CN111116201B - Preparation method of GeS-based thermoelectric material - Google Patents

Preparation method of GeS-based thermoelectric material Download PDF

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CN111116201B
CN111116201B CN202010015676.3A CN202010015676A CN111116201B CN 111116201 B CN111116201 B CN 111116201B CN 202010015676 A CN202010015676 A CN 202010015676A CN 111116201 B CN111116201 B CN 111116201B
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张波萍
赵昭
张瑞
吴茵
石建磊
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University of Science and Technology Beijing USTB
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Abstract

A preparation method of a GeS-based thermoelectric material belongs to the technical field of energy materials. The invention is prepared by adopting a solid phase reaction method (SSR) and a Spark Plasma (SPS) sintering process, takes Ge powder, S powder and a doping element A as raw materials, wherein A is Se or Te and is prepared according to a chemical general formula GeS1‑xAx(x is more than or equal to 0 and less than or equal to 0.05), preparing precursor powder with uniform components by using low-temperature solid phase reaction, and preparing the polycrystalline GeS-based thermoelectric material block by combining a Spark Plasma (SPS) sintering process. The power factor of the polycrystalline GeS thermoelectric material prepared by the invention along the direction vertical to SPS pressure is 0.02-4 μ Wm‑ 1K‑2The thermal conductivity is 1.3-2.5Wm‑1K‑1. The power factor parallel to the SPS pressure direction is 0.01-2 μ Wm‑1K‑2The thermal conductivity is 0.5-1.5Wm‑1K‑1. The polycrystalline GeS block thermoelectric material prepared by combining the solid-phase reaction method with the SPS method has the characteristics of simple process, convenience and easiness in operation, low requirements on equipment and preparation environment, low sintering temperature and the like. The prepared polycrystalline GeS thermoelectric material can be widely applied in the fields of thermoelectric power generation, thermoelectric refrigeration and the like.

Description

Preparation method of GeS-based thermoelectric material
Technical Field
The invention belongs to the technical field of energy materials, and particularly relates to a preparation method of a GeS-based thermoelectric material.
Background
The thermoelectric material can realize the interconversion of heat energy and electric energy through the Seebeck effect and the Peltier effect, and realize thermoelectric power generation and thermoelectric refrigeration. The thermoelectric device composed of the N-type thermoelectric material and the P-type thermoelectric material has the advantages of small volume, no noise, no moving parts, no pollution, high reliability, long service life and the like, and has wide application prospect in the fields of industrial waste heat utilization, fluorine-free refrigeration, aerospace, high-performance receivers, sensors and the like. The thermoelectric property of the material can be measured by a dimensionless thermoelectric figure of merit ZT ═ alpha2σ T/κ, where α is Seebeck coefficient and σ is conductivityT is absolute temperature, k is thermal conductivity, alpha2σ is defined as the power factor of the material, and high performance thermoelectric materials require high α, σ, and low κ.
Single crystal SnSe composed of IV-VI group elements is a material with the highest ZT value obtained at present, and people pay attention to the material composed of IV-VI group elements such as GeTe and GePb at present, but new substitute elements are urgently needed to be found due to the toxic and low abundance reasons of Te, Pb and the like. The sulfur element has low price and abundant reserves, and is a good substitute for Pb and Te. The current research on GeS mainly focuses on the first principle calculation aspect, and the experimental aspect is rarely reported. The researchers calculate the thermoelectric property of GeS through a first principle under the condition that the GeS carrier concentration and the SnSe are equal, and the result shows that the ZT value exceeds 1 when 800K. Because the high-temperature vapor pressure of sulfur element is very large, the improper operation can cause the results of quartz tube explosion, uneven distribution of sample elements, deviation from stoichiometric ratio and the like. The work firstly synthesizes polycrystalline GeS at a lower temperature by utilizing a solid phase reaction method, and the polycrystalline GeS is heated to a temperature higher than the melting point of a GeS material for homogenization. And the block GeS thermoelectric material with a compact structure is prepared by combining with the SPS sintering process, and the preparation process is simple.
So far, no report is found for preparing a polycrystalline GeS block thermoelectric material with good crystallinity and compact structure at 480-600 ℃ by utilizing a solid phase reaction method to synthesize a polycrystalline GeS block in advance and combining the SPS sintering process disclosed by the invention.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a GeS-based thermoelectric material, which takes Ge powder, S powder and a doping element A (Se or Te) as raw materials, firstly prepares a polycrystalline GeS-based precursor material by a solid-phase reaction method, and then prepares a block GeS-based thermoelectric material at 480-600 ℃ by combining with an SPS sintering process, thereby improving the thermoelectric property of the GeS-based thermoelectric material.
The invention is realized by the following technical scheme:
a preparation method of a GeS-based thermoelectric material is characterized in that elemental Ge powder, S powder and doped element A are used as raw materials, wherein A is Se or Te, and the elemental Ge is used as the raw materialThe molar weight of the powder, the S powder and the doping element A powder is according to the chemical general formula GeS1-xAxPreparing, sealing in a vacuum quartz tube, preparing a polycrystalline GeS-based precursor block through solid-phase reaction, grinding to 75-100 mu m by using an agate mortar, filling the ground GeS-based powder into an SPS (semi-solid solution) mold, and sintering by using SPS to prepare the polycrystalline GeS-based bulk thermoelectric material with good performance and compact structure.
Further, the preparation method specifically comprises the following steps:
(1) solid-phase reaction: ge powder with the purity of more than 99.99 percent, S powder and doping element A are taken as raw materials, wherein A is Se or Te according to GeS1-xAxThe polycrystalline GeS-based precursor block is prepared by weighing and proportioning the components according to the stoichiometric ratio, uniformly mixing the components in a mortar, putting the mixture into a quartz tube, vacuumizing the quartz tube, sealing the quartz tube, and carrying out solid phase reaction to obtain a polycrystalline GeS-based precursor block;
(2) and (3) SPS sintering process: and (2) grinding the polycrystalline GeS-based precursor block obtained in the step (1) to 75-150 mu m by using a mortar, putting the block into an SPS graphite mold, and preserving heat for 5-10min under the conditions of axial pressure of 40-60MPa and 480-600 ℃ to obtain the polycrystalline GeS block thermoelectric material.
Further, the solid phase reaction conditions are as follows: heating to 400-500 ℃ at the speed of 5-20 ℃/min, and keeping the temperature for 50-100 h. Then heating to 700-800 ℃ at the speed of 5-20 ℃/min, preserving the heat for 5-10h, and then cooling to room temperature.
Furthermore, the quartz tube used for the solid phase reaction is a pointed bottom or a flat bottom, the wall thickness is more than 1.5mm, or a double-layer quartz tube is used for protection.
Further, the vacuum degree is kept at 10 in the process of vacuum sealing the quartz tube in the step (1)-1～10-4Pa。
The polycrystalline GeS-based precursor block obtained by the preparation method has good crystallinity, compact structure, high purity and no impurity second phase, and has a power factor of 0.02-4 μ Wm along the pressure direction vertical to SPS sintering-1K-2The thermal conductivity is 1.3-2.5Wm-1K-1. The power factor in the pressure direction of the parallel SPS sintering is 0.01-2 μ Wm-1K-2The thermal conductivity is 0.5-1.5Wm-1K-1。
The invention has the beneficial technical effects that:
the polycrystalline GeS block thermoelectric material is prepared by combining a solid phase reaction method with an SPS sintering process, and has three obvious advantages: firstly, a new thermoelectric material is prepared; secondly, the GeS material is synthesized by a solid-phase reaction mode at a lower temperature, so that the dangerous situation of quartz tube explosion caused by a larger sulfur vapor pressure at a high temperature is avoided; thirdly, preparing the GeS block thermoelectric material with good crystallinity, uniform components and compact structure by the SPS sintering process.
Drawings
FIG. 1: the cross-sectional view of the sample of the solid-phase reaction GeS-based block obtained in the example 1 in the table II shows that the polycrystalline GeS prepared by the method has good appearance and uniform color;
FIG. 2: the X-ray diffraction pattern of the GeS precursor powder obtained in the example 1 in the second table shows that the prepared single crystal is pure phase, is well matched with a pure GeS standard card (PDF #26-0692), and grows in a preferred orientation along the (400) direction;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the following description is given for further illustration of the preparation method and practical effects of the present invention with reference to specific examples and drawings. It should be understood that the examples used herein are for illustrative purposes only and are not intended to limit the scope of the present invention.
The invention is intended to cover alternatives, modifications, equivalents and alternatives which may be included within the spirit and scope of the invention as defined by the appended claims. Furthermore, in the following detailed description of the present invention, certain specific details are set forth in order to provide a better understanding of the present invention. It will be apparent to one skilled in the art that the present invention may be practiced without these specific details.
A preparation method of a GeS-based thermoelectric material specifically comprises the following steps:
(1) solid-phase reaction: taking Ge powder with the purity of more than 99.99%, S powder and doping element A as raw materials, wherein A is Se or Te, weighing and proportioning according to the stoichiometric ratio of GeS1-xAx, uniformly mixing in a mortar, filling in a quartz tube, vacuumizing, sealing the tube, and carrying out solid phase reaction to obtain a polycrystalline GeS-based precursor block;
the solid-phase reaction conditions are as follows: heating to 400-500 ℃ at the speed of 5-20 ℃/min, and preserving the heat for 50-100 h. Then heating to 700-800 ℃ at the speed of 5-20 ℃/min, preserving the heat for 5-10h, and then cooling to room temperature.
(2) And (3) SPS sintering process: and (2) grinding the polycrystalline GeS-based precursor block obtained in the step (1) to 75-150 mu m by using a mortar, putting the block into an SPS graphite mold, and preserving heat for 5-10min under the conditions of axial pressure of 40-60MPa and 480-600 ℃ to obtain the polycrystalline GeS block thermoelectric material.
The quartz tube is pointed or flat and the wall thickness is more than 1.5mm or a double-layer quartz tube is used for protection.
The vacuum degree is kept to 10 in the vacuum sealing process of the quartz tube-1～10-4Pa。
Table one is a few examples of solid phase reaction synthesis of Ge bulk powder:
examples 1 2 3 4 5 6 7 8
Degree of vacuum (Pa) 10-1 10-1 10-4 10-4 10-2 10-2 10-3 10-3
Rate of temperature rise (. degree. C./h) 10 10 15 10 20 20 5 5
Synthesis temperature (. degree.C.) 500 450 450 500 500 400 400 400
Incubation time (h) 50 70 100 80 60 50 80 90
Melting temperature (. degree.C.) 700 700 750 750 800 800 750 750
Table two is a few examples of the SPS sintering process for preparing the GeS-based thermoelectric material:
examples 1 2 3 4 5 6 7 8
Pressure intensity (MPa) 40 50 60 50 60 40 50 60
Sintering temperature (. degree. C.) 480 480 480 550 600 520 540 580
Incubation time (min) 4 8 10 5 7 6 8 10
Analytical testing of the polycrystalline GeS block obtained in table two example 1 from the X-ray diffraction pattern (fig. 2), it can be seen that the polycrystalline GeS thermoelectric material prepared according to the present invention is a pure phase, well matched with standard card (PDF #26-0692), and grows with a preferred orientation in the (400) direction. The high-temperature performance parameters show that the polycrystalline GeS prepared by the invention has higher thermoelectric performance and is likely to be widely applied in the fields of thermoelectric power generation, thermoelectric refrigeration and the like.
Table III shows that the parallel SPS pressure direction power factor of the polycrystalline GeS block body is 1.96 mu Wm-1K-2Perpendicular SPS pressure Direction Power factor of 3.77 μ Wm-1K-2And has high thermoelectric performance. Table three shows the high temperature performance parameters of the polycrystalline GeS block obtained in example 1,
Figure BDA0002358781210000051

Claims (4)

1. the preparation method of the GeS-based thermoelectric material is characterized in that elemental Ge powder, S powder and doping element A are used as raw materials, wherein A is Se or Te, and the molar weight of the elemental Ge powder, the S powder and the doping element A powder is according to a chemical general formula GeS1-xAxPreparing, sealing in a vacuum quartz tube, preparing a polycrystalline GeS-based precursor block through solid-phase reaction, grinding to 75-100 mu m by using an agate mortar, then filling the ground GeS-based powder into an SPS (semi-solid solution) mold, and preparing the polycrystalline GeS-based precursor block thermoelectric material with good performance and compact structure through SPS sintering;
the preparation method specifically comprises the following steps:
(1) solid-phase reaction: ge powder with the purity of more than 99.99 percent, S powder and doping element A are taken as raw materials according to GeS1-xAxThe materials are weighed according to the stoichiometric ratio, uniformly mixed in an agate mortar, filled into a quartz tube, vacuumized, sealed and subjected to solid phase reaction to obtain a polycrystalline GeS-based precursor block;
(2) and (3) SPS sintering process: grinding the polycrystalline GeS base block obtained in the step (1) to 75-150 mu m by using a mortar, putting the ground polycrystalline GeS base block into an SPS graphite mold, and preserving heat for 5-10min under the conditions of axial pressure of 40-60MPa and 480-600 ℃ to obtain a compact polycrystalline GeS base block thermoelectric material;
the solid-phase reaction process comprises the following steps: heating to 400-500 ℃ at the speed of 5-20 ℃/min, preserving the heat for 50-100h, heating to 700-800 ℃ at the speed of 5-20 ℃/min, preserving the heat for 5-10h, and then cooling to room temperature.
2. The method according to claim 1, wherein the quartz tube is a sharp-bottomed or flat-bottomed quartz tube having a wall thickness of 1.5mm or more, or a double-walled quartz tube is used for protection.
3. The method for preparing a GeS-based thermoelectric material according to claim 1, wherein the degree of vacuum maintained in the process of vacuum sealing the quartz tube is 10-1~10-4Pa。
4. The method according to claim 1, wherein the obtained polycrystalline GeS-based precursor block has good crystallinity, compact structure, high purity, and no impurity second phase, and has a power factor of 0.02-4 μ Wm in the pressure direction perpendicular to SPS sintering-1K-2The thermal conductivity is 1.3-2.5Wm-1K-1(ii) a The power factor of the pressure direction of the parallel SPS sintering is 0.01-2 mu Wm-1K-2The thermal conductivity is 0.5-1.5Wm-1K-1。
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