CN111355308B - Wireless energy supply flexible lighting system and preparation method of wireless energy receiving end device thereof - Google Patents
Wireless energy supply flexible lighting system and preparation method of wireless energy receiving end device thereof Download PDFInfo
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- CN111355308B CN111355308B CN201811585708.2A CN201811585708A CN111355308B CN 111355308 B CN111355308 B CN 111355308B CN 201811585708 A CN201811585708 A CN 201811585708A CN 111355308 B CN111355308 B CN 111355308B
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- 239000003990 capacitor Substances 0.000 claims abstract description 79
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
- H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
Abstract
The present disclosure provides a wireless energy supply flexible lighting system and a method for preparing a wireless energy receiving end device thereof, wherein the wireless energy supply flexible lighting system comprises: wireless energy transmitting end device for converting electric energy into electromagnetic wave energy capable of propagating in free space; the wireless energy receiving end device is used for receiving electromagnetic wave energy emitted by the wireless energy emitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the energy receiving device includes: the LED light-emitting diode comprises a substrate, an isolation layer, a passivation layer, a wireless energy receiving coil, an LED light-emitting chip, a capacitor and a Schottky diode which are all flexible material layers. The resonant wireless energy transmission technology is utilized, the problem that the receiving end needs to be connected by a wire for supplying power is avoided, and the wireless energy receiving end device is provided with the flexible material layer with low Young modulus, so that the resonant wireless energy transmission device has good application prospect in the fields requiring light source stimulation such as 'electronic skin', 'optogenetic probe', 'human artificial limb' and the like.
Description
Technical Field
The disclosure relates to the field of flexible light emitting equipment, in particular to a wireless energy supply flexible light emitting system and a preparation method of a wireless energy receiving end device.
Background
In optogenetics, optical fiber connection is firstly adopted, but when living body population experiments or outdoor, underwater and other experimental scenes are studied, the range of animal movement is limited by the optical fiber connection, and the population experiments also have the risks of winding, knotting and twisting fracture of optical fibers. Next, attempts have been made to power the light source by wireless energy, but since the experimental device needs to be placed in the brain of the animal, if the experimental device is exposed outside, the animal is easy to bump off during the course of the animal's activity or by itself. Based on this problem, a solution is proposed in which the device can be miniaturized and implanted under the skin of the animal, but since the brain of the animal is relatively soft, if the implanted device is made of a hard material such as a PCB board, the immune response and inflammation of the animal will be caused, and the application of a flexible material based on the above problems is proposed.
In the research fields of electronic skin, artificial prostheses and the like, the device is required to have the characteristics of portability, skin adhesion, miniaturization, electric leakage hazard caused by no electric wires and the like, and a wireless energy-supply, flexible, safe, convenient and reliable system well meets the characteristics.
And currently, semiconductor light emitting chips (including most semiconductor chips) require metal electrode contacts to be fabricated on the chip. In the manufacturing process of the light-emitting device, in order to facilitate the processes of gold wire bonding and the like in the subsequent packaging process, the area of the metal electrode on the chip at least reaches the size of a circle with the diameter of 80 μm, but one light-emitting device comprises a positive and negative electric access point, so that at least 2 metal electrodes with the same size are required to be prepared. However, this makes the technical research of the micro light emitting chip encounter a great technical problem, and as the research and development size of the chip is continuously reduced, the situation that the surface of the chip has only metal electrodes and the light emitting area is small or even not exists may finally occur; however, in the packaging process of the LED, the LED needs to be electrically injected by wire bonding, so that the metal electrode is indispensable, and the existence of the metal electrode prevents further miniaturization research of the LED chip.
Disclosure of Invention
First, the technical problem to be solved
The disclosure provides a wireless energy supply flexible lighting system and a preparation method of a wireless energy receiving end device thereof, so as to at least partially solve the technical problems set forth above.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a wireless-powered flexible lighting system comprising: wireless energy transmitting end device for converting electric energy into electromagnetic wave energy capable of propagating in free space; the wireless energy receiving end device is used for receiving electromagnetic wave energy emitted by the wireless energy emitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the wireless energy receiving end device comprises: the substrate and the passivation layer are flexible material layers; a wireless energy receiving coil, comprising: a first layer of coil metal grown on the substrate; and a second layer of coil metal grown on the first layer of coil metal; a first isolation layer grown on the substrate; the first isolation layer is a flexible material layer; the first isolation layer is adjacent to the first layer of coil metal; a second isolation layer grown on the first layer of coil metal, wherein the second layer of coil metal is isolated by the second isolation layer; the second isolation layer is a flexible material layer; and the LED light-emitting chip is transferred to the first isolation layer and is connected with the second layer of coil metal.
In some embodiments of the present disclosure, the energy receiving end device further includes: a capacitor lower electrode metal layer which is grown on the substrate, and the first isolation layer is adjacent to the capacitor lower electrode metal layer at the same time; a capacitor dielectric layer which is grown on the capacitor lower electrode metal layer; the second capacitor upper electrode metal layer is grown on the capacitor dielectric layer and is connected with the LED light-emitting chip; the third isolation layer is grown on the capacitor dielectric layer and is adjacent to the second capacitor upper electrode metal layer; the third isolation layer is a flexible material layer.
In some embodiments of the present disclosure, further comprising: a Schottky diode u-GaN grows on the first isolation layer; the first capacitor upper electrode metal layer is grown on the capacitor lower electrode metal layer; one end of the first capacitor upper electrode metal layer is connected with the Schottky diode u-GaN; the other end of the first capacitor upper electrode metal layer is adjacent to the third isolation layer; and the Schottky contact metal of the Schottky diode is grown on the same first isolation layer as the Schottky diode u-GaN and is connected with the Schottky diode u-GaN.
In some embodiments of the present disclosure, the LED light chip is largeSmall of 30×30 μm 2 -200×200μm 2 。
In some embodiments of the present disclosure, the flexible material layer corresponding to the substrate, isolation layer and passivation layer has a size of 2×2mm 2 -4×4mm 2 The thickness is 30 μm-200 μm.
According to another aspect of the present disclosure, there is provided a method for manufacturing a wireless energy receiving terminal device, including: step S100: respectively manufacturing a first layer of coil metal and a patterned first isolation layer on a substrate; step S200: manufacturing a patterned second isolation layer on the first layer of coil metal; step S300: transferring the LED light-emitting chip onto the first isolation layer by a transfer printing method; step S400: manufacturing a second layer of coil metal on the first layer of coil metal; the second layer of coil metal is connected with the LED light-emitting chip; step S500: a passivation layer is spin-coated on the structure of the step S400 as a protection.
In some embodiments of the present disclosure, step S100 further includes: manufacturing a capacitor lower electrode metal layer on the substrate; then, a capacitance medium layer is manufactured on the prepared capacitance lower electrode metal layer; step S200 further includes: manufacturing a patterned third isolation layer on the capacitance medium layer; step S400 further includes: and manufacturing a second capacitor upper electrode metal layer on the capacitor dielectric layer.
In some embodiments of the present disclosure, step S300 further includes: transferring the schottky diode u-GaN to the first isolation layer by a transfer method; step S400 further includes: manufacturing a Schottky contact metal of the Schottky diode on the first isolation layer; and manufacturing a first capacitor upper electrode metal layer on the capacitor lower electrode metal layer.
(III) beneficial effects
According to the technical scheme, the wireless energy supply flexible lighting system and the preparation method of the wireless energy receiving end device have at least one or a part of the following beneficial effects:
(1) The substrate, the isolation layer and the passivation layer in the method adopt flexible material layers, so that the device can be in contact with soft biological tissues and organs, has good conformality and compatibility, can reduce the damage to brain tissues when the device is implanted and moved, and can also reduce tissue immune response and generated inflammation.
(2) The wireless energy receiving coil provided by the disclosure reduces the metal coverage area by utilizing a wireless energy supply mode and increases the luminous area of the chip.
(3) The chip size is effectively reduced in the present disclosure.
