CN111221222A - Method for exposing i-line SU8 series photoresist by using h-line laser direct writing machine - Google Patents

Method for exposing i-line SU8 series photoresist by using h-line laser direct writing machine Download PDF

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Publication number
CN111221222A
CN111221222A CN201911203985.7A CN201911203985A CN111221222A CN 111221222 A CN111221222 A CN 111221222A CN 201911203985 A CN201911203985 A CN 201911203985A CN 111221222 A CN111221222 A CN 111221222A
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China
Prior art keywords
line
photoresist
laser direct
exposure
writing machine
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CN201911203985.7A
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Chinese (zh)
Inventor
谭稀
史鑫
强进
高晓平
卢启海
王向谦
宋玉哲
韩根亮
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INSTITUTE OF SENSOR TECHNOLOGY GANSU ACADEMY OF SCIENCE
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INSTITUTE OF SENSOR TECHNOLOGY GANSU ACADEMY OF SCIENCE
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Priority to CN201911203985.7A priority Critical patent/CN111221222A/en
Publication of CN111221222A publication Critical patent/CN111221222A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Abstract

The invention discloses a method for exposing i-line SU8 series photoresist by using an h-line laser direct writing machine, belonging to the field of semiconductors. The method comprises the following steps: coating SU8 series photoresist on the substrate covered with the functional layer, wherein the photoresist completely covers the whole functional layer surface; carrying out a pre-exposure baking process on the sample coated with the SU8 series photoresist; placing the baked sample on a sample table of a laser direct writing machine, setting exposure conditions, and carrying out multiple exposure on SU8 series photoresist; the SU8 series photoresist after multiple exposures was developed. The method has simple process steps, shortens the period of scientific research and development, saves the development cost, and is safe and reliable.

