CN111326408B - Semiconductor structure and forming method thereof - Google Patents
Semiconductor structure and forming method thereof Download PDFInfo
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- CN111326408B CN111326408B CN201811523009.5A CN201811523009A CN111326408B CN 111326408 B CN111326408 B CN 111326408B CN 201811523009 A CN201811523009 A CN 201811523009A CN 111326408 B CN111326408 B CN 111326408B
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- 238000000034 method Methods 0.000 title claims abstract description 86
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 108
- 239000000126 substance Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 27
- 238000005468 ion implantation Methods 0.000 claims abstract description 24
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 230000004048 modification Effects 0.000 claims description 24
- 238000012986 modification Methods 0.000 claims description 24
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 22
- -1 hydrogen ions Chemical class 0.000 claims description 17
- 230000004913 activation Effects 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000004381 surface treatment Methods 0.000 claims description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 4
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 3
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 3
- 150000002460 imidazoles Chemical class 0.000 claims description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 3
- 150000003222 pyridines Chemical class 0.000 claims description 3
- 150000003230 pyrimidines Chemical class 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000003472 neutralizing effect Effects 0.000 claims 1
- 150000007530 organic bases Chemical class 0.000 claims 1
- 238000010849 ion bombardment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
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- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
A semiconductor structure and a forming method thereof are provided, wherein the forming method comprises the following steps: providing a substrate; forming a patterned photoresist layer on the surface of the substrate; taking the patterned photoresist layer as a mask, carrying out an ion implantation process, and doping ions into the substrate; and after the ion implantation process, modifying the material of the photoresist layer by using a first treatment substance, wherein the first treatment substance is alkaline. The forming method can effectively reduce the shrinkage of the photoresist layer.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and more particularly, to a semiconductor structure and a method for forming the same.
Background
Low activation energy photoresist (low Ea resist), referred to as low temperature resist for short, is widely used in ion implantation processes because of its high Energy Latitude (EL) and good stability of post-exposure bake (PEB).
However, the conventional low activation energy photoresist has a low activation energy, and the critical dimension of the photoresist shrinks because the photoresist shrinks instantaneously due to the ion bombardment in the ion implantation process and continues to shrink slowly with time at room temperature.
Disclosure of Invention
The invention provides a semiconductor structure and a forming method thereof, which can effectively reduce the shrinkage of a photoresist layer.
To solve the above technical problem, an embodiment of the present invention provides a method for forming a semiconductor structure, including: providing a substrate; forming a patterned photoresist layer on the surface of the substrate; taking the patterned photoresist layer as a mask, carrying out an ion implantation process, and doping ions into the substrate; and after the ion implantation process, modifying the material of the photoresist layer by using a first treatment substance, wherein the first treatment substance is alkaline.
Optionally, the material of the photoresist layer is a low activation energy photoresist.
Optionally, the modification treatment process includes: dry processing, wet processing, or ionization processing.
Optionally, when the modification treatment is dry treatment, the dry treatment method includes: gasifying the first treatment substance to generate gas; and modifying the material of the photoresist layer by using gas.
Optionally, when the modification treatment is an ionization treatment, the ionization treatment method includes: plasma processing the first treatment object to generate plasma; and carrying out modification treatment on the photoresist layer by using the plasma.
Optionally, when the modification treatment is wet treatment, the wet treatment method includes: and treating the material of the photoresist layer by using the solution of the first treatment substance.
Optionally, the first treatment substance includes: inorganic weak base or organic weak base.
Optionally, the inorganic weak base substance comprises: potassium carbonate, cesium carbonate or sodium carbonate.
Optionally, the organic weak base substance includes: amine compounds, imidazole compounds, pyrimidine compounds or pyridine compounds.
Optionally, the amine compound comprises: hexamethyldisilazane.
Optionally, the low activation energy photoresist comprises the following components: a photoacid generator and an acid-sensitive group.
Optionally, the method for forming the patterned photoresist layer includes: forming a photoresist film on the surface of the substrate; exposing the photoresist film, and transferring the pattern in the mask plate to the photoresist film; and after the exposure, developing the photoresist film to form a patterned photoresist layer.
Optionally, the process for forming the photoresist film includes: and (4) spin coating.
Optionally, the process parameters of the ion implantation process include: the injection energy is 10 kilo-electron volts to 300 kilo-electron volts, and the injection dosage is 1e13 atomic number/square centimeter to 1e14 atomic number/square centimeter.
Optionally, the method further includes: and before the photoresist layer is formed, carrying out surface treatment on the substrate by using a second treatment object.
Optionally, the first treatment substance is the same as the second treatment substance.
