1.2) to remove large particles for later use;
s2.2) selecting a substrate, cleaning, preheating and placing on a spin coating instrument;
s2.3) uniformly spin-coating the precursor solution processed by the S2.1) on the substrate processed by the S2.2), drying, and then pyrolyzing to obtain the amorphous film structure.
5. The process as claimed in claim 4, wherein the specific steps of S3) are as follows:
s3.1) placing the amorphous film structure obtained in S2.3) in an annealing furnace for rapid temperature rise,
s3.2) heating to 450-650 ℃, preserving heat for 15-30 min, and cooling to room temperature in air to obtain the two-dimensional layered perovskite ferroelectric multifunctional film.
6. The process of claim 2, wherein the transition group metal is a transition group metal salt.
7. The process according to claim 4, wherein the diameter of the filter head for filtration in S2.1) is 0.20-0.25 μm;
the preheating of the substrate is as follows: preheating on a heating plate at 80-100 deg.C for 1-4 min;
the rotation speed of the spin coating in the S2.2) is 3000-6000rpm, and the spin coating time is 25-35S;
the drying process comprises the following steps: drying at 80-100 deg.C for 8-12 min;
the pyrolysis temperature is 260 ℃ and 280 ℃, and the pyrolysis time is 2-6 min.
8. The process of claim 5, wherein the rate of rapid temperature increase in S3.1) is 150 ℃/S.
9. The process according to claim 2, wherein the thickness of the two-dimensional layered perovskite ferroelectric multifunctional thin film is 10-100 nm; the piezoelectric coefficient is as high as 100-200 pm/V.
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