CN111334761A - Method for preparing CVD diamond wafer with surface covered with metal grid - Google Patents
Method for preparing CVD diamond wafer with surface covered with metal grid Download PDFInfo
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- CN111334761A CN111334761A CN202010256278.0A CN202010256278A CN111334761A CN 111334761 A CN111334761 A CN 111334761A CN 202010256278 A CN202010256278 A CN 202010256278A CN 111334761 A CN111334761 A CN 111334761A
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- cvd diamond
- diamond wafer
- metal grid
- coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
Abstract
The invention relates to the technical field of semiconductor technology and optical engineering, and discloses a method for preparing a CVD diamond wafer with a surface covered with a metal grid, which comprises the following steps: s1, screening the CVD diamond wafer with the required size, putting the CVD diamond wafer into warm water to clean and remove impurities and dirt of the CVD diamond wafer, putting the cleaned CVD diamond wafer into a dryer to carry out quick drying for 5-7 min; s2, taking the PVC mask belt, cutting the PVC mask belt into a required size, and fixing the PVC mask belt on the CVD diamond wafer by using a high-temperature adhesive tape; s3, performing pre-coating treatment on the CVD diamond wafer bonded with the PVC mask belt, putting the CVD diamond wafer bonded with the PVC mask belt into an electron beam evaporation coating machine cavity after the pre-coating treatment, and vacuumizing the electron beam evaporation coating machine cavity to below 3E-7 Pa. The method for preparing the CVD diamond wafer with the surface covered with the metal grid can quickly form the metal grid on the surface of the CVD diamond wafer and can reduce the preparation cost.
Description
Technical Field
The invention relates to the technical field of semiconductor technology and optical engineering, in particular to a method for preparing a CVD diamond wafer with a surface covered with a metal grid.
Background
CVD diamond is a polycrystalline diamond synthesized from diamond wafers of 10 to 30 nanometers in diameter. The wafer made of CVD diamond is a commonly used element in semiconductor process and optical engineering, compared with the traditional semiconductor element, the cost of the CVD diamond wafer is lower, the manufacturing cost of a semiconductor component can be greatly reduced, the laser-tolerant threshold of the CVD diamond wafer is higher, and the service life of the optical element can be prolonged.
In the existing method for preparing the CVD diamond wafer with the surface-covered metal grating, the special-shaped metal electrode and the CVD diamond wafer are difficult to connect, so that the CVD diamond wafer is difficult to cover the surface with the metal grating, and the production efficiency of the CVD diamond wafer with the surface-covered metal grating is low.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a method for preparing a surface-coated metal grid CVD diamond wafer, which has the advantage of improving the production efficiency of the surface-coated metal grid CVD diamond wafer and solves the problem of lower preparation efficiency of the existing method for preparing the surface-coated metal grid CVD diamond wafer.
(II) technical scheme
In order to achieve the purpose of improving the production efficiency of the CVD diamond wafer with the surface covered with the metal grid, the invention provides the following technical scheme: a method for preparing a CVD diamond wafer with a surface covered with a metal grid comprises the following steps:
s1, screening the CVD diamond wafer with the required size, putting the CVD diamond wafer into warm water to clean and remove impurities and dirt of the CVD diamond wafer, putting the cleaned CVD diamond wafer into a dryer to carry out quick drying for 5-7 min;
s2, taking the PVC mask belt, cutting the PVC mask belt into a required size, and fixing the PVC mask belt on the CVD diamond wafer by using a high-temperature adhesive tape;
s3, performing pre-coating treatment on the CVD diamond wafer bonded with the PVC mask belt, putting the CVD diamond wafer bonded with the PVC mask belt into an electron beam evaporation coating machine cavity after the pre-coating treatment, vacuumizing the electron beam evaporation coating machine cavity to be below 3E-7Pa, and starting coating the required metal material;
s4, observing a coating thickness instrument to monitor the coating thickness, closing the electron beam evaporation coating machine when the coating thickness reaches the required thickness, finishing coating, taking the CVD diamond wafer out of the electron beam evaporation coating machine for cooling for 2-3 min;
and S5, removing the high-temperature adhesive tape and the PVC masking tape on the cooled CVD diamond wafer, and forming a metal grid on the part which is not covered by the PVC masking tape to finish the preparation of the CVD diamond wafer with the metal grid covered on the surface.
Preferably, the pretreatment of plating in step S3 is: cleaning a CVD diamond wafer by using glass liquid, then putting deionized water into the CVD diamond wafer for rinsing, blowing the CVD diamond wafer by using nitrogen after rinsing, and then cleaning the CVD diamond wafer for 15min by using acetone and absolute ethyl alcohol with the purity of 99.9 percent respectively by ultrasonic waves.
Preferably, after the step S4 is completed, a Lambda900 spectrophotometer is used to perform a coating spectrum test on the coated CVD diamond wafer, so as to detect whether the coating is qualified.
Preferably, after the step S1, the CVD diamond wafer is cleaned with an oil removal agent to remove oily dirt on the surface of the CVD diamond wafer.
Preferably, the surface roughness Ra of the CVD diamond wafer is less than 10nm, and the transmissivity is more than 90% per centimeter in the wave band of 400-2000 nm.
Preferably, the specific composition of the oil removing agent is 0.3-0.5 nanometer oil removing emulsifier, 0.4-0.6 water and 0.1-0.2 sodium silicate.
Preferably, the hardness of the PVC mask tape is 10 degrees or 40 degrees.
(III) advantageous effects
Compared with the prior art, the invention provides a method for preparing a CVD diamond wafer with a surface covered with a metal grid, which has the following beneficial effects:
1. according to the method for preparing the CVD diamond wafer with the surface covered with the metal grid, through the steps of S1, S2, S3, S4 and S5, the surface of the CVD diamond wafer can be quickly coated through an electron beam evaporation coating machine, the metal grid can be quickly formed on the surface of the CVD diamond wafer through the mutual matching of the PVC masking tape and the high-temperature adhesive tape, the PVC masking tape can be repeatedly used, the preparation cost is reduced, and compared with the traditional preparation method, the method can quickly form the metal grid on the surface of the CVD diamond wafer and can reduce the preparation cost.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A method for preparing a CVD diamond wafer with a surface covered with a metal grid comprises the following steps:
s1, screening the CVD diamond wafer with the required size, putting the CVD diamond wafer into warm water to clean and remove impurities and dirt of the CVD diamond wafer, putting the cleaned CVD diamond wafer into a dryer to carry out quick drying for 5-7 min;
s2, taking a PVC mask tape, cutting the PVC mask tape into required sizes, fixing the PVC mask tape on a CVD diamond wafer by using a high-temperature adhesive tape, wherein the high-temperature adhesive tape is an adhesive tape used in a high-temperature operation environment and mainly used for the electronic industry, the temperature resistance is usually 120-260 ℃, the PVC mask tape can be used in the high-temperature environment without being damaged, the surface of the CVD diamond wafer cannot be damaged, the adhesiveness is good, the PVC mask tape can be stably fixed, and the PVC mask tape is convenient to separate from the PVC mask tape; the PVC mask belt can block the part which does not need to be coated, so that a metal grid is formed at the required part, after the coating is finished, the PVC mask belt can be taken down only by taking down the high-temperature adhesive tape, and the taken-down PVC mask belt can be recycled;
s3, performing pre-coating treatment on the CVD diamond wafer bonded with the PVC mask belt, and putting the CVD diamond wafer bonded with the PVC mask belt into a cavity of an electron beam evaporation coating machine, wherein the working principle of the electron beam evaporation coating machine is as follows: under high vacuum, the filament of the electron gun emits thermal electrons after being heated, the thermal electrons are accelerated by the accelerating anode to obtain great kinetic energy to bombard the evaporating material, the kinetic energy is converted into heat to heat and gasify the evaporating material, and the evaporation coating of the electron beam is realized. The energy of the electron beam evaporation source can be highly concentrated, so that the coating material locally reaches high temperature