CN111105989A - Method for passivating a substrate and passivating device - Google Patents
Method for passivating a substrate and passivating device Download PDFInfo
- Publication number
- CN111105989A CN111105989A CN201811268753.5A CN201811268753A CN111105989A CN 111105989 A CN111105989 A CN 111105989A CN 201811268753 A CN201811268753 A CN 201811268753A CN 111105989 A CN111105989 A CN 111105989A
- Authority
- CN
- China
- Prior art keywords
- external combustion
- temperature
- passivation
- combustion chamber
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention provides a method for passivating a substrate, comprising the following steps: igniting the mixture of hydrogen and oxygen in the outer combustion chamber to generate water vapor; the temperature in the external combustion cavity is monitored in real time through a temperature detection element arranged at an ignition position in the external combustion cavity and is compared with a preset temperature, so that the temperature in the external combustion cavity is adjusted in real time through a first heating module arranged on the periphery of the external combustion cavity; and introducing the water vapor into a passivation process chamber provided with a substrate. The invention also provides passivation equipment. When the method provided by the invention is used for passivating the substrate, the formed particles are fewer or even none, and the flatness of the passivation film is higher.
Description
Technical Field
The present invention relates to the field of microelectronic processing, and in particular to a method of passivating a substrate and a passivation apparatus for performing the method.
Background
Silicon wafers are commonly used raw materials in the field of microelectronic processing. In order to protect a silicon wafer or a device formed of a silicon wafer, a silicon dioxide passivation film is generally formed on the surface of the silicon wafer or silicon.
Common methods for forming a silicon dioxide passivation film include three types: dry oxygen processes, wet oxygen processes, and ethylene dichloride oxidation processes. The wet oxygen method is widely applied due to the advantages of low cost, high film growth speed, no pollution and the like.
Specifically, the wet oxygen method forms the passivation film by the following steps:
introducing hydrogen and oxygen into the external combustion chamber to obtain mixed gas;
igniting the mixed gas to obtain water vapor, and introducing the water vapor into the passivation process cavity to oxidize the silicon wafer in the passivation process cavity and form a silicon dioxide passivation film on the surface of the silicon wafer.
However, when a silica passivation film is formed by a wet oxidation method, silica particles are easily generated, and the film formation quality is deteriorated.
Therefore, how to avoid the generation of particles when the silica passivation film is grown by a wet oxygen method becomes a technical problem to be solved in the field.
Disclosure of Invention
The object of the invention is to provide a method for passivating a substrate and a passivating apparatus for performing the method. The method is a wet oxygen method, and the method has the advantages of small particle amount and high film forming rate when a silicon dioxide passivation film is formed.
In order to achieve the above object, as one aspect of the present invention, there is provided a method of passivating a substrate, wherein the method includes:
igniting the mixture of hydrogen and oxygen in the outer combustion chamber to generate water vapor;
the temperature in the external combustion cavity is monitored in real time through a temperature detection element arranged at an ignition position in the external combustion cavity and is compared with a preset temperature, so that the temperature in the external combustion cavity is adjusted in real time through a first heating module arranged on the periphery of the external combustion cavity;
and introducing the water vapor into a passivation process chamber provided with a substrate.
Preferably, the temperature in the external combustion chamber decreases as the temperature in the passivation process chamber increases.
Preferably, the temperature in the passivation process cavity is between 700 ℃ and 800 ℃, and the temperature in the external combustion cavity is between 850 ℃ and 900 ℃; or the like, or, alternatively,
the temperature in the passivation process cavity is between 800 ℃ and 900 ℃, and the temperature in the external combustion cavity is between 800 ℃ and 850 ℃; or the like, or, alternatively,
when the temperature in the passivation process cavity is higher than 900 ℃, the temperature in the external combustion cavity is between 700 ℃ and 750 ℃.
Preferably, hydrogen and oxygen are introduced into the external combustion chamber by means of a gas supply pipe.
Preferably, the flow rate of gas supplied into the external combustion chamber by the gas supply pipe does not exceed a predetermined flow rate.
Preferably, the method further comprises heating a transition pipeline arranged between the external combustion chamber and the passivation process chamber and used for communicating the external combustion chamber with the passivation process chamber.
As another aspect of the present invention, there is provided a passivation apparatus including an external combustion chamber and a passivation process chamber communicating with the external combustion chamber, wherein the passivation apparatus further includes:
the temperature detection element is arranged at the ignition position in the external combustion cavity and used for monitoring the temperature in the external combustion cavity in real time;
the first heating module is arranged on the periphery of the external combustion cavity and used for heating the external combustion cavity so as to adjust the temperature in the external combustion cavity in real time.
