CN111103519A - Method for regulating and controlling RKKY (trans-King ky) by utilizing low voltage on artificial antiferromagnetic structure - Google Patents

Method for regulating and controlling RKKY (trans-King ky) by utilizing low voltage on artificial antiferromagnetic structure Download PDF

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CN111103519A
CN111103519A CN201911072262.8A CN201911072262A CN111103519A CN 111103519 A CN111103519 A CN 111103519A CN 201911072262 A CN201911072262 A CN 201911072262A CN 111103519 A CN111103519 A CN 111103519A
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layer
artificial antiferromagnetic
low voltage
regulating
antiferromagnetic structure
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张晓慧
周子尧
胡忠强
张瑶
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Xi'an Kehui Electronic Technology Co ltd
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    • G—PHYSICS
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Abstract

The invention discloses a method for regulating and controlling RKKY (Kernel-based gradient) by using low voltage on an artificial antiferromagnetic structure, which comprises the following steps: sequentially growing a Ta layer and an artificial antiferromagnetic structure on a flexible substrate, changing the thickness of a nonmagnetic layer, converting materials between a ferromagnetic layer and an antiferromagnetic layer by changing the thickness of the nonmagnetic layer, and observing the thickness dependence characteristic of the materials; carrying out stress test on a Ta layer and an artificial antiferromagnetic structure which grow on a flexible substrate, testing a hysteresis loop on materials with different curvatures and observing the recovery of the materials; and (3) applying voltage (less than or equal to 4V) to the material on the Si substrate by using the ionic liquid for regulation, applying voltage to the material on the flexible substrate under different curvatures for regulation, and observing the change of a hysteresis loop. The scheme successfully realizes the change of ferromagnetic and antiferromagnetic states of the artificial antiferromagnet under the regulation and control of voltage and the conversion of single, double and triple hysteresis loops, and simultaneously keeps good recovery.

Description

Method for regulating and controlling RKKY (trans-King ky) by utilizing low voltage on artificial antiferromagnetic structure
Technical Field
The invention belongs to the field of voltage regulation and control of magnetic ultrathin films, and particularly relates to a method for regulating and controlling RKKY by using low voltage on an artificial antiferromagnetic structure.
Background
The trend to develop seamless connectivity between the biological and digital worlds requires portable/wearable devices to be ubiquitous. Flexible electronic devices have an extremely thin thickness and good adaptability to curved surfaces, and have become a sophisticated field of functional devices. As is well known, magnetic sensors have been widely used for medical diagnosis, data storage, communication, and the like. New flexible spintronic devices will emerge if they are attached or implanted to the human body or curved surfaces. Studies have shown that the interaction of perpendicular Synthetic Antiferromagnetic (SAF) nanostructures with Ruderman-Kittel-Kasuya-yosida (rkky) plays a very important role for many magnetic devices, such as ultra high density Giant Magnetoresistance (GMR) devices, novel 3D logic applications, domain wall based memory systems. However, maintaining good magnetic signal and mechanical stability of magnetic devices remains a significant challenge when flexible substrates are involved, especially for complex nanostructures such as vertical SAF. In such structures, both Perpendicular Magnetic Anisotropy (PMA) and RKKY interactions require precise control of the interfacial properties between layers to ensure their performance, which presents significant challenges in flexible spintronics substrate roughness and surface non-planarity.
Disclosure of Invention
In order to solve the above-mentioned defects in the prior art, the present invention aims to provide a method for regulating and controlling RKKY by using low voltage on an artificial antiferromagnetic structure, which successfully realizes the change of ferromagnetic and antiferromagnetic states and the conversion of single, double and triple hysteresis loops under the regulation and control of voltage on the artificial antiferromagnetic structure, and simultaneously maintains good recovery.
The invention is realized by the following technical scheme.
A method for regulating RKKY by using low voltage on an artificial antiferromagnetic structure comprises the following steps:
step 1, growing a Ta layer and an artificial antiferromagnetic structure on a flexible substrate in sequence, wherein the artificial antiferromagnetic structure comprises an upper ferromagnetic layer, a lower ferromagnetic layer and a nonmagnetic layer between the upper ferromagnetic layer and the lower ferromagnetic layer, the thickness of the nonmagnetic layer is changed, the change of the thickness of the nonmagnetic layer enables a material to be converted between the ferromagnetic layer and the antiferromagnetic layer, and the thickness dependence characteristic of the material is observed;
step 2, carrying out stress test on a Ta layer and an artificial antiferromagnetic structure which grow on the flexible substrate, testing a hysteresis loop on materials with different curvatures and observing the recoverability of the materials;
and 3, adding low voltage for regulating and controlling the material on the Si substrate by using the ionic liquid, adding voltage for regulating and controlling the material on the flexible substrate under different curvatures, and observing the change of the hysteresis loop.
Further, in the step 1, the growth process is carried out at room temperature, and the base gas pressure is less than 10-7Torr, and the working Ar pressure was 3 mT.
Further, the Ta layer + artificial antiferromagnetic structure is:
Fe40Co40B201.5nm/Ru(x nm)/Fe40Co40B201.5nm/Ta7.5nm；
the thickness x of the nonmagnetic layer Ru is respectively
Figure BDA0002261325450000021
Or
Figure BDA0002261325450000022
Further, the Ta layer + artificial antiferromagnetic structure is:
Figure BDA0002261325450000023
the thickness x of the nonmagnetic layer Ru is respectively
Figure BDA0002261325450000024
Or
Figure BDA0002261325450000025
Further, the substrate is Si/SiO.
Further, in the step 3, the selected ionic liquid is [ AAIM ] + [ TFSI ] -, the Ta layer and the artificial antiferromagnetic structure film are covered with the ionic liquid, and the film and the power supply are connected by gold wires.
Furthermore, in the step 3, the low voltage is less than or equal to 4V.
Further, in the step 3, the ionic liquid is further gelled into the ionic glue by the following method:
polymer P (VDF-HFP), ionic liquid, acetone solvent in a 1: 4: 10 and magnetically stirring for at least 1 hour until the mixture becomes a clear and homogeneous liquid; then, the solution was spin-coated on a glass slide to form a solid polymer electrolyte, and after baking in a vacuum oven at 50 ℃, an ionic gel was obtained.
Compared with the prior art, the invention has the following technical effects:
the method of the invention has the first success to change the ferromagnetism of the SAF by changing the thickness of the intermediate non-magnetic layer; the second success realizes the change of single, double and triple magnetic hysteresis loops by adding voltage; the SAF structure was grown on a flexible substrate with the third success and the same effect was obtained with the application of voltage.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a schematic structural view of an artificial antiferromagnet of the present invention on a substrate and a Ta layer;
FIG. 2 is a VSM curve of the sample of example 1 under varying thickness of the nonmagnetic layer;
FIG. 3 is a VSM curve of the sample of example 1 after voltage application;
FIG. 4 is a VSM curve of the sample of example 2 under varying thickness of the nonmagnetic layer;
FIG. 5 is a VSM curve of the sample in example 2 in a bent state;
FIG. 6 is a VSM curve of the sample of example 2 after voltage application in a flat state.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
As shown in fig. 1, the structure of the artificial antiferromagnet of the present invention on the substrate and Ta layer is shown, and the artificial antiferromagnet maintains good recovery by changing the ferromagnetic and antiferromagnetic states and switching the single, double and triple hysteresis loops under the control of voltage.
The invention discloses a method for regulating RKKY by using low voltage on an artificial antiferromagnetic structure, which comprises the following steps:
step 1, changing the thickness of a non-magnetic layer, and observing the thickness dependence characteristic of the non-magnetic layer; the change in thickness of the nonmagnetic layer causes the material to switch between a ferromagnetic phase and an antiferromagnetic phase.
And 2, performing stress test on the structure grown on the flexible substrate, testing a hysteresis loop on the material under different curvatures, and observing the recovery of the material.
Step 3, controlling the magnetic ultrathin film by using ionic liquid under low voltage (less than or equal to 4V), and observing the change of a magnetic hysteresis loop; and voltage regulation is applied to the material on the Si substrate, and the voltage regulation is applied to the material on the flexible substrate under different curvatures.
The invention is further illustrated by the following specific examples.
Example 1:
for Fe40Co40B20(1.5nm)/Ru(x nm)/Fe40Co40B20(1.5nm)/Ta (7.5nm) comprising the steps of:
1) preparing a film: sequential growth of Fe on Si/SiO using magnetron sputtering equipment40Co40B20、Ru、Fe40Co40B20Ta, the growth process is carried out at room temperature, and the base gas pressure is less than 10-7Torr, and the working Ar pressure was 3 mT.
The thickness of the nonmagnetic layer Ru is respectively
Figure BDA0002261325450000041
Or
Figure BDA0002261325450000042
2) The hysteresis loop of the sample was tested using a Vibrating Sample Magnetometer (VSM), 1 is the hysteresis loop of the film as a function of Ru layer thickness, and it can be seen that as the film thickness increases, the film changes from a ferromagnetic phase to an anti-ferromagnetic phase and back to a ferromagnetic phase.
3) Voltage regulation and control: the ionic liquid is coated on the film by using an ionic liquid regulation mode, the selected ionic liquid is [ AAIM ] + [ TFSI ] -, and the film is connected with a B2901A type power supply by using a gold wire.
4) The ferroelectricity of the magnetic core is tested by VSM under different voltages, and the hysteresis loop is changed from double to three to single as shown in figures 2 and 3.
Example 2:
to pair
Figure BDA0002261325450000051
The structure comprises the following steps:
1) preparing a film: growing on Si/SiO and flexible substrate Kapton by using magnetron sputtering equipment
Figure BDA0002261325450000052
The growth process is carried out at room temperature, and the base gas pressure is less than 10-7Torr, and the working Ar pressure was 3 mT. The thickness of the nonmagnetic layer Ru is respectively
Figure BDA0002261325450000053
Or
Figure BDA0002261325450000054
2) The magnetic hysteresis loop of the sample is tested by using a vibrating sample magnet or intensity meter (VSM), 1 is the change of the magnetic hysteresis loop of the film along with the thickness of the Ru layer, and the magnetic hysteresis loop is greatly changed along with the thickness of the film, so that the magnetic hysteresis loop is gradually transited from a ferromagnetic phase to an antiferromagnetic phase.
3) The flexible film was placed on a mold with a curvature of 10cm and after testing, turned over and tested again. As shown in fig. 4 and 5, the flexible film does not change much after being bent.
4) Voltage regulation and control: the ionic liquid is gelled to be used as a regulating and controlling means. The specific manufacturing method comprises the following steps:
polymer P (VDF-HFP), ionic liquid, acetone solvent in a 1: 4: 10 and magnetically stirred for at least 1 hour until the mixture becomes a clear homogeneous liquid. The solution was then spin coated onto a glass slide to form a solid polymer electrolyte. After baking in a vacuum oven at 50 ℃, the ionic glue is obtained.
5) The film was covered with an ionic glue, and the film was connected to a B2901A type power supply by gold wire. Voltages of 0V, 2.5V and 4V are applied in the flat state, respectively, and as shown in fig. 6, when the voltage is applied to 4V, the rate of domain inversion becomes significantly faster.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.

