CN111229335B - Method for manufacturing optical waveguide microfluid chip - Google Patents
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- CN111229335B CN111229335B CN202010052131.XA CN202010052131A CN111229335B CN 111229335 B CN111229335 B CN 111229335B CN 202010052131 A CN202010052131 A CN 202010052131A CN 111229335 B CN111229335 B CN 111229335B
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/12—Specific details about materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
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- B01L2300/168—Specific optical properties, e.g. reflective coatings
Abstract
The invention provides a manufacturing method of an optical waveguide microfluid chip, which comprises the steps of providing a substrate, forming a sacrificial layer on the substrate, and forming a lower cladding on the sacrificial layer; forming a waveguide layer on the lower cladding layer, wherein the waveguide layer is made of silicon nitride material; forming an optical waveguide with the waveguide layer; forming an upper cladding layer on the waveguide layer; forming a micro-channel, wherein the micro-channel penetrates through the upper cladding and the waveguide layer from top to bottom and extends into the lower cladding; the sacrificial layer is removed to strip the upper cladding layer, the waveguide layer, and the lower cladding layer from the substrate. Has the advantages that: the silicon nitride film with adjustable optical performance is deposited on the flexible substrate, the application range and the application form of taking the silicon nitride as an optical device material are expanded, a chip-level optical detection system is produced, the traditional table-type or even large-scale optical system is reduced to the chip size, the equal or even more excellent analysis performance is ensured, the high-flux chip-level optical detection and analysis integrated system of a biological sample under the micro-nano scale is realized, and the system cost is greatly reduced.
Description
Technical Field
The invention relates to a manufacturing method of an optical waveguide microfluid chip, in particular to a manufacturing method of an optical waveguide microfluid biological detection chip.
Background
In modern biochemical analysis procedures, high-throughput detection devices have been widely used. Most of these devices use biochips based on microfluidic technology or microwell arrays, loaded in high performance optical systems, to perform analysis of biological samples of different sizes, such as nucleic acids, proteins, viruses, bacteria, cells, etc. The design of these optical systems is usually based on complex geometric optics, which is bulky, costly, requires optical alignment, and is costly to maintain.
In the precise medical age, miniaturized, high-performance, low-cost and mobile integrated analysis systems are of great concern. In particular, the lab on chip concept has advanced a lot of progress in manipulating a biological sample based on a microfluidic technology after decades of development, but a real lab on chip system still lacks an integrated system for chip-level on-chip optical detection and analysis of a high-throughput biological sample on a micro-nano scale.
Meanwhile, materials such as optical silicon nitride films and the like are deposited on the high polymer film, the integrated optical device taking SiN as the waveguide is separated from the silicon or glass substrate, and the polymer has certain ductility, so that the application range of the integrated optical device taking SiN and the like as the waveguide is greatly enlarged.
The lower the deposition temperature is, the better the deposition temperature is, in order to not destroy the molecular structure of the polymer, when the film is deposited on the high molecular polymer, the growth temperature of the SiN film which is the mainstream at present is about 400 ℃, and is still too high.
Disclosure of Invention
The device aims to solve a series of new requirements of miniaturization, mobility, integration and the like of the modern biochemical analysis instrument which is large in size and high in cost and meets the requirements of the precise medical era. The chip-level optical detection and analysis system is produced by an integrated circuit mass production process, the function of the traditional optical system is realized by integrating an optical device or an on-chip optical device, the traditional desktop or even large-scale optical system can be reduced to the chip size, the equal or even more excellent analysis performance is ensured, the high-flux chip-level optical detection and analysis integrated system of the biological sample under the micro-nano scale is realized, and the system cost is greatly reduced.
The invention provides a manufacturing method of an optical waveguide microfluid chip, which comprises the following steps:
step 1000: providing a substrate, forming a sacrificial layer on the substrate, and forming a lower cladding layer made of a high polymer material with the thickness of 15-30 mu m on the sacrificial layer;
step 2000: forming a waveguide layer on the lower cladding layer, the waveguide layer being a silicon nitride material;
step 3000: forming an optical waveguide with the waveguide layer;
step 4000: forming an upper cladding layer of a high polymer material with the thickness of 15-30 mu m on the waveguide layer;
step 5000: forming a micro-channel, wherein the micro-channel penetrates through the upper cladding and the waveguide layer from top to bottom and extends into the lower cladding;
step 6000: removing the sacrificial layer to strip the upper cladding layer, the waveguide layer, and the lower cladding layer from the substrate;
the optical waveguide is used for guiding light into the micro-channel along the horizontal direction, the width of the micro-channel is 10-100 mu m, and the micro-channel does not penetrate through the lower cladding; the corrosion selectivity of the sacrificial layer is higher than that of the upper cladding layer, the waveguide layer or the lower cladding layer, and the material of the sacrificial layer is metal, polymer or oxide.
