CN111383684A - Reference voltage determining method and device and storage medium - Google Patents
Reference voltage determining method and device and storage medium Download PDFInfo
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Abstract
The embodiment of the invention discloses a reference voltage determining method, which is characterized by comprising the following steps: traversing reference voltages in the reference voltage value set in an increasing mode to obtain the minimum reference voltage of the electronic equipment; traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment; determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device. By adopting the method, the minimum reference voltage of the electronic equipment is obtained in a mode of increasing the reference voltage, and the maximum reference voltage of the electronic equipment is obtained in a mode of decreasing the reference voltage, so that the method can adapt to the influence caused by different external environments, avoid the problem of unstable reference voltage boundary, enable the reference voltage value to be more accurate, and further improve the system stability of the electronic equipment.
Description
Technical Field
The present invention relates to the field of computer technologies, and in particular, to a method and an apparatus for determining a reference voltage, and a storage medium.
Background
Double Data Rate (DDR) is the mainstream memory specification at present, and a Data Input/Output Voltage Reference (DQ _ VREF) index in the DDR memory technology is used to determine whether the current Data value is 1 or 0. The data is determined to be 1 when the voltage is greater than the DQ _ VREF value, and is determined to be 0 when the voltage is less than the DQ _ VREF value. With the development of DDR memory technology, the operating speed is faster and faster, and in order to improve the reliability of DDR, the concept of DQ _ VREF real-time training is introduced in the fourth generation DDR (DDR4) to improve the accuracy of DQ _ VREF.
In the related art, while training DQ _ VREF, it traverses from the minimum value to the maximum value of the reference voltage range to determine the available minimum reference voltage (VREF _ Min) and the available maximum reference voltage (VREF _ Max); however, since DDR involves analog signals, it is unstable at the boundary of the reference voltage range due to the influence of different external environments; when an unstable condition occurs at the boundary of the minimum value of the reference voltage range, it will cause the obtained available VREF _ Max abnormality; as close to the obtained available VREF _ Min value, resulting in an anomaly in the finally obtained DQ _ VREF value.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention provide a method and an apparatus for determining a reference voltage, and a storage medium, which can adapt to influences caused by different external environments, and avoid the problem of unstable reference voltage boundary, so that a reference voltage value is more accurate.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a method for determining a reference voltage, where the method includes:
traversing reference voltages in the reference voltage value set in an increasing mode to obtain the minimum reference voltage of the electronic equipment;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
In the above solution, the incrementally traversing the reference voltages in the set of reference voltage values to obtain the minimum reference voltage of the electronic device includes:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the minimum reference voltage of the electronic equipment;
the reference voltage value sets are arranged according to the ascending order of the reference voltage values.
In the above solution, the incrementally traversing the reference voltages in the set of reference voltage values to obtain the minimum reference voltage of the electronic device includes:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
In the above solution, the traversing reference voltages in the reference voltage value set in a descending manner to obtain a maximum reference voltage of the electronic device includes:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the maximum reference voltage of the electronic equipment;
wherein the reference voltage value sets are arranged in descending order of magnitude of the reference voltage values.
In the above solution, the traversing reference voltages in the reference voltage value set in a descending manner to obtain a maximum reference voltage of the electronic device includes:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the maximum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
In the above solution, after determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further includes:
performing particle reference voltage training on the electronic device based on a reference voltage of the electronic device to determine a particle reference voltage of the electronic device.
In the above solution, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes:
determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
In a second aspect, an embodiment of the present invention provides a reference voltage determining apparatus, where the apparatus includes:
the acquisition module is used for traversing reference voltages in a reference voltage value set in an increasing mode to acquire the minimum reference voltage of the electronic equipment;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
the determining module is used for determining the reference voltage of the electronic equipment according to the minimum reference voltage of the electronic equipment and the maximum reference voltage of the electronic equipment.
In a third aspect, an embodiment of the present invention provides a reference voltage determining apparatus, including a processor and a memory for storing a computer program capable of running on the processor; wherein the processor is configured to perform the steps of the above method when running the computer program.
In a fourth aspect, embodiments of the present invention provide a storage medium having a computer program stored thereon, which when executed by a processor, implement the steps of the above-described method.
The reference voltage determining method, the reference voltage determining device and the storage medium provided by the embodiment of the invention can traverse the reference voltage in the reference voltage value set in an increasing mode to obtain the minimum reference voltage of the electronic equipment; traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment; determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device. By adopting the method, the minimum reference voltage of the electronic equipment is obtained in a mode of increasing the reference voltage progressively, and the maximum reference voltage of the electronic equipment is obtained in a mode of decreasing the reference voltage progressively, so that the reference voltage determined based on the minimum reference voltage and the maximum reference voltage can adapt to the influence brought by different external environments, the problem of unstable reference voltage boundary is avoided, the reference voltage value is more accurate, and the system stability of the electronic equipment is improved.
