CN111371426A - Air-gap type shear wave resonator based on lithium niobate and preparation method thereof - Google Patents
Air-gap type shear wave resonator based on lithium niobate and preparation method thereof Download PDFInfo
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- CN111371426A CN111371426A CN202010368415.XA CN202010368415A CN111371426A CN 111371426 A CN111371426 A CN 111371426A CN 202010368415 A CN202010368415 A CN 202010368415A CN 111371426 A CN111371426 A CN 111371426A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 17
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract 2
- 238000005498 polishing Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000019687 Lamb Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses an air-gap type shear wave resonator based on lithium niobate and a preparation method thereof. The resonator comprises a silicon substrate, a silicon oxide protective layer, a silicon cavity, a lithium niobate piezoelectric material and a top electrode; the upper surface of the silicon substrate is sunken inwards to form a groove, and a silicon oxide protective layer is deposited on the side wall and the bottom surface of the groove; the silicon substrate is connected with a lithium niobate piezoelectric material, and the lithium niobate piezoelectric material covers the groove to form a silicon cavity; and the lithium niobate piezoelectric material is provided with a through hole so that the silicon cavity is communicated with the outside. The piezoelectric material of the air-gap type shear wave resonator is prepared by ion implantation and bonding processes, and an air cavity below the piezoelectric material is obtained by a sacrificial layer release method. Compared with a back silicon etching type shear wave resonator, the shear wave resonator prepared by the method has high mechanical strength and simple steps, the yield of resonator devices is improved, and the electromechanical coupling coefficient of lithium niobate is high. The method can be applied to the manufacture of high-frequency broadband and low-loss filters.
Description
Technical Field
The invention relates to the technical field of film bulk acoustic resonators, in particular to an air-gap type shear wave resonator based on lithium niobate and a preparation method thereof.
Background
At present, the thin film bulk acoustic filter is already applied to a 5G filter on a large scale, but the thin film bulk acoustic filter based on aluminum nitride still has various defects. The maximum electromechanical coupling coefficient of the aluminum nitride theory is only about 6%, so that the thin film bulk acoustic wave filter based on the aluminum nitride is not suitable for being applied to a broadband filter. And it is difficult to grow high quality, low defect aluminum nitride crystal material on top of the seed layer material. Because the electromechanical coupling coefficient of lithium niobate is far higher than that of aluminum nitride, the lithium niobate shear wave resonator can be used for preparing a high-frequency broadband filter. However, the existing method for preparing the lithium niobate shear wave resonator is basically based on back silicon etching, namely directly preparing the lithium niobate resonator on the surface of a silicon substrate by Ploss (Electronics Letters, 2018, 55(2): 98-100) and the like, and then etching the silicon substrate by using xenon difluoride.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a lithium niobate-based air-gap type shear wave resonator and a preparation method thereof.
The purpose of the invention is realized by at least one of the following technical solutions.
Based on the above, the invention provides the air-gap type shear wave resonator based on the lithium niobate and the preparation method thereof, and the lithium niobate resonator forms shear wave resonance and simultaneously reduces the interference of a transverse vibration mode through the optimized design on the aspects of electrode size, interdigital electrode spacing, piezoelectric material size and the like. Firstly, depositing a protective layer and a sacrificial layer material on the surface of a high-resistance silicon wafer in sequence, and then chemically and mechanically polishing the silicon wafer. Transferring the lithium niobate thin film to the polished high-resistance silicon wafer by an ion implantation and wafer bonding method, and then sputtering a metal interdigital electrode on the surface of the lithium niobate thin film by utilizing a stripping process. And finally, removing the sacrificial layer by using a dry etching or wet etching method.
The invention provides an air-gap type shear wave resonator based on lithium niobate. The resonator is composed of a top interdigital electrode and a lithium niobate piezoelectric material. Wherein the lithium niobate piezoelectric material and the protective layer at the bottom together form an air cavity. The lithium niobate-based air-gap type shear wave resonator provided by the invention only has a top electrode without a bottom electrode, and the resonator is composed of a piezoelectric material lithium niobate and the top electrode. Wherein the piezoelectric material is located over the air cavity.
The invention provides a lithium niobate-based air-gap type shear wave resonator, which comprises a silicon substrate, a silicon oxide protective layer, a silicon cavity, a lithium niobate piezoelectric material and a top electrode, wherein the silicon substrate is provided with a silicon oxide protective layer; the upper surface of the silicon substrate is recessed inwards to form a groove, and the silicon oxide protective layer is deposited on the side wall and the bottom surface of the groove; the lithium niobate piezoelectric material covers the upper part of the groove to form a silicon cavity; the lithium niobate piezoelectric material is provided with a through hole which is used for releasing a sacrificial layer material; the upper surface of the lithium niobate piezoelectric material is connected with the top electrode.
Further, the top electrode is one of Pt, Mo, W, Ti, Al, Au, Ag, etc.; the thickness of the top electrode is 60 nm-700 nm.
Preferably, the top electrode is one of Pt, Mo, Ag, Al, Au.
Further, the thickness of the silicon oxide protective layer is 1-3 μm.
Preferably, the substrate is a single-side polished high-resistance silicon wafer.
Further, the lithium niobate piezoelectric material is Z-tangential or Y-tangential.
Further, the thickness of the lithium niobate piezoelectric material (piezoelectric layer) is 100 nm-5 μm.
Further, the top electrode is an interdigital electrode, and positive and negative interdigital electrodes are alternately arranged; the distance between the adjacent interdigital electrodes is 500 nm-5 μm, the width of the top electrode is 500 nm-3 μm, and the length of the top electrode is 48 μm-300 μm.
Further, the depth of the silicon cavity (air cavity) is 2 μm to 30 μm.
Further, the spacing between adjacent top electrodes is greater than the thickness of the lithium niobate piezoelectric material.
The invention provides a method for preparing the lithium niobate-based air-gap type shear wave resonator, which comprises the following steps of:
(1) cleaning and drying the silicon substrate;
(2) preparing a groove on the upper surface of the silicon substrate by using an inductively coupled plasma or reactive ion etching method;
(3) depositing a silicon oxide protective layer on the bottom surface and the side wall of the groove in the step (2), and then depositing a sacrificial layer on the surface of the silicon oxide protective layer; carrying out chemical mechanical polishing on the sacrificial layer, and controlling the root-mean-square roughness of the polished wafer to be less than 0.5 nm;
(4) firstly, performing ion implantation on a lithium niobate crystal, transferring (bonding) a lithium niobate piezoelectric material (a lithium niobate piezoelectric film) to the upper surface of a silicon substrate by using an ion implantation and bonding method, and annealing;
(5) preparing a top electrode (interdigital electrode) on the surface of the lithium niobate piezoelectric material, and punching a through hole in the lithium niobate piezoelectric material, wherein the through hole is positioned outside the area of the top electrode;
(6) and releasing the sacrificial layer by wet etching or dry etching to obtain the air-gap type shear wave resonator based on the lithium niobate.
Further, the method for preparing the groove in the step (2) is an inductive coupling plasma method or a reactive ion etching method; in the step (3), the polishing method is chemical mechanical polishing, and the roughness of the polished sacrificial layer is less than 0.5 nm; and (3) the sacrificial layer is more than one of silicon oxide, phosphorosilicate glass, polycrystalline silicon, organic polymer and metal material.
Preferably, the material of the sacrificial layer in the step (3) is polysilicon prepared by using plasma enhanced chemical vapor deposition.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) in the preparation method provided by the invention, the sacrificial layer is introduced firstly and then the release method is adopted, so that the etched area is limited to the part for filling the sacrificial layer, the transverse corrosion during back silicon etching is avoided, the mechanical strength and the reliability of the resonator are further improved, the yield of the product is improved, and the method is expected to be applied to the large-scale manufacture of the resonator;
(2) according to the preparation method provided by the invention, the influence of a laterally propagated lamb wave parasitic mode is reduced by optimally designing the size of the electrodes, the electrode spacing and the thickness of the lithium niobate piezoelectric material and selecting a proper crystal tangential direction, so that the resonator only works in a shear wave mode, and the quality factor of the resonator is improved.
Drawings
Fig. 1 is a sectional view of a finally prepared lithium niobate shear wave resonator of example 1;
FIG. 2 is a silicon substrate after chemical mechanical polishing of example 1;
FIG. 3 is a schematic view of ion implantation of a lithium niobate crystal according to example 1;
FIG. 4 is a schematic view showing bonding of a lithium niobate crystal and a silicon substrate in example 1;
fig. 5 is a schematic diagram of the release of the sacrificial layer of example 1.
