CN111315129A - Flexible resistor-capacitor composite copper film structure and circuit board structure using same - Google Patents
Flexible resistor-capacitor composite copper film structure and circuit board structure using same Download PDFInfo
- Publication number
- CN111315129A CN111315129A CN201911327876.6A CN201911327876A CN111315129A CN 111315129 A CN111315129 A CN 111315129A CN 201911327876 A CN201911327876 A CN 201911327876A CN 111315129 A CN111315129 A CN 111315129A
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- Prior art keywords
- epoxy resin
- layer
- composite copper
- dielectric
- mold structure
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 210
- 239000010949 copper Substances 0.000 title claims abstract description 189
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 180
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- 239000003990 capacitor Substances 0.000 title claims abstract description 123
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- 239000002184 metal Substances 0.000 claims abstract description 92
- -1 nickel metal compound Chemical class 0.000 claims description 84
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 81
- 239000003989 dielectric material Substances 0.000 claims description 71
- 239000003822 epoxy resin Substances 0.000 claims description 69
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- 239000000463 material Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 55
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- 229910052759 nickel Inorganic materials 0.000 claims description 48
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 33
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 27
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 16
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 12
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- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 12
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- AAOADXIHXYIOMT-UHFFFAOYSA-N 1,1'-biphenyl;phosphoric acid Chemical compound OP(O)(O)=O.C1=CC=CC=C1C1=CC=CC=C1 AAOADXIHXYIOMT-UHFFFAOYSA-N 0.000 claims description 6
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 6
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- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 6
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- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 6
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 6
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 claims description 6
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims description 6
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- 239000004114 Ammonium polyphosphate Substances 0.000 claims description 6
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- GBYIPEFQQCCCJP-UHFFFAOYSA-N Cl.C(C)C1=C(C=CC=C1)P(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound Cl.C(C)C1=C(C=CC=C1)P(C1=CC=CC=C1)C1=CC=CC=C1 GBYIPEFQQCCCJP-UHFFFAOYSA-N 0.000 claims description 6
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- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 6
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- 229920000388 Polyphosphate Polymers 0.000 claims description 6
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 claims description 6
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- QPPQHRDVPBTVEV-UHFFFAOYSA-N isopropyl dihydrogen phosphate Chemical compound CC(C)OP(O)(O)=O QPPQHRDVPBTVEV-UHFFFAOYSA-N 0.000 claims description 6
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- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 6
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention mainly discloses a flexible resistance-capacitance composite copper film structure, which comprises: a first conductive metal layer, a first resistance layer, a first dielectric layer, a flexible support layer, a second dielectric layer, a second resistance layer, and a second conductive metal layer. Particularly, after the soft resistance-capacitance composite copper film structure is subjected to developing and etching treatment twice, a first electronic circuit comprising at least one thin film resistance element, at least one thin film inductance element and at least one thin film capacitance element can be manufactured on the top surface of the soft resistance-capacitance composite copper film structure; meanwhile, a second electronic circuit comprising at least one thin film resistor element, at least one thin film inductor element and at least one thin film capacitor element is manufactured on the bottom surface of the flexible resistor-capacitor composite copper film structure. Of course, the first electronic circuit can be coupled to the second electronic circuit by forming a via hole on the composite copper film structure of the flexible resistor capacitor.
Description
Technical Field
The invention relates to the technical field of a composite copper mold with embedded passive elements, in particular to a flexible resistance-capacitance composite copper film structure and a circuit board structure using the same.
Background
Engineers with electronic, electromechanical or computer backgrounds should purchase Printed Circuit Boards (PCBs) in a font form, and develop, etch, and strip (DES) the PCB based on a pre-designed circuit pattern (circuit layout), so as to form a patterned copper foil circuit on the surface of the PCB, thereby forming electronic circuits. After the fabrication of the electronic circuit is completed, the electronic circuit is then configured with predetermined chips and passive components, such as: amplifier, processor, resistor, capacitor, inductor, etc.
On the other hand, with the development of smart technology, lightness and thinness have become the basic specifications of portable electronic products. It is expected that as the size of portable electronic products becomes thinner and lighter, the space for placing the electronic chip and the passive components inside the portable electronic products is also compressed. Therefore, it is the biggest problem for manufacturers and assembly plants of electronic devices to arrange sufficient electronic components and passive components in the limited internal space of the portable electronic products.
Accordingly, a corresponding trend in the industry is to continuously reduce the size of passive devices. At present, passive components with sizes of 0805(80 × 50mil2) and 0603(60 × 30mil2) are mainly used for manufacturing motherboards and notebook computers, and those with sizes of 0402(40 × 20mil2) and 0201(20 × 10mil2) are mostly applied to smart phones and tablet computers. It is inferred that the continuous miniaturization of the size of the passive components is subject to the bottleneck of technology or process, so the technology of "Embedded passive components" has been paid attention again in recent years. In particular, 3M Innovative Properties Company, Inc. proposes a Passive electrical structure (Passive electrical apparatus) disclosed in U.S. patent publication No. US2006/0286696A 1.
Fig. 1 is a schematic perspective view showing a known passive electrical structure. As shown in fig. 1, a known passive electrical structure PE' includes: a first rolled copper layer 11 ', a resistive layer 12', an insulating layer ', and a second rolled copper layer 14'; wherein the resistive layer 12 'is a nickel-phosphorus compound (Ni-P compound), and the insulating layer 13' is a polymer having a thickness ranging from 6 μm to 20 μm, such as: polyimide (PI). Wherein, the first rolled copper layer 11 ' and the resistance layer 12 ' form a copper foil resistor 1 '. It is worth mentioning that the polyimide (insulating layer 13') may be further doped with dielectric particles. Moreover, the process of the passive electrical structure PE' includes the following steps:
(1) preparing a first rolled copper layer 11 ' with proper thickness, and forming a layer of nickel-phosphorus compound (Ni-P alloy) with the thickness less than 1 mu m on the surface of the first rolled copper layer by utilizing an electroplating technology to be used as a resistance layer 12 ', thereby finishing the manufacture of a copper foil resistor 1 ';
(2) preparing a second rolled copper layer 14 ' with proper thickness, and forming an insulating layer 13 ' (PI) with the thickness of 6-20 mu m on the surface of the second rolled copper layer to finish the manufacture of a copper foil insulator 1a ';
(3) the passive electrical structure PE ' is obtained by bonding the copper foil resistor 1 ' and the copper foil partial element 1a ' by means of the mutual adhesion of the resistor layer 12 ' and the insulating layer 13 '.
In general, the thickness of the second rolled copper layer 14 ' and the first rolled copper layer 11 ' is 36 μm, that is to say the overall thickness of the passive electrical structure PE ' falls between 79 μm and 93 μm. However, it should be noted that, since the nickel-phosphorus compound is formed on the rough surface (Mattside) of the first rolled copper layer 11' through the electroplating process, the electroplating process generates a large amount of high-phosphorus electroplating solution which causes a problem of waste water discharge and disposal. On the other hand, the diameter of the circular shaft is measured by a bending tester
During the bending test of the passive electrical structure PE ', it was found that peeling between the first rolled copper layer 11' and the resistive layer 12 'began to occur after the passive electrical structure PE' was bent more than 40 times. This phenomenon is attributed to the rough surface of the copper layer as the base material for electroplating, so that the resistive layer 12 'grows following the nucleation of the rough surface with extremely high roughness, resulting in poor continuity of the plating layer of the resistive layer 12' and incompact porosity; such microcosmic effects not only the mechanical properties but also the resistance of the resistive layer cannot be reduced to its limit, causing the bottleneck of device design. Therefore, it is not only easy to useThe bondability between the first rolled copper layer 11 'and the resistive layer 12' made of a nickel-phosphorus compound is still to be improved.
