CN111105990A - Thin film structure suitable for copper metallized semiconductor device and preparation method thereof - Google Patents
Thin film structure suitable for copper metallized semiconductor device and preparation method thereof Download PDFInfo
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- CN111105990A CN111105990A CN201811271305.0A CN201811271305A CN111105990A CN 111105990 A CN111105990 A CN 111105990A CN 201811271305 A CN201811271305 A CN 201811271305A CN 111105990 A CN111105990 A CN 111105990A
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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Abstract
The invention discloses a film structure suitable for a copper metallized semiconductor device, which comprises a copper metal layer, a barrier layer and an adhesion layer, wherein the copper metal layer, the barrier layer and the adhesion layer are sequentially arranged between an upper metal layer and a substrate, the barrier layer is used for preventing copper from diffusing to the substrate, and the adhesion layer is used for adhering the barrier layer to the substrate. The invention also discloses a preparation method of the film structure suitable for the copper metallized semiconductor device. The film structure of the invention can improve the adhesiveness between the copper and the barrier layer and between the barrier layer and the substrate, and prevent the metal layer on the surface of the device from falling off.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a thin film structure suitable for a copper metallized semiconductor device and a preparation method thereof.
Background
Currently, copper-metallized semiconductor devices are widely used due to their excellent performance, but there are some problems that copper diffuses rapidly in semiconductor devices such as silicon and silicon oxide, and once copper ions enter the silicon devices, the copper ions become deep level acceptor impurities, so that the device performance is degraded or even fails, and therefore, a barrier layer is generally required to be added between copper and silicon. In order to solve the above problems, in the prior art, a single-layer or multi-layer thin film structure of titanium, titanium nitride, tantalum nitride, etc. is applied to a damascene process of an integrated circuit, and is mainly used for blocking copper ion diffusion and improving contact resistance. There are also a few patents that mention the use of metals such as gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, etc. as conductive layers in semiconductor device packages, mainly for improving contact resistance and corrosion resistance. In addition, there are some patents describing methods of filling holes with metals such as copper, tungsten, hot aluminum, and the like.
However, in the above process of using the metal layer structure as a barrier layer to block copper ion diffusion and improve resistance, there are still many problems, such as large leakage current of the device, poor adhesion of the metal layer, etc., which seriously affect the reliability and service life of the device, and even make the device completely fail.
Therefore, there is a need to design a new film structure suitable for copper-metallized semiconductor devices, which can block the diffusion of copper ions in the semiconductor device and improve the adhesion between copper and the barrier layer and silicon.
Disclosure of Invention
In order to solve the technical problems, the invention discloses a film structure suitable for a copper metallized semiconductor device and a preparation method thereof.
A first aspect of the present invention provides a thin film structure suitable for copper-metallized semiconductor devices, comprising a copper metal layer, a barrier layer and an adhesion layer sequentially disposed between an upper metal layer and a substrate, the barrier layer being for preventing diffusion of copper to the substrate, the adhesion layer being for adhering the barrier layer to the substrate. The adhesion layer is arranged between the barrier layer and the substrate, so that the viscosity between the barrier layer and the substrate is improved, the reliability of the device is improved, and the service life of the device is prolonged.
In one embodiment, the adhesion layer is a single layer of aluminum, tungsten, titanium, aluminum-silicon alloy, titanium-tungsten alloy, or titanium silicide, or a composite layer of any two or more of aluminum, tungsten, titanium, aluminum-silicon alloy, and titanium-tungsten alloy. For the design of the adhesion layer, the adhesion between the barrier layer and the substrate material is increased, ohmic contact can be formed between the barrier layer and the lower layer material, the contact resistance is reduced, and in addition, a certain barrier effect is realized on the diffusion of copper in the copper metal layer to the substrate material.
In one embodiment, the adhesion layer is a single aluminum layer, a single tungsten layer, a single titanium layer, a single aluminum-silicon alloy layer or a single titanium-tungsten alloy layer, and the thickness of the aluminum layer, the single tungsten layer, the single titanium layer, the single aluminum-silicon alloy layer or the single titanium-tungsten alloy layer is 0.001-5 μm.
In one embodiment, the adhesion layer is a titanium silicide layer, and the thickness of the titanium silicide layer is 0.001-2 μm.
In one embodiment, the barrier layer is a single layer of Ti, TiN, Ta, TaN, Co, or Ni, or a composite layer of two or more of Ti, TiN, Ta, TaN, Co, and Ni.