Correspondingly, the invention also provides a semiconductor structure formed by any one of the methods.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the method for forming the semiconductor structure, after an ion implantation process, a first treatment substance is used for modifying the material of the photoresist layer, and the first treatment substance is alkaline. The first treatment substance can neutralize hydrogen ions generated by the bombardment of the ion implantation process on the photoresist layer, so that the hydrogen ions can be prevented from acting on low-activation-energy bonds in the material of the photoresist layer, the breakage of the low-activation-energy bonds is avoided, the separation of acid-sensitive groups caused by the breakage of the low-activation-energy bonds is avoided, and the shrinkage of the photoresist layer can be reduced.
Further, before the photoresist layer is formed, a second treatment substance is used for surface treatment of the substrate. The first treatment object adopted by the modification treatment is the same as the second treatment object adopted by the surface treatment, so that the modification treatment can be compatible with the existing process, and the modification treatment is easy to realize, therefore, the contraction of the photoresist layer is effectively reduced, and the process can be simplified.
Furthermore, the cost of the first treatment material hexamethyldisilazane used for modification treatment is low, so that the substrate is modified by the hexamethyldisilazane, the shrinkage of the photoresist layer is effectively reduced, and the preparation cost can be saved.
Drawings
FIGS. 1-2 are schematic structural diagrams of steps of a method of forming a semiconductor structure;
fig. 3 to 8 are schematic structural diagrams of steps of a method for forming a semiconductor structure according to an embodiment of the invention.
Detailed Description
As described in the background, the photoresist layer formed by the prior art is easily shrunk.
Fig. 1 to fig. 2 are schematic structural diagrams of steps of a method for forming a semiconductor structure.
Referring to fig. 1, a substrate 100 is provided, and a patterned photoresist layer 110 is formed on a surface of the substrate 100.
Referring to fig. 2, an ion implantation process is performed to dope ions into the substrate 100 by using the patterned photoresist 110 as a mask.
In the above method for forming the semiconductor structure, the photoresist layer 110 is made of a low-activation-energy photoresist, the low-activation-energy photoresist has a high energy tolerance (EL) and a good stability of post-exposure baking (PEB), and thus the low-activation photoresist is widely used as a mask in an ion implantation process to implant ions into the substrate 100 exposed by the photoresist layer 110.
However, since the low activation energy photoresist has a low activation energy, the ion bombardment of the ion implantation process acts on the photoacid generator in the low activation energy photoresist, resulting in ionization to generate hydrogen ions. The hydrogen ions can break a chemical bond with lower bond energy in the active energy photoresist, so that a group connected through the chemical bond is dissociated, the low active energy photoresist is slowly decomposed at room temperature, and the critical dimension of the patterned photoresist layer 110 is shrunk.
In order to solve the technical problem, the invention provides a method for forming a semiconductor structure, which comprises the following steps: providing a substrate; forming a patterned photoresist layer on the surface of the substrate; taking the patterned photoresist layer as a mask, carrying out an ion implantation process, and doping ions into the substrate; and after the ion implantation process, modifying the material of the photoresist layer by using a first treatment substance, wherein the first treatment substance is alkaline. The forming method can effectively reduce the shrinkage of the photoresist layer.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below.
Fig. 3 to 8 are schematic structural diagrams of steps of a method for forming a semiconductor structure according to an embodiment of the invention.
Referring to fig. 3, a substrate 200 is provided.
In this embodiment, the material of the substrate 200 is monocrystalline silicon.
The substrate may also be polysilicon or amorphous silicon. The substrate can also be made of semiconductor materials such as germanium, silicon germanium or gallium arsenide. The substrate can also be a semiconductor-on-insulator structure comprising an insulator and a semiconductor material layer on the insulator, wherein the semiconductor material layer comprises a semiconductor material such as silicon, germanium, silicon germanium, gallium arsenide or indium gallium arsenide.
Referring to fig. 4, a substrate 200 is surface-treated with a second treatment substance.
In this embodiment, the second treatment substance used for the surface treatment is hexamethyldisilazane.
The surface treatment of the substrate 200 by the second treatment substance is beneficial to better combining the surface of the substrate 200 with a photoresist layer formed on the surface of the substrate 200 subsequently, thereby being beneficial to improving the accuracy of the photoetching process.
In this embodiment, after the surface treatment, a patterned photoresist layer is formed on the surface of the substrate, please refer to fig. 5 to 6, and a process for forming the patterned photoresist layer is described.
Referring to fig. 5, a photoresist film 210 is formed on the surface of the substrate 200.