In summary, if the resistive element required for the electronic circuit is fabricated on the passive electrical structure PE ' including the copper foil resistor 1 ', the passive electrical structure PE ' must be etched at least three times. Because of the manufacturing requirement, in the first step, the copper foil of the area without the circuit and the underground resistance layer 12' (nickel-phosphorus compound) are respectively removed by using etching solution; and in the second step, the copper foil in the preset resistance area is removed by using an etching solution. Due to the poor corrosion resistance of the nickel-phosphorus compound, at least three etching steps are required to form a field in order to avoid poor reliability of the resistor element product and meet the requirement of line size precision of a customer. The higher the number of operations, the more problems of quality and yield. Moreover, because the density and continuity of the plating layer of the copper foil resistor 1 'are not perfect, after an electronic circuit is manufactured on the passive electrical structure PE' by using a developing and etching technology, the line width/line distance of the electronic circuit is usually greater than 30 micrometers/micrometer.
Also, Oak-Mitsui Inc. has proposed a multilayer structure with a resistor and a capacitor (Multilayered construction) disclosed in U.S. Pat. No. US7,192,654B2. Fig. 2 is a schematic perspective view of a known multilayer structure having a resistor and a capacitor. As shown in fig. 2, the conventional multilayer structure MS' having a resistor and a capacitor includes: a first rolled copper layer 21 ', a resistive layer 22', a first dielectric layer 23 ', an insulating layer 24', a second dielectric layer 25 ', and a second rolled copper layer 26'; the insulation layer 24 'is a polymer with a thickness ranging from 6 μm to 20 μm, such as Polyimide (PI), and the first rolled copper layer 21' and the resistance layer 22 'form a copper foil resistor 2'. Moreover, the process of the multilayer structure MS' with the resistor and the capacitor comprises the following steps:
(1) preparing a first rolled copper layer 21 ' with proper thickness, and forming a layer of nickel-phosphorus compound with the thickness less than 1 mu m on the surface of the first rolled copper layer by utilizing an electroplating technology to be used as a resistance layer 22 ', thereby finishing the manufacture of a copper foil resistor 2 ';
(2) preparing an insulating layer (PI)24 ', a first dielectric layer 23 ' and a second dielectric layer 25 ' with proper thickness, and respectively attaching the first dielectric layer 23 ' and the second dielectric layer 25 ' to one surface and the other surface of the insulating layer 24 ' to obtain a dielectric insulating part 2a ';
(3) preparing a second rolled copper layer 26 'with a proper thickness, and sequentially pressing the second rolled copper layer 26', the dielectric insulator 2a 'and the copper foil resistor 2', wherein the resistor layer 22 'of the copper foil resistor 2' is attached to the first dielectric layer 23 'of the dielectric insulator 2 a'.
Generally, the thickness of the second rolled copper layer 26 ' and the first rolled copper layer 21 ' is 36 μm, the thickness of the first dielectric layer 23 ' and the second dielectric layer 25 ' is 8 μm, and the thickness of the insulating layer 24 ' is between 6 μm and 20 μm. That is, the overall thickness of the multilayer structure with resistors and capacitors MS' falls between 94 μm and 108 μm.
Also, like the passive electrical structure PE ' disclosed in U.S. patent publication No. US2006/0286696a1, since the resistance layer 22 ' is formed on the matte surface (Matt side) of the first rolled copper layer 21 ' by an electroplating process using a nickel-phosphorus compound, a large amount of high-phosphorus plating solution generated by the electroplating process may cause a problem of waste water discharge and treatment. On the other hand, in the process of completing the bending test of the multilayer structure MS 'having the resistor and the capacitor with the circular shaft diameter of 4mm by using the bending tester, it was found that the peeling phenomenon between the first rolled copper layer 21' and the resistive layer 22 'started to occur after the multilayer structure MS' having the resistor and the capacitor was bent more than 40 times. The phenomenon is attributed to that the electroplated base material is the rough surface of the copper layer, so that the resistance layer can grow by nucleation along the rough surface with extremely high roughness, and the coating of the resistance layer has poor continuity and is porous and not compact; such microcosmic effects not only the mechanical properties but also the resistance of the resistive layer cannot be reduced to its limit, causing the bottleneck of device design.
As can be seen from the above description, the conventional multilayer structure with resistors, inductors and capacitors has many disadvantages; and whole thickness is thick partially, mostly uses the thick film design to give first place to, if: copper foil conducting layer with thickness more than 12 microns, dielectric layer with thickness more than 10 microns, glass fiber reinforced epoxy resin with thickness more than 100 microns and green paint glass fiber reinforced epoxy resin hard board, so that the board cannot be effectively thinned. Accordingly, the inventors of the present invention have made extensive studies and creation, and finally, have developed a flexible copper film structure for rc circuits and a circuit board structure using the same.
Disclosure of Invention
In view of the above problems in the prior art, an object of the present invention is to provide a flexible resistor-capacitor composite copper film structure, which includes: a first conductive metal layer, a first resistance layer, a first dielectric layer, a flexible support layer, a second dielectric layer, a second resistance layer and a second conductive metal layer. Particularly, after the soft resistance-capacitance composite copper film structure is subjected to developing and etching treatment twice, a first electronic circuit comprising at least one thin film resistance element, at least one thin film inductance element and at least one thin film capacitance element can be manufactured on the top surface of the soft resistance-capacitance composite copper film structure; and simultaneously, a second electronic circuit comprising at least one thin film resistor element, at least one thin film inductor element and at least one thin film capacitor element is manufactured on the bottom surface of the flexible resistor-capacitor composite copper film structure. Of course, the first electronic circuit can be coupled to the second electronic circuit by forming a via hole on the composite copper film structure of the flexible resistor capacitor.
In the flexible resistor-capacitor composite copper film structure, the first dielectric layer and the second dielectric layer are made of specially designed dielectric materials, so that the dielectric constant of the flexible resistor-capacitor composite copper film structure is between 4 and 68, and the dielectric loss of the flexible resistor-capacitor composite copper film structure is less than 0.02. Furthermore, besides being applied to a Flexible Printed Circuit (FPC), the flexible resistor-capacitor composite copper film structure of the invention can also form a soft-hard composite board with at least one circuit board.
In order to achieve the above object, the present invention provides a first embodiment of the flexible resistor-capacitor composite copper film structure, which includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first dielectric layer having one surface bonded to the other surface of the first resistive layer;
a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;
a bonding layer having one surface bonded to the other surface of the flexible support layer; and
a second conductive metal layer formed on the other surface of the junction layer.