Description

Method for exposing i-line SU8 series photoresist by using h-line laser direct writing machine
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a method for exposing an i-line SU8 series photoresist by using an h-line laser direct writing machine.
Background
The MEMS sensor relates to various subjects and technologies such as electronics, mechanics, physics, biology and the like, has wide prospects, and therefore the development is rapid in recent years. With the development of MEMS sensors, the demand for MEMS technology is also increasing.
MEMS (micro electro mechanical systems) processes have been developed on the basis of semiconductor processes, but there are incompatibilities. The typical MEMS process flow is as follows: cleaning, spin coating, pre-baking, photoetching, developing, film hardening, ion beam etching/depositing and photoresist removing. Especially the photolithography process is the most critical.
Lithography machines are often classified into two categories according to the exposure mode: an exposure machine and a laser direct-writing machine. Exposure machines are commonly used in industrial production, and laser direct writing machines are used in scientific research institutes. The laser direct writing machine is divided into three types by the corresponding light source: 365nm i-line direct-writing machine, 405nm h-line direct-writing machine and 436nm g-line direct-writing machine. The three direct-writing machines have advantages and disadvantages, most of the mechanisms only contain one of the machines, and the energy of the h-line direct-writing machine and the g-line direct-writing machine is lower than that of the i-line direct-writing machine, so that the photoetching process of part of i-line photoresist cannot be completed in a laboratory only provided with the h-line direct-writing machine and the g-line direct-writing machine.
The variety of photoresists is great and SU8 photoresist is a widely used type of MEMS photoresist. The SU8 photoresist has many excellent properties, and can be used for manufacturing MEMS microstructures with the thickness of hundreds of nm to 1000nm and the aspect ratio of 50, and the advantages just meet the requirements of the MEMS field.
SU8 photoresist is a near ultraviolet photoresist, especially i-line. When the energy of the direct-write machine is lower than that of the i-line direct-write machine, the direct-write machine cannot be photoetched and successfully developed.
Disclosure of Invention
The invention aims to provide a method for realizing exposure and successful development of i-line SU8 series photoresist by using a multi-time photoetching method for an h-line laser direct writing machine.
The technical scheme of the invention is as follows: a method for performing exposure of i-line SU8 series photoresist by using an h-line laser direct writing machine comprises the following steps:
(a) coating SU8 series photoresist on the substrate covered with the functional layer, wherein the photoresist completely covers the whole functional layer surface;
(b) carrying out a pre-exposure baking process on the sample coated with the SU8 series photoresist;
(c) placing the baked sample on a sample table of a laser direct writing machine, setting exposure conditions, and carrying out multiple exposure on SU8 series photoresist;
(d) the SU8 series photoresist after multiple exposures was developed.
Further, the exposure times are 25-35 times.
Further, the SU8 series photoresist is SU8-1030 or SU 8-1040.
Further, the laser direct writing machine is DWL66+ of Heidelberg, Germany.
Further, the step d utilizes an h-line laser direct writing machine with the wavelength of 405nm to realize the photoetching development of the i-line SU8 photoresist with the required light source wavelength of 365 nm.
The invention focuses on the key technology: and (6) photoetching. The SU8 series photoresist has the excellent properties of wide thickness range, high aspect ratio and the like, so that the photoresist is widely applied to the fields of semiconductors and MEMS. However, SU8 is an I-line photoresist, and the exposure wavelength of the corresponding lithography machine needs to reach 365nm, which is the highest energy, and the exposure can be performed only by the I-line lithography machine. According to the invention, the i-line SU8 photoresist is subjected to multiple in-situ exposures (25-35 times) by using an h-line laser direct writing machine, and finally, a photoetching pattern is developed successfully after the final exposure.
The invention has the following advantages: in a laboratory equipped with only an h-line laser direct writing machine, exposure and development of an i-line SU8 series photoresist were completed by repeating photolithography for a plurality of times. The whole design process has simple steps, shortens the period of scientific research and development, saves the development cost, and is safe and reliable.
Drawings
FIG. 1 is a schematic flow diagram of the process of the present invention;
FIG. 2 is a schematic cross-sectional view of a sample used in the present invention before lithography;
FIG. 3 is a schematic cross-sectional view of a sample photolithography process used in the present invention;
FIG. 4 is a schematic cross-sectional view of a sample used in the present invention after photolithography.
Detailed Description
The method for realizing exposure of i-line SU8 series photoresist by multiple times of lithography of the h-line laser direct writing machine according to the present invention is further described below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It should be noted that the drawings are in a simplified form to facilitate the description of the embodiments.
The laser direct-write machine in the examples is DWL66+ from heidelberg, germany.
Example 1
As shown in fig. 1, the method for realizing exposure of i-line SU8 series photoresist by multiple times of photolithography with an h-line laser direct writing machine includes:
a. coating SU8 series photoresist on the substrate covered with the functional layer, wherein the photoresist completely covers the whole functional layer surface;
b. the samples coated with SU8 series photoresist were subjected to a pre-exposure bake process (using existing processes) on a hot plate. The process is carried out on a hot plate, firstly, the temperature is slowly increased to 65 ℃ from 20 ℃, the temperature is kept constant at 65 ℃ for 10min, the temperature is continuously and slowly increased to 95 ℃, and the temperature is kept constant at 95 ℃ for 15 min;
c. placing the baked sample on a sample table of a laser direct writing machine, setting exposure conditions, and carrying out multiple exposure on SU8 series photoresist;
d. the SU8 series photoresist after multiple exposures was developed. And (3) realizing the photoetching development of the i-line SU8 photoresist with the required light source wavelength of 365nm by using an h-line laser direct writing machine with the wavelength of 405 nm.
Specifically, please refer to fig. 2-4 in combination, which are schematic cross-sectional views of devices formed by exposure of i-line SU8 series photoresist by multiple times of photolithography with an h-line laser direct writing machine according to an embodiment of the present invention.
As shown in FIG. 2, a photoresist is coated on a substrate 1 with a functional layer 2 deposited on the surfaceAnd 3, the photoresist 3 completely covers the surface of the functional layer 2. The substrate material 1 may be a silicon, germanium, silicon germanium substrate, a iii-v compound substrate, or other commonly used semiconductor or MEMS substrate. In the present embodiment, a silicon substrate is used. The spin coating process conditions are consistent with the process conditions used for normal one-time exposure of SU8 series photoresists: after static gluing, firstly, slowly accelerating to 3000rpm/s from 1rpm/s, keeping the rotating speed of 3000rpm/s constant for 40s, slowly decelerating to 1rpm/s from 3000rpm/s, wherein the acceleration and deceleration acceleration are both 100rpm/s2。
The functional layer 2 may be a metal layer, a non-metal layer, or a composite multi-layer structure formed by non-metal layers of metal layers, or may not have the functional layer, and the photoresist 3 is directly covered on the substrate 1. In this example, a GMR magnetic multilayer film is used.
The photoresist 3 is one of i-line SU8 series photoresists that have not been exposed to light. In this example, SU8-1030 is used.
Next, as shown in fig. 3, a laser direct writing machine with a light source of 405nm is selected to expose a specific region of the photoresist 3 subjected to the pre-baking process for multiple times. Specifically, in the exposure process of the photoresist 3, the exposure energy used is set to be the maximum, and the number of exposures used is 25, so that the photoresist 3 in the specific region to be exposed and the light source 4 are fully reacted. In this example, the laser writer used was Heidelberg DWL66 +.
Meanwhile, in the embodiment, there is no obstacle between the exit of the light source 4 of the laser direct-writing machine and the photoresist 3, that is, the photoresist 3 can receive the light from the direct-writing machine without blocking, and finally the exposure is sufficient.
Next, as shown in fig. 4, the exposed photoresist 3 is developed, the photoresist in the specific region exposed in 2b is retained, and the photoresist in the other region not exposed is dissolved in the developing solution. The developing solution is consistent with the developing solution used by the SU8 photoresist in normal one-time exposure, and the developing condition is also consistent.
Example 2
The difference from the embodiment 1 is that: the number of exposures used was 30. Photoresist 3 employs SU 8-1040.
Example 3
The difference from the embodiment 1 is that: the number of exposures used was 35.
The invention adopts the exposure times of 25-35 times, because the exposure times can be realized only by more than 25 times, the effect is better between 25-35 times, the effect is not good after the development because of more than 35 times of exposure, and no image is shown after the development because of less than 25 times of exposure, which indicates that the exposure is unsuccessful
According to the invention, the i-line SU8 series photoresist is exposed for multiple times by using the h-line laser direct writing machine, and finally, the development is successful. The defect that the light source energy of the h-line laser direct writing machine is too small to fully expose i-line SU8 photoresist is overcome, the scientific research and development period is shortened, the production cost is reduced, and the method is safe and reliable.

