CN111223882B - Image sensor, image processing method and storage medium - Google Patents

Image sensor, image processing method and storage medium Download PDF

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CN111223882B
CN111223882B CN202010037703.7A CN202010037703A CN111223882B CN 111223882 B CN111223882 B CN 111223882B CN 202010037703 A CN202010037703 A CN 202010037703A CN 111223882 B CN111223882 B CN 111223882B
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CN111223882A (en
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杨鑫
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
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    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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Abstract

An embodiment of the application provides an image sensor, an image processing method and a storage medium, wherein the image sensor comprises: the color polarization laminated pixel array comprises a first layer of polarization pixel array and a second layer of polarization pixel array, wherein the first layer of polarization pixel array comprises a plurality of pixel arrays which are polarized towards a plurality of first preset directions, the second layer of polarization pixel array comprises a plurality of pixel arrays which are polarized towards a plurality of second preset directions, the first preset directions are orthogonal to the corresponding second preset directions, PD columns with the same size are arranged at corresponding positions of the first layer of polarization pixel array and the second layer of polarization pixel array, and the color polarization laminated pixel array respectively absorbs RGB (red, green and blue) three-color light of an imaging optical signal which is polarized in the plurality of first preset directions and the plurality of second preset directions by utilizing the PD columns with three sizes; the image processor is used for determining polarization information and color information by using RGB (red, green and blue) three-color light; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.

Description

Image sensor, image processing method and storage medium
Technical Field
The present disclosure relates to the field of image processing, and in particular, to an image sensor, an image processing method, and a storage medium.
Background
Complementary Metal-Oxide Semiconductor (CMOS) Image sensors have the characteristics of high integration level, low power consumption, high speed, low cost and the like, and are widely applied to high-resolution pixel products. The CIS includes two forms of monochromatic polarization and multi-color polarization, and the color polarization makes the color of the generated image more vivid than that of the monochromatic polarization due to the fact that the acquired color is richer.
The structure of the existing polarization CIS comprises a micro lens array, a polarizer array and a pixel array, wherein each pixel comprises a Photodiode (PD) structure, a polarizer with an angle and a micro lens are arranged on the PD structure, four polarizers with different angles are respectively arranged on every four pixels, every four pixels are used as a calculation unit, the polarization degree and the polarization direction are calculated through the association between the polarizers with different directions, and then a polarization image is obtained according to the polarization degree and the polarization direction.
However, the existing polarization CIS needs to acquire polarization information of four different angles through four pixels, and needs a micro lens array to implement an operation of condensing an imaging optical signal, resulting in a low utilization rate of the pixel polarization information.
Disclosure of Invention
Embodiments of the present application provide an image sensor, an image processing method, and a storage medium, which can improve utilization rate of pixel polarization information.
The technical scheme of the application is realized as follows:
an embodiment of the present application provides an image sensor, including:
a color polarization laminated pixel matrix composed of a first layer polarization pixel matrix and a second layer polarization pixel matrix, wherein the first layer of polarized pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of first preset directions, one first preset direction corresponds to one pixel array, the second layer of polarized pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of second preset directions, one second preset direction corresponds to one pixel array, the first preset direction is orthogonal to the corresponding second preset direction, the pixel array comprises photodiode PD columns with three sizes, PD columns with the same size are arranged at the corresponding positions of the first layer of polarization pixel square matrix and the second layer of polarization pixel square matrix, the color polarization laminated pixel square matrix respectively absorbs RGB three-color light of imaging light signals polarized in the first preset directions and the second preset directions by using PD columns with three sizes;
the image processor is connected with the output end of the color polarization laminated pixel square array and is used for determining polarization information and color information by utilizing the RGB three-color light; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.
In the above image sensor, the one pixel array includes a plurality of pixel units, and a PD column of one of the three sizes corresponds to at least one of the plurality of pixel units, wherein one pixel unit includes a group of PD columns of the same size;
one pixel unit absorbs corresponding RGB monochromatic light by using a group of PD columns of the same size.
In the above image sensor, the image sensor further comprises a color filter array covering an input end of the first layer of the square matrix of polarized pixels; wherein the color filter array has the same color arrangement as the pixel array in the first layer of polarization pixel square array.
And the color filter square matrix is used for filtering RGB three-color light corresponding to the color information of the color filter square matrix from the imaging light signal.
In the above image sensor, the image sensor further includes: a CMOS pixel readout circuit; the output end of the color polarization laminated pixel array is connected with the image processor through a CMOS pixel reading circuit;
the color polarization laminated pixel square matrix is also used for converting optical signals corresponding to RGB three-color light into corresponding electric signals;
the CMOS pixel readout circuit is used for amplifying the electric signals and reading out the image processor.
In the above image sensor, the first layer of polarization pixel square array further includes a plurality of groups of transfer gate connection circuits, wherein one group of transfer gate circuits corresponds to one pixel array in the first layer of polarization pixel square array, the plurality of groups of transfer gate connection circuits respectively pass through the second layer of polarization pixel square array, and the plurality of pixel arrays in the first layer of polarization pixel square array are connected with the CMOS pixel readout circuit through the plurality of groups of transfer gate connection circuits.
In the image sensor, one pixel unit corresponds to one n region; the electric signals of the corresponding RGB monochromatic light absorbed by one pixel unit are concentrated to a corresponding n area.
In the image sensor, the distance between two adjacent PD columns is a preset distance, the number of PD columns corresponding to one pixel unit in the first layer of polarization pixel square array is determined by the size of one pixel unit and the preset distance, and the number of PD columns corresponding to one pixel unit in the second layer of polarization pixel square array is determined by the size of the transfer gate connection circuit, the size of one pixel unit and the preset distance.
