CN111136982A - 一种高阻水、高散热及高反射的太阳能电池背板聚酯薄膜 - Google Patents
一种高阻水、高散热及高反射的太阳能电池背板聚酯薄膜 Download PDFInfo
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- CN111136982A CN111136982A CN201811304662.2A CN201811304662A CN111136982A CN 111136982 A CN111136982 A CN 111136982A CN 201811304662 A CN201811304662 A CN 201811304662A CN 111136982 A CN111136982 A CN 111136982A
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- 229920006267 polyester film Polymers 0.000 title claims abstract description 293
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 264
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 132
- 239000011347 resin Substances 0.000 claims abstract description 71
- 229920005989 resin Polymers 0.000 claims abstract description 71
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052582 BN Inorganic materials 0.000 claims abstract description 64
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 36
- 230000017525 heat dissipation Effects 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims description 110
- 230000005540 biological transmission Effects 0.000 claims description 37
- 229920000728 polyester Polymers 0.000 claims description 18
- 238000002310 reflectometry Methods 0.000 claims description 17
- 239000011256 inorganic filler Substances 0.000 claims description 15
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 4
- 238000001125 extrusion Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 239000005995 Aluminium silicate Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 235000012211 aluminium silicate Nutrition 0.000 claims description 2
- 150000008366 benzophenones Chemical class 0.000 claims description 2
- 150000001565 benzotriazoles Chemical class 0.000 claims description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 150000003873 salicylate salts Chemical class 0.000 claims description 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 28
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
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- B32B2307/00—Properties of the layers or laminate
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- B32B2307/416—Reflective
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- B32B2307/7265—Non-permeable
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- C08K3/20—Oxides; Hydroxides
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- C08K2003/2241—Titanium dioxide
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
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- C08K3/24—Acids; Salts thereof
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Abstract
本发明提供了一种太阳能电池背板用聚酯薄膜。所述聚酯薄膜分为ABA三层结构,所述A层由PET树脂、氮化硼、二氧化钛及抗UV剂组成;所述B层由PET/PEN共混树脂、滑石粉及二氧化钛组成。本发明提供的太阳能背板用聚酯薄膜不仅具有高阻水和高散热的功能,同时还具有高反射的功能,可以有效地延长太阳能电池组件的使用寿命,提高组件收益。
Description
技术领域
本发明涉及太阳能电池组件技术领域,具体涉及一种高阻水、高散热及高反射的太阳能电池背板聚酯薄膜。
背景技术
太阳能电池组件结构通常包括玻璃层、EVA封装层、硅电池片、EVA封装层和太阳能电池背板。其中,太阳能电池背板主要作用是给太阳能电池片提供支撑,阻止水蒸气进入组件内部,提高电池组件的使用寿命、发电效率以及稳定性。目前,太阳能电池背板通常是在聚酯基材表面涂覆含氟涂料或者贴合氟膜,氟膜或氟涂层虽然耐候性能较佳,但是阻水性能较差,而中间层聚酯阻水性能也一般。然而,太阳能电池组件在使用过程中水汽的渗入会缩短太阳能电池片的使用寿命。因此,提高太阳能电池背板的水汽阻隔性能就显得尤为有意义。
由于水蒸气对太阳能电池组件的工作效率和使用寿命有很大的影响,因此,光伏行业对太阳能电池背板的阻水性能也越来越高。目前大部分背板提高阻水性能主要是通过加入阻隔层,使得背板结构和加工工艺变得复杂,如授权公告号为CN 206340561 U中国专利公开了一种高阻水含铝箔太阳能组件背板,在背板中加入了一层铝箔,得到一种高阻水背板;授权公告号为CN 206271721 U中国专利公开了一种多层结构的高阻隔型太阳能电池背板,在背板中加入一层高阻隔PVDC层,从而得到一种高阻水太阳能电池背板。本发明通过对聚酯基材进行改性,提高聚酯基材的阻水性能。此外,该聚酯基膜还具备优良的散热性能和较高的反射率。用该改性聚酯基材薄膜制备的太阳能电池背板将具有良好的阻水性能,同时,还具有优良的散热功能和较高反射率,用该背板组装的太阳能电池组件也将会产生良好的经济效益。
发明内容
本发明的目的在于提供一种高阻水、高散热及高反射的太阳能电池背板聚酯薄膜,用该聚酯薄膜复合得到的太阳能电池背板具有良好的阻水性能,同时,还还具有优良的散热功能和较高的反射率,可以有效延长太阳能电池组件的使用寿命。
为了达到上述目的,本发明采用了如下的技术方案:
一种高阻水、高散热及高反射的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜为ABA三层结构,其中,所述聚酯薄膜A层包括无机填料、导热填料、抗UV剂及聚酯组成,所述聚酯薄膜B层中包括无机填料a、无机填料b及混合聚酯组成。
进一步的,所述聚酯薄膜A层中的无机填料为二氧化钛、二氧化硅、硫酸钡、三氧化二铝及氧化锌中的一种或几种的组合,所述聚酯薄膜A层中的导热填料为氮化硼、氮化铝、氧化镁、氧化锌一种或几种的组合,所述聚酯薄膜A层中的聚酯为PET和PEN树脂的一种,所述聚酯薄膜A层中的抗UV剂为二苯甲酮类、苯并***类或水杨酸脂类中的一种或几种的组合。
进一步的,所述聚酯薄膜B层中无机填料a为二氧化钛、二氧化硅、硫酸钡、三氧化二铝或氧化锌中的一种或几种的组合;所述聚酯薄膜B层中无机填料b为滑石粉、碳酸钙、高岭土或氧化钙中的一种或几种组合,所述聚酯薄膜B层中的混合聚酯为PET树脂或PEN树脂的两种组合。
进一步的,所述聚酯薄膜A层中无机填料优选为二氧化钛。
进一步的,所述聚酯薄膜A层中导热填料优选为氮化硼。
进一步的,所述聚酯薄膜A层中聚酯优选为PET树脂。
进一步的,所述聚酯薄膜A层中抗UV剂优选为二苯甲酮类。
进一步的,所述聚酯薄膜B层中无机填料a优选为二氧化钛。
进一步的,所述聚酯薄膜B层中无机填料b优选滑石粉。
进一步的,所述聚酯薄膜A层中二氧化钛含量为1-5%,氮化硼含量为1-15%;抗UV添加剂含量为2%; PET树脂含量为78-96%。
进一步的,所述聚酯薄膜B层中滑石粉含量为0.5-5%,所述聚酯薄膜B层中二氧化钛含量为1-5%;所述聚酯薄膜B层中混合树脂含量为90-98.5%,其中PET占60%,PEN占40%。
进一步的,所述聚酯薄膜的水蒸气透过率为0.3-1.4g/m2·24h,所述聚酯薄膜的导热系数为1-5 W/(m·k),所述聚酯薄膜的反射率为85-94%。
进一步的,所述聚酯薄膜A层中二氧化钛添加量优选为2-4%,所述聚酯薄膜A层中氮化硼添加量优选为3-12%,所述聚酯薄膜A层中抗UV剂添加量为2%,所述聚酯薄膜A层中PET树脂含量为82-93%。
进一步的,所述聚酯薄膜B层中滑石粉含量优选为1-3%,所述聚酯薄膜B层中二氧化钛含量优选为 2-5%,所述聚酯薄膜B层中混合树脂含量优选为92-97%,其中PET占60%,PEN占40%。
进一步的,所述聚酯薄膜A层中二氧化钛添加量最优为4%,聚酯薄膜A层中氮化硼添加量最优为10%,聚酯薄膜A层中抗UV剂添加量为2%,所述聚酯薄膜A层中PET树脂含量最优为84%。
进一步的,所述聚酯薄膜B层中滑石粉含量最优为1.5%,所述聚酯薄膜B层中二氧化钛含量最优为 4%,所述聚酯薄膜B层中混合树脂含量最优95.5%,其中PET占60%,PEN占40%。
进一步的,所述聚酯薄膜A层中二氧化钛粒度为6000-12000目,所述聚酯薄膜A层中氮化硼粒度为50nm。所述高阻水聚酯薄膜B层中滑石粉粒度为6000-12000目,所述高阻水聚酯薄膜B层中二氧化钛粒度为6000-12000目。
进一步的,所述聚酯薄膜A层中二氧化钛粒度优选为8000-11000目。所述高阻水聚酯薄膜B层中滑石粉粒度优选为7000-10000目,所述聚酯薄膜B层中二氧化钛粒度优选为8000-11000目。
进一步的,所述高阻水聚酯薄膜A层中二氧化钛粒度最优为10000目。所述聚酯薄膜B层中滑石粉粒度最优为8000目,所述聚酯薄膜B层中二氧化钛粒度最优为10000目。
进一步的,所述聚酯薄膜的总厚度为150-350μm,所述聚酯薄膜A层的厚度为10-50μm,所述聚酯薄膜B层的厚度为130-330μm。
进一步的,所述聚酯薄膜总厚度优选为200-300μm,所述聚酯薄膜A层厚度优选为15-30μm,所述聚酯薄膜B层厚度优选为150-250μm。
进一步的,所述聚酯薄膜总厚度最优为250μm,所述聚酯薄膜A层厚度最优为20μm,所述聚酯薄膜 B层厚度最优为210μm。
进一步的,所述聚酯薄膜的制备方法为三层共挤技术,先后通过铸片、纵拉、横拉及收卷得到ABA三层结构的聚酯薄膜。
进一步的,所述聚酯薄膜的水蒸气透过率优选为0.3-1.0g/m2·24h,所述聚酯薄膜的导热系数优选为2-5W/(m·k),所述聚酯薄膜的反射率优选为87-94%。
进一步的,所述聚酯薄膜的水蒸气透过率最优为0.4g/m2·24h,所述聚酯薄膜的导热系数最优为4 W/(m·k),所述聚酯薄膜的反射率最优为94%。
进一步的,所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中 PET含量为56.7%,PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为20μm,B层厚度为210μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率为水蒸气透过率最优为0.4g/m2·24h,所述聚酯薄膜的导热系数最优为4W/(m·k),所述聚酯薄膜的反射率最优为94%。
本发明的有益效果为:
目前,光伏行业提升背板阻水性能主要是通过增加阻隔层来实现高阻水,然而,增加阻隔层不仅使得生产工艺变得更加复杂,同时使得生产成本也会大大增加,不利于大规模推广。本发明利用现有设备,采用三层共挤技术得到高阻水聚酯薄膜,该聚酯薄膜水蒸气透过率可达0.3-1.4g/m2·24h,同时,该聚酯薄膜还具有良好的散热功能和较高的反射率。此外,本发明所用生产工艺简单,生产成本低,有利于大规模推广本发明公开的高阻水聚酯薄膜。用该聚酯基膜复合得到的背板可以延长组件的使用寿命,提高组件的经济收益。
附图说明
图1为本发明德剖面结构示意图
附图中标记如下所示:1-A层;2-B层;3-A层。
具体实施方式
本发明制备的太阳能背板用聚酯薄膜,按照下述方法进行物性测试:
反射率:按照GB/T3979-2008标准,采用ColorQuest XE分光测色仪(Hunterlab公司制),在D65光源条件下,通过积分球d/8°结构测试其反射率,反射率数据为400-700nm每隔10nm波长的反射率的加权平均值,即为聚酯基膜反射率。
水蒸气透过率:按照GB/T26253-2010,采用美国MOCON PERMATRAN-W Moddel 3/61水蒸气透过率测试仪,试样面积约20cm2,在38℃和相对湿度为90%的条件下进行水蒸气透过率测试,测试方法为红外法。
导热系数:按照GB/T10294-2008,采用湘潭湘科DRL-Ⅲ导热系数测试仪,对聚酯薄膜样品进行导热系数测试。
