CN111398370A - Dielectric test system and method for micro-nano-sized patterned film array - Google Patents
Dielectric test system and method for micro-nano-sized patterned film array Download PDFInfo
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Abstract
The invention relates to a dielectric test system for a micro-nano patterned film array, which comprises: a test unit for testing dielectric properties; the device comprises an insulating sample table, wherein a first sample table electrode and a second sample table electrode are arranged on the sample table; the first sample stage electrode and the second sample stage electrode are respectively and electrically connected with the test unit; first and second electrodes in parallel; the first electrode is electrically connected with the first sample stage electrode, and the second electrode is electrically connected with the second sample stage electrode; the micro-nano patterned film array is clamped between the first electrode and the second electrode; the testing fixture comprises an insulating testing fixture and is positioned on a sample table, a sample groove used for placing a first electrode, a second electrode and a micro-nano-sized patterned film array is formed in the testing fixture, the testing fixture is detachably connected with an insulating fastening unit, and one end of the fastening unit is positioned in the sample groove and used for pressurizing the first electrode.
Description
Technical Field
The invention relates to the field of dielectric test devices for miniature films, in particular to a dielectric test system and method for a micro-nano patterned film array.
Background
The dielectric property of the material is usually tested in different temperature and electromagnetic field environments by using instruments such as a network analyzer, an impedance analyzer, an L CR meter and the like and matching with a specific sample test fixture according to the type of a sample.
The magneto-dielectric property test of thin film materials is generally similar to the dielectric property test. The existing mature dielectric test fixture can basically meet the test requirements of samples with larger sizes, including film samples with larger plane scale and thickness in micro-nano scale. With the miniaturization of device size, the application of micro dot-shaped thin film units and patterned arrays thereof in devices is becoming more and more widespread. However, for the dielectric and magneto-dielectric performance test of the patterned thin film array with the plane size below the micrometer scale, the current effective test means are limited.
At present, the method for testing the dielectric property of a bulk material or a thin film material with larger plane size comprises the following steps: after plating an electrode on the surface of a sample, placing the sample on a test fixture (usually, a single-layer or multi-layer metal electrode such as Pt or Au is used), directly connecting a conductive metal wire from the surface of the sample electrode by using methods such as silver paste or welding and the like, connecting the conductive metal wire with a test connecting wire, and finally testing the dielectric property by using a test instrument. However, the method cannot test the dielectric and magneto-dielectric properties of the patterned thin film array with the plane size lower than the micrometer scale, because the diameter of the conductive metal wire (Pt, Au and other metals) used in the general electrical test is generally larger than 20 micrometers, while the size of the patterned thin film with the micro-nanometer scale is too small, and the size of the conductive metal wire is generally larger than the plane area of a single micro-nanometer scale thin film unit, the conductive metal wire cannot be accurately welded on the surface of the sample electrode. In addition, due to the size limitation of the conductive metal wire, when the conductive metal wire is adhered by the silver colloid, the silver colloid is very easy to cover the area outside the thin film sample electrode and directly contacts with the thin film of the substrate or the non-testing area, so that large interface defects and loss are generated, the signal of the micro-nano thin film sample is weak, and the loss generated at the interface can generate great testing noise, so that the testing result is seriously influenced. In the PCB sample stage widely used in the test process, the copper electrodes are connected by the PCB, so that a very small equivalent dielectric capacitor can be formed with the PCB. Therefore, a new test apparatus and method must be developed to meet the related needs.
Aiming at the micro-nano scale graphical thin film array, the current feasible testing method is a nano probe method. The method is to contact a patterned thin film unit by utilizing a nanoscale probe, and then apply a voltage test feedback signal on the probe. The method can test the nano film with a very small scale and has certain precision. But for the large-area densely arranged patterned thin film array, the test efficiency of the probe method is very low; meanwhile, the probe method test process needs to be matched with a nanoscale high-precision displacement device, so that the equipment is expensive, the operation process is complex, and the test cost is very high. In addition, the addition of an adjustable magnetic field, a temperature-changing system and the like in the existing probe system can obviously increase the complexity of the test system and further increase the test cost. The subsequent data processing process of the probe method test also needs professional software, and the data processing process is complex.