Preferably, the passivation apparatus further comprises:
and the control module is used for controlling the power of the first heating module according to the temperature detected by the temperature detection element.
Preferably, the passivation apparatus further comprises:
and one end of the air supply pipe is communicated with the external combustion cavity.
Preferably, the passivation device further comprises a transition pipeline for communicating the external combustion chamber with the passivation process chamber, and a second heating module for heating the transition pipeline.
In the invention, the condensation point in the external combustion cavity can be avoided by detecting the temperature in the external combustion cavity in real time and adjusting the temperature in the external combustion cavity in real time, and the gas introduced into the passivation process cavity is ensured to be water vapor.
Because the water vapor entering the passivation process cavity does not contain liquid drops, water molecules can react with the substrate in the passivation process cavity, and a passivation film without particles is generated on the surface of the substrate, so that the flatness of the passivation film is improved. It is readily understood that the substrate is made of silicon and the passivation film is a silicon dioxide passivation film.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of the formation of a silicon dioxide passivation film using a wet oxygen process as provided in the prior art;
FIG. 2 is a schematic illustration of particle formation on a silicon dioxide passivation film;
FIG. 3 is a flow chart of a method provided by the present invention;
FIG. 4 is a graph showing the relationship between the temperature of the external combustion chamber and the amount of particles;
FIG. 5 is a schematic view of one embodiment of a passivation apparatus provided by the present invention;
FIG. 6 is a schematic view of an external combustion chamber of another embodiment of the passivation apparatus provided by the present invention.
Description of the reference numerals
110: silicon body 120: passivation film
130: the protrusion 200: external combustion chamber
300: passivating the process chamber 410: first heating module
500: the gas supply pipe 600: temperature detecting element
700: flame detector
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The inventor of the present invention has found that the reason for forming the silicon dioxide passivation film by the wet oxygen method is as follows:
when the hydrogen and the oxygen in the external combustion chamber react to generate water, small droplets which are not completely gasified into water molecules exist in the water vapor due to the existence of condensation points, in other words, the water vapor introduced into the passivation process chamber is not completely gasified into water molecules B, but contains microscopic small water droplets A (as shown in FIG. 1). The passivation film 120 and the silicon body 110 can be obtained through the reaction of water molecules with the silicon wafer. When the small water drops a on the surface of the silicon wafer 100, water molecules cannot be bonded to the silicon wafer and thus cannot react, and the protrusions 130 are formed on the silicon body 110, and since the protrusions 130 are not tightly bonded to the silicon, they easily fall off to form particles, which deteriorates the flatness of the passivation film 120.
In view of the above, as one aspect of the present invention, there is provided a method of passivating a substrate, wherein, as shown in fig. 3, the method includes:
igniting a mixture of hydrogen and oxygen within the external combustion chamber to generate steam in step S110;
in step S120, monitoring the temperature in the external combustion chamber in real time through a temperature detection element disposed at an ignition position in the external combustion chamber, and comparing the temperature with a preset temperature, so as to adjust the temperature in the external combustion chamber in real time by using a first heating module disposed at the periphery of the external combustion chamber;
in step S130, the water vapor is introduced into a passivation process chamber in which the substrate is disposed.
It should be noted that "water vapor" herein refers to gaseous water that is vaporized into water molecules, and does not include water vapor that cannot be vaporized into water molecules.
The step S120 can ensure that the temperature in the external combustion chamber is consistent with the preset temperature, so as to avoid condensation points in the external combustion chamber and ensure that the gas introduced into the passivation process chamber is water vapor.
Because the water vapor entering the passivation process cavity does not contain liquid drops, water molecules can react with the substrate in the passivation process cavity, and a passivation film without particles is generated on the surface of the substrate, so that the flatness of the passivation film is improved. It is readily understood that the substrate is made of silicon and the passivation film is a silicon dioxide passivation film. The surface of the substrate may or may not have a pattern.
In the present invention, the temperature inside the external combustion chamber may be determined according to the temperature required to perform step S130. The method provided by the invention can be suitable for passivation processes at different temperatures. Preferably, the temperature in the external combustion chamber decreases as the temperature in the passivation process chamber increases.
For example, the temperature in the passivation process chamber is between 700 ℃ and 800 ℃, and the temperature in the external combustion chamber is between 850 ℃ and 900 ℃.
Or the temperature in the passivation process cavity is between 800 ℃ and 900 ℃, and the temperature in the external combustion cavity is between 800 ℃ and 850 ℃.
Or when the temperature in the passivation process cavity is higher than 900 ℃, the temperature in the external combustion cavity is between 700 and 750 ℃.
Shown in fig. 4 is a graph of the relationship between the external combustion chamber temperature and the number of particles in the passivation process chamber when the process temperature in step S130 is 800 ℃. As shown in FIG. 4, TOP (> 0.09 μ) indicates the number of particles with a particle size larger than 0.09 μm at the TOP of the passivation chamber, CTR (> 0.09 μ) indicates the number of particles with a particle size larger than 0.09 μm at the middle of the passivation chamber, and BTM (> 0.09 μ) indicates the number of particles with a particle size larger than 0.09 μm at the bottom of the passivation chamber. TOP (> 1 μ) indicates the number of particles with a particle size larger than 1m at the TOP of the passivation process chamber, CTR (> 1 μ) indicates the number of particles with a particle size larger than 1 μm at the middle of the passivation process chamber, and BTM (> 1 μ) indicates the number of particles with a particle size larger than 1 μm at the bottom of the passivation process chamber.
In FIG. 4, the abscissa indicates the temperature of the external combustion chamber, the ordinate on the left side indicates the number of particles having a particle diameter of more than 1 μm, and the ordinate on the right side indicates the number of particles having a particle diameter of more than 0.09. mu.m.
It can be seen from fig. 4 that as the temperature of the external combustion chamber increases from 700 c to 750 c and higher, the number of particles with a particle size greater than 1 μm and the number of particles with a particle size greater than 0.09 μm in the passivation process chamber decrease.
In the present invention, there is no particular limitation on how the temperature in the external combustion chamber is ensured. For example, a heater may be provided outside the external combustion chamber to ensure that the temperature of the external combustion chamber is within the predetermined range described above.
The temperature in the outer combustion chamber can be ensured to be in a preset range by adjusting the power of the heating wire in the outer combustion chamber.
The external combustion chamber and the passivation process chamber are typically connected by a transition line. As an embodiment of the invention, a condensation point between the external combustion chamber and the passivation process chamber can be prevented by heating the transition pipeline, so that no liquid water exists in the water vapor introduced into the passivation process chamber.
In addition to adjusting the temperature in the external combustion chamber by adjusting the power of the heater, in order to better adjust the temperature in the external combustion chamber, it is preferable to reduce the flow rate of the gas flow (i.e., the mixture of oxygen and hydrogen) introduced into the external combustion chamber while the heater is provided, thereby further preventing the temperature in the external combustion chamber from being reduced. That is, the flow rate of gas supplied into the external combustion chamber using the gas supply pipe does not exceed a predetermined flow rate. As a preferred embodiment, the predetermined flow rate does not exceed 2000 mL/min.
In the present invention, there is no particular requirement for step S130. For example, in one embodiment, step S130 may include:
raising the temperature, in which the temperature in the passivation process chamber is raised to a process temperature (e.g., 850 ℃);
a main process step, wherein in the main process step, water vapor generated by an external combustion chamber is introduced, and the temperature in the passivation process chamber is maintained at the process temperature;
a purging step in which the temperature within the passivation process chamber is still maintained at the process temperature;
and (5) cooling.
In the purge step, nitrogen is typically introduced to remove unreacted water vapor and prevent the water vapor from liquefying in the passivation process chamber.
Of course, the present invention is not limited thereto, and the temperature in the passivation process chamber may be set according to actual process requirements.
As a second aspect of the present invention, there is provided a passivation apparatus, as shown in fig. 5 and 6, the passivation apparatus includes an external combustion chamber 200 and a passivation process chamber 300 communicated with the external combustion chamber 200, wherein the passivation apparatus further includes a temperature detection element 600 and a first heating module 410, and the temperature detection element 600 is disposed at an ignition position inside the external combustion chamber 200 for monitoring the temperature inside the external combustion chamber 200 in real time.
The first heating module 410 is disposed at the periphery of the external combustion chamber 200, and is used for heating the external combustion chamber 200 to adjust the temperature in the external combustion chamber 200 in real time.
The passivation device can be used for carrying out the method for passivating the substrate.
By comparing the preset temperature with the temperature in the external combustion chamber 200 monitored in real time and then adjusting the temperature in the external combustion chamber 200 by using the first heating module 410, it can be ensured that no condensation point exists in the external combustion chamber 200, and further it is ensured that the gas introduced into the passivation process chamber 300 from the external combustion chamber 200 is vapor which is gasified into a molecular state. Because the water vapor entering the passivation process cavity does not contain liquid drops, water molecules can react with the substrate in the passivation process cavity, and a passivation film without particles is generated on the surface of the substrate, so that the flatness of the passivation film is improved.
