CN111384662B - Directly-modulated laser drive circuit and directly-modulated laser system - Google Patents

Directly-modulated laser drive circuit and directly-modulated laser system Download PDF

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CN111384662B
CN111384662B CN201811620040.0A CN201811620040A CN111384662B CN 111384662 B CN111384662 B CN 111384662B CN 201811620040 A CN201811620040 A CN 201811620040A CN 111384662 B CN111384662 B CN 111384662B
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module
transistor
current
servo loop
terminal
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CN111384662A (en
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王昕�
向涛
劳之豪
袁亚兴
商松泉
刘德昂
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Aluksen Optoelectronics Co ltd
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Aluksen Optoelectronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A direct-modulated laser driving circuit is externally connected with a first input signal and a second input signal and connected with a power supply and a laser diode, and comprises a current modulation module, a neutralization module with neutralization capacitors capable of independently setting parameters, a direct current bias module, a first anti-interference module and a second anti-interference module, wherein the direct-modulated laser driving circuit eliminates asymmetric bias caused by laser diode loads and a driving circuit by adopting different independent optimization modes and adjusting different parameters of the capacitors in the neutralization module, so that the bandwidth of a system is improved, the quality of an eye pattern obtained by system testing is improved, the jitter of the system is inhibited, and the problems of insufficient bandwidth, poor quality of the eye pattern and low jitter performance existing in the traditional technical scheme are solved.

Description

Directly-modulated laser drive circuit and directly-modulated laser system
Technical Field
The application belongs to the technical field of optical communication, especially relates to a directly tune laser drive circuit and directly tune laser system.
Background
At present, in a conventional direct current coupled DML (direct Modulated Laser) system, an asymmetric bias is caused by an asymmetric anode and cathode driving circuit of a Laser diode due to a direct current bias current provided for the Laser. Because the impedance of the laser diode is relatively low, when the current changes rapidly, the parasitic inductance caused by the bonding wire can cause impedance higher than the impedance of the laser diode, so that a serious transient spike waveform is caused in a time domain, and the bandwidth of a system and an eye pattern and jitter performance obtained by a system test are seriously influenced.
Therefore, the conventional technical solutions have the problems of insufficient bandwidth, poor eye pattern quality and low jitter performance.
Disclosure of Invention
In view of this, embodiments of the present application provide a directly modulated laser driving circuit and a directly modulated laser system, which aim to solve the problems of insufficient bandwidth, poor eye diagram quality, and low jitter performance in the conventional technical solutions.
The first aspect of the embodiment of the application provides a directly modulated laser drive circuit, external first input signal and second input signal, directly modulated laser drive circuit is connected with the power through first anti-jamming module, directly modulated laser drive circuit and laser diode are connected, laser diode's positive pole passes through first anti-jamming module with the power is connected, directly modulated laser drive circuit includes:
a current modulation module including a first transistor, a second transistor, a first resistor, a first current sink, and a second current sink, wherein a base of the first transistor is connected to the first input signal, a collector of the first transistor is connected to the laser diode, the collector of the first transistor is a first output terminal of the current modulation module, a base of the second transistor is connected to the second control signal, a collector of the second transistor is connected to a cathode of the laser diode, the collector of the second transistor is a second output terminal of the current modulation module, a first end of the first resistor is connected to an emitter of the first transistor and a first end of the first current sink, and a second end of the first resistor is connected to an emitter of the second transistor and a first end of the second current sink, a second terminal of the first current sink and a second terminal of the second current sink are commonly grounded;
a neutralization module, wherein the neutralization module comprises a first capacitor and a second capacitor, a first end of the first capacitor is connected with a collector of the first transistor, a second end of the first capacitor is connected with a base of the second transistor, a first end of the second capacitor is connected with a base of the first transistor, and a second end of the second capacitor is connected with a collector of the second transistor, in the conventional technology, the first capacitor and the second capacitor are differential coupling capacitors, in the invention, different parameters are set in a respectively independent optimization mode for adjustment so as to eliminate asymmetric bias; and
the direct current bias module comprises a third current trap, the first end of the third current trap is the first end of the direct current bias module, the first end of the direct current bias module is connected to the cathode of the laser diode through the second anti-interference module, the second end of the third current trap is the second end of the direct current bias module, the second end of the direct current bias module is grounded, and the direct current bias module is used for providing direct current bias current for the laser diode.