The chinese patent with application number 201510047190.7 discloses a stripline resonator anchor clamps for stripline method dielectric property test, adopts the fixed stripline resonator of upper and lower clamp splice of mutually supporting, and its test principle belongs to the stripline method, and it is applicable to great size material, need be full of the space around the stripline with measured dielectric material during the test, can't test micro-nano size medium and the graphical array that have fixed geometric structure. The application number 201510047386.6 discloses a strip line method dielectric property test system, the test principle belongs to a strip line method, the strip line method is suitable for large-size materials, the tested medium materials need to be filled in the space around the strip line during testing, and micro-nano-sized media with fixed geometric structures and graphical arrays thereof cannot be tested. The application number is 201721136238.2's chinese patent discloses a two electrode fixture device for insulating material sample dielectric property test, adopt limit structure adjusting electrode board fixed plate form sample, need 4 at least groups spacing screw nut and 4 groups fixed screw nut, its device volume is great, the roughness of upper and lower plate electrode has not passed through special optimization, only be applicable to the great continuous plate form sample of test area, the micro-nano size medium of the weak electric signal of unable accurate test, and be unfavorable for exerting test conditions such as magnetic field, temperature.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide a dielectric test system and a method for a micro-nano patterned film array.
The invention discloses a dielectric test system for a micro-nano patterned film array, which comprises:
a test unit for testing dielectric properties;
the device comprises an insulating sample table, wherein a first sample table electrode and a second sample table electrode are arranged on the sample table; the first sample stage electrode and the second sample stage electrode are respectively and electrically connected with the test unit;
the first electrode and the second electrode are arranged in parallel relatively, and the micro roughness RMS of the first electrode is less than 1 nm; the first electrode is electrically connected with the first sample stage electrode, and the second electrode is electrically connected with the second sample stage electrode; the micro-nano patterned film array is clamped between the first electrode and the second electrode;
the testing fixture comprises an insulating testing fixture and a clamping unit, wherein the testing fixture is positioned on a sample platform, a sample groove used for placing a first electrode, a second electrode and a micro-nano-sized patterned film array is formed in the testing fixture, the testing fixture is detachably connected with the insulating clamping unit, one end of the clamping unit is positioned in the sample groove and used for pressurizing the first electrode so that the first electrode, the micro-nano-sized patterned film array and the second electrode are in close contact with each other.
The sample platform used in the traditional electrical performance test method is generally a printed electrode on a PCB (printed Circuit Board), in order to reduce the influence of the weak dielectric efficiency of the PCB on test data, the invention uses an insulating material as the sample platform, and the material of the sample platform can be Al2O3、SrTiO3And MgO and the like.
And plating a first sample stage electrode and a second sample stage electrode on the surface of the sample stage by using a vacuum coating method (such as magnetron sputtering and the like). The first sample stage electrode and the second sample stage electrode can be metal electrodes such as Pt and Au.
Preferably, the first sample stage electrode and the second sample stage electrode are in an i shape and are respectively located on two sides of the test fixture clamped with the micro-nano patterned thin film array. Two ends of the first sample stage electrode are respectively connected with one ends of the first electrode and the test unit, and two ends of the second sample stage electrode are respectively connected with the other ends of the second electrode and the test unit.
Furthermore, the first electrode is arranged on the first electrode plate, the first electrode plate is made of insulating materials, and the microroughness RMS of the first electrode plate is less than 0.5 nm. Since the first electrode needs to be in good contact with the whole micro-nano patterned thin film array, an insulating substrate with high surface flatness (RMS less than 0.5nm) and high mechanical strength (such as polished Al cleaned by plasma) needs to be selected2O3Substrate, SrTiO3And MgO, etc.). Then, a metal electrode (such as Pt, Au and the like) with a certain thickness is plated on the surface of the substrate by using a vacuum plating method (such as magnetron sputtering and the like), and when the flatness of the metal electrode meets a certain requirement, the metal electrode can form good contact with the whole micro-nano patterned film array, and has very small interface loss and interface capacitance.
The vacuum coating equipment can be used for preparing electrodes on the surfaces of the first electrode plate and the sample stage in a large scale, and the cost is relatively low.
Furthermore, the first electrode and the second electrode are respectively positioned above and below the micro-nano patterned thin film array.