In order to achieve the above object, the present invention provides a second embodiment of the flexible resistor-capacitor composite copper film structure, which includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first dielectric layer having one surface bonded to the other surface of the first resistive layer;
a second resistance layer having one surface bonded to the other surface of the first dielectric layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy; and
a second conductive metal layer formed on the other surface of the second resistance layer.
In order to achieve the above object, the present invention provides a third embodiment of the flexible resistor-capacitor composite copper film structure, which includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first dielectric layer having one surface bonded to the other surface of the first resistive layer;
a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;
a second dielectric layer having one surface bonded to the other surface of the flexible support layer
A second resistance layer having one surface bonded to the other surface of the second dielectric layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy; and
a second conductive metal layer formed on the other surface of the second resistance layer.
In order to achieve the above object, the present invention provides a fourth embodiment of the flexible resistor-capacitor composite copper film structure, which includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first flexible supporting layer, one surface of which is combined with the other surface of the first resistance layer;
a first dielectric layer, one surface of which is combined with the other surface of the first flexible supporting layer;
a second flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;
a second resistance layer, one surface of which is bonded to the other surface of the second flexible supporting layer and which is made of nickel, chromium, tungsten, nickel metal compound, chromium metal compound, tungsten metal compound, nickel-based alloy, chromium-based alloy, or tungsten-based alloy; and
a second conductive metal layer formed on the other surface of the second resistance layer.
In any embodiment of the above-described composite copper film structure for flexible resistor capacitor of the present invention, the first dielectric layer and the second dielectric layer include:
a first dielectric material having a first dielectric constant and a first loss factor;
a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and
and a polymer adhesive material, wherein after the first dielectric material and the second dielectric material are bonded by the polymer adhesive material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material becomes the first dielectric layer and/or the second dielectric layer after an ingot pressing and sintering process.
In any embodiment of the above-mentioned flexible resistor-capacitor composite copper film structure of the present invention, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material may be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped2O3) Barium titanate doped with magnesium oxide (MgO), or barium titanate doped with calcium oxide (CaO).
In any embodiment of the above-mentioned composite copper film structure for flexible resistor capacitor of the invention, after undergoing a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material may be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).
In any embodiment of the above-mentioned composite copper film structure for flexible resistor capacitor of the present invention, the dielectric constant of the first dielectric layer and/or the second dielectric layer is greater than 8, and the loss factor thereof is less than 0.02.
In any embodiment of the above-mentioned flexible resistor-capacitor composite copper film structure of the present invention, the polymer adhesive material has a semi-curing property, and is any one of the following: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.
In any embodiment of the above-mentioned flexible rc composite cu film structure of the present invention, the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.
In any embodiment of the above composite copper film structure for flexible resistor capacitor of the invention, the phosphorous resin may be any one of the following: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.
In any embodiment of the above-mentioned composite copper film structure for flexible resistor capacitor of the present invention, the first dielectric layer and the second dielectric layer further comprise a hardening material, and the hardening material may be any one of the following materials: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.
In any embodiment of the above-mentioned flexible resistor-capacitor composite copper film structure of the present invention, the crosslinking agent is an amine adduct, and the amine adduct may be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.
In any embodiment of the above composite copper film structure for flexible resistor capacitor of the invention, the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.
In any embodiment of the above-mentioned flexible resistor-capacitor composite copper film structure of the present invention, the flame retardant may be any one of the following: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.
In any embodiment of the above composite copper film structure for flexible resistor capacitor of the invention, the surfactant may be any one of the following: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.
In any embodiment of the above-mentioned flexible resistor-capacitor composite copper film structure of the present invention, the toughening agent may be any one of the following: rubber resin, polybutadiene, or core-shell polymers.
In any embodiment of the above composite copper film structure for flexible resistor capacitor of the invention, the solvent may be any one of the following: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.
In any embodiment of the above-mentioned flexible rc composite copper film structure of the present invention, the leveling agent may be a copolymer containing pigment affinity group adsorbed on silicon dioxide, produced by germany BYK, such as: BYK-3950P, BYK-3951P, BYK-3955P and Disperbyk-2200.
In any embodiment of the above-mentioned flexible resistor-capacitor composite copper film structure of the present invention, the defoaming agent may be an isoparaffin-paraffin naphthenic mixture produced by BYK in germany, such as: BYK-1790, BYK-1794 and BYK-A530.
In any embodiment of the above composite copper film structure for flexible resistor capacitor of the present invention, the anti-settling agent and the liquid anti-shaking property control agent may be a modified urea solution produced by germany BYK, such as: BYK-7410 ET.
In any of the above embodiments of the flexible resistor-capacitor composite copper film structure of the present invention, the wetting dispersant may be hydroxyl functional carboxylate, linear polymer copolymer, polyester with a highly structured structure and acrylic copolymer produced by BYK in germany, such as: disperbyk-107, Disperbyk-111, Disperbyk-118, Disperbyk-2013 and Disperbyk-9010.
In any embodiment of the above composite copper film structure for flexible resistor capacitor of the present invention, the substrate wetting agent may be fluoropolyether-modified dimethylsiloxane and polyether-modified polydimethylsiloxane produced by BYK, such as: BYK-3455 and BYK-333.
Drawings
Fig. 1 is a schematic perspective view of a known passive electrical structure;
FIG. 2 is a schematic perspective view of a known multilayer structure having a resistor and a capacitor;
FIG. 3A is a schematic perspective view of a first embodiment of a soft RC composite copper mold structure according to the present invention;
FIG. 3B is a schematic perspective view of a second embodiment of a soft RC composite copper mold structure according to the present invention;
FIG. 3C is a schematic perspective view of a third embodiment of a soft RC composite copper mold structure according to the present invention;
FIG. 3D is a schematic perspective view of a fourth embodiment of a soft RC composite copper mold structure according to the present invention;
FIG. 4 is a first schematic fabrication flow chart of a soft resistor-capacitor composite copper mold structure according to the present invention;
FIG. 5 is a second schematic fabrication flow chart of a flexible resistor-capacitor composite copper mold structure according to the present invention;
FIG. 6 is a third schematic manufacturing flow chart of a flexible resistor-capacitor composite copper mold structure according to the present invention;
FIGS. 7A-7D are exploded views of a development etching process including the soft RC composite copper mold structure of the present invention;
FIG. 8 is an image of Electron back-scattered diffraction (EBSD) of a sample of the copper foil resistor disclosed in U.S. patent publication No. US2006/0286696A 1;
FIG. 9 is an EBSD image of a sample of the copper foil resistor of a soft RC composite copper film structure according to the present invention;
fig. 10 is a schematic diagram illustrating the flow of performing the bending test.
Reference numerals:
< Prior Art marking >
PE' passive electrical structure
11' first rolled copper layer
12' resistive layer
13' insulating layer
14' second rolled copper layer
1' copper foil resistor
1 a' copper foil insulation
MS' multilayer structure with resistor and capacitor
21' first rolled copper layer
22' resistive layer
23' first dielectric layer
24' insulating layer
25' second dielectric layer
26' second rolled copper layer
2' copper foil resistor
2 a' dielectric insulator
< marker of the present invention >
PSD flexible resistance-capacitance composite copper film structure
11 first conductive metal layer
12 first resistance layer
Ie1 first dielectric layer
Ie2 second dielectric layer
FS flexible support layer
FS1 first flexible support layer
FS2 second flexible support layer
Ad adhesion layer
21 second conductive metal layer
22 second resistive layer
CR1 first resistance copper film unit
CR2 second resistance copper film unit
CI dielectric layer unit
ST1 first overlapping unit
ST2 second overlapping unit
PR1 first photoresist
pPR1 patterning first photoresist
PR2 second photoresist
p11 patterning a first conductive metal layer
p21 patterning a second conductive metal layer
W11 first etching window
W12 second etching window
W21 third etching window
W22 fourth etching window
R1 first sheet resistance
R2 second sheet resistance
L1 first film inductor
L2 second thin film inductor
UM upper metal plate
Metal plate under LM
TH1 first through hole
TH2 second through hole
CP1 first contact
Second contact of CP2
Detailed Description
In order to more clearly describe the flexible resistance capacitance composite copper film structure and the circuit board structure using the same of the present invention, preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
FIG. 3A is a schematic perspective view of a first embodiment of a soft RC composite copper mold structure according to the present invention; as shown in fig. 3A, the PSD with the flexible resistor-capacitor composite copper film structure of the present invention includes: a first conductive metal layer 11, a first resistance layer 12, a first dielectric layer Ie1, a flexible supporting layer FS, an adhesion layer Ad, and a second conductive metal layer 21. The thickness of the first conductive metal layer 11 and the second conductive metal layer 21 is between 0.4 micrometers and 50 micrometers, and the process material may be silver (Ag), copper (Cu), gold (Au), aluminum (Al), silver composite, copper composite, gold composite, aluminum composite, a composite of any two of the above, or a composite of any two or more of the above.
As shown in fig. 3A, a surface of the first resistance layer 12 is bonded to a surface of the first conductive metal layer 11, and the thickness thereof is less than 2 μm. The material of the first conductive metal layer 11 is copper, and the first resistance layer 12 is formed on the first conductive metal layer 11 by a sputtering process. Of course, in order to shorten the manufacturing time of the first resistance layer 12, the first resistance layer 12 can be manufactured by partial sputtering and partial electroplating. However, it should be emphasized that the sputtered first resistive layer 12 has better plating density and continuity. In the present invention, the process material of the first resistance layer 12 may be nickel, chromium, tungsten, nickel metal compound, chromium metal compound, tungsten metal compound, nickel-based alloy, chromium-based alloy, or tungsten-based alloy. Exemplary materials for the first resistive layer 12 are summarized in table (1) below.
Watch (1)
Wherein x, y and z are atomic number percentages, and the total of the x, the y and the z is 1. And M is a metal, such as copper (Cu), molybdenum (Mo), vanadium (V), tungsten (W), iron (Fe), aluminum (Al), or titanium (Ti). On the other hand, N is a nonmetal such as boron (B), carbon (C), nitrogen (N), oxygen (O), or silicon (Si).
More specifically, one surface of the first dielectric layer Ie1 is bonded to the other surface of the first resistive layer 12, and one surface of the flexible support layer FS is bonded to the other surface of the first dielectric layer Ie 1. According to the design of the present invention, the thickness of the first dielectric layer Ie1 is between 0.01 microns and 50 microns, and the thickness of the flexible support layer FS is between 5 microns and 350 microns. Generally, the first dielectric layer Ie1 includes a Polymer matrix (Polymer matrix) and a plurality of dielectric particles doped in the Polymer matrix, wherein the dielectric particles can be a high dielectric material, a low dielectric material, or a mixture of any two of the above materials. The series of different types of dielectric particles are listed in the following table (2) for reference, and are not intended to limit the material composition of the first dielectric layer Ie 1. However, it should be further noted that the first dielectric layer Ie1 can also be a sputtered layer. In particular, the sputtering layer comprises a perovskite (perovskite) or a spinel (spinel) structure, and is added with a trace element; wherein the trace element is any one of the following: lanthanoid elements, osmium-based elements, rare earth elements, or alkaline earth elements. It is noted that the trace elements are used to adjust the amount of inner donner and acceptor in perovskite (perovskite) structure or spinel (spinel) structure, so that the whole sputtered layer has low/highk and highQ dielectric properties.
Watch (2)
On the other hand, the flexible supporting layer FS is a flexible substrate. More specifically, a flexible substrate having a thickness of less than 200 μm is flexible. In the present invention, the material of the flexible support layer FS may be any one of the following materials: a rubber resin, polybutadiene or a core-shell polymer, polyethylene terephthalate (PET), Polyimide (PI), Polytetrafluoroethylene (PVDF), Polyetheretherketone (PEEK), Polytetrafluoroethylene (PTFE), an Epoxy resin (Epoxy), or a blend of any two or more thereof.
Furthermore, one surface of the adhesion layer Ad is bonded to the other surface of the flexible support layer FS, and has a thickness of less than 2 μm. In the present invention, the material of the adhesion layer Ad can be any one of the following materials: nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys, or tungsten-based alloys, and the relevant exemplary materials can be referred to above (1). On the other hand, the process material of the adhesion layer Ad can also be nickel-copper alloy, nickel-titanium alloy, copper-titanium alloy, or chromium-nickel alloy.
Fig. 3B is a schematic perspective view of a second embodiment of a flexible resistor-capacitor composite copper film structure according to the present invention. As shown in fig. 3B, a second embodiment of the PSD with the flexible resistor-capacitor composite copper film structure of the present invention includes: a first conductive metal layer 11, a first resistance layer 12, a first dielectric layer Ie1, a second resistance layer 22, and a second conductive metal layer 21. On the other hand, fig. 3C is a schematic perspective view of a third embodiment of the flexible resistor-capacitor composite copper film structure according to the present invention. As shown in fig. 3C, a third embodiment of the PSD with the flexible resistor-capacitor composite copper film structure of the present invention includes: a first conductive metal layer 11, a first resistance layer 12, a first dielectric layer Ie1, a flexible supporting layer FS, a second dielectric layer Ie2, a second resistance layer 22, and a second conductive metal layer 21. As can be seen from a comparison between fig. 3B and fig. 3C, the flexible rc composite cu film structure of the third embodiment further includes a flexible supporting layer FS and a second dielectric layer Ie2, which are interposed between the second resistive layer 22 and the first dielectric layer Ie 1. More specifically, one surface of the flexible support layer FS is bonded to the other surface of the first dielectric layer Ie1, and one surface of the second dielectric layer Ie2 is bonded to the other surface of the flexible support layer FS, such that one surface of a second resistive layer 22 is bonded to the other surface of the second dielectric layer Ie 2. It is particularly emphasized that the above description has described the common process materials for the first dielectric layer Ie1, and the common process materials for the second dielectric layer Ie2 are substantially the same as the first dielectric layer Ie1, and therefore, the description thereof will not be repeated.