The photoresist film 210 is made of a low activation energy photoresist, and correspondingly, the subsequently formed photoresist layer is made of a low activation energy photoresist.
The low activation energy photoresist comprises the following components: a photoacid generator and an acid-sensitive group.
The forming process of the photoresist film 210 comprises the following steps: and (4) spin coating.
Referring to fig. 6, after the photoresist film 210 is formed, the photoresist film 210 (shown in fig. 5) is exposed, and a pattern in a mask is transferred to the photoresist film 210; after the exposure, the photoresist film 210 is developed to form a patterned photoresist layer 220.
The patterned photoresist layer 220 serves as a mask for a subsequent ion implantation process, thereby doping ions in regions of the substrate 200 not covered by the patterned photoresist layer 220.
Referring to fig. 7, an ion implantation process is performed to dope ions into the substrate 200 using the patterned photoresist layer 220 as a mask.
Through the ion implantation process, ions are doped in the substrate 200, thereby changing the conductivity of the substrate 200 or forming a PN junction, etc.
In this embodiment, the process parameters of the ion implantation process include: the injection energy is 10 kilo-electron volts to 300 kilo-electron volts, and the injection dosage is 1e13 atomic number/square centimeter to 1e14 atomic number/square centimeter.
The significance of selecting the implantation energy range is: if the implantation energy is less than 10 kev, the implanted ions cannot enter the substrate 200 sufficiently, so that the performance of the formed semiconductor structure is poor; if the implantation energy is greater than 300 kev, the higher energy ions may cause some damage to the substrate 200 and the patterned photoresist layer 220, which may result in poor performance of the formed semiconductor structure.
Referring to fig. 8, after the ion implantation process, a modification process is performed on the material of the photoresist layer 220 with a first treatment substance, which is alkaline.
The first treatment substance includes: inorganic weak base substances or organic weak base substances.
The inorganic weak base substance comprises: potassium carbonate, cesium carbonate or sodium carbonate.
The organic weak base substance comprises: amine compounds, imidazole compounds, pyrimidine compounds or pyridine compounds.
The amine compound comprises: hexamethyldisilazane.
In this embodiment, the first treatment substance used in the modification treatment is the same as the second treatment substance used in the surface treatment, that is, the photoresist layer 220 is modified with hexamethyldisilazane.
Since the substrate 200 is subjected to the ion implantation process, the photoresist layer 220 is inevitably damaged by the ion bombardment with large energy, and the photoacid generator in the material forming the photoresist layer 220 is easily decomposed to generate hydrogen ions. The first treatment substance can effectively neutralize the hydrogen ions, so that the hydrogen ions can be prevented from acting on low activation energy bonds existing in the material of the photoresist layer 220, the low activation energy bonds are prevented from being broken, the group separation caused by the breakage of the low activation energy bonds is further prevented, and the shrinkage of the photoresist layer 220 can be reduced.
The modification treatment process comprises the following steps: dry processing, wet processing or ionization processing.
When the modification treatment is dry treatment, the dry treatment method comprises the following steps: gasifying the treated material to generate gas; the gas is used to modify the material of the photoresist layer 220.
When the modification treatment is an ionization treatment, the ionization treatment method comprises the following steps: plasma processing the first treatment object to generate plasma; the plasma is applied to modify the photoresist layer 220.
When the modification treatment is wet treatment, the wet treatment method comprises the following steps: the solution of the first treatment substance is used to treat the material of the photoresist layer 220.
In the present embodiment, the photoresist layer 220 is dry-processed using hexamethyldisilazane. The specific process parameters comprise: the treatment temperature is 200-300 ℃, and the treatment time is 10-60 seconds.
The significance of selecting the temperature range is: if the treatment temperature is lower than 200 ℃, hexamethyldisilazane cannot be sufficiently gasified, and cannot be sufficiently contacted with the photoresist layer 220 for reaction, so that hydrogen ions generated by ion bombardment of a photoacid generator in the photoresist material cannot be effectively neutralized, and the photoresist layer 220 still seriously shrinks; if the processing temperature is 300 ℃, the photoresist material may be carbonized by the higher temperature processing, which may cause damage, and the performance of the photoresist layer 220 may be affected, so that the performance of the formed semiconductor structure may be poor.
The significance of selecting the time range is: if the treatment time is less than 10 seconds, the photoresist layer 220 is treated in a shorter time, and the first treatment substance cannot sufficiently neutralize hydrogen ions generated by ion bombardment of the photoacid generator in the photoresist material, so that the photoresist layer 220 still shrinks seriously; if the treatment time is more than 60 seconds, the first treatment material sufficiently neutralizes the generated hydrogen ions and then increases the treatment time, which increases the cost and the process time.
