CN111095494A - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
CN111095494A
CN111095494A CN201880060333.XA CN201880060333A CN111095494A CN 111095494 A CN111095494 A CN 111095494A CN 201880060333 A CN201880060333 A CN 201880060333A CN 111095494 A CN111095494 A CN 111095494A
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Prior art keywords
liquid
substrate
nozzle
droplet
rinse
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CN201880060333.XA
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Chinese (zh)
Inventor
西田崇之
石井淳一
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
    • B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The substrate processing method includes: a cleaning step of cleaning the upper surface of the substrate by ejecting droplets of a processing liquid from a droplet ejection nozzle to a droplet supply position set on the upper surface of the substrate held in a horizontal posture; a rinsing step of, after the cleaning step, discharging a continuously flowing rinse liquid from a rinse liquid nozzle to a predetermined deposition position on the upper surface of the substrate to rinse the upper surface of the substrate with the rinse liquid; and a droplet discharge stopping step of stopping the discharge of the droplets of the processing liquid from the droplet discharge nozzle before the rinse liquid applied to the applying position reaches the droplet supply position when the cleaning step is shifted to the rinsing step.

Description

Substrate processing method and substrate processing apparatus
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus. Examples of the substrate to be processed include a semiconductor wafer, a substrate for a liquid crystal Display device, a substrate for an FPD (Flat Panel Display) such as an organic EL (electroluminescence) Display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask (photomask), a ceramic substrate, and a substrate for a solar cell.
Background
Patent document 1 discloses a substrate processing apparatus that physically cleans the upper surface of a substrate by spraying droplets of a processing liquid onto the upper surface of the substrate. The substrate processing apparatus includes: a spin chuck (spin chuck) that rotates around a vertical rotation axis passing through a center portion of the substrate while holding the substrate horizontally; a spray (spray) nozzle for spraying droplets of the processing liquid onto the upper surface of the substrate held by the spin chuck; and a nozzle moving unit that moves (scans) the spray nozzle above the substrate held by the spin chuck. As the spray nozzle moves, the supply position (collision position) of the droplets on the upper surface of the substrate also moves. Further, the substrate processing apparatus includes: a cover rinse (cover rinse) liquid nozzle for supplying a cover rinse for covering the supply position of the liquid droplet. The cover flush nozzle is provided so as to be movable in association with the movement of the spray nozzle.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-069262.
Disclosure of Invention
Problems to be solved by the invention
In patent document 1, droplets of a processing liquid from a droplet nozzle (spray nozzle) are sprayed onto an upper surface of a substrate while supplying a rinse (ring) liquid onto the upper surface of the substrate and supplying a rinse solution covering the upper surface of the substrate from a rinse solution covering nozzle. Therefore, the liquid film of the processing liquid may be thickened at a position (hereinafter referred to as a droplet supply position) where the droplets of the processing liquid from the droplet nozzle are supplied on the upper surface of the substrate. In this case, liquid splashing may occur as droplets of the processing liquid are ejected to the droplet supply position. Misting (mist) occurs as the liquid splashes. At the droplet supply position on the upper surface of the substrate, the thickness of the liquid film is reduced by spraying droplets of the treatment liquid, and if mist adheres to the droplet supply position, there is a possibility that an upper surface defect such as generation of a watermark (watermark) or generation of particles (particle) may occur.
An object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing liquid splashing and thereby suppressing or preventing the occurrence of surface defects of a substrate.
Means for solving the problems
The invention provides a substrate processing method, which comprises the following steps: a cleaning step of cleaning the upper surface of the substrate by ejecting droplets of a processing liquid from a droplet ejection nozzle to a droplet supply position set on the upper surface of the substrate held in a horizontal posture; a rinsing step of discharging a continuously flowing rinse liquid from a rinse liquid nozzle to a predetermined deposition position on the upper surface of the substrate after the cleaning step, and rinsing the upper surface of the substrate with the rinse liquid; and a droplet discharge stopping step of stopping the discharge of the droplets of the processing liquid from the droplet discharge nozzle before the rinse liquid applied to the applying position reaches the droplet supply position in a process of transition from the cleaning step to the rinsing step.
According to this method, in the process of shifting from the cleaning step of supplying the droplets of the treatment liquid to the droplet supply position to the rinsing step of supplying the continuously flowing rinsing liquid, the ejection of the droplets of the treatment liquid to the droplet supply position can be stopped before the rinsing liquid applied to the applying position reaches the droplet supply position.
The discharge of the treatment liquid droplets is stopped before the rinse liquid applied to the applying position reaches the droplet supply position, that is, before the liquid film at the droplet supply position becomes thick. Therefore, it is possible to avoid ejecting droplets of the treatment liquid onto a thick liquid film. This can suppress or prevent the liquid from splashing when the cleaning process is shifted to the rinsing process. Therefore, it is possible to suppress or prevent the mist caused by the liquid splash from adhering to the droplet supply position on the upper surface of the substrate, and thus it is possible to suppress or prevent the surface defect (generation of watermark or generation of fine particles) of the substrate from occurring.
In one embodiment of the present invention, the droplet discharge nozzle includes: the droplet ejection nozzle includes a plurality of fluid ejection nozzles that generate droplets of a processing liquid by mixing a gas with the processing liquid and eject the generated droplets of the processing liquid to the droplet supply position; the droplet discharge stopping step includes a gas supply stopping step of stopping the supply of the gas to the plurality of fluid nozzles before the rinse liquid applied to the applying position reaches the droplet supply position.
According to this method, when a plurality of fluid nozzles are used as the droplet nozzles, the ejection of the droplets of the processing liquid from the droplet nozzles can be stopped by stopping the supply of the gas to the plurality of fluid nozzles.
In one embodiment of the present invention, the droplet discharge stopping step includes the steps of: before or simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle, the discharge of the droplets of the treatment liquid from the droplet nozzle is stopped.
According to this method, the discharge of the droplets of the treatment liquid from the droplet nozzle can be stopped before or simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle in the process of shifting from the cleaning step of supplying the droplets of the treatment liquid to the droplet supply position to the rinse liquid supply step of supplying the continuously flowing rinse liquid to the liquid surface position. Therefore, it is possible to more reliably avoid the ejection of droplets of the treatment liquid onto a thick liquid film.
In one embodiment of the present invention, the liquid applying position is provided at a central portion of the upper surface of the substrate, and the rinsing step is started in a state where the droplet supply position is arranged in a peripheral region of the substrate.
According to this method, at the start of the rinsing process, the droplet supply position is arranged in the peripheral edge region of the substrate. In the rinsing step, a continuously flowing rinsing liquid is supplied to the central portion of the upper surface of the substrate. In this case, the occurrence of liquid splash can be suppressed or prevented.
In one embodiment of the present invention, the cleaning step includes the steps of: and ejecting the protective liquid from the protective liquid nozzle at an ejection flow rate smaller than an ejection flow rate of the rinse liquid ejected from the rinse liquid nozzle in the rinse step.
According to this method, the protective liquid is ejected from the protective liquid nozzle in the cleaning step. By covering the droplet supply position with the protective liquid, it is possible to prevent the treatment liquid droplets from being directly ejected to the droplet supply position in the cleaning step. In addition, since the ejection flow rate of the protective liquid from the protective liquid nozzle is a small flow rate, liquid splashing is less likely to occur as the treatment liquid droplets are ejected onto the protective liquid supplied from the protective liquid nozzle. This can suppress or prevent the occurrence of liquid splash, and reduce damage to the upper surface (front surface) of the substrate.
Further, since the protective liquid is supplied in the cleaning step, the liquid on the upper surface of the substrate can be prevented from being exhausted. Thus, in the cleaning step, the entire upper surface of the substrate can be continuously covered (capped) with the liquid film.
In one embodiment of the present invention, the protective liquid nozzle is provided so as to be movable in accordance with movement of the droplet supply position.
According to this method, the protective liquid nozzle moves with the movement of the droplet supply position. Thus, the droplet supply position can be covered with the protective liquid discharged from the protective liquid nozzle regardless of the position of the droplet supply position on the upper surface of the substrate.
In one embodiment of the present invention, the protective liquid nozzle includes a vertical nozzle that discharges the protective liquid vertically downward. The rinse liquid nozzle includes an inclined nozzle that discharges the rinse liquid in a direction inclined with respect to the vertical direction.
According to this method, the continuous flow of the rinse liquid discharged from the rinse liquid nozzle is incident on the landing position in a direction inclined with respect to the vertical direction. Since the incidence direction of the rinse liquid to the liquid position is inclined with respect to the vertical direction, the rinse liquid applied to the liquid position is favorably spread on the upper surface of the substrate. This enables the rinse liquid from the rinse liquid nozzle to be distributed over a wide area on the upper surface of the substrate.