Further, the second electrode selects materials according to the micro-nano patterned film array preparation conditions. The material needs to have good conductivity, high temperature resistance and convenience for growing a test micro-nano array sample on the upper surface of the material.
Furthermore, a threaded through hole is formed in the test fixture, the fastening unit penetrates through the threaded through hole, and one end, located in the sample cell, of the fastening unit is in close contact with the first electrode plate.
Further, the fastening unit is a bolt.
Because the micro-nano patterned thin film array has small total volume and light weight, the first electrode is difficult to be tightly attached to the surface of the sample under the action of pure gravity, and in an actual test, the sample may not be completely horizontally placed according to the requirements of external conditions such as the direction of an external magnetic field, the illumination angle and the like, so that the sample and the electrode need to be pressed by using a test fixture to be in tight contact. In order to avoid the interference of induced current generated by components in the test fixture in the test environment such as a magnetic field and the like on the test model, materials (such as quartz, various low-temperature-resistant plastics and the like) which are highly insulated and have a wider use temperature range and are not easy to deform are selected.
Preferably, the test fixture is integrated into one piece and needs to have a smaller volume, wherein the sample slot is a through hole which is through, the sample slot is provided with two relatively parallel and smooth side faces, the second electrode is placed on one of the side faces, the micro-nano-sized patterned film array and the first electrode are sequentially placed above the second electrode, the other side face is provided with a through threaded through hole, and a fastening unit is arranged in the threaded through hole in a penetrating manner.
Further, the test fixture is fixed on the surface of the sample table horizontally, vertically or at a certain included angle.
Furthermore, a part of the first electrode and a part of the second electrode are respectively positioned outside the sample groove and are respectively and electrically connected with the first sample stage electrode and the second sample stage electrode.
Furthermore, the micro-nano patterned film array comprises a conductive substrate and a plurality of array units which are positioned on the conductive substrate and distributed at intervals, the thickness of the micro-nano patterned film array is 5 nanometers to 20 micrometers, and the diameter of each array unit is larger than 5 nanometers.
Furthermore, the first electrode and the second electrode are respectively and electrically connected with the first sample stage electrode and the second sample stage electrode through conductive metal wires; the conductive wire has a diameter greater than 10 microns.
Further, according to the required test parameters, a proper test instrument is selected as a test unit.
The invention also discloses application of the dielectric test system in testing the dielectric property and/or the magnetic dielectric property of the micro-nano patterned film array.
The invention also discloses a method for testing the dielectric property and/or the magnetic dielectric property of the micro-nano patterned film array, which is carried out by adopting the dielectric testing system provided by the invention and comprises the following steps:
placing a first electrode and a second electrode which are clamped with a micro-nano patterned film array in a sample groove of a test fixture, and then pressurizing the first electrode by using a fastening unit so that the first electrode, the micro-nano patterned film array and the second electrode are in close contact with each other; placing the test fixture on a sample table;
electrically connecting two positions of a first sample table electrode on the sample table with one end of the first electrode and one end of the test unit respectively, and electrically connecting two positions of a second sample table electrode on the sample table with the other end of the second electrode and the other end of the test unit respectively; and testing the dielectric property and/or the magnetic dielectric property of the micro-nano patterned film array by using the testing unit.
Furthermore, a part of the first electrode and a part of the second electrode are respectively positioned outside the sample groove and are respectively and electrically connected with the first sample stage electrode and the second sample stage electrode.
Further, the test fixture is fixed on the surface of the sample table horizontally, vertically or at a certain included angle.
By the scheme, the invention at least has the following advantages:
the dielectric test system reduces the difficulty of connecting the conducting wire with the electrode, uses the first electrode and the second electrode to clamp the sample to be tested, only needs to be directly connected with the first electrode and the second electrode through the conducting wire, does not need to be directly connected with the sample to be tested, is simple to operate, avoids loss and noise generated by connecting the sample to be tested with the conducting metal wire, can effectively test the micro-nano patterned film array sample in the dense arrangement, and obtains dielectric performance parameters through fitting and calculation.
