CN111105994A - Method for preparing AlN epitaxial layer - Google Patents
Method for preparing AlN epitaxial layer Download PDFInfo
- Publication number
- CN111105994A CN111105994A CN201911303568.XA CN201911303568A CN111105994A CN 111105994 A CN111105994 A CN 111105994A CN 201911303568 A CN201911303568 A CN 201911303568A CN 111105994 A CN111105994 A CN 111105994A
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- aln
- reaction
- cavity
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
Abstract
The invention provides a method for preparing an AlN epitaxial layer, which relates to the technical field of semiconductors. Compared with the prior art, the method adopts the double-covering-layer technology, and provides a stable chamber condition for the AlN epitaxial growth by depositing the GaN and the AlN on the cavity cover of the reaction cavity, so that the large-scale stable preparation of the AlN epitaxial layer can be realized, and the production and research and development efficiency can be greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for preparing an AlN epitaxial layer.
Background
The AlGaN-based material has the advantages of continuously adjustable direct band gap, high electron mobility, strong breakdown electric field, strong radiation resistance, high temperature resistance and the like, and has wide application prospect in ultraviolet/deep ultraviolet electronic devices, power electronic devices and radio frequency electronic devices. Due to the lack of commercially homogeneous substrates of large dimensions, the currently most desirable solution is to use an epitaxial layer of aluminum nitride grown on a foreign substrate (e.g., sapphire, silicon carbide substrate, silicon substrate, etc.) as a template. The epitaxial layer and the substrate have large lattice mismatch and thermal mismatch, so the epitaxial layer is generally prepared by a two-step or multi-step growth technology, i.e. a growth technology of a nucleation layer (buffer layer) and a high-temperature layer. Because the surface migration capability of aluminum atoms is weak, the pre-reaction between reactants is serious and the like, the fault tolerance rate of the epitaxial growth of the aluminum nitride is low, and the environmental requirement is high. The environmental control of the reaction chamber during the initial nucleation phase is particularly important. Poor control of the nucleation stage can lead to extreme deterioration and irreparable deterioration of the crystalline quality of the entire aluminum nitride epitaxial layer. The currently prepared aluminum nitride epitaxial layer is always suffered from the problem of stability, and the large-scale industrialization and application of the aluminum nitride epitaxial layer are severely restricted.
Because the aluminum nitride has strong adhesive force and high growth temperature, the direct aluminum nitride epitaxial growth easily causes the aluminum nitride film to be attached to the reaction cavity cover and cannot be removed through the brush. However, when the number of growth heats increases, the aluminum nitride attached to the reaction chamber cover becomes thicker and thicker, and the aluminum nitride easily falls off in the growth process, which seriously affects the crystallization quality and the production yield. The currently adopted common method is that every time a plurality of furnaces are grown, after the aluminum nitride film on the reaction cavity cover is accumulated to a certain thickness, the aluminum nitride film is cleaned by a scraper. The adoption of the scraper for cleaning is easy to form floating ash, and usually needs to carry out multiple times of blowing and the recovery of the reaction cavity environment by a growth sacrificial furnace, thus seriously affecting the production and research and development efficiency.
In view of the above, it is important to design a method for preparing an aluminum nitride epitaxial layer that can solve the above problems.
Disclosure of Invention
The invention aims to provide a method for preparing an AlN epitaxial layer, which can provide a stable environment for the growth of the AlN epitaxial layer, prevent AlN deposited on a reaction cavity cover from influencing the environment of the reaction cavity, simultaneously avoid floating ash when cleaning the reaction cavity, recover the environment of the reaction cavity without means such as purging and the like, and has simple cleaning steps, thereby greatly improving the production and research and development efficiency.
The invention is realized by adopting the following technical scheme.
A method of making an AlN epitaxial layer, comprising:
depositing a GaN covering layer on the cavity cover of the reaction cavity;
depositing an AlN capping layer on the GaN capping layer so that the AlN capping layer covers the GaN capping layer;
and putting a substrate into the reaction cavity and enabling the substrate to carry out AlN epitaxial growth.
Further, before the step of depositing the GaN cladding layer on the cavity cover of the reaction cavity, the method also comprises the following steps:
baking the reaction cavity;
and removing the GaN, AlN, AlGaN, Ga particles and Al particles remained in the reaction cavity.
Further, before the step of baking the reaction chamber, the method further comprises the following steps:
and cleaning a cavity cover of the reaction cavity.
Further, the step of removing Ga particles and Al particles in the reaction chamber includes:
h2 is introduced into the reaction cavity to remove the residual GaN, AlN and AlGaN in the reaction cavity;
and introducing NH3 into the reaction chamber to remove Ga particles and Al particles in the reaction chamber.
Further, the step of baking the reaction chamber includes:
and raising the temperature of the reaction cavity to 1000-1300 ℃, and baking the reaction cavity.
Further, the step of depositing a GaN cap layer on the chamber cover of the reaction chamber comprises:
maintaining the temperature of the reaction chamber at 1000-1300 ℃;
and introducing NH3 and TMGa or NH3 and TEGa into the reaction cavity to deposit the GaN covering layer on the cavity cover of the reaction cavity.
Further, NH3 and TMGa are introduced into the reaction cavity, or NH3 and TEGa are introduced for 30-900 s.
Further, the step of depositing an AlN cap layer on the chamber cover of the reaction chamber includes:
maintaining the temperature of the reaction chamber at 1000-1500 ℃;
and introducing NH3 and TMAl or NH3 and TEAl into the reaction cavity to deposit the AlN covering layer on the cavity cover of the reaction cavity.
Further, NH3 and TMAl are introduced into the reaction cavity, or NH3 and TEAL are introduced for 30-1200 s.
Further, the step of placing a substrate into the reaction chamber and subjecting the substrate to AlN epitaxial growth includes:
reducing the temperature of the reaction chamber to the ambient temperature, and placing the substrate;
raising the temperature of the reaction chamber to 1000-1200 ℃, baking and cleaning the surface of the substrate;
reducing the temperature of the reaction cavity to 600-1000 ℃, and growing a nucleating layer;
and raising the temperature of the reaction chamber to 1030-1500 ℃ to grow the AlN epitaxial layer.
The invention has the following beneficial effects:
according to the method for preparing the epitaxial layer, the GaN covering layer is deposited on the cavity cover of the reaction cavity before AlN epitaxial growth is carried out, the AlN covering layer is deposited on the GaN covering layer, the GaN can be easily removed from the cavity cover of the reaction cavity through the hairbrush due to the weak adhesive force of the GaN covering layer, and the GaN can be cleaned through the common reaction cavity after each furnace is subjected to epitaxial growth, so that the method is very convenient, and meanwhile, the GaN covering layer can be prevented from being decomposed in the high-temperature growth process by covering one AlN layer, so that impurities can enter the AlN epitaxial layer. Compared with the prior art, the invention provides the method for preparing the epitaxial layer, the double-covering-layer technology is adopted, and the GaN and the AlN are deposited on the cavity cover of the reaction cavity, so that stable cavity conditions are provided for the AlN epitaxial growth, the large-scale stable preparation of the AlN epitaxial layer can be realized, and the production and research and development efficiency can be greatly improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a block diagram of the steps of the method for preparing an AlN epitaxial layer according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships conventionally put on the products of the present invention when used, and are only used for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "connected," "mounted," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As mentioned in the background art, the aluminum nitride has strong self-adhesion and high growth temperature, so that the aluminum nitride epitaxial growth is directly carried out, the aluminum nitride film is easily adhered to the cavity cover of the reaction cavity, and the aluminum nitride film is firmly adhered to the cavity cover of the reaction cavity and is difficult to remove. If the aluminum nitride film is left as it is, the aluminum nitride film is thickened as the number of reaction times increases, and the aluminum nitride film is likely to fall off when the aluminum nitride is epitaxially grown on the substrate and fall on the substrate, which seriously affects the crystal quality. In the prior art, after a few furnaces grow, the aluminum nitride film is forcibly scraped off from a cavity cover of a reaction cavity by a scraper, floating ash is easily formed by adopting the scraper for cleaning, multiple times of blowing and growth of a sacrificial furnace are needed for recovering the environment of the reaction cavity, and the production and research and development efficiency is seriously influenced. The inventors have found that, compared with aluminum nitride, gallium nitride has a weaker adhesive force, can be directly removed by a brush, is not easy to generate floating ash, and is easy to decompose during high-temperature growth, so that an additional protective layer is required to protect gallium nitride. The invention provides a novel preparation method of an aluminum nitride epitaxial layer, which is characterized in that a gallium nitride covering layer with weak adhesive force is deposited on a cavity cover of a reaction cavity, so that the removal is convenient, then the aluminum nitride covering layer is deposited on the gallium nitride covering layer, the decomposition of gallium nitride is avoided, a stable environment can be provided for the growth of the aluminum nitride epitaxial layer, and the production and research and development efficiency can be greatly improved.