(4) The method has the advantages of simple process flow, high yield, low cost of single device, economy, practicability and high reliability.
Drawings
Fig. 1 is an equivalent circuit diagram of a wireless powered flexible lighting system according to an embodiment of the present disclosure.
Fig. 2 is a side cross-sectional view of a wireless energy receiving end device in the wireless-powered flexible lighting system of fig. 1.
Fig. 3 is a schematic diagram of a method for manufacturing a wireless energy receiving device according to an embodiment of the disclosure.
[ in the drawings, the main reference numerals of the embodiments of the present disclosure ]
10-a wireless energy receiving end device;
20-a wireless energy transmitting end device;
100-a substrate;
101-a first layer of coil metal;
102-a capacitance lower electrode metal layer;
1031-a first isolation layer;
1032-a second isolation layer;
1033-a third barrier layer;
104-a capacitance dielectric layer;
201-schottky diode u-GaN;
2021-a first capacitor upper electrode metal layer;
2022-a second capacitor upper electrode metal layer;
203-a second layer of coil metal;
204-schottky diode schottky contact metal;
205-LED light emitting chips;
301-passivation layer.
Detailed Description
The present disclosure provides a wireless energy supply flexible lighting system and a method for preparing a wireless energy receiving end device thereof, wherein the wireless energy supply flexible lighting system comprises: wireless energy transmitting end device for converting electric energy into electromagnetic wave energy capable of propagating in free space; the wireless energy receiving end device is used for receiving electromagnetic wave energy emitted by the wireless energy emitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the wireless energy receiving end device comprises: the LED light-emitting diode comprises a substrate, an isolation layer, a passivation layer, a wireless energy receiving coil, an LED light-emitting chip, a capacitor and a Schottky diode which are all flexible material layers. The resonant wireless energy transmission technology is utilized, the problem that the receiving end needs to be connected by a wire for supplying power is avoided, and the wireless energy receiving end device is provided with the flexible material layer with low Young modulus, so that the resonant wireless energy transmission device has good application prospect in the fields requiring light source stimulation such as 'electronic skin', 'optogenetic probe', 'human artificial limb' and the like.
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a wireless-powered flexible lighting system is provided. Fig. 1 is an equivalent circuit diagram of a wireless powered flexible lighting system according to an embodiment of the present disclosure. As shown in fig. 1, the present disclosure is a wireless-powered flexible lighting system comprising: a wireless energy transmitting end device 20 and a wireless energy receiving end device 10. Wherein the wireless energy transmitting end device 20 is used for converting electric energy into electromagnetic wave energy which can propagate in free space; the wireless energy receiving end device 10 comprises a wireless energy receiving coil, a luminous light source and a multiplication rectifying circuit consisting of a capacitor and a diode, and is used for receiving electromagnetic wave energy emitted by the wireless energy emitting end device 20, converting the electromagnetic wave energy received by the wireless energy receiving coil into electric energy and then driving the luminous light source to emit light. In fig. 1, a quadruple rectification circuit is provided, which rectifies the alternating current received by the wireless energy receiving coil into direct current, multiplies the direct current by four, and then supplies power to the luminous light source. The method reduces the metal coverage area by using a wireless energy supply mode, and increases the light-emitting area of the chip; in addition, the wireless energy-supply optical stimulation device is more convenient for the study of behaviours, unlike the situation that the optical fiber connection can cause the limitation of the behaviors and the activity range of experimental animals. It will be appreciated by those skilled in the art that the four-fold rectifying circuit is presented as an example only, and may be adapted in practice to the respective circumstances, and may be a 2-fold, 3-fold or other multiplying rectifying circuit.