On the other hand, the continuously flowing protective liquid from the protective liquid nozzle is incident on the upper surface of the substrate in the vertical direction. Since the incident direction of the protective liquid is the vertical direction, the protective liquid from the protective liquid nozzle is incident on the upper surface of the substrate from the vertical direction, and thus the protective liquid can be satisfactorily charged (retained) on the upper surface of the substrate. Further, by covering the droplet supply position with the liquid-filled protective liquid, damage to the upper surface of the substrate can be reduced more effectively.
In one embodiment of the present invention, the substrate processing method further includes: a slurry coating (paddle) step of forming a slurry-like liquid film that coats the upper surface of the substrate by bringing the substrate into a stationary state or rotating the substrate at a slurry coating speed around a predetermined vertical axis line passing through the center of the substrate after the rinsing step; and a removing step of removing the liquid film from the upper surface of the substrate after the slurry coating step, and including a hole forming step of forming a hole in the liquid film and a step of enlarging the hole. The slurry coating step includes a step of stopping the discharge of the rinse liquid from the rinse liquid nozzle and discharging the protective liquid from the protective liquid nozzle.
According to this method, after the rinsing step, a slurry-like liquid film is formed on the upper surface of the substrate. In addition, the liquid film is removed from the upper surface of the substrate by forming holes in the liquid film and enlarging the holes. The slurry-like liquid film has a large thickness. Therefore, the pores can be enlarged while the liquid film is kept in a liquid lump state. Thus, the liquid film can be removed from the substrate without leaving the processing liquid after the liquid lumps are broken on the upper surface of the substrate.
In this case, it is further preferable that the protective liquid nozzle includes a vertical nozzle that discharges the protective liquid vertically downward, and the rinse liquid nozzle includes an inclined nozzle that discharges the rinse liquid in a direction inclined with respect to the vertical direction. Since the protective liquid nozzle includes the vertical nozzle, the protective liquid from the protective liquid nozzle is incident on the upper surface of the substrate in the vertical direction. Therefore, the protective liquid can be filled satisfactorily, and a slurry-like liquid film can be formed satisfactorily.
In one embodiment of the present invention, the upper surface of the substrate is hydrophobic.
According to this method, when the upper surface of the substrate is hydrophobic, a watermark may be generated due to mist (or droplets) remaining on the upper surface of the substrate. The liquid splash is prevented or suppressed when the substrate is transferred from the cleaning step to the rinsing step, thereby preventing or suppressing the mist from adhering to the droplet supply position on the upper surface of the substrate. Thus, even when the upper surface of the substrate is hydrophobic, generation of a watermark on the upper surface (front surface) of the substrate can be suppressed or prevented.
The present invention provides a substrate processing apparatus, comprising: a chamber; a substrate holding unit that holds a substrate in a horizontal posture inside the chamber; a rotating unit that rotates the substrate held by the substrate holding unit about a vertical axis passing through a central portion of the substrate; a droplet supply unit having a droplet nozzle that ejects a droplet of the processing liquid to a droplet supply position set on an upper surface of the substrate held by the substrate holding unit, thereby supplying the droplet of the processing liquid to the upper surface of the substrate held by the substrate holding unit; a rinse liquid supply unit having a rinse liquid nozzle fixed inside the chamber and supplying a rinse liquid to the upper surface of the substrate by discharging a continuously flowing rinse liquid to a predetermined landing position on the upper surface of the substrate; and a control device that controls the droplet supply unit and the rinse liquid supply unit. The control device performs: a cleaning step of discharging the droplets of the processing liquid from the droplet discharge nozzles to the droplet supply positions by the droplet supply unit to clean the upper surface of the substrate; a rinsing step of discharging a continuously flowing rinse liquid from the rinse liquid nozzle to the upper surface of the substrate by the droplet supply unit after the cleaning step, and rinsing the upper surface of the substrate with the rinse liquid; and a droplet discharge stopping step of stopping the discharge of the droplets of the processing liquid from the droplet discharge nozzle before the rinse liquid applied to the applying position reaches the droplet supply position in a process of transition from the cleaning step to the rinsing step.
According to this configuration, in the process of shifting from the cleaning step of supplying the droplets of the treatment liquid to the droplet supply position to the rinsing step of supplying the continuously flowing rinsing liquid, the ejection of the droplets of the treatment liquid to the droplet supply position can be stopped before the rinsing liquid applied to the applying position reaches the droplet supply position.
The discharge of the treatment liquid droplets is stopped before the rinse liquid applied to the applying position reaches the droplet supply position, that is, before the liquid film in the droplet supply position becomes thick. Therefore, it is possible to avoid ejecting droplets of the treatment liquid onto a thick liquid film. This can suppress or prevent the occurrence of liquid splash when the cleaning process is shifted to the rinsing process. Therefore, it is possible to suppress or prevent the mist caused by the liquid splash from adhering to the droplet supply position on the upper surface of the substrate, and thus it is possible to suppress or prevent the surface defect (generation of watermark or generation of fine particles) of the substrate from occurring.
In one embodiment of the present invention, the droplet discharge nozzle includes: the droplet ejection nozzle includes a plurality of fluid ejection nozzles that generate droplets of a processing liquid by mixing a gas with the processing liquid and eject the generated droplets of the processing liquid to the droplet supply position; the controller executes a gas supply stopping step in which the supply of the gas to the plurality of fluid nozzles is stopped before the rinse liquid applied to the applying position reaches the droplet supply position, in the droplet ejection stopping step.
According to this configuration, when the plurality of fluid nozzles are used as the droplet nozzles, the supply of the gas to the plurality of fluid nozzles is stopped, whereby the ejection of the droplets of the processing liquid from the droplet nozzles can be stopped.
In one embodiment of the present invention, the control device performs the following steps in the droplet ejection stopping step: before or simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle, the discharge of the droplets of the treatment liquid from the droplet nozzle is stopped.
According to this configuration, during the transition from the cleaning step of supplying the droplets of the treatment liquid to the droplet supply position to the rinse liquid supply step of supplying the rinse liquid continuously flowing toward the liquid position, the discharge of the droplets of the treatment liquid from the droplet nozzle can be stopped before or simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle. Therefore, it is possible to more reliably avoid the ejection of droplets of the treatment liquid onto a thick liquid film.
In one embodiment of the present invention, the substrate processing apparatus further includes: and a supply position moving unit configured to move the droplet supply position within the upper surface of the substrate. The liquid applying position is provided at a central portion of the upper surface of the substrate. The control device may further control the supply position moving means, and the control device may start the rinsing step in a state where the droplet supply position is arranged in the peripheral edge region of the substrate by the supply position moving means.
According to this configuration, at the start of the rinsing process, the droplet supply position is arranged in the peripheral edge region of the substrate. In the rinsing step, a continuously flowing rinsing liquid is supplied to the central portion of the upper surface of the substrate. In this case, the occurrence of liquid splash can be suppressed or prevented.
In one embodiment of the present invention, the substrate processing apparatus further includes: and a protective liquid supply unit which supplies a protective liquid to the upper surface of the substrate and has a protective liquid nozzle which ejects the protective liquid to the upper surface of the substrate. Further, the control device controls the protective liquid supply unit, and in the cleaning step, the control device performs: the protective liquid supply unit discharges the protective liquid from the protective liquid nozzle at a discharge flow rate smaller than a discharge flow rate of the rinse liquid discharged from the rinse liquid nozzle in the rinse step.
According to this configuration, the protective liquid is ejected from the protective liquid nozzle in the cleaning step. By covering the droplet supply position with the protective liquid, it is possible to prevent the treatment liquid droplets from being directly ejected to the droplet supply position in the cleaning step. In addition, since the ejection flow rate of the protective liquid from the protective liquid nozzle is a small flow rate, liquid splashing is less likely to occur as the treatment liquid droplets are ejected onto the protective liquid supplied from the protective liquid nozzle. This can suppress or prevent the occurrence of liquid splash, and reduce damage to the upper surface (front surface) of the substrate.
Further, since the protective liquid is supplied in the cleaning step, the liquid on the upper surface of the substrate can be prevented from being exhausted. Thus, in the cleaning step, the entire upper surface of the substrate can be continuously covered (capped) with the liquid film.
In one embodiment of the present invention, the substrate processing apparatus further includes: and a supply position moving unit configured to move the droplet supply position within the upper surface of the substrate. The protective liquid nozzle is provided so as to be movable in accordance with the movement of the droplet supply position by the supply position moving means.
According to this configuration, the protective liquid nozzle moves along with the movement of the droplet supply position. Thus, the droplet supply position can be covered with the protective liquid discharged from the protective liquid nozzle regardless of the position of the droplet supply position on the upper surface of the substrate.
In one embodiment of the present invention, the protective liquid nozzle includes a vertical nozzle that discharges the protective liquid vertically downward. The rinse liquid nozzle includes an inclined nozzle that discharges the rinse liquid in a direction inclined with respect to the vertical direction.
According to this configuration, the continuous flow of the rinse liquid discharged from the rinse liquid nozzle is incident on the landing position in a direction inclined with respect to the vertical direction. Since the incidence direction of the rinse liquid to the liquid position is inclined with respect to the vertical direction, the rinse liquid applied to the liquid position is favorably spread on the upper surface of the substrate. This enables the rinse liquid from the rinse liquid nozzle to be distributed over a wide area on the upper surface of the substrate.
On the other hand, the continuously flowing protective liquid from the protective liquid nozzle is incident on the upper surface of the substrate in the vertical direction. Since the incident direction of the protective liquid is the vertical direction, the protective liquid from the protective liquid nozzle is incident on the upper surface of the substrate from the vertical direction, and thus the protective liquid can be satisfactorily poured on the upper surface of the substrate. Further, by covering the droplet supply position with the liquid-filled protective liquid, damage to the upper surface of the substrate can be reduced more effectively.
In one embodiment of the present invention, the control device further controls the rotation unit, and the control device further performs: a slurry coating step of forming a slurry-like liquid film for coating the upper surface of the substrate by at least bringing the substrate into a stationary state by the rotation unit or rotating the substrate around the vertical axis at a slurry coating speed after the cleaning step; and a removing step of removing the liquid film from the upper surface of the substrate by at least the rotating unit after the slurry coating step, and including a hole forming step of forming a hole in the liquid film and a step of expanding the hole. The control device performs a step of stopping the discharge of the rinse liquid from the rinse liquid nozzle and discharging the protective liquid from the protective liquid nozzle in the slurry coating step.
According to this structure, after the cleaning step, a slurry-like liquid film is formed on the upper surface of the substrate. In addition, the liquid film is removed from the upper surface of the substrate by forming holes in the liquid film and enlarging the holes. The slurry-like liquid film has a large thickness. Therefore, the pores can be enlarged while the liquid film is kept in a liquid lump state. Thus, the liquid film can be removed from the substrate without leaving the processing liquid after the liquid lumps are broken on the upper surface of the substrate.
In this case, it is further preferable that the protective liquid nozzle includes a vertical nozzle that discharges the protective liquid vertically downward, and the rinse liquid nozzle includes an inclined nozzle that discharges the rinse liquid in a direction inclined with respect to the vertical direction. In this case, since the protective liquid nozzle includes the vertical nozzle, the protective liquid from the protective liquid nozzle is incident on the upper surface of the substrate in the vertical direction. Therefore, the protective liquid can be filled satisfactorily, and a slurry-like liquid film can be formed satisfactorily.
In one embodiment of the present invention, the upper surface of the substrate is hydrophobic.
According to this structure, when the upper surface of the substrate is hydrophobic, a watermark may be generated due to mist (or droplets) remaining on the upper surface of the substrate. The liquid splash is prevented or suppressed when the substrate is transferred from the cleaning step to the rinsing step, thereby preventing or suppressing the mist from adhering to the droplet supply position on the upper surface of the substrate. Thus, even when the upper surface of the substrate is hydrophobic, generation of a watermark on the upper surface (front surface) of the substrate can be suppressed or prevented.
The foregoing and other objects, features and effects of the present invention will be more apparent from the following description of the embodiments with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention, as viewed from above.
Fig. 2 is a schematic view of the inside of a processing unit included in the substrate processing apparatus as viewed in a horizontal direction.
Fig. 3 is a sectional view for explaining the structure of a droplet discharging nozzle included in the processing unit.
Fig. 4 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
Fig. 5 is a flowchart for explaining the contents of an example of substrate processing performed by the processing unit.
Fig. 6 is a timing chart (timing chart) for explaining the detailed procedure of the cleaning process (step S4 in fig. 5) and the rinsing process (step S5 in fig. 5) performed in the processing unit.
Fig. 7A to 7B are schematic views showing a state of the periphery of the substrate when the substrate processing example is executed.
Fig. 7C to 7D are schematic views illustrating a next process of fig. 7B.
Fig. 7E to 7G are schematic views illustrating a next process of fig. 7D.
Fig. 7H to 7J are schematic views illustrating a next process of fig. 7G.
Fig. 8A is a schematic cross-sectional view of a droplet nozzle.
Fig. 8B shows a schematic top view of a droplet nozzle.
Detailed Description
Fig. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention, as viewed from above. The substrate processing apparatus 1 is a single wafer type apparatus for processing substrates W such as silicon wafers one by one. In the present embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing the substrate W with the processing liquid and the rinse liquid; a load port (load port) LP on which a carrier (carrier) C for accommodating a plurality of substrates W processed by the processing unit 2 is placed; an Indexer robot (indexerrobot) IR and a substrate transfer robot CR that transfer the substrate W between the load port LP and the processing unit 2; and a control device 3 for controlling the substrate processing apparatus 1. The indexer robot IR transports the substrate W between the carrier C and the substrate transport robot CR. The substrate transfer robot CR transfers the substrate W between the indexer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, the same configuration.
Fig. 2 is a schematic sectional view for explaining a configuration example of the process unit 2.
The processing unit 2 includes: a box-shaped chamber 4; a spin chuck (substrate holding unit) 5 that holds one substrate W in a horizontal posture in the chamber 4 and rotates the substrate W around a vertical rotation axis a1 passing through the center of the substrate W; a droplet supply unit 6 for supplying droplets of the processing liquid (hereinafter, sometimes referred to as processing liquid droplets) onto the upper surface of the substrate W held by the spin chuck 5; a rinse liquid supply unit 7 for supplying a rinse liquid to the upper surface of the substrate W held by the spin chuck 5; and a protective liquid supply unit 8 for supplying a protective liquid to the upper surface of the substrate W held by the spin chuck 5. The processing unit 2 further comprises: a gas supply unit 9 for supplying one of the inert gases as a gasExemplary Nitrogen gas (N)2) Spray-attaching to the upper surface of the substrate W; and a cylindrical processing cover 10 surrounding the spin chuck 5.
The chamber 4 includes a box-shaped partition wall 12 that accommodates the spin chuck 5 and the like.
As the spin chuck 5, a chuck of a chucking type is used which holds the substrate W horizontally by chucking the substrate W in a horizontal direction. Specifically, the spin chuck 5 includes: a spin motor (rotation unit) 15; a spin shaft 16 integrated with a drive shaft of the spin motor 15; and a disk-shaped spin base 17 attached substantially horizontally to the upper end of the spin axis 16.
The spin base 17 includes a horizontal circular upper surface 17a having an outer diameter larger than that of the substrate W. A plurality of (3 or more, for example, 6) holding members 18 are arranged at the peripheral edge portion of the upper surface 17 a. The plurality of clamp members 18 are disposed at a circumference of the spin base 17 corresponding to the outer peripheral shape of the substrate W at appropriate intervals, for example, at equal intervals.
The spin chuck 5 is not limited to a chuck type spin chuck, and for example, a vacuum chuck (vacuum chuck) may be used which holds the substrate W in a horizontal posture by vacuum-sucking the back surface of the substrate W and rotates the substrate W held by the spin chuck 5 around a vertical rotation axis in this state.
The droplet supply unit 6 includes: a droplet nozzle (a plurality of fluid nozzles) 19 that ejects droplets of the processing liquid onto the upper surface of the substrate W held by the spin chuck 5; a nozzle arm 20 holding the droplet discharge nozzle 19 at a tip end portion; and a first nozzle moving unit (supply position moving unit) 21 that rotates the nozzle arm 20 to move the droplet nozzle 19. The first nozzle moving unit 21 swings the nozzle arm 20 so that the droplet nozzle 19 horizontally swings along a trajectory passing through the center portion of the upper surface of the substrate W in a plan view.
The droplet nozzle 19 is in the form of a plurality of fluid nozzles (spray nozzles, more specifically, two fluid nozzles) that discharge minute droplets of the processing liquid. A fluid supply unit that supplies the processing liquid and the gas to the droplet nozzle 19 is connected to the droplet nozzle 19. The fluid supply unit includes: a treatment liquid pipe 25 for supplying a treatment liquid of a liquid at normal temperature from a treatment liquid supply source to the droplet nozzle 19; and a gas pipe 26 for supplying a gas from a gas supply source to the droplet nozzle 19.
Examples of the treatment liquid supplied to the droplet nozzle 19 include water and a cleaning chemical. The water is, for example, deionized water (DIW), but is not limited to DIW, and may be any of carbonated water, electrolytic ion water, hydrogen-containing water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10ppm to 100 ppm). As the cleaning chemical, SC1(Standard clean-1; first Standard rinse solution containing NH) can be exemplified4OH and H2O2Liquid of (2)) or ammonia water (containing NH4OH) or an acidic solution.
A treatment liquid valve 27 is attached to the treatment liquid pipe 25, and the treatment liquid valve 27 switches between discharging the treatment liquid from the treatment liquid pipe 25 to the droplet nozzle 19 and stopping the supply of the treatment liquid.
