CN111364023A - Surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition - Google Patents
Surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition Download PDFInfo
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
Abstract
The invention belongs to the technical field of atomic layer deposition, and particularly relates to a surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition. According to the invention, silver powder is placed in centrifugal fluidization micro-nano particle atomic layer deposition equipment, and nano-scale compact oxide film coating with uniform thickness is carried out on the surface of the silver powder through atomic layer deposition reaction under the conditions of proper reaction temperature, pressure and rotating speed. According to the invention, the atomic layer deposition technology is utilized to coat the nano-scale compact oxide film with controllable thickness on the surface of the photovoltaic front conductive silver paste silver powder, the surface of the silver powder is modified to improve the surface roughness, the spherical silver powder with a smooth surface is prepared, and the dispersion stability of the silver powder in the conductive silver paste is improved, so that the pores on the surface of silver powder particles are reduced, the wettability of the silver powder in an organic solvent is improved, the printing performance of the conductive silver paste prepared by the silver powder is improved, and the higher photoelectric conversion efficiency is obtained.
Description
Technical Field
The invention belongs to the technical field of atomic layer deposition, and particularly relates to a surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition.
Background
The silver powder is largely used in the photovoltaic silver paste due to good conductivity, and the photovoltaic silver paste consists of a conductive phase, a binding phase and an organic carrier 3, wherein the conductive phase is a functional phase of the photovoltaic silver paste, namely the silver powder. The dispersion degree of silver powder in the conductive silver paste in the organic carrier has great influence on the printing quality of the conductive silver paste and the adaptability of the production process.
Patent CN104400000A describes a method for preparing spherical silver powder, which comprises adjusting the pH of silver nitrate solution with ammonium sulfate solution, adding prepared ascorbic acid solution into silver nitrate solution, stirring, washing, filtering, drying, and powdering. The silver powder prepared by the method has the advantages of good sphericity, concentrated particle size distribution, high tap density, poor dispersibility and poor intersolubility with an organic solvent, and the prepared silver paste has the problems of layering and uneven printing.
A large number of researches show that the currently used spherical silver powder is hard aggregate of dendritic particles extending to all directions and has a rough surface. The surfaces of gas and organic solvent in the particle pores are still present, and the wettability of the surfaces to the organic solvent is poor, so that the whole silver paste system is in an uneven state, high-content silver paste and particle aggregates are easily embedded with each other, the flow resistance is increased, and the printing performance is poor.
In view of the above drawbacks and requirements of improvement in the prior art, it is necessary to invent a method for preparing spherical silver powder with smooth surface.
Disclosure of Invention
The invention aims to solve the technical problem that the defects of the prior art are overcome, and the surface modification method of the photovoltaic front conductive silver paste silver powder based on atomic layer deposition is provided.
In order to solve the technical problems, the invention adopts the following technical scheme: a surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition comprises the following steps:
(1) drying: putting the silver powder into a baking oven with the temperature of 50-100 ℃ for continuous baking for 0.5-5 h;
(2) precursor pulse regulation: the pulse of the precursor A and the precursor B is adjusted to be 20-50Pa, and the flow of the carrier gas is 100-200 sccm;
(3) and (3) debugging the temperature and the pressure of the cavity: placing the silver powder dried in the step (1) in micro-nano particle atomic layer deposition equipment, heating a reaction cavity, simultaneously opening a vacuum pump to vacuumize the cavity, setting the temperature of the cavity at 120-;
(4) atomic layer deposition reaction: and (4) after the temperature, the pressure and the rotating speed of the holder reach the set values in the step (3), coating the deposited oxide, introducing carrier gas for cleaning after coating is finished, and removing the precursor which does not participate in the reaction and the reaction by-product on the surface of the silver powder to obtain the modified silver powder.
Further, the atomic layer deposition reaction process in the step (4) is specifically as follows:
(4.1) introducing the precursor A into the cavity, and completing a first half reaction of saturated chemical adsorption and atomic layer deposition on the surface of the silver powder;
(4.2) introducing carrier gas to discharge the residual precursor A out of the cavity;
(4.3) the precursor B enters the reaction cavity to continue to perform a second half reaction of saturated adsorption and atomic layer deposition of the precursor B on the surface of the saturated adsorption layer of the precursor A;
(4.4) introducing carrier gas to discharge the redundant precursor and the by-product generated by the reaction out of the cavity;
(4.5) repeating the steps (4.1) - (4.4) until the dense oxide layer coating on the silver powder surface is completed.
Further, the silver powder in the step (1) is spherical silver powder, and the surface roughness of the silver powder is 30-50 μm.
Further, in the precursor combination for depositing the oxide in the step (4), the precursor a is one or more of deionized water, oxygen or ozone, and the precursor B is one or more of titanium tetrachloride, trimethylaluminum or tetradimethylamino zirconium.
Further, in the steps (4.1) and (4.3), the two precursors are respectively placed in corresponding source bottles, and the gas-phase precursor is carried into the reaction cavity through carrier gas.
Further, in the steps (4.1) - (4.4), the reaction temperature is 120-150 ℃, the pressure in the cavity before the carrier gas is introduced is not higher than 10Pa, when the two precursors react, the pulse duration is 30-60s, and the flow rate of the inert gas is 100-200 sccm; and when the adsorption of one precursor is finished, inert gas is needed to clean the surface of the silver powder, and the cleaning time is 60-120 s.
Further, the carrier gas is inert gas, and the inert gas is high-purity nitrogen or argon.
Further, the repetition times of the steps (4.1) to (4.4) are 1 to 1000 times, the thickness of the oxide layer-coated film is 0.1 to 100nm, and the mass of the coated silver powder is 1 to 200 g.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, the atomic layer deposition technology is utilized to cover a layer of uniform and compact film on the surface of the silver powder, so that the pores on the surface of the silver powder particles are reduced, the wettability of the silver powder in an organic solvent is improved, the printing performance of the conductive silver paste prepared by the silver powder is improved, the photoelectric conversion efficiency is higher, the generated nano film has higher coating uniformity, and the uniform coating of the silver powder with smaller particles can be realized.
2. The invention can generate one or more layers of compact, uniform, firm and thickness-controllable nanometer films by utilizing the atomic layer deposition technology, and improves the surface roughness of the silver powder within the nanometer range on the premise of not influencing the original performance of the silver powder.
Drawings
Fig. 1 is a flow chart of a surface modification method of a photovoltaic front conductive silver paste powder based on atomic layer deposition.
Detailed Description
The technical solution of the present invention will be further described below by way of specific examples.
Example 1
A surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition is characterized in that the surface of 10g of silver powder with the particle size of 5 mu m is coated with TiO by adopting the atomic layer deposition technology2The film (thickness 9 nm) was surface modified by the following main equation: TiCl +2H2O→TiO2+4HCl；
（A）TiCl4+TiOH*→TiOTiCl3*+HCl；
（B）2H2O+ TiCl3*→TiOH*+3HCl；
The method specifically comprises the following steps:
(1) after continuously baking silver powder in an oven with the temperature set to 60 ℃ for 2h, weighing 10g of silver powder, placing the silver powder in a micro-nano particle holder of atomic layer deposition equipment, placing the holder in a cavity, closing a cavity door and vacuumizing to 10 Pa;
(2) adjusting the pulse of a precursor titanium tetrachloride and a precursor deionized water to 20Pa, and setting the flow of a carrier gas to be 100 sccm;
(3) setting the rotating speed of the gripper to be 100rpm, and opening a gripper driving motor;
(4) heating the cavity, and simultaneously introducing carrier gas to clean the surface of the silver powder for 30min and disperse the silver powder, wherein the flow of the carrier gas is 200 sccm;
(5) after the temperature of the cavity reaches 150 ℃, the pressure of the cavity is stabilized at 70Pa and the rotating speed of the clamper is stabilized at 100rpm, the atomic layer deposition reaction is carried out, and the method specifically comprises the following steps:
(5.1) after the pressure in the chamber was evacuated to 10Pa at the same evacuation rate, a pulse of titanium tetrachloride was introduced for 40s with a pulse value of 20Pa to complete the atomic layer deposition first half-reaction (TiCl4+TiOH*→TiOTiCl3*+HCl）；
(5.2) introducing a carrier gas into the reaction cavity at the air extraction rate of 100Pa/s and the carrier gas flow of 100sccm, removing unadsorbed residual titanium tetrachloride, and cleaning for 40 s;
(5.3) deionized water pulse with pulse value of 30Pa is introduced for 40s to complete the second half reaction (2H) of atomic layer deposition2O+TiCl3*→TiOH*+3HCl）；
(5.4) introducing carrier gas into the reaction cavity at the air extraction rate of 100Pa/s and the carrier gas flow of 100sccm, removing unadsorbed precursor deionized water, and cleaning for 80 s;
(6) repeating the atomic layer deposition reaction for multiple times, specifically, the step (5) is sequentially and alternately circulated for 100 times, and a layer of compact, uniform and ultrathin TiO is coated on the surface of the silver powder after the atomic layer deposition reaction2The film is 9nm in thickness, and the surface modification of the silver powder is realized.
Example 2
A surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition is characterized in that an atomic layer deposition technology is adopted to coat TiO 18nm thick on the surface of 100g of silver powder with the particle size of 10 microns2A film, which is surface modified, the main equation of which is: TiCl +2H2O→TiO2+4HCl；
（A）TiCl4+TiOH*→TiOTiCl3*+HCl；
（B）2H2O+ TiCl3*→TiOH*+3HCl；
The method specifically comprises the following steps:
(1) after continuously drying silver powder in an oven with the temperature set to 60 ℃ for 2h, weighing 100g of silver powder, placing the silver powder in a micro-nano particle holder of atomic layer deposition equipment, placing the holder in a cavity, closing a cavity door and vacuumizing to 10 Pa;
(2) adjusting the pulse of a precursor titanium tetrachloride and a precursor deionized water to 30Pa, and setting the flow of a carrier gas to be 100 sccm;
(3) setting the rotating speed of the gripper to 200rpm, and opening a gripper driving motor;
(4) heating the cavity, simultaneously introducing carrier gas to clean the surface of the silver powder for 30min and disperse the silver powder, and selecting the carrier gas flow to be 200 sccm;
(5) after the temperature of the cavity reaches 150 ℃, the pressure of the cavity is stabilized at 70Pa, and the rotating speed of the clamper is stabilized at 200rpm, the atomic layer deposition reaction is carried out, which specifically comprises the following steps:
(5.1) after the pressure in the cavity is pumped to 10Pa at the same vacuum pumping speed, titanium tetrachloride pulse with the pulse value of 30Pa is introduced for 60s, and the first half reaction of atomic layer deposition (TiCl) is completed4+TiOH*→TiOTiCl3*+HCl）；
(5.2) introducing a carrier gas into the reaction cavity at the air extraction rate of 100Pa/s and the carrier gas flow of 100sccm, and removing residual titanium tetrachloride which is not adsorbed on the surface for 60 s;
(5.3) deionized water pulse with the pulse value of 30Pa is introduced for 60s to complete the second half reaction (2H) of atomic layer deposition2O+TiCl3*→TiOH*+3HCl）；
(5.4) introducing carrier gas into the reaction cavity at the air extraction rate of 100Pa/s and the carrier gas flow of 100sccm, removing precursor deionized water which is not adsorbed on the surface, and cleaning for 120 s;
(6) repeating the atomic layer deposition reaction for multiple times, specifically, the step (5) is sequentially and alternately circulated for 200 times, and a layer of compact, uniform and ultrathin TiO is coated on the surface of the silver powder after the atomic layer deposition reaction2The film is 18nm in thickness, and the surface modification of the silver powder is realized.
Example 3
A surface modification method of photovoltaic front conductive silver paste silver powder based on atomic layer deposition is characterized in that an atomic layer deposition technology is adopted to coat 22 nm-thick Al on the surface of 10g of silver powder with the particle size of 5 microns2O3A film, which is surface modified, the main equation of which is:
2Al(CH3)3+3H2O →Al2O3+6CH4；
（A）AlOH*+Al(CH3)3→ AlOAl(CH3)2*+CH4；
（B）AlCH3*+H2O → AlOH*+CH4；
the method specifically comprises the following steps:
(1) after continuously drying silver powder in an oven with the temperature set to 60 ℃ for 2h, weighing 10g of silver powder, placing the silver powder in a micro-nano particle holder of atomic layer deposition equipment, placing the holder in a cavity, closing a cavity door and vacuumizing to 10 Pa;
(2) adjusting the pulse of a precursor trimethylaluminum and precursor deionized water to 20Pa, and setting the flow of carrier gas to 100 sccm;
(3) setting the rotating speed of the gripper to be 100rpm, and opening a gripper driving motor;
(4) heating the cavity, simultaneously introducing carrier gas to clean the surface of the silver powder for 30min and disperse the silver powder, and selecting the carrier gas flow to be 200 sccm;
(5) after the temperature of the cavity reaches 150 ℃, the pressure of the cavity is stabilized at 70Pa, and the rotating speed of the clamper is stabilized at 100rpm, the atomic layer deposition reaction is carried out, which specifically comprises the following steps:
(5.1) pumping the pressure in the cavity to 10Pa at the same vacuum pumping rate, introducing trimethyl aluminum pulse with the pulse value of 20Pa, reacting for 50s, and finishing the first half reaction (AlOH + Al (CH) of atomic layer deposition)3)3→ AlOAl(CH3)2*+CH4）；
(5.2) introducing a carrier gas into the reaction cavity at the air extraction rate of 100Pa/s and the carrier gas flow rate of 100sccm, removing unadsorbed residual trimethylaluminum, and cleaning for 50 s;
(5.3) introducing deionized water pulse with the pulse value of 30Pa for 50s to complete the second half reaction (AlCH) of atomic layer deposition3*+H2O → AlOH*+CH4）；
(5.4) introducing carrier gas into the reaction cavity at the air extraction rate of 100Pa/s and the carrier gas flow of 100sccm, removing unadsorbed precursor deionized water, and cleaning for 100 s;
(6) repeating the atomic layer deposition reaction for multiple times, specifically, the step (5) is sequentially and alternately circulated for 200 times,after the atomic layer deposition reaction, the surface of the silver powder is coated with a layer of compact, uniform and ultrathin Al2O3The film is 22nm in thickness, and the surface modification of the silver powder is realized.
The method is based on the principle of atomic layer deposition, linear coating (0.8-1.1 Å/Cycle) of the film thickness along with the coating Cycle number is realized, namely dense and uniform oxide layer coating of the silver powder surface is realized, the key point of the method is that a precursor and a deposition reaction byproduct are selected to generate one or more layers of dense, uniform and firmly combined nano-scale films on the silver powder surface.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. The surface modification method of the photovoltaic front conductive silver paste silver powder based on atomic layer deposition is characterized by comprising the following steps:
(1) drying: putting the silver powder into a baking oven with the temperature of 50-100 ℃ for continuous baking for 0.5-5 h;
(2) precursor pulse regulation: the pulse of the precursor A and the precursor B is adjusted to be 20-50Pa, and the flow of the carrier gas is 100-200 sccm;
(3) and (3) debugging the temperature and the pressure of the cavity: placing the silver powder dried in the step (1) in micro-nano particle atomic layer deposition equipment, heating a reaction cavity, simultaneously opening a vacuum pump to vacuumize the cavity, setting the temperature of the cavity at 120-;
(4) atomic layer deposition reaction: and (4) after the temperature, the pressure and the rotating speed of the holder reach the set values in the step (3), coating the deposited oxide, introducing carrier gas for cleaning after coating is finished, and removing the precursor which does not participate in the reaction and the reaction by-product on the surface of the silver powder to obtain the modified silver powder.
2. The method for modifying the surface of the atomic layer deposition-based photovoltaic front conductive silver paste according to claim 1, wherein the atomic layer deposition reaction process in the step (4) is as follows:
(4.1) introducing the precursor A into the cavity, and completing a first half reaction of saturated chemical adsorption and atomic layer deposition on the surface of the silver powder;
(4.2) introducing carrier gas to discharge the residual precursor A out of the cavity;
(4.3) the precursor B enters the reaction cavity to continue to perform a second half reaction of saturated adsorption and atomic layer deposition of the precursor B on the surface of the saturated adsorption layer of the precursor A;
(4.4) introducing carrier gas to discharge the redundant precursor and the by-product generated by the reaction out of the cavity;
(4.5) repeating the steps (4.1) - (4.4) until the dense oxide layer coating on the silver powder surface is completed.
3. The method for surface modification of the atomic layer deposition-based photovoltaic front side conductive silver paste according to claim 1, wherein the silver powder in the step (1) is spherical silver powder, and the surface roughness of the silver powder is 30-50 μm.
4. The method for surface modification of the atomic layer deposition-based photovoltaic front side conductive silver paste according to claim 1, wherein in the precursor combination for depositing the oxide in the step (4), the precursor A is one or more of deionized water, oxygen or ozone, and the precursor B is one or more of titanium tetrachloride, trimethylaluminum or tetradimethylaminobenzonium.
5. The atomic layer deposition-based surface modification method for the photovoltaic front conductive silver paste powder according to claim 2, wherein the two precursors in the steps (4.1) and (4.3) are respectively placed in corresponding source bottles, and the gas-phase precursor is carried into the reaction chamber by a carrier gas.
6. The method for modifying the surface of the atomic layer deposition-based photovoltaic front conductive silver paste powder according to claim 2, wherein the reaction temperature in the steps (4.1) - (4.4) is 120-; and when the adsorption of one precursor is finished, inert gas is needed to clean the surface of the silver powder, and the cleaning time is 60-120 s.
7. The method for surface modification of the atomic layer deposition-based photovoltaic front side conductive silver paste powder according to claim 1 or 2, wherein the carrier gas is an inert gas, and the inert gas is high-purity nitrogen or argon.
8. The method for surface modification of the atomic layer deposition-based photovoltaic front side conductive silver paste according to claim 2, wherein the repeating times of the steps (4.1) - (4.4) are 1-1000, the thickness of the oxide layer coated film is 0.1-100nm, and the mass of the coated silver powder is 1-200 g.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853315A (en) * | 2021-01-11 | 2021-05-28 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | Surface modification method of solar front silver paste silver powder |
| CN115815587A (en) * | 2022-12-05 | 2023-03-21 | 深圳市众诚达应用材料科技有限公司 | Modified silver powder for silver paste of laminated chip inductor inner electrode and preparation method thereof |
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| CN106498365A (en) * | 2016-11-30 | 2017-03-15 | 华中科技大学 | A kind of method that zirconium oxide cladding aluminium powder realizes aluminium powder passivation |
| CN109355641A (en) * | 2018-11-06 | 2019-02-19 | 华中科技大学无锡研究院 | A kind of method that inorganic pigment surface is modified |
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- 2020-03-27 CN CN202010231952.XA patent/CN111364023A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106498365A (en) * | 2016-11-30 | 2017-03-15 | 华中科技大学 | A kind of method that zirconium oxide cladding aluminium powder realizes aluminium powder passivation |
| CN109355641A (en) * | 2018-11-06 | 2019-02-19 | 华中科技大学无锡研究院 | A kind of method that inorganic pigment surface is modified |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853315A (en) * | 2021-01-11 | 2021-05-28 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | Surface modification method of solar front silver paste silver powder |
| CN115815587A (en) * | 2022-12-05 | 2023-03-21 | 深圳市众诚达应用材料科技有限公司 | Modified silver powder for silver paste of laminated chip inductor inner electrode and preparation method thereof |
| CN115815587B (en) * | 2022-12-05 | 2023-11-28 | 深圳众诚达应用材料股份有限公司 | Modified silver powder for laminated inductor inner electrode silver paste and preparation method thereof |
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