Further, fig. 3D is a schematic perspective view of a fourth embodiment of the flexible resistor-capacitor composite copper film structure according to the invention. As shown in fig. 3D, a fourth embodiment of the PSD with the flexible resistor-capacitor composite copper film structure of the present invention includes: a first conductive metal layer 11, a first resistance layer 12, a first flexible supporting layer FS1, a first dielectric layer Ie1, a second flexible supporting layer FS2, a second resistance layer 22, and a second conductive metal layer 21. One surface of the first resistance layer 12 is bonded to one surface of the first conductive metal layer 11, one surface of the first flexible supporting layer FS1 is bonded to the other surface of the first resistance layer 12, one surface of the first dielectric layer Ie1 is bonded to the other surface of the first flexible supporting layer FS1, one surface of the second flexible supporting layer FS2 is bonded to the other surface of the first dielectric layer Ie1, and one surface of the second resistance layer 22 is bonded to the other surface of the second flexible supporting layer FS 2. Further, the second conductive metal layer 21 is formed on the other surface of the second resistance layer 22.
Specifically, the main technical features of the present invention are: the dielectric constant of the second dielectric layer Ie2 and/or the first dielectric layer Ie1 can be easily controlled within the range of 4 to 68 by using material design, and at the same time, the dielectric loss of the second dielectric layer Ie2 and the first dielectric layer Ie1 can be less than 0.02. In terms of material composition, the second dielectric layer Ie2 and the first dielectric layer Ie1 both comprise: a first dielectric material, a second dielectric material, a polymer adhesive material, and a hardening material. The first dielectric material has a high dielectric constant and a low loss factor, and the second dielectric material is used as a dielectric constant regulator, and has a low dielectric constant and a low loss factor. The first dielectric material is selected such that, after sintering, the first dielectric material must have a dielectric constant greater than 999 (i.e., ≦ 1000) and a loss factor less than 0.029 (i.e., ≦ 0.3). Thus, barium titanate, lead oxide (PbO) doped barium titanate, yttrium oxide (Y2O3) doped barium titanate, magnesium oxide (MgO) doped barium titanate, or calcium oxide (CaO) doped barium titanate may be suitable as the first dielectric material. On the other hand, the second dielectric material is selected provided that after being subjected to sintering, the dielectric constant of the second dielectric material must be less than 5, and the loss factor thereof must be less than 0.01. Thus, suitable as the second dielectric material may be polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).
In the present invention, the polymer adhesive material must have a semi-curing property, that is, a property of softening by heating and pressurizing and curing by reaction after cooling. Therefore, after the polymer adhesive material is used to bond the first dielectric material and the second dielectric material, a semi-cured dielectric material can be obtained, and the semi-cured dielectric material becomes the first dielectric layer Ie1 and the second dielectric layer Ie2 after a pressing and sintering process. Since the first dielectric material and the second dielectric material are selected properly in the present invention, the dielectric constant of the finally manufactured first dielectric layer Ie1 and second dielectric layer Ie2 is greater than 8, and the loss factor thereof is less than 0.02. It should be noted that the polymer adhesive material may be any one of the following materials: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.
Stated in more detail, the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing. On the other hand, the phosphorus-containing resin suitable as the polymer binder material may be 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or a phosphorus-containing bisphenol A phenol resin.
Besides the polymer adhesive material, the first dielectric material and the second dielectric material, the material composition of the first dielectric layer Ie1 and the second dielectric layer Ie2 further includes a hardening material, and the hardening material may be any one of the following materials: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent. More specifically, the crosslinking agent is an amine adduct, and the amine adduct can be any of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides. In another aspect, the hardening enhancer may be any one of: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.
In keeping with the above description, the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound. Also, the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above. In another aspect, the toughening agent can be any of: rubber resin, polybutadiene, or core-shell polymers. Further, the solvent may be any one of the following: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.
Stated further, the leveling agent may be a copolymer containing pigment affinity groups adsorbed on silica, as produced by BYK, germany, such as: BYK-3950P, BYK-3951P, BYK-3955P and Disperbyk-2200. Also, the anti-foaming agent may be an isoparaffin, paraffin based naphthenic mixture produced by BYK, germany, such as: BYK-1790, BYK-1794 and BYK-A530. On the other hand, the anti-settling agent and the liquid anti-thixotropic control agent may be modified urea solution (e.g., BYK-7410ET) produced by BYK, Germany, and the wetting dispersant may be hydroxy-functional carboxylic acid ester, linear high molecular copolymer, polyester with a high degree of chemical structure and acrylic copolymer produced by BYK, Germany, such as: disperbyk-107, Disperbyk-111, Disperbyk-118, Disperbyk-2013 and Disperbyk-9010. Furthermore, the substrate wetting agent can be fluorine-free polyether modified dimethyl siloxane and polyether modified dimethyl siloxane produced by Germany BYK, such as: BYK-3455 and BYK-333.
Manufacture of flexible resistance-capacitance composite copper film structure
Continuing to refer to FIG. 3B, and referring to FIG. 4, a schematic process flow diagram of the soft RC composite copper film structure of the present invention is shown. The manufacturing process of the second embodiment of the PSD structure of the flexible resistor capacitor comprises the following steps:
(1) as shown in fig. 4 (a), a first resistance layer 12 is formed on a surface of the first metal conductive layer 11 by sputtering process to obtain a first resistance copper film unit CR 1;
(2) as shown in fig. 4 (b), a second resistance layer 22 is formed on a surface of the second metal conductive layer 21 by sputtering process to obtain a second resistance copper film unit CR 2;
(3) as shown in fig. 4 (c), a semi-cured first dielectric layer Ie1 is disposed between the first cu film CR1 and the second cu film CR2, and a vacuum thermocompression bonding process is performed thereon; and
(4) as shown in fig. 4 (d), after the vacuum thermocompression bonding process is completed, the PSD of the flexible resistor-capacitor composite copper film structure of the present invention is obtained.
Manufacture of flexible resistance-capacitance composite copper film structure
Continuing to refer to FIG. 3C, and referring to FIG. 5, a schematic process flow diagram of the soft RC composite copper film structure of the present invention is shown. The manufacturing process of the third embodiment of the PSD structure of the flexible resistor and capacitor comprises the following steps:
(1a) as shown in fig. 5 (a), a first resistance layer 12 is formed on a surface of the first metal conductive layer 11 by sputtering process to obtain a first resistance copper film unit CR 1;
(2a) as shown in fig. 5 (b), a second resistance layer 22 is formed on a surface of the second metal conductive layer 21 by sputtering process to obtain a second resistance copper film unit CR 2;
(3a) as shown in fig. 5 (c), a coating process is performed to bond the semi-cured first dielectric layer Ie1 and the semi-cured second dielectric layer Ie2 to two surfaces of a flexible supporting layer FS, respectively, so as to obtain a dielectric unit CI;
(4a) as shown in fig. 5 (d), the dielectric layer unit CI is disposed between the first resistance copper film unit CR1 and the second resistance copper film unit CR2, and then a vacuum thermocompression bonding process is performed on the three units; and (5a) after completing the vacuum thermal compression bonding process, obtaining the PSD of the composite copper film structure of the invention, wherein any bubble or bonding irregularity is not generated between any two bonding units.