A droplet-use gas valve 29 is attached to the gas pipe 26, and the droplet-use gas valve 29 switches between ejecting the gas from the gas pipe 26 to the droplet nozzle 19 and stopping the supply of the gas. As the gas supplied to the droplet nozzle 19, nitrogen (N) gas can be exemplified as an example2) However, an inert gas other than nitrogen, such as dry air or clean air, may be used.
Fig. 3 is a sectional view schematically showing the structure of the liquid droplet ejection nozzle 19.
As shown in fig. 3, the droplet ejection nozzle 19 has a substantially cylindrical outer shape. The droplet nozzle 19 includes an outer cylinder 36 constituting a housing (casting) and an inner cylinder 37 embedded in the inner portion of the outer cylinder 36.
The outer cylinder 36 and the inner cylinder 37 are coaxially disposed on a common center axis CL, and are connected to each other. The inner space of the inner cylinder 37 is a linear treatment liquid passage 38 through which the treatment liquid from the treatment liquid pipe 25 flows. Further, a cylindrical gas flow path 39 through which the gas supplied from the gas pipe 26 flows is formed between the outer tube 36 and the inner tube 37.
The treatment liquid channel 38 is opened at the upper end of the inner tube 37 to serve as a treatment liquid inlet 40. The treatment liquid from the treatment liquid pipe 25 is introduced into the treatment liquid channel 38 through the treatment liquid inlet 40. The treatment liquid channel 38 is opened at the lower end of the inner tube 37 and serves as a circular treatment liquid spout 41 having a center on the center axis CL. The treatment liquid introduced into the treatment liquid channel 38 is discharged from the treatment liquid discharge port 41.
The gas flow path 39 is a cylindrical gap having a central axis common to the central axis CL, is closed at the upper end portions of the outer tube 36 and the inner tube 37, and has an annular gas discharge port 42 opened at the lower end portions of the outer tube 36 and the inner tube 37, and has a center on the central axis CL and surrounds the treatment liquid discharge port 41. The flow passage area of the lower end portion of the gas flow passage 39 is smaller than the intermediate portion in the longitudinal direction of the gas flow passage 39, and the diameter of the lower end portion of the gas flow passage 39 becomes smaller as it goes downward. Further, a gas inlet 43 communicating with the gas flow path 39 is formed in an intermediate portion of the outer tube 36.
The gas pipe 26 is connected to the gas inlet 43 so as to penetrate the outer tube 36, and the internal space of the gas pipe 26 communicates with the gas flow path 39. The gas from the gas pipe 26 is introduced into the gas flow path 39 through the gas introduction port 43 and is discharged from the gas discharge port 42.
By opening the droplet gas valve 29 to discharge the gas from the gas discharge port 42 and opening the treatment liquid valve 27 to discharge the treatment liquid from the treatment liquid discharge port 41, minute droplets of the treatment liquid can be generated by colliding (mixing) the gas and the treatment liquid in the vicinity of the droplet nozzle 19, and the treatment liquid can be discharged in a spray form. In this embodiment, the treatment liquid ejection port 41 and the gas ejection port 42 form an ejection portion that ejects droplets of the treatment liquid.
As shown in fig. 2, the rinse liquid supply unit 7 includes a rinse liquid nozzle 44. The rinse liquid nozzle 44 is, for example, a straight nozzle (straight nozzle) that discharges a liquid in a continuous flow state, and the rinse liquid nozzle 44 is fixedly disposed above the spin chuck 5 such that a discharge port of the rinse liquid nozzle 44 faces the center portion of the upper surface of the substrate W. The rinse liquid nozzle 44 is an inclined nozzle that discharges the rinse liquid in a direction inclined in the vertical direction. That is, the incident direction D1 of the liquid landing position P1 is inclined with respect to the vertical direction. The inclination angle of the incident direction D1 with respect to the vertical direction is set to a predetermined angle in the range of 20 degrees to 30 degrees, for example. The rinse liquid from the rinse liquid supply source is supplied to the rinse liquid nozzle 44 through the rinse liquid valve 45. When the rinse liquid valve 45 is opened, the continuously flowing rinse liquid supplied to the rinse liquid nozzle 44 is discharged from a discharge port provided at the tip of the rinse liquid nozzle 44. When the rinse liquid valve 45 is closed, the discharge of the rinse liquid from the rinse liquid nozzle 44 is stopped.
The rinse liquid sprayed from the rinse liquid nozzle 44 is water. That is, the kind of liquid discharged from the rinse liquid nozzle 44 may be the same kind of liquid as the treatment liquid discharged from the droplet nozzle 19, or may be a different kind of liquid.
As shown in fig. 2, the protective liquid supply unit 8 includes a protective liquid nozzle 46. The protective liquid nozzle 46 is, for example, a straight nozzle that discharges liquid in a continuous flow state. The protective liquid nozzle 46 is a vertical nozzle that discharges the protective liquid vertically downward. That is, the protective liquid nozzle 46 has a vertically downward discharge port 46a at the tip. The protective liquid from the protective liquid supply source is supplied to the protective liquid nozzle 46 via the protective liquid valve 47. When the protective liquid valve 47 is opened, the protective liquid supplied to the protective liquid nozzle 46 in a continuous flow is discharged from the discharge port 46a of the protective liquid nozzle 46. When the protective liquid valve 47 is closed, the discharge of the treatment liquid from the protective liquid nozzle 46 is stopped. In this embodiment, the protective liquid discharged from the protective liquid nozzle 46 is, for example, water.
As shown in fig. 2, the protective liquid nozzle 46 is attached to the nozzle arm 20. That is, the protective liquid nozzle 46 is supported by the nozzle arm 20 common to the liquid droplet nozzles 19. The protective liquid nozzle 46 is disposed inside the droplet nozzle 19 in the radial direction of rotation of the substrate W. The first nozzle moving unit 21 swings the nozzle arm 20, so that the droplet nozzle 19 and the protective liquid nozzle 46 horizontally swing along a trajectory passing through the center portion of the upper surface of the substrate W in a plan view. In other words, the droplet supply position DA (see fig. 7C and the like) of the processing liquid droplet from the droplet nozzle 19 on the upper surface of the substrate W is provided so as to be movable in accordance with the movement. Thus, the droplet supply position DA can be covered with the protective liquid discharged from the protective liquid nozzle 46 regardless of the position of the droplet supply position DA on the upper surface of the substrate W. The protective liquid nozzle 46 is disposed at substantially the same height as the droplet nozzle 19.
As shown in fig. 2, the gas supply unit 9 includes: a gas nozzle 49 for jetting gas (N) downward2) (ii) a A second nozzle moving unit 50 for moving the gas nozzle 49; a gas pipe 51 connected to the gas nozzle 49; and a gas valve 52 attached to the gas pipe 51 and switching between supplying the organic solvent vapor from the gas pipe 51 to the gas nozzle 49 and stopping supplying the organic solvent vapor. When the gas valve 52 is opened, the inert gas from the gas supply source is ejected downward from the ejection port 49a of the gas nozzle 49.
As shown in fig. 2, the process cover 10 is disposed outside the substrate W held by the spin chuck 5 (in a direction away from the rotation axis a 1). The process enclosure 10 surrounds the spin base 17. When a liquid such as a processing liquid, a rinse liquid, or a protective liquid is supplied to the substrate W while the spin chuck 5 rotates the substrate W, the liquid supplied to the substrate W is spun down around the substrate W. When these liquids are supplied to the substrate W, the upper end portion 10a of the process cover 10 is disposed above the spin base 17. Therefore, the liquid discharged to the periphery of the substrate W is received by the processing hood 10. Then, the liquid received by the treatment cover 10 is sent to a recovery device or a waste liquid device, not shown.
Fig. 4 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1.
The control device 3 controls the operations of the spin motor 15, the first and second nozzle moving units 21 and 50, and the like according to a predetermined program. The controller 3 controls the treatment liquid valve 27, the droplet gas valve 29, the rinse liquid valve 45, the protection liquid valve 47, the gas valve 52, and the like.
Fig. 5 is a flowchart for explaining the contents of an example of substrate processing performed by the processing unit. Fig. 6 is a timing chart for explaining the detailed procedure of the cleaning process (step S4 in fig. 5) and the rinsing process (step S5 in fig. 5) performed in the process unit 2. Fig. 7A to 7J are schematic views showing a state of the periphery of the substrate W when the example of the substrate processing is performed.
Hereinafter, a substrate processing example will be described with reference to fig. 1 to 6. And with reference to fig. 7A to 7J as appropriate.
The first substrate processing example is a cleaning process for removing foreign matter (particles) from the surface of a hydrophobic substrate W. Examples of the surface of the substrate W having water repellency include titanium nitride, polysilicon, and a low-k (low dielectric constant) film.