In one embodiment, the neutralization module includes a first adjustment unit and a second adjustment unit for adjusting the neutralization peak behavior, the first adjustment unit is connected in series with the first capacitor, and the second adjustment unit is connected in series with the second capacitor.
In one embodiment, the first adjusting unit includes a second resistor, and the second adjusting unit includes a third resistor, the second resistor is connected in series with the first capacitor, and the third resistor is connected in series with the second capacitor.
In one embodiment, the current modulation module further includes a first mitigation unit and a second mitigation unit for mitigating transient spikes caused by parasitic inductance, a first end of the first mitigation unit is connected to the first input signal, a second end of the first mitigation unit is connected to the base of the first transistor, a first end of the second mitigation unit is connected to the second input signal, and a second end of the second mitigation unit is connected to the base of the second transistor.
In one embodiment, the current modulation module further includes a third mitigation unit for mitigating transient spikes caused by parasitic inductance, and the third mitigation unit is connected in series with the first resistor.
In one embodiment, the drive circuit of the directly-tuned laser further includes a servo loop module for increasing and fixing the voltage margin of the transistor, a first input terminal of the servo loop module is connected to a preset voltage value, a second input terminal of the servo loop module is connected to a central point of the first resistor, a third input terminal of the servo loop module is connected to the first input signal, a fourth input terminal of the servo loop module is connected to the second input signal, a first output terminal of the servo loop module is connected to the base of the first transistor, and a second output terminal of the servo loop module is connected to the base of the second transistor.
In one embodiment, the servo loop module includes a first comparator and a first operational amplifier, a positive phase input of the first comparator is a first input of the servo loop module, a negative phase input of the first comparator is a second input of the servo loop module, an output of the first comparator is connected to a control end of the first operational amplifier, a first input of the first operational amplifier is a third input of the servo loop module, a second input of the first operational amplifier is a fourth input of the servo loop module, a first output of the first operational amplifier is a first output of the servo loop module, and a second output of the first operational amplifier is a second output of the servo loop module.
In one embodiment, the current modulation module further comprises a first compensation unit for compensating bandwidth variation, and the first compensation unit is connected to the bias input ends of the first current sink and the second current sink in series.
In one embodiment, the directly modulated laser driving circuit further includes a second compensation unit for compensating bandwidth variation, a first end of the second compensation unit is connected to the first output end of the current modulation module, and a second end of the second compensation unit is connected to the second output end of the current modulation module.
A second aspect of the embodiments of the present application provides a directly modulated laser system, including foretell directly modulated laser drive circuit, power, first anti-jamming module, second anti-jamming module, third anti-jamming module and laser diode, the power passes through first anti-jamming module connect in directly modulated laser drive circuit, the second anti-jamming module first end connect in the laser diode negative pole, the second anti-jamming module second end connect with the first end of dc offset module. The first end of the third anti-jamming module is connected to the first end of the direct current offset module, and the second end of the third anti-jamming module is connected to the second end of the direct current offset module.
In one embodiment, the first interference rejection module comprises a first magnetic bead, the second interference rejection module comprises a second magnetic bead, and the third interference rejection module comprises a third capacitor.
