CN111162018A - Method for adjusting zero position of thin film sensor through plasma etching - Google Patents
Method for adjusting zero position of thin film sensor through plasma etching Download PDFInfo
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- CN111162018A CN111162018A CN201911349059.0A CN201911349059A CN111162018A CN 111162018 A CN111162018 A CN 111162018A CN 201911349059 A CN201911349059 A CN 201911349059A CN 111162018 A CN111162018 A CN 111162018A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a method for adjusting the zero position of a thin film sensor by plasma etching, belonging to the technical field of sensor measurement. The method adopts plasma etching to etch the zero adjustment resistor on the bridge arm of the Wheatstone bridge, and the voltage output of the Wheatstone bridge is changed by adjusting the resistance value of the bridge arm of the Wheatstone bridge, thereby realizing the zero adjustment of the whole thin film sensor. The method can realize zero adjustment of the thin film sensor with larger initial zero offset value, the adjustment process is environment-friendly and pollution-free, and the use temperature range of the adjusted thin film sensor is wide.
Description
Technical Field
The invention relates to a method for adjusting the zero position of a thin film sensor by plasma etching, belonging to the technical field of sensor measurement.
Background
With the rapid development of modern science and technology, many military carrier rockets and missile flight measurement fields need high temperature resistant, corrosion resistant and high reliability sensors for measurement, and the film sensor adopts the sputtering process technology to sputter metal strain materials on an elastic sensitive element to realize the interatomic bonding of pure physical characteristics, so that the mode of the traditional adhesive strain gauge type sensor is changed in principle, and the defects of failure, low reliability and narrow use temperature range of the traditional sensor caused by the service life of an adhesive are overcome. However, since environmental factors affect that the sensor cannot have a zero output even under no load, it is desirable to make the zero output of the sensor as small as possible by circuit compensation, and the thin film sensor, like other sensors, is also subjected to zeroing.
The current zero adjustment mode of the film sensor is completed by adopting a manganese copper wire or a laser cutting mode. For the manganese copper wire, the larger the zero adjustment range is, the larger the compensation resistance value is, the larger the length of the required manganese copper wire is, the larger the manganese copper wire is after being wound together, and the structural size of the thin film sensor is limited, so that the manganese copper wire is only used for adjusting the zero adjustment range in a smaller way; in addition, due to the limitation of the use temperature range of the manganese copper wire, the thin film sensor is only used for testing within 200 ℃. For the zero position adjustment of laser cutting, certain laser energy is adopted to cut and ablate on the surface of a metal film, and because the width of the strain resistor graph lines is micron-sized, the cutting position is limited, and the required zero position requirement is still not met when the film sensor with large zero position deviation is cut at multiple positions; meanwhile, because the metal film is ablated by using certain laser energy to realize zero adjustment, the ablated metal film has serious boundary saw teeth, the cut end face is not smooth and flat, and the cutting defect can cause zero drift of the thin film sensor when the thin film sensor is electrified for use, so that the stability of the sensor is reduced.
Disclosure of Invention
Aiming at the defects of the existing zero adjustment method of the thin film sensor, the invention provides the method for adjusting the zero position of the thin film sensor by plasma etching, the method can realize the zero adjustment of the thin film sensor with larger initial zero offset value, the adjustment process is environment-friendly and pollution-free, and the application temperature range of the adjusted thin film sensor is wide.
The purpose of the invention is realized by the following technical scheme.
A method for adjusting the zero position of a thin film sensor by plasma etching is characterized in that four strain resistors (or called thin film resistors) in the thin film sensor are connected through a metal thin film to form a Wheatstone bridge, pressure signals sensed by the strain resistors are converted into voltage signals to be output through the Wheatstone bridge, the voltage output of the Wheatstone bridge is changed by adjusting the resistance value of a bridge arm, so that the zero position adjustment of the whole thin film sensor is realized, and the specific steps of the resistance value adjustment of the bridge arm are as follows:
setting more than one graphic mask corresponding to zero adjustment resistors with different resistance values on each Wheatstone bridge arm, selecting one strain resistor with a smaller resistance value and a resistance value to be adjusted from two strain resistors to be adjusted according to an initial zero offset value of the thin film sensor, selecting the zero adjustment resistor with the resistance value close to the resistance value to be adjusted on the bridge arm corresponding to the strain resistor to be adjusted, manufacturing the corresponding graphic mask, etching the graphic mask corresponding to the zero adjustment resistor by adopting plasma to form the zero adjustment resistor, and realizing the adjustment of the bridge arm resistance value, namely realizing the zero adjustment of the thin film sensor.
Wherein the thickness of the film layer at the position of the Wheatstone bridge arm where the zero adjustment resistor needs to be etched is equal to that of the film layer of the strain resistor, and preferably 200 nm-300 nm; the material of the metal film is the same as that of the film layer of the strain resistor, and preferably nickel-chromium alloy; the initial zero offset value of the film sensor is U0If the resistance value of the zero adjustment resistor needing etching is Rz, then U0：Rz＝(0.3～0.5)mV：1Ω。
The preparation method of the zero adjustment resistor comprises the following specific steps:
(1) after the strain resistor of the thin film sensor is manufactured, testing the initial zero position of the thin film sensor, and determining the resistance value and the etching position of the zero position adjusting resistor needing to be etched;
(2) coating a positive photoresist on the surface of a film layer of the strain resistor, drying, then manufacturing a mask of a plasma etching pattern on the surface of the positive photoresist by adopting an ultraviolet exposure method, and then developing and fixing the plasma etching pattern;
(3) loading the developed and fixed film sensor into vacuum chamber, and vacuumizing to a vacuum degree of less than 1.0 × 10-3Pa, introducing argon gas to make the vacuum degree reach (2.0 +/-0.2) multiplied by 10-2Pa, rotating the workbench to 30-45 degrees, ionizing argon by adopting ion energy of (500 +/-5) eV to form plasma, and etching by adopting the plasma to form a zero adjustment resistor.
Further, the thickness of the positive photoresist coated on the surface of the film layer of the strain resistor is not less than 10 times of the thickness of the strain resistor film layer.
Has the advantages that:
the method adopts the plasma to etch the zero adjustment resistor on the bridge arm of the Wheatstone bridge, the Wheatstone bridge voltage output is changed by adjusting the resistance value of the bridge arm of the Wheatstone bridge, so that the zero adjustment of the whole thin film sensor is realized, the process of adjusting the zero of the thin film sensor by adopting the method is environment-friendly and pollution-free, the zero adjustment of the thin film sensor with larger initial zero deviation value can be realized, and the use temperature of the adjusted thin film sensor is within 400 ℃.
Drawings
FIG. 1 is a schematic diagram of a Wheatstone bridge composed of strain resistors in a thin film sensor
FIG. 2 is a schematic diagram of strain resistance before null adjustment
FIG. 3 is a schematic diagram of the preparation of zero adjustment resistor
FIG. 4 is a schematic diagram of strain resistance after null adjustment
Wherein R is1、R2、R3、R4Is HuisFour strain resistances of the bridge, Rz being the null adjustment resistance, U0The zero output voltage of the Wheatstone bridge is shown, and the supply voltage of the Wheatstone bridge is shown as E.
Detailed Description
The invention is further illustrated by the following figures and detailed description, wherein the process is conventional unless otherwise specified, and the starting materials are commercially available from a public disclosure without further specification.
Example 1
As shown in FIG. 1, the four strain resistances in the thin film sensor are respectively denoted as R1、R2、R3、R4The four resistors are connected through a metal film to form a Wheatstone bridge; the film layer materials of the four strain resistors and the film layer material of the metal film are all nickel-chromium alloy, and the film layer thicknesses of the four strain resistors are the same as those of the positions, needing to be etched, of the zero adjustment resistors on the bridge arms of the Wheatstone bridge and are 200 nm;
the method for adjusting the zero position of the film sensor by adopting plasma etching comprises the following steps:
(1) performing initial zero position test on the thin film sensor, and measuring that the initial zero position deviation value is 20mV, wherein the resistance value of the zero position adjusting resistor to be etched is 40 omega; meanwhile, the formula U is calculated according to the zero position of the Wheatstone bridge of the sensor0＝E×(R1×R3-R2×R4)/[(R1+R2)×(R3+R4)]Knowing that to make the zero theoretical value of the sensor approach 0mV, it is necessary to adjust the strain resistance R2And R4A strain resistor with smaller middle resistance value (the strain resistor needing to be adjusted when the initial zero offset value is larger than zero is R2And R4The smaller of the medium resistance values; the strain resistance to be adjusted when the initial zero offset value is less than zero is R1And R3The one with the smaller middle resistance value), R in the present embodiment2The resistance value is smaller according to the value at R2Four graphic masks corresponding to the null adjustment resistors with different resistance values preset on the corresponding bridge arms are selected, and the graphic mask corresponding to the null adjustment resistor with the resistance value close to 40 omega is selectedEtching the film for the next step, and adjusting the strain resistance before the adjustment as shown in figure 2;
(2) coating a positive photoresist with the thickness of 5 mu m on the surface of the film layer of the strain resistor, drying, then manufacturing a mask of a plasma etching pattern on the surface of the positive photoresist by adopting an ultraviolet exposure method, and then developing and fixing the plasma etching pattern, as shown in figure 3;
(3) loading the developed and fixed film sensor into vacuum chamber, and vacuumizing to a vacuum degree of less than 1.0 × 10-3Pa, introducing 4.5-5.0 sccm argon gas to make the vacuum degree reach 2.0 × 10-2Pa, rotating the workbench to 45 degrees, ionizing argon gas by adopting ion energy of 500eV to form plasma, and etching by adopting the plasma to form a zero adjustment resistor, as shown in FIG. 4;
(4) and (3) placing the etched film sensor in an alcohol solution to clean and remove redundant positive photoresist, and then drying the film sensor by using nitrogen to finish the zero adjustment of the film sensor.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method for adjusting the zero position of a thin film sensor by plasma etching is characterized in that four strain resistors in the thin film sensor are connected through a metal thin film to form a Wheatstone bridge, and the method comprises the following steps: the method is characterized in that the voltage output of the Wheatstone bridge is changed by adjusting the resistance value of the bridge arm, so that the zero adjustment of the whole thin film sensor is realized.
2. The method for adjusting the zero position of the thin film sensor by plasma etching as claimed in claim 1, wherein: the specific steps of the bridge arm resistance value adjustment are as follows,
setting more than one graphic mask corresponding to zero adjustment resistors with different resistance values on each Wheatstone bridge arm, selecting one strain resistor with a smaller resistance value and a resistance value to be adjusted from two strain resistors to be adjusted according to an initial zero offset value of the thin film sensor, selecting the zero adjustment resistor with the resistance value close to the resistance value to be adjusted on the bridge arm corresponding to the strain resistor to be adjusted, manufacturing the corresponding graphic mask, etching the graphic mask corresponding to the zero adjustment resistor by adopting plasma to form the zero adjustment resistor, and realizing the adjustment of the bridge arm resistance value, namely realizing the zero adjustment of the thin film sensor.
3. The method for adjusting the zero position of the thin film sensor by plasma etching as claimed in claim 1 or 2, wherein: the thickness of a film layer at the position of the Wheatstone bridge arm where the zero adjustment resistor needs to be etched is equal to that of a film layer of the strain resistor, and the material of the metal film is the same as that of the film layer of the strain resistor.
4. The method for adjusting the zero position of the thin film sensor through plasma etching as claimed in claim 3, wherein: the thickness of the film layer of the strain resistor is 200 nm-300 nm.
5. The method for adjusting the zero position of the thin film sensor by plasma etching as claimed in claim 1 or 2, wherein: the film material of the strain resistor and the metal film are both made of nickel-chromium alloy.
6. The method for adjusting the zero position of the thin film sensor by plasma etching as claimed in claim 2, wherein: the initial zero offset value of the film sensor is U0If the resistance value of the zero adjustment resistor needing etching is Rz, then U0：Rz＝(0.3～0.5)mV：1Ω。
7. The method for adjusting the zero position of the thin film sensor by plasma etching as claimed in claim 2, wherein: the specific preparation steps of the zero adjustment resistor are as follows,
(1) after the strain resistor of the thin film sensor is manufactured, testing the initial zero position of the thin film sensor, and determining the resistance value and the etching position of the zero position adjusting resistor needing to be etched;
(2) coating a positive photoresist on the surface of a film layer of the strain resistor, drying, then manufacturing a mask of a plasma etching pattern on the surface of the positive photoresist by adopting an ultraviolet exposure method, and then developing and fixing the plasma etching pattern;
(3) loading the developed and fixed film sensor into vacuum chamber, and vacuumizing to a vacuum degree of less than 1.0 × 10-3Pa, introducing argon gas to make the vacuum degree reach (2.0 +/-0.2) multiplied by 10-2Pa, rotating the workbench to 30-45 degrees, ionizing argon by adopting ion energy of (500 +/-5) eV to form plasma, and etching by adopting the plasma to form a zero adjustment resistor.
8. The method for adjusting the zero position of the thin film sensor through plasma etching according to claim 7, wherein: the thickness of the positive photoresist coated on the surface of the film layer of the strain resistor is not less than 10 times of the thickness of the layer of the strain resistor film.
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