CN111245221B - Double charge pump - Google Patents

Double charge pump Download PDF

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CN111245221B
CN111245221B CN202010207163.2A CN202010207163A CN111245221B CN 111245221 B CN111245221 B CN 111245221B CN 202010207163 A CN202010207163 A CN 202010207163A CN 111245221 B CN111245221 B CN 111245221B
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switch
charge pump
drain
source
source electrode
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CN111245221A (en
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朱华平
丁学欣
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Shanghai Fourier Semiconductor Co ltd
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Xiamen Fuliye Electric Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The application discloses a double charge pump: 2P2N type, 1P3N type, and 4N type double charge pumps. On the basis of a 3P1N type double charge pump, an N type switch is used for replacing a P type switch, meanwhile, a P type switch tube with a very small area is connected in parallel to solve the starting problem, and a small charge pump is arranged in the 4N type double charge pump. Its advantages are: compared with the 3P1N double charge pump, the 2P2N double charge pump can save 20% of area, the 1P3N double charge pump can save 40% of area, and the 4N double charge pump can save 60% of area.

Description

Double charge pump
Technical Field
The present application relates to the field of semiconductor integrated circuit technology, and more particularly, to a double charge pump.
Background
In the field of mobile communication, lithium batteries are widely used to provide power for electronic devices (such as mobile phones, tablet computers, smart watches, and the like); one typical application is an audio power amplifier therein. Consumers increasingly expect this audio amplifier to output higher power to increase the loudness of music; the amplifier outputs high power, so that higher power supply voltage is required, and the voltage of the lithium battery generally ranges from 2.7V to 5.5V and cannot meet the requirement of higher output power. To solve this problem, charge pump technology is generally used to convert a low battery voltage into a high voltage to meet the requirement of high power output of the audio power amplifier.
A charge pump that is common at present is shown in fig. 1, and its operation principle is as follows:
1. charging state: switches S1 and S2 are closed, switches S3 and S4 are open, and VIN charges off-chip capacitor CFLY;
2. discharge state: switches S1 and S2 are open, switches S3 and S4 are closed, and capacitor CFLY outputs charge to COUT.
In cycles, according to the law of conservation of charge, after a period of charge and discharge, VOUT can be equal to 2 VIN without counting the charge and discharge loss.
To improve the efficiency of the charge pump, an extremely low on-resistance of the switches is required, i.e. a large chip area is required to realize a small on-resistance, so the area of the charge pump mainly comes from the switches. The existing double charge pump (3P1N type) is generally implemented by using 3P-type switches (MPS1, MPS3, MPS4) and 1N-type switch (MNS2), as shown in fig. 2. The advantage is that the circuit design is simple, but the shortcoming is that the territory area is big, especially to the audio power amplifier of high power output. The chip area of the switch realized with P-type is 3 times larger than N-type with the same on-resistance. The area of the charge pump is mainly from these switches, so that the area to implement a double charge pump with 3P1N would be large.
Disclosure of Invention
The present application provides a double charge pump that saves area.
The following technical scheme is adopted in the application:
A2P 2N type double charge pump, the double charge pump is composed of a first capacitor, a first switch, a second switch, a third switch, a fourth switch and a fifth switch; the first switch and the fourth switch are P-type switches, the second switch and the third switch are N-type switches, and the fifth switch is a P-type switching tube with a very small area; the power supply is connected with the source electrode of the first switch, the drain electrode of the first switch is connected with the source electrode of the fourth switch, the drain electrode of the fourth switch is connected with the load, the power supply is connected with the drain electrode of the third switch, the source electrode of the third switch is connected with the drain electrode of the second switch, the source electrode of the second switch is grounded, the first end of the first capacitor is connected with the drain electrode of the first switch and the source electrode of the fourth switch, the second end of the first capacitor is connected with the drain electrode of the second switch and the source electrode of the third switch, and the two ends of the third switch are connected with the fifth switch in parallel.
A1P 3N type double charge pump, the double charge pump is composed of a first capacitor, a first switch, a second switch, a third switch, a fourth switch, a fifth switch and a sixth switch; the first switch, the second switch and the third switch are N-type switches, the fourth switch is a P-type switch, and the fifth switch and the sixth switch are P-type switching tubes with very small areas; the power supply is connected with the drain of the first switch, the source electrode of the first switch is connected with the source electrode of the fourth switch, the drain electrode of the fourth switch is connected with the load, the power supply is connected with the drain electrode of the third switch, the source electrode of the third switch is connected with the drain electrode of the second switch, the source electrode of the second switch is grounded, the first end of the first capacitor is connected with the source electrode of the first switch and the source electrode of the fourth switch, the second end of the first capacitor is connected with the drain electrode of the second switch and the source electrode of the third switch, the two ends of the third switch are connected with the fifth switch in parallel, and the two ends of the first switch are connected with the sixth switch in.