In the present invention, how to adjust the temperature inside the external combustion chamber by the first heating module 410 according to the temperature inside the external combustion chamber 200 monitored by the temperature detecting element 600 is not particularly limited.
For example, the output power of the first heating module 410 may be manually adjusted directly according to the temperature detected by the temperature detecting element 600, so as to adjust the temperature in the external combustion chamber 200.
In order to realize automatic control, as a preferred embodiment, the passivation apparatus may further include a control module for controlling the power of the first heating module 410 according to the temperature detected by the temperature detecting element 600.
When the temperature in the external combustion chamber 200 is below the lower limit temperature of the predetermined range, the control module may control the power of the first heating module 410 to increase; the control module may control the power of the first heating module 410 to decrease when the temperature within the external combustion chamber is greater than an upper temperature of the predetermined range. The control of the control module is beneficial to improving the process stability of the method provided by the invention, and the passivation film with uniform thickness is formed on the surface of the substrate.
In the present invention, the specific structure of the temperature sensing element 600 is not particularly limited, and for example, the temperature sensing element 600 may include a thermocouple.
As an embodiment, the passivation apparatus includes a gas supply pipe 500, one end of the gas supply pipe 500 is communicated with the external combustion chamber 200 to supply hydrogen (H) gas2) And oxygen (O)2) And is introduced into the external combustion chamber 200.
It will be appreciated that the other end of the gas supply tube 500 may be connected to a tee structure for connection to a source of oxygen and a source of hydrogen, respectively.
As described above, in the present invention, it is possible to ensure that the temperature in the outer combustion chamber is within the predetermined range by reducing the gas flow rate, and accordingly, the temperature control means includes a flow control module for controlling the gas flow rate in the gas supply pipe 500.
In order to further prevent the gas entering the passivation process chamber 300 from being liquefied, it is preferable that the passivation apparatus further includes a transition line communicating the external combustion chamber 200 and the passivation process chamber 300, and a second heating module heating the transition line.
In the present invention, the mixture of hydrogen and oxygen is ignited inside the external combustion chamber. As shown in fig. 6, a flame detector 700 is provided on the outer combustion chamber 200. The flame detector 700 is used for detecting whether flame is generated in the external combustion chamber 200, when flame is generated in the external combustion chamber 200, the hydrogen and oxygen introduced into the external combustion chamber 200 are combusted, and the gas introduced into the passivation process chamber 300 is water vapor. When the flame detector 700 fails to detect a flame in the outer combustion chamber 200, indicating that the hydrogen and oxygen gases entering the outer combustion chamber 200 fail to react, the gases entering the passivation process chamber 300 are hydrogen and oxygen, in which case the process should be stopped as soon as possible.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A method of passivating a substrate, comprising:
igniting the mixture of hydrogen and oxygen in the outer combustion chamber to generate water vapor;
the temperature in the external combustion cavity is monitored in real time through a temperature detection element arranged at an ignition position in the external combustion cavity and is compared with a preset temperature, so that the temperature in the external combustion cavity is adjusted in real time through a first heating module arranged on the periphery of the external combustion cavity;
and introducing the water vapor into a passivation process chamber provided with a substrate.
2. The method of claim 1, wherein the temperature within the external combustion chamber decreases as the temperature within the passivation process chamber increases.
3. The method of claim 2, wherein the temperature in the passivation process chamber is between 700 ℃ and 800 ℃, and the temperature in the external combustion chamber is between 850 ℃ and 900 ℃; or the like, or, alternatively,
the temperature in the passivation process cavity is between 800 ℃ and 900 ℃, and the temperature in the external combustion cavity is between 800 ℃ and 850 ℃; or the like, or, alternatively,
when the temperature in the passivation process cavity is higher than 900 ℃, the temperature in the external combustion cavity is between 700 ℃ and 750 ℃.
4. A method according to any one of claims 1 to 3, wherein hydrogen and oxygen are introduced into the external combustion chamber using a gas supply tube.
5. The method of claim 4, wherein the flow rate of gas supplied into the external combustion chamber using the gas supply tube does not exceed a predetermined flow rate.
6. The method as claimed in any one of claims 1 to 3, further comprising heating a transition line disposed between the external combustion chamber and the passivation process chamber for communicating the two.
7. A passivating apparatus comprising an external combustion chamber and a passivating process chamber in communication therewith, wherein the passivating apparatus further comprises:
the temperature detection element is arranged at the ignition position in the external combustion cavity and used for monitoring the temperature in the external combustion cavity in real time;
the first heating module is arranged on the periphery of the external combustion cavity and used for heating the external combustion cavity so as to adjust the temperature in the external combustion cavity in real time.