In one embodiment, the thickness of the barrier layer is 0.001 to 5 μm.
In one embodiment, the thickness of the copper metal layer is 0.1-100 μm.
In one embodiment, the upper metal layer is a single-layer metal structure of nickel, palladium, gold, silver, tin or lead, or a composite-layer metal structure of two or more layers of nickel, palladium, gold, silver, tin and lead.
In another aspect of the present invention, a method for preparing a thin film structure suitable for a copper-metallized semiconductor device is provided, which includes the following steps:
firstly, growing an adhesion layer and a barrier layer on a substrate in sequence by means of physical vapor deposition, chemical vapor deposition, atomic layer deposition or chemical plating;
forming a pattern on the barrier layer through a photoetching process;
step three, sequentially forming a copper metal layer and an upper metal layer on the barrier layer in the formed pattern in a physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating or chemical plating mode;
removing the photoresist in a dry photoresist removing or wet photoresist removing mode;
and fifthly, removing the redundant parts of the barrier layer and the adhesion layer in a dry etching or wet etching mode.
The film structure in the invention can not only improve the adhesion between the barrier layer and the substrate material, but also effectively prevent the diffusion of copper in the substrate material, optimize the performance of the device, improve the reliability of the device and ensure that the device can normally operate in severe environments such as high temperature, high pressure, high vibration and the like. Meanwhile, the film structure is suitable for all semiconductor devices containing copper metal and has wide application range.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
FIG. 1 is a schematic structural diagram of a thin film structure suitable for copper metallization of a semiconductor device in an embodiment of the present invention;
fig. 2 is a process flow diagram of a method for fabricating a thin film structure suitable for copper metallization of a semiconductor device in accordance with an embodiment of the present invention.
In the drawings, like parts are provided with like reference numerals. The drawings are not to scale.
Detailed Description
The invention will be further explained with reference to the drawings.
In the present invention, μm is a unit of length of μm.
Fig. 1 shows an embodiment of the present invention, which shows a thin film structure for copper-metallized semiconductor devices, the thin film structure is arranged between an upper metal layer 1 and a substrate 5, and sequentially comprises a copper metal layer 2, a barrier layer 3 and an adhesion layer 4, wherein the barrier layer 3 is used for preventing copper of the copper metal layer 2 from diffusing to the substrate 5, and the adhesion layer 4 is used for adhering the barrier layer 3 to the substrate 5. Preferably, the adhesion layer 4 may be a single aluminum layer, a single tungsten layer, a single titanium layer, an aluminum-silicon alloy layer, a titanium-tungsten alloy layer, or a single titanium silicide layer, or may be a composite layer of two or more of any of the aluminum layer, the tungsten layer, the titanium layer, the aluminum-silicon alloy layer, and the titanium-tungsten alloy layer. The adhesion layer 4 mainly functions to increase the adhesion between the barrier layer and the substrate material, and simultaneously can form ohmic contact between the barrier layer and the substrate material, reduce contact resistance, and also has a certain barrier effect on the diffusion of copper of the copper metal layer to the substrate material.
In some embodiments, when the adhesion layer 4 is an aluminum layer, a tungsten layer, a titanium layer, an aluminum-silicon alloy layer or a titanium-tungsten alloy layer, the thickness of the adhesion layer 4 in this case is preferably in the range of 0.001 to 5 μm, and in a preferred embodiment, the thickness of the adhesion layer 4 is 3 μm; in other embodiments, the adhesion layer 4 is a titanium silicide layer, which preferably has a thickness in the range of 0.001-2 μm, and in a preferred embodiment, the thickness of the titanium silicide layer is 0.05 μm.
Further, in the present embodiment, the barrier layer 3 may be a single layer of Ti (titanium), TiN (titanium nitride), Ta (tantalum), TaN (tantalum nitride), Co (cobalt), or Ni (nickel), and in some embodiments, may also be a composite layer of two or more layers of Ti (titanium), TiN (titanium nitride), Ta (tantalum), TaN (tantalum nitride), Co (cobalt), or Ni (nickel). The barrier layer functions to block the diffusion of copper into the substrate material. In some embodiments, the barrier layer preferably has a thickness in the range of 0.001 to 5 μm; further, in a preferred embodiment wherein the barrier layer has a thickness of 0.05 μm.
Furthermore, in some embodiments, the thickness of the copper metal layer 2 is 0.1-100 μm; copper metal layers of such thickness become the main conductive layer of the semiconductor device and are also buffer layers for package bonding. More preferably, the thickness of the copper metal layer is 60 μm.
Further, the upper metal layer 1 is a single layer of nickel, palladium, gold, silver, tin or lead, or a composite layer metal structure of two or more layers of nickel, palladium, gold, silver, tin and lead. The main function of the upper metal layer 1 is to protect the device.
In one embodiment, the barrier layer 3, the copper metal layer 2 and the upper metal layer 1 can be formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating or electroless plating.
As shown in fig. 2, which is a schematic process flow diagram of a method for manufacturing a thin film structure suitable for a copper-metallized semiconductor device, fig. 2 illustrates that the manufacturing method in the present application includes the following steps:
the method comprises the following steps: sequentially growing an adhesion layer 4 and a barrier layer 3 on a substrate 5 by means of physical vapor deposition, chemical vapor deposition, atomic layer deposition or chemical plating;
step two: forming a pattern on the barrier layer 3 by a photolithography process;
step three: in the formed pattern, sequentially forming a copper metal layer 2 and an upper metal layer 1 on a barrier layer 3 in a physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating or chemical plating mode;
step four: removing the photoresist 6 by a dry photoresist removing mode or a wet photoresist removing mode;
step five: and removing the redundant parts of the barrier layer and the adhesion layer by means of dry etching or wet etching.
The thin film structure of the present invention has the following advantages: the film structure is simple in structure and small in stress, and can form good ohmic contact with a substrate material, so that the power loss of a device is reduced; moreover, the adhesion layer is matched with the barrier layer to effectively prevent copper atoms from diffusing to the substrate material; the upper layer metal and the lower layer substrate can be effectively bonded, and the metal layer on the surface of the device is prevented from falling off.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. It is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (9)
1. A film structure suitable for copper metallized semiconductor device is characterized in that it includes a copper metal layer, a barrier layer and an adhesion layer which are arranged between an upper metal layer and a substrate in turn,
the barrier layer is used to prevent diffusion of copper into the substrate,
the adhesion layer is used to adhere the barrier layer to the substrate.
2. The film structure of claim 1, wherein the adhesion layer is a single layer of aluminum, tungsten, titanium, aluminum-silicon alloy, titanium-tungsten alloy, or titanium silicide, or a composite layer of any two or more of aluminum, tungsten, titanium, aluminum-silicon alloy, and titanium-tungsten alloy.
3. The film structure according to claim 1, wherein the adhesion layer is a single layer of aluminum, tungsten, titanium, aluminum-silicon alloy or titanium-tungsten alloy, and the thickness of the aluminum, tungsten, titanium, aluminum-silicon alloy or titanium-tungsten alloy is 0.001 to 5 μm.
4. The film structure of claim 1, wherein the adhesion layer is a titanium silicide layer, and the thickness of the titanium silicide layer is 0.001-2 μm.
5. The thin film structure of any of claims 1 to 4, wherein the barrier layer is a single layer of Ti, TiN, Ta, TaN, Co, or Ni, or a composite layer of two or more layers of Ti, TiN, Ta, TaN, Co, and Ni.
6. The film structure of claim 5, wherein the barrier layer has a thickness of 0.001 to 5 μm.
7. The film structure of claim 1, wherein the copper metal layer has a thickness of 0.1-100 μm.
8. The film structure according to claim 1, wherein the upper metal layer is a single-layer metal structure of nickel, palladium, gold, silver, tin or lead, or a composite-layer metal structure of two or more layers of nickel, palladium, gold, silver, tin and lead.
9. A method for preparing a thin film structure suitable for a copper metallized semiconductor device is characterized by comprising the following steps:
the method comprises the following steps: sequentially growing an adhesion layer and a barrier layer on the substrate in a physical vapor deposition, chemical vapor deposition, atomic layer deposition or chemical plating mode;
step two: forming a pattern on the barrier layer by a photoetching process;
step three: sequentially forming a copper metal layer and an upper metal layer on the barrier layer in the formed pattern in a physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating or chemical plating mode;
step four: removing the photoresist by a dry photoresist removing mode or a wet photoresist removing mode;
step five: and removing the redundant parts of the barrier layer and the adhesion layer by means of dry etching or wet etching.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112645275A (en) * | 2020-12-11 | 2021-04-13 | 中国科学院微电子研究所 | Metal microelectrode applied to high-temperature pressure sensor and preparation method thereof |
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