CN111304655A - Etching equipment - Google Patents
Etching equipment Download PDFInfo
- Publication number
- CN111304655A CN111304655A CN202010180756.4A CN202010180756A CN111304655A CN 111304655 A CN111304655 A CN 111304655A CN 202010180756 A CN202010180756 A CN 202010180756A CN 111304655 A CN111304655 A CN 111304655A
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- China
- Prior art keywords
- etched
- etching
- ions
- substrate
- concentration
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 150000002500 ions Chemical class 0.000 claims abstract description 34
- 238000001514 detection method Methods 0.000 claims description 29
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 18
- 229910001431 copper ion Inorganic materials 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses an etching apparatus, comprising: the variable power supply is connected with the upper and lower polar plates, and controls the concentration of ions etched in the etching solution of the etching tank at the position of the substrate to be etched by adjusting the voltage of the upper polar plate and the lower polar plate. According to the technical scheme, the voltage of the power supply is adjusted through the upper polar plate and the lower polar plate, the concentration of the etched ions at the position of the substrate to be etched is adjusted regionally, and the etching speed is further changed. There are advantages in that, first, the etching rate of different positions in the substrate to be etched can be changed, and the slope angle of the substrate to be etched can be optimized. Secondly, precise control of the etching rate can be achieved, and thirdly, the service life of the etching solution can be prolonged.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to etching equipment.
Background
In some semiconductor processes (such as preparing TFT metal wires), in order to protect the charging rate of large-sized display screens and reduce the response time requirement, it is necessary to reduce the resistance of metal wires and change the thickness of conductive materials. However, the increase in thickness causes an increase in the angle of inclination (also referred to as taper angle) and causes various defects.
On one hand, the sharp part is formed on the top of the metal wire due to the overlarge gradient angle, the upper insulating layer is punctured, and point discharge is generated to cause the breakdown among the metal wires of different layers, so that short circuit is caused. On the other hand, an excessively large slope angle may cause a void in the insulating layer covering the metal line at the bottom of the metal line, thereby causing a defect.
The taper angle of a workpiece to be etched in an etching tank is large, the service life of an etching solution (such as acidic copper chloride, alkaline copper chloride, copper nitrate, aluminum nitrate and the like) is short, and the concentration of metal ions (copper ions or iron and aluminum ions) in the etching solution cannot be controlled.
Disclosure of Invention
Therefore, it is necessary to provide an etching apparatus to solve the problem of too large slope angle due to uncontrollable etched ion concentration.
To achieve the above object, the inventors provide an etching apparatus comprising: the variable power supply is connected with the upper and lower polar plates, and controls the concentration of ions etched in the etching solution of the etching tank at the position of the substrate to be etched by adjusting the voltage of the upper polar plate and the lower polar plate.
The etching device further comprises a first detection unit, wherein the first detection unit is arranged on the side wall of the etching groove and is close to the position of the substrate to be etched, and the first detection unit is used for detecting the concentration of ions etched in the etching solution at the position of the substrate to be etched.
Further, the etching device also comprises a second detection unit which is arranged on the side wall of the etching groove and above the first detection unit.
The controller is respectively connected with the first detection unit and the variable power supply, and is used for acquiring the data of the first detection unit and changing the voltage of the variable power supply according to the data of the first check unit.
Further, the controller is used for turning on the voltage of the variable power supply to reduce the concentration of the etched ions at the position of the substrate to be etched after the etched ions detected by the first detection unit are larger than a preset value.
Further, the controller is a single chip microcomputer.
Further, the device also comprises a detection computer, and the computer is respectively connected with the variable power supply and the controller.
Further, the etched ions are copper ions.
Different from the prior art, the technical scheme adjusts the voltage of the power supply through the upper polar plate and the lower polar plate, realizes regional adjustment of the concentration of the etched ions at the position of the substrate to be etched, and further changes the etching speed of the position of the substrate to be etched. There are advantages in that, first, the etching rate of different positions in the substrate to be etched can be changed, and the slope angle of the substrate to be etched can be optimized. Secondly, precise control of the etching rate can be achieved, and thirdly, the service life of the etching solution can be prolonged.
Drawings
FIG. 1 is a schematic structural diagram of an etching apparatus according to an embodiment;
fig. 2 is a schematic structural diagram of the etching apparatus according to the second embodiment.
Description of reference numerals:
1. a polar plate;
11. a lower polar plate;
12. an upper polar plate;
2. a variable power supply;
3. etching a groove;
31. etching solution;
32. etching out ions;
33. a substrate to be etched;
4. a detection unit;
41. a first detection unit;
42. a second detection unit;
5. a controller;
6. and (4) a computer.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 2, the present embodiment provides an etching apparatus, which includes an etch bath 3, a plate 1 and a variable power source 2. The etching bath 3 is used for containing the etching solution 31 and is used for placing the substrate 33 to be etched therein. The polar plate 1 is divided into an upper polar plate 12 and a lower polar plate 11, and the upper polar plate 12 and the lower polar plate 11 are respectively arranged on the upper bottom surface and the lower bottom surface of the etching tank 3. The variable power supply 2 is connected with the upper polar plate 12 and the lower polar plate 11, and the variable power supply controls the concentration of ions etched in the etching solution of the etching tank at the position of the substrate to be etched by adjusting the voltage of the upper and lower polar plates, so that the ions etched are prevented from being accumulated at the position of the substrate to be etched. According to the technical scheme, the voltage (on and off or voltage value) of the power supply is adjusted through the upper polar plate and the lower polar plate, the concentration of the etched ions at the position of the substrate to be etched is adjusted regionally, and the etching speed of the metal layer at the position of the substrate to be etched is further changed. The method has the advantages that firstly, the etching rate of the metal layer in the substrate to be etched can be changed, and the gradient angle of the substrate to be etched is optimized. Secondly, precise control of the etching rate can be achieved, and thirdly, the service life of the etching solution can be prolonged.
In the present application, the etching solution 31 may be an acidic solution or the like, the metal to be etched may be copper or other metal, and the ions to be etched may be copper ions or other metal ions. The concentration of copper ions or the concentration of other metal ions etched in the acidic etching solution can be adjusted.
Referring to fig. 2, in the second embodiment, in order to solve the problem that the etching rate can only be calculated by visually observing the etching area of the substrate, a first detecting unit 41 of the detecting unit 4 is provided. The first detecting unit 41 is disposed on the sidewall of the etching tank 3 and near the substrate 33 to be etched, and the first detecting unit 41 is used for detecting the concentration of the ions 32 etched in the etching solution 31 at the substrate 33 to be etched. The concentration of the etching sample 32 at different heights can be detected by the first detection unit 41, and then the etching speed can be further regulated and controlled by the detection data, so that the etching speed can be accurately controlled.
The first detection unit detects the concentration of the ions etched in the etching solution to be lower than the preset concentration, the controller controls the power supply to stop outputting the voltage, the first detection unit detects the concentration of the ions etched in the etching solution to be higher than the preset concentration, and the controller controls the power supply to output the voltage. It is noted here that the specific value of the predetermined concentration varies with the characteristics of the etching solution and the substrate to be etched.
Specifically, taking the example of etching the copper ions of the substrate to be etched with copper/aluminum metal by using the copper acid etching solution, the first detection unit detects the predetermined concentration of the copper ions of 8000ppm (1 mg/kg). The controller controls the power supply to have no output voltage when the first detecting unit detects that the concentration of copper ions is lower than 8000ppm (1mg/kg), and controls the power supply to have output voltage when the first detecting unit detects that the concentration of copper ions is higher than 8000ppm (1 mg/kg). By the technical scheme, the concentration of copper ions in a metal wire soaking etching area (an area of a substrate to be etched) is controlled to be lower than 8000ppm (1mg/kg), and the slope angle of the substrate to be etched is minimum.
The detection unit (first detection unit) and the controller enable the concentration of the etched ions of the substrate to be etched to be in a preferred state by detecting and adjusting the concentration of the etched ions at different heights in the etching solution, so that the substrate to be etched has a preferred etching rate. When the etching rate is matched, a proper slope angle can be etched, and the phenomenon that the slope angle of the substrate to be etched is too large and tip discharge occurs or a film covering the top is punctured is avoided.
In the second embodiment, in order to save the power consumption of the etching apparatus, the second detecting unit 42 is provided to monitor the concentration of the etched ions, and when the concentration of the etched ions is suitable for the etching environment, the etching speed does not need to be controlled. The second detecting unit 42 is disposed on the side wall of the etch bath 3 and above the first detecting unit 41. Generally, the substrate 33 to be etched is horizontally placed in the etching chamber 3, and when the second detecting unit 42 detects that the concentration of the etched ions is high, the function of the etching apparatus for regulating the etching speed can be temporarily stopped by turning off the output of the variable power supply, so that the power consumption of the etching apparatus can be saved.
In a further embodiment, a controller 5 is provided for automatically regulating the voltage of the variable power supply in dependence on the monitoring data of the detection unit. Wherein the controller 5 is connected to the first detecting unit 41 and the variable power supply 2, respectively, and the controller 5 is configured to acquire the data of the first detecting unit 41 and to change the voltage of the variable power supply according to the data of the first checking unit 41. When the second detecting unit 42 is also present, the controller 5 connects the plurality of detecting units 4 (the first detecting unit and the second detecting unit) in series. Therefore, the concentration distribution of the etched ions can be detected and regulated at any time, and the automatic regulation of the etching rate is realized. The controller and detection unit may also implement an automated process without the need for an operator to constantly monitor and adjust the concentration of etched ions 32 and the etch rate.
Still taking the example of etching the copper ions of the substrate to be etched by the copper acid etching solution as an example, the first detection unit detects a preset concentration of 8000ppm (1mg/kg) of the copper ions, and the second detection unit detects a preset concentration of 12000ppm (1mg/kg) of the copper ions. The controller controls the power supply to have no output voltage when the first detecting unit detects that the concentration of copper ions is lower than 8000ppm (1mg/kg), and controls the power supply to have output voltage when the first detecting unit detects that the concentration of copper ions is higher than 8000ppm (1 mg/kg). When the second detection unit detects that the concentration of the copper ions is over 12000ppm (1mg/kg), the controller controls the power supply to have no output voltage, and when the second detection unit detects that the concentration of the copper ions is lower than 12000ppm (1mg/kg), the controller controls the power supply to have the output voltage. Namely, when the concentration of copper ions is lower than 8000ppm (1mg/kg) or over 12000ppm (1mg/kg), the etching equipment realizes automatic ion monitoring and etching speed regulation.
In some embodiments, it is of course possible to arrange a plurality of first detecting units or a plurality of second detecting units simultaneously to monitor the concentration of the etched ions in one region. The concentration of the etched ions can be monitored more accurately, and the error can be reduced.
In the second embodiment, in order to facilitate the monitoring and operation of the operator, a detection computer 6 is further included, and the computer 6 is respectively connected with the variable power supply 2 and the controller 5. The operator can detect the state of the etching environment, such as the etching rate, the ion concentration distribution, the slope angle of the substrate to be etched, the temperature of the etching solution, the humidity of the etching environment, etc., through the computer 6.
In the second embodiment, it is only necessary to provide sensors for detecting the etching rate, the ion concentration distribution, the slope angle of the substrate to be etched, the temperature of the etching solution, the humidity of the etching environment, and the like in the etching chamber.
In the second embodiment, the Controller 5 can control the etching auxiliary device to perform corresponding actions according to an internal preset instruction, and may be a single chip microcomputer, an ARM Controller, an fpga (field Programmable Gate array), or other Controller with similar functions, where the single chip microcomputer is, for example, a Programmable Logic Controller (PLC).
In some embodiments, in order to deal with the abnormal condition in the etching process, an alarm (e.g., a signal lamp) may be provided on the computer, and when the detection unit, the controller, the sensor or the power supply fails in the manufacturing process, a warning message may be sent to remind a worker to perform analysis and troubleshooting.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (8)
1. An etching apparatus, comprising: the variable power supply is connected with the upper and lower polar plates, and controls the concentration of ions etched in the etching solution of the etching tank at the position of the substrate to be etched by adjusting the voltage of the upper polar plate and the lower polar plate.
2. The etching apparatus according to claim 1, further comprising a first detecting unit disposed on a sidewall of the etching bath and near a position of the substrate to be etched, the first detecting unit being configured to detect a concentration of ions etched in the etching solution at the position of the substrate to be etched.
3. The etching apparatus according to claim 2, further comprising a second detecting unit disposed on a sidewall of the etch bath above the first detecting unit.
4. An etching apparatus according to claim 2 or 3, further comprising a controller connected to the first detecting unit and the variable power supply, respectively, the controller being configured to acquire data of the first detecting unit and to change a voltage of the variable power supply based on the data of the first inspecting unit.
5. The etching apparatus of claim 4, wherein the controller is configured to turn on the voltage of the variable power supply to reduce the concentration of the etched ions at the position of the substrate to be etched after the etched ions detected by the first detecting unit are greater than a predetermined value.
6. The etching apparatus of claim 4, wherein the controller is a single-chip microcomputer.
7. The etching apparatus of claim 4, further comprising a detection computer, the detection computer being connected to the variable power supply and the controller, respectively.
8. An etching apparatus according to claim 1, wherein the ions etched are copper ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010180756.4A CN111304655A (en) | 2020-03-16 | 2020-03-16 | Etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010180756.4A CN111304655A (en) | 2020-03-16 | 2020-03-16 | Etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111304655A true CN111304655A (en) | 2020-06-19 |
Family
ID=71157015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010180756.4A Pending CN111304655A (en) | 2020-03-16 | 2020-03-16 | Etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111304655A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113192864A (en) * | 2021-04-09 | 2021-07-30 | Tcl华星光电技术有限公司 | Etching groove |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250874A (en) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | Plasma etching method and computer-readable storage medium |
| JP2008078515A (en) * | 2006-09-25 | 2008-04-03 | Tokyo Electron Ltd | Plasma treatment method |
| CN103498178A (en) * | 2013-09-30 | 2014-01-08 | 南方科技大学 | Transparent conductive film and preparation method thereof |
| CN109023375A (en) * | 2018-08-30 | 2018-12-18 | 深圳市华星光电技术有限公司 | Etch fluid circulation and Etaching device |
| CN212025461U (en) * | 2020-03-16 | 2020-11-27 | 福建华佳彩有限公司 | Etching equipment |
-
2020
- 2020-03-16 CN CN202010180756.4A patent/CN111304655A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250874A (en) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | Plasma etching method and computer-readable storage medium |
| JP2008078515A (en) * | 2006-09-25 | 2008-04-03 | Tokyo Electron Ltd | Plasma treatment method |
| CN103498178A (en) * | 2013-09-30 | 2014-01-08 | 南方科技大学 | Transparent conductive film and preparation method thereof |
| CN109023375A (en) * | 2018-08-30 | 2018-12-18 | 深圳市华星光电技术有限公司 | Etch fluid circulation and Etaching device |
| CN212025461U (en) * | 2020-03-16 | 2020-11-27 | 福建华佳彩有限公司 | Etching equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113192864A (en) * | 2021-04-09 | 2021-07-30 | Tcl华星光电技术有限公司 | Etching groove |
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