Some embodiments of the invention are described in detail below with reference to the accompanying drawings. Features in the embodiments described below may be combined with each other without conflict.
First embodiment
Referring to fig. 1, the embodiment provides a method for preparing an aluminum nitride (AlN) epitaxial layer, which can provide a stable environment for the growth of the aluminum nitride epitaxial layer, avoid cleaning the chamber cover of the reaction chamber with a scraper, avoid the generation of floating ash, recover the environment of the reaction chamber without purging or other means, and have a simple cleaning step, thereby greatly improving the production and research and development efficiency.
The method for preparing the aluminum nitride epitaxial layer provided by the embodiment comprises the following steps:
s1: and cleaning a cavity cover of the reaction cavity.
Particularly, utilize the brush to cover the chamber clean up of reaction chamber before every stove grows, because the gallium nitride adhesive force is lower, can brush down gallium nitride (GaN) overburden and aluminium nitride (AlN) overburden on the reaction chamber cover when last stove grows through the brush together to accomplish the cleanness of reaction chamber, can not produce the ash that floats in the clean process, simple and convenient has promoted production efficiency greatly.
S2: and baking the reaction cavity.
Specifically, the temperature of the reaction chamber is raised to 1000 ℃ to 1300 ℃, so that the reaction chamber is baked. The temperature control system of the reaction furnace is the same as that of a conventional reaction furnace, and is not specifically described.
S3: and removing the GaN, AlN and AlGaN remained in the reaction cavity and removing Ga particles and Al particles.
Specifically, hydrogen (H) gas is introduced into the reaction chamber2) To remove impurity particles such as gallium nitride (GaN), aluminum nitride (AlN), and aluminum gallium nitride (AlGaN) in the reaction chamber, and simultaneously introducing ammonia gas (NH) into the reaction chamber3) To remove gallium (Ga) particles and aluminum (Al) particles from the reaction chamber. Specifically, the carrier gas adopts hydrogen to remove impurities such as gallium nitride, aluminum gallium nitride and the like remained in the reaction chamber, and then ammonia (NH) is additionally introduced3) And removing gallium (Ga) particles and aluminum (Al) particles in the reaction chamber for 5-30 min.
It should be noted that, the method for removing the residual impurity particles in the reaction chamber may also be clear in other manners, for example, after introducing other active gases that react with gallium and aluminum, the replacement gas is passed, and the like, and is not limited to the embodiment.
S4: and depositing a GaN covering layer on the cavity cover of the reaction cavity.
Specifically, after the baking step, the temperature of the reaction chamber is maintained at 1000-1300 ℃, ammonia gas and TMGa or ammonia gas and TEGa are introduced into the reaction chamber, so as to deposit the gallium nitride covering layer on the chamber cover of the reaction chamber.
In this embodiment, ammonia gas and TMGa are preferably introduced into the reaction chamber for 30-900s, so that the gan cap layer can completely cover the surface of the chamber cover of the reaction chamber.
Note that TMGa (trimethyl gallium) and TEGa (triethyl gallium) are different Ga sources in this example, and are used for growing the GaN cap layer.
