CN111341905A - Novel magnetic sensitive device and preparation method thereof - Google Patents
Novel magnetic sensitive device and preparation method thereof Download PDFInfo
- Publication number
- CN111341905A CN111341905A CN202010156391.1A CN202010156391A CN111341905A CN 111341905 A CN111341905 A CN 111341905A CN 202010156391 A CN202010156391 A CN 202010156391A CN 111341905 A CN111341905 A CN 111341905A
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetic
- sensitive device
- aluminum oxide
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000696 magnetic material Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 19
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 10
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
- 239000010980 sapphire Substances 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001172 neodymium magnet Inorganic materials 0.000 claims description 6
- 229910019236 CoFeB Inorganic materials 0.000 claims description 3
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 claims description 3
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001883 metal evaporation Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a novel magnetic sensor and a preparation method thereof, wherein the preparation method comprises the following steps: 1) growing a high-resistance GaN buffer layer on the sapphire substrate; 2) growing an intrinsic doped GaN layer on the high-resistance GaN buffer layer; 3) selectively depositing a layer of aluminum oxide on the intrinsic doped GaN layer; 4) growing a layer of magnetic film on the alumina, and forming a ball or column structure by photoetching and etching processes; 5) an interdigitated metal electrode is deposited on the region of the intrinsically doped GaN layer that is free of alumina. The invention innovatively utilizes the surface acoustic wave resonance effect and the magnetic material sensitivity characteristic to the magnetic field, and changes the surface acoustic wave propagation characteristic of the GaN material through the magnetostriction effect, so that the resonance frequency of the acoustic wave is shifted, and the high-sensitivity detection of the magnetic field is realized.
Description
Technical Field
The invention relates to the field of magnetic detection, in particular to a novel magnetic sensitive device and a preparation method thereof.
Background
GaN is one of the third generation wide bandgap semiconductor materials, has the advantages of high breakdown electric field, high electron saturation speed, capability of working at high temperature and the like, shows good application prospect in the aspects of power electronic devices and the like, and has attracted wide attention. Currently, power electronic devices with various application requirements have been developed and designed by using the characteristics of GaN epitaxial materials, and new devices with new structures are also being designed and developed for more applications in the future.
Magnetic material refers to a functional material that is capable of reacting in some way to the presence of a magnetic field. Due to the unique magnetization characteristic of the magnetic material, the magnetic material has wide application in the fields of industrial manufacturing, biomedicine, geology, archaeology, aerospace, military and the like. In view of the advantages of the GaN material and the magnetic material, when the GaN material and the magnetic material are combined, the complementary characteristics of the GaN material and the magnetic material are utilized to prepare a novel sensing device suitable for high-temperature, high-pressure and high-magnetic-field environments, and a good application and development prospect is brought to the application fields of magnetic field monitoring and the like.
Disclosure of Invention
Based on the application and development prospect, the invention innovatively provides a novel magnetic sensing device and a preparation method thereof, which not only utilize the unique excellent physical characteristics of GaN materials and magnetic materials, but also utilize the surface acoustic wave resonance effect to convert magnetic field signals into acoustic wave resonance signals, and output resonance frequency signals through output interdigital electrodes, thereby meeting the requirement of rapid and highly sensitive magnetic field detection.
The specific method comprises the following steps:
1) growing a high-resistance GaN buffer layer on the sapphire substrate;
2) growing an intrinsic doped GaN layer on the high-resistance GaN buffer layer;
3) selectively depositing a layer of aluminum oxide on the intrinsic doped GaN layer;
4) growing a layer of magnetic film on the alumina, and forming a magnetic ball or a magnetic column by photoetching and etching processes;
5) an interdigitated metal electrode is deposited on the region of the intrinsically doped GaN layer that is free of alumina.
Preferably, the thickness of the high-resistance GaN buffer layer in the step 1) is 0.2-4 μm;
preferably, the thickness of the intrinsic doped GaN layer in the step 2) is 0.5-2 μm;
preferably, the thickness of the aluminum oxide passivation layer in the step 3) is 20 nm-200 nm;
preferably, the magnetic thin film material in 4) is a magnetic alloy thin film material such as cobalt iron boron (CoFeB), neodymium iron boron (NdFeB), nickel cobalt (NiCo), etc.;
preferably, the diameter or thickness of the magnetic sphere or magnetic column in 4) is 100nm to 500 nm;
preferably, the interdigital metal electrodes in 5) are positioned on both sides of the aluminum oxide and take the central area of the aluminum oxide as a symmetry center;
preferably, in the GaN-based magnetically sensitive device manufactured by the above method, the transmission characteristics between the input end interdigital metal electrode and the output end interdigital metal electrode are changed according to the change of the magnetic field around the spherical magnetic material.