Fig. 2 is a side cross-sectional view of a wireless energy receiving end device in the wireless-powered flexible lighting system of fig. 1. As shown in fig. 2, the wireless energy receiving apparatus 10 includes: the substrate 100 and passivation layer 301, the wireless energy receiving coil and the LED light chip 205, all being flexible material layers. Wherein the wireless energy receiving coil comprises: a first layer of coil metal 101 and a second layer of coil metal 203. A first layer of coil metal 101 is grown on the substrate 100. A second layer of coil metal 203 is grown on the first layer of coil metal 101. The first isolation layer 1031 is grown on the substrate 100; the first isolation layer 1031 is adjacent to the first layer coil metal 101; a second isolation layer 1032 is grown on the first layer coil metal 101, and the second layer coil metal 203 is isolated by the second isolation layer 1032. The substrate 100, the first isolation layer 1031, the second isolation layer 1032 and the passivation layer 301 are all flexible material layers, and any flexible material such as PET, PI, PDMS, SU-8 photoresist may be used as the flexible material. Specifically, the number of wireless energy receiving coils is generally one, but in some embodiments, a plurality of wireless energy receiving coils may be connected in parallel, generally about 3 wireless energy receiving coils. The LED light emitting chip 205 is transferred onto the first isolation layer 1031 and connected to the second layer coil metal 203. It should be noted that the number of the first isolation layers 1031 grown on the substrate 100 needs to be adjusted according to the devices prepared on the substrate, and the purpose of the first isolation layers is to isolate adjacent devices grown on the substrate 100. The substrate 100, the isolation layer 103 and the passivation layer 301 are all made of flexible material layers, so that the device can be in contact with soft biological tissues and organs, has good shape retention and compatibility, can reduce damage to brain tissues during device implantation and movement, can reduce tissue immune response and generated inflammation, and has good application prospects in the fields requiring light source stimulation, such as 'electronic skin', 'optogenetic probe', 'human body artificial limb', and the like.
Further, the method further comprises the following steps: a capacitor bottom electrode metal layer 102, a capacitor dielectric layer 104, a first capacitor top electrode metal layer 2021, and a second capacitor top electrode metal layer 2022. Wherein the capacitance lower electrode metal layer 102 is grown on the substrate 100, and the first isolation layer 1031 is adjacent to the capacitance lower electrode metal layer 102 at the same time. A first capacitor upper electrode metal layer 2021 and a capacitor dielectric layer 104 are grown on the capacitor lower electrode metal layer 102. The second capacitor upper electrode metal layer 2022 is grown on the capacitor dielectric layer 104 and is connected to the LED light emitting chip 205. The third isolation layer 1033 is grown on the capacitor dielectric layer 104, and the third isolation layer 1033 is adjacent to the first capacitor upper electrode metal layer 1021 and the second capacitor upper electrode metal layer 1022. The third separator 1033 is a flexible material layer. Specifically, the size of the capacitor region is generally 30×30 μm 2 -200×200μm 2 . The number of capacitor areas is typically 1-5. It will be appreciated by those skilled in the art that the foregoing is merely preferred data and is not limited in scope.
Further, the method further comprises the following steps: the first capacitor upper electrode metal layer is formed on the first capacitor upper electrode metal layer, and the schottky diode u-GaN201 and the schottky diode schottky contact metal 204 are formed on the second capacitor upper electrode metal layer. Wherein the schottky diode u-GaN201 is transferred onto the first isolation layer 1031; the first capacitor upper electrode metal layer is grown on the capacitor lower electrode metal layer; one end of the first capacitor upper electrode metal layer is connected with the Schottky diode u-GaN 201; the other end of the first capacitor upper electrode metal layer is adjacent to the third isolation layer; schottky diode schottky diodeThe schottky contact metal 204 and the schottky diode u-GaN201 are grown on the same first spacer 1031, and the schottky diode schottky contact metal 204 is connected to the schottky diode u-GaN 201. Specifically, the size of the schottky diode region is generally 100×100 μm 2 -200×200μm 2 . The number of schottky diode regions is typically 1 to 5. It will be appreciated by those skilled in the art that the foregoing is merely preferred data and is not limited in scope.
