CN111326653A - High-transmission-speed GeSbTe phase-change material-based thin film device - Google Patents
High-transmission-speed GeSbTe phase-change material-based thin film device Download PDFInfo
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- 229910000618 GeSbTe Inorganic materials 0.000 title claims abstract description 71
- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 239000012782 phase change material Substances 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 374
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 258
- 239000010408 film Substances 0.000 claims abstract description 228
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 209
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000012071 phase Substances 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 22
- 239000011241 protective layer Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000007791 liquid phase Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 238000007493 shaping process Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 238000007731 hot pressing Methods 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 2
- -1 graphite alkene Chemical class 0.000 claims 2
- 230000008859 change Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011232 storage material Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910017311 Mo—Mo Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TVWWSIKTCILRBF-UHFFFAOYSA-N molybdenum trisulfide Chemical compound S=[Mo](=S)=S TVWWSIKTCILRBF-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
Abstract
The invention discloses a high-transmission-speed GeSbTe phase-change-material-based thin film device which comprises a substrate layer, a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer which are sequentially arranged, wherein the molybdenum disulfide layer is of a composite layered structure and comprises an upper MoS layer2Film layer and sandwich MoS2Film and lower MoS2Film layer, upper MoS2Film, lower MoS2The film layer is 2H phase MoS in a magnetron sputtering mode2Film, sandwich MoS2The film layer is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer. The improved GeSbTe phase-change material-based thin film device has the characteristics of high transmission speed, good product consistency and long service life.
Description
Technical Field
The invention relates to the field of phase change storage, in particular to a laminated phase-change thin film device with complementary multi-layer material performance.
Background
The phase change memory (PRAM) has the characteristics of strong shock resistance and radiation resistance as a nonvolatile storage technology, and has wide application prospect. GeSbTe storage material is the research hotspot of the current box transformer storage material.
Aiming at the fact that the traditional GeSbTe storage material adopts a mode of forming alloy by TiN or adopting Zn doping in the preparation process and has uncontrollable property, Chinese invention patent CN106374045A discloses a GeSbTe phase change material-based thin film device which comprises a substrate layer, a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the first GeSbTe material layer is an ion-doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material.
However, in the technical scheme, the resistance change phase change material layer is formed by mainly playing the friction increasing effect of molybdenum disulfide at high temperature and the synergistic effect of the second GeSbTe material layer, so that the product consistency is improved, and when the temperature of the copolymer of molybdenum disulfide, molybdenum trisulfide and molybdenum trioxide existing in molybdenum disulfide is sharply increased, molybdenum trioxide particles in the copolymer expand along with the temperature increase to realize the rapid phase change. Meanwhile, in the scheme, the molybdenum disulfide layer is formed by deposition in a magnetron sputtering mode, the molybdenum disulfide obtained by a CVD method is a 2H phase (space group, P63/mmc), the structure is very stable, the molybdenum disulfide is a direct band gap semiconductor, and the current switching ratio is up to 1010Of the order of magnitude of (1), but the mobility is only 200cm2.V-1.s-1The high speed transmission rate cannot be further increased.
Disclosure of Invention
The invention mainly aims to provide a GeSbTe phase-change material-based thin film device with high transmission speed, which has the characteristics of high transmission speed, good product consistency and long service life.
The invention can be realized by the following technical scheme:
the invention discloses a high-transmission-speed GeSbTe phase-change-material-based thin film device which comprises a substrate layer, a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and superposed on the substrate layer, the molybdenum disulfide layer is of a composite layered structure, and the molybdenum disulfide layer comprises an upper MoS2Film layer and sandwich MoS2Film and lower MoS2Film layer, upper MoS2Film, lower MoS2The film layer is 2H phase MoS in a magnetron sputtering mode2Film, sandwich MoS2The film layer is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer.
Further, MoS2Film, lower MoS2The film layer is TiN-MoS2A Ti film layer or TiN-MoS2A TiN film layer. Through setting up the doping rete, promote the inseparable degree that the compatibility of molybdenum disulfide layer and GST layer guaranteed its combination, avoid high temperature oxidation or vulcanize the degradation to molybdenum disulfide layer performance simultaneously.
Further, MoS2Film layer, sandwich MoS2 film layer, lower MoS2The thickness ratio of the film layer is 1:2: 1. Not only keeps the original switching characteristic, but also fully improves the transmission speed.
