CN111293192A - Method for controlling water vapor in vacuum cavity during preparation of TCO film of solar cell - Google Patents
Method for controlling water vapor in vacuum cavity during preparation of TCO film of solar cell Download PDFInfo
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- CN111293192A CN111293192A CN202010116023.4A CN202010116023A CN111293192A CN 111293192 A CN111293192 A CN 111293192A CN 202010116023 A CN202010116023 A CN 202010116023A CN 111293192 A CN111293192 A CN 111293192A
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- 238000000034 method Methods 0.000 title claims abstract description 70
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 238000009833 condensation Methods 0.000 claims abstract description 57
- 230000005494 condensation Effects 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 47
- 230000007704 transition Effects 0.000 claims abstract description 39
- 238000005259 measurement Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 35
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a method for controlling water vapor in a vacuum cavity during preparation of a TCO film of a solar cell, and belongs to the technical field of solar cell manufacturing. The method is characterized in that a low-temperature condensation pump is arranged in a transition chamber and/or a process chamber of the TCO film preparation device, and the amount of water vapor in the transition chamber and/or the process chamber is adjusted by intermittently turning on or turning off the low-temperature condensation pump. The method can accurately control the water vapor amount, and has stable process, thereby improving the preparation efficiency and quality of the TCO film.
Description
Technical Field
The invention belongs to the technical field of solar cell manufacturing, and relates to a method for controlling water vapor in a vacuum cavity during preparation of a TCO film of a solar cell.
Background
In recent years, solar cell production technology is continuously improved, production cost is continuously reduced, conversion efficiency is continuously improved, and photovoltaic power generation is increasingly widely applied and becomes an important energy source for power supply. On the way of pursuing efficiency, silicon heterojunction battery technology attracts great attention as a future high-efficiency technical route.
In the structure of the battery, in order to improve the current collection of the battery, reduce the series resistance and improve the performance of the battery, the TCO material is introduced as the electrode material of the battery. This requires the TCO to have higher electrical conductivity and light transmittance. During the preparation of TCO, PVD or RPD equipment is generally used, and during the preparation process, besides argon, oxygen and hydrogen which are commonly used, water vapor is often required to be introduced, and the appropriate amount of the water vapor obviously improves the electrical property and the optical property of the TCO film and the conversion efficiency of the cell. However, since the amount of water vapor is required to be small, excessive water vapor adversely affects the TCO film and the vacuum equipment, it is important to precisely control the amount of water vapor in the vacuum chamber. The conventional method at present mainly controls the amount of gas through the MFC, but the accuracy of the flow rate of the MFC is low at low flow rate, and the flow rate of water vapor is difficult to control accurately.
At present, in PVD or RPD equipment, in general, in order to control a process gas, a process pipeline of water vapor is added, and a gas flow controller MFC is added, and the amount of water vapor is controlled by the gas flow controller, but the accuracy of the MFC is limited, and the flow below 1sccm is difficult to be accurately controlled, but the optimal value of the water amount required in the TCO process is often below 1sccm, so the amount of water vapor cannot be well controlled by the conventional method, and the process is not optimal, and the process fluctuation is large because the flow of the MFC cannot be accurately controlled.
Disclosure of Invention
The invention aims to solve the problems and provides a method for controlling water vapor in a vacuum cavity during preparation of a TCO film of a solar cell.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for controlling water vapor in a vacuum cavity during preparation of a TCO film of a solar cell is characterized in that a low-temperature condensation pump is installed in a transition chamber and/or a process chamber of equipment for preparing the TCO film, and the amount of the water vapor in the transition chamber and/or the process chamber is adjusted by intermittently turning on or turning off the low-temperature condensation pump.
In the method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell, a residual gas analyzer is installed in the transition chamber and/or the process chamber and is connected with the low-temperature condensation pump, when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is greater than a set value, the low-temperature condensation pump is started, and when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is less than the set value, the low-temperature condensation pump is stopped.
In the method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell, the residual gas analyzer is connected with the low-temperature condensation pump through the variable-frequency controller, a signal detected by the residual gas analyzer is transmitted to the variable-frequency controller, and the frequency of the low-temperature condensation pump is adjusted through the variable-frequency controller.
In the method for controlling water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell, the TCO film preparation device is a PVD device or an RPD device.
In the method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell, the measurement range of the residual gas analyzer is 10-7-10-1Pa is between Pa.
In the method for controlling the water vapor of the vacuum cavity during the preparation of the TCO film of the solar cell, two transition chambers are respectively connected with two sides of the process chamber, and the two transition chambers are respectively connected with the wafer inlet chamber and the wafer outlet chamber.
The PVD equipment in the application is physical vapor deposition equipment, and the RPD equipment is plasma deposition equipment, and can adopt commercially available products. The TCO film is a transparent conductive film.
Compared with the prior art, the invention has the advantages that:
1. the method can accurately control the water vapor amount, and has stable process, thereby improving the preparation efficiency and quality of the TCO film.
2. The low-temperature condensation pump used in the invention mainly adsorbs water vapor at low temperature, and has a frequency conversion function, so that the amount of adsorbed water vapor can be adjusted, and the content of water molecules in the vacuum chamber can be accurately controlled.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
Fig. 1 is a schematic diagram of embodiment 1.
Fig. 2 is a schematic diagram of embodiment 2.
Fig. 3 a schematic diagram of embodiment 3.
In the figure: the device comprises a transition chamber 1, a process chamber 2, a low-temperature condensation pump 3, a residual gas analyzer 4, a variable frequency controller 5, a wafer inlet chamber 6, a wafer outlet chamber 7 and a buffer chamber 8.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Example 1
As shown in figure 1, in the method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell, a low-temperature condensation pump 3 is installed in a transition chamber 1 and a process chamber 2 of the TCO film preparation device, and the amount of the water vapor in the transition chamber 1 and/or the process chamber 2 is adjusted by intermittently turning on or off the low-temperature condensation pump. The TCO film preparation equipment is PVD equipment or RPD equipment.
Specifically, a residual gas analyzer 4 is arranged in the transition chamber and the process chamber, and the measuring range of the residual gas analyzer is 10-7-10-1Pa is between Pa. The residual gas analyzer is connected with the low-temperature condensation pump, when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is larger than a set value, the low-temperature condensation pump is started, and when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is smaller than a set valueAnd when the set value is reached, closing the low-temperature condensation pump.
The low-temperature condensation pump has the main functions that low-temperature refrigerants at minus 120 ℃ are flushed into the condensation pipe coiled on the wall of the cavity body to control the temperature of the condensation pipe, and water molecules are rapidly condensed and attached to the condensation pipe after contacting the condensation pipe at minus 120 ℃, so that the purpose of reducing the water molecules in the air is achieved, the vacuum degree in the transition chamber and/or the process chamber is controlled, and the vacuumizing speed is improved.
The residual gas analyzer is connected with the low-temperature condensation pump through a variable frequency controller 5, a signal detected by the residual gas analyzer is transmitted to the variable frequency controller, and the frequency of the low-temperature condensation pump is adjusted through the variable frequency controller. Through the frequency conversion, the temperature and the power of the condensate pump are controlled, and then the ability of the condensate pump to condense water molecules is accurately adjusted. The residual gas analyzer transmits the test data to the variable frequency controller, and the variable frequency controller automatically adjusts the self power of the low-temperature condensation pump through the analysis of the data, so that the aim of controlling the water molecule content is fulfilled.
In the present embodiment, two transition chambers 1 are respectively connected to two sides of the process chamber 2, and the two transition chambers are respectively connected to the sheet inlet chamber 6 and the sheet outlet chamber 7. Buffer chambers 8 are respectively arranged among the wafer inlet chamber 6, the wafer outlet chamber 7 and the process chamber 2.
It should be noted that the optimal range value of the water molecule content in the vacuum chamber is determined by human, that is, according to the process of the TCO film, and a person skilled in the art can set the range value of the water molecule content by himself, and the range value is used as a control basis for the variable frequency controller and the cryocondensation pump.
Example 2
As shown in FIG. 2, in the method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell, a low-temperature condensation pump 3 is installed in a transition chamber 1 of the TCO film preparation device, and the amount of the water vapor in the transition chamber 1 and/or a process chamber 2 is adjusted by intermittently turning on or off the low-temperature condensation pump. The TCO film preparation equipment is PVD equipment or RPD equipment.
Specifically, a residual gas analyzer 4 is arranged in the transition chamber, and the measuring range of the residual gas analyzer is within the range10-7-10-1Pa is between Pa. The residual gas analyzer is connected with the low-temperature condensation pump, when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is larger than a set value, the low-temperature condensation pump is started, and when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is smaller than the set value, the low-temperature condensation pump is closed.
The low-temperature condensation pump has the main functions that low-temperature refrigerants at minus 120 ℃ are flushed into the condensation pipe coiled on the wall of the cavity body to control the temperature of the condensation pipe, and water molecules are rapidly condensed and attached to the condensation pipe after contacting the condensation pipe at minus 120 ℃, so that the purpose of reducing the water molecules in the air is achieved, the vacuum degree in the transition chamber and/or the process chamber is controlled, and the vacuumizing speed is improved.
The residual gas analyzer is connected with the low-temperature condensation pump through a variable frequency controller 5, a signal detected by the residual gas analyzer is transmitted to the variable frequency controller, and the frequency of the low-temperature condensation pump is adjusted through the variable frequency controller. Through the frequency conversion, the temperature and the power of the condensate pump are controlled, and then the ability of the condensate pump to condense water molecules is accurately adjusted. The residual gas analyzer transmits the test data to the variable frequency controller, and the variable frequency controller automatically adjusts the self power of the low-temperature condensation pump through the analysis of the data, so that the aim of controlling the water molecule content is fulfilled.