The unprocessed substrate W is carried into the processing unit 2 from the carrier C and into the chamber 4 by the indexer robot IR and the substrate transfer robot CR (step S1 in fig. 5: the substrate W is carried in), and the substrate W is transferred to the spin chuck 5 with its front surface (surface to be cleaned) facing upward, and is held by the spin chuck 5. Before the substrate W is carried in, the droplet nozzle 19, the protective liquid nozzle 46, and the gas nozzle 49 are retracted to retracted positions provided on the side of the spin chuck 5.
After the substrate transfer robot CR is retracted out of the processing unit 2, the control device 3 controls the spin motor 15 to start rotating the substrate W (step S2 in fig. 5). After the substrate W is raised to a predetermined liquid processing speed (in a range of about 50rpm to about 1000rpm, for example, about 500rpm), the liquid processing speed is maintained. When the rotation speed of the substrate W reaches the liquid processing speed, the control device 3 performs a coating process (step S3 of fig. 5).
The covering process S3 is a process for forming a liquid film that protects the upper surface of the substrate W from being directly ejected by droplets of the treatment liquid in the cleaning process S4 that is performed next. Since the upper surface of the substrate W is hydrophobic, the entire upper surface of the substrate W must be covered (entirely covered) with the liquid film in the covering step S3. In this embodiment, a liquid film is formed using a liquid (i.e., a rinse liquid) discharged from the rinse liquid nozzle 44.
Specifically, as shown in fig. 7A, in the covering step S3, the controller 3 opens the rinse liquid valve 45 to discharge the rinse liquid from the rinse liquid nozzle 44 toward the upper surface of the substrate W. The discharge flow rate of the rinse liquid discharged from the rinse liquid nozzle 44 is a relatively large flow rate (for example, about 1000 (ml/min)). The rinse liquid discharged from the rinse liquid nozzle 44 is applied to the applying position P1. Flows toward the peripheral edge on the upper surface of the substrate W. In particular, in this embodiment, the incident direction D1 is inclined with respect to the vertical direction, and therefore can be extended over a wide range on the upper surface of the substrate W. This makes it possible to easily form the liquid film 61 covering the entire upper surface of the substrate W. The liquid film 61 functions as a protective film for protecting the upper surface of the substrate W from direct ejection of droplets of the processing liquid in the cleaning step S4 to be performed next. In the covering step S3, the controller 3 controls the first nozzle moving unit 21 to move the droplet nozzle 19 and the protective liquid nozzle 46 from the retracted positions to above the substrate W. Specifically, the droplet nozzle 19 and the protective liquid nozzle 46 are arranged at the peripheral edge position Pe. The peripheral edge position Pe is a position of the droplet nozzle 19 and the protective liquid nozzle 46 that satisfies the following condition: the droplet supply position DA for the droplets from the droplet nozzle 19 is arranged in the peripheral edge region Re of the upper surface of the substrate W in plan view. In the present specification, the peripheral edge region Re of the upper surface of the substrate W is an annular region having a width of about 0.1mm to 10mm from the peripheral edge of the substrate W.
When a predetermined time has elapsed from the start of the coating step S3 (i.e., from the start of the discharge of the rinse liquid from the rinse liquid nozzle 44), the controller 3 closes the rinse liquid valve 45 to stop the supply of the rinse liquid onto the upper surface of the substrate W. Thereby, the covering step S3 ends.
Next, the control device 3 executes a cleaning process shown in fig. 7B (step S4 of fig. 5). The cleaning step S4 is a step of cleaning the upper surface of the substrate W by supplying droplets of the processing liquid from the droplet nozzle 19 to the upper surface of the substrate W. Specifically, the controller 3 opens the treatment liquid valve 27 and the gas for droplet valve 29. Thereby, the droplets of the processing liquid and nitrogen gas, which is an example of a gas, are simultaneously supplied to the droplet nozzle 19, and the supplied droplets of the processing liquid and nitrogen gas are mixed in the vicinity of an ejection port (processing liquid ejection port 41 (see fig. 2)) outside the droplet nozzle 19. This forms a jet of fine droplets of the treatment liquid, and the jet of treatment liquid droplets is discharged from the droplet discharge nozzle 19. Therefore, a circular droplet supply position DA is formed on the upper surface of the substrate W. Since a large number of droplets of the treatment liquid are ejected from the droplet ejection nozzle 19 at the droplet supply position DA, foreign substances (particles and the like) adhering to the droplet supply position DA can be physically removed (physically cleaned) by collision of the droplets of the treatment liquid.
Further, the controller 3 opens the protective liquid valve 47 to discharge the protective liquid from the protective liquid nozzle 46. Since the protective liquid from the protective liquid nozzle 46 is incident on the upper surface of the substrate W from the vertical direction, the protective liquid can be satisfactorily poured on the upper surface of the substrate W. The landing position of the protective liquid from the protective liquid nozzle 46 is close to the droplet supply position DA, and therefore the droplet supply position DA is covered with the protective liquid of the filling liquid (charge). The droplet supply position DA is covered with the protective liquid from the protective liquid nozzle 46, and thus the treatment liquid droplet can be prevented from being directly ejected to the droplet supply position DA in the cleaning step S4. In this embodiment, the supply of the protective solution from the protective solution nozzle 46 can continue the treatment while holding (i.e., covering) the liquid film 61 formed in the covering step S3. That is, the droplets of the processing liquid are ejected to the droplet supply position DA in a state where the entire upper surface of the substrate W is covered with the liquid film. This can prevent or suppress the foreign matter (particles, etc.) from adhering to the substrate W again.
In addition, the ejection flow rate of the protective liquid from the protective liquid nozzle 46 is a small flow rate (for example, about 400 (ml/min)). Therefore, the liquid film 61 does not become excessively thick at the droplet supply position DA. Therefore, the occurrence of liquid splashing can be suppressed or prevented, thereby more effectively reducing damage to the upper surface of the substrate W.
Further, the protective liquid supplied in the cleaning step S4 prevents the liquid on the upper surface of the substrate W from being depleted. Thus, in the cleaning step S4, the entire upper surface of the substrate W can be continuously covered (capped) with the liquid film.
In the cleaning step S4, the controller 3 reciprocates (half-scans) the droplet nozzles 19 and the protective liquid nozzles 46 between the peripheral edge position Pe and the center position Pc a plurality of times along a trajectory passing through the center portion of the upper surface of the substrate W by the first nozzle moving unit 21 while rotating the substrate W at the liquid processing speed. The center position Pc is a position of the droplet nozzle 19 and the protective liquid nozzle 46 that satisfies the following conditions: the droplet supply position DA of the droplets from the droplet nozzle 19 is arranged at the center of the upper surface of the substrate W.
When the half-scan of the droplet supply position DA is performed a predetermined number of lines, the cleaning process S4 ends. As shown in fig. 7C, at the end of the cleaning step S4, the controller 3 moves the droplet nozzle 19 and the protective liquid nozzle 46 from the center position Pc to the peripheral position Pe while continuing to eject the treatment liquid droplets from the droplet nozzle 19. Then, in a state where the droplet nozzle 19 and the protective liquid nozzle 46 are arranged at the peripheral edge position Pe, as shown in fig. 7D, the controller 3 closes the treatment liquid valve 27 and the droplet gas valve 29, and stops the discharge of the treatment liquid droplets from the droplet nozzle 19. Thereby, the cleaning step S4 ends.
After the cleaning step S4, a rinsing step of supplying a rinse liquid to the substrate W is performed (step S5 in fig. 5). Specifically, as shown in fig. 7D, the controller 3 opens the rinse liquid valve 45 to discharge the rinse liquid continuously flowing from the rinse liquid nozzle 44 toward the center portion of the upper surface of the substrate W. The rinse liquid discharged from the rinse liquid nozzle 44 is applied to an application position P1 provided at the center of the upper surface of the substrate W. The rinse liquid applied to the applying position P1 flows toward the peripheral end of the substrate W on the upper surface of the substrate W by the centrifugal force generated by the rotation of the substrate W.
As shown by the solid line in fig. 6, in the process of the transition from the cleaning step S4 to the rinsing step S5, the discharge of the droplets of the treatment liquid from the droplet nozzle 19 to the droplet supply position DA is stopped before the rinse liquid is discharged from the rinse liquid nozzle 44 to the liquid position P1. As shown by the alternate long and short dash line in fig. 6, the discharge of the treatment liquid droplets from the droplet nozzle 19 to the droplet supply position DA may be stopped simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle 44 to the liquid position P1 in the process of the transition from the cleaning step S4 to the rinsing step S5.
In the flushing step S5, the controller 3 stops the discharge of the treatment liquid droplets from the droplet nozzles 19, and moves the droplet nozzles 19 and the protective liquid nozzles 46 from the peripheral edge position Pe to the center position Pc. The droplet nozzle 19 and the protective liquid nozzle 46 that have reached the center position Pc are stopped at the center position Pc.