According to the directly-tuned laser driving circuit, the asymmetric bias caused by the laser diode load and the driving circuit is eliminated by adopting the respective independent optimization mode and adjusting different parameters of the capacitor in the neutralization module, so that the bandwidth of a system is improved, the quality of an eye pattern obtained by a system test is improved, the jitter of the system is inhibited, and the problems of insufficient bandwidth, poor quality of the eye pattern and low jitter performance existing in the traditional technical scheme are solved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic circuit diagram of a drive circuit of a directly modulated laser according to an embodiment of the present disclosure;
FIG. 2 is a schematic circuit diagram of a neutralization module in the drive circuit of the directly tuned laser shown in FIG. 1 in another embodiment;
FIG. 3 is a schematic circuit diagram of another embodiment of a current modulation module in the drive circuit of the directly modulated laser shown in FIG. 1;
fig. 4 is a schematic circuit diagram of a directly modulated laser driving circuit according to an embodiment of the present application;
FIG. 5 is a schematic circuit diagram of another embodiment of a current modulation module in the drive circuit of the directly modulated laser of FIG. 1;
FIG. 6 is a schematic circuit diagram of a servo loop module in the drive circuit of the directly tuned laser shown in FIG. 1;
FIG. 7 is a schematic circuit diagram of another embodiment of a current modulation module in the direct-tuned laser driver circuit shown in FIG. 1;
fig. 8 is a schematic circuit diagram of a second compensation unit in the drive circuit of the directly-tuned laser shown in fig. 1;
fig. 9 is a schematic circuit diagram of a directly modulated laser driving system according to an embodiment of the second aspect of the present application;
FIG. 10 is a circuit schematic of the direct tuned laser drive system shown in FIG. 9;
fig. 11 is a system bandwidth diagram obtained after a driving circuit of a directly tuned laser is adjusted by using an asymmetric capacitor according to an embodiment of the present application;
fig. 12 is a system test eye diagram obtained by adding a compensation unit to a drive circuit of a directly tuned laser according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 1, a schematic structural diagram of a directly modulated laser driving circuit according to an embodiment of the present application shows only parts related to the embodiment for convenience of description, and the details are as follows:
in this embodiment, the direct-tuned laser driving circuit is externally connected with a first Input signal Input single-1 and a second Input signal Input single-2, the direct-tuned laser driving circuit is connected with a power VCC through a first anti-interference module 600, the direct-tuned laser driving circuit is connected with a laser diode D1, and an anode of the laser diode D1 is connected with the power VCC through the first anti-interference module 600.
In one embodiment, the direct-tuned laser driving circuit includes a neutralization module 100, a current modulation module 200, a dc bias module 300, a first immunity module 600, and a second immunity module 700, wherein the neutralization module 100 includes a capacitor C1 and a capacitor C2, the current modulation module 200 includes a transistor Q1 and a transistor Q2, a resistor R1, a first current sink 210, and a second current sink 220, and the dc bias module 300 includes a third current sink 310.
It should be understood that the capacitor C1 and the capacitor C2 do not need to be symmetrical, but are respectively optimized separately, and different parameters are set for the capacitor C1 and the capacitor C2 to adjust, so that the neutralization module can eliminate the influence caused by the asymmetrical structure of the laser diode D1 and the directly-tuned laser driving circuit, thereby improving the bandwidth of the system, improving the quality of an eye pattern obtained by system testing, and suppressing jitter.
It should be understood that the transistors Q1 and Q2 are specifically three-terminal transistors, for example, PNP-type triode, NPN-type triode, field effect transistor, MOS transistor, IGBT thyristor, etc., the transistors Q1 and Q2 may be differential symmetrical, and the transistors Q1 and Q2 shown in fig. 1 and the differential pair type formed by the two transistors in this embodiment are only an example, and are not limited to the types of the transistors and the differential pair.
It should be understood that the current sink may be embodied by a transistor, a resistor and a capacitor. Inductance and other electronic components.
The first anti-interference module 600 and the second anti-interference module 700 may employ devices, such as magnetic beads, capacitors, etc., capable of filtering high frequency noise and keeping current constant.
The base of the transistor Q1 is connected to the first Input signal Input single-1, the emitter of the transistor Q1 is connected to the first terminal of the resistor R1 and the first terminal of the first current well 210, the collector of the transistor Q1 is connected to the laser diode D1 and the power supply Vcc, the base of the transistor Q2 is connected to the second Input signal Input single-2, the emitter of the transistor Q2 is connected to the second terminal of the resistor R1 and the first terminal of the second current well 220, the collector of the transistor Q2 is connected to the cathode of the laser diode D1, the first terminal of the resistor R1 is connected to the emitter of the transistor Q1 and the first terminal of the first current well 210, the second terminal of the resistor R1 is connected to the emitter of the transistor Q2 and the first terminal of the second current well 220, and the second terminal of the first current well 210 and the second terminal of the second current well 220 are connected to ground.
A first terminal of the capacitor C1 is connected to the collector of the transistor Q1, a second terminal of the capacitor C1 is connected to the base of the transistor Q2, a first terminal of the capacitor C2 is connected to the base of the transistor Q1, and a second terminal of the capacitor C2 is connected to the collector of the transistor Q2.
The first terminal of the third current sink 310 is the first terminal of the dc bias module 300, the first terminal of the dc bias module is connected to the cathode of the laser diode D1 through the second interference rejection module 700, the second terminal of the third current sink 310 is the second terminal of the dc bias module 300, the second terminal of the dc bias module 300 is grounded, and the dc bias module 300 is configured to provide a dc bias current to the laser diode D1.
Referring to fig. 11, fig. 11 is a result of modeling the simulation system by using the circuit of the present embodiment, and it can be seen that the bandwidth of the system is significantly improved.
In the directly modulated laser driving circuit in this embodiment, by adopting a separate optimization mode, different parameters of the capacitor setting in the neutralization module are adjusted to eliminate asymmetric bias caused by the laser diode load and the driving circuit, so that the bandwidth of the system is improved, the quality of an eye pattern obtained by a system test is improved, the jitter of the system is suppressed, and the problems of insufficient bandwidth, poor eye pattern quality and low jitter performance existing in the conventional technical scheme are solved.
Referring to fig. 1 and 2, in a further embodiment, the neutralization module 100 further includes a first adjusting unit 101 and a second adjusting unit 102 for adjusting and neutralizing the peak value, the first adjusting unit 101 is connected in series with the capacitor C1, and the second adjusting unit 102 is connected in series with the capacitor C2. Capacitors C1 and C2 are added to the series tuning devices, respectively, to more finely tune and neutralize peak behavior, thereby improving eye pattern and jitter performance in system testing.
In one embodiment, the first adjusting unit 101 includes a resistor R2, the second adjusting unit 102 includes a resistor R3, a resistor R2 is connected in series with a capacitor C1, and a resistor R3 is connected in series with a capacitor C2. In the embodiment, series resistors are respectively added into the capacitors C1 and C2; in other embodiments, the first adjusting unit 101 and the second adjusting unit 102 may be other devices, such as inductors, capacitors, diodes, transistors, and the like.
Referring to fig. 1 and 3, in a further embodiment, the current modulation module 200 further includes a first mitigation unit 201 and a second mitigation unit 202 for mitigating transient spikes caused by parasitic inductance, a first terminal of the first mitigation unit 201 is connected to the first Input signal Input single-1, a second terminal of the first mitigation unit 201 is connected to a base of the transistor Q1, a first terminal of the second mitigation unit is connected to the second Input signal Input single-2, and a second terminal of the second mitigation unit is connected to a base of the transistor Q2.
It will be appreciated that parasitic inductances are liable to occur during printed circuit board routing and vias, and in this embodiment, the presence of parasitic inductances in the dcr driver circuit can be a significant hazard to the dcr driver circuit and to devices connected to the dcr driver circuit, for example: for ease of understanding, please refer to fig. 4, which illustrates one of the positions of the parasitic inductor, including the parasitic inductor BW1 and the parasitic inductor BW2, in fig. 4, and refer to the position of the parasitic inductor in other embodiments in this application.
In one embodiment, the first slow down unit 201 includes an inductor L1, the second slow down unit 202 includes an inductor L2, a first terminal of the inductor L1 is connected to the first Input signal Input single-1, a second terminal of the inductor L1 is connected to the base of the transistor Q1, a first terminal of the inductor L2 is connected to the second Input signal Input single-2, and a second terminal of the inductor L2 is connected to the base of the transistor Q2. In other embodiments, the first slowing unit 201 and the second slowing unit 202 may be other devices, such as inductive devices like magnetic beads.
The current modulation module 200 adds the slowing units 201 and 202, and utilizes the retarding characteristic (Lenz law or Faraday law) of the inductive device to the current change to slow down the excessively violent instantaneous peak value caused by parasitic inductance existing in the drive circuit of the directly modulated laser, thereby improving the quality of an eye diagram and inhibiting the system jitter.
Referring to fig. 1 and 5, in a further embodiment, the current modulation module 200 further includes a third mitigation unit 203 for mitigating transient spikes caused by parasitic inductance, and the third mitigation unit 203 is connected in series with the resistor R1.
In one embodiment, the third slowing unit 203 may be formed by a device with a blocking property for current variation, such as an inductor or a magnetic bead.
In the embodiment, the inductance is added, and the blocking characteristic (Lenz law or Faraday law) of the inductive device to the current change is utilized to slow down the excessively violent instantaneous peak value caused by parasitic inductance existing in the drive circuit of the direct-tuned laser, so that the quality of an eye diagram is improved, and the system jitter is restrained. This embodiment and the previous embodiment may be performed simultaneously or separately.