Drawings
Fig. 1 is a schematic flow chart of a reference voltage determining method according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of PHY _ VREF _ tracking of a DDR4 memory according to an embodiment of the present invention;
fig. 3 is a schematic flowchart illustrating a process of obtaining a minimum reference voltage of an electronic device according to an embodiment of the present invention;
fig. 4 is a schematic flowchart illustrating a process of obtaining a maximum reference voltage of an electronic device according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a reference voltage determining apparatus according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an obtaining unit according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another reference voltage determining apparatus according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example one
An embodiment of the present invention provides a method for determining a reference voltage, as shown in fig. 1, the method includes the following steps:
step S101: and traversing the reference voltages in the reference voltage value set in an incremental mode to obtain the minimum reference voltage of the electronic equipment.
In the embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, and read-write verification is performed on the electronic device starting from the first reference voltage in the reference voltage value set (i.e. the minimum reference voltage in the reference voltage value set); when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
In specific implementation, the technical solution of the embodiment of the present invention can be specifically described by taking the grain reference voltage Training (DRAM _ VREF _ Training) of the DDR4 memory as an example.
As shown in fig. 3, the grain minimum reference voltage (DRAM _ VREF _ Min) of the DDR4 memory is obtained, that is, step S101 may be specifically implemented by the following processes:
step S1011: setting a minimum reference voltage of a set of reference voltage values as a temporary reference voltage for the electronic device.
In particular implementations, the DDR4 controller may set the temporary grain reference voltage (DRAM _ VREF _ Temp) of the DDR4 memory to a settable minimum reference voltage in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the minimum reference voltage that can be set is x;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the minimum settable reference voltage is 0x 0.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
Step S1012: and performing read-write verification on the electronic equipment.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, if the read-write data are consistent, the read-write verification is successful, and the corresponding DRAM _ VREF _ Temp value is available, and executing step S1013; if the read/write data is inconsistent, the read/write verification fails, indicating that the corresponding DRAM _ VREF _ Temp value is unusable, and step S1012 is executed by adding 1 to the DRAM _ VREF _ Temp value.
Step S1013: and determining the temporary reference voltage corresponding to successful read-write verification as the minimum reference voltage of the electronic equipment.
In particular implementation, the DDR4 controller determines the DRAM _ VREF _ Temp value as DRAM _ VREF _ Min.
Step S102: and traversing the reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment.
In the embodiment of the invention, the reference voltages in the reference voltage value set are arranged according to the descending order of the voltage values, and the electronic equipment is read and written from the last reference voltage in the reference voltage value set (namely, the maximum reference voltage in the reference voltage value set); when the read-write verification is successful, determining the last reference voltage as the maximum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on the penultimate reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
In specific implementation, as shown in fig. 4, taking the maximum reference voltage of the grain (DRAM _ VREF _ Max) of the DDR4 memory as an example, the step S102 may be specifically implemented by the following processes:
step S1021: setting a maximum reference voltage of a set of reference voltage values as a temporary reference voltage value for the memory.
In particular implementations, the DDR4 controller may set the DRAM _ VREF _ Temp of the DDR4 memory to a maximum reference voltage that may be set in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the maximum reference voltage that can be set is y;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the settable maximum reference voltage is 0x3 f.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
Step S1022: and performing read-write verification on the electronic equipment.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, if the read-write data are consistent, the read-write verification is successful, and the corresponding DRAM _ VREF _ Temp value is available, and executing the step S1023; if the read/write data is inconsistent, the read/write verification fails, indicating that the corresponding DRAM _ VREF _ Temp value is unavailable, and the DRAM _ VREF _ Temp value is decremented by 1, and step S1022 is performed.
Step S1023: and determining the temporary reference voltage corresponding to successful read-write verification as the maximum reference voltage of the electronic equipment.
In particular implementations, the DDR4 controller determines the DRAM _ VREF _ Temp value to be DRAM _ VREF _ Max.
Step S103: determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
In an embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
In specific implementation, taking the grain reference voltage Training (DRAM _ VREF _ Training) of the DDR4 memory as an example, the average value of the DRAM _ VREF _ Min and the DRAM _ VREF _ Max obtained in the above steps is usually determined as the grain reference voltage (DRAM _ VREF) of the DDR4 memory, that is, DRAM _ VREF is (DRAM _ VREF _ Min + DRAM _ VREF _ Max)/2.