Thus, in the cleaning step, the entire upper surface of the substrate can be continuously covered (capped) with the liquid film. In the rinsing step S5, the liquid film 61 is also formed so as to cover the entire upper surface of the substrate W with the liquid film. When a predetermined period of time has elapsed from the start of the rinse step S5, the controller 3 closes the rinse liquid valve 45 to stop the discharge of the rinse liquid from the rinse liquid nozzle 44.
After a predetermined period of time has elapsed from the start of supplying the rinse liquid, a slurry coating step S6 is performed to form a liquid film 62 of slurry-like (paddle-shaped) on the upper surface of the substrate W. Specifically, the protective liquid is discharged from the protective liquid nozzle 46 disposed at the center position Pc. The controller 3 controls the spin motor 15 to gradually reduce the rotation speed of the substrate W from the liquid processing speed to the slurry speed (zero or a low rotation speed of about 40rpm or less, for example, about 10 rpm). Then, the rotation speed of the substrate W is maintained at the pasting speed (pasting step (step S6 in fig. 5)). As a result, as shown in fig. 7E, a liquid film 62 covering the entire upper surface of the substrate W (a slurry-like liquid film 62 covering the entire upper surface of the substrate W is formed) is supported in a slurry-like state on the upper surface of the substrate W. In this state, the centrifugal force acting on the slurry-like liquid film 62 is smaller than the surface tension acting between the liquid contained in the liquid film 62 and the upper surface of the substrate W, or the centrifugal force is substantially equal to or smaller than the surface tension. The deceleration of the substrate W weakens the centrifugal force of the liquid acting on the substrate W, thereby reducing the amount of the liquid discharged from the substrate W. Thereby, the thickness of the slurry-like liquid film 62 becomes larger than the thickness of the liquid film 61 of the rinse liquid in the rinsing step S5. That is, the thickness of the liquid film 62 in the slurry coating step S6 can be sufficiently increased. After the slurry-like liquid film 62 is formed on the upper surface of the substrate W, the controller 3 closes the protective liquid valve 47 to stop the ejection of the protective liquid from the protective liquid nozzle 46. This completes the coating step S6. The controller 3 closes the protective liquid valve 47 to stop the ejection of the protective liquid from the protective liquid nozzle 46. Then, as shown in fig. 7F, the controller 3 controls the first nozzle moving unit 21 to return the droplet nozzle 19 and the protective liquid nozzle 46 to the retracted positions. As shown in fig. 7F, the controller 3 controls the second nozzle transfer unit 50 to dispose the gas nozzle 49 above the center of the upper surface of the substrate W.
Next, the controller 3 performs a removal step of removing the slurry-like liquid film 62 from the upper surface of the substrate W. The elimination procedure comprises: a drilling step (step S7 in fig. 5) and an enlarged hole step (step S8 in fig. 5). The hole forming process S7 is performed first, and the enlarged hole process S8 is performed after the hole forming process S7 is completed.
As shown in fig. 7G, the punching step S7 is a step of forming a circular hole (i.e., a dry region) 63 for removing the liquid in the center of the slurry-like liquid film 62. Specifically, the controller 3 opens the gas valve 52 and discharges the inert gas downward from the gas nozzle 49 toward the center portion of the upper surface of the substrate W. The liquid in the center of the slurry-like liquid film 62 is blown off and removed by the spraying pressure (gas pressure) of the inert gas. Thereby, a hole 63 is formed in the center of the upper surface of the substrate W.
The enlarging hole process S8 is performed after the hole forming process S7.
In the hole enlarging step S8, the control device 3 controls the spin motor 15 to increase the rotation speed of the substrate W to a predetermined hole forming speed (e.g., 200 rpm). At this time, as shown in fig. 7H, the holes 63 start to expand by the centrifugal force of the slurry-like liquid film 62 acting on the substrate W. After the hole forming speed is reached, the controller 3 gradually increases the rotation speed of the substrate W to 2400rpm, so that the holes 63 are further enlarged as shown in fig. 7I, and finally the holes 63 are enlarged over the entire area of the substrate W as shown in fig. 7J. Thereby, the slurry-like liquid film 62 is entirely discharged to the outside of the substrate W. The slurry-like liquid film 62 is maintained in a liquid block state throughout the period of enlargement of the holes 63. That is, the slurry-like liquid film 62 can be removed from the substrate W without leaving any liquid on the upper surface of the substrate W after the liquid lumps are broken. The liquid film 62 is not broken up in the process of enlarging the hole 63, and the slurry-like liquid film 62 is thick. That is, by performing the removing step after the slurry coating step S6, the liquid film 62 can be prevented from being broken in the liquid cake in the hole enlarging step S8.
After the hole 63 is enlarged over the entire upper surface of the substrate W, the controller 3 ends the hole enlarging step S8. Specifically, the controller 3 closes the gas valve 52 to stop the ejection of the inert gas from the gas nozzle 49.
After the hole enlarging step S8 is completed, the control device 3 performs a spinning (spinning) step (step S9 in fig. 5). Specifically, the controller 3 further accelerates the substrate W to a spin-drying speed (for example, about 2400 rpm). Thereby, water on the upper surface of the substrate is spun off.
When a predetermined period of time has elapsed since the start of the spin drying step S9, the control device 3 controls the spin motor 15 to stop the rotation of the spin chuck 5 (i.e., the rotation of the substrate W) (step S10 in fig. 5). Then, the substrate transfer robot CR enters the processing unit 2, and carries out the processed substrate W to the outside of the processing unit 2 (step S11 in fig. 5). The substrate W is transferred from the substrate transfer robot CR to the indexer robot IR, and is stored in the carrier C by the indexer robot IR.
However, when the upper surface of the substrate W is hydrophobic, if a small amount of residual liquid remains on the upper surface of the substrate W, a watermark may be generated on the surface of the substrate W after drying. Further, if the residual liquid remains, it also becomes a factor of generating particles on the surface of the dried substrate W.
As described in the present embodiment, when the upper surface of the substrate W is processed using the droplet discharge nozzle 19 including a plurality of fluid discharge nozzles, the thickness of the liquid film 61 is locally reduced at the droplet discharge position on the upper surface of the substrate W by the deposition of the droplets of the processing liquid, and when mist is deposited at the droplet discharge position DA, a watermark or particles may be generated. In this case, since the main cause of the generation of the mist is the liquid splash, by suppressing or preventing the liquid splash, it is desirable to suppress or prevent the mist from adhering to the droplet supply position DA.
As is clear from the above, according to the present embodiment, when the cleaning step S4 in which the treatment liquid droplets are supplied to the droplet supply position DA is shifted to the rinsing step S5 in which the continuously flowing rinse liquid is supplied, the discharge of the treatment liquid droplets from the droplet nozzle 19 to the droplet supply position DA is stopped before the rinse liquid is discharged from the rinse liquid nozzle 44 to the liquid position P1.
If the discharge of the droplets of the treatment liquid is stopped after the discharge of the rinse liquid from the rinse liquid nozzle 44, the rinse liquid may reach the droplet supply position DA before the discharge of the droplets of the treatment liquid is stopped. In this case, since droplets of the treatment liquid are sprayed to the liquid film which becomes thicker as the rinse liquid is supplied, there is a possibility that the liquid splashes.
In contrast, in the present embodiment, the discharge of the droplets of the treatment liquid from the droplet nozzle 19 is stopped before the discharge of the rinse liquid from the rinse liquid nozzle 44 or simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle 44, so that the discharge of the droplets of the treatment liquid from the thick liquid film can be avoided. This can suppress or prevent the liquid from splashing when the cleaning step S4 is shifted to the flushing step S5. Therefore, the mist caused by the splashing of the liquid can be suppressed or prevented from adhering to the droplet supply position DA in the upper surface of the substrate W. Therefore, the mist can be suppressed or prevented from adhering to the droplet supply position DA on the upper surface of the substrate W. This can suppress or prevent generation of a watermark on the upper surface (front surface) of the substrate W even when the upper surface of the substrate W is hydrophobic.
While one embodiment of the present invention has been described above, the present invention may be implemented in other embodiments.
For example, when the cleaning process S4 is shifted to the flushing process S5, the supply of the processing liquid to the droplet ejection nozzles 19 and the supply of the gas to the droplet ejection nozzles 19 are stopped, thereby stopping the ejection of the processing liquid droplets from the droplet ejection nozzles 19. However, in order to stop the ejection of the treatment liquid droplets from the droplet nozzles 19, only the supply of the gas to the droplet nozzles 19 may be stopped. In this case, the treatment liquid continues to be discharged from the droplet discharge nozzle 19 in a continuous flow. However, depending on the type of the treatment liquid (for example, when the treatment liquid is the same water as the rinse liquid), the rinsing step S5 is not hindered even if the treatment liquid is continuously discharged from the droplet discharge nozzle 19. In contrast, from the viewpoint of covering the upper surface of the substrate W, it is preferable that the treatment liquid be discharged in a continuous flow from the droplet discharge nozzle 19 even after the discharge of the droplets of the treatment liquid from the droplet discharge nozzle 19 is stopped.