Referring to fig. 1 and 6, in an embodiment, the direct-tuned laser driving circuit further includes a servo loop module 400 for increasing and fixing a voltage margin of the transistor, a first Input terminal of the servo loop module 400 is connected to a predetermined voltage value, a second Input terminal of the servo loop module 400 is connected to a center point of a resistor R1, a third Input terminal of the servo loop module 400 is connected to a first Input signal Input single-1, a fourth Input terminal of the servo loop module 400 is connected to a second Input signal Input single-2, a first output terminal of the servo loop module 400 is connected to a base of a transistor Q1, and a second output terminal of the servo loop module 400 is connected to a base of a transistor Q2.
In a specific application, the servo loop module 400 may adopt an analog negative feedback control circuit, for example, a negative feedback control circuit composed of a comparator U1 and an operational amplifier U2, a positive phase input terminal of the comparator U1 is a first input terminal of the servo loop module 400, a negative phase input terminal is a second input terminal of the servo loop module 400, an output terminal of the comparator U1 is connected to a control terminal of the operational amplifier U2, a first input terminal of the operational amplifier U2 is a third input terminal of the servo loop module 400, a second input terminal of the operational amplifier U2 is a fourth input terminal of the servo loop module 400, a first output terminal of the operational amplifier U2 is a first output terminal of the servo loop module 400, and a second output terminal of the operational amplifier U2 is a second output terminal of the servo loop module 400.
In this embodiment, a servo loop module is added to change the supply voltage of the operational amplifier of the pre-driver stage through negative feedback, so as to adjust the common-mode voltage at the output end of the operational amplifier, and then control the dc bias voltage of the base nodes of Q1 and Q2, that is, compare the voltage value at the center of the resistor R1 with a preset reference voltage REF, and drive the operational amplifier by the obtained voltage difference, the driver stage of the operational amplifier outputs the dc bias voltage of the base nodes of Q1 and Q2, for example, the common-mode voltage needs to be increased by 0.2V, the output end of the feedback operational amplifier is connected to the PMOS switch gate connected in series with the previous stage voltage, the drain voltage of the PMOS will be automatically adjusted by the feedback circuit to be increased by 0.2V, the servo loop module added in this embodiment enables the base common-mode voltages of Q1 and Q2 to be fixed at the preset values (close to the input reference voltage of the operational amplifier), so as to avoid at a specific voltage, temperature, or voltage margin issues under manufacturing variations.
Referring to fig. 1, 7 and 12, in one embodiment, the current modulation module 200 further includes a first compensation unit 204 for compensating for bandwidth variation, and the first compensation unit 204 is connected in series to the bias input terminals of the first current sink 210 and the second current sink 220.
In a specific application, the first compensation unit 204 may employ a device having a function of canceling a dc bias, such as a bias resistor.
Fig. 12 shows the eye diagram obtained by the system test when the present embodiment is adopted, and it can be seen that the eye diagram has large open "eyes", correct eye diagram and small intersymbol interference.
When the bias current of the current trap is adjusted up or down, the positions of the pole and the zero of the intermediate frequency are changed, so that the frequency response of the drive circuit of the direct-tuned laser is affected.
Referring to fig. 1 and 8, in an embodiment, the direct-modulated laser driving circuit further includes a second compensation unit 500 for compensating for bandwidth variation, a first terminal of the second compensation unit 500 is connected to the first output terminal of the current modulation module, and a second terminal of the second compensation unit 500 is connected to the second output terminal of the current modulation module.
In a specific application, the second compensation unit 500 may be formed with an adjustable capacitor, such as a variable capacitor array.
In this embodiment, the second compensation unit with an adjustable capacitor is added between the output ends of the current modulation module, and its parameters are correspondingly adjusted according to the high-frequency response of the circuit, so as to realize compensation for the system bandwidth variation.
Referring to fig. 9, a second aspect of the present application provides a directly modulated laser system, which includes the directly modulated laser driving circuit, a laser diode D1, a power supply Vcc, a first interference rejection module 600, a second interference rejection module 700, and a third interference rejection module 800.
In a specific application, the anti-interference module may employ a device capable of filtering high-frequency noise and keeping a current constant, such as a magnetic bead, a capacitor, and the like.
The power supply is connected to the driving circuit of the direct-tuned laser through the first anti-interference module 600, the first terminal of the second anti-interference module 700 is connected to the cathode of the laser diode D1, and the second terminal of the second anti-interference module 700 is connected to the first terminal of the dc bias module 300.
