CN111312860A - 降低N-Topcon晶硅太阳能电池边缘复合的方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000006798 recombination Effects 0.000 title claims abstract description 28
- 238000005215 recombination Methods 0.000 title claims abstract description 28
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 239000000969 carrier Substances 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000010329 laser etching Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
本发明公布了一种降低N‑Topcon晶硅太阳能电池边缘复合的方法,所述方法原有N‑topcon工艺基础上,在N‑Topcon电池正面经过B元素掺杂处理后,增加正面激光边缘刻蚀处理;在背面经过P元素掺杂处理后,增加背面激光边缘刻蚀处理,降低了正、背面边缘30~100um区域内载流子的横向传输能力,改善边缘复合电流,降低N‑Topcon晶硅太阳能电池边缘复合的几率,提升光电转换效率。
Description
技术领域
本发明涉及一种降低N-Topcon电池边缘复合的方法,属于晶硅太阳能电池生产技术领域。
背景技术
在晶硅太阳能电池制造工艺中,光学损失、复合损失以及电阻损失是限制晶硅太阳能电池光电转换效率极限的3大损失机制,其中正背表面、基体、边缘、PN结耗尽区以及金属接触区都存在复合损失,对于不同结构的电池,不同区域的复合占比具有一定差异。
N-Topcon电池正、背面分别经过B、P元素掺杂处理,导致正、背表面都具有很强的载流子横向传输能力;且正、背面分别有AlOx/SiNx、 SiO2/Poly-Si钝化处理,表面复合损失非常小。该结构电池正背表面钝化效果均比较好,因此正背表面复合比较小;且正背表面载流子横向传输能力比较强,因此边缘复合比较大。此起彼伏,因此增加了边缘复合占总复合的比例;综合以上两点,边缘区域复合在N-Topcon电池中的复合占比要远大于其它结构电池。
发明内容
为了解决上述背景技术中的问题,本发明的目的是提供一种能够降低N-Topcon晶硅太阳能电池边缘复合的方法,增加了两次激光刻蚀工艺,降低了正、背面边缘30~100um区域内载流子的横向传输能力,改善边缘复合电流,提升了光电转换效率。
本发明降低N-Topcon晶硅太阳能电池边缘复合的方法,所述方法原有N-topcon工艺基础上,在N-Topcon电池正面经过B元素掺杂处理后,增加正面激光边缘刻蚀处理;在背面经过P元素掺杂处理后,增加背面激光边缘刻蚀处理,降低了正、背面边缘30~100um区域内载流子的横向传输能力,改善边缘复合电流,降低N-Topcon晶硅太阳能电池边缘复合的几率,提升光电转换效率。
进一步的,所述方法具体为:
步骤一,在N-Topcon电池正面B元素掺杂后,利用激光脉冲对正面边缘扩散区域刻蚀处理;
步骤二,在背面和侧面BSG(Boro-Silicate Glass,即硼硅玻璃)去除工艺中,对激光刻蚀区域进行抛光处理,改善损伤层以及表面悬挂键;
步骤三,在电池片背面生长SiO2/Poly-Si叠层钝化膜,以及对非晶硅Poly-Si进行P元素掺杂和退火晶化处理后,二次利用脉冲激光对背面的poly-Si边缘刻蚀处理;
步骤四,通过RCA清洗工艺对背面刻蚀区域进行抛光处理。
作为一种优选,所述步骤一中,刻蚀区域宽度在30~100um。
作为一种优选,所述步骤三中,刻蚀区域的宽度在30~100um。
本发明在原有N-Topcon工艺基础上,增加了两次激光刻蚀工艺,降低了正、背面边缘30~100um区域内载流子的横向传输能力,改善边缘复合电流,提升了光电转换效率。
附图说明
图1为N-Topcon电池正面经过B元素扩散后的示意图;
图2为N-Topcon电池背面Poly-Si膜经过P元素扩散示意图。
图中:D-正面B扩散区,W-正面激光刻蚀区,P-背面P扩散区,B-背面激光刻蚀区。
具体实施方式
下面结合附图对本发明进行详细说明:
本发明提供一种降低N-Topcon晶硅太阳能电池边缘复合的方法,所述方法原有N-topcon工艺基础上,在N-Topcon电池正面经过B元素掺杂处理后,增加正面激光边缘刻蚀处理;在背面经过P元素掺杂处理后,增加背面激光边缘刻蚀处理,降低了正、背面边缘30~100um区域内载流子的横向传输能力,改善边缘复合电流,降低N-Topcon晶硅太阳能电池边缘复合的几率,提升光电转换效率。
进一步的,所述方法具体为:
如图1所示,步骤一,在N-Topcon电池正面B元素掺杂后,利用激光脉冲对正面边缘扩散区域刻蚀处理;
步骤二,在背面和侧面BSG(硼硅玻璃)去除工艺中,对激光刻蚀区域进行抛光处理,改善损伤层以及表面悬挂键;
如图2所示,步骤三,在电池片背面生长SiO2/Poly-Si叠层钝化膜,以及对Poly-Si进行P元素掺杂和退火晶化处理后,二次利用脉冲激光对背面的非晶硅Poly-Si边缘刻蚀处理;
步骤四,通过RCA清洗工艺对背面刻蚀区域进行抛光处理。
作为一种优选,所述步骤一中,刻蚀区域宽度在30~100um。
作为一种优选,所述步骤三中,刻蚀区域的宽度在30~100um。
本发明在原有N-topcon工艺基础上,增加了两次激光刻蚀工艺,降低了正、背面边缘30~100um区域内载流子的横向传输能力,改善边缘复合电流,提升了光电转换效率。
上述仅为本申请的较佳实施例,并不用以限制本申请,凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的保护范围之内。
Claims (4)
1.降低N-Topcon晶硅太阳能电池边缘复合的方法,其特征在于,所述方法原有N-topcon工艺基础上,在N-Topcon电池正面经过B元素掺杂处理后,增加正面激光边缘刻蚀处理;在背面经过P元素掺杂处理后,增加背面激光边缘刻蚀处理,降低了正、背面边缘30~100um区域内载流子的横向传输能力,改善边缘复合电流,降低N-Topcon晶硅太阳能电池边缘复合的几率,提升光电转换效率。
2.根据权利要求1所述的降低N-Topcon晶硅太阳能电池边缘复合的方法,其特征在于,所述方法具体为:
步骤一,在N-topcon电池正面B掺杂后,利用激光脉冲对正面边缘扩散区域刻蚀处理;
步骤二,在背面和侧面BSG去除工艺中,对激光刻蚀区域进行抛光处理,改善损伤层以及表面悬挂键;
步骤三,在电池片背面生长SiO2/Poly-Si叠层钝化膜,以及对Poly-Si进行P元素掺杂和退火晶化处理后,二次利用脉冲激光对背面的poly-Si边缘刻蚀处理;
步骤四,通过RCA清洗工艺对背面刻蚀区域进行抛光处理。
3.根据权利要求2所述的降低N-Topcon晶硅太阳能电池边缘复合的方法,其特征在于,所述步骤一中,刻蚀区域宽度在30~100um。
4.根据权利要求2所述的降低N-Topcon晶硅太阳能电池边缘复合的方法,其特征在于,所述步骤三中,刻蚀区域的宽度在30~100um。
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CN112768564A (zh) * | 2021-01-20 | 2021-05-07 | 东方日升(常州)新能源有限公司 | Topcon电池的光注入钝化方法 |
WO2023083418A1 (de) * | 2021-11-11 | 2023-05-19 | Hanwha Q Cells Gmbh | Solarzelle und verfahren zur herstellung einer solarzelle |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102969401A (zh) * | 2012-12-07 | 2013-03-13 | 润峰电力有限公司 | 激光隔离高效晶体硅太阳电池的生产工艺 |
CN104362219A (zh) * | 2014-11-06 | 2015-02-18 | 天威新能源控股有限公司 | 一种晶体硅太阳能电池制造工艺 |
CN104835875A (zh) * | 2015-04-20 | 2015-08-12 | 上海大族新能源科技有限公司 | 一种晶体硅太阳电池的制备方法及其侧边激光隔离方法 |
CN106299027A (zh) * | 2016-08-30 | 2017-01-04 | 浙江启鑫新能源科技股份有限公司 | 一种n型单晶双面电池的制备方法 |
CN107968127A (zh) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | 一种钝化接触n型太阳能电池及制备方法、组件和*** |
JP2019110185A (ja) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | 太陽電池の製造方法 |
-
2020
- 2020-03-16 CN CN202010181829.1A patent/CN111312860A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102969401A (zh) * | 2012-12-07 | 2013-03-13 | 润峰电力有限公司 | 激光隔离高效晶体硅太阳电池的生产工艺 |
CN104362219A (zh) * | 2014-11-06 | 2015-02-18 | 天威新能源控股有限公司 | 一种晶体硅太阳能电池制造工艺 |
CN104835875A (zh) * | 2015-04-20 | 2015-08-12 | 上海大族新能源科技有限公司 | 一种晶体硅太阳电池的制备方法及其侧边激光隔离方法 |
CN106299027A (zh) * | 2016-08-30 | 2017-01-04 | 浙江启鑫新能源科技股份有限公司 | 一种n型单晶双面电池的制备方法 |
JP2019110185A (ja) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | 太陽電池の製造方法 |
CN107968127A (zh) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | 一种钝化接触n型太阳能电池及制备方法、组件和*** |
Non-Patent Citations (1)
Title |
---|
于波 等: "n 型双面 TOPCon 太阳电池钝化技术", 《半导体制造技术》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112768564A (zh) * | 2021-01-20 | 2021-05-07 | 东方日升(常州)新能源有限公司 | Topcon电池的光注入钝化方法 |
CN112768564B (zh) * | 2021-01-20 | 2022-08-30 | 东方日升(常州)新能源有限公司 | Topcon电池的光注入钝化方法 |
WO2023083418A1 (de) * | 2021-11-11 | 2023-05-19 | Hanwha Q Cells Gmbh | Solarzelle und verfahren zur herstellung einer solarzelle |
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