CN111244588B - Dual-channel microwave photon filter based on light injection technology and filtering method - Google Patents
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Abstract
The invention provides a double-channel microwave photon filter based on a light injection technology and a filtering method, wherein the double-channel microwave photon filter based on the light injection technology comprises the following components: the device comprises a main semiconductor laser, a double-output electro-optic modulator, a first optical circulator, a first slave semiconductor laser, a second optical circulator, a second slave semiconductor laser and a balance detector; the output end of the main semiconductor laser is connected with the optical input end of the double-output electro-optical modulator; the output ends of the double-output electro-optical modulator are respectively connected with a first interface of the first optical circulator and a first interface of the second optical circulator; the second interface of the first optical circulator is connected with the first slave semiconductor laser, and the third interface of the first optical circulator is connected with the first input interface of the balance detector; and a second interface of the second optical circulator is connected with the second slave semiconductor laser, and a third interface of the second optical circulator is connected with a second input interface of the balance detector. The invention can realize the dual-channel broadband tunable microwave photon filtering.
Description
Technical Field
The invention relates to the technical field of microwave photons, in particular to a dual-channel microwave photon filter based on a light injection technology and a filtering method.
Background
With the progress and development of scientific technology, the application of microwave technology has penetrated into many aspects of scientific fields, such as wireless communication, global positioning system, computer engineering, radar detection, satellite communication, and the like. The filter is an important functional unit for microwave signal processing, and has important application value in the fields of radar, wireless communication, mobile communication and the like. However, the conventional electrical filter has great limitations in tuning of multi-channel filtering frequency, changing of bandwidth and the like, so that the application of the conventional electrical filter in the high-frequency field is greatly limited. In addition, as the communication capacity in microwave systems increases, the requirements for the rate and bandwidth of signal processing become higher and higher, which poses a greater challenge to the performance of conventional multi-channel electrical filters.
Therefore, under the background condition, with the development of microwave photonic technology, a microwave photonic filter is developed, the microwave photonic filter is a photonic system which is specially designed to realize filtering processing of microwave signals, and the microwave photonic filter is generally used for carrying out channel selection on signals, eliminating interference and improving signal-to-noise ratio. Compared with the traditional electric domain microwave filter, the microwave photon filter can process microwave signals in an optical domain, suppress noise, filter clutter signals and acquire microwave signals of a required frequency band, so that the signal frequency selection function is realized.
The existing microwave photon filter can be realized by an optical delay line structure, but the inherent periodic spectrum effect in the finite impulse response causes the low spectrum utilization rate and can only utilize the free spectrum region. In addition, the microwave photonic filter based on the multi-tap delay line structure has relatively poor adjustable flexibility, and the application of the microwave photonic filter in a communication system is limited.
In addition, the microwave photonic filter realized based on the wide-spectrum light source spectrum cutting technology and the phase modulation and intensity modulation technology is obviously limited by the external physical environment, is not beneficial to integration and has higher cost, and is not suitable for being widely applied in a system.
In the prior art [1] (Wangzhe Li, Ming Li, and Jianping Yao, "a Narrow-wavelength and Frequency-Tunable Microwave Photonic Filter Based on Phase-Modulation to Intensity-Modulation Conversion Using a Phase-Shifted Fiber Bragg Grating," IEEE Transactions on Microwave Theory and Techniques, vol.60, No.5, pp.1287-1296, may.2012), the Phase shift of the Phase shift to Intensity Modulation is achieved by Using a Fiber Bragg Grating, and a Frequency-Tunable Narrow-bandwidth Microwave Filter is obtained by adjusting the wavelength of the optical carrier, but is affected by the fixed position of the Grating notch and the notch bandwidth, resulting in a poor tunability of the Passband bandwidth of the Filter, and in addition, the insertion loss of the Filter is large, limiting its application in the communication field.
In the prior art [2] (Liang Guo, Jiejun Zhang, Xiangfei Chen and Jianping Yao, "Microwave Photonic Filter With Two independent Tunable substrates Using a Phase Modulator and an Equivalent Phase-Shifted Fiber Bragg Grating," IEEE Transactions on Microwave Theory and Techniques, vol.62, No.2, pp.380-387, Feb.2014), a Phase Modulator and an Equivalent Phase-shift Fiber Bragg Grating are adopted, and the conversion from Phase modulation to intensity modulation is realized in Two channels respectively, thereby obtaining Two dual-channel Microwave Photonic filters With Independently Tunable Passbands. However, the frequency interval between the two channels of the microwave photonic filter based on the scheme is small, so that the center frequencies of the two passbands are close, and the frequency interval between the two passbands is poor in adjustability.
Therefore, in order to meet the requirements of the fields of modern military affairs, information communication and the like on the microwave signal processing technology, a dual-channel microwave photon band-pass filter with high speed, high frequency band and tunable broadband is developed, and the problem to be solved in the field is urgently needed.
Disclosure of Invention
The invention mainly solves the technical problems of poor passband center frequency tunability, large insertion loss, high cost, small frequency interval between passbands and poor frequency interval tunability in the prior art, and provides a dual-channel microwave photon filter based on an optical injection technology and a filtering method.
The invention provides a dual-channel microwave photon filter based on a light injection technology, which comprises: the device comprises a main semiconductor laser, a double-output electro-optic modulator, a first optical circulator, a first slave semiconductor laser, a second optical circulator, a second slave semiconductor laser and a balance detector;
the output end of the main semiconductor laser is connected with the optical input end of the double-output electro-optical modulator; the radio frequency information input end of the dual-output electro-optical modulator is connected with a microwave signal to be processed; the output ends of the dual-output electro-optical modulator are respectively connected with a first interface of the first optical circulator and a first interface of the second optical circulator;
the second interface of the first optical circulator is connected with the first slave semiconductor laser, and the third interface of the first optical circulator is connected with the first input interface of the balance detector;
a second interface of the second optical circulator is connected with a second slave semiconductor laser, and a third interface of the second optical circulator is connected with a second input interface of the balance detector;
and the output port of the balance detector is externally connected with detection equipment.
Wherein the first slave semiconductor laser and the second slave semiconductor laser have different frequencies and are lower than the output frequency of the master semiconductor laser.
Preferably, a first polarization controller is arranged between the output end of the dual-output electro-optical modulator and the first optical circulator.
Preferably, a second polarization controller is arranged between the output end of the dual-output electro-optical modulator and the second optical circulator.
Preferably, the output wavelength of the main semiconductor laser is 1535-1575 nm.
Preferably, the output wavelengths of the first slave semiconductor laser and the second slave semiconductor laser are both 1530-1610 nm.
Preferably, the bandwidth of the dual-output electro-optical modulator is 40 GHz.
Preferably, the bandwidth of the balanced detector is 45 GHz.
Correspondingly, the invention provides a dual-channel microwave photon filtering method based on a light injection technology, which comprises the following steps:
the microwave signal to be processed is modulated by a double-output electro-optical modulator and then loaded on an optical carrier output by a main semiconductor laser, and a first path of optical signal and a second path of optical signal which are the same and comprise sideband signals and the optical carrier are obtained;
injecting the first path of optical signal into a first slave semiconductor laser through a first optical circulator, wherein the first slave semiconductor laser amplifies sideband signals in a first preset locking region in the first path of optical signal, and the optical power of sideband signals of other frequencies is unchanged, so as to obtain the amplified first path of optical signal; simultaneously, injecting the second path of optical signal into a second slave semiconductor laser through a second optical circulator; the second slave semiconductor laser device amplifies sideband signals in a second preset locking area in the second path of optical signals, and the optical power of sideband signals of other frequencies is unchanged, so that the second path of optical signals after amplification is obtained;
and respectively inputting the amplified first path of optical signal and the amplified second path of optical signal into a first input interface and a second input interface of a balance detector, and filtering the rest sideband signals through the differential balance detection function of the balance detector to realize the output of the filtered microwave signal.
The dual-channel microwave photon filter based on the light injection technology and the filtering method can realize frequency selection and band-pass filtering processing of microwave signals in an optical domain and can realize a dual-channel filtering function of high-frequency microwave signals. The dual-output electro-optical modulator is adopted to modulate a received microwave signal onto an optical carrier output by a main semiconductor laser to generate two paths of signals containing sidebands and the optical carrier, the signals are respectively injected into two semiconductor lasers which have different free-running frequencies and do not contain an optical isolator through corresponding circulators, the wavelength selection amplification characteristic and the nonlinear effect of the light injected into the semiconductor lasers are utilized to realize the dual-channel filtering frequency selection function of amplifying the power of signals with corresponding wavelengths (frequencies), and finally, the output of the frequency selection signals is realized after the photoelectric conversion of a balanced detector, and the signals with other frequencies are further filtered. The filter can further change the magnitude of the red shift quantity of the resonant cavity of the slave semiconductor laser by tuning the detuning frequency and the light injection coefficient between the master semiconductor laser and the slave semiconductor laser, thereby realizing dual-channel broadband tunable filtering, greatly improving the flexibility and the frequency tunable range of the system, and overcoming the limitations of small bandwidth, low frequency and large loss of the traditional electric filter. The invention has simple structure and good flexibility, and can realize the band-pass filtering function of high out-of-band rejection ratio of the small-power microwave signal received by the antenna. The invention avoids the problem of low frequency spectrum utilization rate of the microwave photon filter of the traditional optical delay line structure.
Drawings
Fig. 1 is a block diagram of a dual-channel microwave photonic filter based on a light injection technique according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an intensity modulated output optical carrier microwave signal;
fig. 3 is a schematic spectrum diagram of a signal after light injection locking amplification output, wherein: (a) a first slave semiconductor laser output; (b) a second slave semiconductor laser output;
fig. 4 is a schematic diagram of a filtered microwave signal obtained after photoelectric conversion by a balanced detector.
Fig. 5 is a flowchart of an implementation of a dual-channel microwave photon filtering method based on a light injection technique according to a second embodiment of the present invention.
Detailed Description
In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some but not all of the relevant aspects of the present invention are shown in the drawings.
Example one
Fig. 1 is a block diagram of a dual-channel microwave photonic filter based on a light injection technique according to an embodiment of the present invention. As shown in fig. 1, the dual-channel microwave photonic filter based on the light injection technology provided by the embodiment of the present invention includes: the device comprises a main semiconductor laser, a double-output electro-optic modulator, a first optical circulator, a first slave semiconductor laser, a second optical circulator, a second slave semiconductor laser and a balance detector;
the output end of the main semiconductor laser is connected with the optical input end of the double-output electro-optical modulator; the radio frequency information input end of the dual-output electro-optical modulator is connected with a microwave signal to be processed; the output ends of the dual-output electro-optical modulator are respectively connected with a first interface of the first optical circulator and a first interface of the second optical circulator;
the second interface of the first optical circulator is connected with the first slave semiconductor laser, and the third interface of the first optical circulator is connected with the first input interface of the balance detector; a second interface of the second optical circulator is connected with a second slave semiconductor laser, and a third interface of the second optical circulator is connected with a second input interface of the balance detector; and the output port of the balance detector is externally connected with detection equipment. The detection devices are for example: and the vector network analyzer and the spectrum analyzer are used for carrying out subsequent processing and analysis. In the embodiment, the influence of noise and out-of-band microwave signals is reduced by adopting the balanced differential detector, and the improvement of the out-of-band rejection ratio is realized.
Wherein the first slave semiconductor laser and the second slave semiconductor laser have different frequencies and are lower than the output frequency of the master semiconductor laser. The free-running frequency of the first slave semiconductor laser is represented by f1The free-running frequency of the second slave semiconductor laser is represented by f2And f is2And f2Different, all located at the optical carrier frequency f of the output of the main semiconductor laser0To the left of (c). Because the free running frequencies of the first slave semiconductor laser and the second slave semiconductor laser are different, the frequencies of the preset locking regions of the first slave semiconductor laser and the second slave semiconductor laser are also different, and therefore the two paths respectively lock and amplify sideband microwave signals with different frequencies.
And a first polarization controller is arranged between the output end of the dual-output electro-optical modulator and the first optical circulator. And a second polarization controller is arranged between the output end of the dual-output electro-optical modulator and the second optical circulator.
Specifically, the output wavelength of the main semiconductor laser is 1535-1575nm, and the typical value is 1550 nm; the bandwidth of the dual-output electro-optical modulator is 40 GHz; the output wavelengths of the first slave semiconductor laser and the second slave semiconductor laser are 1530-1610nm and 1550nm as a typical value. The bandwidth of the balanced detector is 45 GHz.
In the above scheme, the components are connected in turn by optical fibers or cables. The method comprises the steps that a received microwave signal to be processed containing a plurality of frequencies is input into a dual-output electro-optical modulator through a radio frequency information input end of the dual-output electro-optical modulator through an antenna, and the received microwave signal is loaded into a main semiconductor laser after being subjected to electro-optical modulation of the dual-output electro-optical modulator, wherein the output frequency of the main semiconductor laser is f0And outputs two paths of optical carrier microwave signals through the output end of the dual-output electro-optical modulator, and a specific output spectrogram of the optical carrier is shown in fig. 2.
The first path of optical signal enters the first slave semiconductor laser through the first optical circulator and is amplified through the wavelength selection function of the first slave semiconductor laser, so that the frequency f is realized0-f3The specific spectrum diagram of the sideband signal is shown in fig. 3 (a); the second path of optical signal enters a second slave semiconductor laser through a second optical circulator and is amplified through the wavelength selection action of the second slave semiconductor laser to realize the frequency f0-f4The specific spectrum diagram of the sideband signal of (a) is shown in fig. 3 (b); wherein f is0Representing the optical carrier frequency of the output of the main semiconductor laser, f1Representing the free running frequency, f, of the first semiconductor laser2Representing the free running frequency, f, of the second semiconductor laser3Representing the frequency f of the first path of microwave signal after filtering4And the frequency of the filtered second path of microwave signal is represented. Therefore, the optical injection technology is used for realizing the frequency-selective amplification of sideband signals of two different frequencies of the optical signal, and the dual-channel frequency-selective output is realized after the differential balance detection of the balance detector, so that the band-pass filtering function is completed, and the spectrogram of the microwave signal output after the filtering is shown in fig. 4.
After two optical signals are injected into the corresponding slave semiconductor laser, the output frequencies of the two optical signals respectively generate delta F due to the influence of the nonlinear effect in the process of injecting the light into the semiconductor laser1And Δ F2The center frequency of the first predetermined lock zone is f1-ΔF1Second preset lockCenter frequency f of the region2-ΔF2. At a central frequency f1-ΔF1Near and at the center frequency f2-ΔF2The nearby sideband signals are amplified due to the wavelength selective amplification characteristic caused by the light injection locking semiconductor laser, meanwhile, the optical power of the sideband signals of other frequencies is not changed, and finally, the influence of noise and other sidebands is further filtered after differential balanced detection of the balanced differential detector, so that the dual-channel filtering function with high out-of-band rejection ratio is realized. In this embodiment, under the influence of the wavelength red shift from the semiconductor laser caused by the nonlinear effect during the light injection into the semiconductor laser and the influence of the wavelength selective amplification characteristic under the condition that the light is injected into the locked semiconductor laser, the sideband signal in the locked region near the resonance peak after the wavelength red shift from the semiconductor laser will be selectively amplified, while the amplitude of the sideband signal of other frequencies will not change.
In this embodiment, the ratio between the output optical power of the master semiconductor laser and the optical power of the slave semiconductor laser when the slave semiconductor laser freely operates, that is, the injection coefficient ratio between the master semiconductor laser and the slave semiconductor laser is changed, so that the frequency offset Δ F between the master semiconductor laser and the slave semiconductor laser can be changed1And Δ F2To achieve amplification of sideband signals of different frequencies. Therefore, the dual-channel reconfigurable broadband tunable microwave photon filtering function can be realized by tuning the light injection coefficient.
Because the free running frequencies of the first slave semiconductor laser and the second slave semiconductor laser are different, the frequencies of the locking regions of the first slave semiconductor laser and the second slave semiconductor laser are also different, and therefore the two paths respectively perform locking amplification on sideband microwave signals with different frequencies. The influence of noise and out-of-band microwave signals is reduced by adopting the balanced differential detector, and the improvement of the out-of-band rejection ratio is realized.
Example two
Fig. 5 is a flowchart of an implementation of a dual-channel microwave photon filtering method based on a light injection technique according to a second embodiment of the present invention. As shown in fig. 5, the dual-channel microwave photon filtering method based on the light injection technology provided by the embodiment of the present invention includes the following processes:
the microwave signal to be processed is modulated by a double-output electro-optical modulator and then loaded on an optical carrier output by a main semiconductor laser, and a first path of optical signal and a second path of optical signal which are the same and comprise sideband signals and the optical carrier are obtained;
injecting the first path of optical signal into a first slave semiconductor laser through a first optical circulator, wherein the first slave semiconductor laser amplifies sideband signals in a first preset locking region in the first path of optical signal, and the optical power of sideband signals of other frequencies is unchanged, so as to obtain the amplified first path of optical signal;
simultaneously, injecting the second path of optical signal into a second slave semiconductor laser through a second optical circulator; the second slave semiconductor laser device amplifies sideband signals in a second preset locking area in the second path of optical signals, and the optical power of sideband signals of other frequencies is unchanged, so that the second path of optical signals after amplification is obtained;
and respectively inputting the amplified first path of optical signal and the amplified second path of optical signal into a first input interface and a second input interface of a balance detector, and filtering the rest sideband signals through the differential balance detection function of the balance detector to realize the output of the filtered microwave signal.
In this embodiment, the ratio between the output optical power of the master semiconductor laser and the optical power of the slave semiconductor laser when the slave semiconductor laser freely operates, that is, the injection coefficient ratio between the master semiconductor laser and the slave semiconductor laser is changed, so that the frequency offset Δ F between the master semiconductor laser and the slave semiconductor laser can be changed1And Δ F2To achieve amplification of sideband signals of different frequencies. Therefore, the dual-channel reconfigurable broadband tunable microwave photon filtering function can be realized by tuning the light injection coefficient.
The two-channel microwave photon filtering method based on the light injection technology provided by the embodiment of the invention can realize the functions of frequency selection and two-channel band-pass filtering of high-frequency microwave signals in the optical domain. The dual-output electro-optical modulator is used for modulating a received microwave signal to an optical carrier output by a main semiconductor laser to generate two paths of optical carrier microwave signals containing sidebands and the optical carrier, the signals are respectively injected into two semiconductor lasers which have different free-running frequencies and do not contain optical isolators through corresponding circulators, the wavelength selective amplification characteristic and the nonlinear effect of the semiconductor lasers are utilized to realize the dual-channel filtering frequency selection function of amplifying the power of signals with corresponding wavelengths (frequencies), and finally, the output of the frequency selection signals is realized after differential balance detection of a balance detector, and the signals with other frequencies are further filtered. The filter can further change the magnitude of the red shift quantity of the resonant cavity of the slave semiconductor laser by tuning the detuning frequency and the light injection coefficient between the master semiconductor laser and the slave semiconductor laser, thereby realizing the double-channel broadband tunable filtering function.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: modifications of the technical solutions described in the embodiments or equivalent replacements of some or all technical features may be made without departing from the scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. A dual-channel microwave photonic filter based on light injection technology, comprising: the device comprises a main semiconductor laser, a double-output electro-optic modulator, a first optical circulator, a first slave semiconductor laser, a second optical circulator, a second slave semiconductor laser and a balance detector;
the output end of the main semiconductor laser is connected with the optical input end of the double-output electro-optical modulator; the radio frequency information input end of the dual-output electro-optical modulator is connected with a microwave signal to be processed; the output ends of the dual-output electro-optical modulator are respectively connected with a first interface of the first optical circulator and a first interface of the second optical circulator; a first polarization controller is arranged between the output end of the dual-output electro-optical modulator and the first optical circulator; a second polarization controller is arranged between the output end of the double-output electro-optical modulator and the second optical circulator;
the second interface of the first optical circulator is connected with the first slave semiconductor laser, and the third interface of the first optical circulator is connected with the first input interface of the balance detector;
a second interface of the second optical circulator is connected with a second slave semiconductor laser, and a third interface of the second optical circulator is connected with a second input interface of the balance detector;
the output port of the balance detector is externally connected with detection equipment;
wherein the first slave semiconductor laser and the second slave semiconductor laser have different frequencies and are lower than the output frequency of the master semiconductor laser.
2. The dual-channel microwave photonic filter based on the light injection technology as claimed in claim 1, wherein the output wavelength of the main semiconductor laser is 1535-1575 nm.
3. The dual-channel microwave photonic filter based on the light injection technology as claimed in claim 1 or 2, wherein the output wavelengths of the first slave semiconductor laser and the second slave semiconductor laser are both 1530-1610 nm.
4. The dual channel microwave photonic filter based on light injection technique according to claim 1, characterized in that the bandwidth of the dual output electro-optical modulator is 40 GHz.
5. The dual-channel microwave photonic filter based on the light injection technique according to claim 1 or 4, characterized in that the bandwidth of the balanced detector is 45 GHz.
6. A dual-channel microwave photon filtering method based on a light injection technology is characterized by comprising the following processes:
the microwave signal to be processed is modulated by a double-output electro-optical modulator and then loaded on an optical carrier output by a main semiconductor laser, and a first path of optical signal and a second path of optical signal which are the same and comprise sideband signals and the optical carrier are obtained;
injecting the first path of optical signal into a first slave semiconductor laser through a first optical circulator, wherein the first slave semiconductor laser amplifies sideband signals in a first preset locking region in the first path of optical signal, and the optical power of sideband signals of other frequencies is unchanged, so as to obtain the amplified first path of optical signal; simultaneously, injecting the second path of optical signal into a second slave semiconductor laser through a second optical circulator; the second slave semiconductor laser device amplifies sideband signals in a second preset locking area in the second path of optical signals, and the optical power of sideband signals of other frequencies is unchanged, so that the second path of optical signals after amplification is obtained;
and respectively inputting the amplified first path of optical signal and the amplified second path of optical signal into a first input interface and a second input interface of a balance detector, and filtering the rest sideband signals through the differential balance detection function of the balance detector to realize the output of the filtered microwave signal.
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