CN111200052A - Wafer-level light-emitting panel module and manufacturing method thereof - Google Patents

Wafer-level light-emitting panel module and manufacturing method thereof Download PDF

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Publication number
CN111200052A
CN111200052A CN201811284150.4A CN201811284150A CN111200052A CN 111200052 A CN111200052 A CN 111200052A CN 201811284150 A CN201811284150 A CN 201811284150A CN 111200052 A CN111200052 A CN 111200052A
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light
emitting
filter
substrate
wafer
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CN201811284150.4A
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Chinese (zh)
Inventor
李宏斌
邱奕翔
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J Metrics Technology Co Ltd
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J Metrics Technology Co Ltd
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Priority to CN201811284150.4A priority Critical patent/CN111200052A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)

Abstract

A wafer-level light-emitting panel module comprises a light-emitting substrate, a filter film and a driving circuit substrate. The light-emitting substrate includes an upper surface, a lower surface, a conductive layer, a connecting pad, a bonding pad, and a plurality of light-emitting devices. The upper surface defines a light emitting area. The conductor layer extends from the upper surface to the lower surface of the light-emitting substrate. The connecting pad is located on the upper surface and connected with the conductor layer. The bonding pad is located on the lower surface and connected with the conductor layer. The light-emitting element is positioned in the light-emitting area and electrically connected to the connecting pad. The filter film is arranged on the upper surface of the light-emitting substrate and corresponds to the light-emitting elements, and the filter film shields the corresponding light-emitting elements. The drive circuit substrate is positioned on the lower surface of the light-emitting substrate, and the driver drive circuit substrate comprises a welding pin which is welded with the welding pad, so that the drive circuit substrate is electrically connected with the light-emitting element.

Description

Wafer-level light-emitting panel module and manufacturing method thereof
Technical Field
The invention relates to the field of display, in particular to a wafer-level light-emitting panel module and a manufacturing method thereof.
Background
In the display field, with the demand of users, the demand of small-area, clear and durable display panels is increasing. Although an Organic Light-Emitting Diode (OLED) has advantages of high brightness and high chroma. OLEDs, however, have their lifetime limitations.
For example, the display, the mobile phone or the watch using the OLED in the prior art can generate a phenomenon of "burn-in" after a period of time (e.g. 2000 hours) due to the characteristics of the organic material of the OLED itself, thereby reducing the lifetime of the product.
In order to solve the problems related to the OLED, manufacturers related to the LED adopt the LED size reduction to achieve the effect of longer service cycle of the LED, so as to solve the existing problems. However, the conventional mode is to cut and place the LEDs one by one to a specific position after the LEDs are manufactured. However, as the LED size is reduced to the wafer level, the transfer and alignment of the LED is extremely difficult.
Disclosure of Invention
Herein, a wafer-level light-emitting panel module is provided. The wafer level light emitting panel module includes a light emitting substrate, a plurality of filter films and a driving circuit substrate. The light-emitting substrate includes an upper surface, a lower surface, a plurality of conductive layers, a plurality of connecting pads, a plurality of bonding pads, and a plurality of light-emitting devices. The upper surface is defined with a plurality of light emitting areas. The conductor layer extends from the upper surface to the lower surface of the light-emitting substrate. The connecting pads are located on the upper surface, and each connecting pad is connected with one of the conductor layers. The bonding pads are located on the lower surface, and each bonding pad is connected with one of the conductor layers. The light emitting elements are respectively located in the light emitting areas, and each light emitting element is respectively electrically connected to the connecting pad. The filter films are arranged on the upper surface of the light-emitting substrate and correspond to the light-emitting elements, and each filter film shields the corresponding light-emitting element. The driving circuit substrate is located on the lower surface of the light-emitting substrate and comprises a plurality of welding pins, and each welding pin is welded with each welding pad respectively to enable the driving circuit substrate to be electrically connected with the light-emitting element.
In some embodiments, the driving circuit substrate includes a wafer carrier, on which a plurality of driving circuits are disposed, each driving circuit being used to drive a portion of the light emitting devices. Further, in some embodiments, the wafer carrier is further provided with a control circuit for receiving an external operation signal to generate a corresponding control signal to control the operation of the driving circuit.
In some embodiments, the width of the filter film is greater than the width of the light emitting region and less than the distance between the two connection pads.
In some embodiments, the light emitting elements are white Micro LEDs or white Mini LEDs. Further, in some embodiments, the filter includes a plurality of red filters, a plurality of green filters, and a plurality of blue filters.
In some embodiments, the wafer-level light-emitting panel module further comprises a protection plate. The protective plate is positioned on the upper surface of the light-emitting substrate.
The manufacturing method of the wafer-level light-emitting panel module is also provided. The manufacturing method of the wafer-level light-emitting panel module comprises a preparation step, a perforation step, a hole filling step, a filter film setting step and a welding step. The preparation step is to provide a light-emitting substrate, which includes an upper surface, a lower surface, a plurality of light-emitting devices and a plurality of connecting pads, wherein the upper surface is defined with a plurality of light-emitting areas, the light-emitting devices are located in the light-emitting areas, the connecting pads are located at the periphery of the light-emitting devices, and each light-emitting device is electrically connected to each corresponding connecting pad. The punching step forms a plurality of through holes on the light-emitting substrate. The through hole penetrates through the upper surface to the lower surface of the light-emitting substrate from the connecting pad. In the hole filling step, each through hole is filled with a conductive material to form a conductive layer, and the conductive layer is connected with the connecting pad. The step of setting the filter film forms a plurality of filter films on the upper surface of the light-emitting substrate, the filter films correspond to the light-emitting elements, and each filter film shields the corresponding light-emitting element. In the soldering step, a plurality of soldering pads are formed on the lower surface of the light-emitting substrate, each soldering pad is connected with one of the conductor layers, and the soldering pads are soldered with the soldering pins of the driving circuit substrate, so that the driving circuit substrate is electrically connected with the light-emitting element.
In some embodiments, the light emitting elements are white Micro LEDs, white Mini LEDs, or white LEDs. Furthermore, in some embodiments, the step of disposing the filter further includes a step of disposing a red filter, a step of disposing a green filter, and a step of disposing a blue filter. The red light filter film setting step sets a plurality of red light filter films on one part of the plurality of light emitting elements, the green light filter film setting step sets a plurality of green light filter films on another part of the plurality of light emitting elements, and the blue light filter film setting step sets a plurality of blue light filter films on another part of the light emitting elements.
In some embodiments, the driving circuit substrate includes a wafer carrier, on which a plurality of driving circuits are disposed, each driving circuit being used to drive a portion of the plurality of light emitting devices. Further, in some embodiments, the wafer carrier is further provided with a control circuit for receiving an external operation signal to generate a corresponding control signal to control the operation of the driving circuit.
Based on the above embodiments, the wafer-level light-emitting panel module can be obtained by directly drilling, filling holes, attaching the filter film on the light-emitting substrate without cutting, aligning and transferring after the light-emitting substrate is completed by the wafer manufacturing technology, and then welding the driving circuit substrate. Therefore, the wafer-level light-emitting panel module solves the problems of transfer and alignment of the traditional light-emitting elements, and meanwhile, the wafer-level light-emitting panel module has the advantages of self-luminescence, high brightness, high chroma and the like, and has the advantages of lightness, thinness, durability and long service life.
Drawings
The above and other exemplary embodiments, advantages and features of the present invention will become more apparent by describing in further detail exemplary embodiments thereof with reference to the attached drawings, in which:
FIG. 1 is a cross-sectional view of a wafer level light-emitting panel module.
FIG. 2 is a top view of a wafer level light-emitting panel module.
Fig. 3 is a block diagram of the driving circuit substrate.
FIG. 4 is a flow chart of a method for fabricating a wafer-level light-emitting panel module.
FIGS. 5-10 are schematic cross-sectional step-by-step views illustrating a method for fabricating a wafer-level light-emitting panel module.
Fig. 9A to 9E are cross-sectional views illustrating detailed steps of the filter setting step S40.
Detailed Description
In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on," "connected to," "in contact with" another element, it can be directly on, connected to, or in direct contact with the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on," "directly connected to," or "directly in contact with" another element, there are no intervening elements present.
In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one component's relationship to another component, as illustrated. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, components described as being on the "lower" side of other components would then be oriented on "upper" sides of the other components. Thus, the exemplary term "lower" can include both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.
In order to solve the problems of the prior art, a wafer level light emitting panel module 1 is provided. FIG. 1 is a cross-sectional view of a wafer level light-emitting panel module. FIG. 2 is a top view of a wafer level light-emitting panel module. Fig. 3 is a block diagram of the driving circuit substrate. As shown in fig. 1 to 3, the wafer-level light-emitting panel module 1 includes a light-emitting substrate 10, a plurality of filter films 30, and a driving circuit substrate 40.
The light-emitting substrate 10 includes an upper surface 11, a lower surface 13, a plurality of conductive layers 15, a plurality of connecting pads 17, a plurality of bonding pads 19, and a plurality of light-emitting devices 20. A plurality of light emitting regions 111 are defined on the upper surface 11. The conductor layer 15 extends from the upper surface 11 to the lower surface 13 of the light-emitting substrate 10. The connecting pads 17 are located on the upper surface 11, and each connecting pad 17 is connected to one of the conductive layers 15. The bonding pads 19 are located on the lower surface 13, and each bonding pad 19 is connected to one of the conductive layers 15. The light emitting devices 20 are respectively disposed in the light emitting regions 111, and each light emitting device 20 is electrically connected to the connecting pad 17.
More specifically, the light emitting device 20 is disposed on the light emitting substrate 10 directly through a semiconductor process, and the light emitting device 20 can be electrically connected to the connecting pad 17 through wire bonding or through a circuit formed on the light emitting substrate 10. That is, the light emitting substrate 10 may be a wafer substrate that is not diced into LED dies in the LED manufacturing process. Here, the light emitting substrate 10 may be a silicon wafer, a sapphire wafer, a gallium arsenide (GaAs) wafer, an aluminum nitride (AlN) wafer, or the like, which are merely exemplary and not intended to be limiting, and any light emitting substrate 10 may be used as long as it can be manufactured in a semiconductor manufacturing process and the light emitting element 20 can be formed thereon. In addition, the conductive layer 15 is formed by filling the through hole 14 (see fig. 7 and 8) penetrating through the light-emitting substrate 10 with a conductive material, which may be a part of the bonding pad 17 or the bonding pad 19. In addition, the conductive layer 15 may be a conductive pillar directly penetrating the upper surface 11 and the lower surface 13, or a conductive pillar filling a blind hole and connecting the upper surface 11 and the lower surface 13 electrically through a plurality of conductive sheets and conductive pillars.
Here, the filter 30 is disposed on the upper surface of the light emitting substrate 10 and corresponds to the light emitting device 20, and each filter 30 shields the corresponding light emitting device 20. In more detail, the width of the filter film 30 is greater than the width of the light emitting region 111 and less than the distance between the two connecting pads 17. Therefore, the filter film 30 can achieve the effect of sufficient shielding and filtering, so as to avoid light leakage, and simultaneously avoid light mixing caused by color light mixing of the filter films 30 with different colors. The light emitting element 20 may be a Micro LED or a Mini LED depending on the product of application.
The driving circuit substrate 40 is disposed on the lower surface 13 of the light emitting substrate 10, and the driving circuit substrate 40 includes a plurality of bonding pins 41, each bonding pin 41 is bonded to each bonding pad 19, so that the driving circuit substrate 40 is electrically connected to the light emitting device 20. Here, although the number of the connecting pads 17 and the number of the bonding pads 19 are drawn to be the same in the drawings, in practice, the number of the bonding pads 19 may be different from the connecting pads 17, for example, a plurality of connecting pads 17 are connected to the same bonding pad 19. In addition, the line width of the driving circuit substrate 40 may be different from the line width of the light emitting substrate 10.
In more detail, the driving circuit board 40 includes a wafer carrier 43, a plurality of driving circuits 431 are disposed on the wafer carrier 43, and each of the driving circuits 431 is used for driving a portion of the plurality of light emitting devices 20. That is, the advantage of shortening the response time by achieving the partition control through the plurality of driving circuits 431 is obtained. Furthermore, the wafer carrier 43 is further provided with a control circuit 433, and the control circuit 433 is used for receiving an operation command from the outside to generate a corresponding control signal to control the operation of the driving circuit 433. In other words, the driving circuit 431 for driving the light emitting device 20 and the control circuit 433 for receiving an external operation command can be disposed together through a semiconductor process.
For example, the light emitting device 20 is a white Micro LED, a white Mini, an LED, or a white LED, which can be directly formed on the light emitting substrate 10 by a photolithography process through an integrated circuit. The filter 30 includes a red filter 30R, a green filter 30G, and a blue filter 30B. Thus, R, G, B can be formed as a pixel. However, this is merely an example and not limited thereto, for example, a portion of the filter 30 may be transparent, and the area of R, G, B, W (white light) is a pixel in cooperation with the red filter 30R, the green filter 30G, and the blue filter 30B. In other embodiments, the color of the filter film 30 can be changed to cyan, magenta, yellow, and black, so as to achieve the color arrangement of CMYK. Alternatively, the Micro LEDs or Mini LEDs with different color lights, for example, red Micro LEDs, are used, and the color lights are adjusted by using the different color filters 30. Since Micro LEDs, Mini LEDs or LEDs are used as the light emitting elements 20 to be directly formed on the light emitting substrate 10, and then the filter film 30 is formed thereon, it is not necessary to cut, align, or transfer to a circuit board, and thus the problems of offset and poor alignment accuracy can be greatly reduced. In addition, all the light emitting elements 20 generally use the same light emitting body emitting light in accordance with the convenience of the manufacturing process.
Referring to fig. 1 again, the wafer-level light emitting panel module 1 may further include a protection plate 50, wherein the protection plate 50 is located on the upper surface 11 of the light emitting substrate 10 to prevent the light emitting device 20 and the plurality of filter films 30 from being damaged. The protection plate 50 is transparent, and may be glass, acrylic, or the like, and although not shown in the drawings, it can be understood by those skilled in the art that the wafer-level light-emitting panel module 1 can be further packaged to achieve the effect of protecting and isolating the external moisture environment.
FIG. 4 is a flow chart of a method for fabricating a wafer-level light-emitting panel module. FIGS. 5-10 are schematic cross-sectional step-by-step views illustrating a method for fabricating a wafer-level light-emitting panel module. As shown in fig. 4, the method S1 for manufacturing the light-emitting panel wafer level light-emitting panel module includes a preparation step S10, a punching step S20, a hole filling step S30, a filter film setting step S40, and a welding step S50.
As shown in fig. 5, the preparation step S10 provides a wafer level light emitting substrate 10, in which the wafer level light emitting substrate 10 includes an upper surface 11, a lower surface 13, a plurality of light emitting devices 20, and a plurality of connecting pads 17, the upper surface 11 defines a plurality of light emitting areas 111, the light emitting devices 20 are located in the light emitting areas 111, the connecting pads 17 are located at the periphery of the light emitting devices 20, and the light emitting devices 20 are electrically connected to the corresponding connecting pads 17, respectively. Here, the light emitting region 111 is shown as a groove in the drawings, however, this is only for convenience of illustration, and in practice, the invention is not limited thereto, and the light emitting region 111 may be a groove, a plane, or a protrusion. In addition, the wafer level light emitting substrate 10 can be directly manufactured by the conventional semiconductor process technology.
As shown in fig. 6, the punching step S20 is to form a plurality of through holes 14 on the light-emitting substrate 10. The through hole 14 penetrates the upper surface 11 to the lower surface 13 of the light-emitting substrate 10 through the connection pad 17. Here, the through hole 14 may be formed by laser drilling, but this is merely an example and is not limited thereto, and may be formed by other methods. In more detail, the through hole 14 formed in the punching step S20 may be a single through hole directly penetrating through the light-emitting substrate 10, or may be a plurality of blind holes that are mutually connected but not identical in direction.
As shown in fig. 7, the filling step S30 fills the through holes 14 with a conductive material to form conductive layers 15, and the conductive layers 15 are connected to the connecting pads 17. If the connecting pad 17 is broken during drilling, the connecting pad 17 can be filled with a conductive material, and the conductive layer 15 is connected to the connecting pad 17 when the conductive layer 15 is formed. Here, the punching step S20 and the filling step S30 can be performed by Through Silicon Via (TSV) technology in the conventional semiconductor process, and further, the conductive layer 15 can be further connected to the circuits on the upper surface 11 and the lower surface 13 of the light-emitting substrate 10 to form a three-dimensional stacked integrated circuit structure.
As shown in fig. 8, the filter disposing step S40 forms a plurality of filters 30 on the upper surface 11 of the light-emitting substrate 10 of the wafer level light-emitting substrate, wherein the filters 30 correspond to the light-emitting devices 20, and each filter 30 shields the corresponding light-emitting device 20.
Fig. 9A to 9E are cross-sectional views illustrating detailed steps of the filter setting step S40. As shown in fig. 9A, the filter setting step S40 first selects one filter 30 from the filter tape 300 disposed on the substrate 400, and adsorbs the filter 30 to the adhesive layer 31 on the filter 30 through the suction head 200. As shown in fig. 9B, when the suction head 200 is going to lift the filter 30, the pressure causes the tie strap 310 of the filter carrier tape 300 connected to the filter 30 to be disconnected, and at this time, as shown in fig. 9C, the suction head 200 drives the filter 30 to lift upwards and move the filter 30. As shown in fig. 9D, the suction head 200 drives the filter 30 to move to the upper side of the light emitting region 111, and the suction head 200 can make the protection layer 33 under the filter 30 adhere to the resin layer 21 coated on the light emitting device 20 after lowering, so that the filter 30 adheres to the light emitting device 20. Finally, as shown in fig. 9E, after the protective layer 33 is cured by light curing or heat curing, the suction head 200 and the filter 30 can be easily separated, and then the excessive resin layer 21 can be removed by a related technique of general cleaning. In fig. 1 and fig. 10 to be described later, the resin layer 21, the adhesive layer 31, and the protective layer 33 are omitted in order to avoid complication of the drawings.
As shown in fig. 10, the soldering step S50 forms a plurality of solder pads 19 on the lower surface 13 of the light-emitting substrate 10, each solder pad 19 is connected to one of the conductive layers 15, and the solder pad 19 is soldered to the solder pin 41 of the driving circuit substrate 40, so that the driving circuit substrate 40 is electrically connected to the light-emitting device 20. The light emitting element 20 is driven through the driving circuit board 40. Here, although the number of the connection pads 17 and the number of the bonding pads 19 are drawn to be the same in the drawings, the number of the bonding pads 19 may be different from the connection pads 17 in practice. For example, the angle of the through hole 14 may be adjusted so that a plurality of conductor layers 15 are connected to the same bonding pad 19.
Referring again to fig. 2, 4 and 8, the light emitting device 20 may be a white light Micro LED. The filter setting step S40 further includes a red filter setting step S41, a green filter setting step S43, and a blue filter setting step S45. The red filter disposing step S41 disposes a plurality of red filters 30R on one portion of the plurality of light emitting devices 20, the green filter disposing step S43 disposes a green filter 30G on another portion of the plurality of light emitting devices 20, and the blue filter disposing step S45 disposes a plurality of blue filters on another portion of the plurality of light emitting devices 20. Here, the red filter 30R, the green filter 30G, and the blue filter 30B are disposed at different positions. The region having R, G, B may be configured as a pixel. In addition, the filter 30 may not be disposed in the region of the remaining portion, or the filter 30 may be disposed to be transparent, and the region with R, G, B, W may be configured as one pixel. However, the above description is by way of example only, and not by way of limitation. Various other ways of blending the color lights may be applied.
Based on the above embodiments, the wafer-level light-emitting panel module 1 can be formed by directly forming the light-emitting element 20 on the light-emitting substrate 10 by the wafer fabrication technique, and directly performing the processes of drilling, filling, attaching the filter 30, and soldering the driving circuit substrate 40. The light emitting region 111 corresponding to the light emitting element 20 can be determined directly at the time of designing the light emitting substrate 10, and the light emitting element 20 can be completed directly at the time of manufacturing the light emitting substrate 10. Therefore, the processes of wafer dicing, light emitting device 20 transferring, etc. are not required, and the problem of alignment accuracy encountered in the conventional mass transfer is solved. Meanwhile, the wafer-level light-emitting panel module 1 can achieve self-luminescence without components such as a backlight module, a liquid crystal and the like, so that the product is lighter and thinner, and has higher brightness and chroma, and the advantages of durability and long service life.
While the invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not to be limited to the disclosed embodiments, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
[ notation ] to show
1 wafer level light-emitting panel module 10 light-emitting substrate
11 upper surface 111 light emitting zone
13 lower surface 14 through hole
15 conductor layer 17 connection pad
19 bonding pad 20 light emitting device
21 resin layer 30 Filter coating
30R red light filter film and 30G green light filter film
30B blue light filter film 31 adhesive layer
33 protective layer 40 drive circuit board
41 soldering pins 43 wafer carrier
431 drive circuit 433 control circuit
200 absorb head 300 filter coating material area
310 lace 400 base plate
50 protection plate
Manufacturing method of S1 wafer-level light-emitting panel module
S10 preparation step S20 punching step
S30 hole filling step S40 filter setting step
S41 Red Filter setting step S43 Green Filter setting step
S45 blue light filter setting step S50 welding step

Claims (12)

1. A wafer-level light-emitting panel module comprises:
a light-emitting substrate including an upper surface, a lower surface, a plurality of conductive layers, a plurality of connecting pads, a plurality of bonding pads, and a plurality of light-emitting devices, wherein the upper surface is defined with a plurality of light-emitting areas, the plurality of conductive layers extend from the upper surface to the lower surface of the light-emitting substrate, the plurality of connecting pads are located on the upper surface, each of the connecting pads is connected to one of the plurality of conductive layers, the plurality of bonding pads are located on the lower surface, each of the bonding pads is connected to one of the plurality of conductive layers, the plurality of light-emitting devices are respectively located in the plurality of light-emitting areas, and each of the light-emitting devices is;
a plurality of filter films arranged on the upper surface of the light-emitting substrate and corresponding to the plurality of light-emitting elements, wherein each filter film shields the corresponding light-emitting element; and
and the driving circuit substrate is positioned on the lower surface of the light-emitting substrate and comprises a plurality of welding pins, and each welding pin is welded with each welding pad respectively so that the driving circuit substrate is electrically connected with the plurality of light-emitting elements.
2. The wafer level light-emitting panel module as claimed in claim 1, wherein the driving circuit substrate comprises a wafer carrier, and a plurality of driving circuits are disposed on the wafer carrier, each driving circuit being used to drive a portion of the plurality of light-emitting devices.
3. The wafer-level light-emitting panel module as claimed in claim 2, wherein the wafer carrier further comprises a control circuit for receiving an operation command from the outside to generate a corresponding control signal for controlling the plurality of driving circuits.
4. The wafer level light-emitting panel module as claimed in claim 1, wherein the width of the plurality of filter films is larger than the width of the plurality of light-emitting areas and smaller than the distance between two of the connecting pads.
5. The wafer-level light-emitting panel module as claimed in claim 1, wherein each of the light-emitting elements is a white Micro LED, a white Mini LED, or a white LED.
6. The wafer level light emitting panel module as recited in claim 5, wherein the plurality of filters comprises a plurality of red filters, a plurality of green filters, and a plurality of blue filters.
7. The wafer level light emitting panel module as claimed in claim 1, further comprising a protective plate disposed on the top surface of the light emitting substrate.
8. A manufacturing method of a wafer-level light-emitting panel module comprises the following steps:
a preparation step, providing a light-emitting substrate, wherein the light-emitting substrate comprises an upper surface, a lower surface, a plurality of light-emitting elements and a plurality of connecting pads, a plurality of light-emitting areas are defined on the upper surface, the plurality of light-emitting elements are positioned in the plurality of light-emitting areas, the plurality of connecting pads are positioned at the periphery of the plurality of light-emitting elements, and the light-emitting elements are respectively and electrically connected to the corresponding connecting pads;
a punching step, forming a plurality of through holes on the light-emitting substrate, wherein the plurality of through holes penetrate through the upper surface of the light-emitting substrate from the connecting pad to the lower surface;
a hole filling step, filling a conductive material in each through hole to form a conductive layer, and the conductive layer is connected with the connecting pad;
a step of setting a filter film, wherein a plurality of filter films are formed on the upper surface of the light-emitting substrate, the plurality of filter films correspond to the plurality of light-emitting elements, and each filter film shields the corresponding light-emitting element; and
a soldering step, forming a plurality of soldering pads on the lower surface of the light-emitting substrate, connecting each soldering pad with one of the conductor layers, soldering the plurality of soldering pads with a plurality of soldering pins of a driving circuit substrate, and electrically connecting the driving circuit substrate with the plurality of light-emitting elements.
9. The method of claim 8, wherein each of the light emitting devices is a white Micro LED or a white MiniLED.
10. The method of claim 9, wherein the step of disposing the filter further comprises a step of disposing a red filter, a step of disposing a green filter, and a step of disposing a blue filter, the step of disposing the red filter disposing a plurality of red filters on one portion of the plurality of light emitting devices, the step of disposing the green filter disposing a plurality of green filters on another portion of the plurality of light emitting devices, and the step of disposing the blue filter disposing a plurality of blue filters on another portion of the plurality of light emitting devices.
11. The method according to claim 8, wherein the driving circuit substrate comprises a wafer carrier, and a plurality of driving circuits are disposed on the wafer carrier, each driving circuit being used to drive a portion of the plurality of light emitting devices.
12. The manufacturing method as claimed in claim 11, wherein the wafer carrier further comprises a control circuit for receiving an operation signal from outside to generate a corresponding control command for controlling the operations of the plurality of driving circuits.
CN201811284150.4A 2018-10-31 2018-10-31 Wafer-level light-emitting panel module and manufacturing method thereof Withdrawn CN111200052A (en)

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TW201409434A (en) * 2012-08-17 2014-03-01 Macroblock Inc Display structure and the display
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TW201409434A (en) * 2012-08-17 2014-03-01 Macroblock Inc Display structure and the display
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Application publication date: 20200526