to be evaporated, the evaporation rate of the coating material can be conveniently controlled by adjusting the power of the electron beam, and particularly, the high melting point and high-purity metal and compound materials are facilitated, compared with the traditional resistance heating method, the electron beam heating method in the electron beam evaporation coating machine can generate higher flux density by electron beam heating, is more beneficial to the evaporation of the high melting point material, and can also improve the evaporation rate to a certain extent, the cavity of the electron beam evaporation coating machine is vacuumized to be below 3E-7Pa, and the coating of the required metal material is started;
s4, observing a coating thickness instrument to monitor the coating thickness, closing the electron beam evaporation coating machine when the coating thickness reaches the required thickness, finishing coating, taking the CVD diamond wafer out of the electron beam evaporation coating machine for cooling for 2-3 min;
s5, removing the high temperature adhesive tape and the PVC masking tape on the cooled CVD diamond wafer, forming a metal grid on the part which is not covered by the PVC masking tape, completing the preparation of the CVD diamond wafer with the metal grid covered on the surface, through the steps S1, S2, S3, S4 and S5, the surface of the CVD diamond wafer can be coated quickly through an electron beam evaporation coating machine, compared with the traditional resistance heating method, the electron beam heating method in the electron beam evaporation coating machine can generate higher flux density, is more beneficial to the evaporation of high melting point materials, and can also improve the evaporation rate to a certain extent, and through the mutual matching of the PVC masking tape and the high temperature adhesive tape, the surface of the CVD diamond wafer can form the metal grid quickly, and the PVC masking tape can be reused, the preparation cost is reduced, compared with the traditional preparation method, the method can quickly form the metal grating on the surface of the CVD diamond wafer and reduce the preparation cost.
The pretreatment for coating in step S3 is: cleaning a CVD diamond wafer by using glass liquid, then rinsing the CVD diamond wafer by putting deionized water, drying the CVD diamond wafer by using nitrogen after rinsing, and then cleaning the CVD diamond wafer by using acetone and absolute ethyl alcohol ultrasonic waves with the purity of 99.9% for 15min respectively, wherein the glass liquid mainly comprises water, alcohol, glycol and the like, and can be used for powerfully removing dirt and impurities of the CVD diamond wafer, eliminating charges on the surface of the CVD diamond wafer and removing static electricity on the surface of the CVD diamond wafer; deionized water is pure water from which impurities in an ion form are removed, and the deionized water is used for cleaning, so that the impurities in the ion form cannot be left on the surface of the CVD diamond wafer, and the cleaning effect is good; acetone and absolute ethyl alcohol ultrasonic waves with the purity of 99.9% can carry out ultrasonic high-intensity descaling on the CVD diamond wafer, and the surface of the CVD diamond wafer is guaranteed to be highly clean.
And step S4, performing film coating spectrum test on the coated CVD diamond wafer by using a Lambda900 spectrophotometer to detect whether the coated CVD diamond wafer is qualified or not, performing sampling detection on the coated product to detect whether the product is qualified or not, avoiding a large amount of defective products of the product, and ensuring the quality and the qualification rate of the surface-coated metal grid CVD diamond wafer.
And step S1, cleaning the CVD diamond wafer by using an oil removing agent to remove oily dirt on the surface of the CVD diamond wafer, wherein the oil removing agent can quickly clean the oily dirt on the surface of the CVD diamond wafer to keep the surface of the CVD diamond wafer clean, so that the film coating effect is prevented from being influenced by the oily dirt, and the surface of the CVD diamond wafer cannot be damaged.