In the above image sensor, the CMOS pixel readout circuit includes: the pixel array comprises a transfer transistor connected with the color polarization laminated pixel array, a reading area connected with the transfer transistor and an amplifying tube connected with the reading area;
the transfer transistor is used for transferring the electric signals corresponding to the RGB three-color light to a readout area so as to read the electric signals from the readout area;
the amplifying tube is used for amplifying the electric signal of the readout region.
In the above image sensor, the CMOS pixel readout circuit further includes: a reset transistor connected to the readout region and the amplifying transistor;
the readout region is also used for reading out a reset level in the reset transistor;
the amplifying tube is also used for amplifying the reset level.
The embodiment of the application provides an image processing method, which is applied to an image sensor, wherein the image sensor comprises a color polarization laminated pixel square matrix and an image processor, the color polarization laminated pixel square matrix is composed of a first layer polarization pixel square matrix and a second layer polarization pixel square matrix, the first layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of first preset directions, the second layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of second preset directions, each pixel array comprises photodiode PD columns with three sizes, and the method comprises the following steps:
absorbing the RGB three-color light polarized in the first preset directions of the imaging light signals by utilizing a plurality of pixel arrays of the first layer of polarized pixel square array polarized in the first preset directions, and converting the light signals corresponding to the RGB three-color light polarized in the first preset directions into electric signals corresponding to the RGB three-color light polarized in the first preset directions;
absorbing the RGB three-color light polarized in the second preset directions of the imaging light signals by utilizing a plurality of pixel arrays of the second layer of polarized pixel square array polarized in the second preset directions, and converting the light signals corresponding to the RGB three-color light polarized in the second preset directions into electric signals corresponding to the RGB three-color light polarized in the second preset directions;
determining the polarization information and the color information of the RGB three-color light by using the image processor; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.
In the above method, the image sensor further includes: a CMOS pixel readout circuit; the output end of the color polarization laminated pixel array is connected with the image processor through a CMOS pixel reading circuit; after the converting the optical signals corresponding to the RGB three-color light polarized in the second preset direction into the electrical signals corresponding to the RGB three-color light polarized in the second preset direction, the method further includes:
and amplifying electric signals corresponding to the RGB three-color light polarized in the first preset directions and electric signals corresponding to the RGB three-color light polarized in the second preset directions by using the CMOS pixel reading circuit, and reading the electric signals corresponding to the RGB three-color light polarized in the first preset directions and the electric signals corresponding to the RGB three-color light polarized in the second preset directions.
The present application provides a storage medium, on which a computer program is stored, and the computer program is applied to an image sensor, wherein the computer program is implemented to implement the method according to any one of the above when executed by a processor.
An embodiment of the application provides an image sensor, an image processing method and a storage medium, wherein the image sensor comprises: a color polarization laminated pixel matrix composed of a first layer polarization pixel matrix and a second layer polarization pixel matrix, the first layer of polarization pixel square array comprises a plurality of pixel arrays polarized towards a plurality of first preset directions, one first preset direction corresponds to one pixel array, the second layer of polarization pixel square array comprises a plurality of pixel arrays polarized towards a plurality of second preset directions, one second preset direction corresponds to one pixel array, the first preset direction is orthogonal to the corresponding second preset direction, the pixel arrays comprise photodiode PD columns with three sizes, PD columns with the same size are arranged at corresponding positions of the first layer of polarization pixel square array and the second layer of polarization pixel square array, and the color polarization laminated pixel square array respectively absorbs RGB (red, green and blue) three-color light polarized in the plurality of first preset directions and the plurality of second preset directions of an imaging optical signal by utilizing the PD columns with three sizes; the image processor is connected with the output end of the color polarization laminated pixel square array and is used for determining polarization information and color information by utilizing RGB (red, green and blue) three-color light; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information. By adopting the image sensor implementation scheme, the image sensor is provided with the first layer polarization pixel square matrix and the second layer polarization pixel square matrix, the first layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of first preset directions, and the second layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of second preset directions, so that each pixel can acquire two orthogonal polarization information, and the utilization rate of the pixel polarization information is improved.
Drawings
Fig. 1 is a schematic structural diagram of an image sensor according to an embodiment of the present disclosure;
FIG. 2(a) is a schematic cross-sectional view of an exemplary first layer polarization pixel matrix provided in an embodiment of the present application;
FIG. 2(b) is a schematic cross-sectional view of an exemplary second layer polarization pixel matrix provided in an embodiment of the present application;
FIG. 3 is a schematic diagram of an exemplary color filter array corresponding to an RGGB array provided in an embodiment of the present application;
FIG. 4 is a schematic cross-sectional circuit diagram of an exemplary image sensor provided in an embodiment of the present application;
fig. 5 is a schematic circuit diagram of an exemplary CMOS pixel readout circuit of an image sensor according to an embodiment of the present disclosure;
fig. 6 is a flowchart of an image processing method according to an embodiment of the present application.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the present application. And are not intended to limit the present application.
Example one
The embodiment of the present application provides an image sensor 1, as shown in fig. 1, the image sensor 1 includes:
a color polarization stacked pixel matrix 10 comprised of a first layer polarization pixel matrix 100 and a second layer polarization pixel matrix 101, wherein the first layer polarized pixel matrix 100 comprises a plurality of pixel arrays polarized to a plurality of first predetermined directions, one first predetermined direction corresponding to one pixel array, the second layer polarization pixel matrix 101 comprises a plurality of pixel arrays polarized to a plurality of second predetermined directions, one second predetermined direction corresponding to one pixel array, the first preset direction is orthogonal to the corresponding second preset direction, the pixel array comprises photodiode PD columns with three sizes, PD columns with the same size are arranged at the corresponding positions of the first layer polarization pixel matrix 100 and the second layer polarization pixel matrix 101, the color polarization laminated pixel matrix 10 respectively absorbs RGB three-color light of the imaging light signal polarized in the plurality of first preset directions and the plurality of second preset directions by using PD columns of three sizes;
the image processor 11 is connected with the output end of the color polarization laminated pixel square matrix 10 and is used for determining polarization information and color information by using the RGB three-color light; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.
The image sensor provided by the embodiment of the application is applied to a scene where the acquired optical signals are subjected to image processing to obtain images corresponding to the optical signals.
In the embodiment of the present application, a first layer polarization pixel square matrix and a second layer polarization pixel square matrix in a color polarization stacked pixel square matrix are vertically arranged, and any first preset direction in the first layer polarization pixel square matrix is orthogonal to a second preset direction in the second layer polarization pixel square matrix at the same position.
In the embodiment of the application, the arrangement mode and the pixel array type of the pixel array in the first layer of polarization pixel square matrix and the pixel array in the second layer of polarization pixel square matrix are the same, that is, a first preset direction of one pixel array arranged in the first layer is vertical to a second preset direction of one pixel array arranged in the second layer; the image sensor can acquire polarization signals of two orthogonal directions of one color channel through a laminated pixel array.
Optionally, the pixel array is RGGB, BGGR, GBRG, GRBG, or the like, and is specifically selected according to an actual situation, which is not specifically limited in the embodiment of the present application.
In this embodiment of the application, the preset directions may include four polarization directions of 0 °, 45 °, 90 °, and 135 °, and may be further refined according to an actual situation, which is not specifically limited in this embodiment of the application.
Illustratively, the polarization direction of the pixel array at position 1 in the first layer of polarized pixel square matrix is 0 °, and the polarization direction of the pixel array at the same position 1 in the second layer of polarized pixel square matrix is 90 °; the polarization direction of the pixel array at position 2 in the first layer of polarized pixel square matrix is 45 deg., and the polarization direction of the pixel array at the same position 2 in the second layer of polarized pixel square matrix is 135 deg..
In the embodiment of the present application, the pixel array includes photodiode PD pillars of three sizes, the PD pillars of three sizes are arranged according to the arrangement rule of the pixel array and the color arrangement mode corresponding to the pixel array, for example, when the pixel array is RGGB, the specification of the pixel array is 2 × 2, PD pillars for absorbing blue light are arranged at the (1, 1) position of the pixel, PD pillars for absorbing green light are arranged at the (1,2) and (2,1) positions of the pixel array, and PD pillars for absorbing red light are arranged at the (2,2) position of the pixel array.
Optionally, the PD column includes a rectangle, a circle, a parallelogram, a rhombus, and the like, and is specifically selected according to an actual situation, and the embodiment of the present application is not specifically limited.
In the embodiment of the present application, the diameter of the PD column is determined based on the resonance wavelength of the RGB monochromatic light and the refractive index of the optical signal, or is obtained through optical simulation, and is specifically selected according to the actual situation, which is not specifically limited in the embodiment of the present application.
In the embodiment of the application, the size of the PD column is determined by using the formula (1)
PD column size (resonance wavelength-predetermined constant)/refractive index (1)
For example, for a cylindrical PD column, the diameter of the cylindrical PD column is 90nm when absorbing green light; the diameter of the cylindrical PD column was 60nm when absorbing blue light; the diameter of the cylindrical PD column was 120nm when absorbing red light.
For example, for a rectangular parallelepiped PD column, the dimensions of the rectangular parallelepiped PD column are 90nm by 50nm when absorbing green light; the size of the cuboid PD column is 60nm x 50nm when absorbing blue light; the dimensions of the cuboid PD column were 120nm 50nm when absorbing red light.
Optionally, the pixel array includes a plurality of pixel units, and a PD column of one of the three sizes corresponds to at least one of the plurality of pixel units, where one pixel unit includes a group of PD columns of the same size;
one pixel unit absorbs corresponding RGB monochromatic light by using a group of PD columns of the same size.
Taking RGGB as an example, an RGGB array includes four pixel units, each pixel unit is composed of a group of PD pillars with the same size, where one pixel unit absorbs R light using a 120nm × 50nm rectangular PD pillar, two pixel units absorb G light using a 90nm × 50nm rectangular PD pillar, and one pixel unit absorbs B light using a 60nm × 50nm rectangular PD pillar. The number of the group of PD pillars included in each pixel unit is at least determined by a preset distance between two adjacent PD pillars, a size of the PD pillars, and a size of the pixel unit.
In an alternative embodiment, two layers of PD columns in the color polarization stacked pixel square array corresponding to the RGGB array are arranged as shown in fig. 2(a) and 2(b), where fig. 2(a) is a first layer polarization pixel square array of the color polarization stacked pixel square array, fig. 2(b) is a second layer polarization pixel square array of the color polarization stacked pixel square array, each layer polarization pixel square array includes four RGGB arrays, each RGGB array is composed of four pixel units, each pixel unit includes 4 × 4 PD columns, and for the first RGGB array, the polarization direction of the first layer PD column is 0 ° and the polarization direction of the second layer PD column is 90 °; for the second RGGB array, the polarization direction of its first layer of PD pillars is 45 °, and the polarization direction of its second layer of PD pillars is 135 °; for the third RGGB array, the polarization direction of its first layer of PD pillars is 90 °, and the polarization direction of its second layer of PD pillars is 0 °; for the fourth RGGB array, the polarization direction of its first layer of PD pillars is 135 °, and the polarization direction of its second layer of PD pillars is 45 °.
Optionally, the image sensor 1 further includes a color filter array 12, where the color filter array 12 covers the input end of the first layer of the polarization pixel matrix 100; wherein the color filter array 12 has the same color arrangement as the pixel array in the first layer of the polarization pixel square array 100.
The color filter matrix 12 is configured to filter, from the imaging light signal, three RGB color lights corresponding to color information of the color filter matrix.
In the embodiment of the application, the input end of each pixel unit in the first layer of polarization pixel square array is covered with a color filter, the color information of the color filter is determined by the RGB monochromatic light absorbed by the corresponding pixel unit, and the color filters on the pixel units form the color filter array because the pixel array is formed by a plurality of pixel units.
Illustratively, fig. 3 shows a specific arrangement of the color filter array corresponding to the RGGB array.
In the embodiment of the present application, taking a color filter in a color filter square array as an example, an imaging light signal emitted by a light source passes through the color filter, and is filtered by color information of the color filter to filter out ultraviolet light, infrared light and other color stray light in the imaging light signal, so as to obtain RGB monochromatic light corresponding to the color filter, then the RGB monochromatic light passes through a first layer of pixel units corresponding to the position of the color filter in a first layer of polarization pixel square array, the first layer of pixel units absorbs the RGB monochromatic polarized light polarized towards a first preset direction by using PD pillars polarized towards a first preset direction and having one size, then the remaining light passes through a second layer of pixel units corresponding to the position of the color filter in a second layer of polarization pixel square array, the second layer of pixel units absorbs the RGB monochromatic polarized towards a second preset direction by using PD pillars polarized towards a second preset direction and having the same size as the first layer of pixel units, this results in RGB monochromatic polarized light in two orthogonal directions.
Optionally, the image sensor 1 further includes: a CMOS pixel readout circuit 13; the output end of the color polarization laminated pixel array 10 is connected with the image processor 11 through a CMOS pixel readout circuit 13;
the color polarization laminated pixel matrix 10 is further configured to convert optical signals corresponding to RGB three-color light into corresponding electrical signals;
the CMOS pixel readout circuit 13 is configured to amplify the electrical signal and read out the image processor.
Optionally, the first layer of polarization pixel square array 100 further includes a plurality of sets of transfer gate connection circuits, wherein one set of transfer gate circuit corresponds to one pixel array in the first layer of polarization pixel square array, the plurality of sets of transfer gate connection circuits respectively pass through the second layer of polarization pixel square array, and the plurality of pixel arrays in the first layer of polarization pixel square array 100 are connected to the CMOS pixel readout circuit 13 through the plurality of sets of transfer gate connection circuits.
In this embodiment, each pixel unit in the first layer of the polarization pixel square array corresponds to one transfer gate connection circuit, the transfer gate connection circuit connects the pixel unit in the first layer of the polarization pixel square array with the CMOS pixel readout circuit, and after the first layer of the polarization pixel square array converts the absorbed RGB three-color light polarized in the plurality of first preset directions into corresponding electrical signals, the plurality of groups of transfer gate connection circuits respectively transmit the electrical signals corresponding to the two kinds of RGB three-color light polarized in the plurality of first preset directions to the CMOS pixel readout circuit, so that the CMOS pixel readout circuit amplifies and reads the electrical signals corresponding to the RGB three-color light polarized in the plurality of first preset directions.
Optionally, one pixel unit corresponds to one n region; the electric signals of the corresponding RGB monochromatic light absorbed by one pixel unit are concentrated to a corresponding n area.
In the embodiment of the application, an n region is arranged below each layer of polarization pixel square array, the n region is equal to the output end of each corresponding layer of polarization pixel square array, the n region corresponding to the pixel unit in the first layer of polarization pixel square array is connected with the corresponding transfer gate circuit, the pixel unit in the first layer of polarization pixel square array concentrates the electric signal after photoelectric conversion to the n region and transmits the electric signal to the CMOS pixel readout circuit through the corresponding transfer gate connection circuit, the n region corresponding to the pixel unit in the second layer of polarization pixel square array is directly connected with the CMOS pixel readout circuit, and the pixel unit in the second layer of polarization pixel square array concentrates the electric signal after photoelectric conversion to the n region so that the CMOS pixel readout circuit can read out the electric signal from the n region.
Furthermore, each PD column corresponds to a p area, the p area of the first layer of polarization pixel square matrix is equal to the input end of the first layer of polarization pixel square matrix, and the color filter covers the input end of the first layer of polarization pixel square matrix.
For example, a cross-sectional view of a pixel of a color polarization stacked pixel matrix is shown in fig. 4, where the color polarization stacked pixel matrix includes a blue polarization stacked pixel, a red polarization stacked pixel, and a green polarization stacked pixel, and taking the blue polarization stacked pixel as an example, the blue polarization stacked pixel includes a first layer of blue polarization pixel covering a blue color filter, a second layer of blue polarization pixel, and a CMOS readout circuit, and a signal flow direction of the blue polarization stacked pixel passes through the blue color filter, then sequentially passes through the first layer of blue polarization pixel and the second layer of blue polarization pixel, and then passes through the CMOS pixel readout circuit. The first layer of blue polarization pixels are composed of a group of cuboid PD columns polarized towards a first preset direction, an n area is arranged below the cuboid PD columns polarized towards the first preset direction, the n area is connected with a transfer gate connecting circuit of the first layer of blue polarization pixels, and the transfer gate connecting circuit of the first layer of blue polarization pixels is connected with a CMOS pixel reading circuit; the second layer of blue polarized pixels are composed of a group of cuboid PD columns polarized towards a second preset direction, and an n area is arranged below the cuboid PD columns polarized towards the second preset direction and connected with a CMOS pixel reading circuit.
