CN111146134A - Substrate mounting table, substrate processing apparatus, and substrate processing method - Google Patents

Substrate mounting table, substrate processing apparatus, and substrate processing method Download PDF

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Publication number
CN111146134A
CN111146134A CN201911060409.1A CN201911060409A CN111146134A CN 111146134 A CN111146134 A CN 111146134A CN 201911060409 A CN201911060409 A CN 201911060409A CN 111146134 A CN111146134 A CN 111146134A
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temperature control
plate
substrate
temperature
mounting table
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CN201911060409.1A
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CN111146134B (en
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佐佐木芳彦
町山弥
南雅人
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Abstract

The invention provides a substrate carrying table, a substrate processing device and a substrate processing method, which can perform processing with high in-plane uniformity when the substrate for FPD is etched. A substrate mounting table on which a substrate is mounted and temperature-adjusted when the substrate is processed in a processing container, the substrate mounting table comprising: a metal 1 st plate divided into a plurality of temperature control regions by gaps; and a metal 2 nd plate which is in contact with the 1 st plate and has a thermal conductivity lower than that of the 1 st plate, wherein each of the temperature control regions has a temperature control unit for performing a unique temperature control, and the 1 st plate having an upper surface on which the substrate is placed on the upper surface of the 2 nd plate.

Description

Substrate mounting table, substrate processing apparatus, and substrate processing method
Technical Field
The present disclosure relates to a substrate mounting table, a substrate processing apparatus, and a substrate processing method.
Background
Patent document 1 discloses a substrate mounting table including a metallic base material and an electrostatic chuck for adsorbing a substrate, wherein at least a portion of the base material in contact with the electrostatic chuck is made of martensitic stainless steel or ferritic stainless steel. According to the substrate mounting table disclosed in patent document 1 and the substrate processing apparatus including the substrate mounting table, it is possible to prevent the electrostatic chuck from being damaged due to a difference in thermal expansion between the base material and the electrostatic chuck.
Patent document 1: japanese patent laid-open publication No. 2017-147278
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a substrate mounting table and a substrate processing apparatus which are advantageous for performing a process with high in-plane uniformity when performing an etching process or the like on a substrate for a Flat Panel Display (hereinafter referred to as "FPD") in a manufacturing process of the FPD.
Means for solving the problems
One aspect of the present disclosure is a substrate mounting table on which a substrate is mounted and temperature-adjusted when the substrate is processed in a processing container, wherein,
the substrate mounting table includes:
a metal 1 st plate divided into a plurality of temperature control regions by gaps; and
a metal 2 nd plate which is in contact with the 1 st plate and has a thermal conductivity lower than that of the 1 st plate,
each temperature control region is provided with a temperature control part for performing the inherent temperature control,
the 1 st plate having an upper surface for mounting the substrate is mounted on an upper surface of the 2 nd plate.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, it is possible to provide a substrate mounting table, a substrate processing apparatus, and a substrate processing method that perform processing with high in-plane uniformity when performing etching processing or the like on a substrate for an FPD.
Drawings
Fig. 1 is a cross-sectional view showing an example of a substrate mounting table, a substrate processing apparatus, and a substrate processing method according to an embodiment.
Fig. 2 is a view from direction II-II of fig. 1, and is a cross-sectional view of the 1 st plate.
FIG. 3A is a top view of an example of a simulated 1 st plate.
FIG. 3B is a top view simulating another example of the 1 st plate.
FIG. 3C is a top view of yet another example of a simulated 1 st plate.
FIG. 3D is a plan view of still another example of a simulation of the 1 st plate.
Fig. 3E is a top view of yet another example of a simulated 1 st plate.
Fig. 4A is a side view of an example of a substrate stage model used for temperature analysis.
Fig. 4B is a side view of another example of a substrate stage model used in temperature analysis.
Fig. 4C is a view along direction C-C in fig. 4A and 4B, and is a cross-sectional view of the temperature adjustment plate model, and is a diagram showing the analysis temperature designation portion.
Fig. 5A is a graph showing a correlation between the number of discharges and the electrode temperature.
Fig. 5B is an enlarged view of a portion B of fig. 5A.
Fig. 6 is a diagram simulating a top view of a substrate mounting table applied in an experiment for verifying an etching rate and a selectivity.
Fig. 7 is a graph showing experimental results relating to the temperature dependence of the etching rate of the SiN film.
Fig. 8 is a graph showing the experimental results relating to the temperature dependence of the etching rate of the SiO film.
Fig. 9 is a graph showing the experimental results relating to the temperature dependence of the etching rate of the Si film.
FIG. 10 is a graph showing the results of an experiment relating to the temperature dependence of the SiO/Si selectivity.
Detailed Description
Hereinafter, a substrate mounting table, a substrate processing apparatus, and a substrate processing method according to embodiments of the present disclosure will be described with reference to the drawings. In the present specification and the drawings, substantially the same components may be denoted by the same reference numerals, and redundant description may be omitted.
[ embodiment ]
< substrate mounting table, substrate processing apparatus and substrate processing method >
First, an example of a substrate processing apparatus, a substrate processing method, and a substrate mounting table constituting the substrate processing apparatus according to the embodiment of the present disclosure will be described with reference to fig. 1 and 2. Here, fig. 1 is a cross-sectional view showing an example of a substrate mounting table and a substrate processing apparatus according to an embodiment. Also, FIG. 2 is a view from direction II-II of FIG. 1, and is a cross-sectional view of the 1 st plate.
The substrate processing apparatus 100 shown in fig. 1 is an Inductively Coupled Plasma (ICP) processing apparatus that performs various substrate processing methods on a substrate (hereinafter, simply referred to as a "substrate") G having a rectangular shape in a plan view for an FPD. Glass is mainly used as a material of the substrate, and depending on the application, a transparent synthetic resin or the like may be used. Here, the substrate processing includes etching processing, film formation processing using a CVD (Chemical Vapor Deposition) method, and the like. Examples of FPDs include Liquid Crystal Displays (LCDs), ElectroLuminescence (EL), and Plasma Display Panels (PDPs). The flat panel size of the FPD substrate is becoming larger with the generation, and the flat panel size of the substrate G processed by the substrate processing apparatus 100 includes at least a size from about 1500mm × 1800mm in the 6 th generation to about 2800mm × 3000mm in the 10 th generation. The thickness of the substrate G is about 0.5mm to several mm.
The substrate processing apparatus 100 shown in fig. 1 includes: a rectangular parallelepiped box-shaped processing container 10, a substrate mounting table 60 arranged in the processing container 10 and having a rectangular outer shape in plan view for mounting a substrate G, and a control unit 90.
