Disclosure of Invention
The application provides a detection device of a micro-component and a manufacturing method thereof, which are used for solving the problems of poor detection contact and poor reliability of the micro-component in the prior art.
In order to solve the above technical problem, the present application provides a micro device inspection apparatus, which includes a substrate; the fixed seat is fixed on one surface of the substrate; the cantilever beam is arranged at an interval with the substrate, one end of the cantilever beam is fixed on the fixed seat, and the other end of the cantilever beam is used as a detection end; the conducting wire extends along the cantilever beam, one end of the conducting wire extends to the detection end of the cantilever beam and is back to the substrate.
The detection device comprises a plurality of detection units, wherein two fixed seats and a pair of cantilever beams form one detection unit; the pair of cantilever beams are respectively fixed on the two fixed seats and extend oppositely; a tip is formed on one side, back to the substrate, of the detection end of each cantilever beam, and the lead extends to the surface of the tip so as to form a detection point.
The detection end of each cantilever beam is provided with a plurality of detection points, and the arrangement direction of the detection points is the same as the extension direction of the fixed seat.
Each cantilever beam comprises a beam body and a detection end, one end of the beam body is connected with the fixed seat, the other end of the beam body is connected with the detection end, the width of the detection end is larger than that of the beam body, and the detection points are arranged in the width direction of the detection end.
The detection end is in a tooth shape and comprises a plurality of tooth heads which are arranged in parallel, and a detection point is formed on each tooth head.
Wherein, two fixing bases are arranged in parallel, and the extending direction of the cantilever beam is perpendicular to the extending direction of the fixing bases.
Wherein, a plurality of detecting element parallel arrangement, the fixing base of each detecting element connects as an organic whole.
Wherein, the substrate is a transparent substrate.
Wherein the cantilever beam is parallel to the substrate, and the distance between the cantilever beam and the substrate is 1-100 μm.
In order to solve the above technical problem, the present application further provides a method for manufacturing a micro device inspection apparatus, including: etching the silicon wafer to form a groove; the silicon chip is divided into a cantilever part and a fixed part, and the thickness of the cantilever part is smaller than that of the fixed part so as to form a groove; bonding the fixed part on the substrate, wherein the cantilever part and the substrate are arranged at intervals; etching the cantilever part to enable the cantilever part to form a cantilever beam, wherein one end of the cantilever beam is connected to the fixed part, and the other end of the cantilever beam is used as a detection end; and a lead is formed on the cantilever beam, extends along the cantilever beam, and has one end extending to the detection end of the cantilever beam and back to the substrate.
Wherein, carry out the sculpture to cantilever part for cantilever part forms the cantilever beam, includes before: and etching or corroding the cantilever part to form a tip on the cantilever part, wherein the tip is positioned at the detection end of the cantilever.
The detection device for the micro-element comprises a substrate, a fixing seat, a cantilever beam and a wire, wherein one end of the cantilever beam is fixed on one surface of the substrate through the fixing seat, the cantilever beam and the substrate are arranged at intervals, the other end of the cantilever beam is used as a detection end, and the wire extends along the cantilever beam to the detection end of the cantilever beam and faces away from the substrate to realize detection. One end of the cantilever beam is fixed, the other end of the cantilever beam is used as a detection end, and the cantilever beam and the substrate are arranged at intervals, so that the detection end can be elastically deformed, and when the detection end is used for detection, a certain acting force can be applied to the detection end to ensure that the detection end is in good contact with the micro-element, and the detection reliability is further improved.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless explicitly specifically limited otherwise. All directional indicators in the embodiments of the present application (such as upper, lower, left, right, front, rear, top, bottom … …) are only used to explain the relative positional relationship between the components, the movement, etc. in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
The detection device can be applied to detection of the Micro-element, and the detection of the Micro-LED is taken as an example for description, and other Micro-elements with structures similar to the Micro-LED can also be used for realizing high-reliability detection.
The Micro-LEDs are formed on the substrate as LED Micro-elements to form a display panel, each LED Micro-element corresponds to a pixel point, self-luminescence of the pixel points of the display panel is achieved, and in order to guarantee display quality of each pixel point in the display panel, each LED Micro-element needs to be detected. Therefore, referring to fig. 1-3, fig. 1 is a schematic structural diagram of an embodiment of a micro-device detection apparatus of the present invention, fig. 2 is a schematic diagram of the embodiment of the detection apparatus shown in fig. 1 during detection, and fig. 3 is a top view of the embodiment of the detection apparatus shown in fig. 1.
The detection device 100 of the present embodiment includes a substrate 11, a fixing base 12, a cantilever 13 and a conducting wire 14. Wherein, the fixed seat 12 is fixed on the surface of the substrate 11; one end of the cantilever beam 13 is fixed on the fixed seat 12, and the other end is used as a detection end 131; the conductive wire 14 extends along the cantilever 13, and has one end extending to the detection end 131 of the cantilever 13 and facing away from the substrate.
The detection end 131 of the cantilever beam 13 realizes detection through the wire 14, and the cantilever beam 13 and the substrate 11 are arranged at intervals, that is, a certain space exists between the cantilever beam 13 and the substrate 11, specifically, the cantilever beam 13 is parallel to the substrate 11, and the interval h between the cantilever beam 13 and the substrate 11 is generally set to be 1-100 μm. When the detecting end 131 of the cantilever 13 is used for detecting, the detecting end 131 is also a free end of the cantilever 13, which can move in the space between the detecting end 131 and the substrate 11, i.e. the detecting end 131 has a certain elasticity.
When the LED micro-component 200 is detected, a certain pressure is applied to the detection device 100 to press the detection end 131 against the micro-component 200, so that the surface condition of the micro-component 200 is no matter, such as uneven surface or warping; good contact of the sensing terminal 131 with the micro-component 200 is ensured, thereby ensuring reliability of the sensing of the micro-component 200.
The embodiment can simultaneously detect a plurality of micro-components, the corresponding detection device comprises a plurality of detection units, and each detection unit can simultaneously detect one or a group of micro-components.
Furthermore, the detection performed by the present embodiment is generally an electrical detection, i.e. two detection points are generally required for one micro-component. Thus, each detection unit comprises two fixed seats 12 and a pair of cantilever beams 13, and the pair of cantilever beams 13 are respectively fixed on the two fixed seats 12 and extend oppositely, so that the two detection ends 131 of the pair of cantilever beams 13 can be relatively close to each other to realize the detection of the micro-component.
The two fixing bases 12 are arranged in parallel, and the extending direction of the cantilever beam 13 is perpendicular to the extending direction of the fixing bases 12. For the detection of the LED micro-components, because the LED micro-components are generally arranged in an array on the substrate, in order to realize the simultaneous detection of a plurality of micro-components, the plurality of detection units in the detection apparatus of this embodiment also adopt a parallel arrangement mode, and at this time, the fixing seats of each detection unit are connected into a whole, that is, each detection unit adopts the same fixing seat.
Furthermore, in the present embodiment, a tip 132 is formed on a side of the detection end 131 of each cantilever 13 facing away from the substrate 11, and the wire 14 extends to a surface of the tip 132, thereby forming a detection point. Due to the microminiature of the micro-component, the use of a tip design to form the probing points ensures that they can contact the surface of the micro-component.
The detecting end 131 of the cantilever 13 may have a plurality of tips 132 formed thereon, and the wires extend to the surface of each tip 132 to form a plurality of detecting points, and the arrangement direction of the plurality of detecting points is the same as the extending direction of the fixing base, so that the detecting can be performed by a plurality of micro-components.
The cantilever beam 13 formed with the plurality of tips 132 has various structures, and particularly, referring to fig. 4-6, fig. 4-6 are schematic views of three cantilever beam structures in one embodiment of the detecting device shown in fig. 1.
For convenience of describing the structure of the cantilever beam 13, the cantilever beam 13 in fig. 4-6 further includes a beam body 133, one end of the beam body 133 is fixed to the fixing base 12, and the other end is connected to the detecting end 131. The plurality of detection points are arranged in the width direction of the detection end 131.
The width of beam 133 in fig. 4 is equal to the width of sensing end 131, and the width of sensing end 131 is greater than the width of beam 133 in fig. 5-6; the sensing end 131 of fig. 5-6 is more resilient for the entire cantilever beam and is more easily adapted to different micro-components to change.
In addition, the detecting end 131 in fig. 6 has a tooth shape, and includes a plurality of tooth heads arranged in parallel, and each tooth head forms a detecting point. Compared with fig. 4-5, each tooth head in the detection end in fig. 6 can be adapted to a micro-component, i.e. the adaptability is stronger.
But the processes of fig. 4-6 become successively more complex from a process perspective. Thus, different cantilever beam structures may be selected for different requirements.
Fig. 3 is compared with fig. 4-6, the structure of fig. 3 is better adapted to each micro-component by forming a detection point on a cantilever beam, but a cantilever beam needs to be etched for each micro-component, and the elongated cantilever beam is more prone to breakage than the structure of fig. 4-6.
In this embodiment, the substrate 11 is a transparent substrate, so that when the detection device 100 is used to perform detection, whether the detection point is in contact with the micro-component can be observed through the transparent substrate, the substrate 11 can be made of Pyrex7740 glass, and the thickness can be set to 250-1000 μm; the cantilever beam 13 can be made of silicon on insulator (SOI silicon chip), and the thickness of the silicon on insulator can be set to be 1-100 mu m; the material of the conductive wire 14 may be Cr, Cu, Au, Ni, W, Mo, etc., and the thickness thereof may be set to 1 to 10 μm.
Based on the above description, the free end of the cantilever beam in the detecting device of the micro-component of the present embodiment serves as the detecting end, and can be elastically deformed, so that when the micro-component is detected, it can be in good contact with the micro-component, thereby ensuring the reliability of the detection. In addition, the detection device of the embodiment can simultaneously detect a plurality of micro-components, thereby improving the detection reliability and the detection efficiency.
Referring to fig. 7 and 8, fig. 7 is a schematic flow chart of an embodiment of a manufacturing method of the detecting device of the present application, and fig. 8 is a schematic structural diagram of a forming process of the detecting device in the embodiment of the manufacturing method of fig. 7. The manufacturing method of the present embodiment includes the following steps.
S101: and etching the silicon wafer to form a groove.
The step S101 of etching the silicon wafer may be combined with the processes (a) to (b) in fig. 8. After the silicon wafer 21 is etched, the silicon wafer 21 is divided into the cantilever part 211 and the fixing part 212, the thickness of the cantilever part 211 is smaller than that of the fixing part 212, so as to form a groove 213, the depth of the groove 213 can be 1-100 μm, and the groove 213 finally forms a space between the cantilever and the substrate.
The silicon wafer provided in this step may be a single crystal silicon wafer, such as a single crystal 100 silicon wafer, or an SOI silicon wafer.
S102: and bonding the fixing part on the substrate.
This step can be understood in conjunction with (c) of fig. 8, and the cantilever portion 211 is spaced apart from the substrate 22 after bonding. The substrate may be Pyrex7740 glass, and in this step S102, wafer bonding may be implemented specifically by electrostatic bonding, eutectic bonding, adhesive bonding, thermocompression bonding, or the like.
S103: the cantilever portion is processed to form a tip.
As can be understood in fig. 8 (d), the step includes thinning the cantilever portion 211 to a designed thickness; and forming the tip 214. In the present embodiment, the cantilever portion 211 is designed as a cantilever because the thickness is reduced to 1-100 μm and the height of the tip 214 is 1-50 μm.
In addition, if the cantilever part is a monocrystalline silicon wafer, the thinning treatment in the step adopts a polishing process; if the cantilever part is an SOI silicon chip, the substrate silicon is removed by adopting wet etching or dry etching in the thinning treatment in the step, and the SOI silicon chip has the advantage that the structure thickness is easier to control. The tip formed in the step can be directly formed during thinning, and the tip can also be formed by wet etching or dry etching after silicon dioxide is deposited.
S104: a conductive line is formed on the cantilever portion.
As will be understood from fig. 8 (e), in this step, the conductive line 23 is formed on the cantilever portion 211, the conductive line 23 extends to the tip 214, so that the tip constitutes a detection point, and the conductive line 23 is disposed opposite to the substrate 22. This step may employ depositing or sputtering a metal to form a metal layer, followed by electroplating to form metal wiring, i.e., a conductive line. The metal may be Cr, Cu, Au, Ni, W, Mo, etc., and the thickness of the finally formed wire may be 1-10 μm.
Before forming the conductive traces 23 on the cantilever 211, an insulating layer is formed to electrically isolate the silicon substrate 22 from the conductive traces 23.
S105: and etching the cantilever part to obtain the cantilever beam.
As can be understood from fig. 8 (f), the cantilever portion 211 formed with the conductive trace 23 is etched to obtain a cantilever structure, one end of the cantilever is connected to the fixing portion 212, and the other end of the cantilever is used as a detection end.
By adopting the mode, the detection device of the micro-component can be manufactured, good contact with the micro-component can be realized during detection, and the reliability of micro-component detection is ensured.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.