Before the photoresist layer 220 is formed, a second treatment is used to perform a surface treatment on the substrate 200. The first treatment substance adopted by the modification treatment is the same as the second treatment substance adopted by the surface treatment, so that the modification treatment can be compatible with the existing process, and the modification treatment is easy to realize, therefore, the shrinkage of the photoresist layer is effectively reduced, and the process can be simplified.
The cost of the first treatment substance hexamethyldisilazane used for modification treatment is low, so that the hexamethyldisilazane is used for modifying the substrate, the shrinkage of the photoresist layer is effectively reduced, and the preparation cost can be saved.
Correspondingly, the embodiment of the invention also provides a semiconductor structure formed by adopting the method.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (15)
1. A method of forming a semiconductor structure, comprising:
providing a substrate;
forming a patterned photoresist layer on the surface of the substrate, wherein the photoresist layer is made of low-activation-energy photoresist;
taking the patterned photoresist layer as a mask, carrying out an ion implantation process, and doping ions into the substrate;
after the ion implantation process, modifying the material of the photoresist layer with a first treatment substance, wherein the first treatment substance is suitable for neutralizing hydrogen ions generated by bombardment of the photoresist layer by the ion implantation process, and the first treatment substance is alkaline and comprises: inorganic weak base substances or organic weak base substances.
2. The method of forming a semiconductor structure of claim 1, wherein the modifying comprises: dry processing, wet processing, or ionization processing.
3. The method for forming a semiconductor structure according to claim 2, wherein when the modification treatment is a dry treatment, the dry treatment method comprises: gasifying the first treatment substance to generate gas; and modifying the material of the photoresist layer by using gas.
4. The method of forming a semiconductor structure according to claim 2, wherein when the modification treatment is an ionization treatment, the ionization treatment comprises: plasma processing the first treatment object to generate plasma; and carrying out modification treatment on the photoresist layer by using the plasma.
5. The method of forming a semiconductor structure of claim 2, wherein when the modification process is a wet process, the wet process comprises: and treating the material of the photoresist layer by using the solution of the first treatment substance.
6. The method of forming a semiconductor structure of claim 1, wherein the inorganic weak base species comprises: potassium carbonate, cesium carbonate or sodium carbonate.
7. The method of forming a semiconductor structure of claim 1, wherein the weak organic base species comprises: amine compounds, imidazole compounds, pyrimidine compounds or pyridine compounds.
8. The method of forming a semiconductor structure of claim 7, wherein the amine compound comprises: hexamethyldisilazane.
9. The method of forming a semiconductor structure of claim 1, wherein the low activation energy photoresist comprises: a photoacid generator and an acid-sensitive group.
10. The method of forming a semiconductor structure of claim 1, wherein the patterned photoresist layer comprises: forming a photoresist film on the surface of the substrate; exposing the photoresist film, and transferring the pattern in the mask plate to the photoresist film; and after the exposure, developing the photoresist film to form a patterned photoresist layer.
11. The method of claim 10, wherein the photoresist film forming process comprises: and (4) spin coating.
12. The method of claim 1, wherein the process parameters of the ion implantation process comprise: the injection energy is 10-300 keV, and the injection dosage is 1e 13-1 e 14.
13. The method of forming a semiconductor structure of claim 1, further comprising: and before the photoresist layer is formed, carrying out surface treatment on the substrate by using a second treatment object.
14. The method of forming a semiconductor structure of claim 13, wherein the first and second handle are the same.
15. A semiconductor structure formed by the method of any of claims 1 to 14.
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| CN201811523009.5A CN111326408B (en) | 2018-12-13 | 2018-12-13 | Semiconductor structure and forming method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4841342A (en) * | 1986-03-13 | 1989-06-20 | Ushio Denki | Apparatus for treating photoresists |
| CN101452225A (en) * | 2007-12-07 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Developing method for photoresist mask pattern |
| CN106610569A (en) * | 2017-01-04 | 2017-05-03 | 上海华虹宏力半导体制造有限公司 | Method for preventing peeling of photoresist |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080023814A (en) * | 2006-09-12 | 2008-03-17 | 주식회사 하이닉스반도체 | Method for forming fine patterns of semiconductor devices |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4841342A (en) * | 1986-03-13 | 1989-06-20 | Ushio Denki | Apparatus for treating photoresists |
| CN101452225A (en) * | 2007-12-07 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Developing method for photoresist mask pattern |
| CN106610569A (en) * | 2017-01-04 | 2017-05-03 | 上海华虹宏力半导体制造有限公司 | Method for preventing peeling of photoresist |
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