By adopting the method of the embodiment of the invention, the minimum reference voltage of the electronic equipment is obtained in a mode of increasing the reference voltage and the maximum reference voltage of the electronic equipment is obtained in a mode of decreasing the reference voltage, so that the reference voltage determined based on the minimum reference voltage and the maximum reference voltage can adapt to the influence brought by different external environments, the problem of unstable reference voltage boundary is avoided, the reference voltage value is more accurate, and the system stability of the electronic equipment is improved.
Example two
An embodiment of the present invention provides a reference voltage determining method, as shown in fig. 1, the method includes the following steps:
step S101: and traversing the reference voltages in the reference voltage value set in an incremental mode to obtain the minimum reference voltage of the electronic equipment.
In the embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, and read-write verification is performed on the electronic device starting from the first reference voltage in the reference voltage value set (i.e. the minimum reference voltage in the reference voltage value set); when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
In specific implementation, the technical solution of the embodiment of the present invention may be specifically described by taking the physical layer reference voltage Training (PHY _ VREF _ Training) of the DDR4 memory as an example.
As shown in fig. 2, before performing the reference voltage training, the method further includes the initialization of the DDR4 memory and the initialization calibration of the DDR4 memory;
the DDR4 memory initialization includes at least one of: writing a register to be configured into the DDR controller and the PHY; starting the DDR controller; and initialization of the DDR controller and PHY.
The initial calibration of the DDR4 memory includes at least one of: gating training (GateTraining), Write calibration (Write Leveling), and Read calibration (Read Leveling).
Wherein, the bidirectional Data (Data Input/Output, DQ) is a bidirectional Data bus; a bidirectional data Strobe (DQS) is used to control the direction of the DQS. Gate tracking is used to align the gating (Gate) signal with DQS; write Leveling is used to align the DQS with the Clock (CLK) signal; the Read level is used to adjust the positions of the DQS and the DQS to be optimal, for example, the Read level may generate a phase difference of 90 ° between the DQS and the DQS, so that the edge of the DQS may sample at the middle position of the DQ, and the validity of the sampled data is ensured, so that the sampling window is optimal.
As shown in fig. 3, the physical layer minimum reference voltage (PHY _ VREF _ Min) of the DDR4 memory is obtained, that is, step S101 may be specifically implemented by the following processes:
step S1011: setting a minimum reference voltage of a set of reference voltage values as a temporary reference voltage for the electronic device.
In particular implementations, the DDR4 controller may set the temporary physical layer reference voltage (PHY _ VREF _ Temp) of the DDR4 memory to a settable minimum reference voltage in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the minimum reference voltage that can be set is x;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the minimum settable reference voltage is 0x 0.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
Step S1012: and performing read-write verification on the electronic equipment.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, if the read-write data are consistent, the read-write verification is successful, and the corresponding PHY _ VREF _ Temp value is available, and executing step S1013; if the read-write data is inconsistent, the read-write verification fails, indicating that the corresponding PHY _ VREF _ Temp value is unavailable, and step S1012 is performed by adding 1 to the PHY _ VREF _ Temp value.
Step S1013: and determining the temporary reference voltage corresponding to successful read-write verification as the minimum reference voltage of the electronic equipment.
In particular implementations, the DDR4 controller determines the PHY _ VREF _ Temp value as PHY _ VREF _ Min.
Step S102: and traversing the reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment.
In the embodiment of the invention, the reference voltages in the reference voltage value set are arranged according to the descending order of the voltage values, and the electronic equipment is read and written from the last reference voltage in the reference voltage value set (namely, the maximum reference voltage in the reference voltage value set); when the read-write verification is successful, determining the last reference voltage as the maximum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on the penultimate reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
In specific implementation, as shown in fig. 4, taking the maximum reference voltage (PHY _ VREF _ Max) of the physical layer of the DDR4 memory as an example, the step S102 may be specifically implemented by the following processes:
step S1021: setting a maximum reference voltage of a set of reference voltage values as a temporary reference voltage value for the electronic device.
In particular implementations, the DDR4 controller may set the PHY _ VREF _ Temp value of the DDR4 memory to a maximum reference voltage that may be set in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the maximum reference voltage that can be set is y;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the settable maximum reference voltage is 0x3 f.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
Step S1022: and performing read-write verification on the electronic equipment.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, if the read-write data are consistent, the read-write verification is successful, and the corresponding PHY _ VREF _ Temp value is available, and executing the step S1023; if the read/write data is inconsistent, the read/write verification fails, indicating that the corresponding PHY _ VREF _ Temp value is unavailable, and the PHY _ VREF _ Temp value is decremented by 1, and step S1022 is performed.
Step S1023: and determining the temporary reference voltage corresponding to successful read-write verification as the maximum reference voltage of the electronic equipment.
In particular implementations, the DDR4 controller determines the PHY _ VREF _ Temp value to be PHY _ VREF _ Max.