Production of flexible resistance-capacitance composite copper film structure
With continuing reference to FIG. 3D, and with further reference to FIG. 6, a schematic process flow diagram of the soft RC composite copper film structure of the present invention is shown. The manufacturing process of the fourth embodiment of the PSD of the present invention comprises the following steps:
(1b) as shown in fig. 6 (a), a first resistive layer 12 is formed on one surface of the first metal conductive layer 11 by a sputtering process, and a first flexible supporting layer FS1 is bonded to the other surface of the first metal conductive layer 11 to obtain a first stacked unit ST 1;
(2b) as shown in fig. 6 (b), a second resistive layer 22 is formed on one surface of the second metal conductive layer 21 by sputtering, and a second flexible supporting layer FS2 is bonded to the other surface of the second metal conductive layer 21 to obtain a second stacked unit ST 2;
(3b) as shown in fig. 6 (c), a semi-cured first dielectric layer Ie1 is disposed between the first stacked unit ST1 and the second stacked unit ST2, and then a vacuum thermocompression bonding process is performed on the three; and
(4b) as shown in fig. 6 (d), after the vacuum thermocompression bonding process is completed, the PSD of the flexible resistor-capacitor composite copper film structure of the present invention is obtained.
Application of flexible resistor-capacitor composite copper film structure
In particular, after applying a developing and etching process to the PSD of the present invention, a first electronic circuit including at least one thin Film resistor (Film resistor), at least one thin Film inductor (Film inductor), and at least one thin Film capacitor (Film capacitor) can be fabricated on a top surface of the PSD; and, a second electronic circuit including at least one thin film resistor element, at least one thin film inductor element and at least one thin film capacitor element can be simultaneously manufactured on a bottom surface of the flexible resistor-capacitor composite copper film structure. Hereinafter, the decomposition operation diagram of the development etching process will be described.
Fig. 7A to 7D are exploded views of the development etching process of the flexible resistor-capacitor composite copper mold structure according to the present invention. Please refer to fig. 3C and fig. 7A. When performing the developing and etching process, first, a first photoresist PR1 is coated on the first conductive metal layer 11 and the second conductive metal layer 21 (as shown in fig. 7A (a) and fig. 7 b); then, a patterned first photoresist pPR1 is formed on the first conductive metal layer 11 and the second conductive metal layer 21 by exposure and development (as shown in fig. 7A (a ') and (b').
Continuously, an etching solution is used to simultaneously remove the first conductive metal layer 11 and the first resistance layer 12 not covered by the patterned first photoresist pPR1, and the etching solution is also used to remove the second conductive metal layer 21 and the second resistance layer 22 not covered by the patterned first photoresist pPR1 (as shown in fig. 7B (a) and (B)). Next, as shown in fig. 7B (a ') and (B'), the patterned first photoresist pPR1 is removed, and then a patterned first conductive metal layer p11 is obtained on the first dielectric layer Ie1, and a patterned second conductive metal layer p21 is obtained on the second dielectric layer Ie 2. It should be noted that, with the aid of fig. 3C, it should be understood that the first dielectric layer Ie1 and the second dielectric layer Ie2 are respectively bonded to two surfaces of the flexible supporting layer FS.
Next, as shown in fig. 7C (a) and (b), a second photoresist PR2 is sequentially coated on the patterned first conductive metal layer p11 and the first dielectric layer Ie1, and the second photoresist PR2 is simultaneously coated on the patterned second conductive metal layer p21 and the second dielectric layer Ie 2. It should be noted that fig. 7C illustrates the second photoresist PR2 in a semi-transparent material for the purpose of completely showing the changes of the patterned first conductive metal layer p11 and the patterned second conductive metal layer p21 in the subsequent manufacturing process. In fig. 7C, in particular, a first etching window W11 and a second etching window W12 are opened on the top surface of the second photoresist PR2, and the first etching window W11 and the second etching window W12 are oppositely located above the patterned first conductive metal layer p 11. Meanwhile, a third etching window W21 and a fourth etching window W22 are also formed on the second photoresist PR2, and the third etching window W21 and the fourth etching window W22 are located above the patterned second conductive metal layer p 21.
Continuously, the patterned first conductive metal layer p11 is removed from the portion not covered by the second photoresist PR2 through the first etching window W11 and the second etching window W12 using an etching solution. Meanwhile, the portion of the patterned second conductive metal layer p11 not covered by the second photoresist PR2 is also removed through the third etching window W21 and the fourth etching window W21 using an etching solution. In the case of the auxiliary comparison fig. 3C, it should be understood that, after the wet etching is completed by using the etching solution, as shown in fig. 7C (a ') and (b'), a portion of the first resistance layer 12 is exposed through the first etching window W11 and the second etching window W12, and a portion of the first resistance layer 22 is also exposed through the third etching window W21 and the fourth etching window W22.
Finally, as shown in fig. 7D (a) and (b), after the second photoresist PR2 is removed, a first electrical trace including the patterned first conductive metal layer p11, a first sheet resistor R1, a first sheet inductor L1, and an upper metal plate UM is formed on the first dielectric layer Ie 1. Meanwhile, a second electronic circuit including a patterned second conductive metal layer p21, a second thin film resistor R2, a second thin film inductor L2, and a lower metal plate LM is disposed on the second dielectric layer Ie 2. It should be noted that the upper metal plate UM and the lower metal plate LM sandwich the first resistance layer 12, the first dielectric layer Ie1, the flexible support layer FS, the second dielectric layer Ie2, and the second resistance layer 12. It should be understood that the first resistive layer 12, the first dielectric layer Ie1, the flexible support layer FS, the second dielectric layer Ie2, and the second resistive layer 12 serve as capacitor dielectric layers, such that the upper metal plate UM, the capacitor dielectric layers, and the lower metal plate LM constitute an Embedded capacitor (Embedded capacitor).
Further, a first through hole TH1 may be formed on a first contact CP1 of the first electronic circuit and a second through hole TH2 may be formed on a second contact CP2 of the second electronic circuit by laser etching. It will be appreciated by an electronic engineer familiar with the fabrication of a two-layer circuit board that the body of the first electronic circuit is the patterned first conductive metal layer p11 and the body of the second electronic circuit is the patterned second conductive metal layer p 21. Further, the first contact CP1 and the second contact CP2 can be electrically connected by filling the first through hole TH1 and the first through hole TH2 with a conductive material (e.g., solder), thereby electrically connecting the first electronic circuit and the second electronic circuit.
Therefore, as can be seen from fig. 7A to 7D, after performing the developing and etching processes twice on the PSD of the present invention, a first electronic circuit including at least one first thin film resistor R1, at least one first thin film inductor L1, and at least one thin film capacitor element can be fabricated on a top surface of the PSD; and, a second electronic circuit including at least one second thin film resistor element R2, at least one second thin film inductor element L2 and at least one thin film capacitor element is also fabricated on a bottom surface of the PSD. Of course, the first electronic circuit can be coupled to the second electronic circuit by forming the through holes (TH1, TH2) on the PSD.
In particular, in addition to being directly applied to a flexible printed circuit board (FPC), the PSD of the present invention can be combined with at least one circuit board to form a Rigid-flex board (rid-flex board).
Examples of the experiments
In order to confirm that the PSD of the present invention is indeed compared with the copper foil resistor 1 'of the passive electrical structure PE' (shown in FIG. 1) disclosed in the US patent publication No. US2006/0286696A1, it is shownThe inventors of the present invention have completed the production of the copper foil resistor units (CR1, CR2) shown in fig. 5 and the samples of the copper foil resistor 1' shown in fig. 1 at the same time, which are excellent in properties. Fig. 8 is an image of Electron back-scattered diffraction (EBSD) of a sample of the copper foil resistance disclosed in U.S. patent publication No. US2006/0286696a1, and fig. 9 is an EBSD image of a sample of the copper foil resistance of the flexible resistance-capacitance composite copper film structure of the present invention. In contrast to the conventional technique of electroplating a nickel-phosphorus compound (Ni-P compound) onto the matte side (Matt side) of the first rolled copper layer 11 'to form the so-called resistive layer 12', the present invention forms an alloy, metal, or metal compound resistive film (i.e., the first resistive layer 12) on a first conductive metal layer 11 (e.g., copper foil) by sputtering. Furthermore, as can be seen from fig. 7, since the film generated by electroplating nucleates and grows along the surface of the copper foil conductor, the discontinuity and high roughness of the plating layer are all the adverse effects on the electrical (surface resistance), mechanical properties (bending and stretching) and the (fine) line yield. In contrast, as can be seen from FIG. 8, Ni was produced by sputtering0.97Cr0.3The alloy resistive layer 12 is microscopically continuous, dense, and has a small surface roughness, and is suitable for bendable products and fine line design. The resistance film of the copper film resistor unit CR has better coating compactness and continuity.
Then, a bending test is performed on a half structure of the flexible resistor-capacitor composite copper film structure PSD of the present invention, wherein the half structure only includes a first conductive metal layer 11, a first resistance layer 12, a first dielectric layer Ie1, and a flexible supporting layer FS. Fig. 9 is a schematic diagram of the execution flow of the bending test. As shown in fig. 10 (a) and (b), three sets of samples with different copper layer thicknesses were subjected to bending test by using a bending tester to control the radius of the circular axis (bending) to be 1.5mm, and the single-sided flexible resistance-capacitance composite copper film was bent from 0 degree to 90 degrees; then, as shown in fig. 10 (b) and (c), the one-sided flexible resistance-capacitance composite copper film was continuously bent from 90 degrees to 180 degrees with a load of 0.5 kg by a bending tester with a radius of 1.5mm on the circular axis (bending). The procedure of the graphs (a) to (C) was repeated 5000 times throughout the first bending test, and the test was carried out in accordance with the test specification of JIS-C-50168.7. The experimental data of the bending test are compiled in fig. 10.
From the experimental data of the bending test in fig. 10, it can be easily found that the half structure of the PSD of the present invention is bent 5000 times with a bending radius of 1.5 mm. The measuring resistance of the first resistance layer 12 in the half structure of the PSD of the present invention is not changed. In the process of completing the bending test of a half structure of the PSD (phase-sensitive detector) of the flexible resistor-capacitor composite copper film structure by using a bending tester with the radius of a circular shaft of 1.5mm, the phenomena of no conductivity, film stripping and copper fracture begin to occur after the bending times exceed 5000 times; the thinner the copper thickness, the better the bending resistance. Therefore, the test results show that the alloy, metal, or metal compound resistor film (i.e., the first resistor layer 12) formed on the first conductive metal layer 11 (e.g., copper foil) by sputtering has very good adhesion with the copper foil, thereby improving the reliability and flexibility of the copper foil resistor units (CR1, CR 2).
Thus, the above description has completely and clearly illustrated all embodiments and structural compositions of the PSD of the present invention; moreover, the present invention has the following advantages as follows:
(1) the PSD of the soft resistance-capacitance composite copper film structure comprises: a first conductive metal layer 11, a first resistance layer 12, a first dielectric layer Ie1, a flexible supporting layer FS, a second dielectric layer Ie2, a second resistance layer 12, and a second conductive metal layer 22. Particularly, after applying the developing and etching treatment twice to the flexible resistor-capacitor composite copper film structure PSD of the present invention, a first electronic circuit including at least one first thin film resistor R1, at least one first thin film inductor L1, and at least one thin film capacitor element can be fabricated on a top surface of the flexible resistor-capacitor composite copper film structure PSD; and, a second electronic circuit including at least one second thin film resistor element R2, at least one second thin film inductor element L2 and at least one thin film capacitor element is also fabricated on a bottom surface of the PSD. Of course, the first electronic circuit can be coupled to the second electronic circuit by forming through holes (TH1, TH2) on the PSD.
(2) In particular, in addition to being directly applied to a Flexible Printed Circuit (FPC), the flexible rc cu film structure of the present invention can be combined with at least one circuit board to form a Rigid-flex board (gilid-flex board).
(2) It should be emphasized that the sputtered resistive layer 12 has better plating density and continuity, and thus the minimum sheet resistance can be less than or equal to 5 ohm/□. Meanwhile, the alloy, metal or metal compound resistance film (resistance layer 12) manufactured by the sputtering technology can also effectively reduce the generation of industrial waste water.
(3) The sputtered resistance layer 12 has excellent coating density and continuity, after the electronic circuit is manufactured by the embedded passive element structure PSD by the development etching technology, the line width/line distance of the electronic circuit can be controlled to be less than 10 micrometers/10 micrometers, and the embedded flexible resistance-capacitance composite copper film has excellent bendability as shown by a bending test.
(4) The process is simple, and the embedded RLC circuit can be completed only by two etching processes and one drilling and plating process.
(5) The dielectric layer developed by the invention has excellent dielectric constant and dielectric loss factor, and the material composition and design are unique and novel; the dielectric constant value can be higher than the highest level k >30 in the industry at present, which is beneficial to the future use of miniaturized circuit design.
It should be emphasized that the above detailed description is specific to possible embodiments of the invention, but this is not intended to limit the scope of the invention, and equivalents and modifications, which do not depart from the technical spirit of the invention, are intended to be included within the scope of the invention.
Claims (60)
1. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first dielectric layer having one surface bonded to the other surface of the first resistive layer;
a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;
a bonding layer having one surface bonded to the other surface of the flexible support layer; and
a second conductive metal layer formed on the other surface of the junction layer.
2. The composite copper mold structure of claim 1, wherein:
the first dielectric layer includes:
a first dielectric material having a first dielectric constant and a first loss factor;
a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and
and a polymer adhesive material, wherein after the first dielectric material and the second dielectric material are adhered by the polymer adhesive material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material becomes the first dielectric layer after an ingot pressing and sintering process.
3. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:
wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped2O3) Barium titanate, barium titanate doped with magnesium oxide (MgO), or barium titanate doped with magnesium oxide (MgO)Barium titanate of calcium oxide (CaO).
4. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:
wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).
5. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:
the dielectric constant of the first dielectric layer is larger than 8, and the loss factor is smaller than 0.02.
6. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:
wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.
7. The composite copper mold structure of claim 6, wherein:
wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.
8. The composite copper mold structure of claim 6, wherein:
wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.
9. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:
wherein the first dielectric layer further comprises a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.
10. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:
wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.
11. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:
wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.
12. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:
wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.
13. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:
wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.
14. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:
wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.
15. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:
wherein the solvent may be any one of: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.
16. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first dielectric layer having one surface bonded to the other surface of the first resistive layer;
a second resistance layer having one surface bonded to the other surface of the first dielectric layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy; and
a second conductive metal layer formed on the other surface of the second resistance layer.
17. A flexible resistor capacitor composite copper mold structure according to claim 16, wherein:
the first dielectric layer includes:
a first dielectric material having a first dielectric constant and a first loss factor;
a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and
and a polymer adhesive material, wherein after the first dielectric material and the second dielectric material are adhered by the polymer adhesive material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material becomes the first dielectric layer after an ingot pressing and sintering process.
18. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:
wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped2O3) Barium titanate doped with magnesium oxide (MgO), or barium titanate doped with calcium oxide (CaO).
19. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:
wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).
20. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:
the dielectric constant of the first dielectric layer is larger than 8, and the loss factor is smaller than 0.02.
21. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:
wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.
22. A flexible resistor capacitor composite copper mold structure according to claim 21, wherein:
wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.
23. A flexible resistor capacitor composite copper mold structure according to claim 21, wherein:
wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.
24. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:
wherein the first dielectric layer further comprises a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.
25. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:
wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.
26. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:
wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.
27. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:
wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.
28. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:
wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.
29. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:
wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.
30. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:
the solvent may be any one of the following: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.
31. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first dielectric layer having one surface bonded to the other surface of the first resistive layer;
a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;
a second dielectric layer having one surface bonded to the other surface of the flexible support layer
A second resistance layer having one surface bonded to the other surface of the second dielectric layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy; and
a second conductive metal layer formed on the other surface of the second resistance layer.
32. A flexible resistor capacitor composite copper mold structure according to claim 31, wherein:
wherein the first dielectric layer and the second dielectric layer both comprise:
a first dielectric material having a first dielectric constant and a first loss factor;
a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and
and a polymer adhesive material, wherein the polymer adhesive material is used for bonding the first dielectric material and the second dielectric material to obtain a semi-cured dielectric material, and the semi-cured dielectric material is formed into the first dielectric layer and the second dielectric layer after an ingot pressing and sintering process.
33. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:
wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped2O3) Barium titanate doped with magnesium oxide (MgO), or barium titanate doped with calcium oxide (CaO).
34. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:
wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).
35. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:
wherein the dielectric constants of the first and second dielectric layers are both greater than 8, and the loss factors thereof are both less than 0.02.
36. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:
wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.
37. A flexible resistor capacitor composite copper mold structure according to claim 36, wherein:
wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.
38. A flexible resistor capacitor composite copper mold structure according to claim 36, wherein:
wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.
39. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:
wherein the first dielectric layer and the second dielectric layer each further comprise a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.
40. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:
wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.
41. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:
wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.
42. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:
wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.
43. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:
wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.
44. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:
wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.
45. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:
wherein the solvent may be any one of: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.
46. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:
a first conductive metal layer;
a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;
a first flexible supporting layer, one surface of which is combined with the other surface of the first resistance layer;
a first dielectric layer, one surface of which is combined with the other surface of the first flexible supporting layer;
a second flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;
a second resistance layer, one surface of which is bonded to the other surface of the second flexible supporting layer and which is made of nickel, chromium, tungsten, nickel metal compound, chromium metal compound, tungsten metal compound, nickel-based alloy, chromium-based alloy, or tungsten-based alloy; and
a second conductive metal layer formed on the other surface of the second resistance layer.
47. A soft RC composite Cu die structure as recited in claim 46, wherein:
the first dielectric layer includes:
a first dielectric material having a first dielectric constant and a first loss factor;
a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and
and a polymer adhesive material, wherein after the first dielectric material and the second dielectric material are adhered by the polymer adhesive material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material becomes the first dielectric layer after an ingot pressing and sintering process.
48. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:
wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped2O3) Barium titanate doped with magnesium oxide (MgO), or barium titanate doped with calcium oxide (CaO).
49. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:
wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).
50. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:
the dielectric constant of the first dielectric layer is larger than 8, and the loss factor is smaller than 0.02.
51. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:
wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.
52. A soft resistor capacitor composite copper mold structure as recited in claim 51, wherein:
wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.
53. A soft resistor capacitor composite copper mold structure as recited in claim 51, wherein:
wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.
54. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:
wherein the first dielectric layer further comprises a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.
55. A soft RC composite Cu die structure as claimed in claim 54, wherein:
wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.
56. A soft RC composite Cu die structure as claimed in claim 54, wherein:
wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.
57. A soft RC composite Cu die structure as claimed in claim 54, wherein:
wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.
58. A soft RC composite Cu die structure as claimed in claim 54, wherein:
wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.
59. A soft RC composite Cu die structure as claimed in claim 54, wherein:
wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.
60. A soft RC composite Cu die structure as claimed in claim 54, wherein:
wherein the solvent may be any one of: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108135150A TW202114490A (en) | 2019-09-27 | 2019-09-27 | Resistor and capacitor embedded flexible copper foil structure and printed circuit board structure using the same |
| TW108135150 | 2019-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111315129A true CN111315129A (en) | 2020-06-19 |
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| CN201911327876.6A Withdrawn CN111315129A (en) | 2019-09-27 | 2019-12-20 | Flexible resistor-capacitor composite copper film structure and circuit board structure using same |
| CN201922313893.6U Expired - Fee Related CN211831344U (en) | 2019-09-27 | 2019-12-20 | Flexible resistance-capacitance composite copper film structure |
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| CN201922313893.6U Expired - Fee Related CN211831344U (en) | 2019-09-27 | 2019-12-20 | Flexible resistance-capacitance composite copper film structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112087878A (en) * | 2020-09-14 | 2020-12-15 | 深圳市志凌伟业光电有限公司 | Etching method of composite copper film structure |
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| WO2017124668A1 (en) * | 2016-01-18 | 2017-07-27 | 广东生益科技股份有限公司 | Resin composition, and prepreg and laminated board using same |
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-
2019
- 2019-09-27 TW TW108135150A patent/TW202114490A/en unknown
- 2019-12-20 CN CN201911327876.6A patent/CN111315129A/en not_active Withdrawn
- 2019-12-20 CN CN201922313893.6U patent/CN211831344U/en not_active Expired - Fee Related
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| CN101501795A (en) * | 2005-02-22 | 2009-08-05 | 奥克-三井有限公司 | Method of making multilayered construction for use in resistors and capacitors |
| CN101204126A (en) * | 2005-06-21 | 2008-06-18 | 3M创新有限公司 | Passive electrical article |
| CN103509329A (en) * | 2012-06-28 | 2014-01-15 | 中山台光电子材料有限公司 | Low dielectric resin composite and copper foil base plate applying composite as well as printed circuit board |
| WO2017124668A1 (en) * | 2016-01-18 | 2017-07-27 | 广东生益科技股份有限公司 | Resin composition, and prepreg and laminated board using same |
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| CN112087878A (en) * | 2020-09-14 | 2020-12-15 | 深圳市志凌伟业光电有限公司 | Etching method of composite copper film structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202114490A (en) | 2021-04-01 |
| CN211831344U (en) | 2020-10-30 |
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