In the present embodiment, two transition chambers 1 are respectively connected to two sides of the process chamber 2, and the two transition chambers are respectively connected to the sheet inlet chamber 6 and the sheet outlet chamber 7. Buffer chambers 8 are respectively arranged among the wafer inlet chamber 6, the wafer outlet chamber 7 and the process chamber 2.
It should be noted that the optimal range value of the water molecule content in the vacuum chamber is determined by human, that is, according to the process of the TCO film, and a person skilled in the art can set the range value of the water molecule content by himself, and the range value is used as a control basis for the variable frequency controller and the cryocondensation pump.
Example 3
As shown in FIG. 3, in the method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell, a low-temperature condensation pump 3 is installed in a process chamber 2 of the TCO film preparation device, and the amount of the water vapor in a transition chamber 1 and/or the process chamber 2 is adjusted by intermittently turning on or off the low-temperature condensation pump. The TCO film preparation equipment is PVD equipment or RPD equipment.
Specifically, a residual gas analyzer 4 is installed in the process chamber, and the measurement range of the residual gas analyzer is 10-7-10-1Pa is between Pa. The residual gas analyzer is connected with the low-temperature condensation pump, when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is larger than a set value, the low-temperature condensation pump is started, and when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is smaller than the set value, the low-temperature condensation pump is closed.
The low-temperature condensation pump has the main functions that low-temperature refrigerants at minus 120 ℃ are flushed into the condensation pipe coiled on the wall of the cavity body to control the temperature of the condensation pipe, and water molecules are rapidly condensed and attached to the condensation pipe after contacting the condensation pipe at minus 120 ℃, so that the purpose of reducing the water molecules in the air is achieved, the vacuum degree in the transition chamber and/or the process chamber is controlled, and the vacuumizing speed is improved.
The residual gas analyzer is connected with the low-temperature condensation pump through a variable frequency controller 5, a signal detected by the residual gas analyzer is transmitted to the variable frequency controller, and the frequency of the low-temperature condensation pump is adjusted through the variable frequency controller. Through the frequency conversion, the temperature and the power of the condensate pump are controlled, and then the ability of the condensate pump to condense water molecules is accurately adjusted. The residual gas analyzer transmits the test data to the variable frequency controller, and the variable frequency controller automatically adjusts the self power of the low-temperature condensation pump through the analysis of the data, so that the aim of controlling the water molecule content is fulfilled.
In the present embodiment, two transition chambers 1 are respectively connected to two sides of the process chamber 2, and the two transition chambers are respectively connected to the sheet inlet chamber 6 and the sheet outlet chamber 7. Buffer chambers 8 are respectively arranged among the wafer inlet chamber 6, the wafer outlet chamber 7 and the process chamber 2.
It should be noted that the optimal range value of the water molecule content in the vacuum chamber is determined by human, that is, according to the process of the TCO film, and a person skilled in the art can set the range value of the water molecule content by himself, and the range value is used as a control basis for the variable frequency controller and the cryocondensation pump.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit of the invention.
Claims (6)
1. A method for controlling water vapor in a vacuum cavity during preparation of a TCO film of a solar cell is characterized in that a low-temperature condensation pump is installed in a transition chamber and/or a process chamber of equipment for preparing the TCO film, and the amount of the water vapor in the transition chamber and/or the process chamber is adjusted by intermittently turning on or off the low-temperature condensation pump.
2. The method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell as claimed in claim 1, wherein a residual gas analyzer is installed in the transition chamber and/or the process chamber, the residual gas analyzer is connected with a low-temperature condensation pump, when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is greater than a set value, the low-temperature condensation pump is started, and when the residual gas analyzer detects that the water vapor amount in the transition chamber and/or the process chamber is less than the set value, the low-temperature condensation pump is stopped.
3. The method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell as claimed in claim 2, wherein the residual gas analyzer is connected with the low-temperature condensation pump through a variable frequency controller, a signal detected by the residual gas analyzer is transmitted to the variable frequency controller, and the frequency of the low-temperature condensation pump is adjusted through the variable frequency controller.
4. The method for controlling water vapor in the vacuum cavity during the preparation of the TCO film of the solar cell according to claim 1, wherein the TCO film preparation device is a PVD device or an RPD device.
5. The method for controlling water vapor in a vacuum chamber during the preparation of a TCO film for a solar cell according to claim 2, wherein the measurement range of the residual gas analyzer is 10-7-10-1Pa is between Pa.
6. The method for controlling the water vapor in the vacuum cavity during the preparation of the TCO film for the solar cell as claimed in claim 1, wherein two transition chambers are respectively connected to two sides of the process chamber, and the two transition chambers are respectively connected to the wafer inlet chamber and the wafer outlet chamber.
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| CN202010116023.4A CN111293192A (en) | 2020-02-25 | 2020-02-25 | Method for controlling water vapor in vacuum cavity during preparation of TCO film of solar cell |
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Cited By (2)
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| CN115274935A (en) * | 2022-08-09 | 2022-11-01 | 中威新能源(成都)有限公司 | TCO (transparent conductive oxide) coating method, TCO coating equipment, solar cell and preparation method thereof |
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Application publication date: 20200616 |