Step S103: determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
In an embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
In specific implementation, taking PHY _ VREF _ tracking of the DDR4 memory as an example, the average value of PHY _ VREF _ Min and PHY _ VREF _ Max obtained in the above steps is usually determined as the physical layer reference voltage (PHY _ VREF) of the DDR4 memory, that is, PHY _ VREF is (PHY _ VREF _ Min + PHY _ VREF _ Max)/2.
By adopting the method of the embodiment of the invention, the minimum reference voltage of the electronic equipment is obtained in a mode of increasing the reference voltage and the maximum reference voltage of the electronic equipment is obtained in a mode of decreasing the reference voltage, so that the reference voltage determined based on the minimum reference voltage and the maximum reference voltage can adapt to the influence brought by different external environments, the problem of unstable reference voltage boundary is avoided, the reference voltage value is more accurate, and the system stability of the electronic equipment is improved.
EXAMPLE III
An embodiment of the present invention provides a reference voltage determining method, as shown in fig. 1, the method includes the following steps:
step S101: and traversing the reference voltages in the reference voltage value set in an incremental mode to obtain the minimum reference voltage of the electronic equipment.
In the embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, and read-write verification is performed on the electronic device starting from the first reference voltage in the reference voltage value set (i.e. the minimum reference voltage in the reference voltage value set); when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
In specific implementation, the technical solution of the embodiment of the present invention can be specifically described by taking PHY _ VREF _ tracking of a DDR4 memory as an example.
As shown in fig. 2, before performing the reference voltage training, the method further includes the initialization of the DDR4 memory and the initialization calibration of the DDR4 memory;
the DDR4 memory initialization includes at least one of: writing a register to be configured into the DDR controller and the PHY; starting the DDR controller; and initialization of the DDR controller and PHY.
The initial calibration of the DDR4 memory includes at least one of: gate tracking, writelevel, Read level.
Wherein DQ is a bidirectional data bus; DQS is used to control the direction of DQ. The Gate tracking is used to align the Gate signal with the DQS; write Leveling is used to align the DQS with the CLK signal; the Read level is used for adjusting the positions of the DQS and the DQS to be optimal, for example, the Read level may generate a phase difference of 90 ° between the DQS and the DQS, so that the edge of the DQS may sample at the middle position of the DQS, and the validity of the sampled data is ensured, thereby optimizing the sampling window, and the Read level may adjust the positions of the DQS and the DQS in various ways, which is not particularly limited in the present invention.
As shown in fig. 3, the PHY _ VREF _ Min of the DDR4 memory is obtained, that is, the step S101 may be specifically implemented by the following processes:
step S1011: setting a minimum reference voltage of a set of reference voltage values as a temporary reference voltage for the electronic device.
In particular implementations, the DDR4 controller may set the PHY _ VREF _ Temp of the DDR4 memory to a settable minimum reference voltage in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the minimum reference voltage that can be set is x;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the minimum settable reference voltage is 0x 0.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
Step S1012: and performing read-write verification on the electronic equipment.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, if the read-write data are consistent, the read-write verification is successful, and the corresponding PHY _ VREF _ Temp value is available, and executing step S1013; if the read-write data is inconsistent, the read-write verification fails, indicating that the corresponding PHY _ VREF _ Temp value is unavailable, and step S1012 is performed by adding 1 to the PHY _ VREF _ Temp value.
Step S1013: and determining the temporary reference voltage corresponding to successful read-write verification as the minimum reference voltage of the electronic equipment.
In particular implementations, the DDR4 controller determines the PHY _ VREF _ Temp value as PHY _ VREF _ Min.
Step S102: and traversing the reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment.
In the embodiment of the invention, the reference voltages in the reference voltage value set are arranged according to the descending order of the voltage values, and the electronic equipment is read and written from the last reference voltage in the reference voltage value set (namely, the maximum reference voltage in the reference voltage value set); when the read-write verification is successful, determining the last reference voltage as the maximum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on the penultimate reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
In specific implementation, as shown in fig. 4, taking the PHY _ VREF _ Max of the DDR4 memory as an example, the step S102 may be implemented by the following steps:
step S1021: setting a maximum reference voltage of a set of reference voltage values as a temporary reference voltage value for the electronic device.
In particular implementations, the DDR4 controller may set the PHY _ VREF _ Temp value of the DDR4 memory to a maximum reference voltage that may be set in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the maximum reference voltage that can be set is y;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the settable maximum reference voltage is 0x3 f.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
Step S1022: and performing read-write verification on the electronic equipment.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, if the read-write data are consistent, the read-write verification is successful, and the corresponding PHY _ VREF _ Temp value is available, and executing the step S1023; if the read/write data is inconsistent, the read/write verification fails, indicating that the corresponding PHY _ VREF _ Temp value is unavailable, and the PHY _ VREF _ Temp value is decremented by 1, and step S1022 is performed.
