CN111384076B - Sensor structure and forming method thereof - Google Patents

Sensor structure and forming method thereof Download PDF

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CN111384076B
CN111384076B CN202010295763.9A CN202010295763A CN111384076B CN 111384076 B CN111384076 B CN 111384076B CN 202010295763 A CN202010295763 A CN 202010295763A CN 111384076 B CN111384076 B CN 111384076B
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forming
substrate
layer
metal
silicon
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CN111384076A (en
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侯红伟
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Axg Lighting Co ltd
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Axg Lighting Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention provides a sensor structure and a method of forming the same, the method comprising the steps of: providing a substrate, wherein the substrate is provided with a plurality of pixel regions, thinning the substrate from the second surface of the substrate, forming a first antireflection layer, forming grid structures, alternately forming metal nets and filter layers in grooves formed by surrounding each grid structure until forming an Nth metal net and an Nth filter layer, wherein N is a natural number not less than 3, wherein the ratio of the thickness of each filter layer to the thickness of each metal net is 5-10, the porosity of each metal net is greater than or equal to 80%, forming a second antireflection layer on the Nth filter layer, and forming a lens layer on the second antireflection layer.

Description

Sensor structure and forming method thereof
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a sensor structure and a forming method thereof.
Background
An image sensor, or a photosensitive element, is a device that converts an optical image into an electronic signal, and is widely used in digital cameras and other electro-optical devices. Early image sensors used analog signals, such as video camera tubes (tubes). With the rapid development of digital technology, semiconductor manufacturing technology and networks, the market and industry are facing the era of integration of video, audio and video, and communication across platforms, which will draw on the future beauty of human daily life. The application of the digital camera in daily life is undoubtedly a digital camera product, and the development speed of the digital camera product can be described by the change of the day and the night. The market for digital cameras is growing at an alarming rate, and therefore, the image sensor product, which is a key component, is an object of current and future industry attention, and is attracting investment of a plurality of manufacturers. The image sensor products are mainly classified into three types, namely, a CCD sensor, a CMOS sensor and a CIS sensor, according to product categories.
However, as the integration of devices increases, how to improve the performance of image sensors has attracted much attention.
Disclosure of Invention
It is an object of the present invention to overcome the above-mentioned deficiencies of the prior art and to provide a sensor structure and method of forming the same.
In order to achieve the above object, the present invention provides a method for forming a sensor structure, including the following steps:
(1) providing a substrate, wherein the substrate is provided with a plurality of pixel areas, an isolation area is arranged between the adjacent pixel areas, the substrate is provided with a first surface and a second surface which are opposite, a photosensitive area is formed in each pixel area, and the photosensitive area is exposed from the first surface of the substrate.
(2) The substrate is then thinned from the second surface of the substrate.
(3) A first anti-reflective layer is then formed on the second surface of the substrate.
(4) Then forming a photoresist layer on the second surface of the substrate, then forming a groove in the photoresist layer; then, a grid structure is formed in the groove, and then the photoresist layer is removed.
(5) And then arranging a first metal net in a groove formed by surrounding each grid structure, then forming a first optical filter layer in the groove, and then alternately forming the metal net and the optical filter layer until an Nth metal net and an Nth optical filter layer are formed, wherein N is a natural number not less than 3, the ratio of the thickness of each optical filter layer to the thickness of each metal net is 5-10, and the porosity of the metal net is more than or equal to 80%.
(6) A second anti-reflective layer is then formed on the nth filter layer.
(7) A lens layer is then formed on the second anti-reflective layer.
Preferably, the substrate is made of one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, germanium, silicon germanium, gallium arsenide and cadmium telluride, and the photosensitive region is a photodiode or a photosensitive MOS transistor.
Preferably, the substrate is thinned by a CMP process.
Preferably, the first anti-reflection layer is formed by a PECVD method, and the material of the first anti-reflection layer is one or more of silicon oxide, silicon nitride, and silicon oxynitride.
Preferably, the grid structure is a single-layer structure or a multi-layer composite structure, and the material of the grid structure comprises a metal material and/or an inorganic non-metal material.
Preferably, in the step (5), the metal mesh is made of copper or silver, and the preparation process of the metal mesh comprises the following steps: a suspension containing metal nanowires is spin coated on the second surface of the substrate and passed through a thermal treatment process to form the metal mesh.
Preferably, the second anti-reflection layer is formed by a PECVD method, and the material of the second anti-reflection layer is one or more of silicon oxide, silicon nitride, and silicon oxynitride.
The invention also provides a sensor structure which is prepared by the method.
Compared with the prior art, the invention has the following advantages:
in the manufacturing process of the sensor structure of the invention, by arranging a first metal mesh in a trench formed by surrounding each grid structure, then forming a first filter layer in the trench, then alternately forming the metal mesh and the filter layer until forming an Nth metal mesh and an Nth filter layer, wherein N is a natural number not less than 3, wherein the ratio of the thickness of each filter layer to the thickness of each metal mesh is 5-10, the porosity of the metal mesh is greater than or equal to 80%, each filter layer is provided with a metal nano-mesh structure, the metal nano-mesh structure can fix the filter layer, the metal mesh has enough porosity, the transmission channel of a light source can be ensured, and the upper and lower surfaces of the filter layer are provided with anti-reflection layers, so that the light loss is effectively reduced, the filter unit formed by the method, can effectively restrain the filtering unit and take place deformation in the use, and then can ensure that sensor structure all can normal use in different environment, even use under high temperature environment, the filter layer can not take place obvious thermal expansion effect yet, the weatherability and the durability of the image sensor structure that have effectively improved.
Drawings
Fig. 1 to 7 are schematic structural views illustrating a process of forming a sensor structure according to an embodiment of the present invention.
Detailed Description
The invention provides a method for forming a sensor structure, which comprises the following steps:
(1) providing a substrate, wherein the substrate is provided with a plurality of pixel areas, an isolation area is arranged between the adjacent pixel areas, the substrate is provided with a first surface and a second surface which are opposite, a photosensitive area is formed in each pixel area, and the photosensitive area is exposed from the first surface of the substrate.
(2) The substrate is then thinned from the second surface of the substrate.
(3) A first anti-reflective layer is then formed on the second surface of the substrate.
(4) Then forming a photoresist layer on the second surface of the substrate, and then forming a groove in the photoresist layer; then, a grid structure is formed in the groove, and then the photoresist layer is removed.
(5) And then arranging a first metal net in a groove formed by surrounding each grid structure, then forming a first optical filter layer in the groove, and then alternately forming the metal net and the optical filter layer until an Nth metal net and an Nth optical filter layer are formed, wherein N is a natural number not less than 3, the ratio of the thickness of each optical filter layer to the thickness of each metal net is 5-10, and the porosity of the metal net is more than or equal to 80%.
(6) A second anti-reflective layer is then formed on the nth filter layer.
(7) And then forming a lens layer on the second anti-reflection layer.
Furthermore, the substrate is made of monocrystalline silicon, polycrystalline silicon, amorphous silicon, germanium, silicon germanium, gallium arsenide or cadmium telluride, and the photosensitive region is a photodiode or a photosensitive MOS tube.
Further, the substrate is thinned through a CMP process.
Further, the first antireflection layer is formed by a PECVD method, and the material of the first antireflection layer is one or more of silicon oxide, silicon nitride, and silicon oxynitride.
Further, the grid structure is a single-layer structure or a multi-layer composite structure, and the material of the grid structure comprises a metal material and/or an inorganic non-metal material.
Further, in the step (5), the metal mesh is made of copper or silver, and the preparation process of the metal mesh comprises the following steps: and spin-coating a suspension containing metal nanowires on the second surface of the substrate, and forming the metal mesh through a heat treatment process.
Further, the second antireflection layer is formed by a PECVD method, and the material of the second antireflection layer is one or more of silicon oxide, silicon nitride, and silicon oxynitride.
The following is a detailed description of the structure of the sensor structure forming process in conjunction with fig. 1-7.
Referring to fig. 1, a substrate 10 is provided, the substrate 10 has a plurality of pixel regions 11 therein, an isolation region 12 is disposed between adjacent pixel regions 11, the substrate 10 has a first surface and a second surface opposite to each other, a photosensitive region is formed in each pixel region 11, and the photosensitive region is exposed from the first surface of the substrate 10. The photosensitive region is a photosensitive element, specifically is a photodiode or photosensitive MOS tube capable of detecting light, the pixel region further comprises elements such as transfer crystalline silicon, reset crystalline silicon, selective crystalline silicon and storage transistors, the photosensitive region is used for absorbing light and performing photoelectric conversion on the absorbed light, and the pixel region 11 forms a pixel array. The isolation region 12 is a shallow trench isolation structure or a deep trench isolation structure, which is used to prevent optical crosstalk between adjacent pixel regions 11.
The substrate 10 is made of one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, germanium, silicon germanium, gallium arsenide, and cadmium telluride, a plurality of photosensitive elements or transistors are formed in the substrate, the substrate 10 may also be a silicon-on-insulator substrate, a quartz substrate, a ceramic substrate, a glass substrate, and a plurality of photosensitive elements or transistors are formed in a functional layer (not shown) on the substrate 10.
Referring to fig. 2, the substrate 10 is thinned from the second surface of the substrate 10, in an embodiment, the substrate 10 is thinned by a CMP process, so that the thickness of the thinned substrate is 30 to 60 micrometers, and the sensor structure is lighter, thinner and more miniaturized by the thinning process. Before the substrate 10 is thinned, a circuit wiring layer is formed on the first surface of the substrate 10, the circuit wiring layer is electrically connected with the pixel region 11, and the circuit wiring layer comprises a dielectric layer and a metal interconnection structure located in the dielectric layer.