The sample table disclosed by the invention is made of insulating materials, the resistivity of the sample table is extremely high, the influence of equivalent capacitance in the sample table on the test is greatly reduced, and the materials are usually not magnetic and have high hardness and heat-resistant and low-temperature-resistant performances, so that the stability of a test system cannot be influenced when test conditions such as a magnetic field and temperature are changed.
The test fixture is made of a material with high insulation and a large use temperature range, so that the influence of induced current on the test is avoided; the size of the clamp can be flexibly designed and prepared according to the test requirement of the sample, and the using method is simple.
The dielectric test system can cover large-area densely-arranged micro-nano-sized film unit array samples, required accessories can be prepared in large batches at low cost, and dielectric information of the samples is calculated through model fitting.
The dielectric test method of the invention has simple operation method, can quickly test the sample, and can not pollute the sample when the lead is connected with the electrode. The test fixture can be flexibly matched with other measuring instruments to apply adjustable conditions of magnetic field, temperature, illumination and the like to a sample to perform multifunctional dielectric test. After the micro-nano patterned film array is subjected to performance test, equivalent dielectric and magneto-dielectric performance parameters can be obtained through simple model fitting calculation.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following description is made with reference to the preferred embodiments of the present invention and the accompanying detailed drawings.
Drawings
FIG. 1 is a schematic diagram of the configuration of a dielectric test system of the present invention;
FIG. 2 is a schematic view of the surface structure of the sample stage;
FIG. 3 is a schematic structural view of the first electrode plate;
FIG. 4 is a schematic structural view of a test fixture;
FIG. 5 is a schematic view of the actual mounting structure of the test fixture;
FIG. 6 is a curve showing the variation of capacitance and dielectric loss of the patterned film array of the BFSO/Nb-STO micro-nano size with the frequency of an electric field, which is measured by the dielectric testing system of the present invention;
FIG. 7 is a photo of a BFSO/Nb-STO micro-nano-sized patterned thin film array tested by the dielectric testing system of the present invention;
description of reference numerals:
1-a test unit; 3-a sample stage; 4-conductive wire; 5-testing the clamp; 6-micro nano-sized patterned film array; 10-high frequency test line; 20-a first electrode plate; 21-a first electrode; 22-a second electrode; 30-a sample placement area; 31-a second sample stage electrode; 32-a first sample stage electrode; 50-a sample cell; 51-a threaded through hole; 52-a fastening unit; 310-a second test line connection end; 311-second electrode connection end; 320-a first test line connection end; 321-first electrode connection end.
Detailed Description
The following examples are given to further illustrate the embodiments of the present invention. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Example 1
Referring to fig. 1, a dielectric test system for micro-nano patterned thin film array according to a preferred embodiment of the present invention includes: the dielectric property testing device comprises a testing unit 1 for testing dielectric properties, an insulating sample table 3, a first electrode 21 and a second electrode 22 which are arranged in parallel relatively and an insulating testing clamp 5, wherein the micro-nano patterned thin film array 6 is clamped between the first electrode 21 and the second electrode 22, and the first electrode 21 and the second electrode 22 are respectively positioned above and below the micro-nano patterned thin film array 6.
According to the required test parameters, a suitable test instrument is selected as the test unit 1.
In order to reduce the influence of the weak dielectric effect of the sample stage 3 on the test data, the invention uses a high-insulating material (such as Al)2O3) As the sample stage 3, metal electrodes (e.g., Pt, Au, etc.) are plated at two places on the surface of the sample stage 3, respectively, using a vacuum plating method (e.g., magnetron sputtering, etc.) to form a first sample stage electrode 32 and a second sample stage electrode 31 which are disposed at intervals. Specifically, in the vacuum plating, a metal sheet is used to prepare a mask plate used in the electrode plating on the surface of the sample stage 3, the metal mask plate is used to cover the surface of the sample stage 3, and a metal electrode (e.g., Pt, Au, etc.) with a certain thickness is plated by a vacuum plating method (e.g., magnetron sputtering, etc.). As shown in fig. 2, a first sample stage electrode 32 and a second sample stage electrode 31 in an i shape are formed on the sample stage 3, a sample placing area 30 is reserved in the middle of the first sample stage electrode 32, and the first sample stage electrode 32 includes a first test line connecting end 320 and a first electrode connecting end 321; the second sample stage electrode 31 includes a second test line connection terminal 310 and a second electrode connection terminal 311. The first test line connection end 320 and the second test line connection end 310 may be welded with the terminals or directly connected to both ends of the test unit 1 through the high frequency test line 10, respectively. The first and second electrode connection terminals 321 and 311 may be connected to the first and second electrodes 21 and 22, respectively, by soldering a post or directly via the conductive wire 4.