Step S1023: and determining the temporary reference voltage corresponding to successful read-write verification as the maximum reference voltage of the electronic equipment.
In particular implementations, the DDR4 controller determines the PHY _ VREF _ Temp value to be PHY _ VREF _ Max.
Step S103: determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
In an embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
In specific implementation, taking PHY _ VREF _ tracking of the DDR4 memory as an example, the average value of PHY _ VREF _ Min and PHY _ VREF _ Max obtained in the above steps is usually determined as PHY _ VREF of the DDR4 memory, that is, PHY _ VREF is (PHY _ VREF _ Min + PHY _ VREF _ Max)/2.
In the embodiment of the present invention, the method further includes:
step S104: performing particle reference voltage training on the electronic device based on a reference voltage of the electronic device to determine a particle reference voltage of the electronic device.
In specific implementation, through the above steps, an optimal PHY _ VREF is determined, and DRAM _ VREF _ tracking is performed on the DDR4 memory according to the determined PHY _ VREF. The reason why one pass of DRAM _ VREF _ Training is performed again is that since the result of previously performing DRAM _ VREF _ Training is not based on the optimal PHY _ VREF, the obtained result is also not optimal. And performing DRAM _ VREF _ tracking based on the optimal PHY _ VREF, so that the optimal DRAM _ VREF can be determined, and the result of the DRAM _ VREF _ tracking is more accurate and reliable.
By adopting the method of the embodiment of the invention, the minimum reference voltage of the electronic equipment is obtained in a mode of increasing the reference voltage and the maximum reference voltage of the electronic equipment is obtained in a mode of decreasing the reference voltage, so that the reference voltage determined based on the minimum reference voltage and the maximum reference voltage can adapt to the influence brought by different external environments, the problem of unstable reference voltage boundary is avoided, the reference voltage value is more accurate, and the system stability of the electronic equipment is improved.
Example four
An embodiment of the present invention provides a reference voltage determining apparatus 50, as shown in fig. 5, where the reference voltage determining apparatus 50 includes: an acquisition unit 501 and a first determination unit 502; wherein,
the obtaining unit 501 is configured to incrementally traverse reference voltages in a set of reference voltage values to obtain a minimum reference voltage of the electronic device.
In the embodiment of the present invention, the reference voltages in the reference voltage value set are arranged in ascending order of voltage values, and read-write verification is performed on the electronic device starting from the first reference voltage in the reference voltage value set (i.e. the minimum reference voltage in the reference voltage value set); when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
In specific implementation, the technical solution of the embodiment of the present invention can be specifically described by taking PHY _ VREF _ tracking of a DDR4 memory as an example.
As shown in fig. 2, before performing the reference voltage training, the method further includes the initialization of the DDR4 memory and the initialization calibration of the DDR4 memory;
the DDR4 memory initialization includes at least one of: writing a register to be configured into the DDR controller and the PHY; starting the DDR controller; and initialization of the DDR controller and PHY.
The initial calibration of the DDR4 memory includes at least one of: gate tracking, writelevel, Read level.
Wherein DQ is a bidirectional data bus; DQS is used to control the direction of DQ. The Gate tracking is used to align the Gate signal with the DQS; write Leveling is used to align the DQS with the CLK signal; the Read level is used for adjusting the positions of the DQS and the DQS to be optimal, for example, the Read level may generate a phase difference of 90 ° between the DQS and the DQS, so that the edge of the DQS may sample at the middle position of the DQS, and the validity of the sampled data is ensured, thereby optimizing the sampling window, and the Read level may adjust the positions of the DQS and the DQS in various ways, which is not particularly limited in the present invention.
As shown in fig. 6, taking the PHY _ VREF _ Min of the DDR4 memory as an example, the obtaining unit 501 may specifically include: the electronic device comprises a setting module 5011, a checking module 5012 and a determining module 5013, wherein the setting module 5011 is used for setting a minimum reference voltage in a reference voltage value set as a temporary reference voltage of the electronic device.
In particular implementations, the DDR4 controller may set the PHY _ VREF _ Temp of the DDR4 memory to a settable minimum reference voltage in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the minimum reference voltage that can be set is x;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the minimum settable reference voltage is 0x 0.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
The verification module 5012 is configured to perform read-write verification on the electronic device.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, wherein if the read-write data are consistent, the read-write verification is successful, and the determination module 5013 executes processing, which indicates that a corresponding PHY _ VREF _ Temp value is available; if the read-write data is inconsistent, the read-write verification fails, which indicates that the corresponding PHY _ VREF _ Temp value is unavailable, and the PHY _ VREF _ Temp value is added by 1 to execute the processing of the verification module 5012.