Claims (8)

1. A method for regulating RKKY by using low voltage on an artificial antiferromagnetic structure is characterized by comprising the following steps:
step 1, growing a Ta layer and an artificial antiferromagnetic structure on a flexible substrate in sequence, wherein the artificial antiferromagnetic structure comprises an upper ferromagnetic layer, a lower ferromagnetic layer and a nonmagnetic layer between the upper ferromagnetic layer and the lower ferromagnetic layer, the thickness of the nonmagnetic layer is changed, the change of the thickness of the nonmagnetic layer enables a material to be converted between the ferromagnetic layer and the antiferromagnetic layer, and the thickness dependence characteristic of the material is observed;
step 2, carrying out stress test on a Ta layer and an artificial antiferromagnetic structure which grow on the flexible substrate, testing a hysteresis loop on materials with different curvatures and observing the recoverability of the materials;
and 3, adding low voltage for regulating and controlling the material on the Si substrate by using the ionic liquid, adding voltage for regulating and controlling the material on the flexible substrate under different curvatures, and observing the change of the hysteresis loop.
2. According to claim 1The method for regulating and controlling RKKY by using low voltage on the artificial antiferromagnetic structure is characterized in that in the step 1, the growth process is carried out at room temperature, and the basic air pressure is less than 10-7Torr, and the working Ar pressure was 3 mT.
3. The method for regulating RKKY on the artificial antiferromagnetic structure with low voltage as recited in claim 1 wherein the Ta layer + artificial antiferromagnetic structure is:
Fe40Co40B201.5nm/Ru x nm/Fe40Co40B201.5nm/Ta7.5nm；
the thickness x of the nonmagnetic layer Ru is respectively
Figure FDA0002261325440000011
Or
Figure FDA0002261325440000012
4. The method for regulating RKKY on the artificial antiferromagnetic structure with low voltage as recited in claim 1 wherein the Ta layer + artificial antiferromagnetic structure is:
Figure FDA0002261325440000013
the thickness x of the nonmagnetic layer Ru is respectively
Figure FDA0002261325440000014
Or
Figure FDA0002261325440000015
5. The method for RKKY utilizing low voltage regulation on artificial antiferromagnetic structures as claimed in claim 1 wherein said substrate is Si/SiO.
6. The method for regulating RKKY on artificial antiferromagnetic structure using low voltage as claimed in claim 1 wherein in step 3, the ionic liquid is [ AAIM ] + [ TFSI ] -, the Ta layer and the artificial antiferromagnetic structure film are coated with the ionic liquid, and gold wire is used to connect the film and the power supply.
7. The method for regulating RKKY on the artificial antiferromagnetic structure using low voltage as claimed in claim 6 is characterized in that in step 3, the low voltage is less than or equal to 4V.
8. The method for regulating RKKY on the artificial antiferromagnetic structure by using low voltage as claimed in claim 1, wherein in the step 3, the ionic liquid is further gelled into ionic glue by the following method:
polymer P (VDF-HFP), ionic liquid, acetone solvent in a 1: 4: 10 and magnetically stirring for at least 1 hour until the mixture becomes a clear and homogeneous liquid; then, the solution was spin-coated on a glass slide to form a solid polymer electrolyte, and after baking in a vacuum oven at 50 ℃, an ionic gel was obtained.
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Publication number Priority date Publication date Assignee Title
SU855569A1 (en) * 1979-07-05 1981-08-15 Предприятие П/Я Г-4605 Method of determining dynamic curves of ferromagnetic material reversal of magnetization
SU1056083A1 (en) * 1980-10-28 1983-11-23 Ростовский-На-Дону Ордена Трудового Красного Знамени Государственный Университет Oscillographic method of segnetoelectric dielectric hysteresis loop determination
EP1611951A1 (en) * 2004-06-17 2006-01-04 Total Petrochemicals Research Feluy Use of ionic liquids for simultaneous deposition of several single site catalyst components on a support to generate hybrid polymers
CN103840198A (en) * 2012-11-20 2014-06-04 中国科学院宁波材料技术与工程研究所 Lithium ion battery gel polymer electrolyte and preparation method thereof
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Title
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Application publication date: 20200505