The first electrode 21 serves as an upper electrode, the second electrode 22 serves as a lower electrode, the first electrode 21 is disposed on the first electrode plate 20, and the first electrode plate 20 has high flatness and high mechanical strength. The high-flatness upper electrode plate (fig. 3) has the function of enabling the first electrode 21 on the surface of the high-flatness upper electrode plate to be in good contact with the micro-nano metal electrode on the upper surface of the micro-nano patterned thin film array 6. The conductive wire 4 connected to the first electrode 21 can be connected to the first electrode connection end 321 in fig. 2, so that the difficulty in accurately connecting the micro-nano thin unit electrode to the sample stage 3 electrode is greatly reduced. The conductive wire 4 may be a platinum wire having a diameter of 50 μm.
Because the first electrode 21 needs to form good contact with the whole micro-nano patterned thin film array 6Therefore, it is desirable to select an insulating substrate having a highly flat surface (RMS of less than 0.5nm) and high mechanical strength (e.g., plasma-cleaned polished Al2O3A substrate). Then, a metal electrode (such as Pt and Au) with a certain thickness is plated on the surface of the substrate by using a vacuum plating method (such as magnetron sputtering and the like), namely the first electrode 21, and when the flatness of the metal electrode meets a certain requirement, the metal electrode can be in good contact with all the micro-nano patterned thin film arrays 6, and the micro-nano patterned thin film arrays have very small interface loss and interface capacitance. Therefore, the method is suitable for testing the dielectric property of the micro-nano patterned film array 6 and the dielectric property of the micro-nano film unit vertical to the surface.
Because the micro-nano patterned thin film unit array has small total volume and light weight, the electrode plate is difficult to be tightly attached to the metal electrode on the surface of the sample under the action of pure gravity, and in an actual test, the sample may not be completely horizontally placed according to the requirements of external conditions such as the direction of an external magnetic field, the illumination angle and the like, so that the sample and the electrode plate need to be pressed by the test fixture 5 to be in tight contact. The test fixture 5 is an integrated piece and needs to have a smaller volume, the test fixture 5 is located on the sample table 3, the test fixture 5 is provided with a sample groove 50 for placing the first electrode 21, the second electrode 22 and the micro-nano patterned film array 6, the test fixture 5 is detachably connected with an insulating fastening unit 52, one end of the fastening unit 52 is located in the sample groove 50 and used for pressurizing the first electrode 21 so that the first electrode 21, the micro-nano patterned film array 6 and the second electrode 22 are in close contact with each other. The test fixture 5 is provided with a threaded through hole 51, the fastening unit 52 penetrates through the threaded through hole 51, and one end of the fastening unit 52 located in the sample cell 50 is in close contact with the first electrode plate 20. Preferably, the fastening unit 52 is a bolt. The sample tank 50 is a through hole, the sample tank 50 has two parallel and flat sides, the second electrode 22 is placed on one side, the micro-nano patterned thin film array 6 and the first electrode 21 are sequentially placed above the second electrode 22, a through threaded through hole 51 is formed in the other side, and a fastening unit 52 penetrates through the threaded through hole 51.
In order to avoid the test fixture 5 and the fastening unit 52 therein from generating induced current to interfere with the test model under the test environments such as magnetic field, the whole test fixture 5 is made of a material (such as quartz, various low temperature resistant plastics, etc.) which is highly insulating and has a wider use temperature range and is not easy to deform.
Fig. 4(a) (b) (c) (d) are a top view, a front view, a perspective view, and a right side view of the test fixture 5 in this order. According to the size of the actual test sample, the size parameters of the fastener can be adjusted: the width d of the sample groove 50, the height c of the test fixture 5 and the width a (the area of the sample is 0.25 cm)2≤S≤25cm2) And a fastening unit 52 of an appropriate diameter is selected according to the actual lattice distribution (screw specification: M1-M8); the diameter D of the threaded through hole 51 and the length b of the test fixture 5 are adjusted according to the thickness of the sample (h is more than or equal to 0.02cm and less than or equal to 0.2cm when the sample is adapted).
