CN111368740B - Flexible identification sensor and manufacturing method thereof - Google Patents
Flexible identification sensor and manufacturing method thereof Download PDFInfo
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- CN111368740B CN111368740B CN202010147870.7A CN202010147870A CN111368740B CN 111368740 B CN111368740 B CN 111368740B CN 202010147870 A CN202010147870 A CN 202010147870A CN 111368740 B CN111368740 B CN 111368740B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 230000003139 buffering effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 151
- 239000002346 layers by function Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Abstract
The invention discloses a flexible identification sensor which comprises a first electrode layer, an identification sensing layer and a second electrode layer which are sequentially stacked, wherein at least one of the first electrode layer, the identification sensing layer and the second electrode layer forms a wave-shaped structure along a first direction, or at least one of the first electrode layer, the identification sensing layer and the second electrode layer forms a wave-shaped structure along the first direction and a second direction, and the first direction is perpendicular to the second direction. The flexible identification sensor has the functions of buffering external acting force and reducing reflectivity, and is better in flexibility and higher in identification sensitivity. The invention also provides a manufacturing method of the flexible identification sensor.
Description
Technical Field
The invention relates to a flexible device, in particular to a flexible identification sensor and a manufacturing method thereof.
Background
Along with the continuous development of technology, there are more and more demands on electronic products, wherein the demands on the appearance of the electronic products are also very high, and the electronic products are already trend to be light, thin and flexible.
With the maturity of OLED display technology, intelligent terminals adopting OLED flexible screens are more and more, and new requirements are also provided for an under-screen fingerprint identification sensor matched with the flexible screens. At present, the structure that still hard screen age adopted by fingerprint identification sensor under the screen, specifically, each functional layer in the fingerprint identification sensor under the screen is smooth straight plate structure, when external force acts on flexible screen, the effort makes it take place to fracture easily on the fingerprint identification sensor under the screen through flexible screen transmission to the fingerprint identification sensor under the screen, and especially the electrode of fingerprint identification sensor under the screen adopts the ITO material, and is more fragile, atress is easy to fracture, and the straight plate structure of each functional layer also causes light reflection easily and weakens the sensing signal moreover, reduces fingerprint identification's sensitivity.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides the flexible identification sensor which has the functions of buffering external acting force and reducing the reflectivity, and has better flexibility and higher identification sensitivity. The invention also provides a manufacturing method of the flexible identification sensor.
The technical problems to be solved by the invention are realized by the following technical scheme:
the utility model provides a flexible recognition sensor, includes first electrode layer, discernment sensing layer and the second electrode layer of laminating in proper order, at least one deck in first electrode layer, discernment sensing layer and the second electrode layer forms the wave structure along first direction, perhaps, at least one deck in first electrode layer, discernment sensing layer and the second electrode layer all forms the wave structure along first direction and second direction, first direction perpendicular to second direction.
Further, the gradient angle of the wavy structure of at least one layer of the first electrode layer, the identification sensing layer and the second electrode layer in the first direction is 30-60 degrees, or the gradient angle of the wavy structure of at least one layer of the first electrode layer, the identification sensing layer and the second electrode layer in the first direction and the second direction is 30-60 degrees.
Further, the surface of the first electrode layer forms a wavy surface along a first direction, or the surface of the first electrode layer forms a wavy surface along both the first direction and a second direction; the identification sensing layer is laminated on the surface of the first electrode layer in an equal thickness manner, and the second electrode layer is laminated on the surface of the identification sensing layer in an equal thickness manner, so that the identification sensing layer and the second electrode layer form a wavy structure along a first direction, or the identification sensing layer and the second electrode layer form a wavy structure along the first direction and a second direction at the same time.
Further, the angle of inclination of the undulating surface of the first electrode layer in the first direction is between 30 ° and 60 °, or the angle of inclination of the undulating surface of the first electrode layer in both the first direction and the second direction is between 30 ° and 60 °.
A manufacturing method of a flexible identification sensor comprises the following steps:
manufacturing a first electrode layer on the upper surface of a substrate;
manufacturing an identification sensing layer on the upper surface of the first electrode layer;
manufacturing a second electrode layer on the upper surface of the identification sensing layer;
at least one layer of the first electrode layer, the identification sensing layer and the second electrode layer forms a wave-shaped structure along a first direction during manufacturing, or at least one layer of the first electrode layer, the identification sensing layer and the second electrode layer forms a wave-shaped structure along the first direction and a second direction, and the first direction is perpendicular to the second direction.
Further, the gradient angle of the wavy structure of at least one layer of the first electrode layer, the identification sensing layer and the second electrode layer in the first direction is 30-60 degrees, or the gradient angle of the wavy structure of at least one layer of the first electrode layer, the identification sensing layer and the second electrode layer in the first direction and the second direction is 30-60 degrees.
Further, the surface of the first electrode layer forms a wavy surface along a first direction during manufacturing, or the surface of the first electrode layer forms a wavy surface along both the first direction and a second direction during manufacturing; the identification sensing layer is laminated on the surface of the first electrode layer in an equal thickness manner, and the second electrode layer is laminated on the surface of the identification sensing layer in an equal thickness manner, so that the identification sensing layer and the second electrode layer form a wavy structure along a first direction, or the identification sensing layer and the second electrode layer form a wavy structure along the first direction and a second direction at the same time.
Further, the angle of inclination of the undulating surface of the first electrode layer in the first direction is between 30 ° and 60 °, or the angle of inclination of the undulating surface of the first electrode layer in both the first direction and the second direction is between 30 ° and 60 °.
Further, when the first electrode layer is manufactured, a first conductive film is firstly manufactured on the surface of the substrate, then photomask etching is carried out on the first conductive film so as to manufacture a corresponding electrode pattern, and a wave-shaped surface is manufactured at the same time during etching.
Further, the mask plate corresponding to the first electrode layer is provided with a light transmission pattern and a shading pattern, wherein the light transmission pattern corresponds to the hollowed-out pattern of the first electrode layer, and the shading pattern corresponds to the electrode pattern of the first electrode layer; different areas of the shading pattern have different shading rates so as to respectively correspond to areas with different height differences between the highest point of the wave crest or the lowest point of the wave trough on the electrode pattern of the first electrode layer.
The invention has the following beneficial effects: the flexible identification sensor is characterized in that at least one functional layer among the first electrode layer, the identification sensing layer and the second electrode layer is manufactured into a wave-shaped structure to form a relatively concave-convex wave crest and wave trough structure, so that the functions of buffering external acting force and reducing the reflectivity are achieved, the flexibility performance is better, and the identification sensitivity is higher.
Drawings
FIG. 1 is a schematic cross-sectional view of a flexible sensor provided by the present invention;
FIG. 2 is a schematic view of a wave-shaped structure of a flexible sensor according to the present invention;
FIG. 3 is a schematic view of another wavy structure of the flexible sensor according to the present invention;
fig. 4 is a block diagram of steps of a method for manufacturing a flexible sensor according to the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples.
As shown in fig. 1, the flexible identification sensor comprises a first electrode layer 2, an identification sensing layer 3 and a second electrode layer 4 which are sequentially stacked, wherein at least one layer of the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 forms a wave-shaped structure along a first direction X as shown in fig. 2, or at least one layer of the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 forms a wave-shaped structure along the first direction X and a second direction Y as shown in fig. 3, and the first direction X is perpendicular to the second direction Y.
The flexible identification sensor is characterized in that at least one functional layer among the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 is manufactured into a wave-shaped structure to form a relatively concave-convex wave crest 5 wave trough 6 structure, so that the flexible identification sensor has the effects of buffering external acting force and reducing the reflectivity, and is better in flexibility and higher in identification sensitivity.
1. Principle of flexible impact resistance:
because the first electrode layer 2, the identification sensing layer 3 or the second electrode layer 4 is of a relatively concave-convex wave crest 5 and wave trough 6 structure, a slope 7 in transition between the wave crest 5 and the wave trough 6 is respectively provided with a slope angle a between the wave crest 5 and the wave trough 6, the slope angle a can be relatively opened and closed, similar to the folding angle of a folding fan, when a work W with the same energy acts on the flexible identification sensor, the first electrode layer 2, the identification sensing layer 3 or the second electrode layer 4 of the wavy structure can generate deformation displacement S in the direction of acting force F due to the relative opening and closing of the slope angle a, and according to W=F=S, the larger the generated deformation displacement S is, the smaller the acting force F is received by the unit area, namely, the breakage is less likely to occur.
2. Principle of increasing sensitivity:
the optical fingerprint recognition sensor performs recognition and matching on the fingerprint image according to an image recognition algorithm by imaging the light reflected by the fingerprint surface, and compared with a flat surface, the concave-convex surface has lower reflectivity, and the first electrode layer 2, the recognition sensing layer 3 or the second electrode layer 4 with the wavy structure can reduce the reflection quantity of the light on the fingerprint surface and improve the receiving quantity of the light on the fingerprint surface, so that the sensitivity of fingerprint recognition is improved.
It should be noted that the wavy structure means that the first electrode layer 2, the identification sensor layer 3, or the second electrode layer 4 has, on one surface, a peak 5 protruding relatively upward and a trough 6 recessed relatively downward in the first direction X, or has, on both the first direction X and the second direction Y, a peak 5 protruding relatively upward and a trough 6 recessed relatively downward in the second direction Y, and protrudes relatively upward and downward at a position corresponding to the peak 5 and a position corresponding to the trough 6, respectively, so that the cross section of the first electrode layer 2, the identification sensor layer 3, or the second electrode layer 4 in the first direction X is meandering, or the cross section in both the first direction X and the second direction Y is meandering.
According to the smoothness of the wave crests 5 and the wave troughs 6, the wave-shaped structure can be, but is not limited to, V-shaped waves, arc-shaped waves or trapezoid waves, etc., wherein the V-shaped waves refer to that the wave crests 5 and the wave troughs 6 of the wave-shaped structure are sharp-angle structures, so as to form V-shaped structures with slopes 7 at two sides of the wave-shaped structure, the arc-shaped waves refer to that the wave crests 5 and the wave troughs 6 of the wave-shaped structure are cambered structures, so as to form arc-shaped structures with slopes 7 at two sides of the wave-shaped structure, and the trapezoid waves refer to that the wave crests 5 and the wave troughs 6 of the wave-shaped structure are plane structures, so as to form trapezoid structures with slopes 7 at two sides of the wave-shaped structure.
The substrate 1 where the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 are located is taken as a reference plane, the plane or the tangent plane where the highest point of the wave crest 5 is located and the plane or the tangent plane where the lowest point of the wave trough 6 is located are all parallel to the reference plane, the gradient angle a (the included angle between the reference plane and the slope 7) of the wavy structure of at least one layer of the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 in the first direction X is 30-60 degrees, or the gradient angle a (the included angle between the reference plane and the slope 7) of the wavy structure of at least one layer of the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 in the first direction X and the second direction Y is 30-60 degrees.
The manufacturing method of the flexible identification sensor, as shown in fig. 4 and 1, comprises the following steps:
fabricating the first electrode layer 2 on the surface of the substrate 1;
fabricating the identification sensing layer 3 on the surface of the first electrode layer 2;
manufacturing a second electrode layer 4 on the surface of the identification sensing layer 3;
wherein, as shown in fig. 2, at least one of the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 forms a wave structure along a first direction X during manufacturing, or, as shown in fig. 3, at least one of the first electrode layer 2, the identification sensing layer 3 and the second electrode layer 4 forms a wave structure along the first direction X and a second direction Y, and the first direction X is perpendicular to the second direction Y.
In this embodiment, the surface of the first electrode layer 2 forms a wavy surface along the first direction X, or the surface of the first electrode layer 2 forms a wavy surface along both the first direction X and the second direction Y; the identification sensing layer 3 is laminated on the surface of the first electrode layer 2 in an equal thickness manner, the second electrode layer 4 is laminated on the surface of the identification sensing layer 3 in an equal thickness manner in sequence, and finally the identification sensing layer 3 and the second electrode layer 4 form a wavy structure along the first direction X, or the identification sensing layer 3 and the second electrode layer 4 form a wavy structure along the first direction X and the second direction Y at the same time.
Wherein the angle of inclination a of the undulating surface of the first electrode layer 2 in the first direction X (the angle between the reference plane and the slope 7) is between 30 ° and 60 °, or the angle of inclination a of the undulating surface of the first electrode layer 2 in both the first direction X and the second direction Y (the angle between the reference plane and the slope 7) is between 30 ° and 60 °.
When the first electrode layer 2 is manufactured, a first conductive film is firstly manufactured on the surface of the substrate 1, then the first conductive film is subjected to photomask etching to manufacture a corresponding electrode pattern, and a wave-shaped surface is manufactured at the same time during etching. The mask plate corresponding to the first electrode layer 2 is provided with a light transmission pattern and a shading pattern, the light transmission pattern corresponds to the hollowed-out pattern of the first electrode layer 2, and the shading pattern corresponds to the electrode pattern of the first electrode layer 2; the different regions of the light shielding pattern have different light shielding rates to respectively correspond to regions having different height differences from the highest point of the wave crest 5 or the lowest point of the wave trough 6 on the electrode pattern of the first electrode layer 2, so that the photoresist after development forms different thicknesses on the different regions of the electrode pattern of the first electrode layer 2, wherein the region of the light shielding pattern corresponding to the highest point of the wave crest 5 has the largest light shielding rate, such as 100%, and the region corresponding to the lowest point of the wave trough 6 has the smallest light shielding rate, such as 50%. .
When the wavy surface of the first electrode layer 2 is manufactured, the photoresist is firstly developed and thinned to remove the thinnest area of the photoresist, then the electrode pattern of the first electrode layer 2 is etched and thinned, then the photoresist is secondarily developed and thinned to remove the thinnest area of the photoresist, then the electrode pattern of the first electrode layer 2 is secondarily etched and thinned, and so on until the electrode pattern of the first electrode layer 2 forms the required wavy surface.
And the identification sensing layer 3 and the second electrode layer 4 are subjected to equal-thickness sputtering by adopting a sputtering process during film coating, and then are etched to manufacture electrode patterns.
In this embodiment, the first electrode layer 2 is a metal electrode layer, the second electrode layer 4 is an ITO electrode layer, and the identification sensing layer 3 is a light-sensitive semiconductor layer.
The above examples only show embodiments of the present invention, and the description thereof is more specific and detailed, but should not be construed as limiting the scope of the invention, but all technical solutions obtained by equivalent substitution or equivalent transformation shall fall within the scope of the invention.
Claims (3)
1. The manufacturing method of the flexible identification sensor is characterized by comprising a first electrode layer laminated on the upper surface of a substrate, an identification sensing layer laminated on the upper surface of the first electrode layer and a second electrode layer laminated on the upper surface of the identification sensing layer; at least one of the first electrode layer, the identification sensing layer and the second electrode layer forms a wave-shaped structure along a first direction, or at least one of the first electrode layer, the identification sensing layer and the second electrode layer forms a wave-shaped structure along a first direction and a second direction, and the first direction is perpendicular to the second direction; the first electrode layers have different thicknesses so that the upper surfaces of the first electrode layers form wavy surfaces in a first direction or so that the upper surfaces of the first electrode layers form wavy surfaces in both a first direction and a second direction; the identification sensing layer is laminated on the upper surface of the first electrode layer in a uniform thickness manner, and the second electrode layer is laminated on the upper surface of the identification sensing layer in a uniform thickness manner, so that the identification sensing layer and the second electrode layer form a wavy structure along a first direction, or the identification sensing layer and the second electrode layer form a wavy structure along the first direction and a second direction at the same time;
the manufacturing method comprises the following steps:
manufacturing a first electrode layer on the upper surface of a substrate;
manufacturing an identification sensing layer on the upper surface of the first electrode layer;
manufacturing a second electrode layer on the upper surface of the identification sensing layer;
when the first electrode layer is manufactured, a first conductive film is firstly manufactured on the surface of the substrate, then photomask etching is carried out on the first conductive film so as to manufacture a corresponding electrode pattern, and a wave-shaped surface is manufactured at the same time during etching; the mask plate corresponding to the first electrode layer is provided with a light transmission pattern and a shading pattern, the light transmission pattern corresponds to the hollowed-out pattern of the first electrode layer, and the shading pattern corresponds to the electrode pattern of the first electrode layer; different areas of the shading pattern have different shading rates so as to respectively correspond to areas with different height differences between the highest point of the wave crest or the lowest point of the wave trough on the electrode pattern of the first electrode layer, so that photoresist after development forms different thicknesses on different areas of the electrode pattern of the first electrode layer; when the wavy surface of the first electrode layer is manufactured, developing and thinning the photoresist to remove the thinnest area of the photoresist, etching and thinning the electrode pattern of the first electrode layer, secondarily developing and thinning the photoresist to remove the thinnest area of the photoresist, secondarily etching and thinning the electrode pattern of the first electrode layer, and the like until the electrode pattern of the first electrode layer forms the required wavy surface.
2. The method of manufacturing a flexible identification sensor according to claim 1, wherein a gradient angle of the wavy structure of at least one of the first electrode layer, the identification sensing layer and the second electrode layer in the first direction is between 30 ° and 60 °, or a gradient angle of the wavy structure of at least one of the first electrode layer, the identification sensing layer and the second electrode layer in the first direction and the second direction is between 30 ° and 60 °.
3. The method of manufacturing a flexible identification sensor according to claim 1, wherein the angle of inclination of the undulating surface of the first electrode layer in the first direction is between 30 ° and 60 °, or wherein the angle of inclination of the undulating surface of the first electrode layer in both the first direction and the second direction is between 30 ° and 60 °.
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| CN202010147870.7A CN111368740B (en) | 2020-03-05 | 2020-03-05 | Flexible identification sensor and manufacturing method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102217081A (en) * | 2008-09-05 | 2011-10-12 | 弗莱克赛尔有限公司 | Solar cell with flexible corrugated substrate and method for the production thereof |
| CN105489660A (en) * | 2014-10-02 | 2016-04-13 | 三星电子株式会社 | Stretchable optoelectronic device, method of manufacturing the same, and apparatus, light-emitting device, sensor system, and sensor circuit including the stretchable optoelectronic device |
| CN106611170A (en) * | 2017-01-03 | 2017-05-03 | 京东方科技集团股份有限公司 | Fingerprint recognition device and electronic equipment |
| CN106802200A (en) * | 2017-02-23 | 2017-06-06 | 北京航空航天大学 | A kind of flexible vector tactile and slip sense compound sensor |
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2020
- 2020-03-05 CN CN202010147870.7A patent/CN111368740B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102217081A (en) * | 2008-09-05 | 2011-10-12 | 弗莱克赛尔有限公司 | Solar cell with flexible corrugated substrate and method for the production thereof |
| CN105489660A (en) * | 2014-10-02 | 2016-04-13 | 三星电子株式会社 | Stretchable optoelectronic device, method of manufacturing the same, and apparatus, light-emitting device, sensor system, and sensor circuit including the stretchable optoelectronic device |
| CN106611170A (en) * | 2017-01-03 | 2017-05-03 | 京东方科技集团股份有限公司 | Fingerprint recognition device and electronic equipment |
| CN106802200A (en) * | 2017-02-23 | 2017-06-06 | 北京航空航天大学 | A kind of flexible vector tactile and slip sense compound sensor |
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