As shown by the broken line in fig. 6, when the cleaning process S4 is shifted to the rinse process S5, the discharge of the droplets of the treatment liquid from the droplet nozzle 19 may be stopped after the rinse liquid is discharged from the rinse liquid nozzle 44 to the liquid position P1 (that is, the discharge of the rinse liquid from the rinse liquid nozzle 44 may be started before the discharge of the droplets of the treatment liquid from the droplet nozzle 19 is stopped). However, since the rinse liquid supplied to the landing position P1 at the center of the substrate W reaches the peripheral edge region Re of the substrate W where the droplet supply position DA is disposed, the required arrival period required for the rinse liquid supplied to the center of the substrate W to reach the peripheral edge region Re of the substrate W at the liquid processing speed of the substrate W may be measured in advance, and the discharge of the droplets of the processing liquid from the droplet nozzle 19 may be stopped after the discharge of the rinse liquid from the rinse liquid nozzle 44 is started and during the required arrival period. In this case, since the discharge of the droplets of the treatment liquid is stopped before the rinse liquid reaches the droplet supply position, the discharge of the droplets of the treatment liquid to the thick liquid film can be avoided.
In addition, in the above-described embodiment, the slurry-like liquid film 62 is formed using the protective liquid from the protective liquid nozzle 46 in the slurry coating step S6, but the slurry-like liquid film 62 may be formed by using the treatment liquid continuously flowing from the droplet nozzle 19 in addition to the protective liquid from the protective liquid nozzle 46. By supplying the treatment liquid to the droplet nozzle 19 in a state where the supply of the gas to the droplet nozzle 19 is stopped, the treatment liquid can be discharged from the droplet nozzle 19 in a continuous flow. In the slurry coating step S6, the slurry-like liquid film 62 may be formed by the treatment liquid continuously flowing from the droplet discharge nozzle 19 without supplying the protective liquid from the protective liquid nozzle 46.
In the above-described embodiment, the slurry-like liquid film 62 is formed using the protective liquid from the protective liquid nozzle 46 in the slurry application step S6, but the slurry-like liquid film 62 may be formed by discharging a liquid (e.g., water) from a liquid-filling nozzle provided separately from the protective liquid nozzle 46. However, in this case, the liquid-filling nozzle is preferably a vertical nozzle that discharges the liquid vertically downward. Since the liquid from the nozzle enters the upper surface of the substrate from the vertical direction, the liquid can be satisfactorily poured onto the upper surface of the substrate, and the slurry-like liquid film 62 can be easily formed.
In the above-described embodiment, the liquid film 61 is formed by using the rinse liquid from the rinse liquid nozzle 44 in the coating step S3, but the liquid film 61 may be formed by discharging the liquid (for example, water) from a coating nozzle provided separately from the rinse liquid nozzle 44.
In the cleaning step S4, the droplet supply position DA is moved (half-scan) between the central portion of the upper surface of the substrate W and the peripheral end portion of the upper surface of the substrate W, but may be moved (full-scan) between the peripheral end portion of the upper surface of the substrate W and the other peripheral end portion on the opposite side of the central portion of the upper surface with respect to the peripheral end portion.
In the cleaning step S4, the droplet supply position DA may be moved in one direction from the center of the upper surface of the substrate W to the peripheral edge area Re of the upper surface of the substrate W without moving back and forth.
In the above-described embodiment, the droplet nozzle 19 is described as a two-fluid nozzle that mixes one kind of liquid with one kind of gas, but may be a nozzle that can mix other kinds of fluids (gas and/or liquid). That is, the droplet discharge nozzle (a plurality of fluid discharge nozzles) may be a nozzle that mixes three or more fluids.
Further, as the droplet ejection nozzle, a droplet ejection nozzle 201 constituted by an ink ejection nozzle for ejecting a large amount of droplets by an ink ejection method may be employed instead of the droplet ejection nozzle 19. Fig. 8A is a schematic cross-sectional view of the droplet nozzle 201. Fig. 8B is a schematic top view of the droplet nozzle 201.
A processing liquid pipe 210 for supplying a processing liquid from a processing liquid supply source to the droplet nozzle 201 is connected to the droplet nozzle 201. The treatment liquid is always supplied to the droplet nozzle 201 by pressure feeding by a pump. The droplet nozzle 201 is connected to a liquid discharge pipe 214 to which a discharge valve 215 is attached. The droplet nozzle 201 includes a piezoelectric element (piezo element)216 disposed inside the droplet nozzle 201. The piezoelectric element 216 is connected to a voltage applying unit (not shown) such as a transducer (inverter) via a wiring 217. When an alternating voltage is applied to the piezoelectric element 216 by the voltage applying unit, the piezoelectric element 216 may vibrate at a frequency corresponding to the frequency of the applied alternating voltage. By changing the frequency of the ac voltage applied to the piezoelectric element 216 to an arbitrary frequency (for example, several hundred KHz to several MHz), the frequency of the vibration of the piezoelectric element 216 can be changed.
The droplet nozzle 201 has a main body 221. As shown in fig. 8A, the main body 221 includes: a supply port 224 to which the processing liquid is supplied; a discharge port 225 for discharging the processing liquid supplied to the supply port 224; a process liquid flow path 226 connecting the supply port 224 and the discharge port 225; and a plurality of injection ports 227 connected to the process liquid flow path 226. The process liquid circulation path 226 is provided inside the main body 221. The supply port 224, the discharge port 225, and the ejection port 227 are opened on the surface of the main body 221. The supply port 224 and the discharge port 225 are located above the injection port 227. The lower surface 201a of the main body 221 is, for example, a horizontal flat surface, and the ejection port 227 opens to the lower surface 201a of the main body 221. The ejection opening 227 is a fine hole having a diameter of, for example, several μm to several tens μm. The treatment liquid pipe 210 and the drain pipe 214 are connected to the supply port 224 and the drain port 225, respectively.
As shown in fig. 8B, the plurality of ejection openings 227 form a plurality of (for example, four in fig. 8B) rows L. Each row L is constituted by a plurality of (for example, 10 or more) ejection openings 227 arranged at equal intervals. Each column L extends linearly along the horizontal longitudinal direction. Each row L is not limited to a straight line, and may be a curved line.
The processing liquid supplied to the supply port 224 via the processing liquid pipe 210 is supplied to the processing liquid flow path 226. In a state where the discharge valve 215 is closed, the pressure (hydraulic pressure) of the treatment liquid in the treatment liquid flow path 226 is high. Therefore, in a state where the discharge valve 215 is closed, the treatment liquid is injected from each injection port 227 by the hydraulic pressure. When an ac voltage is applied to the piezoelectric element 216 in a state where the discharge valve 215 is closed, vibration of the piezoelectric element 216 is applied to the processing liquid flowing through the processing liquid flow path 226, and the processing liquid ejected from each ejection port 227 is divided by the vibration. Therefore, when an alternating voltage is applied to the piezoelectric element 216 in a state where the discharge valve 215 is closed, droplets of the processing liquid are ejected from the respective ejection ports 227. Thereby, a large number of treatment liquid droplets having a uniform particle diameter are ejected simultaneously at a uniform speed.
On the other hand, in a state where the discharge valve 215 is opened, the processing liquid supplied to the processing liquid flow path 226 is discharged from the discharge port 225 to the drain pipe 214. That is, in the state where the discharge valve 215 is opened, the hydraulic pressure in the treatment liquid flow path 226 does not sufficiently rise, and therefore the treatment liquid supplied to the treatment liquid flow path 226 is discharged from the discharge port 225 to the drain pipe 214 without being ejected from the injection port 227 which is a fine hole. Therefore, the discharge of the treatment liquid from the discharge port 227 is controlled by opening and closing the discharge valve 215. The controller 3 opens the discharge valve 215 while the droplet nozzle 201 is not used for processing the substrate W (while the droplet nozzle 201 is on standby). Therefore, even during the standby period of the droplet nozzle 201, the processing liquid is maintained in a state of flowing through the droplet nozzle 201.
In the above-described embodiment, the substrate processing apparatus 1 has been described as a device for processing the surface of the substrate W made of a semiconductor wafer, but the substrate processing apparatus may be a device for processing a substrate such as a substrate for a liquid crystal Display device, a substrate for a Flat Panel Display (FPD) such as an organic EL (electroluminescence) Display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. However, the effect of the present invention is particularly remarkable when the surface of the substrate W is hydrophobic.