The first electrode 21 is used as a conductive medium between the conductive metal wire 4 and the electrode on the micro-nano patterned film array 6, when the micro-nano patterned film array 6 is used, the electrode on the micro-nano patterned film array 6 is opposite to the first electrode 21 on the first electrode plate 20, the second electrode 22 is arranged below the micro-nano patterned film array 6, the three are placed in the sample tank 50, and a part of the first electrode 21 and a part of the second electrode 22 are respectively positioned outside the sample tank 50. The fastening unit 52 is slowly screwed into the threaded through hole 51 (it is necessary to ensure that the surface of the end of the fastening unit 52 contacting the first electrode plate 20 is flat and the stress is uniform) until the head of the fastening unit 52 is attached to the back of the upper electrode plate and has a certain resistance, thereby completing the sample installation (see fig. 5). Then, the first electrode 21 and the second electrode 22 exposed outside the sample cell 50 are connected to the first electrode connection terminal 321 and the second electrode connection terminal 311, respectively, via the conductive wire 4.
According to the specific requirements of the test, the test fixture 5 is horizontally or vertically fixed on the surface of the sample table 3 or fixed at a certain included angle. After the connection is finished, the dielectric property test is carried out by using the test unit 1, and the required graphs and parameters are obtained through fitting calculation of a dielectric correlation formula after the test is finished.
Example 2
A method for testing the dielectric property and/or the magnetic dielectric property of a micro-nano patterned film array is carried out by adopting the dielectric testing system of embodiment 1 of the invention, and comprises the following steps:
placing a first electrode 21 and a second electrode 22 clamped with a micro-nano patterned film array 6 in a sample groove 50 of a test fixture 5, and then pressurizing the first electrode 21 by using a fastening unit 52 so that the first electrode 21, the micro-nano patterned film array 6 and the second electrode 22 are in close contact with each other; placing the test fixture 5 on the sample table 3;
electrically connecting two positions of a first sample platform electrode 32 on the sample platform 3 with the first electrode 21 and one end of the test unit 1 respectively, and electrically connecting two positions of a second sample platform electrode 31 on the sample platform 3 with the second electrode 22 and the other end of the test unit 1 respectively; and the dielectric property and/or the magnetic dielectric property of the micro-nano patterned thin film array 6 are/is tested by using the test unit 1.
In this embodiment, the micro-nano patterned thin film array 6 of the sample to be measured is BaFe10.2Sc1.8O19/Nb:SrTiO3(BFSO/Nb: STO) array, wherein Nb: SrTiO3The substrate is a niobium-doped strontium titanate substrate, has good conductivity and is an ideal conductive substrate; a plurality of BaFe are uniformly distributed on the conductive substrate10.2Sc1.8O19Array, BaFe10.2Sc1.8O19In the form of a circle with a diameter of 300 μm and a thickness of 100nm (as shown in the white dot portion of fig. 7). BaFe10.2Sc1.8O19Is a magnetic ferrite, and the dielectric property can be changed to a certain extent under the action of an external magnetic field.
In the test process, the insulating sample table 3 is plasma-cleaned Al2O3Two Pt electrodes are prepared on the surface of the sample platform by magnetron sputtering to be respectively used as a first sample platform 3 electrode and a second sample platform 3 electrode, and the first electrode plate 20 is polished Al2O3A Pt electrode was prepared by magnetron sputtering on the surface thereof as a first electrode 21, and a conductive wire 4 used was a platinum wire having a diameter of 50 μm.