It should be noted that the absorption rate is higher as the thickness of the pixel array is longer, and for the pixel array for absorbing blue light, the thickness is set to be more than 80nm, and the absorption rate of the pixel array at 1um can reach more than 98%; for the pixel array for absorbing green light, the thickness thereof is set to 500nm or more; for an array of pixels that absorb red light, the thickness is set between 1um and 2 um.
Optionally, a distance between two adjacent PD columns is a preset distance, the number of PD columns corresponding to one pixel unit in the first layer of polarization pixel square array is determined by the size of the one pixel unit and the preset distance, and the number of PD columns corresponding to one pixel unit in the second layer of polarization pixel square array is determined by the size of the transfer gate connection circuit, the size of the one pixel unit, and the preset distance.
In the embodiment of the present application, a distance between two adjacent PD pillars 100 in one pixel unit in each layer of polarization pixel square array is a preset distance, the number of PD pillars in one pixel unit in the first layer of polarization pixel square array is determined by the size of the stacked pixel units and the preset distance, and the number of PD pillars in one pixel unit in the second layer of polarization pixel square array is determined by the size of the transfer gate connection circuit, the size of the stacked pixel units, and the preset distance.
In the embodiment of the application, the preset distance between two adjacent PD columns in one pixel unit in each layer of polarization pixel square matrix is greater than or equal to 50nm, so that mutual interference between the adjacent PD columns can be avoided.
In the embodiment of the application, because the first layer of the polarization pixel square array does not have a transfer gate connection circuit corresponding to the other layer of the polarization pixel square array, the number of the PD columns in one pixel unit in the first layer of the polarization pixel square array is obtained by dividing the size of the pixel unit by the preset distance; the second layer of polarization pixel square array further comprises a transfer gate connection circuit corresponding to the first layer of polarization pixel square array, so that the number of PD columns in one pixel unit in the second layer of polarization pixel square array is obtained by subtracting the size of the first transfer gate circuit from the size of the pixel unit and dividing the result by the preset distance, the specific calculation method is set and adjusted according to actual conditions, and the embodiment of the application is not specifically limited.
Optionally, the CMOS pixel readout circuit 13 includes: the pixel array comprises a transfer transistor connected with the color polarization laminated pixel array, a reading area connected with the transfer transistor and an amplifying tube connected with the reading area;
the transfer transistor is used for transferring the electric signals corresponding to the RGB three-color light to a readout area so as to read the electric signals from the readout area;
the amplifying tube is used for amplifying the electric signal of the readout region.
In the embodiment of the application, the source electrode of the transfer transistor is connected with the transfer gate connecting circuit or the n region of the pixel array in the second layer polarization pixel array; the drain of the transfer transistor is connected to an FD (readout region); the PD column focuses the electrical signal to the n + region of the transfer transistor and transfers it to the FD via the transfer transistor.
In the embodiment of the application, light rays are subjected to photoelectric conversion in the depletion region of the PD column, optical signals are converted into electric signals, and then the electric signals are gathered to the n + region channel of the transfer transistor by the transfer transistor; and transfers the electrical signal in the n + region channel to the FD.
Optionally, the CMOS pixel readout circuit 13 further includes: a reset transistor connected to the readout region and the amplifying transistor;
the readout region is also used for reading out a reset level in the reset transistor;
the amplifying tube is also used for amplifying the reset level.
In the embodiment of the application, the source electrode of the reset tube is connected with the power supply; the drain of the reset tube is connected to the FD, wherein the reset tube stores a reset level, and the reset level is read out through the FD.
In the embodiment of the present application, the reset level is read out from the reset transistor, the electrical signal is read out from the transfer transistor, and then, after the reset level and the electrical signal are amplified, correlated double sampling is performed on the amplified electrical signal and the amplified reset level, thereby reducing noise of the read electrical signal.
As shown in fig. 5, which is a simplified schematic diagram of a color polarization stacked pixel matrix circuit, a first layer PD column of a blue polarization stacked pixel 1 absorbs blue light polarized towards 0 °, a second layer PD column absorbs blue light polarized towards 90 °, and a blue color filter covers the first layer PD column of the blue polarization stacked pixel 1; the first layer of PD columns of the green polarization laminated pixel 2 absorbs green light polarized towards 0 degrees, the second layer of PD columns absorbs green light polarized towards 90 degrees, and the first layer of PD columns of the green polarization laminated pixel 1 is covered with a green color filter; the first layer of PD columns of the red polarization laminated pixel 3 absorbs red light polarized towards 0 degrees, the second layer of PD columns absorbs red light polarized towards 90 degrees, and a red color filter covers the first layer of PD columns of the red polarization laminated pixel 1; taking the first PD column layer of the blue polarization stacked pixel 1 as an example, the transfer gate connection circuit corresponding to the first PD column layer is connected to the source of the transfer transistor, and the drain of the transfer transistor is connected to the FD; the FD is also connected with the drain electrode of the reset tube, and the source electrode of the reset tube is connected with a power supply; the FD is also connected with a grid electrode of the BSF, a source electrode of the BSF is connected with a power supply, a drain electrode of the BSF is connected with a source electrode of the gate tube, and a drain electrode of the gate tube is connected with an output end.
It can be understood that the image sensor is provided with a first layer polarization pixel square matrix and a second layer polarization pixel square matrix, the first layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of first preset directions, and the second layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of second preset directions, so that each pixel can acquire two orthogonal polarization information, and the utilization rate of the pixel polarization information is improved.