Further, after the first GeSbTe material layer is plated on the thin-film device, high-temperature hot-pressing shaping is carried out, and then the graphene layer is plated on the thin-film device. Through high-temperature hot-pressing shaping, the strain of the molybdenum disulfide of the 1T phase is promoted to form a ZT phase under the action of stress, the proportion of the ZT phase is increased, and the transmission speed is increased.
Further, sandwich MoS2The film layer is MoS obtained by ultrasonic dispersion and supercritical separation in a mode of coating and drying for multiple times2Solution coating under MoS2Coating MoS on the film layer after coating2And (5) film layer. And a method of coating for multiple times is adopted, so that the uniformity of the thickness of the film layer is effectively ensured, and the consistency of the product is ensured.
Further, at MoS2Film and sandwich MoS2A first sandwich MoS is arranged between the film layers2Inner film layer and first upper MoS2Intima layer, first Sandwich MoS2Structure of (2) and sandwich MoS2The film layer is the same, the first upper MoS2Inner film layer and upper MoS2Same film layer, upper MoS2Film layer, first sandwich MoS2Inner film layer, first upper MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement. A multilayer staggered structure is formed, the switching characteristics are effectively preserved, and the transmission speed is improved.
Further, under MoS2Film and sandwich MoS2A second sandwich MoS is arranged between the film layers2Intima layer and second lower MoS2Intima layer, second Sandwich MoS2Structure of (2) and sandwich MoS2The same film layer, MoS under the second2Inner film layer and lower MoS2Same film layer, lower MoS2Film layer, second sandwich MoS2Inner film layer, second lower MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
The improved GeSbTe phase-change material-based thin film device has the following beneficial technical effects:
firstly, the transmission speed is high, and 2H-1T co-phase MoS is introduced into the molybdenum disulfide layer2The molybdenum disulfide structure of the 1T phase of the film layer is poor in stability and easy to deform, molybdenum atoms move to form Mo-Mo sawtooth type (zigzag) strips in the longitudinal direction, the lattice constant is a =3.185A, b =5.725A, the ZT phase is always-38.80 eV more stable than the 1T phase, and the mobility of electrons and holes of the ZT phase can reach 104cm2.V-1.s-1The high mobility remarkably improves the transmission speed of the thin film device;
the second phase and the consistency are good, and the switching characteristic of the molybdenum disulfide of the 2H phase reaches 1010The level of (c). The switching characteristic of the introduced 1T phase molybdenum disulfide also reaches 105The grade of the phase change layer is determined, the structural design of the molybdenum disulfide of the sandwich layer does not substantially influence the effect of the resistance change phase change layer of the molybdenum disulfide layer, and the advantage of good consistency of products in the prior art is effectively kept;
thirdly, the service life is long, due to the fact that the transmission speed is remarkably improved, the continuous load time of the thin film device in the transmission process is effectively reduced, transmission fatigue caused by the fact that the thin film device is continuously in a high load state is caused, the transmission reliability is improved, and the service life of the device is prolonged; furthermore, TiN-MoS2A Ti film layer or TiN-MoS2The introduction of the TiN film layer can also effectively avoid the performance deterioration of the molybdenum disulfide layer caused by the high-temperature oxidation or the vulcanization of the molybdenum disulfide, and the use of the film can not be damaged even in a humid environment,effectively expanding the application scene and prolonging the service life of the system;
fourth, good bonding property, TiN-MoS2A Ti film layer or TiN-MoS2Due to the introduction of the TiN film layer, a metal lattice is formed on the surface of the molybdenum disulfide layer, and the first GST layer and the second GST layer which are combined with the molybdenum disulfide layer are both metal lattices, so that the interface compatibility and the binding force are better, the combination tightness of the molybdenum disulfide layer and the GST layer is ensured, the contact internal resistance is reduced, and the transmission speed is increased.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment 1 and an embodiment 2 of a thin-film device based on GeSbTe phase-change materials with high transmission speed according to the present invention;
FIG. 2 is a schematic structural diagram of an embodiment 3 of a high-transmission-speed GeSbTe phase-change material-based thin-film device according to the present invention;
FIG. 3 is a schematic structural diagram of an embodiment 4 of a high-transmission-speed GeSbTe phase-change material-based thin-film device according to the invention;
the designations in the drawings include: 100. a substrate layer, 200, a lower electrode layer, 300, a first GeSbTe material layer, 400, a molybdenum disulfide layer, 401 and a lower MoS2And (5) film layer. 402. Sandwich MoS2Film layer, 403, MoS2Film layer, 404 first upper MoS2Intimal layer, 405, first Sandwich MoS2Inner membrane layer, 406, first lower MoS2Intima layer, 407, second Sandwich MoS2The inner film layer, 500, the second GeSbTe material layer, 600, the graphene layer, 700, the upper electrode layer, 800 and the protective layer.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the following detailed description of the present invention is provided with reference to the accompanying drawings.
The invention discloses a high-transmission-speed GeSbTe phase-change-material-based thin film device which comprises a substrate layer, a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the upper electrode layer and the protective layer are arranged on the substrate layer,The graphene layer, the upper electrode layer and the protective layer are sequentially arranged and superposed on the substrate layer, the molybdenum disulfide layer is of a composite layered structure and comprises an upper MoS2Film layer and sandwich MoS2Film and lower MoS2Film layer, upper MoS2Film, lower MoS2The film layer is 2H phase MoS in a magnetron sputtering mode2Film, sandwich MoS2The film layer is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer.
Further, MoS2Film, lower MoS2The film layer is TiN-MoS2A Ti film layer or TiN-MoS2A TiN film layer.
Further, MoS2Film layer, sandwich MoS2 film layer, lower MoS2The thickness ratio of the film layer is 1:2: 1.
Further, after the first GeSbTe material layer is plated on the thin film device, high-temperature hot-pressing shaping is carried out on the thin film device, and then the graphene layer is plated on the thin film device
Further, sandwich MoS2The film layer is MoS obtained by ultrasonic dispersion and supercritical separation in a mode of coating and drying for multiple times2Solution coating under MoS2Coating MoS on the film layer after coating2And (5) film layer.
Further, at MoS2Film and sandwich MoS2A first sandwich MoS is arranged between the film layers2Inner film layer and first upper MoS2Intima layer, first Sandwich MoS2Structure of (2) and sandwich MoS2The film layer is the same, the first upper MoS2Inner film layer and upper MoS2Same film layer, upper MoS2Film layer, first sandwich MoS2Inner film layer, first upper MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
Further, under MoS2Film and sandwich MoS2A second sandwich MoS is arranged between the film layers2Intima layer and second lower MoS2Intima layer, second Sandwich MoS2Structure of (2) and sandwich MoS2The same film layer, MoS under the second2Inner film layer and lower MoS2Same film layer, lower MoS2Film layer, second sandwich MoS2Inner film layer, second lower MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
Example 1
As shown in fig. 1, the invention discloses a GeSbTe phase change material-based thin film device with high transmission speed, which comprises a substrate layer 100, a lower electrode layer, a first GeSbTe material layer 300, a molybdenum disulfide layer 400, a second GeSbTe material layer 500, a graphene layer 600, an upper electrode layer 700 and a protective layer 800, wherein the lower electrode layer, the first GeSbTe material layer 300, the molybdenum disulfide layer 400, the second GeSbTe material layer 500, the graphene layer 600, the upper electrode layer 700 and the protective layer 800 are sequentially arranged and superposed on the substrate layer 100, the molybdenum disulfide layer 400 is of a composite layered structure, and the molybdenum disulfide layer 400 comprises an upper MoS layer2Film layer 403, Sandwich MoS2 Film layer 402 and lower MoS2Film 401, upper MoS2Film 403, lower MoS2The film 401 is 2H phase MoS in the form of magnetron sputtering2Film, sandwich MoS2The film 402 is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer.
In this embodiment, the upper MoS2Film, lower MoS2The film layers are all TiN-MoS2A TiN film layer.
In this embodiment, the upper MoS2Film layer and sandwich MoS2Film, lower MoS2The thickness ratio of the film layer is 1:2: 1; after the first GeSbTe material layer 300 is plated on the thin film device, high-temperature hot-pressing shaping is carried out, and then the graphene layer 600 is plated on the thin film device; sandwich MoS2The film layer is MoS obtained by ultrasonic dispersion and supercritical separation in a mode of coating and drying for multiple times2Solution coating under MoS2Coating MoS on the film layer after coating2And (5) film layer.
In order to effectively evaluate the technical effect of the embodiment, the thin film device prepared by the method CN106374045A is used as a comparison example, in terms of the transmission speed, the embodiment 1 is improved by 73 to 78% compared with the comparison example, the product batch consistency is equivalent to the result, the crystalline resistance value is reduced by about 3% compared with the comparison example, the amorphous resistance value is reduced by about 3.5% compared with the comparison example, the service life is long, the storage cycle number is extended by 23%, and after the thin film device is stored for 5 days in the atmosphere with the relative humidity of 60% to 70%, the comparison example has the failure of being unable to read, but the embodiment can still read normally.
Example 2
As shown in fig. 1, the invention discloses a GeSbTe phase change material-based thin film device with high transmission speed, which comprises a substrate layer 100, a lower electrode layer, a first GeSbTe material layer 300, a molybdenum disulfide layer 400, a second GeSbTe material layer 500, a graphene layer 600, an upper electrode layer 700 and a protective layer 800, wherein the lower electrode layer, the first GeSbTe material layer 300, the molybdenum disulfide layer 400, the second GeSbTe material layer 500, the graphene layer 600, the upper electrode layer 700 and the protective layer 800 are sequentially arranged and superposed on the substrate layer 100, the molybdenum disulfide layer 400 is of a composite layered structure, and the molybdenum disulfide layer 400 comprises an upper MoS layer2Film layer 403, Sandwich MoS2 Film layer 402 and lower MoS2Film 401, upper MoS2Film 403, lower MoS2The film 401 is 2H phase MoS in the form of magnetron sputtering2Film, sandwich MoS2The film 402 is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer.
In this embodiment, the upper MoS2Film, lower MoS2The film layers are all TiN-MoS2A Ti film layer.
In this embodiment, the upper MoS2Film layer and sandwich MoS2Film, lower MoS2The thickness ratio of the film layer is 1:2: 1; after the first GeSbTe material layer 300 is plated on the thin film device, high-temperature hot-pressing shaping is carried out, and then the graphene layer 600 is plated on the thin film device; sandwich MoS2The film layer is MoS obtained by ultrasonic dispersion and supercritical separation in a mode of coating and drying for multiple times2Solution coating under MoS2Coating MoS on the film layer after coating2And (5) film layer.
In order to effectively evaluate the technical effect of the embodiment, the thin film device prepared by the CN106374045A method is used as a comparison example, in terms of the transmission speed, the embodiment 2 is improved by 72 to 78% compared with the comparison example, the product batch consistency is equivalent to the result, the crystalline resistance value is reduced by about 2.8% compared with the comparison example, the amorphous resistance value is reduced by about 3.6% compared with the comparison example, the service life is long, the storage cycle number is extended by 25%, and after the thin film device is stored for 5 days in the atmosphere with the relative humidity of 60% to 70%, the comparison example has a failure that the thin film device cannot be read, but the embodiment can still read normally.
Example 3
As shown in fig. 2, the invention discloses a GeSbTe phase change material-based thin film device with high transmission speed, which comprises a substrate layer 100, a lower electrode layer, a first GeSbTe material layer 300, a molybdenum disulfide layer 400, a second GeSbTe material layer 500, a graphene layer 600, an upper electrode layer 700 and a protective layer 800, wherein the lower electrode layer, the first GeSbTe material layer 300, the molybdenum disulfide layer 400, the second GeSbTe material layer 500, the graphene layer 600, the upper electrode layer 700 and the protective layer 800 are sequentially arranged and superposed on the substrate layer 100, the molybdenum disulfide layer 400 is of a composite layered structure, and the molybdenum disulfide layer 400 comprises an upper MoS layer2Film layer 403, Sandwich MoS2 Film layer 402 and lower MoS2Film 401, upper MoS2Film 403, lower MoS2The film 401 is 2H phase MoS in the form of magnetron sputtering2Film, sandwich MoS2The film 402 is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer.
In this embodiment, the upper MoS2The film layer is TiN-MoS2A Ti film layer; lower MoS2The film layer is TiN-MoS2A TiN film layer.
In this embodiment, the upper MoS2Film layer, sandwich MoS2 film layer, lower MoS2The thickness ratio of the film layer is 1:2: 1; after the first GeSbTe material layer 300 is plated on the thin film device, high-temperature hot-pressing shaping is carried out, and then the graphene layer 600 is plated on the thin film device; sandwich MoS2The film layer is MoS obtained by ultrasonic dispersion and supercritical separation in a mode of coating and drying for multiple times2Solution coating under MoS2Coating MoS on the film layer after coating2And (5) film layer.
As shown in FIG. 2, in the present embodiment, at the upper MoS2Film layer 403 and sandwiched MoS2A first sandwich MoS is arranged between the film layers 4022The intima layer 405 and the first upper MoS2Intima layer 404, first sandwiched MoS2Structure of (2) and sandwich MoS2The film layer is the same, the first upper MoS2Inner film layer and upper MoS2Same film layer, upper MoS2Film layer, first sandwich MoS2Inner film layer, first upper MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
In order to effectively evaluate the technical effect of the embodiment, the thin film device prepared by the CN106374045A method is used as a comparison example, in terms of the transmission speed, the embodiment 3 is improved by 78-82% compared with the comparison example, the product batch consistency is equivalent to the result, the crystalline resistance value is reduced by about 3.5% compared with the comparison example, the amorphous resistance value is reduced by about 3.8% compared with the comparison example, the service life is long, the storage cycle number is prolonged by 26%, and after the thin film device is stored for 5 days in the atmosphere with the relative humidity of 60% -70%, the comparison example has a failure that the thin film device cannot be read, but the embodiment can still be read normally.
Example 4
As shown in fig. 3, the invention discloses a thin film device with high transmission speed based on GeSbTe phase change material, which comprises a substrate layer 100, a lower electrode layer, a first GeSbTe material layer 300, a molybdenum disulfide layer 400, a second GeSbTe material layer 500, a graphene layer 600, an upper electrode layer 700 and a protective layer 800, wherein the lower electrode layer, the first GeSbTe material layer 300, the molybdenum disulfide layer 400, the second GeSbTe material layer 500, the graphene layer 600, the upper electrode layer 700 and the protective layer 800 are sequentially arranged and superposed on the substrate layer 100, the molybdenum disulfide layer 400 is of a composite layered structure, and the molybdenum disulfide layer 400 comprises an upper MoS layer2Film layer 403, Sandwich MoS2 Film layer 402 and lower MoS2Film 401, upper MoS2Film 403, lower MoS2The film 401 is 2H phase MoS in the form of magnetron sputtering2Film, sandwich MoS2The film 402 is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer.
In this embodiment, the upper MoS2The film layer is TiN-MoS2A Ti film layer; the lower MoS2 film layer is TiN-MoS2A TiN film layer.
In this embodiment, the upper MoS2Film layer, sandwich MoS2 film layer, lower MoS2The thickness ratio of the film layer is 1:2: 1; the thin film device is subjected to high temperature heat treatment after being plated with the first GeSbTe material layer 300Plating the graphene layer 600 after the press-shaping; sandwich MoS2The film layer is MoS obtained by ultrasonic dispersion and supercritical separation in a mode of coating and drying for multiple times2Solution coating under MoS2Coating MoS on the film layer after coating2And (5) film layer.
As shown in FIG. 3, in the present embodiment, at the upper MoS2Film layer 403 and sandwiched MoS2A first sandwich MoS is arranged between the film layers 4022The intima layer 405 and the first upper MoS2Intima layer 404, first sandwiched MoS2Structure of (2) and sandwich MoS2The film layer is the same, the first upper MoS2Inner film layer and upper MoS2Same film layer, upper MoS2Film layer, first sandwich MoS2Inner film layer, first upper MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
As shown in fig. 3, under MoS2Film 401 and sandwich MoS2A second sandwich MoS is arranged between the film layers 4022MoS under intima layer 4072 Intima layer 406, second Sandwich MoS2Structure of (2) and sandwich MoS2The same film layer, MoS under the second2Inner film layer and lower MoS2Same film layer, lower MoS2Film layer, second sandwich MoS2Inner film layer, second lower MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
In order to effectively evaluate the technical effect of the embodiment, the thin film device prepared by the CN106374045A method is used as a comparison example, in terms of the transmission speed, the embodiment 4 is improved by 78-85% compared with the comparison example, the product batch consistency is equivalent to the result, the crystalline resistance value is reduced by about 3.4% compared with the comparison example, the amorphous resistance value is reduced by about 3.9% compared with the comparison example, the service life is long, the storage cycle number is extended by 28%, and after the thin film device is stored for 5 days in the atmosphere with the relative humidity of 60% -70%, the comparison example has a failure that the thin film device cannot be read, but the embodiment can still be read normally.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can readily practice the invention as shown and described in the drawings and detailed description herein; however, those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiments as a basis for designing or modifying other structures for carrying out the same purposes of the present invention; meanwhile, any changes, modifications, and evolutions of the equivalent changes of the above embodiments according to the actual techniques of the present invention are still within the protection scope of the technical solution of the present invention.
Claims (7)
1. The utility model provides a high transmission speed is based on film devices of GeSbTe phase change material, includes substrate layer, bottom electrode layer, first GeSbTe material layer, molybdenum disulfide layer, second GeSbTe material layer, graphite alkene layer, goes up electrode layer and protective layer, bottom electrode layer, first GeSbTe material layer, molybdenum disulfide layer, second GeSbTe material layer, graphite alkene layer, last electrode layer, protective layer set gradually the stack be on the substrate layer its characterized in that:
the molybdenum disulfide layer is of a composite layered structure and comprises an upper MoS2Film layer and sandwich MoS2Film and lower MoS2Film layer of said upper MoS2Film, lower MoS2The film layer is 2H phase MoS in a magnetron sputtering mode2Film layer of the sandwich MoS2The film layer is 2H-1T co-phase MoS formed by coating after chemical liquid phase stripping2And (5) film layer.
2. An improved GeSbTe phase change material based thin film device as claimed in claim 1, wherein: the upper MoS2Film, lower MoS2The film layer is TiN-MoS2A Ti film layer or TiN-MoS2A TiN film layer.
3. An improved GeSbTe phase change material based thin film device as claimed in claim 2, wherein: the upper MoS2Film layer, sandwich MoS2 film layer, lower MoS2The thickness ratio of the film layer is 1:2: 1.
4. An improved GeSbTe phase change material based thin film device as claimed in claim 2, wherein: and after the first GeSbTe material layer is plated on the thin film device, high-temperature hot-pressing shaping is carried out, and then the graphene layer is plated on the thin film device.
5. An improved GeSbTe phase change material based thin film device as claimed in claim 2, wherein: the sandwich MoS2The film layer is MoS obtained by ultrasonic dispersion and supercritical separation in a mode of coating and drying for multiple times2Solution coating under MoS2Coating MoS on the film layer after coating2And (5) film layer.
6. An improved GeSbTe phase change material based thin film device as claimed in claim 2, wherein: at MoS2Film and sandwich MoS2A first sandwich MoS is arranged between the film layers2Inner film layer and first upper MoS2An inner membrane layer, the first sandwich MoS2Structure of (2) and sandwich MoS2The film layer is the same, the first upper MoS2Inner film layer and upper MoS2Same film layer, upper MoS2Film layer, first sandwich MoS2Inner film layer, first upper MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
7. An improved GeSbTe phase change material based thin film device as claimed in claim 2, wherein: under MoS2Film and sandwich MoS2A second sandwich MoS is arranged between the film layers2Intima layer and second lower MoS2An inner membrane layer, the second sandwiched MoS2Structure of (2) and sandwich MoS2The same film layer, MoS under the second2Inner film layer and lower MoS2Same film layer, lower MoS2Film layer, second sandwich MoS2Inner film layer, second lower MoS2Inner film layer and sandwich MoS2The film layers are sequentially arranged to form a staggered layered arrangement.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106145191A (en) * | 2016-06-28 | 2016-11-23 | 东华大学 | A kind of molybdenum sulfide multilevel-structure nano material and preparation method and application |
| CN106374045A (en) * | 2016-10-28 | 2017-02-01 | 广东石油化工学院 | Thin-film device based on GeSbTe phase-change material |
| US20190352190A1 (en) * | 2017-01-23 | 2019-11-21 | The University Of Manchester | 1t-phase transition metal dichalcogenide nanosheets |
-
2020
- 2020-04-27 CN CN202010342417.1A patent/CN111326653A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106145191A (en) * | 2016-06-28 | 2016-11-23 | 东华大学 | A kind of molybdenum sulfide multilevel-structure nano material and preparation method and application |
| CN106374045A (en) * | 2016-10-28 | 2017-02-01 | 广东石油化工学院 | Thin-film device based on GeSbTe phase-change material |
| US20190352190A1 (en) * | 2017-01-23 | 2019-11-21 | The University Of Manchester | 1t-phase transition metal dichalcogenide nanosheets |
Non-Patent Citations (2)
| Title |
|---|
| 张理勇;方粮;彭向阳;: "单层二硫化钼多相性质及相变的第一性原理研究" * |
| 荆阳,雒建斌,庞思勤: "Ti或TiN的添加对MoS_2基复合薄膜耐磨性能的影响" * |
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Application publication date: 20200623 |