CN111141448B - On-chip plane type miniature ionization vacuum sensor and manufacturing method - Google Patents
On-chip plane type miniature ionization vacuum sensor and manufacturing method Download PDFInfo
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- CN111141448B CN111141448B CN202010019531.0A CN202010019531A CN111141448B CN 111141448 B CN111141448 B CN 111141448B CN 202010019531 A CN202010019531 A CN 202010019531A CN 111141448 B CN111141448 B CN 111141448B
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- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
- G01L21/30—Vacuum gauges by making use of ionisation effects
Abstract
The application discloses an on-chip planar miniature ionization vacuum sensor and a manufacturing method, comprising: an electron source and a plurality of ring electrodes on the same substrate; the electron source is used for emitting electrons; and the annular electrodes surround the electron source and are used for applying positive bias to the electrons, collecting the electrons and determining electron current or applying negative bias to the ions, collecting the ions and determining ion current according to input voltage. The use of an electron source and a plurality of ring electrodes on the same substrate can reduce the volume and mass of the ionization vacuum sensor; the use of the on-chip electron source can reduce energy consumption and heat generation, thereby reducing outgassing; by selecting two from a plurality of ring electrodes surrounding the electron source, a range can be selected; due to the fact that the micro-nano machining mode can be adopted for large-batch preparation, production efficiency can be improved, and production cost can be reduced.
Description
Technical Field
The application relates to the technical field of ionization vacuum sensors, in particular to an on-chip planar miniature ionization vacuum sensor and a manufacturing method thereof.
Background
Currently, vacuum degree measuring devices are mainly classified into compression type vacuum sensors, thin film vacuum sensors, thermocouple vacuum sensors, resistance vacuum sensors, ionization vacuum sensors, and the like, and these vacuum sensors have a specific measuring range.
The ionization vacuum sensor is a vacuum sensor widely used at present, and the basic principle of the ionization vacuum sensor is that electrons with certain energy ionize gas molecules in vacuum into ions, the ions are collected by an ion collector, and an ion current Ii is detected. Meanwhile, the electron current Ie is collected and detected by the electron collector. Over a certain pressure range, the ratio of the ion current Ii and the electron current Ie is proportional to the pressure, I = Ii/Ie = KP, where K is the sensitivity. Therefore, the values of the ion current and the electron current are detected in the measuring vacuum range of the ionization vacuum sensor, and the value of the pressure intensity can be obtained.
The ionization vacuum sensor widely used in the market at present is basically manufactured by machining and uses a hot filament as an electron emission source. The ionization vacuum sensor has the problems of large volume, large mass, high energy consumption, heat generation of the filament, serious deflation and the like, particularly, the further reduction of the distance between a hot filament electron source and an electron accelerating electrode is limited by the heating expansion of the hot filament, and the filament is easy to oxidize and lose efficacy under high pressure, so that the two factors limit the measurement range of the conventional ionization vacuum sensor. On the other hand, the currently used ionization vacuum sensor has a narrow measuring range, and different vacuum sensors are required to be used for measuring different vacuum degrees, which greatly limits the application of the ionization vacuum sensor. Therefore, the ionization vacuum sensor with wide measuring range and high upper measuring limit is an extremely important vacuum sensor with great application market potential.
Therefore, there is a need to provide an on-chip planar miniature ionization vacuum sensor and method of manufacture that is small, low mass, low power consumption, low heat generation, low outgassing, and selectable span range.
Disclosure of Invention
To solve the above problems, the present application proposes an on-chip planar type micro ionization vacuum sensor and a manufacturing method.
In one aspect, the present application provides an on-chip planar miniature ionization vacuum sensor, comprising: an electron source and a plurality of ring electrodes on the same substrate;
the electron source is used for emitting electrons;
and the annular electrodes surround the electron source and are used for applying positive bias to the electrons, collecting the electrons and determining electron current or applying negative bias to the ions, collecting the ions and determining ion current according to input voltage.