Further, the LED light chip 205 has a size of 30×30 μm 2 -200×200μm 2 . Miniaturized LED light-emitting chip 205, the device has the advantages of strong light and small heat, and simultaneously has the advantages of mu m 2 Is advantageous in achieving single cell stimulation. For example: 50X 50 μm 2 The LED light-emitting chip 205 of the LED light-emitting device can reach 150mW/mm under the current of 1mA 2 About, the stimulation threshold is far higher than that of the optogenetic opsin ChR2 by 1mW/mm 2 。
Specifically, the substrate 100, the isolation layer 103 and the passivation layer 301 correspond to flexible material layers of 2×2mm in size 2 -4×4mm 2 The thickness is 30 μm-200 μm. The shape may be square, circular, rectangular, etc., without limitation.
In a first exemplary embodiment of the present disclosure, there is also provided a method for manufacturing a wireless energy receiving end device, including:
step S100: a first layer of coil metal 101 and a capacitor bottom electrode metal layer 102 are fabricated sequentially on a substrate 100. Further, a capacitor dielectric layer 104 is formed on the capacitor bottom electrode metal layer 102.
Specifically, the fabrication of the first layer coil metal 101 includes: spin-coating photoresist on a substrate 100, exposing, developing and baking to form first patterned photoresist; plating metal by ion-enhanced chemical vapor deposition (PECVD), sputtering (sputter), electron beam Evaporation (EB), atomic Layer Deposition (ALD) and the like; finally, a first layer of coil metal 101 is formed on the substrate 100 after stripping, chemical etching, reactive ion beam etching, and cleaning. Wherein. The first layer coil metal 101 is made of one or any combination of Cu, al, pt, au, cr, ti and Ni.
Specifically, the fabrication of the capacitor bottom electrode metal layer 102 includes: on the basis of the first layer of coil metal 101 being manufactured, photoresist is coated on the substrate 100 in a spin mode again, and after exposure, development and baking, second patterned photoresist is formed; then, metal is plated by ion-enhanced chemical vapor deposition (PECVD), sputtering (sputtering), electron beam Evaporation (EB), atomic Layer Deposition (ALD), and the like, and finally, stripping, chemical etching, reactive ion beam etching and cleaning are performed to form a capacitor bottom electrode metal layer 102 on the substrate 100. The preparation material of the capacitor lower electrode metal layer 102 is one or any combination of Cu, al, pt, au, cr, ti and Ni.
Specifically, the manufacturing of the capacitor dielectric layer 104 on the capacitor bottom electrode metal layer 102 includes: after the first coil metal layer 101 and the capacitor lower electrode metal layer 102 are manufactured, photoresist is coated on the substrate 100 in a spin mode again, and after exposure, development and baking, third patterned photoresist is formed; then, an insulating dielectric layer is plated through sputtering or atomic layer deposition, and a capacitance dielectric layer 104 is formed on the capacitance lower electrode metal layer 102 after stripping, chemical etching and cleaning. Wherein, the preparation material of the capacitance medium layer 104 is Ta 2 O 5 、Si 3 N 4 、SiO 2 、TiO 2 One of PET, PDMS, or any combination thereof.
Step S200: a patterned first isolation layer 1031 is fabricated over the substrate 100, the first coil metal layer, and the capacitive dielectric layer 104, respectively.
Specifically, a flexible first isolation layer 1031 is spin-coated on the basis of step S100, and then the patterned first isolation layer 1031 is formed by photolithography. The first isolation layer 1031 is made of one or any combination of SU-8 and PET, PDMS, PI, AZ photoresist.
Step S300: the LED light emitting chip 205 and the schottky diode u-GaN201 are transferred onto the first separation layer 1031 by a transfer method.
Specifically, the LED light emitting chip 205 and the schottky diode u-GaN201 are transferred onto the first isolation layer 1031 by a transfer method. Wherein. The LED light chip 205 may be selected from one or any combination of light chips ranging from near infrared to near ultraviolet.
Step S400: a second layer of coil metal 203, a first capacitor top electrode metal layer 2021, a second capacitor top electrode metal layer 2022, and a schottky diode schottky contact metal 204 are fabricated on the structure of step S300. It should be appreciated by those skilled in the art that the first capacitor upper electrode metal layer 2021 may also serve as an ohmic contact metal for the schottky diode.
Specifically, photoresist is spin-coated on the substrate 100 again, and after exposure, development and baking, fourth patterned photoresist is formed; then plating metal by ion-enhanced chemical vapor deposition (PECVD), sputtering (sputtering), electron beam Evaporation (EB), atomic Layer Deposition (ALD) and the like, and then stripping, chemical etching, reactive ion beam etching and cleaning to form a second coil metal 203 and a first capacitor upper electrode metal layer 2021. The second coil metal 203 and the first capacitor upper electrode metal layer 2021 are made of one or any combination of Cu, al, pt, au, cr, ti and Ni. The second capacitor upper electrode metal layer 2022 and the third isolation layer 1033 are formed on the capacitor dielectric layer 104 in the same manner, and will not be described herein. It should be appreciated that the second isolation layer 1032 and the third isolation layer 1033 refer to the preparation method of the first isolation layer 1031, and are not described herein.
Specifically, forming schottky diode schottky contact metal 204 on the isolation region includes: spin-coating photoresist on the first isolation layer 1031 again, exposing, developing and baking to form fifth patterned photoresist; metal is plated by ion-enhanced chemical vapor deposition (PECVD), sputtering (sputter), electron beam Evaporation (EB), atomic Layer Deposition (ALD), etc., and then stripped, chemically etched, reactive ion beam etched, cleaned, annealed to form schottky diode schottky contact metal 204. It should be understood by those skilled in the art that the metal used for ohmic contact may be used for the capacitor bottom electrode metal layer 102, the first capacitor top electrode metal 2021, and the second capacitor top electrode metal 2022 as well, but the metal used for schottky contact is different, and for schottky diode u-GaN201, one or any combination of the metals of schottky diode schottky contact metal 204 may be selected as Al, ni, au, pt, ir, mo, pd, ti, W. Al/Ni/Au alloys are preferred.
Step S500: the passivation layer 301 is spin-coated on the structure of step S400 as a protection.
Specifically, a flexible passivation layer 301 is spin-coated as a protective layer for the device on the basis of step S400. The passivation layer 301 is made of one or any combination of SU-8 and PET, PDMS, PI, AZ photoresist. After the passivation layer 301 is cured, the entire wireless energy receiving device is prepared.
Thus, embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that, in the drawings or the text of the specification, implementations not shown or described are all forms known to those of ordinary skill in the art, and not described in detail. Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be simply modified or replaced by those of ordinary skill in the art.
From the foregoing description, those skilled in the art will clearly recognize that the present disclosure is directed to a wireless energy-supplying flexible lighting system and a method for manufacturing a wireless energy receiving terminal device thereof.
In summary, the resonant wireless energy transmission technology is utilized in the present disclosure, so that the problem that the receiving end needs to be connected by a wire to supply power is avoided, and the wireless energy receiving end device adopts the flexible material layer with low young modulus, so that the wireless energy receiving end device has good application prospects in the fields requiring light source stimulation, such as 'electronic skin', 'optogenetic probe', and 'human artificial limb'.
It should be further noted that, the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings, and are not intended to limit the scope of the present disclosure. Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or constructions will be omitted when they may cause confusion in understanding the present disclosure.
And the shapes and dimensions of the various elements in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. In addition, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise known, numerical parameters in this specification and the appended claims are approximations that may vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". In general, the meaning of expression is meant to include a variation of + -10% in some embodiments, a variation of + -5% in some embodiments, a variation of + -1% in some embodiments, and a variation of + -0.5% in some embodiments by a particular amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the description and the claims to modify a corresponding element does not by itself connote any ordinal number of elements or the order of manufacturing or use of the ordinal numbers in a particular claim, merely for enabling an element having a particular name to be clearly distinguished from another element having the same name.
Furthermore, unless specifically described or steps must occur in sequence, the order of the above steps is not limited to the list above and may be changed or rearranged according to the desired design. In addition, the above embodiments may be mixed with each other or other embodiments based on design and reliability, i.e. the technical features of the different embodiments may be freely combined to form more embodiments.
Similarly, it should be appreciated that in the above description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be construed as reflecting the intention that: i.e., the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (8)
1. A wireless-powered flexible lighting system, comprising:
wireless energy transmitting end device for converting electric energy into electromagnetic wave energy capable of propagating in free space;
the wireless energy receiving end device is used for receiving electromagnetic wave energy emitted by the wireless energy emitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the wireless energy receiving end device comprises:
the substrate and the passivation layer are flexible material layers;
a wireless energy receiving coil, comprising:
a first layer of coil metal grown on the substrate; and
a second layer of coil metal grown on the first layer of coil metal;
a first isolation layer grown on the substrate; the first isolation layer is a flexible material layer; the first isolation layer is adjacent to the first layer of coil metal;
a second isolation layer grown on the first layer of coil metal, wherein the second layer of coil metal is isolated by the second isolation layer; the second isolation layer is a flexible material layer; and
and the LED light-emitting chip is transferred onto the first isolation layer and is connected with the second layer of coil metal.
2. The wireless-powered flexible lighting system of claim 1, wherein the energy receiving-end device further comprises:
a capacitor lower electrode metal layer which is grown on the substrate, and the first isolation layer is adjacent to the capacitor lower electrode metal layer at the same time;
a capacitor dielectric layer which is grown on the capacitor lower electrode metal layer;
the second capacitor upper electrode metal layer is grown on the capacitor dielectric layer and is connected with the LED light-emitting chip;
the third isolation layer is grown on the capacitor dielectric layer and is adjacent to the second capacitor upper electrode metal layer; the third isolation layer is a flexible material layer.
3. The wireless-powered flexible lighting system of claim 2, further comprising:
a Schottky diode u-GaN grows on the first isolation layer;
the first capacitor upper electrode metal layer is grown on the capacitor lower electrode metal layer; one end of the first capacitor upper electrode metal layer is connected with the Schottky diode u-GaN; the other end of the first capacitor upper electrode metal layer is adjacent to the third isolation layer;
and the Schottky contact metal of the Schottky diode is grown on the same first isolation layer as the Schottky diode u-GaN and is connected with the Schottky diode u-GaN.
4. A wirelessly-powered flexible hair according to claim 1An optical system, wherein the LED light emitting chip has a size of 30×30 μm 2 -200×200μm 2 。
5. The wireless-powered flexible lighting system as set forth in claim 1 wherein the substrate, barrier layer and passivation layer correspond to a flexible material layer size of 2 x 2mm 2 -4×4mm 2 The thickness is 30 μm-200 μm.
6. A method for preparing a wireless energy receiving end device, comprising:
step S100: respectively manufacturing a first layer of coil metal and a patterned first isolation layer on a substrate;
step S200: manufacturing a patterned second isolation layer on the first layer of coil metal;
step S300: transferring the LED light-emitting chip onto the first isolation layer by a transfer printing method;
step S400: manufacturing a second layer of coil metal on the first layer of coil metal; the second layer of coil metal is connected with the LED light-emitting chip;
step S500: a passivation layer is spin-coated on the structure of the step S400 as a protection.
7. The method for manufacturing a wireless energy receiving terminal device according to claim 6, wherein,
the step S100 further includes: manufacturing a capacitor lower electrode metal layer on the substrate; then, a capacitance medium layer is manufactured on the prepared capacitance lower electrode metal layer;
step S200 further includes: manufacturing a patterned third isolation layer on the capacitance medium layer;
step S400 further includes: and manufacturing a second capacitor upper electrode metal layer on the capacitor dielectric layer.
8. The method for manufacturing a wireless energy receiving terminal device according to claim 7, wherein,
step S300 further includes: transferring the schottky diode u-GaN to the first isolation layer by a transfer method;
step S400 further includes: manufacturing a Schottky contact metal of the Schottky diode on the first isolation layer; and manufacturing a first capacitor upper electrode metal layer on the capacitor lower electrode metal layer.
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