The surface roughness Ra of the CVD diamond wafer is less than 10nm, and the transmissivity of the CVD diamond wafer at the waveband of 400-2000nm is more than 90% per centimeter, the CVD diamond wafer is prevented from being finely ground, so that the surface of the CVD diamond wafer has higher smoothness, the coating is more uniform, and the transmissivity of the CVD diamond wafer at the waveband of 400-2000nm is more than 90% per centimeter, and the optical performance of the CVD diamond wafer can be ensured.
The oil removing agent comprises 0.3-0.5 nanometer oil removing emulsifier, 0.4-0.6 water and 0.1-0.2 sodium silicate, and can rapidly clean oily dirt on the surface of the CVD diamond wafer, so that the surface of the CVD diamond wafer is kept clean, the film coating effect is prevented from being influenced by the oily dirt, and the surface of the CVD diamond wafer cannot be damaged.
The PVC mask belt with the hardness of 10 degrees or 40 degrees and the hardness of 10 degrees or 40 degrees has good toughness and good wear resistance, is suitable for various grinding-formed irregular surfaces, is matched with electroplating of various irregular terminals, can be repeatedly used, effectively reduces the film coating cost, and reduces the cost for preparing the CVD diamond wafer with the surface covered with the metal grating.
In summary, the method for preparing a surface-coated metal grid CVD diamond wafer can rapidly coat the surface of the CVD diamond wafer by the electron beam evaporation coater through the steps S1, S2, S3, S4 and S5, the electron beam heating method in the electron beam evaporation coater generates higher flux density compared with the conventional resistance heating method, the method is favorable for the evaporation of the material with high melting point, and can also improve the evaporation rate to a certain extent, and the PVC mask belt and the high-temperature adhesive tape are mutually matched to quickly form a metal grid on the surface of the CVD diamond wafer, and the PVC mask belt can be reused, so that the preparation cost is reduced.
It should be noted that the term "comprises/comprising" when used in this specification is taken to specify the presence of stated elements, integers, steps, operations, elements, components, and/or groups thereof, but does not exclude the presence or addition of other elements, integers, steps, operations, elements, components, and/or groups thereof. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A method for preparing a CVD diamond wafer with a surface covered by a metal grid is characterized by comprising the following steps:
s1, screening the CVD diamond wafer with the required size, putting the CVD diamond wafer into warm water to clean and remove impurities and dirt of the CVD diamond wafer, putting the cleaned CVD diamond wafer into a dryer to carry out quick drying for 5-7 min;
s2, taking the PVC mask belt, cutting the PVC mask belt into a required size, and fixing the PVC mask belt on the CVD diamond wafer by using a high-temperature adhesive tape;
s3, performing pre-coating treatment on the CVD diamond wafer bonded with the PVC mask belt, putting the CVD diamond wafer bonded with the PVC mask belt into an electron beam evaporation coating machine cavity after the pre-coating treatment, vacuumizing the electron beam evaporation coating machine cavity to be below 3E-7Pa, and starting coating the required metal material;
s4, observing a coating thickness instrument to monitor the coating thickness, closing the electron beam evaporation coating machine when the coating thickness reaches the required thickness, finishing coating, taking the CVD diamond wafer out of the electron beam evaporation coating machine for cooling for 2-3 min;
and S5, removing the high-temperature adhesive tape and the PVC masking tape on the cooled CVD diamond wafer, and forming a metal grid on the part which is not covered by the PVC masking tape to finish the preparation of the CVD diamond wafer with the metal grid covered on the surface.
2. A method of preparing a surface-coated metal grid CVD diamond wafer according to claim 1, wherein: the pretreatment of coating in step S3 is: cleaning a CVD diamond wafer by using glass liquid, then putting deionized water into the CVD diamond wafer for rinsing, blowing the CVD diamond wafer by using nitrogen after rinsing, and then cleaning the CVD diamond wafer for 15min by using acetone and absolute ethyl alcohol with the purity of 99.9 percent respectively by ultrasonic waves.