Preferably, the circuit board and the extraction electrode are provided with a welding disc and a pin;
the bonding pad is connected with the extraction electrode and the annular electrode and is used for transmitting the input of an external circuit to the extraction electrode and the annular electrode and transmitting the electronic current and the ionic current collected by the annular electrode to the pin;
the pin is used for connecting an external circuit, transmitting the input of the external circuit to the extraction electrode and the annular electrode through the bonding pad, or transmitting the received electronic current and the received ionic current to the external circuit;
the extraction electrode is connected with the electron source and is used for transmitting the input of an external circuit to the electron source.
Preferably, the circuit board further comprises a spacing layer for packaging and a perforated packaging plate.
Preferably, the electron source is an on-chip micro electron source comprising: single electron sources or multiple arrays of electron sources.
Preferably, the on-chip microelectronic source comprises: the device comprises an on-chip micro thermal emission electron source, an on-chip micro tunneling field emission electron source, a Spindt on-chip electron source, a silicon needle point field emission array on-chip electron source, an MIM multi-layer tunneling electron source, an on-chip micro thermal emission electron source and a surface tunneling electron source based on a resistance change material.
Preferably, the filament material of the on-chip micro thermal emission electron source comprises: graphene and/or carbon nanotubes.
In a second aspect, the present application provides a method for manufacturing an on-chip planar micro ionization vacuum sensor, which is used for manufacturing the on-chip planar micro ionization vacuum sensor, and comprises:
preparing an electron source on a substrate and preparing an annular electrode by adopting a micro-nano processing or electroplating method.
Preferably, the material of the ring electrode comprises: metal and/or semiconductor.
Preferably, after the preparing the electron source on the substrate, the method further comprises: preparing an extraction electrode; and when the annular electrode is made of a non-metal material, processing a metal layer on the annular electrode.
Preferably, after the metal layer is processed on the ring electrode, the method further includes:
preparing a circuit board, and attaching the on-chip planar miniature ionization vacuum sensor in the circuit board;
the leading-out electrode and the annular electrode or the metal layer on the annular electrode are connected with the welding pad on the circuit board through welding wires;
the circuit board is encapsulated using spacer layers and perforated spacers.
The application has the advantages that: the use of an electron source and a plurality of ring electrodes on the same substrate can reduce the volume and mass of the ionization vacuum sensor; the use of the on-chip electron source can reduce energy consumption and heat generation, thereby reducing outgassing; by selecting two from a plurality of ring electrodes surrounding the electron source, a range of measurement can be selected.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to denote like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of a planar miniature ionization vacuum sensor on a chip provided herein;
FIG. 2 is a schematic structural diagram of a planar miniature ionization vacuum sensor on a chip provided by the present application;
FIG. 3 is a schematic diagram of a circuit board structure of a planar miniature ionization vacuum sensor on a chip provided by the present application;
FIG. 4 is a schematic diagram of an on-chip planar miniature ionization vacuum sensor provided by the present application in connection with a circuit board;
FIG. 5 is a schematic diagram of a package portion of a planar miniature ionization vacuum sensor on a chip provided herein;
FIG. 6 is a schematic diagram illustrating the operation principle of a planar micro ionization vacuum sensor on a chip provided by the present application;
FIG. 7 is a schematic diagram of a step of manufacturing a metal ring electrode of a method for manufacturing a planar micro ionization vacuum sensor on a chip;
FIG. 8 is a schematic top view of a micro-nano machined micro-nano fabricated microscope on a silicon wafer according to the method for fabricating a planar micro ionization vacuum sensor on a chip provided by the present application;
FIG. 9 is a schematic diagram of a step of graphene as a material of a ring electrode in the manufacturing method of the planar micro ionization vacuum sensor on a chip provided by the present application;
FIG. 10 is a schematic diagram of a step of fabricating a ring electrode of a method for fabricating a planar micro-ionization vacuum sensor on a chip using carbon nanotubes;
FIG. 11 is a schematic diagram of the step of forming the ring electrode of another method for fabricating an on-chip planar miniature ionization vacuum sensor provided by the present application as a carbon nanotube;
FIG. 12 is a bonding diagram of another method of fabricating an on-chip planar miniature ionization vacuum sensor as provided herein;
reference numerals
1 substrate 2 extraction electrode
3 extraction electrode 4 Electron Source
5 ring electrode 6 ring electrode
7 ring electrode 8 ring electrode
20 circuit board 21 recess on circuit board
22 pad 23 pin
30 welding wire 31 welding spot
40 electron acceleration region 41 ion acceleration region
42 electron collector 43 ion collector
44 gas molecules 45 ions
50 glass 51 spacer layer
52 substrate 53 pins
54-punch 60 on-chip miniature electron source to be processed
61 electron collector to be processed 62 ion collector to be processed
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In a first aspect, according to an embodiment of the present application, there is provided a planar miniature ionization vacuum sensor on a chip, as shown in fig. 1, including: an electron source and a plurality of ring electrodes on the same substrate;
an electron source for emitting electrons;
a plurality of ring electrodes surround the electron source and are used for applying positive bias to electrons, collecting electrons and determining electron current or applying negative bias to ions, collecting ions and determining ion current according to input voltage.
As shown in fig. 2 and 3, the circuit board further comprises a bonding pad and a pin, and an extraction electrode;
the bonding pad is connected with the extraction electrode and the annular electrode and is used for transmitting the input of an external circuit to the extraction electrode and the annular electrode and transmitting the electronic current and the ionic current collected by the annular electrode to the pin;
the pin is used for connecting an external circuit, transmitting the input of the external circuit to the extraction electrode and the annular electrode through the bonding pad, or transmitting the received electronic current and the received ionic current to the external circuit;
the extraction electrode is connected to the electron source for transmitting an input of an external circuit to the electron source.
As shown in fig. 4, the circuit board preferably further includes a recess for placing (mounting) a substrate having an electron source, an extraction electrode, and a plurality of ring electrodes.
As shown in fig. 5, the circuit board further comprises a spacing layer for packaging and a perforated packaging plate.
The electron source is an on-chip micro electron source, comprising: single electron sources or multiple arrays of electron sources.
On-chip miniature electron sources, of unlimited type, including: the electron source comprises an on-chip micro thermal emission electron source or an on-chip micro tunneling field emission electron source, a Spindt on-chip electron source, a silicon needle point field emission array on-chip electron source, an MIM multi-layer tunneling electron source, an on-chip micro thermal emission electron source, a surface tunneling electron source based on a resistance change material and the like.
The filament material of the on-chip micro thermal emission electron source comprises: graphene and/or carbon nanotubes. If a non-single electron source is used, the filament materials of the electron sources on the same substrate may be unified into graphene or carbon nanotubes, or filaments of different materials may be used for the electron sources. Assuming that two electron sources are included on the same substrate, one may use a filament of graphene material and the other may use a filament of carbon nanotube material.
The on-chip micro electron source is prepared by adopting a micro-nano processing mode.
The perforations in the package plate are used for gas exchange.
In practical application, the embodiment of the application can be applied only by connecting the selection pin with an external circuit.
The materials of the ring electrode include: metals, graphene, carbon nanotubes, and the like.
The substrate includes: glass, silicon wafers, sapphire, diamond, silicon carbide (SiC), and the like.
The processing material of the circuit board comprises: glass, silicon nitride, and the like.
One pad is connected to one extraction electrode or one ring electrode.
The lead electrode and the ring electrode are welded to the pad by a welding wire formed using a pressure welding method.
Pressure welding is a welding method in which a certain pressure is applied to a combined weldment in a heated or unheated state to cause plastic deformation or melting of the combined weldment, and atoms on two separated surfaces are connected by forming a metallic bond through recrystallization, diffusion and the like.
The on-chip miniature electron source is positioned in the central area of the substrate, and the annular electrodes surround the outer ring of the miniature electron source and are respectively used as an ion collector and an electron collector. The annular electrode surrounding the on-chip micro electron source can be two circles or multiple circles, and two circles of the annular electrodes can be flexibly selected as ion collecting electrodes and electron collecting electrodes according to requirements. The ion collector is outside the electron collector.
The annular electrode is processed on the substrate by micro-nano processing or electroplating and other methods.
The shape of the ring electrode includes: polygonal, arc, etc., without any limitation, and the width and thickness thereof may be changed according to the requirements of the sensitivity of detection and the range of detection.
By selecting different ring electrodes, the measuring range and the measuring sensitivity of the on-chip plane type miniature ionization vacuum sensor can be changed.
The on-chip planar miniature ionization vacuum sensor comprises a circuit board and can be packaged into an independent working unit.
Next, the operation principle of the embodiment of the present application will be further explained, as shown in fig. 6.
Two of the ring electrodes were selected as the electron collector and the ion collector. Wherein the annular electrode of the inner ring is applied with positive bias voltage, and the voltage value is about 50-150V. The annular electrode of the outer ring applies negative bias voltage with the voltage value of between 50V and 150V. After the electrons are emitted from the on-chip miniature electron source, the electrons are accelerated and collected by the field intensity applied by the annular electrode of the inner ring, and the electron current Ie is detected. The electrons ionize gas molecules in the process of accelerating in the electron acceleration interval to generate ions, and the ions are collected by the annular electrode on the outer ring and detect ion current Ii. The ratio of the ion current Ii to the electron current Ie is proportional to the pressure over a range of pressures, i.e., I = Ii/Ie = KP. Thus, the pressure value can be obtained from the ratio by detecting only the electron current Ie collected by the ring electrode as the electron collector and the ion current Ii detected by the ring electrode as the ion collector.
In a second aspect, according to an embodiment of the present application, there is further provided a method for manufacturing an on-chip planar micro ionization vacuum sensor, the method including:
preparing an electron source on a substrate and preparing an annular electrode by adopting a micro-nano processing or electroplating method.
The materials of the ring electrode include: metal and/or semiconductor.
The plurality of ring electrodes are insulated from each other.
After preparing the electron source on the substrate, the method further comprises the following steps: preparing an extraction electrode; and when the annular electrode is made of non-metal materials, processing a metal layer on the annular electrode.
And preparing the extraction electrode, namely preparing the annular electrode and then packaging.
After the metal layer is processed on the ring electrode, the method further comprises the following steps:
preparing a circuit board, and attaching the on-chip planar miniature ionization vacuum sensor in the circuit board;
and the leading-out electrode and the annular electrode or the metal layer (metal pad) on the annular electrode are connected with the welding pad on the circuit board through welding wires;
the circuit board is encapsulated using spacer layers and perforated spacers.
Further explanation will be given by taking a manner of using a bonding package as an example.
Carrying out first layer bonding on the substrate and the spacing layer in a bonding mode;
and carrying out second bonding on the perforated packaging plate and the spacing layer in a bonding mode.
The micro-nano processing method for processing the metal layer on the semiconductor annular electrode by adopting the micro-nano processing method comprises the following steps: lithography exposure patterning, plasma etching, plating (electroplating), and the like. The coating comprises the following steps: electron beam evaporation coating, PVD sputter coating, thermal evaporation coating, and the like.
If the circuit board is provided with a groove, the on-chip plane type miniature ionization vacuum sensor is attached in the groove of the circuit board.
Next, the material of the ring electrode is exemplified as a metal material, and further description is given.
As shown in fig. 7, the manufacturing method includes:
s101, preparing an electron source on a substrate;
s102, patterning a ring-shaped electrode around the electron source by adopting photoetching exposure (as shown in FIG. 8);
and S103, processing a plurality of mutually insulated annular electrodes by using a film coating mode.
After preparing the electron source on the substrate, the method further comprises the following steps: and preparing an extraction electrode.
After the extraction electrode is prepared, the method further comprises the following steps:
preparing a circuit board, and attaching the on-chip planar miniature ionization vacuum sensor in the circuit board;
the leading-out electrode and the annular electrode are connected with a welding disc on the circuit board through welding wires;
carrying out first layer bonding on the substrate and the spacing layer in a bonding mode;
and carrying out second bonding on the perforated packaging plate and the spacing layer in a bonding mode.
The following further describes an example in which the material of the ring electrode is graphene in a semiconductor material. As shown in fig. 9, the manufacturing method includes:
s201, transferring graphene onto a substrate;
s202, etching a graphene annular electrode by using a micro-nano processing method;
and S203, processing an electron source in the central area of the annular electrode.
After preparing the electron source on the substrate, the method further comprises the following steps: preparing an extraction electrode; and processing a metal layer on the graphene annular electrode.
After the metal layer is processed on the graphene ring electrode, the method further comprises the following steps:
preparing a circuit board, and attaching the on-chip planar miniature ionization vacuum sensor in the circuit board;
the leading-out electrode and the annular electrode or the metal layer on the annular electrode are connected with the welding pad on the circuit board through welding wires;
carrying out first layer bonding on the substrate and the spacing layer in a bonding mode;
and carrying out second bonding on the perforated packaging plate and the spacing layer in a bonding mode.
The material of the ring electrode is taken as the carbon nanotube in the semiconductor material for further explanation.
As shown in fig. 10, the manufacturing method includes:
s301, depositing a carbon nanotube film on a substrate;
s302, etching a carbon nano tube annular electrode by using a micro-nano processing method;
and S303, processing an electron source in the central area of the annular electrode.
After preparing the electron source on the substrate, the method further comprises the following steps: preparing an extraction electrode; and processing a metal layer on the carbon nano tube annular electrode.
After the metal layer is processed on the carbon nano tube ring electrode, the method further comprises the following steps:
preparing a circuit board, and attaching the on-chip planar miniature ionization vacuum sensor in the circuit board;
the leading-out electrode and the annular electrode or the metal layer on the annular electrode are connected with the welding pad on the circuit board through welding wires;
carrying out first layer bonding on the substrate and the spacing layer in a bonding mode;
and carrying out second bonding on the perforated packaging plate and the spacing layer in a bonding mode.
The on-chip planar type micro ionization vacuum sensor with the ring-shaped electrode made of carbon nanotube material further includes another manufacturing method, as shown in fig. 11, the manufacturing method includes:
s401, patterning an annular region on a substrate by using a photoetching method;
s402, depositing a carbon nanotube film in the annular area to obtain a carbon nanotube annular electrode;
and S403, processing an electron source in the central area of the annular electrode.
After the electron source is prepared or processed, the method further comprises the following steps: preparing an extraction electrode; and processing a metal layer on the carbon nano tube annular electrode for electrically connecting with an external circuit.
After the metal layer is processed on the carbon nano tube ring electrode, the method further comprises the following steps:
preparing a circuit board, and attaching the on-chip planar miniature ionization vacuum sensor in the circuit board;
and the leading-out electrode and the annular electrode or the metal layer on the annular electrode are connected with the welding wire formed by the bonding pad on the circuit board through a pressure welding method (welding is carried out);
carrying out first layer bonding on the substrate and the spacing layer in a bonding mode;
and carrying out second bonding on the perforated packaging plate and the spacing layer in a bonding mode.
The bonding includes: anodic bonding, direct bonding, eutectic bonding, and the like.
Next, the packaging process of the embodiment of the present application is further explained, as shown in fig. 12.
Taking a silicon wafer as a substrate to process the on-chip planar micro ionization vacuum sensor as an example, a circuit board is prepared by selecting glass, the on-chip planar micro ionization vacuum sensor is attached in a groove of the glass circuit board (as shown in fig. 4), and the annular electrode and the extraction electrode are connected with a bonding pad on the circuit board through a welding wire. And performing first layer bonding by adopting a silicon chip spacing layer and a glass circuit board in an anodic bonding mode, and performing second bonding by adopting a glass packaging plate and the silicon chip spacing layer again. This formed a hollow cavity of a glass-silicon-glass triple bond. The glass packaging plate is provided with a through hole for gas exchange between the cavity and the outside.
Next, the detection range and sensitivity of the embodiment of the present application will be further described.
And after the on-chip vacuum sensor is prepared, all the annular electrodes are connected with the circuit board. And (2) connecting any two pins (namely two annular electrodes) with an external circuit, wherein the inner annular electrode is used as an electron collector, positive bias voltage is applied, the voltage value is about 50-150V, the outer annular electrode is used as an ion collector, negative bias voltage is applied, the voltage value is about-50-150V, the comparison with a standard vacuum gauge (a standard vacuum sensor) is carried out, the pressure intensity detection range and the corresponding sensitivity at the moment can be obtained according to the working principle, and the corresponding application range and the sensitivity are marked. And selecting any other two ring electrodes, and obtaining the pressure measurement range and the sensitivity at the moment in the same way. In this way, the measurement range and sensitivity of the on-chip planar micro vacuum sensor according to the embodiment of the present application can be obtained. In practical application, different measuring ranges can be selected by selecting different electrodes according to requirements.
In the system of the present application, the use of an electron source and multiple ring electrodes on the same substrate can reduce the volume and mass of the ionization vacuum sensor; the use of the on-chip electron source can reduce energy consumption and heat generation, thereby reducing outgassing; by selecting two from a plurality of ring electrodes surrounding the electron source, a range of measurement can be selected. The distance between the on-chip micro electron source and each annular electrode of the on-chip planar micro ionization vacuum sensor prepared by micro-nano processing can be made to be hundreds of microns or even several microns, and the measurement upper limit of the ionization vacuum sensor can be effectively improved. On the other hand, the embodiment of the application has a plurality of annular electrodes, two of which can be flexibly selected to be used as an electron collector and an ion collector respectively, so that the measuring range is expanded, and different measuring ranges can be selected according to requirements. The implementation mode of the application has the advantages of simple structure and processing, and the electron source adopts the miniature electron source which is formed on the chip, so that the size of the ionization vacuum sensor is greatly reduced. Due to the advantages of chip integration, small size, light weight, portability, low energy consumption and the like, the application field of the vacuum electronic device can be widened, and the vacuum electronic device can be integrated with other vacuum electronic devices and solid electronic devices. The adopted on-chip electron source has the characteristics of integration and easy processing, has higher emission current and emission current density, and can improve the detection sensitivity. Because the structure and the size of the embodiment of the application are flexible and variable, the detection range of the electron source can be changed by changing the distance between the ion collecting electrode, the electron collecting electrode and the on-chip electron source, and the detection range of the ionization vacuum sensor is greatly widened. Meanwhile, the on-chip planar miniature ionization vacuum sensor is simple in structure, can be prepared in a micro-nano machining mode in large batch, improves production efficiency and reduces production cost. Therefore, the embodiment of the application has the advantages of small size, low energy consumption, light weight, portability, wide detection range, high detection sensitivity, simple processing, low cost and the like.
The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (9)
1. An on-chip planar miniature ionization vacuum sensor comprising: an electron source and a plurality of ring electrodes on the same substrate;
the electron source is used for emitting electrons;
the plurality of annular electrodes surround the electron source and are used for applying positive bias to the electrons according to input voltage, collecting the electrons and determining electron current, or applying negative bias to ions, collecting the ions and determining ion current;
the circuit board is provided with a welding disc and a pin, and the extraction electrode;
the bonding pad is connected with the extraction electrode and the annular electrode and is used for transmitting the input of an external circuit to the extraction electrode and the annular electrode and transmitting the electronic current and the ionic current collected by the annular electrode to the pin;
the pin is used for connecting an external circuit, transmitting the input of the external circuit to the extraction electrode and the annular electrode through the bonding pad, or transmitting the received electronic current and the received ionic current to the external circuit;
the extraction electrode is connected with the electron source and is used for transmitting the input of an external circuit to the electron source.
2. The on-chip planar miniature ionization vacuum sensor according to claim 1 further comprising a spacer layer for encapsulation and a perforated encapsulation plate on said circuit board.
3. The on-chip planar miniature ionizing vacuum sensor of claim 1 wherein said electron source is an on-chip miniature electron source comprising: single electron sources or multiple arrays of electron sources.
4. The on-chip planar miniature ionizing vacuum sensor of claim 3 wherein said on-chip miniature electron source comprises: the device comprises an on-chip micro thermal emission electron source, an on-chip micro tunneling field emission electron source, a Spindt on-chip electron source, a silicon needle point field emission array on-chip electron source, an MIM multi-layer tunneling electron source, an on-chip micro thermal emission electron source and a surface tunneling electron source based on a resistance change material.
5. The on-chip planar miniature ionizing vacuum sensor of claim 4 wherein the filament material of said on-chip miniature thermionic emission electron source comprises: graphene and/or carbon nanotubes.
6. A method of manufacturing an on-chip planar miniature ionizing vacuum sensor for manufacturing the on-chip planar miniature ionizing vacuum sensor of claim 1, comprising:
preparing an electron source on a substrate and preparing an annular electrode by adopting a micro-nano processing or electroplating method.
7. The method of manufacturing an on-chip planar miniature ionizing vacuum sensor according to claim 6 wherein the material of the ring electrode comprises: metal and/or semiconductor.
8. The method of manufacturing an on-chip planar miniature ionization vacuum sensor as recited in claim 6, further comprising, after said preparing an electron source on a substrate: preparing an extraction electrode; and when the annular electrode is made of a non-metal material, processing a metal layer on the annular electrode.
9. The method of manufacturing an on-chip planar miniature ionization vacuum sensor of claim 8, after machining a metal layer on said ring electrode, further comprising:
preparing a circuit board, and attaching the on-chip planar miniature ionization vacuum sensor in the circuit board;
the leading-out electrode and the annular electrode or the metal layer on the annular electrode are connected with the welding pad on the circuit board through welding wires;
the circuit board is encapsulated using spacer layers and perforated spacers.
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| CN1240933A (en) * | 1999-06-25 | 2000-01-12 | 清华大学 | Very-high-vacuity micro-ionization meter with very low gas absorption and release rates |
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| CN103959032A (en) * | 2011-09-08 | 2014-07-30 | 英飞康有限责任公司 | Ionization vacuum measuring cell |
| CN107993908A (en) * | 2017-11-27 | 2018-05-04 | 温州大学 | A kind of ion gauge and its application process based on field-transmitting cathode electron source |
| CN110610839A (en) * | 2019-10-17 | 2019-12-24 | 北京大学 | On-chip micro thermal electron source and manufacturing method thereof |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1240933A (en) * | 1999-06-25 | 2000-01-12 | 清华大学 | Very-high-vacuity micro-ionization meter with very low gas absorption and release rates |
| CN102175755A (en) * | 2011-02-16 | 2011-09-07 | 西安交通大学 | Carbon nanotube film micro-nano ionizing sensor and manufacture method thereof |
| CN103959032A (en) * | 2011-09-08 | 2014-07-30 | 英飞康有限责任公司 | Ionization vacuum measuring cell |
| CN107993908A (en) * | 2017-11-27 | 2018-05-04 | 温州大学 | A kind of ion gauge and its application process based on field-transmitting cathode electron source |
| CN110610839A (en) * | 2019-10-17 | 2019-12-24 | 北京大学 | On-chip micro thermal electron source and manufacturing method thereof |
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