8. The passivation apparatus of claim 7, further comprising:
and the control module is used for controlling the power of the first heating module according to the temperature detected by the temperature detection element.
9. Passivation device according to claim 7 or 8, characterized in that the passivation device further comprises:
and one end of the air supply pipe is communicated with the external combustion cavity.
10. The passivation apparatus according to claim 7 or 8, further comprising a transition line communicating the external combustion chamber and the passivation process chamber, and a second heating module heating the transition line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811268753.5A CN111105989B (en) | 2018-10-29 | 2018-10-29 | Method for passivating a substrate and passivating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811268753.5A CN111105989B (en) | 2018-10-29 | 2018-10-29 | Method for passivating a substrate and passivating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111105989A true CN111105989A (en) | 2020-05-05 |
| CN111105989B CN111105989B (en) | 2022-10-21 |
Family
ID=70419400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811268753.5A Active CN111105989B (en) | 2018-10-29 | 2018-10-29 | Method for passivating a substrate and passivating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111105989B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06204210A (en) * | 1993-11-25 | 1994-07-22 | Tokyo Electron Tohoku Ltd | Method and furnace for high pressure oxidation |
| US5785762A (en) * | 1996-07-25 | 1998-07-28 | Nec Corporation | External combustion oxidation apparatus |
| CN1605116A (en) * | 2001-05-09 | 2005-04-06 | 东京毅力科创株式会社 | Apparatus and method for heat treating semiconductor |
| CN105470168A (en) * | 2015-11-20 | 2016-04-06 | 中国电子科技集团公司第四十八研究所 | Hydrogen-oxygen synthesis apparatus and system for high-temperature oxidation furnace |
-
2018
- 2018-10-29 CN CN201811268753.5A patent/CN111105989B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06204210A (en) * | 1993-11-25 | 1994-07-22 | Tokyo Electron Tohoku Ltd | Method and furnace for high pressure oxidation |
| US5785762A (en) * | 1996-07-25 | 1998-07-28 | Nec Corporation | External combustion oxidation apparatus |
| CN1605116A (en) * | 2001-05-09 | 2005-04-06 | 东京毅力科创株式会社 | Apparatus and method for heat treating semiconductor |
| CN105470168A (en) * | 2015-11-20 | 2016-04-06 | 中国电子科技集团公司第四十八研究所 | Hydrogen-oxygen synthesis apparatus and system for high-temperature oxidation furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111105989B (en) | 2022-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6417052B2 (en) | Substrate processing apparatus, semiconductor device manufacturing method, and program | |
| US20160076149A1 (en) | Substrate processing apparatus, method of manufacturing semiconductor device and furnace lid | |
| US8003411B2 (en) | Device for processing a substrate, method of processing a substrate and method of manufacturing semiconductor device | |
| WO2013077321A1 (en) | Apparatus for manufacturing semiconductor device, method for manufacturing semiconductor device, and recoding medium | |
| US5561087A (en) | Method of forming a uniform thin film by cooling wafers during CVD | |
| CN104520975A (en) | Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium | |
| US20150132972A1 (en) | Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium | |
| US20090064765A1 (en) | Method of Manufacturing Semiconductor Device | |
| US20040007186A1 (en) | Heat-treating device | |
| CN111105989B (en) | Method for passivating a substrate and passivating device | |
| JP2012054393A (en) | Substrate processing apparatus and semiconductor manufacturing method | |
| US20130323915A1 (en) | Method and apparatus for forming silicon film | |
| EP1357582B1 (en) | Heat-treating device | |
| JP6910387B2 (en) | Semiconductor device manufacturing method, board processing method, board processing device and program | |
| JP2007073880A (en) | Substrate processing apparatus | |
| US11986847B2 (en) | Nozzle installation jig | |
| US20230290653A1 (en) | Etching method and etching apparatus | |
| US20230279551A1 (en) | Raw material supply system, substrate processing apparatus, and method of manufacturing semiconductor device | |
| JP2023131971A (en) | Etching method and etching device | |
| US20060060144A1 (en) | Substrate processing apparatus and method using the same | |
| TW202322244A (en) | Substrate processing apparatus, use of substrate processing apparatus, method of manufacturing semiconductor device and computer program product | |
| KR20060087049A (en) | Apparatus for maintaining temperature | |
| JP2019099871A (en) | Leak detection method of deposition film forming device and deposition film forming method | |
| KR20060033254A (en) | Apparatus for fabricating semiconductor device using automatic exhaustion control valve | |
| KR20130009385A (en) | Semiconductor device fabrication apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |