CN111172594A - Method for preparing single crystal by electric stimulation induction - Google Patents
Method for preparing single crystal by electric stimulation induction Download PDFInfo
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- CN111172594A CN111172594A CN202010043960.1A CN202010043960A CN111172594A CN 111172594 A CN111172594 A CN 111172594A CN 202010043960 A CN202010043960 A CN 202010043960A CN 111172594 A CN111172594 A CN 111172594A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
Abstract
The invention discloses a method for preparing a single crystal by electrical stimulation induction, which comprises the following steps: dissolving an organic semiconductor material in a polar solvent to obtain a sample solution, then dropwise adding the sample solution on a conductive substrate rich in an atomic-level repetitive lattice surface, and applying bias voltage and electric stimulation to the sample solution by adopting a scanning tunneling microscope to prepare a single crystal. The invention can prepare two-dimensional single crystal by electrical stimulation only under the conditions of room temperature and atmospheric pressure without high temperature and high pressure environment, can easily prepare single crystal at a solid-liquid interface by bias and current stimulation applied by a scanning tunnel microscope, and further can control the problem that the monomers are arranged in a required surface form conformation by utilizing the property that the prepared single crystal can be stably existed at the solid-liquid interface only under the current stimulation.
Description
Technical Field
The invention relates to the technical field of single crystal preparation, in particular to a method for preparing a single crystal by electrical stimulation induction.
Background
A substance has only one kind of crystal with a repeating cycle on a spatial axis, which is called a single crystal, and a crystal composed of multiple directions is called a polycrystal, wherein, since the single crystal has excellent electron transfer characteristics, the preparation of the single crystal has been a hot spot in the field of material science.
The development of the single crystal preparation methodology relies on the mastering of crystal growth steps, and the crystal growth process is mainly divided into two stages of nucleation and crystal growth, wherein the nucleation stage comprises the following steps: the matter is in a molten state or in a disordered state in a solution, if the environmental conditions are gradually changed (the matter is supersaturated due to cooling or solvent volatilization), the matter can improve the collision degree and converge into crystal nuclei; crystal growth stage: on the premise that crystal nuclei are formed, other disordered materials are regularly and continuously arranged around the crystal nuclei and extend outwards, and regular and ordered stacking is achieved.
At present, the methods for preparing single crystals commonly include a solvothermal method, a volatilization method, a melting method and a gas phase method, wherein the solvothermal method is a method of forcibly dissolving a substance which cannot be dissolved in a solvent at normal temperature and normal pressure in the solvent under the conditions of high temperature or high pressure to make the substance reach supersaturation degree, then nucleating and growing crystals by means of cooling and the like, the solvothermal method is suitable for substances which cannot be dissolved in various solvents at normal temperature and normal pressure, the industrially common solvothermal method is used for growing single crystals of metal oxides such as aluminum oxide, titanium dioxide and the like, the volatilization method is a method of dissolving the substance in a polar solvent, target molecules are precipitated in a single crystal form by volatilization of the solvent, the volatilization method is the most traditional, direct and effective method, but the consumption time is long, the melting method is a method of heating the target substance to make the target substance form single crystals after controlled solidification under certain, the vapor phase method is a method in which a target substance is formed into a saturated vapor by sublimation, evaporation, or the like, and a single crystal is formed by condensation or the like.
The existing single crystal growth methods have certain defects and limitations, for example, the single crystal growth period of the solvothermal method is long, the temperature control requirement of the volatilization method is high, the melting method is not suitable for substances with high melting point and easy decomposition at the melting temperature, and the temperature gradient and the airflow velocity are difficult to control by the gas phase method.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a method for preparing single crystal by electrical stimulation induction, which aims to solve the technical problem of high requirement for preparation conditions of the existing single crystal growth method.
The technical scheme of the invention is as follows:
a method for preparing single crystal by electric stimulation induction, which comprises the following steps:
dissolving an organic semiconductor material in a polar solvent to obtain a sample solution;
and dropwise adding the sample solution on a conductive substrate with an atomic-level repetitive lattice surface, and applying bias voltage and electric stimulation to the sample solution by adopting a scanning tunneling microscope to prepare the single crystal.
The method for preparing the single crystal by electric stimulation induction, wherein the step of dissolving the organic semiconductor material in polar solvent to obtain a sample solution comprises the following steps:
dissolving an organic semiconductor material in a polar solvent, and carrying out ultrasonic treatment to prepare a saturated solution of the organic semiconductor material;
and diluting the saturated solution of the organic semiconductor material to obtain a sample solution.
The method for preparing the single crystal through electrical stimulation induction comprises the following steps of preparing a polar solvent, and performing electrical stimulation induction on the polar solvent to obtain the single crystal.
The method for preparing the single crystal through electrical stimulation induction comprises the following steps of applying bias voltage to the sample solution by adopting a scanning tunneling microscope and preparing the supermolecule single crystal through electrical stimulation, wherein the step comprises the following steps:
organic semiconductor material molecules in the sample solution are deposited on the surface of the conductive base material with the atomic level repeat lattice surface under the conditions of bias voltage and electric stimulation;
and carrying out concentrated scanning stimulation on the sample solution by using a probe of the scanning tunneling microscope, so that the molecules of the organic semiconductor material in the sample solution are arranged and grown to form a single crystal.
The method for preparing the single crystal by electric stimulation induction comprises the following steps of performing concentrated scanning stimulation on the sample solution by using a probe of the scanning tunneling microscope, and enabling molecules of the organic semiconductor material in the sample solution to be arranged and grown to form the single crystal:
and when the epitaxial regrown crystal appears, moving the probe of the scanning tunnel microscope to the side far away from the epitaxial regrown crystal, and eliminating the epitaxial regrown crystal.
The method for preparing the single crystal by electric stimulation induction comprises the following steps of performing concentrated scanning stimulation on the sample solution by using a probe of the scanning tunneling microscope, and enabling molecules of the organic semiconductor material in the sample solution to be arranged and grown to form the single crystal:
when a fracture defect part appears, stimulating the fracture defect part by using the probe of the scanning tunneling microscope, attracting the free organic semiconductor material molecules in the sample solution to fill the defect, and self-repairing the fracture defect part.
The method for preparing the single crystal through electric stimulation induction is characterized in that the organic semiconductor material is TPTC.
The method for preparing the single crystal through electric stimulation induction is characterized in that the bias voltage applied to the TPTC solution by adopting a scanning tunnel microscope is 1.7-0.24V.
The method for preparing the single crystal by electric stimulation induction is characterized in that the current of the electric stimulation is 0.07 nA.
The method for preparing the single crystal through electric stimulation induction is characterized in that the bias voltage is regulated and controlled through a voltage controller of the scanning tunneling microscope.
Has the advantages that: the invention provides a method for preparing a single crystal by electrical stimulation induction, which does not need high-temperature and high-pressure environment, prepares a two-dimensional single crystal by electrical stimulation only under the conditions of room temperature and atmospheric pressure, can easily prepare the single crystal at a solid-liquid interface by bias voltage and current stimulation applied by a scanning tunnel microscope, and further can control the problem that monomers are arranged in a required surface form conformation by utilizing the property that the prepared single crystal can be stably existed at the solid-liquid interface only under the current stimulation.
Drawings
FIG. 1 is a flow chart of a preferred embodiment of a method for preparing single crystals by electrical stimulation induction according to the present invention.
FIG. 2 is an STM diagram of a pore-like structure formed by TPTC molecules under negative bias in a method for preparing single crystals by electric stimulation induction.
FIG. 3 is an STM diagram of TPTC single crystal in a method for preparing single crystal by electrical stimulation induction.
Fig. 4 is a molecular structure diagram of three types of crystal forms formed by TPTC molecules under positive bias in a method for preparing single crystals by electrical stimulation induction according to the present invention.
FIG. 5 is a diagram of STM after "epitaxial regrowth" and self-healing occurred during the growth of TPTC single crystal in the present invention.
FIG. 6 is a diagram of the self-repairing process when the crystal arrangement of the breakage and even the reverse hand shape occurs in the growth process of the TPTC single crystal.
FIG. 7 is a diagram of STM for preparing R type TPTC single crystal, S type TPTC single crystal and head-to-head type TPTC single crystal in the present invention.
Detailed Description
The present invention provides a method for preparing a single crystal by electrical stimulation induction, and the present invention is further described in detail below in order to make the objects, technical solutions, and effects of the present invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
A method for preparing single crystal by electric stimulation induction, which comprises the following steps:
s10, dissolving the organic semiconductor material in a polar solvent to obtain a sample solution;
s20, dripping the sample solution on a conductive substrate with rich atomic-level repeated lattice surfaces, and applying bias voltage and electric stimulation to the sample solution by adopting a scanning tunneling microscope to prepare the single crystal.
Based on the problems that the existing single crystal preparation methods are all carried out under high temperature or high pressure conditions, the preparation conditions are harsh, and all have certain limitations, the present embodiment provides a method for preparing single crystals by electrical stimulation induction, which comprises the steps of firstly, dissolving an organic semiconductor material in a polar solvent to obtain a sample solution, then, sucking the sample solution, dripping the sample solution on a conductive substrate rich in an atomic-level repeating lattice surface in a scanning tunnel microscope, and applying bias voltage and electrical stimulation to the sample solution by using the scanning tunnel microscope to prepare the single crystals, wherein the organic semiconductor material is an aromatic compound with a carboxylic acid group, such as 3,3', 5,5' -biphenyl-tetracarboxylic acid, 1,3, 5-benzenetricarboxylic acid, and the like, and the conductive substrate rich in the atomic-level repeating lattice surface can be a highly oriented pyrolytic graphite substrate, Gold, silver, copper, etc.
The basic principle of the scanning tunneling microscope is that an electric field bias is applied to a probe and an atomic-scale smooth and flat conductive substrate, when the distance between the tip of the probe and a sample is very close, tunneling current is generated, and the change of surface nanometer-scale morphology is presented through the feedback of the current.
In this embodiment, the process of nucleation and crystal growth of the organic semiconductor molecular material is controlled at the liquid-solid interface of the sample solution by using the scanning tunneling microscope, and can be performed under normal pressure and normal temperature, and simultaneously, homogeneous nucleation and single crystal growth are achieved without adding any nucleation, and compared with the single crystal growth in the conventional sense, the growth process of the single crystal can be observed on a nanometer scale by using the observation window of the scanning tunneling microscope.
In some embodiments, the step of dissolving the organic semiconductor material in a polar solvent to obtain a sample solution comprises:
dissolving an organic semiconductor material in a polar solvent, and carrying out ultrasonic treatment to prepare a saturated solution of the organic semiconductor material;
and diluting the saturated solution of the organic semiconductor material to obtain a sample solution.
In this embodiment, an organic semiconductor material is dissolved in a polar solvent, and is subjected to ultrasonic treatment for 1 to 3 hours to prepare a saturated solution of the organic semiconductor material, and then the saturated solution is diluted, preferably, the saturated solution is diluted to 10% of the saturated concentration, so as to obtain a diluted sample solution, wherein the concentration of the saturated solution before dilution is too high, and thus, the molecules of the organic semiconductor material can be prevented from aggregating under a high electric field in a dilution manner, so as to affect subsequent single crystal preparation.
In this embodiment, the polar solvent is one or more of ethanol, acetic acid, methyl formate, chloroform, diethyl ether, ethyl acetate, n-butyl ether, trichloroethylene, tetrahydrofuran, and octanoic acid.
In some embodiments, the step of applying a bias voltage and an electrical stimulation to the sample solution using a scanning tunneling microscope to prepare a single crystal comprises:
organic semiconductor material molecules in the sample solution are deposited on the surface of the conductive base material with the atomic level repeat lattice surface under the conditions of bias voltage and electric stimulation;
and carrying out concentrated scanning stimulation on the sample solution by using a probe of the scanning tunneling microscope, so that the molecules of the organic semiconductor material in the sample solution are arranged and grown to form a single crystal.
In this embodiment, a scanning tunneling microscope is used to apply a bias voltage and an electrical stimulus to a sample solution, the electrical stimulus generates a tunneling current when the distance between the probe tip and the sample is very close, the organic semiconductor material molecules in the sample solution, after being subjected to the bias voltage and the electrical stimulus, are firstly deposited on the surface of the highly oriented pyrolytic graphite substrate, and then under the condition of continuing to apply the bias voltage and the electrical stimulus, the organic semiconductor molecules form crystal nuclei on the surface of the conductive substrate rich in the atomic-level repeating lattice surface, further, the organic semiconductor molecules are continuously arranged on the formed crystal nuclei to form a single crystal, in this embodiment, the applied bias voltage affects the quality of the prepared single crystal, when the applied bias voltage is larger, the homogeneous nucleation rate is accelerated, a polycrystalline phase is formed, and when the bias voltage value is smaller, the surface nucleation rate is also reduced, and most of the formed single crystals are single crystals. Meanwhile, in the crystal growth process, observation can be carried out through a window of a scanning tunnel microscope.
Further, in this embodiment, the bias voltage is controlled by a potential controller of the scanning tunneling microscope.
The invention will be further illustrated below by way of example of the organic semiconductor material TPTC (1,1 ', 4 ', 1 ' -terphenyl-3, 3', 5,5' -tetracarboxylic acid):
firstly, TPTC is dissolved in a polar solvent octanoic acid for 1.5 hours through ultrasound to prepare a saturated solution, then the saturated solution is diluted to 10% of the saturated concentration, the diluted solution is dropwise added on the surface of a clean highly-oriented pyrolytic graphite substrate, wherein the highly-oriented pyrolytic graphite substrate adopts a 3M adhesive tape to remove surface impurities in advance, a scanning tunnel microscope (keysight5500) is used for observing TPTC molecules, the TPTC molecules are in a strip shape under the scanning tunnel microscope, and then the TPTC molecules are deposited on the surface of the highly-oriented pyrolytic graphite substrate under the conditions that the negative bias voltage is-0.9V and the tunneling current is 0.07 nA.
As shown in fig. 2, fig. 2a is a molecular formula of TPTC, fig. 2b is a model diagram of pore-like arrangement of TPTC molecules under negative bias, and fig. 2c is a pore-like arrangement diagram of TPTC observed under a scanning tunneling microscope under conditions of negative bias of 0.9V and tunneling current of 0.07nA, and it can be seen from the diagram that under negative bias, hydrogen ions in a polar solution of TPTC tend to converge on the surface of the highly oriented pyrolytic graphite substrate, so that TPTC molecules on the surface are connected by hydrogen bonds, thereby exhibiting a pore-like arrangement structure.
Thereafter, a positive bias is applied to the highly oriented pyrolytic graphite substrate, the applied positive bias attracts TPTC molecules dissociated in the polar solvent to the surface of the highly oriented pyrolytic graphite substrate, at this time, hydrogen bonds are broken, so that the formed porous arrangement structure is unstable, and the TPTC molecules are arranged in a pi-pi overlapping manner, so that three types of compact crystals are easily formed, as shown in fig. 3, TPTC forms a single crystal on the surface of the highly oriented pyrolytic graphite substrate, wherein the single crystal comprises three types of compact crystals, namely an "R" type and an "S" type, which are mutually chiral, and an "head-to-head" type, and a schematic molecular structure diagram of the three crystal forms is shown in fig. 4, wherein the "H" type represents the "head-to-head" type.
In this embodiment, under normal pressure and normal temperature conditions, when a positive bias of 0.5V is applied, the TPTC molecules on the surface of the highly oriented pyrolytic graphite substrate will nucleate and grow, resulting in a tightly arranged polycrystalline phase on the surface, and as the positive bias increases, the polycrystalline phase will increase, and the area of the single crystal phase will decrease, so that the bias is an important condition for controlling the growth of the TPTC crystals. The following table shows the crystal types prepared under different crystal growth conditions:
further, for the three types of compact crystals prepared, one of the crystals can be selected for concentrated scanning stimulation according to actual requirements, so that the surrounding TPTC molecules continue to grow on the crystal in an aligned manner, thereby forming a single crystal.
Furthermore, during the growth of the single crystal, there may occur a condition of "epitaxial regrowth" in different directions, that is, other types of crystals reappear in the prepared single crystal range, for example, when epitaxial regrowth crystals appear on the left side, the scanning range may be moved to the right side, the epitaxial regrowth crystals are directly removed from the scanning range, and the crystal phase lacking current stimulation and instability thereof are finally eliminated, as shown in fig. 5, when "epitaxial regrowth" appears on the left side of the crystal phase, that is, the left side of fig. 5, the probe is controlled to move and scan to the right side in the opposite direction, and the left side is cleared by the scanning of the probe, thereby obtaining an area of about 100nm2The single crystal of (1). In addition, common defects such as fracture and the like can be inevitably generated in the single crystal growth process, and the defects can be filled by attracting free organic semiconductor material molecules in a sample solution under the action of tunneling current and bias voltage, so that the self-repairing process of the single crystal is realized, fig. 6 is a self-repairing process diagram when the fractured and even reverse-hand-shaped crystals are arranged in the TPTC single crystal growth process, a fractured and reverse-hand-shaped crystal area is determined in a circle in fig. 6a, fig. 6b is a repairing process, and fig. 6c is a repaired state, so that it can be obviously seen that the reverse-hand-shaped molecules cause smaller volume and unstable interior under the stimulation of a probe, and can be gradually converted into more stable same-direction hand-shaped arrangement, and the purpose of self-repairing is achieved.
In this embodiment, the forward bias voltage can be set to 0.17V, the tunneling current can be set to 0.07nA, and the tunneling current can be set to 100nm2A single crystal is obtained within the range of (1).
Further, a suitable type of crystal nucleus can be selected through a window of a scanning tunneling microscope, and at the same time, different types of single crystals are obtained, as shown in fig. 7, R-type TPTC single crystals, S-type TPTC single crystals, and head-to-head type TPTC single crystals can be prepared, respectively.
In summary, the present invention provides a method for preparing a single crystal by electrical stimulation induction, which eliminates the harsh conditions required for preparing a single crystal of an organic semiconductor material by a solution method, does not require high temperature and high pressure environments, prepares a two-dimensional single crystal by electrical stimulation only under the conditions of room temperature and atmospheric pressure, and can easily prepare a single crystal at a solid-liquid interface by bias and current stimulation applied by a scanning tunneling microscope.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method for preparing single crystal by electric stimulation induction, which is characterized by comprising the following steps:
dissolving an organic semiconductor material in a polar solvent to obtain a sample solution;
and dropwise adding the sample solution on a conductive substrate with an atomic-level repetitive lattice surface, and applying bias voltage and electric stimulation to the sample solution by adopting a scanning tunneling microscope to prepare the single crystal.
2. The method for preparing a single crystal by electric stimulation induction as set forth in claim 1, wherein the step of dissolving the organic semiconductor material in a polar solvent to obtain a sample solution comprises:
dissolving an organic semiconductor material in a polar solvent, and carrying out ultrasonic treatment to prepare a saturated solution of the organic semiconductor material;
and diluting the saturated solution of the organic semiconductor material to obtain a sample solution.
3. The method for preparing a single crystal by electrical stimulation induction according to claim 2, wherein the polar solvent is one or more of ethanol, acetic acid, methyl formate, chloroform, diethyl ether, ethyl acetate, n-butyl ether, trichloroethylene, tetrahydrofuran, and octanoic acid.
4. The method for preparing single crystal through electric stimulation induction as claimed in claim 1, wherein the step of applying bias voltage to the sample solution by using a scanning tunneling microscope and preparing single crystal through electric stimulation comprises the following steps:
the organic semiconductor material molecules in the sample solution are deposited on the surface of the conductive substrate with the atomic level repeat lattice surface under the conditions of bias voltage and electric stimulation of tunneling current;
and carrying out concentrated scanning stimulation on the sample solution by using a probe of the scanning tunneling microscope, so that the molecules of the organic semiconductor material in the sample solution are arranged and grown to form a single crystal.
5. The method for preparing the single crystal through the induction of the electrical stimulation according to claim 4, wherein the step of performing concentrated scanning stimulation on the sample solution by using the probe of the scanning tunneling microscope so that the molecules of the organic semiconductor material in the sample solution are aligned and grown to form the single crystal comprises the following steps of:
and when the epitaxial regrown crystal appears, moving the probe of the scanning tunnel microscope to the side far away from the epitaxial regrown crystal, and eliminating the epitaxial regrown crystal.
6. The method for preparing the single crystal through the induction of the electrical stimulation according to claim 4, wherein the step of performing concentrated scanning stimulation on the sample solution by using the probe of the scanning tunneling microscope so that the molecules of the organic semiconductor material in the sample solution are aligned and grown to form the single crystal comprises the following steps of:
when a fracture defect part appears, stimulating the fracture defect part by using the probe of the scanning tunneling microscope, attracting the free organic semiconductor material molecules in the sample solution to fill the defect, and self-repairing the fracture defect part.
7. The method for preparing a single crystal by electrical stimulation induction as set forth in claim 1, wherein the organic semiconductor material is TPTC.
8. The method for preparing a single crystal by electric stimulation induction as claimed in claim 7, wherein the TPTC solution is biased at 1.7-0.24V by using a scanning tunneling microscope.
9. The method for producing a single crystal by electric stimulation induction as claimed in claim 7, wherein the electric current of the electric stimulation is 0.07 nA.
10. The method for preparing a single crystal by electric stimulation induction as claimed in claim 1, wherein the bias voltage is controlled by a potential controller of the scanning tunneling microscope.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044611C (en) * | 1995-06-08 | 1999-08-11 | 复旦大学 | Method of preparing high molecular microlite membrane by polymerizing of scan tunnel microtechnique |
| CN1363936A (en) * | 2002-02-05 | 2002-08-14 | 复旦大学 | Process for preparing organic conducting wire by electric induced growth techinque |
| US20100258786A1 (en) * | 2009-04-09 | 2010-10-14 | Northwestern University | Self-assembled organic monolayers on graphene and methods of making and using |
| CN106335874A (en) * | 2016-09-21 | 2017-01-18 | 国家纳米科学中心 | Pi-conjugated organic semiconductor molecular self-assembly structure and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044611C (en) * | 1995-06-08 | 1999-08-11 | 复旦大学 | Method of preparing high molecular microlite membrane by polymerizing of scan tunnel microtechnique |
| CN1363936A (en) * | 2002-02-05 | 2002-08-14 | 复旦大学 | Process for preparing organic conducting wire by electric induced growth techinque |
| US20100258786A1 (en) * | 2009-04-09 | 2010-10-14 | Northwestern University | Self-assembled organic monolayers on graphene and methods of making and using |
| CN106335874A (en) * | 2016-09-21 | 2017-01-18 | 国家纳米科学中心 | Pi-conjugated organic semiconductor molecular self-assembly structure and preparation method thereof |
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