Referring to fig. 3, a first anti-reflective layer 20 is formed on the second surface of the substrate 10, the first anti-reflective layer 20 is formed by a PECVD method, the first anti-reflective layer 20 is made of one or more materials selected from silicon oxide, silicon nitride, and silicon oxynitride, the first anti-reflective layer 20 is used for reducing or eliminating reflected light, so as to increase light transmittance, eliminate stray light, and improve sensitivity of the pixel structure.
Referring to fig. 4, a photoresist layer 30 is formed on the second surface of the substrate 10, and then a groove 31 is formed in the photoresist layer 30; a grid structure 40 is then formed in the recess 31 and the photoresist layer is then removed. In a specific embodiment, a photoresist layer 30 is first spin-coated on the second surface of the semiconductor substrate 10, a groove 31 is then formed through a developing process, a grid structure 40 is then formed in the groove 31, when the grid structure 40 is a single-layer metal structure, the grid structure 40 may be specifically copper, aluminum, tungsten, copper-aluminum alloy, tungsten-copper alloy, or the like, a metal layer is formed through thermal evaporation or magnetron sputtering using a mask, and then the metal material on the surface of the photoresist layer 30 is etched back, so that the grid structure 40 is formed. The grid structure can be multilayer composite construction, specifically can include metal level, adhesion layer and oxide layer, the metal level includes copper, aluminium, tungsten, copper aluminum alloy, tungsten copper alloy etc. the material of adhesion layer includes materials such as silicon nitride, silicon oxynitride, the material of oxide layer includes silicon oxide.
Referring to fig. 5, a first metal mesh 51 is disposed in a trench surrounded by each grid structure 40, a first filter layer 52 is formed in the trench, and then the metal meshes 51 and the filter layers 52 are alternately formed until an nth metal mesh 51 and an nth filter layer 52 are formed, where N is a natural number not less than 3, a ratio of a thickness of each filter layer to a thickness of each metal mesh is 5-10, a porosity of the metal mesh is greater than or equal to 80%, the metal mesh 51 and the filter layers 52 form a filter unit, in a specific embodiment, a material of the metal mesh is copper or silver, and a preparation process of the metal mesh is: spin-coating a suspension containing metal nanowires on the second surface of the substrate, and performing a heat treatment process to form the metal mesh, wherein the metal nanowires may specifically be copper nanowires or silver nanowires, the diameter of the metal nanowires is 30-90 nm, different amounts of the metal nanowires are placed in ethanol or acetone or chlorobenzene to form a suspension, the configured concentration is 5-20mg/ml, in a specific embodiment, an ethanol suspension containing silver nanowires with a concentration of 10mg/ml is then spin-coated on the substrate 10, the spin-coating speed is 2000-5000 rpm, the specific spin-coating speed is 3000 rpm, 3500 rpm, 4000 rpm or 4500 rpm, the spin-coating time is 1-2 minutes, and then performing a heat treatment at 80-100 ℃ for 5-10 minutes, forming a first metal mesh 51 with a porosity of 90%, spin-coating a photoresist material of the filter layer at a rotation speed of 4000-6000 rpm, forming a first filter layer 52 by an exposure and development process, wherein a ratio of a thickness of the first filter layer 52 to a thickness of the first metal mesh is 5-10, and a thickness of the first filter layer is 150-300 nm, and sequentially forming a second metal mesh, a second filter layer, a third metal mesh, a third filter layer … to an Nth metal mesh and an Nth filter layer, wherein N may be 4, 5, 6, 7 … 10.
Referring to fig. 6, a second anti-reflection layer 60 is formed on the nth filter layer, the second anti-reflection layer 60 is formed by a PECVD method, the second anti-reflection layer 60 is made of one or more of silicon oxide, silicon nitride and silicon oxynitride, and the second anti-reflection layer 60 is used for reducing or eliminating reflected light, so as to increase light transmittance and eliminate stray light, thereby improving sensitivity of the pixel structure.
Referring to fig. 7, a lens layer 70 is then formed on the second anti-reflective layer, specifically: and spin-coating a photoresist, wherein the thickness of the photoresist is more than or equal to 1 micron, corresponding photoresist squares are formed above each light filtering unit, the plane size of each photoresist square is 66-85% of the plane size of the corresponding light filtering unit, the central position of each photoresist square is respectively opposite to the central position of each light filtering unit, and further, a lens shape is formed through an etching process.
The invention also provides a sensor structure which is prepared by the method.
In the manufacturing process of the sensor structure of the present invention, by disposing a first metal mesh in a trench formed around each of the grid structures, then forming a first filter layer in the trench, then alternately forming the metal meshes and the filter layers until forming an nth metal mesh and an nth filter layer, where N is a natural number not less than 3, wherein a ratio of a thickness of each of the filter layers to a thickness of each of the metal meshes is 5 to 10, a porosity of the metal meshes is 80% or more, each of the filter layers has a metal nano-mesh structure therein, the metal nano-mesh structure can fix the filter layer, and the metal mesh has a sufficient porosity, can ensure a transmission path of a light source, and is provided with anti-reflection layers on upper and lower surfaces of the filter layer, which effectively reduces light loss, the filter unit formed by the above method, can effectively restrain the filtering unit and take place deformation in the use, and then can ensure that sensor structure all can normal use in different environment, even use under high temperature environment, the filter layer can not take place obvious thermal expansion effect yet, the weatherability and the durability of the image sensor structure that have effectively improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (8)