为了更好的说明本发明,便于理解本发明的技术方案,本发明的典型但非限制性的实施例如下:
实施例1
一种用于太阳能电池背板的高阻水聚酯薄膜,所述聚酯薄膜的制备方法为三层共挤技术,先后通过铸片、纵拉、横拉和收卷得到ABA三层结构的聚酯薄膜。
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为1%,抗UV剂含量为2%,PET树脂含量为96%;所述聚酯薄膜B层中滑石粉含量为0.5%,二氧化钛含量1%,混合树脂含量为98.5%,其中PET含量为60%, PEN含量为40%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为200μm,其中A层厚度为15μm, B层厚度为170μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例2
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为1%,抗UV剂含量为2%,PET树脂含量为96%;所述聚酯薄膜B层中滑石粉含量为0.5%,二氧化钛含量1%,混合树脂含量为98.5%,其中PET含量为59.1%, PEN含量为39.4%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为200μm,其中A层厚度为20μm, B层厚度为160μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例3
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为1%,抗UV剂含量为2%,PET树脂含量为96%;所述聚酯薄膜B层中滑石粉含量为0.5%,二氧化钛含量1%,混合树脂含量为98.5%,其中PET含量为59.1%, PEN含量为39.4%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为15μm, B层厚度为220μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例4
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为1%,抗UV剂含量为2%,PET树脂含量为96%;所述聚酯薄膜B层中滑石粉含量为0.5%,二氧化钛含量1%,混合树脂含量为98.5%,其中PET含量为59.1%, PEN含量为39.4%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为300μm,其中A层厚度为20μm, B层厚度为260μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例5
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为1%,抗UV剂含量为2%,PET树脂含量为96%;所述聚酯薄膜B层中滑石粉含量为0.5%,二氧化钛含量1%,混合树脂含量为98.5%,其中PET含量为59.1%, PEN含量为39.4%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为350μm,其中A层厚度为20μm, B层厚度为310μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例6
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为2%,抗UV剂含量为2%,PET树脂含量为95%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量2%,混合树脂含量为97%,其中PET含量为58.2%, PEN含量为38.8%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为15μm, B层厚度为220μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例7
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为93%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量4%,混合树脂含量为95%,其中PET含量为57%,PEN 含量为38%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为15μm, B层厚度为220μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例8
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为5%,抗UV剂含量为2%,PET树脂含量为92%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量5%,混合树脂含量为94%,其中PET含量为56.4%, PEN含量为37.6%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为15μm, B层厚度为220μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例9
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为93%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量4%,混合树脂含量为95%,其中PET含量为57%,PEN 含量为38%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为15μm, B层厚度为220μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例10
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为93%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量4%,混合树脂含量为95%,其中PET含量为57%,PEN 含量为38%。所述聚酯薄膜A层中二氧化钛粒径为12000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为15μm, B层厚度为220μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例11
所述聚酯薄膜A层中氮化硼含量为3%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为91%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量4%,混合树脂含量为95%,其中PET含量为57%,PEN 含量为38%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为200μm,其中A层厚度为10μm, B层厚度为180μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例12
所述聚酯薄膜A层中氮化硼含量为7%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为87%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量4%,混合树脂含量为95%,其中PET含量为57%,PEN 含量为38%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为20μm, B层厚度为210μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例13
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量4%,混合树脂含量为95%,其中PET含量为57%,PEN 含量为38%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为300μm,其中A层厚度为30μm, B层厚度为240μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例14
所述聚酯薄膜A层中氮化硼含量为12%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为82%;所述聚酯薄膜B层中滑石粉含量为1%,二氧化钛含量4%,混合树脂含量为95%,其中PET含量为57%,PEN 含量为38%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为550μm,其中A层厚度为30μm, B层厚度为290μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例15
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为0.5%,二氧化钛含量4%,混合树脂含量为95.5%,其中PET含量为57.3%, PEN含量为38.2%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为300μm,其中A层厚度为 20μm,B层厚度为260μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例16
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%, PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为300μm,其中A层厚度为 20μm,B层厚度为260μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例17
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为3%,二氧化钛含量4%,混合树脂含量为91%,其中PET含量为55.8%, PEN含量为37.2%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为300μm,其中A层厚度为 20μm,B层厚度为260μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例18
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%, PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为6000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为 20μm,B层厚度为210μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例19
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%, PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为 20μm,B层厚度为210μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例20
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%,PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为12000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为 20μm,B层厚度为210μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例21
所述聚酯薄膜A层中氮化硼含量为2%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为92%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%, PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为 30μm,B层厚度为190μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例22
所述聚酯薄膜A层中氮化硼含量为5%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为89%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%, PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为 30μm,B层厚度为190μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例23
所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%, PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为 30μm,B层厚度为190μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例24
所述聚酯薄膜A层中氮化硼含量为15%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为79%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%, PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B 层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为350μm,其中A层厚度为 30μm,B层厚度为290μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
实施例25
所述聚酯薄膜A层中氮化硼含量为1%,二氧化钛含量为1%,抗UV剂含量为2%,PET树脂含量为96%;所述聚酯薄膜B层中滑石粉含量为0.5%,二氧化钛含量1%,混合树脂含量为98.5%,其中PET含量为59.1%, PEN含量为39.4%。所述聚酯薄膜A层中二氧化钛粒径为6000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为6000目,二氧化钛粒径为6000目。所述聚酯薄膜总厚度为150μm,其中A层厚度为10μm, B层厚度为130μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率测试结果如表1所示。
表1实施例1-20提供的聚酯薄膜测试结果
由上述表1所示的数据可以得出,其中实施例17、19、22、23为优选实施例,所述聚酯薄膜的水蒸气透过率优选为0.3-0.7g/m2·24h,所述聚酯薄膜的导热系数优选为3-4W/(m·k),所述聚酯薄膜的反射率优选为94%。
特别的,实施例19提供的聚脂薄膜的综合性能最好,所述聚酯薄膜的水蒸气透过率最优为0.4 g/m2·24h,所述聚酯薄膜的导热系数最优为4W/(m·k),所述聚酯薄膜的反射率最优为94%。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (10)
1.一种高阻水、高散热及高反射的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜为ABA三层结构,其中,所述聚酯薄膜A层包括无机填料、导热填料、抗UV剂及聚酯组成,所述聚酯薄膜B层中包括无机填料a、无机填料b及混合聚酯组成。
2.根据权利要求1的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜A层中的无机填料为二氧化钛、二氧化硅、硫酸钡、三氧化二铝及氧化锌中的一种或几种的组合,所述聚酯薄膜A层中的导热填料为氮化硼、氮化铝、氧化镁、氧化锌一种或几种的组合,所述聚酯薄膜A层中的聚酯为PET和PEN树脂的一种,所述聚酯薄膜A层中的抗UV剂为二苯甲酮类、苯并***类或水杨酸脂类中的一种或几种的组合。
3.根据权利要求1的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜B层中无机填料a为二氧化钛、二氧化硅、硫酸钡、三氧化二铝或氧化锌中的一种或几种的组合;所述聚酯薄膜B层中无机填料b为滑石粉、碳酸钙、高岭土或氧化钙中的一种或几种组合,所述聚酯薄膜B层中的混合聚酯为PET树脂或PEN树脂的两种组合。
4.根据权利要求2的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜A层中二氧化钛含量为1-5%,氮化硼含量为1-15%;抗UV添加剂含量为2%;PET树脂含量为78-96%。
5.根据权利要求3的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜B层中滑石粉含量为0.5-5%,所述聚酯薄膜B层中二氧化钛含量为1-5%;所述聚酯薄膜B层中混合树脂含量为90-98.5%,其中PET占60%,PEN占40%。
6.根据权利要求1的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜的水蒸气透过率为0.3-1.4g/m2·24h,所述聚酯薄膜的导热系数为1-5W/(m·k),所述聚酯薄膜的反射率为85-94%。
7.根据权利要求2、3的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜A层中二氧化钛粒度为6000-12000目,所述聚酯薄膜A层中氮化硼粒度为50nm。所述高阻水聚酯薄膜B层中滑石粉粒度为6000-12000目,所述高阻水聚酯薄膜B层中二氧化钛粒度为6000-12000目。
8.根据权利要求1的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜的总厚度为150-350μm,所述聚酯薄膜A层的厚度为10-50μm,所述聚酯薄膜B层的厚度为130-330μm。
9.根据权利要求1的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜的制备方法为三层共挤技术,先后通过铸片、纵拉、横拉及收卷得到ABA三层结构的聚酯薄膜。
10.根据权利要求1的太阳能电池背板聚酯薄膜,其特征在于:所述聚酯薄膜A层中氮化硼含量为10%,二氧化钛含量为4%,抗UV剂含量为2%,PET树脂含量为84%;所述聚酯薄膜B层中滑石粉含量为1.5%,二氧化钛含量4%,混合树脂含量为94.5%,其中PET含量为56.7%,PEN含量为37.8%。所述聚酯薄膜A层中二氧化钛粒径为10000目,氮化硼粒径为50nm,所述聚酯薄膜B层中滑石粉粒径为8000目,二氧化钛粒径为10000目。所述聚酯薄膜总厚度为250μm,其中A层厚度为20μm,B层厚度为210μm。该聚酯薄膜的水蒸气透过率、导热系数以及反射率为水蒸气透过率最优为0.4g/m2·24h,所述聚酯薄膜的导热系数最优为4W/(m·k),所述聚酯薄膜的反射率最优为94%。
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CN112388930A (zh) * | 2020-10-28 | 2021-02-23 | 广东宝佳利绿印股份有限公司 | 一种绝缘高导热三层共挤bopet薄膜 |
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CN102738275A (zh) * | 2011-04-12 | 2012-10-17 | 苏州尚善新材料科技有限公司 | 一种太阳能电池组件背板及其制备方法 |
CN106910788A (zh) * | 2017-03-10 | 2017-06-30 | 宁波长阳科技股份有限公司 | 一种高阻水型太阳能背板用聚酯薄膜及其制备方法 |
JP6405847B2 (ja) * | 2014-09-30 | 2018-10-17 | 大日本印刷株式会社 | ガラス密着シート |
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CN102738275A (zh) * | 2011-04-12 | 2012-10-17 | 苏州尚善新材料科技有限公司 | 一种太阳能电池组件背板及其制备方法 |
JP6405847B2 (ja) * | 2014-09-30 | 2018-10-17 | 大日本印刷株式会社 | ガラス密着シート |
CN106910788A (zh) * | 2017-03-10 | 2017-06-30 | 宁波长阳科技股份有限公司 | 一种高阻水型太阳能背板用聚酯薄膜及其制备方法 |
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CN112388930A (zh) * | 2020-10-28 | 2021-02-23 | 广东宝佳利绿印股份有限公司 | 一种绝缘高导热三层共挤bopet薄膜 |
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