Preferably, in step 2000, the waveguide layer is formed by inductively coupled plasma chemical vapor deposition at a deposition temperature of 25-150 ℃ with introduction of a reaction carrier gas including a silicon gas source and a nitrogen gas source.
Preferably, in step 3000, the thickness of the waveguide layer is 150-.
Preferably, in step 2000, forming the waveguide layer with a thickness of 150-1000nm on the lower cladding layer;
Preferably, in step 2000, forming the waveguide layer with a thickness of 150-1000nm on the lower cladding layer;
Preferably, in step 1000, the lower cladding layer is formed on the substrate by using a chemical vapor deposition method or a thermal oxidation method.
Preferably, in step 4000, the polymeric material is spin coated on the waveguide layer.
Preferably, step 5000 further comprises a process of forming a mask with the upper cladding layer: soft-baking the upper cladding, carrying out local exposure on a position on the upper cladding where a micro-channel is scheduled to be formed, and forming a preparation channel which penetrates through the upper cladding and has the width of 10-100 mu m after hard baking and developing;
and etching the waveguide layer and part of the lower cladding layer below the preparation flow channel by using the upper cladding layer as a mask by using a reactive ion etching method to form the micro-flow channel.
Preferably, the polymer material is SU-8 resin, polyimide, polydimethylsilane, polyethylene or benzocyclobutene.
Preferably, in step 6000, the sacrificial layer is removed using wet etching, dry vapor etching or reactive ion etching.
The invention provides a manufacturing method of an optical waveguide microfluid chip, which is characterized in that a silicon nitride film with adjustable optical performance is deposited on a flexible substrate at low temperature, the application range and the form of SiN optical device materials are expanded, the functions of a traditional optical system are realized by integrating optical devices or on-chip optical devices, the size of the traditional table-type or even large-scale optical system is reduced to the size of the chip, the equal or even more excellent analysis performance is ensured, the high-flux chip-level optical detection and analysis integrated system of a biological sample under the micro-nano scale is realized, and the system cost is greatly reduced.
Drawings
FIGS. 1 a-e are flow diagrams illustrating the fabrication of an optical waveguide microfluidic chip according to the present invention;
FIGS. 2 a-f are the manufacturing processes of the coupled optical waveguide microfluidic chip of the present invention;
FIG. 3 is a top view of FIG. 1;
FIG. 4 is a top view of the sheet optical waveguide of FIG. 1;
FIG. 5 is a flow chart of a method of fabricating an optical waveguide microfluidic chip according to the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
In the drawings, the dimensional ratios of layers and regions are not actual ratios for the convenience of description. When a layer (or film) is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In addition, when a layer is referred to as being "under" another layer, it can be directly under, and one or more intervening layers may also be present. In addition, when a layer is referred to as being between two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. Like reference numerals refer to like elements throughout. In addition, when two components are referred to as being "connected," they include physical connections, including, but not limited to, electrical connections, contact connections, and wireless signal connections, unless the specification expressly dictates otherwise.
The invention provides a method for manufacturing a horizontal optical waveguide and microfluidic channel integrated chip, which is used for quickly constructing a chip-level on-chip optical detection chip of a high-flux biological sample under a micro-nano scale. Here, the horizontal optical waveguide means an optical waveguide for guiding light into a microchannel in a horizontal direction.
As shown in fig. 1 to 5, a method for manufacturing an optical waveguide microfluidic chip includes:
step 1000: providing a substrate 11, forming a sacrificial layer 10 on the substrate 11, and forming a lower cladding 141 made of a high polymer material with the thickness of 15-30 μm on the sacrificial layer 10;
step 2000: forming a waveguide 13 on the lower cladding layer 141, the waveguide layer 13 being a silicon nitride material;
step 3000: forming optical waveguides 1311, 1312 … 131n with the waveguide layer 13;
step 4000: forming an upper cladding layer of a high polymer material with a thickness of 15-30 μm on the waveguide layer 13;
step 5000: forming a micro channel 2, wherein the micro channel 2 penetrates through the upper cladding 142 and the waveguide layer 13 from top to bottom and extends into the lower cladding 141;
step 6000: removing the sacrificial layer 10 to strip the upper cladding layer 142, the waveguide layer 13 and the lower cladding layer 141 from the substrate 11;
the optical waveguides 1311, 1312 … 131n are used for guiding light into the micro channel 2 along the horizontal direction, the width of the micro channel 2 is 10-100 μm, and the micro channel 2 does not penetrate through the lower cladding 141; the corrosion selectivity of the sacrificial layer 10 is higher than that of the upper cladding layer 142, the waveguide layer 13 or the lower cladding layer 141, and the material of the sacrificial layer 10 is metal, polymer or oxide; the function of the traditional optical system is realized by integrating optics or an on-chip optical device, so that the traditional table-type or even large-scale optical system can be reduced to the chip size, the equal or even more excellent analysis performance is ensured, the high-flux chip-level optical detection and analysis integrated system of the biological sample under the micro-nano scale is realized, and the system cost is greatly reduced.
In all embodiments, the waveguide layer 13 is formed by inductively coupled plasma chemical vapor deposition at a deposition temperature of 25-150 c with a supply of reactive carrier gas comprising a silicon gas source and a nitrogen gas source in step 2000.
The following describes a process for forming the silicon nitride waveguide layer 13, especially depositing the silicon nitride waveguide layer 13 with adjustable optical properties at low temperature, to avoid softening, hardening or melting the lower cladding 141 of the polymer material, thereby realizing integration of the silicon nitride optical waveguide on a flexible substrate such as a polymer material, which can be used for being attached to other detection devices or materials, and the application range is greatly increased, including:
depositing an optically adjustable silicon nitride film on the lower cladding 141 by an inductively coupled plasma chemical vapor deposition method, wherein the deposition temperature is 25-150 ℃, softening, hardening or melting of the lower cladding 141 of the high polymer polymeric material is avoided, and a reaction carrier gas is introduced, the reaction carrier gas comprises a silicon gas source and a nitrogen gas source, the flow ratio of the nitrogen gas source to the silicon gas source is 0.5-16, and the thickness of the silicon nitride film is 150nm-1000nm, so that the silicon nitride optical waveguide is integrated on the flexible substrate of the high polymer polymeric material and the like, can be used for being attached to other detection devices or materials, and the application range is greatly increased; different from the traditional generation mechanism of capacitive coupling radio frequency and other low-pressure high-density plasmas, the Inductive Coupling Plasma Chemical Vapor Deposition (ICPCVD) method applies high-frequency current on an inductive coil, and the coil excites a changing magnetic field under the drive of the radio-frequency current, and the changing magnetic field induces a cyclotron electric field. The electrons make a cyclotron motion under the acceleration of a cyclotron electric field, the reaction carrier gas molecules are collided and dissociated, a large number of active plasma groups are generated, the air flow transports the active plasma groups to the surface of the lower cladding 141 and the active plasma groups are adsorbed, and the surface of the lower cladding 141 reacts to form the silicon nitride film; the cyclotron of electrons in the inductively coupled plasma chemical vapor deposition increases the collision probability with gas molecules, and can generate higher plasma density than the traditional capacitive discharge, so that the low-temperature rapid deposition of high-quality films becomes possible; the silicon nitride film formed in the step has good compactness, small damage to the flexible substrate, good refractive index, adhesiveness, step coverage and stability, low impurity and hole content and high breakdown voltage. The temperature range of the silicon nitride film deposited in the step is 25-150 ℃, which is far lower than the PECVD deposition temperature, the silicon nitride film is deposited on the lower cladding 141 under the low-temperature process, and the refractive index of the silicon nitride film is adjusted by adjusting the reaction carrier gas, so that the optical performance of the silicon nitride film is adjustable. The refractive index of the silicon nitride film is 1.75-2.2. The silicon nitride film may be a film having a uniform refractive index, or may be a film having a non-uniform refractive index, such as a silicon nitride film having a layered refractive index structure.