Detailed Description
The following examples are presented to further illustrate the practice of the invention, but the practice and protection of the invention is not limited thereto. It is noted that the processes described below, if not specifically described in detail, are all realizable or understandable by those skilled in the art with reference to the prior art.
Example 1
The present embodiment provides a lithium niobate-based air-gap type shear wave resonator, and as shown in fig. 1, the filter includes a silicon substrate 101, a silicon oxide protective layer 102, a silicon cavity 107, a lithium niobate piezoelectric material 104, a top electrode 105, and a through hole 106.
The top electrode is made of metal material aluminum, and the piezoelectric material is Z-tangential lithium niobate.
The top electrode thickness is 100 nm, and the width is 500 nm, and length is 160 um, and the electrode spacing is 5 um, and piezoelectric material lithium niobate thickness is 400 nm. In order for a lithium niobate resonator to operate only in shear wave mode, the spacing of the electrodes must be much larger than the thickness of the piezoelectric material.
The present embodiment also provides a method for preparing a lithium niobate shear wave resonator as described above, including the following steps:
(1) selecting (111) crystal face high-resistance Si as a substrate, and then sequentially cleaning with acetone ultrasonic, sulfuric acid and hydrogen peroxide mixed solution and drying.
(2) And etching the wafer by utilizing the inductively coupled plasma to form a silicon cavity, wherein the depth of the silicon cavity is about 3 um.
(3) As shown in fig. 2, a 1 um thick silicon oxide protective layer 102 is prepared by thermal oxidation, 5 um thick polysilicon 103 is deposited in the silicon cavity by plasma enhanced chemical vapor deposition, the polysilicon surrounding the silicon cavity is etched by plasma etching, and finally the silicon substrate is polished until the sacrificial layer is flush with the surrounding silicon surface. The root mean square roughness of the silicon wafer must be less than 0.5 nm.
(4) As shown in FIG. 3, using He+The lithium niobate 104 was ion-implanted with an energy of 380 KeV for 7 hours. And in the injection process, the lithium niobate is firmly adhered to the bracket by using silver adhesive.
(5) As shown in fig. 4, the above lithium niobate crystal is directly bonded to a polished silicon substrate, and then annealed at a high temperature.
(6) Because the lithium niobate after ion implantation releases helium gas at high temperature, the lithium niobate crystals of the ion implantation part and the non-implantation part are broken, and redundant lithium niobate crystals are removed.
(7) Firstly, depositing photoresist on a lithium niobate thin film, then photoetching and developing, then depositing metal aluminum by using a magnetron sputtering method, and then placing the device in a degumming solution.
(8) As shown in fig. 5, a via 106 is drilled in the lithium niobate crystal, taking care that the via must be located outside the top electrode area. The sacrificial layer 103 is then etched using xenon difluoride, and in order to protect the silicon substrate around the sacrificial layer from corrosion, a protective layer 102 of silicon dioxide is deposited around the sacrificial layer. The sacrificial layer is released to form the air cavity 107.
The above examples are only preferred embodiments of the present invention, which are intended to be illustrative and not limiting, and those skilled in the art should understand that they can make various changes, substitutions and alterations without departing from the spirit and scope of the invention.
Claims (10)
1. An air-gap type shear wave resonator based on lithium niobate is characterized by comprising a silicon substrate, a silicon oxide protective layer, a silicon cavity, a lithium niobate piezoelectric material and a top electrode; the upper surface of the silicon substrate is recessed inwards to form a groove, and the silicon oxide protective layer is deposited on the side wall and the bottom surface of the groove; the silicon substrate is connected with a lithium niobate piezoelectric material, and the lithium niobate piezoelectric material covers the groove to form a silicon cavity; the lithium niobate piezoelectric material is provided with a through hole so that the silicon cavity is communicated with the outside; the upper surface of the lithium niobate piezoelectric material is connected with the top electrode.
2. The lithium niobate-based air-gap type shear wave resonator of claim 1, wherein the top electrode is one of Pt, Mo, Ag, Al, Au; the thickness of the top electrode is 60 nm-700 nm.
3. The lithium niobate-based air gap-type shear wave resonator of claim 1, wherein the silicon oxide protective layer has a thickness of 1 μm to 3 μm.
4. The lithium niobate-based air gap-type shear wave resonator of claim 1, wherein the lithium niobate piezoelectric material is Z-tangential or Y-tangential.
5. The lithium niobate-based air-gap type shear wave resonator of claim 1, wherein the thickness of the lithium niobate piezoelectric material is 100 nm to 5 μm.
6. The lithium niobate-based air-gap type shear wave resonator of claim 1, wherein the top electrode is an interdigital electrode, and positive and negative electrodes are alternately arranged; the distance between the adjacent interdigital electrodes is 500 nm-5 μm, the width of the top electrode is 500 nm-3 μm, and the length of the top electrode is 48 μm-300 μm.
7. The lithium niobate-based air-gap type shear wave resonator of claim 1, wherein the silicon cavity has a depth of 2 μm to 30 μm.
8. The lithium niobate-based air-gap type shear wave resonator of claim 1, wherein a spacing of adjacent top electrodes is greater than a thickness of the lithium niobate piezoelectric material.
9. A method of manufacturing a lithium niobate-based air gap type shear wave resonator of any one of claims 1 to 8, comprising the steps of:
(1) cleaning and drying the silicon substrate;
(2) preparing a groove on the upper surface of the silicon substrate;
(3) depositing a silicon oxide protective layer on the bottom surface and the side wall of the groove in the step (2), and then depositing a sacrificial layer on the surface of the silicon oxide protective layer; polishing the sacrificial layer;
(4) transferring the lithium niobate piezoelectric material to the upper surface of the silicon substrate by using an ion implantation and bonding method;
(5) preparing a top electrode on the surface of the lithium niobate piezoelectric material, and punching a through hole in the lithium niobate piezoelectric material, wherein the through hole is positioned outside the area of the top electrode;
(6) and releasing the sacrificial layer by wet etching or dry etching to obtain the air-gap type shear wave resonator based on the lithium niobate.
10. The method for preparing a lithium niobate-based air-gap type shear wave resonator according to claim 9, wherein the method for preparing the groove in the step (2) is an inductively coupled plasma etching method or a reactive ion etching method; in the step (3), the polishing method is chemical mechanical polishing, and the roughness of the polished sacrificial layer is less than 0.5 nm; and (3) the sacrificial layer is one or more of silicon oxide, phosphorosilicate glass, polycrystalline silicon, organic polymer and metal material.
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| CN112688657A (en) * | 2020-12-25 | 2021-04-20 | 中国科学院上海微***与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| CN112953449A (en) * | 2021-03-04 | 2021-06-11 | 偲百创(深圳)科技有限公司 | Method for manufacturing acoustic resonator with transverse excitation of shear mode |
| CN112953454A (en) * | 2021-03-16 | 2021-06-11 | 电子科技大学 | High-frequency low-loss surface acoustic wave resonator and preparation method thereof |
| CN113595522A (en) * | 2021-07-13 | 2021-11-02 | 重庆胜普电子有限公司 | Method for manufacturing aluminum nitride lamb wave resonator |
| CN113922784A (en) * | 2021-10-19 | 2022-01-11 | 中国科学院上海微***与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| WO2022022264A1 (en) * | 2020-07-31 | 2022-02-03 | 中芯集成电路（宁波）有限公司上海分公司 | Surface acoustic wave resonator and production method therefor |
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| WO2022022264A1 (en) * | 2020-07-31 | 2022-02-03 | 中芯集成电路（宁波）有限公司上海分公司 | Surface acoustic wave resonator and production method therefor |
| CN112688657A (en) * | 2020-12-25 | 2021-04-20 | 中国科学院上海微***与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| CN112953449A (en) * | 2021-03-04 | 2021-06-11 | 偲百创(深圳)科技有限公司 | Method for manufacturing acoustic resonator with transverse excitation of shear mode |
| CN112953454A (en) * | 2021-03-16 | 2021-06-11 | 电子科技大学 | High-frequency low-loss surface acoustic wave resonator and preparation method thereof |
| CN112953454B (en) * | 2021-03-16 | 2022-10-11 | 电子科技大学 | High-frequency low-loss surface acoustic wave resonator and preparation method thereof |
| CN113595522A (en) * | 2021-07-13 | 2021-11-02 | 重庆胜普电子有限公司 | Method for manufacturing aluminum nitride lamb wave resonator |
| CN113922784A (en) * | 2021-10-19 | 2022-01-11 | 中国科学院上海微***与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| CN113922784B (en) * | 2021-10-19 | 2024-04-05 | 中国科学院上海微***与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| CN115697016A (en) * | 2022-12-28 | 2023-02-03 | 中北大学 | Based on d 15 And d 22 Interdigital piezoelectric vibration sensor and preparation method thereof |
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