A4N type double charge pump is composed of a first capacitor, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a sixth switch, a seventh switch and a small charge pump; the first switch, the second switch, the third switch and the fourth switch are N-type switches, and the fifth switch, the sixth switch and the seventh switch are P-type switching tubes; the power supply is connected with the drain of the first switch, the source of the first switch is connected with the drain of the fourth switch, the source of the fourth switch is connected with the load, the power supply is connected with the drain of the third switch, the source of the third switch is connected with the drain of the second switch, the source of the second switch is grounded, the first end of the first capacitor is connected with the source of the first switch and the drain of the fourth switch, the second end of the first capacitor is connected with the drain of the second switch and the source of the third switch, the two ends of the third switch are connected with the fifth switch in parallel, the two ends of the first switch are connected with the sixth switch in parallel, and the two ends of the fourth switch are connected with the seventh switch in parallel; the power supply is connected to the gate of the fourth switch through a small charge pump.
The small charge pump is composed of an eighth switch, a ninth switch, a tenth switch, an eleventh switch and a second capacitor, the eighth switch and the ninth switch are N-type switches, the tenth switch and the eleventh switch are P-type switches, a power supply is connected with the drain electrode of the eighth switch, the source electrode of the eighth switch is connected with the source electrode of the eleventh switch, the drain electrode of the eleventh switch is connected with the gate electrode of the fourth switch, the first end of the first capacitor is connected with the source electrode of the tenth switch, the drain electrode of the tenth switch is connected with the drain electrode of the ninth switch, the source electrode of the ninth switch is grounded, the first end of the second capacitor is connected with the source electrode of the eighth switch and the source electrode of the eleventh switch, and the second end of the second capacitor is connected with the drain electrode of the ninth switch and the drain electrode of the tenth switch.
Wherein the area of the fifth switch, the sixth switch and the seventh switch is very small, less than 1% of the chip area of the double charge pump. The areas of the eighth switch, the ninth switch, the tenth switch, and the eleventh switch are very small. Less than 1% of the chip area of a double charge pump.
The above-mentioned at least one technical scheme that this application adopted can reach following beneficial effect:
the double charge pump of 2P2N type of the present application can save 20% of area compared with the double charge pump of 3P1N type.
The 1P3N double charge pump of the present application can save 40% of area compared with the 3P1N double charge pump.
The 4N type double charge pump of the application can save 60% of area compared with the 3P1N type double charge pump.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic diagram of a conventional double charge pump.
Fig. 2 is a schematic diagram of a conventional double charge pump.
FIG. 3 is a schematic representation of a comparative example of the present application.
Fig. 4 is a schematic diagram of an embodiment of the present application.
FIG. 5 is a schematic representation of a comparative example of the present application.
Fig. 6 is a schematic diagram of an embodiment of the present application.
FIG. 7 is a schematic representation of a comparative example of the present application.
Fig. 8 is a schematic diagram of an embodiment of the present application.
The reference numerals are explained below:
1. the power supply comprises a power supply body, 2, a load, 3, a first capacitor, 4, a first switch, 5, a second switch, 6, a third switch, 7, a fourth switch, 8, a fifth switch, 9, a sixth switch, 10, a seventh switch, 11, an eighth switch, 12, a ninth switch, 13, a tenth switch, 14, an eleventh switch, 15 and a second capacitor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Comparative example 1: 2P2N type double charge pump
As shown in fig. 3, it is not feasible to simply replace P-type switch MPS3 with N-type switch MNS3 to implement switch S3, which is inoperable. The reason is that in the discharge state of the charge pump during start-up, the gate of the MNS3 needs to be larger than (VIN +0.7) V to turn it on to start conducting operation, while the output VOUT of the charge pump is still in the start-up phase of slowly rising from 0V. The charge pump is not able to start up and thus not working properly.
Example 1: 2P2N type double charge pump
As shown in fig. 4, a double charge pump is composed of a first capacitor 3, a first switch 4, a second switch 5, a third switch 6, a fourth switch 7, and a fifth switch 8. The first switch 4 and the fourth switch 7 are P-type switches, the second switch 5 and the third switch 6 are N-type switches, and the fifth switch 8 is a P-type switching tube with a very small area. The power supply 1 is connected with the source of the first switch 4, the drain of the first switch 4 is connected with the source of the fourth switch 7, and the drain of the fourth switch 7 is connected with the load 2. The power supply 1 is connected to the drain of the third switch 6, the source of the third switch 6 is connected to the drain of the second switch 5, and the source of the second switch 5 is grounded. A first end of the first capacitor 3 is connected with a drain of the first switch 4 and a source of the fourth switch 7, and a second end of the first capacitor 3 is connected with a drain of the second switch 5 and a source of the third switch 6. Two ends of the third switch 6 are connected with a fifth switch 8 in parallel, the source electrode of the fifth switch 8 is connected with the drain electrode of the third switch 6, and the drain electrode of the fifth switch 8 is connected with the source electrode of the third switch 6.
A fifth switch 8 is connected in parallel across the third switch 6 to assist in the establishment of a charging path in the discharging state of the charge pump during start-up. The voltage of the power supply 1 is VIN, the voltage of the load 2 is VOUT, and when VOUT is larger than VIN +0.7, the grid electrode of the third switch 6 can be connected to VOUT, and the third switch 6 can start to conduct work and takes a conduction path of most current. The fifth switch 8 only works when starting and is in a light load state when starting, so the area of the switch can be made small; under the same on-resistance, the chip area of the switch realized by the P type is 3 times that of the N type, so that the 2P2N switch structure can save 20% of the area compared with the 3P 1N.
Comparative example 2: 1P3N type double charge pump
As shown in fig. 5, it is not feasible to simply replace P-type switch MPS1 with N-type switch MNS1 to implement switch S1, and this charge pump is also inoperable. The reason is that the gate of MNS1 needs to be larger than (VIN +0.7) V to turn on the charge pump to start conducting operation when the charge pump is in the charging state during the start-up process, and the output VOUT of the charge pump is still in the start-up phase of slowly rising from 0V. The charge pump is not able to start up and thus not working properly.
Example 2: 1P3N type double charge pump
As shown in fig. 6, a double charge pump is composed of a first capacitor 3, a first switch 4, a second switch 5, a third switch 6, a fourth switch 7, a fifth switch 8, and a sixth switch 9. The first switch 4, the second switch 5 and the third switch 6 are N-type switches, the fourth switch 7 is a P-type switch, and the fifth switch 8 and the sixth switch 9 are P-type switching tubes with very small areas. The power supply 1 is connected with the drain of the first switch 4, the source of the first switch 4 is connected with the source of the fourth switch 7, and the drain of the fourth switch 7 is connected with the load 2. The power supply 1 is connected to the drain of the third switch 6, the source of the third switch 6 is connected to the drain of the second switch 5, and the source of the second switch 5 is grounded. A first end of the first capacitor 3 is connected with the source of the first switch 4 and the source of the fourth switch 7, and a second end of the first capacitor 3 is connected with the drain of the second switch 5 and the source of the third switch 6. Two ends of the third switch 6 are connected with a fifth switch 8 in parallel, the source electrode of the fifth switch 8 is connected with the drain electrode of the third switch 6, and the drain electrode of the fifth switch 8 is connected with the source electrode of the third switch 6; the two ends of the first switch 4 are connected in parallel with a sixth switch 9, the source of the sixth switch 9 is connected with the drain of the first switch 4, and the drain of the sixth switch 9 is connected with the source of the first switch 4.
The present embodiment connects the sixth switch 9 in parallel across the first switch 4 to help the charge pump establish the charging path in the charging state during the starting process. The voltage of the power source 1 is VIN, the voltage of the load 2 is VOUT, and when VOUT > VIN +0.7, the gate of the first switch 4 is connected to VOUT, and the first switch 4 starts to conduct and takes the conducting path of most of the current. The sixth switch 9 only starts to work when being started and is in a light load state when being started, so the area of the switch can be made small; under the same on-resistance, the chip area of the switch realized by the P type is 3 times that of the N type, so that the 1P3N switch structure can save 40% of the area compared with the 3P 1N.
Comparative example 3: 4N type double charge pump
As shown in fig. 7, it is not feasible to simply replace P-type switch MPS4 with N-type switch MNS4 to implement switch S4, and this charge pump is also inoperable.
Example 3: 4N type double charge pump
As shown in fig. 8, a double charge pump is composed of a first capacitor 3, a first switch 4, a second switch 5, a third switch 6, a fourth switch 7, a fifth switch 8, a sixth switch 9, a seventh switch 10, an eighth switch 11, a ninth switch 12, a tenth switch 13, an eleventh switch 14, and a second capacitor 15. The first switch 4, the second switch 5, the third switch 6 and the fourth switch 7 are N-type switches, the fifth switch 8, the sixth switch 9 and the seventh switch 10 are P-type switching tubes with very small areas, the eighth switch 11 and the ninth switch 12 are N-type switches, and the tenth switch 13 and the eleventh switch 14 are P-type switches. The power supply 1 is connected with the drain of the first switch 4, the source of the first switch 4 is connected with the drain of the fourth switch 7, and the source of the fourth switch 7 is connected with the load 2. The power supply 1 is connected to the drain of the third switch 6, the source of the third switch 6 is connected to the drain of the second switch 5, and the source of the second switch 5 is grounded. A first end of the first capacitor 3 is connected to the source of the first switch 4 and the drain of the fourth switch 7, and a second end of the first capacitor 3 is connected to the drain of the second switch 5 and the source of the third switch 6. Two ends of the third switch 6 are connected with a fifth switch 8 in parallel, the source electrode of the fifth switch 8 is connected with the drain electrode of the third switch 6, and the drain electrode of the fifth switch 8 is connected with the source electrode of the third switch 6; two ends of the first switch 4 are connected with a sixth switch 9 in parallel, the source electrode of the sixth switch 9 is connected with the drain electrode of the first switch 4, and the drain electrode of the sixth switch 9 is connected with the source electrode of the first switch 4; the two ends of the fourth switch 7 are connected in parallel with a seventh switch 10, the source of the seventh switch 10 is connected with the drain of the fourth switch 7, and the drain of the seventh switch 10 is connected with the source of the fourth switch 7. The power supply 1 is connected to the drain of the eighth switch 11, the source of the eighth switch 11 is connected to the source of the eleventh switch 14, and the drain of the eleventh switch 14 is connected to the gate of the fourth switch 7. A first end of the first capacitor 3 is connected to a source of the tenth switch 13, a drain of the tenth switch 13 is connected to a drain of the ninth switch 12, and a source of the ninth switch 12 is grounded. A first end of the second capacitor 15 is connected to the source of the eighth switch 11 and the source of the eleventh switch 14, and a second end of the second capacitor 15 is connected to the drain of the ninth switch 12 and the drain of the tenth switch 13.
In this embodiment, a charge pump is designed in the chip, and the charge pump outputs (VOUT + VIN) to the gate of the fourth switch 7, so that the problem of turning on the fourth switch 7 can be solved, and the charge pump can work normally. Since the gate driving the fourth switch 7 does not need a large current, the second capacitor 15 of this charge pump does not need to be large, and can be implemented inside the chip, and the eighth switch 11, the ninth switch 12, the tenth switch 13, and the eleventh switch 14 are also small in area. Under the same on-resistance, the chip area of the switch realized by the P type is 3 times of that of the N type, so that the full N type 4N switch structure can save 60% of the area compared with the 3P 1N.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims (10)

1. A double charge pump is characterized in that the double charge pump is composed of a first capacitor, a first switch, a second switch, a third switch, a fourth switch and a fifth switch;
the first switch and the fourth switch are P-type switches, the second switch and the third switch are N-type switches, and the fifth switch is a P-type switching tube with a very small area;
the power supply is connected with the source electrode of the first switch, the drain electrode of the first switch is connected with the source electrode of the fourth switch, the drain electrode of the fourth switch is connected with the load, the power supply is connected with the drain electrode of the third switch, the source electrode of the third switch is connected with the drain electrode of the second switch, the source electrode of the second switch is grounded, the first end of the first capacitor is connected with the drain electrode of the first switch and the source electrode of the fourth switch, the second end of the first capacitor is connected with the drain electrode of the second switch and the source electrode of the third switch, the two ends of the third switch are connected with the fifth switch in parallel, the source electrode of the fifth switch is connected with the drain electrode of the third switch, and the drain electrode of the fifth switch is connected.
2. The double charge pump of claim 1, wherein an area of the fifth switch is less than 1% of a chip area of the double charge pump.
3. A double charge pump is characterized by comprising a first capacitor, a first switch, a second switch, a third switch, a fourth switch, a fifth switch and a sixth switch;
the first switch, the second switch and the third switch are N-type switches, the fourth switch is a P-type switch, and the fifth switch and the sixth switch are P-type switching tubes with very small areas;
the power supply is connected with the drain electrode of the first switch, the source electrode of the first switch is connected with the source electrode of the fourth switch, the drain electrode of the fourth switch is connected with the load, the power supply is connected with the drain electrode of the third switch, the source electrode of the third switch is connected with the drain electrode of the second switch, the source electrode of the second switch is grounded, the first end of the first capacitor is connected with the source electrode of the first switch and the source electrode of the fourth switch, the second end of the first capacitor is connected with the drain electrode of the second switch and the source electrode of the third switch, the two ends of the third switch are connected with the fifth switch in parallel, the source electrode of the fifth switch is connected with the drain electrode of the third switch, the drain electrode of the fifth switch is connected with the source electrode of the third switch, the two ends of the first switch are connected with the sixth switch in parallel, the source electrode of the sixth switch is connected with the drain electrode.
4. The double charge pump of claim 3, wherein an area of the fifth switch and the sixth switch is less than 1% of a chip area of the double charge pump.
5. A double charge pump is characterized in that the double charge pump consists of a first capacitor, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a sixth switch, a seventh switch and a small charge pump;
the first switch, the second switch, the third switch and the fourth switch are N-type switches, and the fifth switch, the sixth switch and the seventh switch are P-type switching tubes;
the power supply is connected with the drain electrode of the first switch, the source electrode of the first switch is connected with the drain electrode of the fourth switch, the source electrode of the fourth switch is connected with the load, the power supply is connected with the drain electrode of the third switch, the source electrode of the third switch is connected with the drain electrode of the second switch, the source electrode of the second switch is grounded, the first end of the first capacitor is connected with the source electrode of the first switch and the drain electrode of the fourth switch, the second end of the first capacitor is connected with the drain electrode of the second switch and the source electrode of the third switch, the two ends of the third switch are connected with the fifth switch in parallel, the source electrode of the fifth switch is connected with the drain electrode of the third switch, the drain electrode of the fifth switch is connected with the source electrode of the third switch, the two ends of the first switch are connected with the sixth switch in parallel, the source electrode of the sixth switch is connected with the drain electrode of the first switch, the drain electrode of the fourth switch is connected with the seventh switch in parallel, the source electrode, the drain electrode of the seventh switch is connected with the source electrode of the fourth switch;
the power supply is connected to the gate of the fourth switch through a small charge pump.
6. The double charge pump of claim 5, wherein the small charge pump is composed of an eighth switch, a ninth switch, a tenth switch, an eleventh switch and a second capacitor, the eighth switch and the ninth switch are N-type switches, the tenth switch and the eleventh switch are P-type switches, a power supply is connected to a drain of the eighth switch, a source of the eighth switch is connected to a source of the eleventh switch, a drain of the eleventh switch is connected to a gate of the fourth switch, a first end of the first capacitor is connected to a source of the tenth switch, a drain of the tenth switch is connected to a drain of the ninth switch, a source of the ninth switch is grounded, a first end of the second capacitor is connected to a source of the eighth switch and a source of the eleventh switch, and a second end of the second capacitor is connected to a drain of the ninth switch and a drain of the tenth switch.
7. The double charge pump of claim 5, wherein the areas of the fifth switch, the sixth switch, and the seventh switch are very small.
8. The double charge pump of claim 5, wherein the area of the fifth switch, the sixth switch, and the seventh switch is less than 1% of the chip area of the double charge pump.
9. The double charge pump of claim 6, wherein the eighth switch, the ninth switch, the tenth switch, and the eleventh switch are very small in area.
10. The double charge pump of claim 6, wherein an area of the eighth switch, the ninth switch, the tenth switch, and the eleventh switch is less than 1% of a chip area of the double charge pump.
CN202010207163.2A 2020-03-23 2020-03-23 Double charge pump Active CN111245221B (en)

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CN101471601A (en) * 2007-12-24 2009-07-01 矽创电子股份有限公司 Electric charge assist pump for adding power efficiency and output voltage
CN201490880U (en) * 2009-05-31 2010-05-26 Bcd半导体制造有限公司 Soft-start circuit of electric-charge pump
CN102754321A (en) * 2009-12-01 2012-10-24 天工方案公司 Continuously variable switched capacitor dc-dc voltage converter
CN102769379A (en) * 2012-07-23 2012-11-07 孙坚 Positive and negative voltage generation circuit applicable to silicon-on-insulator (SOI) process
US9209684B2 (en) * 2012-08-31 2015-12-08 Microelectronics Research And Development Radiation hardened charge pump

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