Example two
The embodiment of the application provides an image processing method, which is applied to an image sensor, wherein the image sensor comprises a color polarization laminated pixel square matrix and an image processor, the color polarization laminated pixel square matrix is composed of a first layer polarization pixel square matrix and a second layer polarization pixel square matrix, the first layer polarization pixel square matrix comprises a plurality of pixel arrays which are polarized towards a plurality of first preset directions, the second layer polarization pixel square matrix comprises a plurality of pixel arrays which are polarized towards a plurality of second preset directions, the pixel arrays comprise photodiode PD columns with three sizes, and as shown in FIG. 6, the method comprises the following steps:
s101, absorbing RGB three-color light polarized in a plurality of first preset directions of an imaging light signal by using a plurality of pixel arrays of a first layer of polarized pixel square array, wherein the pixel arrays are polarized in the plurality of first preset directions, and converting light signals corresponding to the RGB three-color light polarized in the plurality of first preset directions into electric signals corresponding to the RGB three-color light polarized in the plurality of first preset directions.
The image processing method provided by the embodiment of the application is suitable for a scene in which the acquired optical signals are subjected to image processing to obtain the images corresponding to the optical signals.
In the embodiment of the present application, a first layer polarization pixel square matrix and a second layer polarization pixel square matrix in a color polarization stacked pixel square matrix are vertically arranged, and any first preset direction in the first layer polarization pixel square matrix is orthogonal to a second preset direction in the second layer polarization pixel square matrix at the same position.
In the embodiment of the application, the arrangement mode and the pixel array type of the pixel array in the first layer of polarization pixel square matrix and the pixel array in the second layer of polarization pixel square matrix are the same, that is, a first preset direction of one pixel array arranged in the first layer is vertical to a second preset direction of one pixel array arranged in the second layer; the image sensor can acquire polarization signals of two orthogonal directions of one color channel through a laminated pixel array.
Optionally, the pixel array is RGGB, BGGR, GBRG, GRBG, or the like, and is specifically selected according to an actual situation, which is not specifically limited in the embodiment of the present application.
In this embodiment of the application, the preset directions may include four polarization directions of 0 °, 45 °, 90 °, and 135 °, and may be further refined according to an actual situation, which is not specifically limited in this embodiment of the application.
Illustratively, the polarization direction of the pixel array at position 1 in the first layer of polarized pixel square matrix is 0 °, and the polarization direction of the pixel array at the same position 1 in the second layer of polarized pixel square matrix is 90 °; the polarization direction of the pixel array at position 2 in the first layer of polarized pixel square matrix is 45 deg., and the polarization direction of the pixel array at the same position 2 in the second layer of polarized pixel square matrix is 135 deg..
In the embodiment of the present application, the pixel array includes photodiode PD pillars of three sizes, the PD pillars of three sizes are arranged according to the arrangement rule of the pixel array and the color arrangement mode corresponding to the pixel array, for example, when the pixel array is RGGB, the specification of the pixel array is 2 × 2, PD pillars for absorbing blue light are arranged at the (1, 1) position of the pixel, PD pillars for absorbing green light are arranged at the (1,2) and (2,1) positions of the pixel array, and PD pillars for absorbing red light are arranged at the (2,2) position of the pixel array.
In the embodiment of the application, the input end of each pixel unit in the first layer of polarization pixel square array is covered with a color filter, the color information of the color filter is determined by the RGB monochromatic light absorbed by the corresponding pixel unit, and the color filters on the pixel units form the color filter array because the pixel array is formed by a plurality of pixel units.
In the embodiment of the application, taking a color filter in a color filter matrix as an example, an imaging light signal emitted by a light source passes through the color filter, the color information of the color filter is filtered to filter out ultraviolet light, infrared light and other color stray light in the imaging light signal, so as to obtain RGB monochromatic light corresponding to the color filter, then the RGB monochromatic light passes through a first layer of pixel units corresponding to the position of the color filter in a first layer of polarization pixel matrix, the first layer of pixel units absorbs the RGB monochromatic polarized light polarized towards a first preset direction by using PD pillars polarized towards the first preset direction and having one size, then the remaining light passes through a second layer of pixel units corresponding to the position of the color filter in a second layer of polarization pixel matrix, the second layer of pixel units absorbs the RGB monochromatic polarized towards a second preset direction by using PD pillars polarized towards a second preset direction and having the same size as the first layer of pixel units, this results in RGB monochromatic polarized light in two orthogonal directions.
And S102, absorbing the RGB three-color light polarized in the second preset directions of the imaging light signal by using the pixel arrays polarized in the second preset directions of the second layer of polarized pixel square array, and converting the light signals corresponding to the RGB three-color light polarized in the second preset directions into electric signals corresponding to the RGB three-color light polarized in the second preset directions.
After the image sensor absorbs the RGB three-color light polarized in the first preset directions of the imaging light signal by using the plurality of pixel arrays of the first layer of polarized pixel matrix polarized in the first preset directions, converts the light signal corresponding to the RGB three-color light polarized in the first preset directions into the electric signal corresponding to the RGB three-color light polarized in the first preset directions, the image sensor absorbs the RGB three-color light polarized in the second preset directions of the imaging light signal by using the plurality of pixel arrays of the second layer of polarized pixel matrix polarized in the second preset directions, and converts the light signal corresponding to the RGB three-color light polarized in the second preset directions into the electric signal corresponding to the RGB three-color light polarized in the second preset directions.
S103, determining polarization information and color information of RGB three-color light by using an image processor; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.