The detector structure of the invention is schematically shown in figure 1 in a top view, wherein interdigital metal electrodes 4 and 7 are respectively a signal input end and a signal output end, and 5 and 6 are respectively an alumina dielectric film and regularly arranged spherical magnetic materials. By utilizing the surface acoustic wave resonance effect, under the condition of no magnetic field, stable input signals and output signals can be generated at the input end 4 and the output end 7; when a magnetic field perpendicular to the surface is applied above the magnetic material, under the influence of the magnetostrictive effect, the resonance frequency characteristics of the surface acoustic wave are changed when the surface acoustic wave is transmitted in the arranged spherical magnetic material region, which causes the acoustic wave resonance frequency signal at the output end 7 to shift, as shown in fig. 2. The cross-sectional structure along the AA' line is shown in fig. 3, the device structure is prepared on an i-GaN/GaN/sapphire epitaxial material, and the advantages of the GaN material such as thermal stability, reliability and the like are fully utilized, so that the device can work in a more complex environment.
The invention has the advantages that:
A. the invention has the characteristics of high speed, high sensitivity and low power consumption.
B. The invention can work in complex environments such as high temperature, high pressure and the like.
Drawings
In order to make the object, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings for explanation:
FIG. 1 is a schematic top view of the present invention.
Fig. 2 is a schematic diagram of the acoustic resonance signal of the present invention.
FIG. 3 is a schematic diagram of the two-dimensional vertical cross-sectional structure along line AA' of the present invention.
Fig. 4, 5 and 6 are flow charts of the preparation process of the invention.
Wherein, the sapphire substrate 1, the high-resistance GaN buffer layer 2, the intrinsic GaN layer 3, the input end interdigital metal electrode 4, and the aluminum oxide (Al)2O3) Layer 5, spherical magnetic material 6 and output end interdigital metal electrode 7.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present embodiment provides a novel magnetic sensor and a method for manufacturing the same, wherein the cross section of the magnetic sensor is shown in fig. 3, and the magnetic sensor comprises a sapphire substrate 1, a high-resistance GaN buffer layer 2, an intrinsic GaN layer 3, an input end interdigital metal electrode 4, and aluminum oxide (Al)2O3) Layer 5, spherical magnetic material 6 and output end interdigital metal electrode 7.
Example 1
The specific preparation process flow is shown in fig. 4, and comprises the following steps:
1) the sapphire substrate 1 was sampled, and the surface thereof was pretreated.
2) Epitaxially growing a high-resistance GaN buffer layer 2 with the thickness of 1 mu m and an intrinsic doping GaN layer 3 with the thickness of 0.5 mu m on the substrate in sequence;
3) depositing 20nm thick aluminum oxide (Al) on the clean intrinsic doped GaN layer 3 using an Atomic Layer Deposition (ALD) apparatus2O3) Layer 5.
4) In clean alumina (Al)2O3) On the layer 5, a layer of neodymium iron boron (NdFeB) magnetic material is grown and then turned onAnd etching the magnetic material into a spherical or cylindrical structure 6 with the diameter of 100nm in periodic arrangement by a wet or dry etching method.
5) Selectively etching away part of the spherical or cylindrical structural material 6 and aluminum oxide (Al) by photoetching and etching process2O3) Layer 5.
6) And depositing the interdigital metal electrodes 4 and 7 by utilizing photoetching and metal evaporation technology.
Example 2
The specific preparation process flow is shown in fig. 5, and comprises the following steps:
1) the sapphire substrate 1 was sampled, and the surface thereof was pretreated.
2) Epitaxially growing a 2-micron-thick high-resistance GaN buffer layer 2 and a 1.5-micron-thick intrinsic doped GaN layer 3 on the substrate in sequence;
3) depositing 100nm thick aluminum oxide (Al) on the clean intrinsic-doped GaN layer 3 using an Atomic Layer Deposition (ALD) apparatus2O3) Layer 5.