Referring to fig. 10, in an embodiment, the first interference rejection module 600 includes a first magnetic bead, the second interference rejection module 700 includes a second magnetic bead 701, the third interference rejection module 800 includes a capacitor C3, a first end of the first magnetic bead 601 is connected to the power supply, a second end of the first magnetic bead 601 is connected to an emitter of the first transistor, a first end of the second magnetic bead 701 is connected to a cathode of the laser diode D1, a second end of the second magnetic bead 701 is connected to the first end of the dc bias module 300, a first end of the capacitor C3 is connected to the first end of the dc bias module, and a second end of the capacitor C3 is connected to the second end of the dc bias module.
Various embodiments are described herein for various devices, circuits, apparatuses, systems, and/or methods. Numerous specific details are set forth in order to provide a thorough understanding of the overall structure, function, manufacture, and use of the embodiments as described in the specification and illustrated in the accompanying drawings. However, it will be understood by those skilled in the art that the embodiments may be practiced without such specific details. In other instances, well-known operations, components and elements have been described in detail so as not to obscure the embodiments in the description. It will be appreciated by those of ordinary skill in the art that the embodiments herein and shown are non-limiting examples, and thus, it can be appreciated that the specific structural and functional details disclosed herein may be representative and do not necessarily limit the scope of the embodiments.
Reference throughout the specification to "various embodiments," "in an embodiment," "one embodiment," or "an embodiment," etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, appearances of the phrases "in various embodiments," "in some embodiments," "in one embodiment," or "in an embodiment," or the like, in places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Thus, a particular feature, structure, or characteristic illustrated or described in connection with one embodiment may be combined, in whole or in part, with features, structures, or characteristics of one or more other embodiments without presuming that such combination is not an illogical or functional limitation.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/terminal device and method may be implemented in other ways. For example, the above-described embodiments of the apparatus/terminal device are merely illustrative, and for example, the division of the modules or units is only one logical division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. The utility model provides a directly transfer laser drive circuit which characterized in that, external first input signal and second input signal, directly transfer laser drive circuit is connected with the power through first anti-jamming module, directly transfer laser drive circuit is connected with laser diode, laser diode's positive pole through first anti-jamming module with the power is connected, directly transfer laser drive circuit includes:
a current modulation module including a first transistor, a second transistor, a first resistor, a first current sink, and a second current sink, wherein a base of the first transistor is connected to the first input signal, a collector of the first transistor is connected to an anode of the laser diode, a collector of the first transistor is a first output terminal of the current modulation module, a base of the second transistor is connected to the second input signal, a collector of the second transistor is connected to a cathode of the laser diode, a collector of the second transistor is a second output terminal of the current modulation module, a first end of the first resistor is connected to an emitter of the first transistor and a first end of the first current sink, and a second end of the first resistor is connected to an emitter of the second transistor and a first end of the second current sink, a second terminal of the first current sink and a second terminal of the second current sink are commonly grounded;
the first end of the first capacitor is connected with the collector of the first transistor, the second end of the first capacitor is connected with the base of the second transistor, the first end of the second capacitor is connected with the base of the first transistor, the second end of the second capacitor is connected with the collector of the second transistor, and the first capacitor and the second capacitor are adjusted by setting different parameters in a respectively independent optimization mode so as to eliminate asymmetric bias caused by the load and the driving circuit of the laser diode; and
the direct current bias module comprises a third current trap, the first end of the third current trap is the first end of the direct current bias module, the first end of the direct current bias module is connected to the cathode of the laser diode through the second anti-interference module, the second end of the third current trap is the second end of the direct current bias module, the second end of the direct current bias module is grounded, and the direct current bias module is used for providing direct current bias current for the laser diode.
2. The direct mode laser driver circuit of claim 1, wherein the neutralization module comprises a first adjustment unit and a second adjustment unit for adjusting the neutralization peak behavior, the first adjustment unit being in series with the first capacitor, the second adjustment unit being in series with the second capacitor.
3. The directly tuned laser driving circuit of claim 2, the first adjusting unit comprising a second resistor, the second adjusting unit comprising a third resistor, the second resistor being in series with the first capacitor, the third resistor being in series with the second capacitor.