When the image sensor absorbs an RGB monochromatic light by using a PD column of one size of the second layer polarization pixel matrix, and converts an optical signal corresponding to the RGB monochromatic light into an electrical signal corresponding to the RGB monochromatic light, the image sensor amplifies electrical signals corresponding to a plurality of RGB monochromatic lights polarized in the first preset direction and electrical signals corresponding to RGB monochromatic lights polarized in the second preset direction by using the CMOS pixel readout circuit, and reads electrical signals corresponding to the plurality of RGB monochromatic lights polarized in the first preset direction and electrical signals corresponding to the plurality of RGB monochromatic lights polarized in the second preset direction.
In an embodiment of the present application, the image sensor further includes: and the image sensor amplifies electric signals corresponding to the RGB three-color light polarized in the first preset direction and electric signals corresponding to the RGB three-color light polarized in the second preset direction by using the CMOS pixel reading circuit, and reads the electric signals corresponding to the RGB three-color light polarized in the first preset direction and the electric signals corresponding to the RGB three-color light polarized in the second preset direction.
In an embodiment of the present application, a CMOS pixel readout circuit includes: the transfer transistor is connected with the first layer of polarization pixel square matrix and the second layer of polarization pixel square matrix, the reading area is connected with the transfer transistor, and the amplifying tube is connected with the reading area; the image sensor transfers electric signals corresponding to the RGB three-color light polarized in the first preset direction and electric signals corresponding to the RGB three-color light polarized in the second preset direction to the reading area by using the transfer transistor; reading an electrical signal from a readout region; and amplifying the electric signal of the reading area by using an amplifying tube.
In the embodiment of the application, the image sensor converts the electric signals corresponding to the RGB three-color lights polarized in the first preset directions and the second preset directions into digital signals to obtain RAW data, and associates the RAW data in a preset association manner to obtain polarization information.
In the embodiment of the application, the CMOS pixel reading circuit converts the electric signal in the preset direction into a digital signal to obtain RAW data and transmits the RAW data to the image processor; the image processor correlates the RAW data through a preset correlation mode to obtain a polarization degree and a polarization direction, uses the polarization degree and the polarization direction as polarization information, performs color recovery on the RAW data according to a preset color recovery method to obtain color information, and obtains a polarization image according to the polarization information and the color information.
In the embodiment of the present application, the readout circuit converts the electrical signal in the preset direction into a Digital signal by using an Analog-to-Digital Converter (ADC).
In this application embodiment, predetermine the associated mode and can be the mode of vector addition, the reading circuit carries out the vector addition through the signal of telecommunication with predetermineeing the direction, and then obtains the polarization degree and the polarization direction of formation of image light signal, and later, the reading circuit filters the reflected light and the transmitted light of different polarization, and then determines the material attribute of shooting the object, can provide clearer image from this.
It can be understood that the image sensor is provided with a first layer polarization pixel square matrix and a second layer polarization pixel square matrix, the first layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of first preset directions, and the second layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of second preset directions, so that each pixel can acquire two orthogonal polarization information, and the utilization rate of the pixel polarization information is improved.
EXAMPLE III
The present embodiment provides a storage medium having a computer program stored thereon, where the computer program is stored in one or more programs, where the one or more programs are executable by one or more processors and are applied to an image sensor 1, where the image sensor includes a color polarization stacked pixel matrix composed of a first layer polarization pixel matrix and a second layer polarization pixel matrix, the first layer polarization pixel matrix includes a plurality of pixel arrays polarized to a plurality of first preset directions, the second layer polarization pixel matrix includes a plurality of pixel arrays polarized to a plurality of second preset directions, and the pixel arrays include photodiode PD columns of three sizes, and the computer program implements the image processing method according to the second embodiment.
Specifically, the program instructions corresponding to an image processing method in the present embodiment, when read or executed by an electronic device, include the steps of:
absorbing the RGB three-color light polarized in the first preset directions of the imaging light signals by utilizing a plurality of pixel arrays of the first layer of polarized pixel square array polarized in the first preset directions, and converting the light signals corresponding to the RGB three-color light polarized in the first preset directions into electric signals corresponding to the RGB three-color light polarized in the first preset directions;
absorbing the RGB three-color light polarized in the second preset directions of the imaging light signals by utilizing a plurality of pixel arrays of the second layer of polarized pixel square array polarized in the second preset directions, and converting the light signals corresponding to the RGB three-color light polarized in the second preset directions into electric signals corresponding to the RGB three-color light polarized in the second preset directions;
determining the polarization information and the color information of the RGB three-color light by using the image processor; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.
In an embodiment of the present invention, further, the image sensor further includes: a CMOS pixel readout circuit; the output end of the color polarization laminated pixel array is connected with the image processor through a CMOS pixel reading circuit; after the optical signals corresponding to the RGB three-color lights polarized in the second preset direction are converted into the electrical signals corresponding to the RGB three-color lights polarized in the second preset direction, the one or more programs are executed by the one or more processors, and the following steps are further implemented:
and amplifying electric signals corresponding to the RGB three-color light polarized in the first preset directions and electric signals corresponding to the RGB three-color light polarized in the second preset directions by using the CMOS pixel reading circuit, and reading the electric signals corresponding to the RGB three-color light polarized in the first preset directions and the electric signals corresponding to the RGB three-color light polarized in the second preset directions.
The above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the present application.

Claims (12)

1. An image sensor, comprising:
the color polarization laminated pixel array comprises a first layer of polarization pixel array and a second layer of polarization pixel array, wherein the first layer of polarization pixel array comprises a plurality of pixel arrays polarized towards a plurality of first preset directions, one first preset direction corresponds to one pixel array, the second layer of polarization pixel array comprises a plurality of pixel arrays polarized towards a plurality of second preset directions, one second preset direction corresponds to one pixel array, the first preset direction is orthogonal to the corresponding second preset direction, the pixel arrays comprise photodiode PD columns with three sizes, PD columns with the same size are arranged at the corresponding positions of the first layer of polarization pixel array and the second layer of polarization pixel array, the color polarization laminated pixel array respectively absorbs RGB three-color light polarized in the plurality of first preset directions and the plurality of second preset directions by utilizing the PD columns with three sizes, the PD columns with the three sizes are arranged in the pixel array according to the arrangement rule of the pixel array in a color arrangement mode corresponding to the pixel array;
the image processor is connected with the output end of the color polarization laminated pixel square array and is used for determining polarization information and color information by utilizing the RGB three-color light; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.
2. The image sensor of claim 1, wherein the one pixel array comprises a plurality of pixel units, and one of the three sizes of PD pillars corresponds to at least one of the plurality of pixel units, wherein one pixel unit comprises a group of PD pillars of the same size;
one pixel unit absorbs corresponding RGB monochromatic light by using a group of PD columns of the same size.
3. The image sensor of claim 1 or 2, further comprising a color filter array overlying an input end of the first layer of the square matrix of polarized pixels; wherein the color filter array has the same color arrangement as the pixel array in the first layer of polarization pixel square array;
the color filter array is used for filtering RGB three-color light corresponding to the color information of the color filter array from the imaging light signal.
4. The image sensor of claim 1, further comprising: a CMOS pixel readout circuit; the output end of the color polarization laminated pixel array is connected with the image processor through a CMOS pixel reading circuit;
the color polarization laminated pixel square matrix is also used for converting optical signals corresponding to RGB three-color light into corresponding electric signals;
the CMOS pixel readout circuit is used for amplifying the electric signals and reading out the image processor.
5. The image sensor of claim 4, wherein the first layer of the square array of polarized pixels further comprises a plurality of sets of transfer gate connection circuits, wherein one set of transfer gate circuits corresponds to one of the first layer of the square array of polarized pixels, the plurality of sets of transfer gate connection circuits respectively pass through the second layer of the square array of polarized pixels, and the plurality of pixel arrays in the first layer of the square array of polarized pixels are connected to the CMOS pixel readout circuit through the plurality of sets of transfer gate connection circuits.
6. The image sensor of claim 3, wherein one pixel unit corresponds to one n-region; the electric signals of the corresponding RGB monochromatic light absorbed by one pixel unit are concentrated to a corresponding n area.
7. The image sensor of claim 3, wherein the distance between two adjacent PD pillars is a preset distance, the number of PD pillars corresponding to one pixel unit in the first layer polarization pixel square array is determined by the size of one pixel unit and the preset distance, and the number of PD pillars corresponding to one pixel unit in the second layer polarization pixel square array is determined by the size of the transfer gate connection circuit, the size of one pixel unit and the preset distance.
8. The image sensor of claim 4, wherein the CMOS pixel readout circuit comprises: the pixel array comprises a transfer transistor connected with the color polarization laminated pixel array, a reading area connected with the transfer transistor and an amplifying tube connected with the reading area;
the transfer transistor is used for transferring the electric signals corresponding to the RGB three-color light to a readout area so as to read the electric signals from the readout area;
the amplifying tube is used for amplifying the electric signal of the readout region.
9. The image sensor of claim 8, wherein the CMOS pixel readout circuit further comprises: a reset transistor connected to the readout region and the amplifying transistor;
the readout region is also used for reading out a reset level in the reset transistor;
the amplifying tube is also used for amplifying the reset level.
10. An image processing method is applied to an image sensor, the image sensor comprises a color polarization laminated pixel square matrix and an image processor, the color polarization laminated pixel square matrix is composed of a first layer polarization pixel square matrix and a second layer polarization pixel square matrix, the first layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of first preset directions, the second layer polarization pixel square matrix comprises a plurality of pixel arrays polarized to a plurality of second preset directions, the pixel arrays comprise photodiode PD columns with three sizes, the first preset directions are orthogonal to the corresponding second preset directions, the PD columns with three sizes are arranged in the pixel arrays according to the arrangement rule of colors corresponding to the pixel arrays, and the method comprises the following steps:
absorbing the RGB three-color light polarized in the first preset directions of the imaging light signals by utilizing a plurality of pixel arrays of the first layer of polarized pixel square array polarized in the first preset directions, and converting the light signals corresponding to the RGB three-color light polarized in the first preset directions into electric signals corresponding to the RGB three-color light polarized in the first preset directions;
absorbing the RGB three-color light polarized in the second preset directions of the imaging light signals by utilizing a plurality of pixel arrays of the second layer of polarized pixel square array polarized in the second preset directions, and converting the light signals corresponding to the RGB three-color light polarized in the second preset directions into electric signals corresponding to the RGB three-color light polarized in the second preset directions;
determining the polarization information and the color information of the RGB three-color light by using the image processor; and obtaining a color polarization image corresponding to the imaging optical signal based on the polarization information and the color information.
11. The method of claim 10, wherein the image sensor further comprises: a CMOS pixel readout circuit; the output end of the color polarization laminated pixel array is connected with the image processor through a CMOS pixel reading circuit; after the converting the optical signals corresponding to the RGB three-color light polarized in the second preset direction into the electrical signals corresponding to the RGB three-color light polarized in the second preset direction, the method further includes:
and amplifying electric signals corresponding to the RGB three-color light polarized in the first preset directions and electric signals corresponding to the RGB three-color light polarized in the second preset directions by using the CMOS pixel reading circuit, and reading the electric signals corresponding to the RGB three-color light polarized in the first preset directions and the electric signals corresponding to the RGB three-color light polarized in the second preset directions.
12. A storage medium on which a computer program is stored for application to an image sensor, characterized in that the computer program, when being executed by a processor, carries out the method according to any one of claims 10-11.
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