The determining module 5013 is configured to determine the temporary reference voltage corresponding to the successful read/write verification as the minimum reference voltage of the electronic device.
In particular implementations, the DDR4 controller determines the PHY _ VREF _ Temp value as PHY _ VREF _ Min.
The obtaining unit 501 is further configured to traverse reference voltages in a set of reference voltage values in a decreasing manner, and obtain a maximum reference voltage of the electronic device.
In the embodiment of the invention, the reference voltages in the reference voltage value set are arranged according to the descending order of the voltage values, and the electronic equipment is read and written from the last reference voltage in the reference voltage value set (namely, the maximum reference voltage in the reference voltage value set); when the read-write verification is successful, determining the last reference voltage as the maximum reference voltage of the electronic equipment; when the read-write verification fails, performing the read-write verification on the electronic equipment based on the penultimate reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
In specific implementation, as shown in fig. 6, taking the obtaining of the PHY _ VREF _ Max of the DDR4 memory as an example, the obtaining unit 501 may specifically include: a module 5011, a verification module 5012, and a determination module 5013 are provided, wherein,
the setting module 5011 is further configured to set a maximum reference voltage of the set of reference voltage values as a temporary reference voltage value of the electronic device.
In particular implementations, the DDR4 controller may set the PHY _ VREF _ Temp value of the DDR4 memory to a maximum reference voltage that may be set in a set of reference voltage values; for example, when the reference voltage is 0x 0-0 x3f, the reference voltage can be set to x-y, and x is greater than 0x0 and y is less than 0x3 f; it is understood that the reference voltage value has an effective range of x to y, wherein 0x0 to x and y to 0x3f remain unused; at this time, the maximum reference voltage that can be set is y;
for another example, when the reference voltages are 0x 0-0 x3f and 0x 0-0 x3f are all settable reference voltages, the settable maximum reference voltage is 0x3 f.
It should be noted that the voltage of DDR4 is generally 1.2V, the reference voltage range is generally 45% to 92% of the voltage of DDR4, and according to the standard protocol of DDR4, the values of 0x0 to 0x3f can be adopted to correspond to the specific values of the reference voltage. Wherein, the larger the value corresponding to 0x 0-0 x3f is, the larger the specific value of the reference voltage is.
The verification module 5012 is configured to perform read-write verification on the electronic device.
Performing data read-write verification on the DDR4 memory through the DDR4 controller, wherein if the read-write data are consistent, the read-write verification is successful, and the determination module 5013 executes processing, which indicates that a corresponding PHY _ VREF _ Temp value is available; if the read-write data is inconsistent, the read-write verification fails, which indicates that the corresponding PHY _ VREF _ Temp value is unavailable, the PHY _ VREF _ Temp value is decremented by 1, and the processing of the verification module 5012 is executed.
The determining module 5013 is further configured to determine the temporary reference voltage corresponding to the successful read/write verification as the maximum reference voltage of the electronic device.
In particular implementations, the DDR4 controller determines the PHY _ VREF _ Temp value to be PHY _ VREF _ Max.
The first determining unit 502 is configured to determine a reference voltage of the electronic device according to a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device.
In an embodiment of the present invention, the determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes: determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
In specific implementation, taking PHY _ VREF _ tracking of the DDR4 memory as an example, the average of PHY _ VREF _ Min and PHY _ VREF _ Max is usually determined as PHY _ VREF of the DDR4 memory, i.e., PHY _ VREF is (PHY _ VREF _ Min + PHY _ VREF _ Max)/2.
In this embodiment of the present invention, the reference voltage determining apparatus 50 further includes:
a second determining unit 503, configured to perform a particle reference voltage training on the electronic device based on the reference voltage of the electronic device, so as to determine the particle reference voltage of the electronic device.
In specific implementation, after the above processing, an optimal PHY _ VREF is determined, and DRAM _ VREF _ tracking is performed on the DDR4 memory according to the determined PHY _ VREF. The reason why one pass of DRAM _ VREF _ Training is performed again is that since the result of previously performing DRAM _ VREF _ Training is not based on the optimal PHY _ VREF, the obtained result is also not optimal. And performing DRAM _ VREF _ tracking based on the optimal PHY _ VREF, so that the optimal DRAM _ VREF can be determined, and the result of the DRAM _ VREF _ tracking is more accurate and reliable.