The processing chamber 10 is partitioned into two upper and lower spaces by a dielectric plate 11, the upper space being an antenna chamber 12 forming an antenna chamber, and the lower space being a chamber 13 forming a processing chamber. In the processing chamber 10, a rectangular ring-shaped support frame 14 is disposed at a position that serves as a boundary between the chamber 13 and the antenna container 12, the support frame 14 is provided so as to protrude toward the inside of the processing chamber 10, and the dielectric plate 11 is placed on the support frame 14. The processing container 10 is grounded by a ground line 13 c.
The processing container 10 is made of metal such as aluminum, and the dielectric plate 11 is made of alumina (Al)2O3) Etc. ceramic, quartz.
An input/output port 13b for inputting/outputting the substrate G to/from the chamber 13 is opened in a side wall 13a of the chamber 13, and the input/output port 13b is openable/closable by a gate valve 20. The chamber 13 is adjacent to a transfer chamber (both not shown) of the inner package transfer mechanism, controls opening and closing of the gate valve 20, and inputs and outputs the substrate G through the input/output port 13b by the transfer mechanism.
A plurality of exhaust ports 13d are opened in the bottom of the chamber 13, a gas exhaust pipe 51 is connected to the exhaust ports 13d, and the gas exhaust pipe 51 is connected to an exhaust device 53 via an on-off valve 52. The gas exhaust pipe 51, the on-off valve 52, and the exhaust device 53 form a gas exhaust unit 50. The exhaust device 53 has a vacuum pump such as a turbo molecular pump, and evacuates the chamber 13 to a predetermined vacuum degree during processing. A pressure gauge (not shown) is provided at an appropriate position of the chamber 13, and monitoring information obtained by the pressure gauge is transmitted to the control unit 90.
A support beam for supporting the dielectric plate 11 is provided on the lower surface of the dielectric plate 11, and the support beam can also serve as the showerhead 30. The shower head 30 is formed of metal such as aluminum, and surface treatment based on anodic oxidation can be applied. A gas flow path 31 extending in the horizontal direction is formed in the showerhead 30, and the gas flow path 31 communicates with a gas ejection hole 32, and the gas ejection hole 32 extends downward and faces the processing space S located below the showerhead 30.
A gas supply pipe 41 communicating with the gas flow path 31 is connected to the upper surface of the showerhead 30, and is connected to a process gas supply source 44. An on-off valve 42 and a flow rate controller 43 such as a mass flow controller are inserted in the middle of the gas supply pipe 41. The process gas supply unit 40 is formed by a gas supply pipe 41, an opening/closing valve 42, a flow rate controller 43, and a process gas supply source 44. The gas supply pipe 41 branches at an intermediate point, and each branch pipe communicates with an on-off valve, a flow rate controller, and a process gas supply source (not shown) corresponding to the type of process gas. In the plasma processing, the process gas supplied from the process gas supply unit 40 is supplied to the showerhead 30 through the gas supply pipe 41 and is ejected into the process space S through the gas ejection holes 32.
A high-frequency antenna 15 is disposed in the antenna container 12. The high-frequency antenna 15 is formed by winding an antenna wire 15a made of a metal having good conductivity such as copper or aluminum in a ring shape or a spiral shape. For example, the loop-shaped antenna wire 15a may be arranged in multiple layers.
A feed member 16 extending above the antenna container 12 is connected to a terminal of the antenna wire 15a, a feed line 17 is connected to an upper end of the feed member 16, and the feed line 17 is connected to a high-frequency power supply 19 via a matching box 18 for impedance matching. An induced electric field is formed in the chamber 13 by applying a high-frequency power of, for example, 13.56MHz from the high-frequency power supply 19 to the high-frequency antenna 15. The process gas supplied from the showerhead 30 to the process space S is plasmatized by the induced electric field to generate inductively coupled plasma, and ions and radicals in the plasma are supplied to the substrate G. The high-frequency power supply 19 is a source for generating plasma, and as described in detail below, the high-frequency power supply 73 (an example of a power supply) connected to the substrate mounting table 60 serves as a bias source for attracting generated ions and imparting kinetic energy thereto. In this way, by generating plasma by inductive coupling in the ion source, and controlling the ion energy by connecting a bias source as another power source to the substrate mounting table 60, it is possible to independently perform the generation of plasma and the control of the ion energy, and it is possible to improve the degree of freedom in processing. The frequency of the high-frequency power output from the high-frequency power supply 19 is preferably set in the range of 0.1MHz to 500 MHz.
Next, the substrate mounting table 60 will be explained. As shown in fig. 1, the substrate mounting table 60 includes a1 st metal plate 61 partitioned by a plurality of temperature control regions 61a and 61b, and a2 nd metal plate 63 in contact with the temperature control regions 61a and 61 b. The temperature control regions 61a and 61b forming the 1 st plate 61 are divided into regions by a gap 66, and the temperature control regions 61a and 61b are continuous at upper and lower positions of the gap 66. That is, the gap 66 is formed with a hollow inside the 1 st plate 61. A2 nd plate 63 is connected to a lower surface of the 1 st plate 61.
The 1 st plate 61 has a rectangular shape in plan view and has a planar size approximately equal to that of the FPD mounted on the substrate mounting table 60. For example, the 1 st plate 61 shown in fig. 2 has a planar size similar to that of the substrate G to be mounted thereon, and the length t2 of the long side can be set to about 1800mm to 3000mm, and the length t3 of the short side can be set to about 1500mm to 2800 mm. The sum of the thicknesses of the 1 st plate 61 and the 2 nd plate 63 may be, for example, about 50mm to 100mm with respect to the plane size.
The 2 nd plate 63 disposed below the 1 st plate 61 is a metal plate having a thermal conductivity lower than that of the 1 st plate 61. For example, the 1 st plate 61 is formed of aluminum or an aluminum alloy. On the other hand, the 2 nd plate 63 is formed of stainless steel.
Aluminum, which is a material forming the 1 st plate 61, is a metal material having high thermal conductivity, and examples of JIS standard include a5052, a6061, and a 1100. The thermal conductivity of A5052 was 138W/mK, that of A6061 was 180W/mK, and that of A1100 was 220W/mK.
On the other hand, stainless steel, which is a material forming the 2 nd plate 63, is a metal material having a low thermal conductivity. The stainless steel includes martensitic stainless steel, ferritic stainless steel, and austenitic stainless steel.