S5: an AlN cap layer was deposited on the GaN cap layer.
Specifically, after the gallium nitride covering layer is deposited, the aluminum nitride covering layer is deposited on the gallium nitride covering layer, so that the aluminum nitride covering layer covers the gallium nitride covering layer, and the gallium nitride covering layer is prevented from being decomposed in the high-temperature growth process to influence the growth of an aluminum nitride epitaxial layer on the substrate. The specific operation steps are as follows: after the gallium nitride covering layer is deposited, the temperature of the reaction cavity is continuously maintained at 1000-1500 ℃, ammonia gas and TMAl or ammonia gas and TEAL are introduced into the reaction cavity, and the aluminum nitride covering layer is deposited on the cavity cover of the reaction cavity.
In this embodiment, ammonia gas and TMAl are preferably introduced into the reaction chamber for 30-1200s, so that the aluminum nitride covering layer can completely cover the gallium nitride covering layer, thereby protecting the gallium nitride covering layer.
Note that TMAl (trimethylaluminum) and TEGa (triethylaluminum) are different Al sources for growing the AlN cap layer in this example.
S6: a substrate is placed into the reaction chamber and subjected to AlN epitaxial growth.
Specifically, after the step of depositing the aluminum nitride cap layer, the temperature of the reaction chamber is lowered to ambient temperature, and a substrate for epitaxial growth, such as sapphire, a silicon carbide substrate, a silicon substrate, etc., is placed into the reaction chamber, and then a gallium nitride epitaxial growth process is performed. The gan epitaxial growth process may include all gan epitaxial growth processes, which are consistent with conventional gan epitaxial growth processes, and are illustrated but not limited in this embodiment.
In this embodiment, the step of performing aluminum nitride epitaxial growth on the substrate is: raising the temperature of the reaction chamber to 1000-1200 ℃, baking and cleaning the surface of the substrate; reducing the temperature of the reaction cavity to 600-1000 ℃, and growing a nucleating layer; and raising the temperature of the reaction chamber to 1030-1500 ℃ to grow the aluminum nitride epitaxial layer. Specifically, the thickness of the low-temperature nucleating layer is 10-50nm, and the thickness of the high-temperature aluminum nitride epitaxial layer is 1-5 μm. Of course, the thicknesses herein are merely illustrative and not limiting.
It should be noted that the growth equipment used in the present invention includes Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Molecular Beam Epitaxy (MBE) equipment, and the like.
In summary, in the method for preparing an aluminum nitride epitaxial layer according to this embodiment, before performing an aluminum nitride epitaxial growth, a gallium nitride capping layer is deposited on a cavity cover of a reaction chamber, and an aluminum nitride capping layer is deposited on the gallium nitride capping layer.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method of producing an AlN epitaxial layer, comprising:
depositing a GaN covering layer on the cavity cover of the reaction cavity;
depositing an AlN capping layer on the GaN capping layer so that the AlN capping layer covers the GaN capping layer;
and putting a substrate into the reaction cavity and enabling the substrate to carry out AlN epitaxial growth.
2. The method of producing an AlN epitaxial layer according to claim 1, further comprising, before the step of depositing a GaN cap layer on the chamber lid of the reaction chamber, the steps of:
baking the reaction cavity;
and removing GaN, AlN, AlGaN, Ga particles and Al particles in the reaction cavity.
3. The method of producing an AlN epitaxial layer according to claim 2, further comprising, before the step of baking the reaction chamber, the steps of:
and cleaning a cavity cover of the reaction cavity.
4. The method of preparing an AlN epitaxial layer according to claim 2, wherein the step of removing Ga particles and Al particles in the reaction chamber includes:
introducing H into the reaction cavity2To remove GaN, AlN and AlGaN in the reaction chamber;
introducing NH into the reaction cavity3To remove Ga particles and Al particles in the reaction chamber.
5. The method of producing an AlN epitaxial layer according to claim 2, wherein the step of baking the reaction chamber includes:
and raising the temperature of the reaction cavity to 1000-1300 ℃, and baking the reaction cavity.
6. The method of producing an AlN epitaxial layer according to claim 1, wherein the step of depositing a GaN cap layer on the chamber lid of the reaction chamber includes:
maintaining the temperature of the reaction chamber at 1000-1300 ℃;
introducing NH into the reaction cavity3And TMGa, or NH3And TEGa to deposit the GaN cladding layer on the chamber cover of the reaction chamber.
7. The method of claim 6, wherein NH is introduced into the reaction chamber3And TMGa, or NH3And the passing time of TEGa is 30-900 s.
8. The method of preparing an AlN epitaxial layer according to claim 1, wherein the step of depositing an AlN cap layer on a chamber lid of the reaction chamber includes:
maintaining the temperature of the reaction chamber at 1000-1500 ℃;
introducing NH into the reaction cavity3And TMAl, or NH3And TEAL to deposit the AlN cladding layer on the cavity cover of the reaction cavity.
9. The method of claim 1, wherein NH is introduced into the reaction chamber3And TMAl, or NH3And the passage time of TEAL is 30-1200 s.
10. The method of preparing an AlN epitaxial layer according to claim 1, wherein the placing a substrate into the reaction chamber and subjecting the substrate to an AlN epitaxial growth step includes:
reducing the temperature of the reaction chamber to the ambient temperature, and placing the substrate;
raising the temperature of the reaction chamber to 1000-1200 ℃, baking and cleaning the surface of the substrate;
reducing the temperature of the reaction cavity to 600-1000 ℃, and growing a nucleating layer;
and raising the temperature of the reaction chamber to 1030-1500 ℃ to grow the AlN epitaxial layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911303568.XA CN111105994B (en) | 2019-12-17 | 2019-12-17 | Method for preparing AlN epitaxial layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911303568.XA CN111105994B (en) | 2019-12-17 | 2019-12-17 | Method for preparing AlN epitaxial layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111105994A true CN111105994A (en) | 2020-05-05 |
| CN111105994B CN111105994B (en) | 2023-01-17 |
Family
ID=70422612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911303568.XA Active CN111105994B (en) | 2019-12-17 | 2019-12-17 | Method for preparing AlN epitaxial layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111105994B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113936995A (en) * | 2021-12-17 | 2022-01-14 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665918A (en) * | 2008-09-05 | 2010-03-10 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| US20110073136A1 (en) * | 2009-09-10 | 2011-03-31 | Matheson Tri-Gas, Inc. | Removal of gallium and gallium containing materials |
| CN102386067A (en) * | 2010-08-31 | 2012-03-21 | 中国科学院上海微***与信息技术研究所 | Epitaxial growth method for effectively restraining self-doping effect |
| CN103290387A (en) * | 2012-02-23 | 2013-09-11 | 艾克斯特朗欧洲公司 | Method for cleaning process chamber of chemical vapor deposition reactor |
| CN104120405A (en) * | 2013-04-26 | 2014-10-29 | 东京毅力科创株式会社 | Method of cleaning film forming apparatus and film forming apparatus |
| CN105006502A (en) * | 2014-04-25 | 2015-10-28 | 三星电子株式会社 | Method of manufacturing semiconductor device and method of maintaining deposition apparatus |
| CN105986245A (en) * | 2015-02-16 | 2016-10-05 | 中微半导体设备(上海)有限公司 | Part and method for improving MOCVD reaction process |
| US20180247800A1 (en) * | 2017-02-28 | 2018-08-30 | International Business Machines Corporation | Gallium implantation cleaning method |
| CN109385621A (en) * | 2018-11-26 | 2019-02-26 | 合肥彩虹蓝光科技有限公司 | A kind of clean method of the reaction cavity of metal-organic chemical vapor deposition equipment |
-
2019
- 2019-12-17 CN CN201911303568.XA patent/CN111105994B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665918A (en) * | 2008-09-05 | 2010-03-10 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| US20110073136A1 (en) * | 2009-09-10 | 2011-03-31 | Matheson Tri-Gas, Inc. | Removal of gallium and gallium containing materials |
| CN102386067A (en) * | 2010-08-31 | 2012-03-21 | 中国科学院上海微***与信息技术研究所 | Epitaxial growth method for effectively restraining self-doping effect |
| CN103290387A (en) * | 2012-02-23 | 2013-09-11 | 艾克斯特朗欧洲公司 | Method for cleaning process chamber of chemical vapor deposition reactor |
| CN104120405A (en) * | 2013-04-26 | 2014-10-29 | 东京毅力科创株式会社 | Method of cleaning film forming apparatus and film forming apparatus |
| CN105006502A (en) * | 2014-04-25 | 2015-10-28 | 三星电子株式会社 | Method of manufacturing semiconductor device and method of maintaining deposition apparatus |
| CN105986245A (en) * | 2015-02-16 | 2016-10-05 | 中微半导体设备(上海)有限公司 | Part and method for improving MOCVD reaction process |
| US20180247800A1 (en) * | 2017-02-28 | 2018-08-30 | International Business Machines Corporation | Gallium implantation cleaning method |
| CN109385621A (en) * | 2018-11-26 | 2019-02-26 | 合肥彩虹蓝光科技有限公司 | A kind of clean method of the reaction cavity of metal-organic chemical vapor deposition equipment |
Non-Patent Citations (1)
| Title |
|---|
| 汪莱 等: "《AlN/蓝宝石模板上生长的GaN研究》", 《物理学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113936995A (en) * | 2021-12-17 | 2022-01-14 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
| CN113936995B (en) * | 2021-12-17 | 2022-03-04 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111105994B (en) | 2023-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5135501B2 (en) | Manufacturing method of nitride single crystal substrate and manufacturing method of nitride semiconductor light emitting device using the same | |
| CN113235047B (en) | Preparation method of AlN thin film | |
| KR20020076167A (en) | Process for produing gallium nitride crystal substrate, and gallium nitride crystal substrate | |
| JPH0831419B2 (en) | Method for producing compound semiconductor single crystal on single crystal silicon substrate | |
| Ho et al. | MOVPE of AlN and GaN by using novel precursors | |
| CN110219050B (en) | Preparation method of aluminum nitride single crystal film | |
| CN108428618B (en) | Gallium nitride growth method based on graphene insertion layer structure | |
| CN111105994B (en) | Method for preparing AlN epitaxial layer | |
| KR100331447B1 (en) | Method for fabricating a thick GaN film | |
| JP4664464B2 (en) | Silicon carbide single crystal wafer with small mosaic | |
| JPH1126383A (en) | Crystal growth method of nitride semiconductor | |
| US20070037306A1 (en) | Method for manufacturing a semiconductor device | |
| KR100533636B1 (en) | Fabrication method of nitride semiconductor and nitride semiconductor structure fabricated thereby | |
| CN100451181C (en) | Method for carrying out epitaxial growth of single crystal film of nitride by using mask in situ | |
| KR100763467B1 (en) | Manufacturing method of single crystal gallium nitride substrate | |
| CN100373548C (en) | Method for generating nopolar GaN thick film on lithium aluminate chip | |
| CN105762061A (en) | Nitride epitaxial growth method | |
| CN110983436B (en) | Reaction chamber pretreatment method and preparation method of aluminum nitride epitaxial layer | |
| CN116169222A (en) | AlN template and preparation method thereof | |
| CN108242385B (en) | Method for growing gallium nitride, gallium nitride epitaxial structure and semiconductor device | |
| KR101609871B1 (en) | Method for fabricating gallium nitride and method for manufacturing substrate of gallium nitride with using the same | |
| CN112259446A (en) | Method for efficiently preparing gallium nitride substrate | |
| CN113345797A (en) | Method for growing aluminum gallium nitrogen | |
| CN113089091A (en) | Boron nitride template and preparation method thereof | |
| JP5152293B2 (en) | Manufacturing method of silicon carbide single crystal wafer with small mosaic property |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |