CN111211078A - Wafer calibration device and method and wafer edge etching equipment and method - Google Patents
Wafer calibration device and method and wafer edge etching equipment and method Download PDFInfo
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- CN111211078A CN111211078A CN202010036405.6A CN202010036405A CN111211078A CN 111211078 A CN111211078 A CN 111211078A CN 202010036405 A CN202010036405 A CN 202010036405A CN 111211078 A CN111211078 A CN 111211078A
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 230000008569 process Effects 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 226
- 230000007717 exclusion Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
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- 239000002184 metal Substances 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
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- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
The invention provides a wafer calibration device and method and a wafer edge etching device and method, wherein the wafer calibration device is used for coaxially placing a wafer on the top of a cylindrical bearing table according to a set coaxiality tolerance, and the diameter of the bearing table is smaller than that of the wafer, and the device comprises: the upper part of the inner ring of the calibration ring is provided with a conical hole with a small end facing downwards and coaxially arranged with the bearing platform, the small end of the conical hole is provided with a cylindrical hole coaxially arranged with the conical hole, and the diameter of the cylindrical hole is equal to the sum of the diameter of the wafer and the set coaxiality tolerance; the lower part of the cylindrical hole is provided with a wafer bearing surface, and the middle part of the wafer bearing surface is provided with a channel which allows the bearing platform to pass through but does not allow the wafer to pass through; the calibration ring can be vertically and linearly moved and sleeved outside the bearing table, and the cylindrical hole and the bearing table are coaxially arranged. The wafer calibration device and method and the wafer edge etching equipment and method can ensure the coaxiality requirement between the wafer and the bearing platform through the size of the cylindrical hole.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a wafer calibration device and method and wafer edge etching equipment and method.
Background
During wafer processing, films deposited on the wafer are often etched by plasma gases. Generally, the lower the etch plasma density is near the wafer edge, which can cause polysilicon, nitride, metal layers, etc. (collectively referred to as excess film layers) to build up on the wafer edge. In order to prevent the redundant film layer from polluting subsequent processes and equipment, the edge of the wafer is often required to be etched to remove the redundant film layer.
In the existing wafer edge etcher, the main etcher is to place the wafer (wafer) in the middle of the reaction chamber. When the plasma Exclusion Zone (PEZ Process Exclusion Zone) ring is lowered to a height of 0.4mm away from the wafer, gas is introduced into the edge of the cavity, and radio frequency generated plasma gas (plasma) is added to remove the redundant film (film) on the edge.
The wafer edge etching machine mostly places the wafer in the middle of a cylindrical bearing table (plate), and leaks 0.1 mm-0.5 mm of the edge of the wafer into a space of plasma gas for reactive etching. However, the wafer is placed on the circular platform at a position depending on the wafer transfer position, and the coaxiality between the wafer and the circular platform cannot be effectively guaranteed. When the transmission generates deviation, the etched area of the wafer edge is changed along with the deviation, the bevel edge (level) etching amount cannot be guaranteed to be kept at the optimal position, and whether the wafer is coaxial with the bearing table is judged mainly by monitoring the etching rate of the edge at present, which is a process discovered afterwards, and the active alignment and placement of the coaxiality cannot be carried out before the wafer edge is etched.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a wafer alignment apparatus and method, and a wafer edge etching apparatus and method, which are used to solve the problem of poor coaxiality of wafers placed on a cylindrical susceptor in the prior art.
To achieve the above and other related objects, a first aspect of the present invention provides a wafer alignment apparatus for coaxially placing a wafer on top of a cylindrical susceptor having a diameter smaller than a diameter of the wafer with a set coaxiality tolerance, the apparatus comprising:
the upper part of the inner ring of the calibration ring is provided with a conical hole with a small end facing downwards and coaxially arranged with the bearing platform, the small end of the conical hole is provided with a cylindrical hole coaxially arranged with the conical hole, and the diameter of the cylindrical hole is equal to the sum of the diameter of the wafer and the set coaxiality tolerance; a wafer bearing surface is arranged at the lower part of the cylindrical hole, and a channel allowing the bearing table to pass through but not allowing the wafer to pass through is formed in the middle of the wafer bearing surface; the calibration ring can be sleeved outside the bearing table in a vertically linear moving mode, and the cylindrical hole and the bearing table are coaxially arranged;
and the driving device drives the calibration ring to move up and down so that the wafer bearing surface can move back and forth between the upper part and the lower part of the top surface of the bearing table.
As an alternative of the invention, the set coaxiality tolerance is 0.1-0.5 mm.
As an alternative of the present invention, the wafer support surface is a circular ring-shaped step surface.
As an alternative of the invention, the taper angle of the conical hole is 80-140 degrees.
As an alternative of the invention, the calibration ring is made of ceramic or glass.
As an alternative of the invention, the drive means comprise a plurality of cylinders which can be actuated synchronously, the telescopic spindles of which extend upwards and are connected to the calibration ring.
As an alternative of the invention, the driving device comprises a jacking frame and at least one cylinder, at least three ejector rods are arranged on the jacking frame, the at least three ejector rods extend upwards and are connected with the calibration ring, and a telescopic main shaft of the at least one cylinder pushes the jacking frame to move up and down.
As an alternative of the invention, the bearing table is mounted on a support, a guide sleeve matched with the ejector rod or the telescopic main shaft is arranged on the support, and the upper end of the ejector rod or the telescopic main shaft extends out of the guide sleeve and is connected with the calibration ring.
All the alternatives are given above as examples of the invention, and in other embodiments, the invention is not limited thereto.
A second aspect of the present invention provides a wafer edge etching apparatus, including: the device comprises a radio frequency power source, a reaction chamber, a bearing table and a moving assembly; the bearing table is arranged in the reaction chamber and comprises a lower electrode and a lower plasma forbidden zone ring surrounding the edge of the lower electrode, and the outer diameter of the lower plasma forbidden zone ring is smaller than the diameter of a wafer to be placed; the moving assembly can be installed at the upper part of the reaction chamber in a way of moving up and down; the moving assembly comprises opposite cylindrical upper electrodes and an upper plasma forbidden zone ring surrounding the edges of the upper electrodes;
the wafer edge etching equipment further comprises any one of the wafer calibration devices, wherein the wafer calibration device comprises a wafer edge etching device body;
the calibration ring of the wafer calibration device can be vertically and linearly sleeved outside the lower plasma forbidden zone ring in a moving mode, and the cylindrical hole and the lower plasma forbidden zone ring are coaxially arranged.
As an alternative of the present invention, the driving device of the wafer calibration apparatus includes a plurality of cylinders capable of acting synchronously, the cylinders of the plurality of cylinders are disposed outside the reaction chamber, the telescopic main shaft of the cylinder extends upwards into the reaction chamber and is connected to the calibration ring, and a sealing structure is disposed between the telescopic main shaft and the wall body of the reaction chamber.
As an alternative of the invention, the driving device of the wafer calibration device includes a jacking frame and at least one cylinder, the jacking frame is provided with at least three ejector rods, the at least three ejector rods extend upwards into the reaction chamber and are connected with the calibration ring, a sealing structure is arranged between the ejector rods and a wall body of the reaction chamber, and a telescopic main shaft of the at least one cylinder pushes the jacking frame to move up and down.
As an alternative of the invention, the bearing table is mounted on a support, a guide sleeve matched with the ejector rod or the telescopic main shaft is arranged on the support, and the upper end of the ejector rod or the telescopic main shaft extends out of the guide sleeve and is connected with the calibration ring.
As an alternative of the present invention, a thimble assembly for supporting the wafer is further disposed on the lower electrode.
The third aspect of the present invention provides an automatic calibration method for coaxiality of a wafer, which is used for coaxially placing the wafer on the top of a cylindrical bearing table according to a set coaxiality tolerance, wherein the diameter of the bearing table is smaller than that of the wafer, and the method comprises the following steps:
setting a calibration ring;
a conical hole with a downward small end is arranged at the upper part of the inner hole of the calibration ring;
arranging a cylindrical hole coaxial with the conical hole at the small end of the conical hole, and enabling the diameter of the cylindrical hole to be equal to the sum of the diameter of the wafer and the set coaxiality tolerance;
a wafer bearing surface is arranged at the lower part of the cylindrical hole;
a channel which allows the bearing table to pass through but does not allow the wafer to pass through is arranged in the middle of the wafer bearing surface;
the calibration ring can be sleeved outside the bearing table in a vertically linear moving mode, and the cylindrical hole and the bearing table are coaxially arranged;
and the wafer falls onto the wafer bearing surface through the conical hole and then is placed on the bearing platform along with the descending of the calibration ring.
As an alternative of the invention, the calibration ring is driven up and down by at least one cylinder.
