CN111123344A - Scintillator array with multilayer reflection film and preparation method and application thereof - Google Patents
Scintillator array with multilayer reflection film and preparation method and application thereof Download PDFInfo
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- CN111123344A CN111123344A CN201911356229.8A CN201911356229A CN111123344A CN 111123344 A CN111123344 A CN 111123344A CN 201911356229 A CN201911356229 A CN 201911356229A CN 111123344 A CN111123344 A CN 111123344A
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- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
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Abstract
The invention relates to the technical field of radiation detection, in particular to a scintillator array with a multilayer reflective film and a preparation method and application thereof. The invention provides a preparation method of a scintillator array with a multilayer reflection film, which comprises the following steps: depositing a high-reflection film on the surface of the scintillator array prepared in situ to obtain a scintillator array with a multilayer reflection film; the deposition method comprises one or more of an atomic layer deposition method, a physical vapor deposition method and a chemical vapor deposition method. According to the invention, the high-reflection film is deposited on the surface of the scintillator array by adopting the atomic layer deposition method, the physical vapor deposition method or the chemical vapor deposition method, all scintillator strips in the scintillator array can be coated at the same time, and each scintillator strip does not need to be coated with a film independently, so that the manufacturing cost can be saved, the production efficiency can be improved, and the small-size scintillator array can be adapted.
Description
Technical Field
The invention relates to the technical field of radiation detection, in particular to a scintillator array with a multilayer reflective film and a preparation method and application thereof.
Background
Scintillators are materials capable of emitting light after absorbing high-energy particles or rays, and play an important role in the field of radiation detection. The scintillator can be processed into various shapes and sizes so as to match with detectors of different types and sizes, the scintillator array is generally formed by orderly arranging a plurality of scintillator strips in one-dimensional or two-dimensional direction, and light-tight substances are filled in the adjacent scintillator strips so as to prevent the light of the scintillator strips from being interfered to the adjacent scintillator strips. However, the gaps in the small-sized scintillator array are narrow, and bubbles or other conditions are likely to occur when the gaps are filled with the light-impermeable substance, so that a rough contact surface is formed between the scintillator and the gaps after most of the light-impermeable substance is filled. Therefore, a part of the fluorescence is scattered or propagated to the adjacent scintillator strip through the rough contact interface, and in the detector requiring the scintillator array, if the leaked fluorescence is absorbed by the photodiode of the adjacent detection unit, signal crosstalk is caused, which leads to inaccurate signals and unreliable results.
Chinese patent CN207123619U discloses a scintillation crystal array, which uses mechanically polished strip-shaped scintillator crystals as scintillator strips, and then uses transparent colloid to bond the scintillator strips in corresponding grooves on a processed transparent substrate, wherein the end surface of each scintillator strip in the groove is plated with an antireflection film, and the side surface of each scintillator strip is plated with a highly reflective coating layer; and filling light-blocking mixtures into gaps among the scintillator strips to finally form the scintillator block. However, according to the scheme, each scintillator strip needs to be coated with a film respectively, then the scintillator strips are inserted into the grooves of the base body, and then the light-blocking mixture is filled among the scintillator strips, so that the preparation process is complex, the finally formed scintillator block is large in size and cannot adapt to a micro gap array due to the fact that the light-blocking mixture needs to be filled among the scintillator strips, the alignment precision between each scintillator strip and the grooves of the base plate cannot be guaranteed, and the situation that the coating film is scratched to generate gaps cannot be avoided in the installation process.
Disclosure of Invention
The invention aims to provide a preparation method of a scintillator array with a multilayer reflection film, in particular to a method for coating a film on the surface of a scintillator array prepared in situ.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a scintillator array with a multilayer reflection film, which comprises the following steps: depositing a high-reflection film on the surface of the scintillator array prepared in situ to obtain a scintillator array with a multilayer reflection film; the deposition method comprises one or more of an atomic layer deposition method, a physical vapor deposition method and a chemical vapor deposition method.
Preferably, when the high-reflection film is deposited by adopting the atomic layer deposition method, the pressure of the atomic layer deposition is 1.333X 10-4Pa, the temperature is 80-300 ℃;
when the high-reflection film is deposited by adopting a physical vapor deposition method, the pressure of the physical vapor deposition is 1.333 multiplied by 10- 4PPa at 50-700 ℃;
when the chemical vapor deposition method is adopted to deposit the high-reflection film, the pressure of the chemical vapor deposition is 1.333X 10- 4PPa, the temperature is 180-400 ℃.
Preferably, the thickness of the high-reflection film is 1nm to 100 μm.
Preferably, the high-reflection film comprises a metal composite film or a multilayer dielectric reflection film;
the metal composite film comprises a metal film and a protective film arranged on the outer surface of the metal film;
the multilayer dielectric reflection film comprises a high-refractive-index film and a low-refractive-index film which are alternately arranged in sequence, the high-refractive-index film is in contact with the surface of the scintillator array, and the low-refractive-index film is arranged on the outermost side.
Preferably, the metal film includes an aluminum film, a silver film, or a gold film; the protective film comprises a silicon dioxide film, an aluminum oxide film, a magnesium oxide film or a lithium fluoride film;
the low refractive index film comprises a silicon dioxide film, a sodium hexafluoroaluminate film or a magnesium fluoride film; the high refractive index film includes a zirconium dioxide film, a titanium dioxide film, a zinc sulfide film, or a zinc selenide film.
The invention also provides a scintillator array with the multilayer reflecting film, and the scintillator array is prepared by the preparation method of the technical scheme.
The invention also provides application of the scintillator array with the multilayer reflecting film in the technical scheme in the radiation detection field.
Preferably, the scintillator array with the multilayer reflective film is used in an XCT imaging device or a PET imaging device.
The invention provides a preparation method of a scintillator array with a multilayer reflection film, which comprises the following steps: depositing a high-reflection film on the surface of the scintillator array prepared in situ to obtain a scintillator array with a multilayer reflection film; the deposition method comprises one or more of an atomic layer deposition method, a physical vapor deposition method and a chemical vapor deposition method. According to the invention, the high-reflection film is deposited on the surface of the scintillator array by adopting the atomic layer deposition method, the physical vapor deposition method or the chemical vapor deposition method, so that all scintillator strips in the scintillator array can be coated at the same time, and each scintillator strip does not need to be coated with a film independently, so that the manufacturing cost can be saved, and the production efficiency can be improved; in addition, the preparation method provided by the invention can accurately control the thickness of the high-reflection film, and light-blocking substances are not required to be filled between the scintillator strips, so that the method is suitable for a small-size scintillator array.
Drawings
FIG. 1 is a schematic diagram of a scintillator array with a multilayer reflective film prepared according to an embodiment of the present invention.
Detailed Description
The invention provides a preparation method of a scintillator array with a multilayer reflection film, which comprises the following steps: depositing a high-reflection film on the surface of the scintillator array prepared in situ to obtain a scintillator array with a multilayer reflection film; the deposition method comprises one or more of an atomic layer deposition method, a physical vapor deposition method and a chemical vapor deposition method.
The invention deposits a high-reflection film on the surface of the scintillator array prepared in situ. In the present invention, the in-situ preparation is preferably inkjet printing. The preparation process of the scintillator array is not particularly limited in the present invention, and the preparation process known to those skilled in the art can be adopted according to actual production requirements.
In the invention, the deposition method comprises one or more of an atomic layer deposition method, a physical vapor deposition method and a chemical vapor deposition method, and the chemical vapor deposition method preferably comprises a plasma enhanced chemical vapor deposition method.
In the present invention, when the high-reflective film is deposited by the atomic layer deposition method, the pressure of the atomic layer deposition is preferably 1.333 × 10-4Pa, the temperature is preferably 80-300 ℃, and more preferably 120-150 ℃;
when the high-reflection film is deposited by physical vapor deposition, the pressure of the physical vapor deposition is preferably 1.333X 10-4Pa, the temperature is preferably 50-700 ℃, and more preferably 50-100 ℃;
when a chemical vapor deposition method is used for depositing the high-reflection film, the pressure of the chemical vapor deposition is preferably 1.333X 10-4Pa, the temperature is preferably 180-400 ℃, and more preferably 200-220 ℃;
when the plasma enhanced chemical vapor deposition method is adopted to deposit the high-reflection film, the pressure of the plasma enhanced chemical vapor deposition is preferably 1.333X 10-4Pa, the temperature is preferably 100-400 ℃.
In the present invention, the thickness of the high-reflection film is preferably 1nm to 100nm, and more preferably 55 nm; the thickness of the high-reflection film can be adjusted in a wide range.
In the present invention, the high-reflection film is preferably a metal composite film, and the metal composite film preferably includes a metal film and a protective film disposed on an outer surface of the metal film. In the present invention, the metal film preferably includes an aluminum film, a silver film or a gold film, and the thickness of the metal film is preferably 25 nm; the protective film preferably includes a silicon dioxide film, an aluminum oxide film, a magnesium oxide film, or a lithium fluoride film, and the thickness of the protective film is preferably 30 nm. In the present invention, the metal film mainly plays a role of emission, and the protective film plays a role of protecting the internal metal film from atmospheric corrosion.
In the present invention, the high-reflection film is preferably a multilayer dielectric reflection film, the multilayer dielectric reflection film preferably includes a high refractive index film and a low refractive index film alternately arranged in this order, the high refractive index film is in contact with the scintillator array surface, and the low refractive index film is at the outermost side. In the present invention, the low refractive index film preferably includes a silicon dioxide film, a sodium hexafluoroaluminate film or a magnesium fluoride film, and the thickness of the low refractive index film is preferably λ0/4，λ0Is the wavelength of the incident light; the high refractive index film preferably includes a zirconium dioxide film, a titanium dioxide film, a zinc sulfide film or a zinc selenide film, and the thickness of the high refractive index film is preferably λ0(ii)/4; the thickness of the high refractive index film is preferably the same as the thickness of the low refractive index film. The invention utilizes the different refractive indexes of different substances to play a role in increasing the reflectivity of the optical surface, improves the transmission of optical signals, finally increases the synthesized amplitude along with the increase of the film thickness, and can improve the detection sensitivity by designing the film thickness.
In a specific embodiment of the present invention, when the high-reflectivity film is a metal composite film, it is preferable to deposit a metal film by using a physical vapor deposition method and deposit a protection film by using an atomic layer deposition method;
when the high-reflection film is a multilayer dielectric reflection film, the high-reflection film is preferably deposited by a chemical vapor deposition method.
The invention also provides a scintillator array with a multilayer reflecting film, which is prepared by the preparation method in the technical scheme.
The scintillator array provided by the invention preferably comprises scintillator strips which are orderly arranged on the surface of a substrate, and the surfaces of the scintillator strips are coated with high-reflection films. In the present invention, the scintillator bar is preferably columnar. In the invention, the gap between two adjacent scintillator strips is preferably 0.1-100 μm, and more preferably 20 μm. In the invention, the material of the scintillator strip is preferably an inorganic nonmetal scintillator material or a scintillator material doped with quantum dots; the cross section area of the scintillator strip is preferably 50-400 mu m, and more preferably 80 mu m; the height of the scintillator strips is preferably 600-800 μm, more preferably 700 μm, and the heights of the scintillator strips are preferably all the same.
The invention also provides application of the scintillator array with the multilayer reflective film in the radiation detection field, and the scintillator array with the multilayer reflective film is preferably used in XCT imaging equipment or PET imaging equipment. The high-reflection film in the scintillator array with the multilayer reflection films, which is prepared by the invention, has higher reflectivity, can effectively reduce signal crosstalk among scintillators, thereby enhancing the transmission of optical signals, providing stronger optical signals for the optical sensor combined with the high-reflection film, further improving the spatial resolution, sensitivity and accuracy, and being particularly suitable for the small-size scintillator array.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Printing an inorganic non-metal scintillator material on a substrate by using an ink-jet printing method to obtain a scintillator array on the surface of the substrate, wherein the scintillator array consists of columnar scintillator strips which are orderly arranged; the distance between adjacent scintillator strips is 0.1-5 μm; the scintillator strip has a diameter of 59 μm and a height of 700 μm; the specific method of the ink-jet printing comprises the following steps: fixing the scintillator colloid ink on a substrate by an ink-jet printing method, determining the diameter of columnar scintillator strips by changing the diameter of ink drops formed on the substrate, and then changing the spacing and arrangement among the columnar scintillator strips to obtain a first layer of scintillator array; then, stacking and accumulating are carried out on the basis of the first layer of scintillator array, so that the height of the columnar scintillator strip is increased, and the scintillator array can be obtained by adjusting the number of stacked layers;
placing the substrate and the scintillator array on the surface of the substrate in a physical vapor deposition equipment cavity, and adjusting the pressure to 1.333 × 10-4Pa, adjusting the temperature to 70 ℃, depositing an aluminum film (with the thickness of 25nm) on the surface of the scintillator array, transferring the scintillator array plated with the aluminum film into an atomic layer deposition equipment cavity under the protection of nitrogen, and adjusting the pressure to 1.333 x 10- 4Pa, adjusting the temperature to 100 ℃, and uniformly plating an aluminum oxide protective film (with the thickness of 30nm) on the surface of the scintillator array plated with the aluminum film to obtain the scintillator array with the multilayer reflecting film.
The reflectivity of the high-reflection film (aluminum film and aluminum oxide protective film) obtained by the embodiment is up to 99.9%, and the signal crosstalk among the scintillator strips is effectively reduced, so that the transmission of optical signals is enhanced, stronger optical signals are provided for the optical sensor combined with the optical sensor, and the spatial resolution and the sensitivity are improved; the process for preparing the high-reflection film is stable, the consistency and uniformity of the film thickness can be ensured, and the accuracy of signals and the reliability of detection results are improved.
Example 2
Preparing a scintillator array in situ on a substrate by the same method as in example 1;
placing the substrate and the scintillator array on the surface of the substrate in a cavity of a chemical vapor deposition device, and adjusting the pressure to be 1.333 x 10-4Pa, setting the temperature at 220 ℃, taking zirconium dioxide as a high-refractive-index material, and depositing a zirconium dioxide film (with the film thickness of lambda) on the surface of the scintillator array0/4，λ0As incident light wavelength), silicon dioxide is used as high refractive index material, and silicon dioxide film (with film thickness of lambda) is deposited on the surface of the scintillator array plated with zirconium dioxide film0/4，λ0At the wavelength of the incident light), e.g.This alternation was repeated 15 times, ending with the deposition of a silicon dioxide film, to obtain a highly reflective film with a thickness of 30nm, to obtain a scintillator array with a multilayer reflective film. The reflectivity of the high-reflection film prepared by the embodiment is as high as 99.98%, and the signal crosstalk among the scintillator strips can be effectively reduced, so that the detection sensitivity, accuracy and reliability are improved.
According to the results of the embodiments 1-2, the invention can deposit the high-reflection film on the surface of the scintillator array prepared by ink-jet printing, so as to obtain the scintillator array with the multilayer reflection film, and the single scintillator strips do not need to be deposited one by one, thereby providing the film coating efficiency on the basis of effectively avoiding signal crosstalk among the scintillator strips, and simplifying the preparation process.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A method for preparing a scintillator array with a multilayer reflective film, comprising the steps of: depositing a high-reflection film on the surface of the scintillator array prepared in situ to obtain a scintillator array with a multilayer reflection film; the deposition method comprises one or more of an atomic layer deposition method, a physical vapor deposition method and a chemical vapor deposition method.
2. The method according to claim 1, wherein the atomic layer deposition pressure is 1.333 x 10 when depositing the high-reflective film by the atomic layer deposition method-4Pa, the temperature is 80-300 ℃;
when the high-reflection film is deposited by adopting a physical vapor deposition method, the pressure of the physical vapor deposition is 1.333 multiplied by 10-4PPa at 50-700 ℃;
when the chemical vapor deposition method is adopted to deposit the high-reflection film, the pressure of the chemical vapor deposition is 1.333X 10-4PPa, the temperature is 180-400 ℃.
3. The production method according to claim 1, wherein the thickness of the high-reflection film is 1nm to 100 μm.
4. The production method according to claim 1 or 3, wherein the high-reflection film comprises a metal composite film or a multilayer dielectric reflective film;
the metal composite film comprises a metal film and a protective film arranged on the outer surface of the metal film;
the multilayer dielectric reflection film comprises a high-refractive-index film and a low-refractive-index film which are alternately arranged in sequence, the high-refractive-index film is in contact with the surface of the scintillator array, and the low-refractive-index film is arranged on the outermost side.
5. The production method according to claim 4, wherein the metal film comprises an aluminum film, a silver film, or a gold film; the protective film comprises a silicon dioxide film, an aluminum oxide film, a magnesium oxide film or a lithium fluoride film;
the low refractive index film comprises a silicon dioxide film, a sodium hexafluoroaluminate film or a magnesium fluoride film; the high refractive index film includes a zirconium dioxide film, a titanium dioxide film, a zinc sulfide film, or a zinc selenide film.
6. A scintillator array having a multilayer reflective film, which is produced by the production method according to any one of claims 1 to 5.
7. Use of the scintillator array with multilayer reflective film of claim 6 in the field of radiation detection.
8. Use according to claim 7, wherein the scintillator array with the multilayer reflective film is used in an XCT imaging apparatus or a PET imaging apparatus.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883550A (en) * | 2020-08-10 | 2020-11-03 | 上海大学 | Flat panel detector |
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| US20040000644A1 (en) * | 2000-09-11 | 2004-01-01 | Takuya Homme | Scintillator panel, radiation image sensor and methods of producing them |
| CN101893717A (en) * | 2010-06-24 | 2010-11-24 | 江苏康众数字医疗设备有限公司 | Scintillator panel and scintillator composite board |
| CN102305937A (en) * | 2011-05-25 | 2012-01-04 | 上海奕瑞光电子科技有限公司 | Scintillator package structure |
| US20120267539A1 (en) * | 2009-12-18 | 2012-10-25 | Toshiba Electron Tubes & Devices Co., Ltd. | Radiation Detector and Method for Manufacturing Same |
| CN107290771A (en) * | 2017-07-28 | 2017-10-24 | 厦门中烁光电科技有限公司 | A kind of method for packing of scintillation crystal array and scintillation crystal array |
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- 2019-12-25 CN CN201911356229.8A patent/CN111123344A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040000644A1 (en) * | 2000-09-11 | 2004-01-01 | Takuya Homme | Scintillator panel, radiation image sensor and methods of producing them |
| US20120267539A1 (en) * | 2009-12-18 | 2012-10-25 | Toshiba Electron Tubes & Devices Co., Ltd. | Radiation Detector and Method for Manufacturing Same |
| CN101893717A (en) * | 2010-06-24 | 2010-11-24 | 江苏康众数字医疗设备有限公司 | Scintillator panel and scintillator composite board |
| CN102305937A (en) * | 2011-05-25 | 2012-01-04 | 上海奕瑞光电子科技有限公司 | Scintillator package structure |
| CN107290771A (en) * | 2017-07-28 | 2017-10-24 | 厦门中烁光电科技有限公司 | A kind of method for packing of scintillation crystal array and scintillation crystal array |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111883550A (en) * | 2020-08-10 | 2020-11-03 | 上海大学 | Flat panel detector |
| CN111883550B (en) * | 2020-08-10 | 2022-07-01 | 上海大学 | Flat panel detector |
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