Claims (5)

1. A method for performing exposure of i-line SU8 series photoresist by using an h-line laser direct writing machine is characterized by comprising the following steps:
coating SU8 series photoresist on the substrate covered with the functional layer, wherein the photoresist completely covers the whole functional layer surface;
carrying out a pre-exposure baking process on the sample coated with the SU8 series photoresist;
placing the baked sample on a sample table of a laser direct writing machine, setting exposure conditions, and carrying out multiple exposure on SU8 series photoresist;
the SU8 series photoresist after multiple exposures was developed.
2. The method for i-line SU8 series photoresist exposure using an h-line laser direct write machine according to claim 1, wherein: the number of exposures is 25-35.
3. The method for performing exposure of i-line SU8 series photoresist by using h-line laser direct writing machine according to claim 1 or 2, wherein the SU8 series photoresist is SU8-1030 or SU 8-1040.
4. A method of i-line SU8 series photoresist exposure using an h-line laser direct write machine according to claim 3, wherein the laser direct write machine is DWL66+ from heidelberg, germany.
5. The method for performing exposure of i-line SU8 series photoresist by using h-line laser direct writing machine according to claim 4, wherein the step d uses the h-line laser direct writing machine with wavelength of 405nm to realize the photolithography development of i-line SU8 photoresist with required light source wavelength of 365 nm.
CN201911203985.7A 2019-11-29 2019-11-29 Method for exposing i-line SU8 series photoresist by using h-line laser direct writing machine Pending CN111221222A (en)

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CN201911203985.7A CN111221222A (en) 2019-11-29 2019-11-29 Method for exposing i-line SU8 series photoresist by using h-line laser direct writing machine

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1906540A (en) * 2003-12-11 2007-01-31 伯明翰大学 Improved lithographic process
US8574821B1 (en) * 2011-12-21 2013-11-05 The United States Of America As Represented By The Secretary Of The Air Force MEMS fabrication process base on SU-8 masking layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1906540A (en) * 2003-12-11 2007-01-31 伯明翰大学 Improved lithographic process
US8574821B1 (en) * 2011-12-21 2013-11-05 The United States Of America As Represented By The Secretary Of The Air Force MEMS fabrication process base on SU-8 masking layers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
马日红: "基于SU-8紫外光刻工艺的直流微电铸技术研究", 《中国优秀博硕士学位论文全文数据库(硕士) 工程科技Ⅰ辑 (月刊)》 *

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