Wherein the light source direction is different according to the introduction of the optical waveguide assembly 131, such as: fig. 1e illustrates the introduction of a light source from an optical fiber (not shown) at the left end of the optical waveguide group 131, and fig. 2f illustrates the introduction of a light source from above the optical waveguide group 131, respectively describing the manufacturing methods thereof.
Fig. 1e, the present optical waveguide microfluidic chip with light source introduced from the optical fiber (not shown) at the left end of the optical waveguide set 131, is described as follows:
to form the mutually parallel optical waveguides 1311, 1312 … 131n in the optical waveguide group 131 shown in fig. 3. As shown in fig. 1a, in step 3000, the thickness of the waveguide layer 13 is 150-1000nm, photoresist 16 is coated on the waveguide layer 13 to form a plurality of mutually parallel optical waveguide masks (not shown) and micro-channel masks (not shown), the waveguide layer 13 is etched to form the optical waveguide set 131 and partial channels (not shown) on one microfluidic shown in fig. 3 and 1b, the optical waveguide set 131 includes a plurality of, e.g. n, mutually parallel optical waveguides 1311, 1312 … 131n to introduce light into the micro-channel 2 along the horizontal direction, in the actual detection, for biomolecules with different labels in the micro-channel 2, the optical waveguides 1311, 1312 … 131n can introduce light with the wavelengths λ 1, λ 2 … λ n into the micro-channel 2 along the horizontal direction, and the biomolecules 21 with different labels can be simultaneously identified by exciting the biomolecules with light with different wavelengths, while the non-excisional biomolecules 20 which are not in the excited light field introduced by the light guides 1311, 1312 … 131n will not be recognized, the non-excisional biomolecules 20 being unlabeled normal biomolecules or biomolecules which are labeled but which are outside the light field and are not excited; as shown in FIG. 3, the widths of the optical waveguides 1311, 1312 … 131n are 300-600 nm. As shown in fig. 1c, an upper cladding layer 142 of 15-30 μm polymer material is then spin-coated on the surface of the waveguide layer 13. As shown in fig. 1c, in step 5000, the upper cladding layer 142 is soft-baked, the position of the preliminary flow channel is locally exposed, and then hard-baked, and the preliminary flow channel is developed to form a preliminary flow channel (not shown) penetrating the upper cladding layer 142 and having a width of 10-100 um. As shown in fig. 1d, the waveguide layer 13 and a portion of the lower cladding layer 141 under the preliminary flow channel are etched by reactive ion etching using the upper cladding layer 142 as a mask, so as to form the micro flow channel 2 shown in fig. 1 d. In step 6000, as shown in fig. 1d, the sacrificial layer 10 is removed by wet etching, dry vapor etching or reactive ion etching to strip the upper cladding layer 142, the waveguide layer 13 and the lower cladding layer 141 from the substrate 11, so as to form the optical waveguide microfluidic chip shown in fig. 1e and fig. 3.
As shown in fig. 4, the whole or most of the waveguide layer 13 forms a sheet-shaped optical waveguide 1311, and the excitation light field introduced by the sheet-shaped optical waveguide 1311 can reduce the background light signal in the detection-labeled biomolecule, thereby greatly improving the detection rate of the small biomolecule. To form the slab optical waveguide 1311: as shown in fig. 1a, after forming the waveguide layer 13 with a thickness of 150-1000nm in step 3000, a photoresist is coated on the waveguide layer 13 to form a micro-channel mask (not shown), the waveguide layer 13 is etched to form the slab optical waveguide 1311 shown in fig. 4 and a portion of the micro-channel (not shown) shown in fig. 1b, as shown in fig. 1c, and then a top cladding layer 142 of 15-30 μm polymer material is coated on the surface of the waveguide layer 13. As shown in fig. 1c, in step 5000, the upper cladding layer 142 is soft-baked, the position of the preliminary flow channel is locally exposed, and then hard-baked, and the preliminary flow channel is developed to form a preliminary flow channel (not shown) penetrating the upper cladding layer 142 and having a width of 10-100 um. As shown in fig. 1d, the waveguide layer 13 and a portion of the lower cladding layer 141 under the preliminary flow channel are etched by reactive ion etching using the upper cladding layer 142 as a mask, so as to form the micro flow channel 2 shown in fig. 1 d. In step 6000, as shown in fig. 1d, the sacrificial layer 10 is removed by wet etching, dry vapor etching or reactive ion etching to peel off the upper cladding layer 142, the waveguide layer 13 and the lower cladding layer 141 from the substrate 11, thereby forming an optical waveguide microfluidic chip including the sheet optical waveguide 1311 as shown in fig. 1e and fig. 4.