4) In clean alumina (Al)2O3) On the layer 5, a layer of cobalt-iron-boron (CoFeB) magnetic material grows, and then the magnetic material is etched into a spherical or columnar structure 6 with the diameter of 120nm in periodic arrangement by a wet etching method or a dry etching method.
5) Selectively etching away part of the spherical or cylindrical structural material 6 and aluminum oxide (Al) by photoetching and etching process2O3) Layer 5.
6) And depositing the interdigital metal electrodes 4 and 7 by utilizing photoetching and metal evaporation technology.
Example 3
The specific preparation process flow is shown in fig. 6, and comprises the following steps:
1) the sapphire substrate 1 was sampled, and the surface thereof was pretreated.
2) Epitaxially growing a high-resistance GaN buffer layer 2 with the thickness of 3 microns and an intrinsic doping GaN layer 3 with the thickness of 1.8 microns on the substrate in sequence;
3) depositing 150nm thick aluminum oxide (Al) on the clean intrinsic-doped GaN layer 3 using an Atomic Layer Deposition (ALD) apparatus2O3) Layer 5.
4) In clean alumina (Al)2O3) On the layer 5, a layer of nickel cobalt (NiCo) magnetic material is grown, and then the magnetic material is etched into a periodic arrangement of spherical or columnar structures 6 with a diameter of 200nm by a wet or dry etching method.
5) Selectively etching away part of the spherical or cylindrical structural material 6 and aluminum oxide (Al) by photoetching and etching process2O3) Layer 5.
6) And depositing the interdigital metal electrodes 4 and 7 by utilizing photoetching and metal evaporation technology.
In the GaN-based magnetic sensitive device produced by the invention, under the condition of no magnetic field, stable input signals and output signals can be generated at the input end 4 and the output end 7; when a magnetic field vertical to the surface is applied above the magnetic material, the influence of the magnetostrictive effect is exerted, the resonance frequency characteristic of the surface acoustic wave is changed when the surface acoustic wave is transmitted in the arranged spherical magnetic material region, so that the acoustic wave resonance frequency signal of the output end 7 is deviated, the device structure is prepared on the i-GaN/GaN/sapphire epitaxial material, the advantages of the GaN material such as thermal stability and reliability are fully utilized, and the device can work in a complex environment. Therefore, the GaN-based magnetic sensor device of the embodiment has the characteristics of high speed, high sensitivity and low power consumption. And can work in more complex environments such as high temperature, high pressure and the like.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (8)
1. A novel preparation method of a magnetic sensitive device is characterized by comprising the following steps: the method comprises the following steps:
1) growing a high-resistance GaN buffer layer on the sapphire substrate;
2) growing an intrinsic doped GaN layer on the high-resistance GaN buffer layer;
3) selectively depositing a layer of aluminum oxide on the intrinsic doped GaN layer;
4) growing a layer of magnetic film on the alumina, and forming a ball or column structure by photoetching and etching processes;
5) and depositing interdigital metal electrodes on the intrinsic doped GaN layer region without the aluminum oxide.
2. The method for preparing a novel magnetic sensitive device according to claim 1, characterized in that: the thickness of the high-resistance GaN buffer layer in the step 1) is 0.2-4 μm.
3. The method for preparing a novel magnetic sensitive device according to claim 1, characterized in that: the thickness of the intrinsic doped GaN layer in the step 2) is 0.5-2 μm.
4. The method for preparing a novel magnetic sensitive device according to claim 1, characterized in that: the thickness of the aluminum oxide passivation layer in the step 3) is 20 nm-200 nm.
5. The method for preparing a novel magnetic sensitive device according to claim 1, characterized in that: the magnetic film material in the step 4) is a magnetic alloy film material such as cobalt iron boron (CoFeB), neodymium iron boron (NdFeB), nickel cobalt (NiCo) and the like.
6. The method for preparing a novel magnetic sensitive device according to claim 1, characterized in that: the diameter or thickness of the spherical or columnar structure in the step 4) is 100 nm-500 nm.
7. The method for preparing a novel magnetic sensitive device according to claim 1, characterized in that: in the step 5), the input end of the interdigital metal electrode is positioned on two sides of the aluminum oxide and the central area of the aluminum oxide is taken as a symmetrical center.
8. The novel magnetic sensor device prepared by the preparation method of the novel magnetic sensor device according to any one of claims 1 to 7, wherein the transmission characteristic between the input end and the output end of the interdigital metal electrode is changed according to the change of the magnetic field around the spherical magnetic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010156391.1A CN111341905A (en) | 2020-03-09 | 2020-03-09 | Novel magnetic sensitive device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010156391.1A CN111341905A (en) | 2020-03-09 | 2020-03-09 | Novel magnetic sensitive device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111341905A true CN111341905A (en) | 2020-06-26 |
Family
ID=71187926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010156391.1A Pending CN111341905A (en) | 2020-03-09 | 2020-03-09 | Novel magnetic sensitive device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111341905A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110269250A1 (en) * | 2010-05-03 | 2011-11-03 | Nanjing University | Growth method of fe3n material |
| CN103779463A (en) * | 2014-01-28 | 2014-05-07 | 苏州强明光电有限公司 | Spin-photoelectron device and spin injection method thereof |
| US20170178788A1 (en) * | 2015-12-22 | 2017-06-22 | International Business Machines Corporation | Laminated structures for power efficient on-chip magnetic inductors |
-
2020
- 2020-03-09 CN CN202010156391.1A patent/CN111341905A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110269250A1 (en) * | 2010-05-03 | 2011-11-03 | Nanjing University | Growth method of fe3n material |
| CN103779463A (en) * | 2014-01-28 | 2014-05-07 | 苏州强明光电有限公司 | Spin-photoelectron device and spin injection method thereof |
| US20170178788A1 (en) * | 2015-12-22 | 2017-06-22 | International Business Machines Corporation | Laminated structures for power efficient on-chip magnetic inductors |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Gogneau et al. | From single III-nitride nanowires to piezoelectric generators: New route for powering nomad electronics | |
| CN110729396B (en) | Magnetoelectric film sensor with self-amplification capability | |
| CN115207207B (en) | Method for manufacturing high-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure | |
| CN108039406B (en) | Magnetic sensor, preparation method and use method thereof | |
| CN110729394A (en) | Negative resistance type GaN pressure sensor and preparation method thereof | |
| CN110890457B (en) | High-temperature Hall sensor integrating back vertical type and front horizontal type three-dimensional magnetic field detection functions and manufacturing method thereof | |
| CN103605150A (en) | Schottky neutron detector and manufacturing method thereof | |
| CN111487475A (en) | Passive low-power-consumption microwave detection method | |
| CN109244132A (en) | Transistor and Magnetic Sensor based on mangneto piezoelectricity gesture | |
| CN111341905A (en) | Novel magnetic sensitive device and preparation method thereof | |
| CN107941391B (en) | Wireless passive temperature compensation method for film body acoustic wave pressure sensor | |
| WO2015049598A1 (en) | Mems pressure sensor with a high electron mobility transistor and a production method thereof | |
| CN108469315B (en) | Pressure sensor unit based on electric conductivity of oxygen vacancy electron gas of ferroelectric domain wall | |
| CN110459471B (en) | Preparation method of GaN-based pH sensor with double-gate structure | |
| CN108054273B (en) | Field effect transistor type magnetic sensor, preparation method and use method thereof | |
| CN114659540B (en) | High-sensitivity surface acoustic wave vector magnetic field sensing system based on magnetic bias structure | |
| CN110911548B (en) | High-temperature three-dimensional Hall sensor with real-time working temperature monitoring function and manufacturing method thereof | |
| CN207938659U (en) | A kind of Magnetic Sensor | |
| CN116847720A (en) | Cross-shaped high-temperature three-dimensional Hall sensor and preparation method thereof | |
| Zhang et al. | AlGaN/GaN magnetic sensors featuring heterojunction 2DEG channel | |
| CN113270491B (en) | High-sensitivity pressure sensor and preparation method thereof | |
| CN111312892B (en) | Magnetic sensor with ultrahigh three-dimensional magnetic field detection sensitivity and manufacturing method thereof | |
| CN113567898A (en) | Low-frequency MEMS (micro-electromechanical system) magnetoresistive sensor modulated by magnetoresistive motion | |
| CN106645323B (en) | Polar solvent chemical sensor and preparation method based on oxide heterojunction | |
| CN105352636B (en) | GaN pressure sensors and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20231117 |
|
| AD01 | Patent right deemed abandoned |