4. The direct-tuned laser driver circuit of claim 1, wherein said current modulation module further comprises a first mitigation unit and a second mitigation unit for mitigating transient spikes caused by parasitic inductance, a first terminal of said first mitigation unit being coupled to said first input signal, a second terminal of said first mitigation unit being coupled to a base of said first transistor; the first end of the second retarding unit is connected to the second input signal, and the second end of the second retarding unit is connected to the base of the second transistor.
5. The direct mode laser driver circuit of claim 1, wherein the current modulation module further comprises a third mitigation unit to mitigate transient spikes caused by parasitic inductance, the third mitigation unit being in series with the first resistor.
6. The direct mode laser driver circuit of claim 1, further comprising a servo loop module for boosting and fixing a voltage margin of the transistor, wherein a first input of the servo loop module is connected to a predetermined voltage value, a second input of the servo loop module is connected to the first resistor center point, a third input of the servo loop module is connected to the first input signal, a fourth input of the servo loop module is connected to the second input signal, a first output of the servo loop module is connected to the base of the first transistor, and a second output of the servo loop module is connected to the base of the second transistor.
7. The direct mode laser driver circuit of claim 6, wherein the servo loop module includes a first comparator and a first operational amplifier, the positive phase input end of the first comparator is the first input end of the servo loop module, the negative phase input end of the first comparator is the second input end of the servo loop module, the output end of the first comparator is connected with the control end of the first operational amplifier, the first input end of the first operational amplifier is the third input end of the servo loop module, the second input terminal of the first operational amplifier is a fourth input terminal of the servo loop module, the first output terminal of the first operational amplifier is a first output terminal of the servo loop module, the second output end of the first operational amplifier is the second output end of the servo loop module.
8. The direct mode laser driver circuit of claim 1, wherein the current modulation module further comprises a first compensation unit to compensate for bandwidth variations, the first compensation unit being connected in series to bias inputs of the first and second current wells.
9. The direct mode laser driver circuit of claim 1, further comprising a second compensation unit to compensate for bandwidth variations, a first terminal of the second compensation unit being connected to the first output terminal of the current modulation module, and a second terminal of the second compensation unit being connected to the second output terminal of the current modulation module.
10. A directly modulated laser system, characterized in that, the directly modulated laser driving device includes the directly modulated laser driving circuit of any one of claims 1-9, a power supply, a first anti-interference module, a second anti-interference module, a third anti-interference module and a laser diode, the power supply is connected to the directly modulated laser driving circuit through the first anti-interference module, a first end of the second anti-interference module is connected to the laser diode cathode, a second end of the second anti-interference module is connected to a first end of the dc bias module.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437507A (en) * 2011-12-02 2012-05-02 烽火通信科技股份有限公司 Automatic power control circuit for driving optical communication laser
CN103928842A (en) * 2014-04-23 2014-07-16 福建一丁芯光通信科技有限公司 High-speed laser diode driver integrated circuit adopting negative capacitance neutralizing technology
CN105717590A (en) * 2016-04-28 2016-06-29 四川华拓光通信股份有限公司 Device for increasing light modulation amplitude of SFP light module and application method of device
CN104617483B (en) * 2015-01-27 2017-06-16 东南大学 The ultrahigh speed laser driver circuit and driver chip of a kind of bandwidth compensation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323669A1 (en) * 2003-05-14 2004-12-02 Atmel Germany Gmbh Driver circuit for operating an electronic component
CN102299477A (en) * 2011-07-19 2011-12-28 维林光电(苏州)有限公司 Low-coherence semiconductor laser and preparation method thereof
CN107070556A (en) * 2017-03-17 2017-08-18 深圳市傲科光电子有限公司 A kind of bidirectional optical fiber transmission circuit and bidirectional optical fiber transceiver
US10574026B2 (en) * 2017-03-23 2020-02-25 Infineon Technologies Ag Circuit and method for driving a laser diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437507A (en) * 2011-12-02 2012-05-02 烽火通信科技股份有限公司 Automatic power control circuit for driving optical communication laser
CN103928842A (en) * 2014-04-23 2014-07-16 福建一丁芯光通信科技有限公司 High-speed laser diode driver integrated circuit adopting negative capacitance neutralizing technology
CN104617483B (en) * 2015-01-27 2017-06-16 东南大学 The ultrahigh speed laser driver circuit and driver chip of a kind of bandwidth compensation
CN105717590A (en) * 2016-04-28 2016-06-29 四川华拓光通信股份有限公司 Device for increasing light modulation amplitude of SFP light module and application method of device

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