By adopting the test system and the test method, the change curve of the sample capacitance and the dielectric loss along with the change of the electric field frequency is obtained through the test, and the result is shown in fig. 6a and b. FIG. 6a and B are respectively a BFSO/Nb-STO micro-nano-sized patterned film array capacitance variation curve with electric field frequency and a dielectric loss variation curve with electric field frequency, and in FIG. 6, the test conditions are as follows: temperature T300K, voltage U0.2V, H0T, and d 100 nm. The results of fig. 6 show that the test system and the fixture have feasibility and reliability, and the test purpose is achieved.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A dielectric test system for micro-nano-sized patterned thin film arrays, comprising:
a test unit (1) for testing dielectric properties;
the device comprises an insulated sample table (3), wherein a first sample table electrode (32) and a second sample table electrode (31) are arranged on the sample table (3); the first sample stage electrode (32) and the second sample stage electrode (31) are respectively electrically connected with the test unit (1);
a first electrode (21) and a second electrode (22) which are arranged in parallel relatively, wherein the micro roughness RMS of the first electrode (21) is less than 1 nm; the first electrode (21) is electrically connected to the first sample stage electrode (32), and the second electrode (22) is electrically connected to the second sample stage electrode (31); the micro-nano patterned thin film array (6) is clamped between the first electrode (21) and the second electrode (22);
insulating test fixture (5), it is located on sample platform (3), test fixture (5) are offered and are used for placing sample cell (50) of first electrode (21), second electrode (22) and micro-nano size graphical thin film array (6), test fixture (5) can be dismantled and be connected with insulating fastening unit (52), the one end of fastening unit (52) is located in sample cell (50) and be used for right first electrode (21) pressurization is so that first electrode (21), micro-nano size graphical thin film array (6) and second electrode (22) be in close contact with between two liang.
2. The dielectric test system of claim 1, wherein: the first electrode (21) is arranged on the first electrode plate (20), the first electrode plate (20) is made of insulating materials, and the micro-roughness RMS of the first electrode plate (20) is less than 0.5 nm.
3. A dielectric test system according to claim 2, wherein: the test fixture (5) is provided with a threaded through hole (51), the fastening unit (52) penetrates through the threaded through hole (51), and one end, located in the sample groove (50), of the fastening unit (52) is in close contact with the first electrode plate (20).
4. The dielectric test system of claim 1, wherein: the fastening unit (52) is a bolt.
5. The dielectric test system of claim 1, wherein: and parts of the first electrode (21) and the second electrode (22) are respectively positioned outside the sample groove (50) and are respectively and electrically connected with the first sample stage electrode (32) and the second sample stage electrode (31).
6. The dielectric test system of claim 1, wherein: the micro-nano patterned film array (6) comprises a conductive substrate and a plurality of array units which are located on the conductive substrate and distributed at intervals, the thickness of the micro-nano patterned film array (6) is 5 nanometers to 20 micrometers, and the diameter of each array unit is larger than 5 nanometers.
7. The dielectric test system of claim 1, wherein: the first electrode (21) and the second electrode (22) are respectively and electrically connected with the first sample stage electrode (32) and the second sample stage electrode (31) through conductive metal wires (4); the diameter of the conductive metal wire (4) is more than 10 microns.
8. Use of the dielectric test system of any one of claims 1-7 for testing the dielectric and/or magnetodielectric properties of micro-nano sized patterned thin film arrays.
9. A method for testing the dielectric property and/or the magneto-dielectric property of a micro-nano patterned film array, which is characterized in that the dielectric testing system of any one of claims 1-7 is adopted, and the method comprises the following steps:
a first electrode (21) and a second electrode (22) which are clamped with the micro-nano patterned film array (6) are placed in a sample groove (50) of the test fixture (5), and then the first electrode (21) is pressurized by using the fastening unit (52) so that the first electrode (21), the micro-nano patterned film array (6) and the second electrode (22) are in close contact with each other; placing the test fixture (5) on the sample table (3);
two positions of a first sample platform electrode (32) on the sample platform (3) are respectively and electrically connected with the first electrode (21) and one end of the test unit (1), and two positions of a second sample platform electrode (31) on the sample platform (3) are respectively and electrically connected with the second electrode (22) and the other end of the test unit (1); and testing the dielectric property and/or the magnetic dielectric property of the micro-nano patterned thin film array (6) by using the testing unit (1).
10. The method of claim 9, wherein: and parts of the first electrode (21) and the second electrode (22) are respectively positioned outside the sample groove (50) and are respectively and electrically connected with the first sample stage electrode (32) and the second sample stage electrode (31).
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| PCT/CN2020/103402 WO2021196453A1 (en) | 2020-04-01 | 2020-07-22 | Dielectric test system and method for micro-nano patterned thin film array |
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