By adopting the device provided by the embodiment of the invention, the minimum reference voltage of the electronic equipment is obtained in a mode of increasing the reference voltage progressively, and the maximum reference voltage of the electronic equipment is obtained in a mode of decreasing the reference voltage progressively, so that the reference voltage determined based on the minimum reference voltage and the maximum reference voltage can adapt to the influence brought by different external environments, the problem of unstable reference voltage boundary is avoided, the reference voltage value is more accurate, and the system stability of the electronic equipment is improved.
EXAMPLE five
Based on the foregoing embodiments, a fifth embodiment of the present invention further provides another reference voltage determining apparatus 70, as shown in fig. 7, including a processor 702 and a memory 701 for storing a computer program capable of running on the processor 702; wherein the processor 702 is configured to implement, when running the computer program, the following:
traversing reference voltages in the reference voltage value set in an increasing mode to obtain the minimum reference voltage of the electronic equipment;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
In this embodiment of the present invention, the processor 702 incrementally traverses the reference voltages in the set of reference voltage values to obtain the minimum reference voltage of the electronic device, including:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the minimum reference voltage of the electronic equipment;
the reference voltage value sets are arranged according to the ascending order of the reference voltage values.
In this embodiment of the present invention, the processor 702 incrementally traverses the reference voltages in the set of reference voltage values to obtain the minimum reference voltage of the electronic device, including:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
In this embodiment of the present invention, the traversing, by the processor 702, the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device includes:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the maximum reference voltage of the electronic equipment;
wherein the reference voltage value sets are arranged in descending order of magnitude of the reference voltage values.
In this embodiment of the present invention, the traversing, by the processor 702, the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device includes:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the maximum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
In this embodiment of the present invention, after the processor 702 determines the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further includes:
performing particle reference voltage training on the electronic device based on a reference voltage of the electronic device to determine a particle reference voltage of the electronic device.
In this embodiment of the present invention, the determining, by the processor 702, the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes:
determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
The processor 702 may be an integrated circuit chip having signal processing capabilities. In implementation, the steps of the above method may be implemented by integrated logic circuits of hardware or instructions in the form of software in the processor 702. The processor 702 described above may be a general purpose processor, a DSP, or other programmable logic device, discrete gate or transistor logic device, discrete hardware components, or the like. The processor 702 may implement or perform the methods, steps, and logic blocks disclosed in embodiments of the present invention. A general purpose processor may be a microprocessor or any conventional processor or the like. The steps of the method disclosed by the embodiment of the invention can be directly implemented by a hardware decoding processor, or can be implemented by combining hardware and software modules in the decoding processor. The software modules may be located in a storage medium located in the memory 701, and the processor 702 reads the information in the memory 701 to complete the steps of the foregoing method in combination with the hardware thereof.
It will be appreciated that the memory of embodiments of the invention, memory 701, may be either volatile memory or nonvolatile memory, and may include both volatile and nonvolatile memory. The nonvolatile Memory may be a Read Only Memory (ROM), a Programmable Read Only Memory (PROM), an Erasable Programmable Read Only Memory (EPROM), an Electrically Erasable Programmable Read Only Memory (EEPROM), a magnetic random access Memory (FRAM), a Flash Memory (Flash Memory), a magnetic surface Memory, an optical Disc, or a Compact Disc Read Only Memory (CD-ROM); the magnetic surface storage may be disk storage or tape storage. Volatile Memory can be Random Access Memory (RAM), which acts as external cache Memory. By way of illustration and not limitation, many forms of RAM are available, such as Static Random Access Memory (SRAM), Synchronous Static Random Access Memory (SSRAM), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SDRAM), Double Data Rate Synchronous Dynamic Random Access Memory (DDRSDRAM, Double Data Synchronous Random Access Memory), Enhanced Synchronous Dynamic Random Access Memory (ESDRAM, Enhanced Synchronous Dynamic Random Access Memory), Synchronous link Dynamic Random Access Memory (SLDRAM, Synchronous Dynamic Random Access Memory), Direct Memory bus (DRmb Access Memory, Random Access Memory). The described memory for embodiments of the present invention is intended to comprise, without being limited to, these and any other suitable types of memory.
Here, it should be noted that: the description of the embodiment of the apparatus for detecting media playing behavior is similar to the description of the method, and has the same beneficial effects as the embodiment of the method, and therefore, the description thereof is omitted. For technical details that are not disclosed in the terminal embodiment of the present invention, those skilled in the art should refer to the description of the method embodiment of the present invention to understand that, for brevity, detailed description is omitted here.
EXAMPLE six
In an exemplary embodiment, a storage medium, specifically a computer-readable storage medium, is further provided in an embodiment of the present invention, and includes, for example, a memory 701 storing a computer program, where the computer program is processed by a processor 702 to implement:
in the embodiment of the present invention, the processor 702 incrementally traverses the reference voltages in the reference voltage value set to obtain the minimum reference voltage of the electronic device;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
In this embodiment of the present invention, the processor 702 incrementally traverses the reference voltages in the set of reference voltage values to obtain the minimum reference voltage of the electronic device, including:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the minimum reference voltage of the electronic equipment;
the reference voltage value sets are arranged according to the ascending order of the reference voltage values.
In this embodiment of the present invention, the processor 702 incrementally traverses the reference voltages in the set of reference voltage values to obtain the minimum reference voltage of the electronic device, including:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
In this embodiment of the present invention, the traversing, by the processor 702, the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device includes:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the maximum reference voltage of the electronic equipment;
wherein the reference voltage value sets are arranged in descending order of magnitude of the reference voltage values.
In this embodiment of the present invention, the traversing, by the processor 702, the reference voltages in the reference voltage value set in a decreasing manner to obtain the maximum reference voltage of the electronic device includes:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the maximum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
In this embodiment of the present invention, after the processor 702 determines the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further includes:
performing particle reference voltage training on the electronic device based on a reference voltage of the electronic device to determine a particle reference voltage of the electronic device.
In this embodiment of the present invention, the determining, by the processor 702, the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device includes:
determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
The storage medium may be FRAM, ROM, PROM, EPROM, EEPROM, Flash Memory, magnetic surface Memory, optical disk, or CD-ROM, among others.
Here, it should be noted that: the above description of the storage medium embodiment is similar to the above description of the method, and has the same beneficial effects as the method embodiment, and therefore, the description thereof is omitted. For technical details that are not disclosed in the terminal embodiment of the present invention, those skilled in the art should refer to the description of the method embodiment of the present invention to understand that, for brevity, detailed description is omitted here.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for reference voltage determination, the method comprising:
traversing reference voltages in the reference voltage value set in an increasing mode to obtain the minimum reference voltage of the electronic equipment;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
determining a reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device.
2. The method of claim 1, wherein incrementally traversing the reference voltages from the set of reference voltage values to obtain a minimum reference voltage for the electronic device comprises:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the minimum reference voltage of the electronic equipment;
the reference voltage value sets are arranged according to the ascending order of the reference voltage values.
3. The method of claim 2, wherein incrementally traversing the reference voltages from the set of reference voltage values to obtain a minimum reference voltage for the electronic device comprises:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the minimum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the minimum reference voltage of the electronic equipment.
4. The method of claim 1, wherein traversing reference voltages in a set of reference voltage values in a decreasing manner to obtain a maximum reference voltage of the electronic device comprises:
traversing the reference voltage in the reference voltage value set, and performing read-write verification on the electronic equipment;
determining the first reference voltage which is successfully read-write verified as the maximum reference voltage of the electronic equipment;
wherein the reference voltage value sets are arranged in descending order of magnitude of the reference voltage values.
5. The method of claim 4, wherein traversing reference voltages in a set of reference voltage values in a decreasing manner to obtain a maximum reference voltage of the electronic device comprises:
performing read-write verification on the electronic equipment based on a first reference voltage in the reference voltage value set;
when the read-write verification is successful, determining a first reference voltage as the maximum reference voltage of the electronic equipment;
when the read-write verification fails, performing the read-write verification on the electronic equipment based on a second reference voltage in the reference voltage value set until the read-write verification is successful; and determining the reference voltage corresponding to the successful read-write verification as the maximum reference voltage of the electronic equipment.
6. The method of any of claims 1 to 5, wherein after determining the reference voltage of the electronic device according to the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device, the method further comprises:
performing particle reference voltage training on the electronic device based on a reference voltage of the electronic device to determine a particle reference voltage of the electronic device.
7. The method of any of claims 1 to 5, wherein determining the reference voltage of the electronic device from the minimum reference voltage of the electronic device and the maximum reference voltage of the electronic device comprises:
determining an average of a minimum reference voltage of the electronic device and a maximum reference voltage of the electronic device as a reference voltage of the electronic device.
8. An apparatus for reference voltage determination, the apparatus comprising:
the acquisition module is used for traversing reference voltages in a reference voltage value set in an increasing mode to acquire the minimum reference voltage of the electronic equipment;
traversing reference voltages in the reference voltage value set in a descending mode to obtain the maximum reference voltage of the electronic equipment;
the determining module is used for determining the reference voltage of the electronic equipment according to the minimum reference voltage of the electronic equipment and the maximum reference voltage of the electronic equipment.
9. A reference voltage determination apparatus comprising a processor and a memory for storing a computer program capable of running on the processor; wherein the processor is adapted to perform the steps of the method of any one of claims 1 to 7 when running the computer program.
10. A storage medium having a computer program stored thereon, the computer program, when being executed by a processor, performing the steps of the method of any one of claims 1 to 7.
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