Although the embodiments of the present invention have been described in detail, these embodiments are only specific examples for illustrating technical contents of the present invention, and the present invention should not be construed as being limited to these specific examples, and the scope of the present invention is limited only by the scope of the appended claims.
The present application corresponds to Japanese patent application No. 2017-198618, filed in the office on 10/12/2017, and the entire contents of the application are incorporated by reference.
Description of the reference numerals
1: a substrate processing apparatus,
3: a control device,
4: a chamber,
5: a spin chuck (substrate holding unit),
6: a droplet supply unit,
7: a rinse liquid supply unit,
8: a protective liquid supply unit,
15: a spin motor (a rotation unit),
19: droplet nozzle(s),
21: a first nozzle moving unit (supply position moving unit),
44: a flushing liquid nozzle,
46: a protective liquid nozzle,
201: a liquid drop nozzle,
DA: a droplet supply position,
P1: the position of liquid application,
W: a substrate.

Claims (18)

1. A method of processing a substrate, comprising:
a cleaning step of cleaning the upper surface of the substrate by ejecting droplets of a processing liquid from a droplet ejection nozzle to a droplet supply position set on the upper surface of the substrate held in a horizontal posture,
a rinsing step of, after the cleaning step, discharging a continuously flowing rinsing liquid from a rinsing liquid nozzle to a predetermined landing position on the upper surface of the substrate to rinse the upper surface of the substrate with the rinsing liquid, and
and a droplet discharge stopping step of stopping the discharge of the droplets of the processing liquid from the droplet discharge nozzle before the rinse liquid applied to the applying position reaches the droplet supply position in a process of transition from the cleaning step to the rinsing step.
2. The substrate processing method according to claim 1,
the droplet ejection nozzle includes a plurality of fluid ejection nozzles that generate droplets of a processing liquid by mixing a gas with the processing liquid and eject the generated droplets of the processing liquid to the droplet supply position;
the droplet discharge stopping step includes a gas supply stopping step of stopping the supply of the gas to the plurality of fluid nozzles before the rinse liquid applied to the applying position reaches the droplet supply position.
3. The substrate processing method according to claim 1 or 2, wherein,
the droplet discharge stopping step includes the steps of: before or simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle, the discharge of the droplets of the treatment liquid from the droplet nozzle is stopped.
4. The substrate processing method according to claim 1 or 2, wherein,
the liquid applying position is arranged at the central part of the upper surface of the substrate;
the rinsing step is started in a state where the droplet supply position is arranged in a peripheral region of the substrate.
5. The substrate processing method according to claim 1 or 2, wherein,
the cleaning process comprises the following steps: and ejecting the protective liquid from the protective liquid nozzle at an ejection flow rate smaller than an ejection flow rate of the rinse liquid ejected from the rinse liquid nozzle in the rinse step.
6. The substrate processing method according to claim 5, wherein,
the protective liquid nozzle is provided so as to be movable in accordance with the movement of the droplet supply position.
7. The substrate processing method according to claim 5, wherein,
the protective liquid nozzle comprises a plumb nozzle which sprays protective liquid towards the plumb direction;
the rinse liquid nozzle includes an inclined nozzle that discharges the rinse liquid in a direction inclined with respect to the vertical direction.
8. The substrate processing method according to claim 5, further comprising:
a slurry coating step of forming a slurry-like liquid film coating the upper surface of the substrate by bringing the substrate to a stationary state or rotating the substrate at a slurry coating speed around a predetermined vertical axis passing through the center of the substrate after the rinsing step, and
a removing step of removing the liquid film from the upper surface of the substrate after the slurry coating step, and including a hole forming step of forming a hole in the liquid film and a step of enlarging the hole;
the slurry coating step includes a step of stopping the discharge of the rinse liquid from the rinse liquid nozzle and discharging the protective liquid from the protective liquid nozzle.
9. The substrate processing method according to claim 1 or 2, wherein,
the upper surface of the substrate is hydrophobic.
10. A substrate processing apparatus, comprising:
the chamber is provided with a plurality of cavities,
a substrate holding unit for holding a substrate in a horizontal posture in the chamber,
a rotating unit that rotates the substrate held by the substrate holding unit around a vertical axis passing through a central portion of the substrate,
a droplet supply unit having a droplet nozzle that ejects a droplet of the processing liquid to a droplet supply position set on an upper surface of the substrate held by the substrate holding unit to supply the droplet of the processing liquid to the upper surface of the substrate held by the substrate holding unit,
a rinse liquid supply unit having a rinse liquid nozzle fixed inside the chamber and discharging a continuously flowing rinse liquid to a predetermined landing position on the upper surface of the substrate to supply the rinse liquid to the upper surface of the substrate, and
a controller that controls the droplet supply unit and the rinse liquid supply unit;
the control device performs:
a cleaning step of discharging the droplets of the processing liquid from the droplet discharge nozzle to the droplet supply position by the droplet supply unit to clean the upper surface of the substrate,
a rinsing step of discharging a continuously flowing rinsing liquid from the rinsing liquid nozzle to the upper surface of the substrate by the liquid droplet supply unit after the cleaning step, and rinsing the upper surface of the substrate with the rinsing liquid, and
and a droplet discharge stopping step of stopping the discharge of the droplets of the processing liquid from the droplet discharge nozzle before the rinse liquid applied to the applying position reaches the droplet supply position in a process of transition from the cleaning step to the rinsing step.
11. The substrate processing apparatus according to claim 10,
the droplet ejection nozzle includes a plurality of fluid ejection nozzles that generate droplets of a processing liquid by mixing a gas in the processing liquid and eject the generated droplets of the processing liquid to the droplet supply position,
the controller executes a gas supply stopping step in which the supply of the gas to the plurality of fluid nozzles is stopped before the rinse liquid applied to the applying position reaches the droplet supply position, in the droplet ejection stopping step.
12. The substrate processing apparatus according to claim 10 or 11,
the control device executes the following steps in the droplet discharge stopping step: before or simultaneously with the discharge of the rinse liquid from the rinse liquid nozzle, the discharge of the droplets of the treatment liquid from the droplet nozzle is stopped.
13. The substrate processing apparatus according to claim 10 or 11,
further comprising a supply position moving unit for moving the droplet supply position within the upper surface of the substrate;
the liquid applying position is arranged at the central part of the upper surface of the substrate;
the control device further controls the feed position moving unit;
the controller starts the rinsing process in a state where the droplet supply position is arranged in the peripheral region of the substrate by the supply position moving unit.
14. The substrate processing apparatus according to claim 10 or 11,
further comprising a protective liquid supply unit having a protective liquid nozzle for ejecting a protective liquid onto the upper surface of the substrate to supply the protective liquid onto the upper surface of the substrate,
the control device also controls the protective liquid supply unit;
the control device executes the following steps in the cleaning step: the protective liquid supply unit discharges the protective liquid from the protective liquid nozzle at a discharge flow rate smaller than a discharge flow rate of the rinse liquid discharged from the rinse liquid nozzle in the rinse step.
15. The substrate processing apparatus of claim 14, wherein,
further comprising a supply position moving unit for moving the droplet supply position within the upper surface of the substrate;
the protective liquid nozzle is provided so as to be movable in accordance with the movement of the liquid droplet supply position by the supply position moving means.
16. The substrate processing apparatus of claim 14, wherein,
the protective liquid nozzle comprises a plumb nozzle which sprays protective liquid towards the plumb direction;
the rinse liquid nozzle includes an inclined nozzle that discharges the rinse liquid in a direction inclined with respect to the vertical direction.
17. The substrate processing apparatus of claim 14, wherein,
the control device also controls the rotating unit;
the control device further performs:
a slurry coating step of forming a slurry-like liquid film coating the upper surface of the substrate by at least bringing the substrate to a stationary state by the rotation unit or rotating the substrate around the vertical axis at a slurry coating speed after the rinsing step, and
a removing step of removing the liquid film from the upper surface of the substrate by at least the rotating unit after the slurry coating step, and including a hole forming step of forming a hole in the liquid film and a step of expanding the hole;
the control device performs a step of stopping the discharge of the rinse liquid from the rinse liquid nozzle and discharging the protective liquid from the protective liquid nozzle in the slurry coating step.
18. The substrate processing apparatus according to claim 10 or 11,
the upper surface of the substrate is hydrophobic.
CN201880060333.XA 2017-10-12 2018-10-04 Substrate processing method and substrate processing apparatus Pending CN111095494A (en)

Applications Claiming Priority (3)

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JP2017198618A JP6966917B2 (en) 2017-10-12 2017-10-12 Board processing method and board processing equipment
JP2017-198618 2017-10-12
PCT/JP2018/037271 WO2019073905A1 (en) 2017-10-12 2018-10-04 Substrate processing method and substrate processing device

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US7766565B2 (en) * 2005-07-01 2010-08-03 Sokudo Co., Ltd. Substrate drying apparatus, substrate cleaning apparatus and substrate processing system
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