3. A method of preparing a surface-coated metal grid CVD diamond wafer according to claim 1, wherein: and (S4) performing a coating spectrum test on the coated CVD diamond wafer by using a Lambda900 spectrophotometer to detect whether the coating is qualified.
4. A method of preparing a surface-coated metal grid CVD diamond wafer according to claim 1, wherein: and (8) after the step (S1) is finished, cleaning the CVD diamond wafer by using an oil removal agent to remove oily dirt on the surface of the CVD diamond wafer.
5. A method of preparing a surface-coated metal grid CVD diamond wafer according to claim 1, wherein: the surface roughness Ra of the CVD diamond wafer is less than 10nm, and the transmissivity of the CVD diamond wafer is more than 90% per centimeter at the waveband of 400-2000 nm.
6. A method of preparing a surface-coated metal grid CVD diamond wafer according to claim 4, wherein: the oil removing agent comprises 0.3-0.5 nanometer oil removing emulsifier, 0.4-0.6 water and 0.1-0.2 sodium silicate.
7. A method of preparing a surface-coated metal grid CVD diamond wafer according to claim 1, wherein: the hardness of the PVC mask tape is 10 degrees or 40 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010256278.0A CN111334761A (en) | 2020-04-02 | 2020-04-02 | Method for preparing CVD diamond wafer with surface covered with metal grid |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010256278.0A CN111334761A (en) | 2020-04-02 | 2020-04-02 | Method for preparing CVD diamond wafer with surface covered with metal grid |
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| CN111334761A true CN111334761A (en) | 2020-06-26 |
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| CN202010256278.0A Pending CN111334761A (en) | 2020-04-02 | 2020-04-02 | Method for preparing CVD diamond wafer with surface covered with metal grid |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114425534A (en) * | 2021-12-13 | 2022-05-03 | 金华博蓝特新材料有限公司 | Method for cleaning sapphire substrate after copper polishing |
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| CA2020708A1 (en) * | 1989-07-10 | 1991-01-11 | Wei-Kan Chu | Coated substrates and process |
| CN105261555A (en) * | 2015-08-28 | 2016-01-20 | 中国科学院高能物理研究所 | Method for preparing metal electrode on diamond anvil cell |
| CN108682717A (en) * | 2018-06-07 | 2018-10-19 | 哈尔滨工业大学 | A kind of preparation method of diamond position sensitive detector |
| CN109192794A (en) * | 2018-09-12 | 2019-01-11 | 哈尔滨工业大学 | Enhanced interdigital electrode diamond ultraviolet detector of backboard and preparation method thereof |
| CN109301085A (en) * | 2018-09-30 | 2019-02-01 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
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2020
- 2020-04-02 CN CN202010256278.0A patent/CN111334761A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2020708A1 (en) * | 1989-07-10 | 1991-01-11 | Wei-Kan Chu | Coated substrates and process |
| CN105261555A (en) * | 2015-08-28 | 2016-01-20 | 中国科学院高能物理研究所 | Method for preparing metal electrode on diamond anvil cell |
| CN108682717A (en) * | 2018-06-07 | 2018-10-19 | 哈尔滨工业大学 | A kind of preparation method of diamond position sensitive detector |
| CN109192794A (en) * | 2018-09-12 | 2019-01-11 | 哈尔滨工业大学 | Enhanced interdigital electrode diamond ultraviolet detector of backboard and preparation method thereof |
| CN109301085A (en) * | 2018-09-30 | 2019-02-01 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114425534A (en) * | 2021-12-13 | 2022-05-03 | 金华博蓝特新材料有限公司 | Method for cleaning sapphire substrate after copper polishing |
| CN114425534B (en) * | 2021-12-13 | 2024-04-16 | 金华博蓝特新材料有限公司 | Method for cleaning sapphire substrate after copper polishing |
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