As an alternative of the present invention, the susceptor is provided with a thimble assembly, and the process of dropping the wafer onto the wafer supporting surface through the conical hole and then placing the wafer on the susceptor along with the descending of the calibration ring includes:
the wafer is conveyed to the upper part of the bearing table;
the thimble assembly is lifted to support the wafer;
the calibration ring rises to enable the wafer to enter the conical hole;
the thimble assembly descends below the bearing table;
the calibration ring is lowered until the wafer is placed on the susceptor.
As an alternative of the present invention, the process of dropping the wafer onto the wafer supporting surface through the conical hole and then placing the wafer on the susceptor along with the descending of the calibration ring comprises:
the wafer is directly conveyed to the bearing table;
lifting the calibration ring to enable the conical hole to lift the wafer;
the wafer falls onto a wafer bearing surface in the cylindrical hole through the conical hole;
the calibration ring is lowered until the wafer is placed on the susceptor.
As an alternative of the present invention, the process of dropping the wafer onto the wafer supporting surface through the conical hole and then placing the wafer on the susceptor along with the descending of the calibration ring comprises:
the wafer is conveyed to the upper part of the bearing table;
lifting the calibration ring to enable the conical hole to lift the wafer;
the wafer falls onto a wafer bearing surface in the cylindrical hole through the conical hole;
the calibration ring is lowered until the wafer is placed on the susceptor.
As an alternative of the invention, the taper angle of the conical hole is set to be 80-140 degrees.
The fourth aspect of the invention provides a method for etching the edge of a wafer, wherein the edge of the wafer is etched by placing the wafer on the top of a cylindrical bearing table in a reaction chamber, and the edge of the wafer is etched after the wafer is coaxially placed on the top of the cylindrical bearing table according to a set coaxiality tolerance by adopting any one of the automatic calibration methods for the coaxiality of the wafer.
As described above, the present invention provides a wafer calibration apparatus and method, in which a calibration ring having a conical hole and a cylindrical hole is provided, a wafer falls into the cylindrical hole after being centered by the conical hole in the process of movement of the calibration ring, and continues to descend along with the calibration ring until a wafer bearing surface falls below the top surface of a susceptor, the wafer is placed on the top surface of the susceptor by the calibration ring, and the requirement for coaxiality between the wafer and the susceptor can be ensured by the size of the cylindrical hole, thereby providing a strong guarantee for a subsequent processing process. The yield of subsequent processing is improved.
According to the wafer edge etching equipment and the wafer edge etching method, the wafer is coaxially placed on the lower bearing table according to the set coaxiality tolerance through the wafer calibration device, the coaxiality of the wafer and the upper and lower plasma forbidden zone rings can be effectively ensured, and the edge etching yield of the wafer can be effectively ensured.
Drawings
FIG. 1 is a schematic structural diagram of a wafer alignment apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a calibration ring of the wafer calibration apparatus of the present invention;
FIG. 3 is a schematic structural diagram of a wafer alignment apparatus according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a wafer edge etching apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a wafer edge etching apparatus according to another embodiment of the present invention;
FIG. 6 is a schematic flowchart illustrating an embodiment of a method for automatically calibrating a coaxiality of a wafer according to the present invention;
FIG. 7 is a flowchart illustrating an exemplary embodiment of a method for automatically calibrating the coaxiality of a wafer according to the present invention;
FIG. 8 is a schematic flowchart illustrating a method for automatically calibrating the coaxiality of a wafer according to another embodiment of the present invention;
FIG. 9 is a flow chart illustrating a method for wafer edge etching according to the present invention.
Description of the element reference numerals
10 wafer calibration device
110 calibration ring
111 taper hole
112 cylindrical hole
113 wafer support surface
114 channel
120 driving device
121 jacking frame
1211 ejector pin
122 cylinder
20 bearing table
201 lower electrode
202 lower plasma forbidden zone ring
203 support
30 wafer
40 moving assembly
401 upper electrode
402 upper plasma forbidden zone ring
50 reaction chamber
60 ejector pin component
70 sealing structure
80 guide sleeve
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Please refer to fig. 1-2. The invention provides a wafer calibration device 10, which is used for coaxially placing a wafer 30 on the top of a cylindrical bearing table 20 according to a set coaxiality tolerance, wherein the diameter of the bearing table 20 is smaller than that of the wafer 30, and the wafer calibration device 10 comprises:
the upper part of the inner ring of the calibration ring 110 is provided with a conical hole 111 with a small end facing downwards and coaxially arranged with the bearing platform 20, the small end of the conical hole 111 is provided with a cylindrical hole 112 coaxially arranged with the conical hole 111, and the diameter D1 of the cylindrical hole 112 is equal to the sum of the diameter of the wafer 30 and the set coaxiality tolerance; a wafer bearing surface 113 is arranged at the lower part of the cylindrical hole 112, and a channel 114 allowing the bearing table 20 to pass through but not allowing the wafer 30 to pass through is formed in the middle of the wafer bearing surface 113; the calibration ring 110 can be vertically and linearly sleeved outside the bearing table 20, and the cylindrical hole 112 is coaxially arranged with the bearing table 20;
a driving device 120, wherein the driving device 120 drives the calibration ring 110 to move up and down to move the wafer supporting surface 113 back and forth between above and below the top surface of the susceptor 20.
The wafer calibration device 10 of the present invention is provided with a calibration ring 110 having a conical hole 111 and a cylindrical hole 112, wherein the wafer 30 falls on a wafer bearing surface 113 in the cylindrical hole 112 after being centered by the conical hole 111 in the moving process of the calibration ring 110, and continues to descend along with the calibration ring 110 until the wafer bearing surface 113 falls below the top surface of the susceptor 20, and the wafer 30 is placed on the top surface of the susceptor 20 by the calibration ring 110. The wafer calibration device can ensure the coaxiality requirement between the wafer 30 and the bearing platform 20 through the size of the cylindrical hole 112, thereby providing powerful guarantee for the subsequent processing technology. The yield of subsequent processing is improved.
The coaxiality tolerance set in the present invention may be any tolerance value set according to needs, and according to the coaxiality requirements of the existing processing technologies of most wafers 30, as an embodiment of the present invention, the coaxiality tolerance set in this embodiment is 0.1-0.5 mm.
In the present invention, the wafer supporting surface 113 may be any structure capable of supporting the wafer 30, and in consideration of the convenience of processing and the simplicity of the structure, as an embodiment of the present invention, the wafer supporting surface 113 is a circular step surface in this embodiment, and the channel 114 is a cylindrical through hole (in other embodiments, the through hole may be an irregular hole as long as the wafer can pass through the susceptor and the wafer cannot pass through the susceptor), and the diameter D2 is greater than the diameter of the susceptor 20 and smaller than the diameter of the wafer 30. In other embodiments, the wafer supporting surface 113 may be a discontinuous circular ring, may be fixed by only a few supporting points, may also be a conical surface, and the specific shape thereof is not limited.
The taper angle of the conical hole 111 in the present invention may be any angle capable of enabling the wafer 30 to slide down, but considering that the same taper angle with a larger end and a smaller diameter requires a higher thickness, and the larger taper angle is not beneficial to the wafer 30 sliding down during the movement of the calibration ring 110, the taper angle α of the conical hole 111 in the present invention is preferably any value of 80 to 140 °, such as 80 °, 100 °, 120 °, and 140 °, and in this embodiment, 120 °.
Considering that most conventional wafer 30 processes are performed in a corrosive environment, the calibration ring 110 is made of ceramic in this embodiment as an embodiment of the present invention. In other embodiments, the material of the calibration ring is not limited, and may be, for example, glass, metal, plastic, etc.
The driving device 120 of the present invention may be any driving structure capable of pushing the calibration ring 110 to move up and down linearly, such as a hydraulic cylinder, an air cylinder, a screw nut assembly, etc., and considering that the cleanliness of the air cylinder is high, as an embodiment of the present invention, the driving device 120 in this embodiment includes a plurality of (at least three) air cylinders capable of acting synchronously, and the telescopic main shafts of the plurality of air cylinders extend upward and are connected to the calibration ring 110.
Although the moving direction of the calibration ring 110 can also be ensured by the extending and retracting directions of the plurality of cylinders, preferably, in this embodiment, the plummer 20 is mounted on a support 203, the support 203 is provided with a guide sleeve 80 matching with the extending and retracting main shaft of the cylinder, and the upper end of the extending and retracting main shaft extends out of the guide sleeve 80 to be connected with the calibration ring 110.
Example two
As shown in fig. 3, the present embodiment provides a wafer calibration apparatus 10, which is substantially the same as the first embodiment, except that the driving apparatus 120 in the present embodiment includes a lifting frame 121 and a cylinder 122 (or a plurality of cylinders), three non-linearly arranged lifting rods 1211 (or more) are disposed on the lifting frame 121, the carrier 20 is mounted on a support 203, a guide sleeve 80 matched with the lifting rods 1211 is disposed on the support 203, and the upper ends of the three lifting rods 1211 extend out from the guide sleeve 80 and are connected to the calibration ring 110. The telescopic main shaft of the cylinder 122 pushes the lifting frame 121 to move up and down.
EXAMPLE III
As shown in fig. 4, the present embodiment provides a wafer edge etching apparatus, including: a radio frequency power source (not shown), a reaction chamber 50, a susceptor 20, and a moving assembly 40; the rf power source is used to excite the process gas in the reaction chamber 50 into a plasma gas for etching. The susceptor 20 is installed at the lower part of the reaction chamber 50, the susceptor 20 includes a cylindrical lower electrode 201 and a lower plasma exclusion zone ring 202 surrounding the edge of the lower electrode 201, and the outer diameter of the lower plasma exclusion zone ring 202 is smaller than the diameter of the wafer 30 to be placed; the moving assembly 40 can be installed at the upper part of the reaction chamber 50 in a way of moving up and down; the moving assembly 40 includes a cylindrical upper electrode 401 opposite to the lower electrode and an upper plasma exclusion zone ring 402 surrounding the edge of the upper electrode 401; the wafer edge etching equipment further comprises a wafer calibration device 10 in the first embodiment; the calibration ring 110 of the wafer calibration apparatus 10 can be vertically and linearly moved and sleeved outside the lower plasma exclusion zone ring 202, and the cylindrical hole 112 and the lower plasma exclusion zone ring 202 are coaxially arranged.
The driving device 120 of the wafer calibration device 10 includes a plurality of cylinders capable of acting synchronously, the cylinders of the cylinders are disposed outside the reaction chamber 50, the telescopic main shafts of the cylinders extend upwards into the reaction chamber 50 and are connected to the calibration ring 110, a sealing structure 70 is disposed between the telescopic main shafts and the wall body of the reaction chamber 50, and the sealing structure 70 may be a structure for sealing a piston shaft body, in this embodiment, a sealing ring sealing structure.
The bearing table 20 is installed on a support 203 at the lower part of the reaction chamber 50, a guide sleeve 80 matched with the ejector 1211 or the telescopic main shaft is arranged on the support 203, and the upper end of the ejector 1211 or the telescopic main shaft extends out of the guide sleeve 80 to be connected with the calibration ring 110.
In the wafer edge etching apparatus of the present invention, the top pin assembly 60 may not be included, but in order to reduce contamination of the wafer 30 during the transportation process, in this embodiment, the top pin assembly 60 for supporting the wafer 30 is further disposed on the lower electrode 201. When the transfer robot delivers the wafer 30 to the reaction chamber 50 above the susceptor 20, the ejector pin in the ejector pin assembly 60 is raised to lift the wafer 30, after the robot exits the reaction chamber 50, the calibration ring 110 is raised to lift the smooth conical surface in the calibration ring 110 to lift the wafer 30, at this time, the ejector pin is lowered into the susceptor 20 to move the calibration ring 110 downward, as the calibration ring 110 moves downward, the wafer 30 slides down along the smooth conical surface into the cylindrical hole 112 under the action of gravity and vibration and is finally lifted by the wafer bearing surface 113, the calibration ring 110 is continuously moved downward until the wafer bearing surface 113 is lowered below the top surface of the susceptor 20, and the wafer 30 is placed on the top surface of the susceptor 20 by the calibration ring 110.
It should be noted that the upper electrode 401, the lower electrode 201, the upper plasma exclusion zone ring 402, the lower plasma exclusion zone ring 202, the rf power source, the reaction chamber 50, etc. in the wafer edge etching apparatus of the present invention have many applications in the existing wafer edge etching apparatus, and the installation manner and the electrical connection manner thereof are not described in detail herein.
The wafer edge etching equipment provided by the invention is provided with the wafer calibration device 10, so that the wafer 30 can be coaxially placed on the lower bearing platform 20 according to the set coaxiality tolerance, the coaxiality of the wafer 30 and the upper and lower plasma forbidden zone rings 202 can be effectively ensured, and the wafer edge etching yield of the wafer 30 can be effectively ensured.
Example four
As shown in fig. 5, the present embodiment provides a wafer edge etching apparatus, which is substantially the same as the third embodiment, except that the driving device 120 of the wafer alignment apparatus 10 in the present embodiment includes a lifting frame 121 disposed outside the reaction chamber 50 and at least one cylinder 122, the lifting frame 121 is provided with at least three lifting rods 1211, the at least three lifting rods 1211 extend upward into the reaction chamber 50 and are connected to the alignment ring 110, a sealing structure 70 is disposed between the lifting rods 1211 and a wall of the reaction chamber 50, and a telescopic spindle of the at least one cylinder 122 pushes the lifting frame 121 to move up and down.
EXAMPLE five
As shown in fig. 6, the present embodiment provides an automatic calibration method for coaxiality of a wafer, which is used to coaxially place the wafer on the top of a cylindrical susceptor according to a set coaxiality tolerance, wherein the diameter of the susceptor is smaller than the diameter of the wafer, and the method includes the following steps:
setting a calibration ring;
a conical hole with a downward small end is arranged at the upper part of the inner hole of the calibration ring;
arranging a cylindrical hole coaxial with the conical hole at the small end of the conical hole, and enabling the diameter of the cylindrical hole to be equal to the sum of the diameter of the wafer and the set coaxiality tolerance;
a wafer bearing surface is arranged at the lower part of the cylindrical hole;
a channel which allows the bearing table to pass through but does not allow the wafer to pass through is arranged in the middle of the wafer bearing surface;
the calibration ring can be sleeved outside the bearing table in a vertically linear moving mode, and the cylindrical hole and the bearing table are coaxially arranged;
and the wafer falls onto the wafer bearing surface through the conical hole and then is placed on the bearing platform along with the descending of the calibration ring.
According to the method, the wafer falls into the cylindrical hole after being centered by the conical hole and continues to descend along with the calibration ring until the wafer is placed on the top surface of the bearing table by the calibration ring, and the coaxiality requirement between the wafer and the bearing table can be guaranteed through the size of the cylindrical hole, so that powerful guarantee is provided for the subsequent processing technology.
In the method of the present invention, the driving manner for moving the calibration ring up and down is not limited in principle, and in consideration of high cleanliness of the air cylinders and low operation cost, the calibration ring is driven to ascend and descend by at least one air cylinder in this embodiment.
In the present invention, the process of dropping the wafer onto the wafer supporting surface through the conical hole and then placing the wafer on the susceptor along with the descending of the calibration ring may be various, and in this embodiment, the process of dropping the wafer onto the wafer supporting surface through the conical hole and then placing the wafer on the susceptor along with the descending of the calibration ring includes:
the wafer is conveyed to the upper part of the bearing table;
the thimble assembly is lifted to support the wafer;
the calibration ring rises to enable the wafer to enter the conical hole;
the thimble assembly descends below the bearing table;
the calibration ring is lowered until the wafer is placed on the susceptor.
The taper angle of the conical hole in the method of the present invention may be any angle that enables the wafer to slide down under the action of gravity or vibration, but considering that the same taper angle with a smaller diameter at the larger end requires a higher thickness, and the larger taper angle is not beneficial to the wafer sliding down during the movement of the calibration ring, the taper angle of the conical hole in the present invention is preferably any value of 80 to 140 °, such as 80 °, 100 °, 120 °, 140 °, and the taper angle in the method of the present embodiment is set to 120 °.
EXAMPLE six
As shown in fig. 7, the present embodiment provides an automatic calibration method for wafer coaxiality, which is different from the fifth embodiment in that the process of dropping the wafer onto the wafer supporting surface through the conical hole and then placing the wafer on the susceptor along with the descending of the calibration ring in the present embodiment includes:
the wafer is directly conveyed to the bearing table;
lifting the calibration ring to enable the conical hole to lift the wafer;
the wafer falls onto a wafer bearing surface in the cylindrical hole through the conical hole;
the calibration ring is lowered until the wafer is placed on the susceptor.
EXAMPLE seven
As shown in fig. 8, the present embodiment provides an automatic calibration method for wafer coaxiality, which is different from the fifth embodiment in that the process of dropping the wafer onto the wafer supporting surface through the conical hole and then placing the wafer on the susceptor along with the descending of the calibration ring in the present embodiment includes:
the wafer is conveyed to the upper part of the bearing table;
lifting the calibration ring to enable the conical hole to lift the wafer;
the wafer falls onto a wafer bearing surface in the cylindrical hole through the conical hole;
the calibration ring is lowered until the wafer is placed on the susceptor.
Example eight
As shown in fig. 9, the present invention provides a method for etching a wafer edge, which performs edge etching by placing a wafer on the top of a cylindrical susceptor in a reaction chamber, and is mainly different from the existing method for etching a wafer edge in that an automatic calibration method for wafer coaxiality is first adopted in the method for etching a wafer edge, and the wafer is coaxially placed on the top of the cylindrical susceptor according to a set coaxiality tolerance and then edge etching is performed. The automatic calibration method for the coaxiality of the wafer can be the automatic calibration method for the coaxiality of the wafer described in any one of the fifth embodiment to the seventh embodiment. Considering that most of the existing wafer edge etching devices are provided with ejector pin assemblies, as an embodiment of the present invention, in this embodiment, the method for automatically calibrating the coaxiality of the wafer includes the following steps:
setting a calibration ring;
a conical hole with a downward small end is arranged at the upper part of the inner hole of the calibration ring;
arranging a cylindrical hole coaxial with the conical hole at the small end of the conical hole, and enabling the diameter of the cylindrical hole to be equal to the sum of the diameter of the wafer and the set coaxiality tolerance;
a wafer bearing surface is arranged at the lower part of the cylindrical hole;
a channel which allows the bearing table to pass through but does not allow the wafer to pass through is arranged in the middle of the wafer bearing surface;
the calibration ring can be sleeved outside the bearing table in a vertically linear moving mode, and the cylindrical hole and the bearing table are coaxially arranged;
the manipulator sends the wafer to the upper part of the bearing table in the reaction cavity;
after the wafer is in place, the lower thimble assembly is lifted so as to support the wafer;
the manipulator withdraws from the reaction chamber;
the calibration ring ascends the conical hole to lift the wafer;
the thimble assembly descends below the bearing table;
the wafer falls onto the wafer bearing surface in the cylindrical hole through the conical hole;
the calibration ring descends until the wafer is placed on the bearing table;
and the plasma forbidden zone ring descends to a set position to start the etching work of the wafer edge.
In summary, the wafer calibration device and method, and the wafer edge etching apparatus and method of the present invention can enable the wafer to be coaxially placed on the lower bearing table according to the set coaxiality tolerance, and can effectively ensure the accuracy of the subsequent process. Therefore, the invention effectively overcomes some practical problems in the prior art, thereby having high utilization value and use significance.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (19)
1. A wafer calibration apparatus, comprising:
the upper part of the inner ring of the calibration ring is provided with a conical hole with a small end facing downwards and arranged coaxially with the bearing platform;
the small end of the conical hole is provided with a cylindrical hole which is coaxial with the conical hole, and the diameter of the cylindrical hole is equal to the sum of the diameter of the wafer and the set coaxiality tolerance;
a wafer bearing surface is arranged at the lower part of the cylindrical hole, and a channel allowing the bearing table to pass through but not allowing the wafer to pass through is formed in the middle of the wafer bearing surface;
the calibration ring can be sleeved outside the bearing table in a vertically linear moving mode, and the cylindrical hole and the bearing table are coaxially arranged;
and the driving device drives the calibration ring to move up and down so that the wafer bearing surface can move back and forth between the upper part and the lower part of the top surface of the bearing table.
2. The wafer calibration apparatus of claim 2, comprising:
the wafer calibration device is used for coaxially placing the wafer on the top of a cylindrical bearing table according to a set coaxiality tolerance, and the diameter of the bearing table is smaller than that of the wafer.
3. The wafer alignment device of claim 1, wherein the wafer support surface is an annular step surface.
4. The wafer calibration device of claim 1, wherein the calibration ring is made of ceramic or glass.
5. The wafer alignment apparatus as claimed in claim 1, wherein the driving device comprises a plurality of cylinders capable of operating synchronously, and the telescopic main shafts of the plurality of cylinders extend upwards and are connected with the alignment ring.
6. The wafer calibration device of claim 1, wherein the driving device comprises a lifting frame and at least one cylinder, the lifting frame is provided with at least three push rods, the at least three push rods extend upwards and are connected with the calibration ring, and a telescopic main shaft of the at least one cylinder pushes the lifting frame to move up and down.
7. The wafer calibration device according to any one of claims 5 or 6, wherein the susceptor is mounted on a support, a guide sleeve matched with the lift pin or the telescopic spindle is disposed on the support, and the upper end of the lift pin or the telescopic spindle extends out of the guide sleeve and is connected with the calibration ring.
8. A wafer edge etching apparatus, comprising:
the device comprises a radio frequency power source, a reaction chamber, a bearing table and a moving assembly;
the bearing table is arranged in the reaction chamber;
the bearing table comprises a lower electrode and a lower plasma forbidden zone ring surrounding the edge of the lower electrode;
the outer diameter of the lower plasma forbidden zone ring is smaller than the diameter of a wafer to be placed;
the moving assembly can be installed at the upper part of the reaction chamber in a way of moving up and down;
the moving assembly comprises an upper electrode opposite to the lower electrode and an upper plasma forbidden zone ring surrounding the edge of the upper electrode;
it is characterized by also comprising:
and a calibration ring of the wafer calibration device can be vertically and linearly sleeved outside the lower plasma forbidden zone ring in a moving manner, and a cylindrical hole of the calibration ring is coaxially arranged with the lower plasma forbidden zone ring.
9. The wafer edge etching apparatus of claim 8, wherein the driving device of the wafer calibrating device comprises a plurality of cylinders capable of acting synchronously, the cylinders of the cylinders are disposed outside the reaction chamber, the telescopic main shaft of the cylinder extends upwards into the reaction chamber and is connected with the calibrating ring, and a sealing structure is disposed between the telescopic main shaft and the wall body of the reaction chamber.
10. The wafer edge etching apparatus of claim 8, wherein the driving device of the wafer calibration device comprises a lifting frame and at least one cylinder, the lifting frame is disposed outside the reaction chamber, the lifting frame is provided with at least three push rods, the at least three push rods extend upwards into the reaction chamber and are connected with the calibration ring, a sealing structure is disposed between the push rods and a wall body of the reaction chamber, and a telescopic spindle of the at least one cylinder pushes the lifting frame to move up and down.
11. The wafer edge etching equipment of any one of claims 9 or 10, wherein the susceptor is mounted on a support, a guide sleeve matched with the ejector rod or the telescopic spindle is arranged on the support, and the upper end of the ejector rod or the telescopic spindle extends out of the guide sleeve and is connected with the calibration ring.
12. The wafer edge etching apparatus of claim 8, wherein the lower electrode is further provided with a thimble assembly for supporting the wafer.
13. A method for automatically calibrating wafer coaxiality is characterized by comprising the following steps:
setting a calibration ring;
a conical hole with a downward small end is arranged at the upper part of the inner hole of the calibration ring;
arranging a cylindrical hole coaxial with the conical hole at the small end of the conical hole, and enabling the diameter of the cylindrical hole to be equal to the sum of the diameter of the wafer and the set coaxiality tolerance;
a wafer bearing surface is arranged at the lower part of the cylindrical hole;
a channel which allows the bearing table to pass through but does not allow the wafer to pass through is arranged in the middle of the wafer bearing surface;
the calibration ring can be sleeved outside the bearing table in a vertically linear moving mode, and the cylindrical hole and the bearing table are coaxially arranged;
and the wafer falls onto the wafer bearing surface through the conical hole and then is placed on the bearing platform along with the descending of the calibration ring.
14. The automatic wafer coaxiality calibration method according to claim 13, wherein the automatic wafer coaxiality calibration method is used for coaxially placing the wafer on the top of a cylindrical bearing table according to a set coaxiality tolerance, and the diameter of the bearing table is smaller than that of the wafer.
15. The method of claim 13, wherein the calibration ring is driven up and down by at least one cylinder.
16. The method according to claim 13, wherein the susceptor is provided with a pin assembly, and the process of dropping the wafer onto the wafer support surface through the conical hole and then placing the wafer on the susceptor with the calibration ring comprises:
the wafer is conveyed to the upper part of the bearing table;
the thimble assembly is lifted to support the wafer;
the calibration ring rises to enable the wafer to enter the conical hole;
the thimble assembly descends below the bearing table;
the calibration ring is lowered until the wafer is placed on the susceptor.
17. The method of claim 13, wherein the step of lowering the wafer onto the susceptor surface through the conical hole and then onto the susceptor along with the calibration ring comprises:
the wafer is directly conveyed to the bearing table;
lifting the calibration ring to enable the conical hole to lift the wafer;
the wafer falls onto a wafer bearing surface in the cylindrical hole through the conical hole;
the calibration ring is lowered until the wafer is placed on the susceptor.
18. The method of claim 13, wherein the step of lowering the wafer onto the susceptor surface through the conical hole and then onto the susceptor along with the calibration ring comprises:
the wafer is conveyed to the upper part of the bearing table;
lifting the calibration ring to enable the conical hole to lift the wafer;
the wafer falls onto a wafer bearing surface in the cylindrical hole through the conical hole;
the calibration ring is lowered until the wafer is placed on the susceptor.
19. A method for etching the edge of a wafer, which is to etch the edge by placing the wafer on the top of a cylindrical bearing table in a reaction chamber, characterized in that the method for automatically calibrating the coaxiality of the wafer according to any one of claims 13 to 18 is used, and the wafer is coaxially placed on the top of the cylindrical bearing table according to the set coaxiality tolerance. And (5) edge etching.
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Application publication date: 20200529 |