The following describes a method of manufacturing an optical waveguide microfluidic chip comprising coupled optical waveguides, as shown in fig. 2f, which introduces a light source from above the optical waveguide assembly 131, as shown in fig. 2 f:
as shown in fig. 2a, in step 2000, forming the waveguide layer 13 with a thickness of 150-1000nm on the lower cladding layer 141, in step 3000, spin-coating photoresist (not shown) on the waveguide layer 13 to form a plurality of mutually parallel optical waveguide masks, etching the waveguide layer 13 to form a plurality of mutually parallel optical waveguides, in this step, forming the optical waveguides (horizontal portions) including the coupling optical waveguides as shown in fig. 3; as shown in fig. 2b and fig. 3, in step 3000, photoresist 16 is again coated to form an incident grating mask, and a plurality of incident gratings (not shown) are deposited to form a plurality of coupling optical waveguides parallel to each other with the optical waveguide, where the width of the coupling optical waveguide is 300-600 nm. Forming a micro flow channel mask on the waveguide layer 13 on which the coupling optical waveguide has been formed, using a photoresist 16, as shown in fig. 2c, and etching the waveguide layer 13 using a reactive ion etching method to form a portion of flow channels (not shown) as shown in fig. 2 c; as shown in fig. 2d, in step 3000, a layer of upper cladding layer 142 of 15-30 μm polymer material is spin-coated on the surface of the waveguide layer 13, and the upper cladding layer 142 is a light-transmissive layer. As shown in fig. 2d, in step 5000, the upper cladding 142 is soft-baked, the position on the upper cladding 142 where the micro flow channel 2 is to be formed is locally exposed, and then hard-baked and developed to remove all the upper cladding 142 and part of the lower cladding 141 corresponding to the part of the flow channel, as shown in fig. 2e, so as to form the micro flow channel 2. In step 6000, as shown in fig. 2e, the sacrificial layer 10 is removed by wet etching, dry vapor etching or reactive ion etching to strip the upper cladding layer 142, the waveguide layer 13 and the lower cladding layer 141 from the substrate 11, thereby completing the fabrication of the optical waveguide microfluidic chip of the coupling optical waveguide group 131 shown in fig. 2f and fig. 3.
It should be noted that, the coupling optical waveguide or the incident grating may be formed by: forming a waveguide layer 13 of silicon nitride with a thickness greater than 600nm, forming mutually parallel optical waveguide masks on the waveguide layer 13 by using photoresist, etching the waveguide layer 13 to obtain mutually parallel optical waveguides (integral parts) with a width of 300-600nm, and performing spin-coating photoresist exposure to form an incident grating (not shown) to form a coupled optical waveguide.
As shown in fig. 1d and 2e, the polymer material of the upper cladding 142 is SU-8 resin, polyimide, polydimethylsilane, polyethylene or benzocyclobutene.
In step 6000, the sacrificial layer 10 is removed using wet etching, dry vapor etching, or reactive ion etching.
As shown in fig. 1a to 2f, the substrate 11 is a silicon substrate.
The manufacturing method of the optical waveguide microfluid provided by the invention produces the secondary chip-level optical detection chip by an integrated circuit process, realizes the function of the traditional optical system by integrated optics or an on-chip optical device, not only can reduce the size of the traditional desktop or even large-scale optical system to the chip size, but also ensures the equal or even more excellent analysis performance, realizes the high-flux chip-level optical detection and analysis integrated system of biological samples under the micro-nano scale, and greatly reduces the system cost.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A method of fabricating an optical waveguide microfluidic chip, comprising:
step 1000: providing a substrate, forming a sacrificial layer on the substrate, and forming a lower cladding layer made of a high polymer material with the thickness of 15-30 mu m on the sacrificial layer;
step 2000: forming a waveguide layer on the lower cladding layer, the waveguide layer being a silicon nitride material;
step 3000: forming an optical waveguide with the waveguide layer;
step 4000: forming an upper cladding layer of a high polymer material with the thickness of 15-30 mu m on the waveguide layer;
step 5000: forming a micro-channel, wherein the micro-channel penetrates through the upper cladding and the waveguide layer from top to bottom and extends into the lower cladding;
step 6000: removing the sacrificial layer to strip the upper cladding layer, the waveguide layer, and the lower cladding layer from the substrate;
the optical waveguide is used for guiding light into the micro-channel along the horizontal direction, the width of the micro-channel is 10-100 mu m, and the micro-channel does not penetrate through the lower cladding; the corrosion selectivity of the sacrificial layer is higher than that of the upper cladding layer, the waveguide layer or the lower cladding layer, and the material of the sacrificial layer is metal, polymer or oxide;
in step 2000, the waveguide layer is formed by inductively coupled plasma chemical vapor deposition at a deposition temperature of 25-150 ℃ and by introducing a reaction carrier gas comprising a silicon gas source and a nitrogen gas source.
2. The method as claimed in claim 1, wherein in step 3000, the thickness of the waveguide layer is 150-1000nm, a photoresist is spin-coated on the waveguide layer to form a plurality of mutually parallel optical waveguide masks, the waveguide layer is etched to form a plurality of mutually parallel optical waveguides, and the width of the optical waveguides is 300-600 nm.
3. The method as claimed in claim 1, wherein the waveguide layer is formed on the lower cladding layer to a thickness of 150-1000nm in step 2000;
step 3000, spin-coating photoresist on the waveguide layer to form an optical waveguide mask, and etching the waveguide layer to form the optical waveguide; and spin-coating photoresist again to form an incident grating mask, depositing to form an incident grating to form a coupling optical waveguide with the optical waveguide, wherein the width of the coupling optical waveguide is 300-600 nm.
4. The method as claimed in claim 1, wherein the waveguide layer is formed on the lower cladding layer to a thickness of 150-1000nm in step 2000;
step 3000, spin-coating photoresist on the waveguide layer to form a plurality of parallel optical waveguide masks, and etching the waveguide layer to form a plurality of parallel optical waveguides; and spin-coating photoresist again to form an incident grating mask, depositing to form a plurality of incident gratings to form a plurality of parallel coupling optical waveguides with the optical waveguide, wherein the width of the coupling optical waveguide is 300-600 nm.
5. The method of claim 1, wherein in step 1000, the lower cladding layer is formed on the substrate using a chemical vapor deposition method or a thermal oxidation method.
6. The method of claim 1, wherein step 4000 comprises spin coating the polymeric material over the waveguide layer.
7. The method of claim 1, wherein step 5000 further comprises the process of forming a mask with the upper cladding layer: soft-baking the upper cladding, carrying out local exposure on a position on the upper cladding where a micro-channel is scheduled to be formed, and forming a preparation channel which penetrates through the upper cladding and has a width of 10-100 mu m after hard-baking and developing;
and etching the waveguide layer and part of the lower cladding layer below the preparation flow channel by using the upper cladding layer as a mask by using a reactive ion etching method to form the micro-flow channel.
8. The method of claim 1, wherein the polymeric material is SU-8 resin, polyimide, polydimethylsilane, polyethylene, or benzocyclobutene.
9. The method of claim 1, wherein in step 6000, the sacrificial layer is removed using wet etching, dry vapor etching or reactive ion etching.
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| CN103586093A (en) * | 2013-11-13 | 2014-02-19 | 东南大学 | Microfluidic chip and manufacturing method thereof |
| CN104483498A (en) * | 2014-12-24 | 2015-04-01 | 中国科学院半导体研究所 | Sensing chip and preparation method thereof |
| CN110062180A (en) * | 2015-05-14 | 2019-07-26 | 科磊股份有限公司 | The sensor and metering system with electrically controllable aperture for inspection |
| CN104865223A (en) * | 2015-05-27 | 2015-08-26 | 东南大学 | Refractive index sensing chip of silicon nitride waveguide Bragg grating and preparation method of refractive index sensing chip |
| CN106125175A (en) * | 2016-06-24 | 2016-11-16 | 中国科学院长春光学精密机械与物理研究所 | A kind of slower rays structure, absorbency detection method and micro-fluidic chip |
| CN109856087A (en) * | 2018-12-29 | 2019-06-07 | 复旦大学 | Sensing chip and preparation method thereof, detection system, detection method |
| CN110530855A (en) * | 2019-10-12 | 2019-12-03 | 重庆理工大学 | High-throughput optical waveguide biosensor sensing chip |
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