1. A method of forming a sensor structure, comprising: the method comprises the following steps:
(1) providing a substrate, wherein the substrate is provided with a plurality of pixel areas, an isolation area is arranged between the adjacent pixel areas, the substrate is provided with a first surface and a second surface which are opposite, a photosensitive area is formed in each pixel area, and the photosensitive area is exposed from the first surface of the substrate;
(2) then thinning the substrate from the second surface of the substrate;
(3) then forming a first antireflection layer on the second surface of the substrate;
(4) then forming a photoresist layer on the second surface of the substrate, and then forming a groove in the photoresist layer; then forming a grid structure in the groove, and then removing the photoresist layer;
(5) then arranging a first metal net in a groove formed by surrounding each grid structure, then forming a first filter layer in the groove, and then alternately forming the metal net and the filter layer until an Nth metal net and an Nth filter layer are formed, wherein N is a natural number not less than 3, the ratio of the thickness of each filter layer to the thickness of each metal net is 5-10, and the porosity of the metal net is more than or equal to 80%;
(6) then forming a second antireflection layer on the Nth filter layer;
(7) a lens layer is then formed on the second anti-reflective layer.
2. The method of forming a sensor structure of claim 1, wherein: the substrate is made of monocrystalline silicon, polycrystalline silicon, amorphous silicon, germanium, silicon germanium, gallium arsenide or cadmium telluride, and the photosensitive area is a photodiode or a photosensitive MOS tube.
3. The method of forming a sensor structure of claim 1, wherein: and thinning the substrate by a CMP process.
4. The method of forming a sensor structure of claim 1, wherein: and forming the first antireflection layer by a PECVD method, wherein the material of the first antireflection layer is one or more of silicon oxide, silicon nitride and silicon oxynitride.
5. The method of forming a sensor structure of claim 1, wherein: the grid structure is a single-layer structure or a multi-layer composite structure, and the material of the grid structure comprises a metal material and/or an inorganic non-metal material.
6. The method of forming a sensor structure of claim 1, wherein: in the step (5), the metal mesh is made of copper or silver, and the preparation process of the metal mesh comprises the following steps: a suspension containing metal nanowires is spin coated on the second surface of the substrate and passed through a thermal treatment process to form the metal mesh.
7. The method of forming a sensor structure of claim 1, wherein: and forming the second antireflection layer by a PECVD method, wherein the material of the second antireflection layer is one or more of silicon oxide, silicon nitride and silicon oxynitride.
8. A sensor structure formed by the method of any one of claims 1 to 7.
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KR20110000891A (en) * 2009-06-29 2011-01-06 주식회사 동부하이텍 Back side illumination image sensor and method for manufacturing the same
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CN109560096A (en) * 2018-11-15 2019-04-02 德淮半导体有限公司 Imaging sensor and forming method thereof
CN109860219A (en) * 2019-04-10 2019-06-07 德淮半导体有限公司 Imaging sensor and forming method thereof
CN110061020A (en) * 2019-04-25 2019-07-26 德淮半导体有限公司 Imaging sensor and forming method thereof, working method

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US10665627B2 (en) * 2017-11-15 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens

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Publication number Priority date Publication date Assignee Title
KR20110000891A (en) * 2009-06-29 2011-01-06 주식회사 동부하이텍 Back side illumination image sensor and method for manufacturing the same
CN108364965A (en) * 2018-01-31 2018-08-03 德淮半导体有限公司 Imaging sensor and forming method thereof
CN109560096A (en) * 2018-11-15 2019-04-02 德淮半导体有限公司 Imaging sensor and forming method thereof
CN109860219A (en) * 2019-04-10 2019-06-07 德淮半导体有限公司 Imaging sensor and forming method thereof
CN110061020A (en) * 2019-04-25 2019-07-26 德淮半导体有限公司 Imaging sensor and forming method thereof, working method

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