The microstructure of the martensitic stainless steel is mainly formed of a martensite phase, and SUS403, SUS410, SUS420J1, and SUS420J2 are preferable as JIS standard. Examples of the other martensitic stainless steel include SUS410S, SUS440A, SUS410F2, SUS416, SUS420F2, and SUS 431. As for the thermal conductivity of the martensitic stainless steel, the thermal conductivity of SUS403 was 25.1W/mK, the thermal conductivity of SUS410 was 24.9W/mK, the thermal conductivity of SUS420J1 was 30W/mK, and the thermal conductivity of SUS440C was 24.3W/mK.
On the other hand, the microstructure of ferritic stainless steel is mainly formed of a ferrite phase, and SUS430 is preferable as JIS standard. Examples of the other ferritic stainless steel include SUS405, SUS430LX, SUS430F, SUS443J1, SUS434, and SUS 444. As for the thermal conductivity of ferritic stainless steel, the thermal conductivity of SUS430 was 26.4W/mK.
The microstructure of austenitic stainless steel is mainly formed of an austenite phase, and SUS303, SUS304, and SUS316 are preferable as JIS standards. As for the thermal conductivity of austenitic stainless steel, the thermal conductivity of SUS303 and SUS316 was 15W/m.K, and the thermal conductivity of SUS304 was 16.3W/m.K.
Thus, the thermal conductivity of stainless steel has a lower thermal conductivity of aluminum on the order of 1/5 to 1/10.
The laminate of the 1 st plate 61 and the 2 nd plate 63 is placed on a rectangular member 68 made of an insulating material, and the rectangular member 68 is fixed to the bottom plate of the chamber 13.
An electrostatic chuck 67 is formed on the upper surface of the 1 st plate 61 for mounting the substrate G, and the electrostatic chuck 67 includes a mounting surface on which the substrate G is directly mounted. The electrostatic chuck 67 is a dielectric coating formed by thermally spraying a ceramic such as alumina, and incorporates an electrode 67a having an electrostatic adsorption function. The electrode 67a is connected to a dc power supply 75 via a power supply line 74. When a switch (not shown) interposed between the power feeding lines 74 is opened by the control unit 90, a dc voltage is applied from the dc power supply 75 to the electrode 67a, thereby generating coulomb force. Due to the coulomb force, the substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 67 and held on the upper surface of the 1 st plate 61
The substrate mounting table 60 is composed of a1 st plate 61, a2 nd plate 63, and an electrostatic chuck 67. A temperature sensor such as a thermocouple (not shown) is disposed on the upper surface of the electrostatic chuck 67 (the mounting surface of the substrate G) or the 1 st plate 61, and the temperature sensor can monitor the temperature of the upper surface of the electrostatic chuck 67 or the temperatures of the 1 st plate 61 and the substrate G as needed. A plurality of lift pins (not shown) for delivering and receiving the substrate G are provided on the substrate mounting table 60 so as to freely protrude and retract from the upper surface of the substrate mounting table 60 (the upper surface of the electrostatic chuck 67).
As shown in fig. 2, the 1 st plate 61 has an outer temperature control region 61b located outside the rectangular frame-shaped gap 66 and an inner temperature control region 61a located inside the gap 66, and the outer temperature control region 61b and the inner temperature control region 61a are continuous in the upper and lower sides of the gap 66.
The temperature control medium flow path 62a is provided in the inner temperature control region 61a, and the temperature control medium flow path 62a extends in a serpentine manner over the entire region of the rectangular plane. In the temperature control medium flow path 62a illustrated in the figure, for example, one end 62a1 of the temperature control medium flow path 62a is an inflow part of the temperature control medium, and the other end 62a2 of the temperature control medium flow path 62a is an outflow part of the temperature control medium.
On the other hand, in the outer temperature control region 61b, a temperature control medium flow path 62b is provided over the entire rectangular frame-shaped region, and the temperature control medium flow path 62b continues an outward path and a return path through which the temperature control medium flows. In the temperature control medium flow path 62b illustrated in the figure, for example, one end 62b1 of the temperature control medium flow path 62b is an inflow part of the temperature control medium, and the other end 62b2 of the temperature control medium flow path 62b is an outflow part of the temperature control medium.
As the temperature control medium, a liquid heat medium, for example, a refrigerant, for which Galden (registered trademark), Fluorinert (registered trademark), or the like is used.
The temperature control medium flow path 62a included in the inner temperature control region 61a and the temperature control medium flow path 62b included in the outer temperature control region 61b are examples of the "temperature control unit". The temperature control unit includes a heater and the like in addition to the temperature control medium flow paths 62a and 62b through which the temperature control medium flows. More specifically, the inner temperature control region 61a and the outer temperature control region 61b may have a configuration having only a heater, a configuration having both a temperature control medium flow path and a heater, and the like, in addition to the configuration illustrated in the figure in which only a temperature control medium flow path is provided as a temperature control unit. Further, depending on the application, one may have a temperature control medium flow path and the other may have a heater. The temperature control unit does not include a temperature control source such as the coolers 81 and 84 in the illustrated example, but refers to only a temperature control member built in the 1 st plate 61 constituting the substrate mounting base 60. The heater as a resistor is formed of tungsten, molybdenum, or a compound of any of these metals with alumina, titanium, or the like.
Returning to fig. 1, both ends of the temperature control medium flow path 62a built in the inner temperature control region 61a communicate with the delivery pipe 64a and the return pipe 64b, the delivery pipe 64a supplies the temperature control medium to the temperature control medium flow path 62a, and the return pipe 64b discharges the temperature control medium that has been heated by flowing through the temperature control medium flow path 62 a. The delivery pipe 64a communicates with the delivery channel 82, the return pipe 64b communicates with the return channel 83, and the delivery channel 82 and the return channel 83 communicate with the cooler 81. The cooler 81 includes a main body that controls the temperature and discharge flow rate of the temperature control medium, and a pump (both not shown) that pressurizes and conveys the temperature control medium.
The cooler 81, the feed passage 82, and the return passage 83 form a unique temperature control source 80A in the inner temperature control region 61 a.
On the other hand, both ends of the temperature control medium flow path 62b built in the outer temperature control region 61b communicate with the delivery pipe 64c and the return pipe 64d, the delivery pipe 64c supplies the temperature control medium to the temperature control medium flow path 62b, and the return pipe 64d discharges the temperature control medium that has been heated by passing through the temperature control medium flow path 62 b. The delivery pipe 64c communicates with the delivery passage 85, the return pipe 64d communicates with the return passage 86, and the delivery passage 85 and the return passage 86 communicate with the cooler 84. The cooler 84 includes a main body that controls the temperature and discharge flow rate of the temperature control medium, and a pump (both not shown) that pressurizes and conveys the temperature control medium.
The cooler 84, the feed passage 85, and the return passage 86 form a unique temperature control source 80B in the outside temperature control region 61B.
The substrate mounting table 60 is a mounting table for performing temperature control in divided regions by supplying temperature control media having different temperatures to the central region corresponding to the inner temperature control region 61a and the edge regions corresponding to the outer temperature control region 61b, respectively, to thereby control the temperatures of the respective regions to be different. Therefore, the inner temperature control region 61a and the outer temperature control region 61B have the unique temperature control sources 80A and 80B, respectively.
In addition to the common cooler, for example, the following configuration is possible: temperature control mechanisms such as heaters are provided in the conveyance flow paths 82 and 85, and after the temperature of the temperature control medium is changed by the temperature control mechanisms, the temperature control media having different temperatures are supplied to the temperature control medium flow paths 62a and 62 b. When the temperature control unit includes a heater, a direct current power supply (heater power supply) connected to the heater via a power supply line is included in the temperature control source.
In the case where a temperature sensor such as a thermocouple is disposed on the upper surface of the electrostatic chuck 67 or the 1 st plate 61, monitoring information obtained by the temperature sensor is transmitted to the control unit 90 as needed. Then, based on the transmitted monitoring information, the temperature control of (the electrostatic chuck 67 of) the substrate mounting table 60 or the 1 st plate 61 and the substrate G is performed by the control section 90. More specifically, the temperature and the flow rate of the temperature control medium supplied from the coolers 81 and 84 to the conveyance channels 82 and 85 are adjusted by the control unit 90. Further, by circulating the temperature control medium whose temperature and flow rate have been adjusted through the temperature control medium flow paths 62a and 62b, the temperature control of the center region and the edge region of the substrate mounting base 60 can be controlled at the respective unique temperatures. The following conditions are established: a heat transfer gas such as He gas is supplied from a heat transfer gas supply portion through a supply passage (both not shown) between the electrostatic chuck 67 and the substrate G. The electrostatic chuck 67 has a plurality of through holes (not shown), and the 2 nd plate 63 and the like are embedded with supply flow paths (not shown). By supplying the heat transfer gas to the lower surface of the substrate G through the supply flow path, the through hole, and the through hole of the electrostatic chuck 67, the temperature of the temperature-controlled substrate mounting table 60 is rapidly transferred to the substrate G through the heat transfer gas, and the temperature of the substrate G is controlled.
As shown in fig. 1, a stepped portion is formed by the outer periphery of the electrostatic chuck 67, the outer periphery of the 1 st plate 61, and the upper surface of the rectangular member 68, and a rectangular frame-shaped focus ring 69 is placed on the stepped portion. The upper surface of the focus ring 69 is set lower than the upper surface of the electrostatic chuck 67 in a state where the focus ring 69 is provided at the step portion. The focus ring 69 is made of ceramic such as alumina or quartz. When the substrate G is placed on the placement surface of the electrostatic chuck 67, the inner end of the upper end surface of the focus ring 69 is covered with the outer peripheral edge of the substrate G.
A through hole 63a is opened in the 2 nd plate 63, and the power feeding member 70 is connected to the lower surface of the inner temperature control region 61a through the through hole 63 a. A power feed line 71 is connected to the lower end of the power feed member 70, and the power feed line 71 is connected to a high-frequency power supply 73 as a bias power supply via a matching box 72 for impedance matching. That is, the inner temperature control region 61a constituting the 1 st plate 61 is electrically connected to the high-frequency power source 73. By applying a high-frequency power of, for example, 13.56MHz from the high-frequency power supply 73 to the substrate mounting table 60, ions generated by the high-frequency power supply 19 as a source for generating plasma can be attracted to the substrate G, and ion energy can be given to the ions. Since the ion energy dependency of the etching rate varies depending on the material constituting the film to be etched, the etching rate and the etching selectivity can be improved in the plasma etching process. The feeding member 70 may be connected to the lower surface of the 2 nd plate 63 to apply the high-frequency power to the 1 st plate 61 through the 2 nd plate 63.
In this way, the 1 st plate 61 to which power is supplied from the high-frequency power supply 73 and temperature adjustment control is performed can also be referred to as a temperature adjustment plate. Hereinafter, the term "temperature adjustment plate" refers to the 1 st plate 61 which is made of a metal having a high thermal conductivity such as aluminum and on which temperature adjustment control is performed.
As shown in fig. 1, the high-frequency power source 73 is connected only to the inner temperature control region 61a, and the 2 nd plate 63 formed of, for example, stainless steel is connected to the lower surface of the inner temperature control region 61a and the lower surface of the outer temperature control region 61 b. The 2 nd plate 63 is a member that fixes the 1 st plate 61 as a temperature adjustment plate to a rectangular member 68 constituting the chamber 13. When the power feed line 71 is connected to the 2 nd plate 63, the power feed line 71 supplies the high-frequency power from the high-frequency power supply 73 to the temperature adjustment plate via the 2 nd plate 63 having conductivity. The 2 nd plate 63 is a member having a diffusion channel (not shown) for diffusing a heat transfer gas such as He gas over the entire surface of the electrostatic chuck 67. In this way, the 2 nd plate 63 is a structural member constituting the substrate mounting table 60, and also a member requiring electric conduction performance according to circumstances. Hereinafter, the 2 nd plate 63 may be referred to as a "heat transfer adjustment plate".
The substrate mounting table 60 is a mounting table that individually controls the temperature of the center area and the edge area of the substrate mounting table 60 by allowing temperature control media having different temperatures to flow through the inner temperature control area 61a and the outer temperature control area 61b, for example. Therefore, the gap 66 is provided between the inner temperature control region 61a and the outer temperature control region 61b, and heat transfer between both regions is difficult. For example, the inner temperature control region 61a can be controlled to be relatively high temperature with respect to the outer temperature control region 61 b. When the 1 st plate 61 is made of aluminum having a high thermal conductivity, the 1 st plate 61 has the gap 66, and thus, for example, the entire inner temperature control region 61a can be brought into a uniform high temperature state, and the entire outer temperature control region 61b can be brought into a uniform low temperature state. The inner temperature control region 61a and the outer temperature control region 61b are continuous via the connecting portions above and below the gap 66, respectively, but the thickness of the connecting portions is thinner than the thickness of the 1 st plate 61 except for the gap 66. Therefore, the heat transfer between the inner temperature control region 61a and the outer temperature control region 61b can be suppressed as much as possible. Therefore, since the connection portion may be made of aluminum as in the case of the material other than the connection portion, the gap 66 may be formed as a hollow in the 1 st plate 61.
If the thermal conductivity of the 2 nd plate 63 connected to the inner temperature adjustment region 61a and the outer temperature adjustment region 61b is high, the temperature adjustment states of the inner temperature adjustment region 61a and the outer temperature adjustment region 61b, which are adjusted to different temperatures, may be inhibited. Specifically, for example, the heat conduction from the relatively high temperature inner temperature control region 61a to the relatively low temperature outer temperature control region 61b is promoted, and the temperatures of both regions may be brought close to each other. Then, the 2 nd plate 63 having a thermal conductivity lower than that of the 1 st plate 61 is disposed on the substrate mounting table 60. Further, since the heat transfer action from the inner temperature control region 61a to the outer temperature control region 61b is reduced as the thermal conductivity of the 2 nd plate 63 is reduced, the 2 nd plate 63 is preferably formed of austenitic stainless steel having the lowest thermal conductivity among stainless steels.
The thickness of the 1 st plate 61 can be set in a range of, for example, 25mm to 50 mm. The inner temperature control region 61a and the outer temperature control region 61b constituting the 1 st plate 61 have temperature control medium flow paths 62a and 62b therein, respectively, and therefore need to have a certain thickness. On the other hand, the 1 st plate 61 is preferably as thin as possible from the viewpoint that a temperature difference between the inner temperature control region 61a and the outer temperature control region 61b can be easily generated. More specifically, by providing the temperature control medium flow paths 62a and 62b in the 1 st plate 61 so that the thickness of the upper and lower portions of the gap 66 between the temperature control medium flow paths 62a and 62b of the 1 st plate 61 is as small as possible, the temperature difference between the inner temperature control region 61a and the outer temperature control region 61b can be easily generated.
On the other hand, the thickness of the 2 nd plate 63 can be set in the range of, for example, 20mm to 45 mm. For the 2 nd plate 63, it is desirable to make its thickness thin in order to reduce the heat transfer effect. However, since the 2 nd plate 63 has a planar size of about the same size as the FPD substrate G, if the thickness of the 2 nd plate 63 is thinner than 20mm, there is a possibility that a problem in strength due to insufficient rigidity, such as deformation due to flexure, occurs, and therefore, it is preferable to set the thickness of the 2 nd plate 63 to 20mm or more. On the other hand, the thickness of the 2 nd plate 63 may be set to 45mm or less from the viewpoint of the high-versatility stainless steel as the material of the substrate mounting table being about 45mm (material cost) and the heat transfer function.
The control unit 90 controls the respective components of the substrate processing apparatus 100, for example, the operation of the coolers 81 and 84, the high- frequency power supplies 19 and 73, the process gas supply unit 40, the gas exhaust unit 50 based on the monitoring information transmitted from the pressure gauge, and the like constituting the temperature control sources 80A and 80B. The control Unit 90 includes a CPU (Central Processing Unit), a ROM (Read only Memory), and a RAM (Random Access Memory). The CPU executes predetermined processing in accordance with a process (machining process) stored in a storage area such as a RAM. Control information of the substrate processing apparatus 100 for the processing conditions is set in the process. The control information includes, for example, a gas flow rate, a pressure in the processing container 10, a temperature in the processing container 10, temperatures of the inner temperature control region 61a and the outer temperature control region 61b constituting the 1 st plate 61, a processing time, and the like. For example, the process includes a process of controlling the temperature of the inner temperature control region 61a and the temperature of the outer temperature control region 61b to respective temperatures suitable for the plasma etching process and the like. Here, the "temperature proper to the plasma etching process and the like" means a temperature proper to each region where the process is performed such that the etching rate of the insulating film, the electrode film, and the like is uniform over the entire wide substrate G for the FPD and the in-plane uniformity is high.
The program applied by the process and control section 90 may be stored in, for example, a hard disk, an optical disk, a magneto-optical disk, or the like. The manufacturing process and the like may be mounted on the control unit 90 in a state of being stored in a storage medium readable by a portable computer such as a CD-ROM, a DVD, or a memory card, and may be read out by the control unit 90. The control unit 90 includes, in addition to the above, a user interface such as a keyboard, an input device such as a mouse, etc., for performing input operations of commands, a display device such as a display for visually displaying the operating state of the substrate processing apparatus 100, and an output device such as a printer.
According to the substrate processing method using the substrate processing apparatus 100, the process with high in-plane uniformity can be realized on the wide substrate G for the FPD by performing the unique temperature control for each region. As described in detail below, since the substrate G is placed on the temperature adjustment plate (the 1 st plate 61) having a high thermal conductivity for temperature adjustment control, the plasma processing can be performed with good thermal responsiveness (or temperature responsiveness). Therefore, the temperature of the temperature adjustment plate can be stabilized at a stage where the number of the substrates G to be processed (in other words, the number of times of performing on-off of plasma) is small.
(modification of the 1 st plate)
Next, a modification of the 1 st plate having a plurality of temperature control regions will be described with reference to fig. 3A to 3E. Fig. 3A to 3E are plan views simulating modifications of the 1 st plate.
A metal plate having a rectangular shape in a plan view of the 1 st plate 61A shown in fig. 3A is divided into three regions from the center toward the outer circumferential side by two rectangular frame-shaped gaps 66, and the 1 st plate 61A has an inner region 61c, an intermediate region 61d, and an outer region 61 e. The inner zone 61c, the intermediate zone 61d, and the outer zone 61e each have a specific temperature control medium flow path and a specific temperature control unit such as a heater, and each temperature control unit has a specific temperature control source (none of them are shown). For example, the temperature control of the three regions is performed such that the temperature decreases in the order of the inner region 61c, the middle region 61d, and the outer region 61 e.
On the other hand, four corners of the metal plate having a rectangular shape in a plan view of the 1 st plate 61B shown in fig. 3B are divided into five regions by L-shaped or inverted L-shaped gaps 66, and the 1 st plate 61B has a central region 61f and four corner regions 61 g. For example, the temperature control is performed in two regions so that the central region 61f becomes relatively high in temperature with respect to the corner regions 61 g.
On the other hand, the center position of the four end edges of the 1 st plate 61C shown in fig. 3C, which is a rectangular metal plate in a plan view, is divided into five regions by U-shaped or inverted U-shaped gaps 66, and the 1 st plate 61C has a center region 61h and four end edge center regions 61 j. For example, the temperature control is performed in two regions so that the center region 61h becomes relatively high temperature with respect to the edge center region 61 j.
On the other hand, the 1 st plate 61D shown in fig. 3D is a metal plate having a rectangular shape in a plan view and divided into nine regions by the lattice-like gaps 66, and the 1 st plate 61D has a central region 61k, corner regions 61m, and side central regions 61 n. The central region 61k, the corner regions 61m, and the side central regions 61n each have a specific temperature control unit such as a temperature control medium flow path and a heater, and each temperature control unit has a specific temperature control source (not shown). For example, the temperature control of the three regions is performed such that the temperature decreases in the order of the central region 61k, the corner regions 61m, and the side central regions 61 n. The side center region 61n may perform different temperature control for the long side center region and the short side center region.
Further, the metal plate having a rectangular shape in a plan view of the 1 st plate 61E shown in fig. 3E is roughly divided into three regions by two rectangular frame-shaped gaps 66 from the center toward the outer peripheral side. Specifically, the present invention has an inner region 61p and an intermediate region 61q, and the outer region is a region defined by corner regions 61r located at four corners and four end edge central regions 61s and 61t with gaps 66. In addition, the edge center region of two long sides out of the four end sides may be set to 61s, and the edge center region of two short sides may be set to 61 t. The inner region 61p, the middle region 61q, the corner region 61r, and the edge center regions 61s and 61t each have a specific temperature control unit such as a temperature control medium flow path and a heater, and each temperature control unit has a specific temperature control source (none of them are shown).
The temperature control of each area of the 1 st plate 61E also has a plurality of modes. The 1 st temperature control mode of the 1 st plate 61E performs temperature control of four regions such that the temperature decreases in the order of the inner region 61p, the middle region 61q, the corner region 61r, and the edge center regions 61s and 61t, for example. Here, the edge side central regions 61s and 61t are controlled to have the same temperature.
On the other hand, the 2 nd temperature control mode of the 1 st plate 61E performs temperature control of five regions such that the temperature decreases in the order of the inner region 61p, the middle region 61q, the corner region 61r, the edge center region 61s, and the edge center region 61t, for example. Here, the edge side central regions 61s, 61t are controlled to different temperatures.
In the 1 st plate according to any of the modifications, the process with high in-plane uniformity can be realized on the wide substrate G for the FPD by performing the unique temperature control for each region.
[ temperature analysis ]
Next, the results of the temperature analysis are explained with reference to fig. 4A to 4C and table 1. In the present temperature analysis, four kinds of analysis models were created by changing the metal types of the temperature adjustment plate having the temperature adjustment medium flow path and the heat transfer adjustment plate connected to the temperature adjustment plate and by reversing the vertical positions of the temperature adjustment plate and the heat transfer adjustment plate, and temperature analysis was performed on each analysis model. With this temperature analysis, the temperatures of a plurality of portions of the temperature adjustment plate were specified, and the temperature difference between the highest temperature and the lowest temperature was verified. Here, fig. 4A and 4B are both side views of an example of a substrate mounting table model used for temperature analysis, and fig. 4C is a view along direction C-C of fig. 4A and 4B, and is a cross-sectional view of a temperature adjustment plate model, or a view showing an analysis temperature designation portion.
(analysis summary)
The present invention creates the following four analytical models in a computer. The following analytical models 1 to 3 are comparative examples 1 to 3, respectively, and analytical model 4 is an example. For convenience, the one having the temperature control medium flow path is referred to as a temperature control plate model, and the one having no temperature control medium flow path is referred to as a heat transfer control plate model, regardless of whether the temperature control plate model is disposed above or below.
< analytical model 1 >
The analysis model 1 is the analysis model M1 shown in fig. 4A, and has a temperature adjustment plate model Mb on the lower side and a heat transfer adjustment plate model Ma on the upper side. The temperature adjustment plate model Mb was made of A5052 and had a thickness of 45mm, and the heat transfer adjustment plate model Ma was made of SUS304 and had a thickness of 25 mm. As shown in fig. 4C, the temperature adjustment plate pattern Mb has an inner temperature adjustment area Mb1 and an outer temperature adjustment area Mb2 with a rectangular frame-shaped gap G therebetween. The inner temperature control area Mb1 has a temperature control medium flow path pattern Mb11, and the outer temperature control area Mb2 has a temperature control medium flow path pattern Mb 21.
< analytical model 2 >
The basic structure of the analysis model 2 is the same as that of the analysis model 1, but the temperature adjustment plate model Mb and the heat transfer adjustment plate model Ma of the analysis model 2 are each made of a5052 as a raw material.
< analytical model 3 >
The analysis model 3 is the analysis model M2 shown in fig. 4B, and has a temperature adjustment plate model Mc on the upper side and a heat transfer adjustment plate model Md on the lower side. The temperature adjustment plate model Mc was made of a5052 and had a thickness of 25mm, and the heat transfer adjustment plate model Md was made of a5052 and had a thickness of 25 mm. As shown in fig. 4C, the temperature adjustment plate model Mc has an inner temperature adjustment region Mc1 and an outer temperature adjustment region Mc2 with a rectangular frame-shaped gap G therebetween. The inner temperature control region Mc1 has a temperature control medium flow path model Mc11, and the outer temperature control region Mc2 has a temperature control medium flow path model Mc 21.
< analytical model 4 >
The basic structure of the analysis model 4 is the same as that of the analysis model 3, but the temperature adjustment plate model Mc of the analysis model 4 is made of a5052, and the heat transfer adjustment plate model Md is made of SUS 304.
In the present temperature analysis, the temperature control medium at 50 ℃ is caused to flow through the temperature control medium flow path models Mb11 and Mc11, and the temperature control medium at 0 ℃ is caused to flow through the temperature control medium flow path models Mb21 and Mc 21.
(analysis results)
The plurality of analysis temperature designation sites in fig. 4C are represented by points O to C. Here, point O is the center point of the analytical models M1 and M2, point a is the center position of the short side, point C is the corner position, and point B is the position corresponding to the gap G on the straight line connecting point O and point C. In each analysis model, the point O represents the highest temperature and the point C represents the lowest temperature, and the difference between the highest temperature and the lowest temperature is obtained. The results are shown in table 1 below.
TABLE 1
Figure BDA0002257778520000161
As can be seen from table 1, the preferred zone temperature control mode is obtained in both comparative example 1 and the example in which the difference between the maximum temperature and the minimum temperature is the largest.
Then, next, verification about thermal responsiveness is performed as follows.
[ one investigation concerning thermal responsiveness ]
One consideration of the thermal responsiveness will be described with reference to fig. 5A and 5B. Here, fig. 5A is a graph showing a correlation between the number of discharges and the electrode temperature in the example and comparative example 1 of the temperature analysis, and fig. 5B is an enlarged view of a portion B of fig. 5A.
The thermal responsiveness (or temperature responsiveness) is excellent in thermal responsiveness in which the temperature stability of the electrode plate is maintained during the process of repeating the plasma treatment after the temperature of the electrode plate is adjusted, and the time (or the number of discharges) until the temperature is stabilized is short (small).
The temperature of the temperature adjustment plate gradually rises according to the increase in the number of processed substrates, in other words, the number of repetitions of on-off of plasma (the number of discharges). Since the temperature adjustment plate of the embodiment is made of aluminum having high thermal conductivity, the plasma processing can be performed with good thermal responsiveness. Therefore, as shown in fig. 5A, the temperature of the temperature adjustment plate can be stabilized at a stage where the number of discharges is small, and processing that does not depend on the number of substrates G to be processed can be realized.
On the other hand, since the heat transfer adjustment plate of comparative example 1 is made of stainless steel having low thermal conductivity, the in-plane temperature difference is high as shown in table 1, but the thermal response is inferior to that of the examples, and therefore the time until the temperature of the heat transfer adjustment plate is stabilized is longer than that of the examples. As shown in fig. 5B, the plasma is turned on at the position X1 and turned off at the position X2, and the temperature is gradually stabilized by repeating such discharge, but the number of discharges until the temperature is stabilized in the example can be smaller than that in the comparative example 1.
In this way, considering both the results of the temperature analysis described above and the consideration relating to the thermal responsiveness, it can be concluded that the structures of the temperature adjustment plate and the heat transfer adjustment plate of the embodiment are preferable.
[ experiment relating to temperature dependence of etching Rate and temperature dependence of selection ratio ]
Next, experiments relating to the temperature dependence of the plurality of insulating films on the etching rate and the temperature dependence of the selection ratio will be described with reference to fig. 6 to 10. Here, fig. 6 is a view simulating a plan view of a substrate mounting table applied to an experiment.
(Experimental summary)
In this experiment, the temperature of the mounting table was changed to evaluate the workability of each region. In the experiment, a central area CA including the center point O is a rectangular area in a plan view in the center corresponding to the inner temperature control area, and an edge area EA including the edge E is an area in a rectangular frame shape in a plan view outside corresponding to the outer temperature control area. An intermediate line between the central region CA and the edge region EA is defined as an intermediate region MA.
In this experiment, the substrate processing apparatus housing the substrate mounting table was an inductively coupled plasma processing apparatus, and the pressure in the chamber was set to 5mTorr to 15mTorr (0.665Pa to 1.995Pa), and the ICP source power and the bias power were both set to 5kW to 15 kW. Furthermore, plasma is performed by using a mixed gas of an F-based gas and a diluent gas as an etching gasEtching process with F-based gas such as CHF3、CH2F2、CH3F、CF4、C4F8、C5F8Etc., and the diluent gas is, for example, a gas selected from He, Ar, Xe, etc.
In this experiment, the temperature dependence of the etching rate of the insulating film and the etching rate of the electrode film were examined for a test piece in which an SiN film was formed on the substrate, a test piece in which an SiO film was formed on the substrate, and a test piece in which an Si film for a gate electrode (Poly-Si film) was formed on the substrate. In addition, the temperature dependence of the SiO/Si selectivity ratio (selectivity of SiO film) was also verified for a multilayer film in which an Si film and an SiO film were formed on a substrate.
(results of experiments)
Fig. 7 is a graph showing experimental results relating to the temperature dependence of the etching rate of the SiN film. Fig. 8 is a graph showing the experimental results relating to the temperature dependence of the etching rate of the SiO film. Fig. 9 is a graph showing the experimental results relating to the temperature dependence of the etching rate of the Si film. Fig. 10 is a graph showing the experimental results relating to the temperature dependence of the SiO/Si selectivity.
In each graph, the solid line graph is a graph relating to the temperature dependence of the etching rate in the edge region of the substrate mounting table shown in fig. 6 and the temperature dependence of the selectivity, and the dashed line graph is a graph relating to the temperature dependence of the etching rate in the central region shown in fig. 6 and the temperature dependence of the selectivity. In addition, the one-dot chain lines are graphs each related to the temperature dependence of the etching rate of the intermediate region and the temperature dependence of the selectivity shown in fig. 6.
From fig. 7, it was confirmed that the SiN film has temperature dependence. Regarding the etching rate of the edge region, it is understood that there is no large difference in etching rate between low temperature and high temperature. On the other hand, it is known that the etching rate in the central region is low at a low temperature, and the etching rate in the high temperature is high and is about the same as the etching rate in the edge region at a low temperature.
From the experimental results shown in fig. 7, it was confirmed that, with respect to the etching treatment of the SiN film, by performing control to adjust the temperature of the edge region of the substrate mounting table to a low temperature and the temperature of the central region to a high temperature, an etching rate as uniform as possible and high over the entire range of the substrate mounting table can be obtained.
Next, from fig. 8, it was confirmed that the SiO film had no temperature dependence. Therefore, it is found that temperature control is not necessarily required for each region when etching the SiO film.
Next, from fig. 9, it was confirmed that the Si film has temperature dependence. It is known that the etching rate in the edge region is slightly different between low temperature and high temperature, while the etching rate in the central region is slightly different between low temperature and high temperature.
From the experimental results shown in fig. 9, it was confirmed that, with respect to the etching treatment of the Si film, by performing control to adjust the temperature of the edge region of the substrate mounting table to a low temperature and the temperature of the central region to a high temperature, an etching rate as uniform as possible over the entire range of the substrate mounting table can be obtained. Further, as can be seen from a comparison of fig. 7, 8, and 9, the etching rate of the Si film is lower than the etching rate of the insulating film such as the SiN film or the SiO film. This point is related to the higher SiO/Si selectivity shown in FIG. 10.
From FIG. 10, it is confirmed that the SiO/Si selectivity has a temperature dependence. The selection ratio of the edge region is high at low temperatures and decreases sharply with increasing temperature, showing a tendency opposite to the edge side graphs shown in fig. 7 and 9. On the other hand, it is known that the selection ratio of the central region is high (higher than the edge graph) at low temperatures and gradually decreases with increasing temperature, but is approximately the same as the selection ratio of the edge graph at low temperatures.
From the experimental results shown in fig. 10, it was confirmed that, in the etching treatment of the SiO film formed on the Si film, by adjusting the temperature of the edge region of the substrate mounting table to a low temperature and the temperature of the central region to a high temperature, a SiO selectivity as uniform as possible and high over the entire range of the substrate mounting table can be obtained.
According to this experiment, in any of the SiN film etching process and the Si film etching process, the etching process can be performed as uniformly as possible over the entire substrate by controlling the temperature of the edge region of the substrate mounting table to be low and the temperature of the central region to be high. In particular, in the case of a SiN film, a high etching rate is obtained in addition to performing an etching process that is as uniform as possible over the entire area of the substrate. In the etching process of the SiO film formed on the Si film, the SiO/Si selectivity can be obtained as uniform as possible over the entire substrate and high by controlling the temperature of the edge region of the substrate mounting table to be low and the temperature of the central region to be high.
Further, since the temperature control temperatures suitable for the respective edge regions and the central region may differ depending on the types of insulating films such as SiN films and SiO films and conductive films such as Si films, it is preferable to perform temperature control for each region at an appropriate temperature control temperature depending on the type of insulating film and the type of conductive film.
The present disclosure is not limited to the configurations shown here, and other embodiments may be possible in which the configurations shown in the above embodiments are combined with other components. In this regard, changes can be made without departing from the spirit of the present disclosure, and the determination can be made as appropriate depending on the application form thereof.
For example, although the substrate processing apparatus 100 of the illustrated example has been described as an inductively coupled plasma processing apparatus including a dielectric window, the apparatus may be an inductively coupled plasma processing apparatus including a metal window instead of the dielectric window, or may be a plasma processing apparatus of another embodiment. Specifically, Electron Cyclotron resonance Plasma (ECP), Helicon Wave Plasma (HWP), and parallel plate Plasma (CCP) can be mentioned. Microwave-excited Surface Wave Plasma (SWP) can also be mentioned. These plasma processing apparatuses include ICP, and are each capable of independently controlling ion flux (japanese: イオンフラック)ス) and ion energy, the etching shape and selectivity can be freely controlled, and 10 can be obtained11cm-3To 1013cm-3Higher electron density on the left and right.
The substrate processing apparatus 100 has a high-frequency electrode formed of the high-frequency power supply 19 connected to the high-frequency antenna 15 on the surface opposite to the substrate G, and a high-frequency electrode formed of the high-frequency power supply 73 connected to the 1 st plate 61 on the substrate mounting table 60.
Each temperature control region of the 1 st plate 61 constituting the substrate processing apparatus 100 is provided with a heater as a temperature control portion, and when a film formation process is performed by a thermal CVD method, it is not necessarily required to generate plasma.
Further, the present invention can also be applied to a substrate mounting table that does not include the electrostatic chuck 67 on the upper surface of the 1 st plate 61 and the focus ring 69 on the upper surface of the rectangular member 68.

Claims (15)

1. A substrate mounting table on which a substrate is mounted and temperature-controlled when the substrate is processed in a processing chamber,
the substrate mounting table includes:
a metal 1 st plate divided into a plurality of temperature control regions by gaps; and
a metal 2 nd plate which is in contact with the 1 st plate and has a thermal conductivity lower than that of the 1 st plate,
each temperature control region is provided with a temperature control part for performing the inherent temperature control,
the 1 st plate having an upper surface for mounting the substrate is mounted on an upper surface of the 2 nd plate.
2. The substrate stage according to claim 1,
the 1 st plate is formed of aluminum or an aluminum alloy,
the 2 nd plate is formed of stainless steel.
3. The substrate stage according to claim 2,
the 2 nd plate is formed of austenitic stainless steel.
4. The substrate mounting table according to any one of claims 1 to 3,
the plurality of temperature adjustment areas are continuous above and below the gap.
5. The substrate mounting table according to any one of claims 1 to 4,
and a power supply is electrically connected to any one of the temperature adjusting areas.
6. The substrate mounting table according to any one of claims 1 to 5,
the temperature control unit includes at least one of a heater and a temperature control medium flow path through which a temperature control medium flows.
7. A substrate processing apparatus includes: a processing container, a substrate mounting table for mounting a substrate in the processing container and adjusting the temperature of the substrate, and a temperature adjusting source for the substrate mounting table,
the substrate mounting table includes:
a metal 1 st plate divided into a plurality of temperature control regions by gaps; and
a metal 2 nd plate which is in contact with the 1 st plate and has a thermal conductivity lower than that of the 1 st plate,
each temperature control region is provided with a temperature control part for performing the inherent temperature control,
the 1 st plate having an upper surface for mounting the substrate is mounted on an upper surface of the 2 nd plate.
8. The substrate processing apparatus according to claim 7,
the 1 st plate is formed of aluminum or an aluminum alloy,
the 2 nd plate is formed of stainless steel.
9. The substrate processing apparatus according to claim 8,
the 2 nd plate is formed of austenitic stainless steel.
10. The substrate processing apparatus according to any one of claims 7 to 9,
the plurality of temperature adjustment areas are continuous above and below the gap.
11. The substrate processing apparatus according to any one of claims 7 to 10,
and a power supply is electrically connected to any one of the temperature adjusting areas.
12. The substrate processing apparatus according to any one of claims 7 to 11,
the temperature control unit has at least one of a heater and a temperature control medium flow path through which a temperature control medium flows,
the temperature adjusting source corresponding to the heater is a heater power supply, and the temperature adjusting source corresponding to the temperature adjusting medium flow path is a cooler.
13. The substrate processing apparatus according to any one of claims 7 to 12,
the substrate processing apparatus further includes a control unit,
the control unit performs a process of controlling the temperature of the temperature control unit included in each of the temperature control regions to a specific temperature for the temperature control source.
14. The substrate processing apparatus of claim 13,
the substrate stage has a rectangular shape in plan view,
the temperature control region has an outer temperature control region having a rectangular frame shape and an inner temperature control region arranged inside the outer temperature control region with the gap therebetween and having a rectangular shape in plan view,
temperature control medium flow paths are provided in both the outer temperature control region and the inner temperature control region,
the control unit performs control of the temperature control source to cause a temperature control medium having a relatively higher temperature than a temperature control medium flowing through the temperature control medium flow path in the outer temperature control region to flow through the temperature control medium flow path in the inner temperature control region.
15. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising: a processing container, a substrate mounting table for mounting a substrate in the processing container and adjusting the temperature of the substrate, and a temperature adjusting source for the substrate mounting table,
the substrate mounting table includes:
a metal 1 st plate divided into a plurality of temperature adjusting regions by gaps, and
a metal 2 nd plate which is in contact with the 1 st plate and has a thermal conductivity lower than that of the 1 st plate,
each temperature control region is provided with a temperature control part for performing the inherent temperature control,
the 1 st plate having an upper surface for mounting the substrate is mounted on an upper surface of the 2 nd plate,
and performing substrate processing while performing a unique temperature control in each of the temperature control regions.
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