CN111091766B - Display device including subminiature light emitting diode module - Google Patents

Display device including subminiature light emitting diode module Download PDF

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Publication number
CN111091766B
CN111091766B CN201911354949.0A CN201911354949A CN111091766B CN 111091766 B CN111091766 B CN 111091766B CN 201911354949 A CN201911354949 A CN 201911354949A CN 111091766 B CN111091766 B CN 111091766B
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emitting diode
electrode
light emitting
display device
signal line
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CN111091766A (en
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都永洛
成演国
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3406—Control of illumination source
    • G09G3/342—Control of illumination source using several illumination sources separately controlled corresponding to different display panel areas, e.g. along one dimension such as lines
    • G09G3/3426—Control of illumination source using several illumination sources separately controlled corresponding to different display panel areas, e.g. along one dimension such as lines the different display panel areas being distributed in two dimensions, e.g. matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0823—Several active elements per pixel in active matrix panels used to establish symmetry in driving, e.g. with polarity inversion
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3406—Control of illumination source
    • G09G3/3413—Details of control of colour illumination sources

Abstract

The present invention relates to a display device including a subminiature light emitting diode and a method of manufacturing the same. According to an embodiment, a display device including a subminiature light emitting diode module includes: a panel in which first signal lines and second signal lines are arranged in a lattice form; a light emitting diode module including an electrode assembly having a first electrode connected to the first signal line and the second signal line and a ground, and a plurality of subminiature light emitting diode elements connected to the first electrode and the second electrode; and two or more switches for connecting the first signal line and the second signal line to the first electrode, the second electrode being connected to a common electrode formed on the panel, at least one different light emitting diode module being grounded to the common electrode, the two or more switches selectively supplying the first electrode with a current supplied through the first signal line based on a signal of the first signal line and a signal of the second signal line.

Description

Display device including subminiature light emitting diode module
Technical Field
The present invention relates to a display device including a subminiature Light Emitting Diode (LED) element, and more particularly, to a light emitting diode display device including a subminiature light emitting diode element in a nano-unit and a method of manufacturing the same.
Background
In 1992, Zhongcun et al, Japan Riya corporation, succeeded in fusing high-quality single-crystal gallium nitride (GaN) semiconductors by applying a low-temperature GaN compound buffer layer, and thus actively developed a light-emitting diode. A light emitting diode has a semiconductor having a structure in which an n-type semiconductor crystal in which a plurality of carriers are electrons and a p-type semiconductor crystal in which a plurality of carriers are holes are bonded to each other by utilizing the characteristics of the semiconductor, and the light emitting diode having the structure is a semiconductor element which exhibits by converting an electric signal into light having a wavelength range of a desired region. Since such a light emitting diode semiconductor has a high light conversion effect, it has a very low energy consumption, a semi-permanent life, and environmental protection, and thus is called a light revolution as a green material. Recently, with the development of compound semiconductor technology, high-luminance red, orange, green, blue, and white light-emitting diodes have been developed.
As a result, light emitting diode illumination using light emitting diodes and light emitting diode display devices, which are used as display devices for various small electronic devices such as mobile phones and notebook computers, have been continuously developed, and research on the light emitting diode illumination and the light emitting diode display devices has been actively conducted.
Currently, according to an embodiment in which the light emitting diode is used in a Display device, the Display device is a Liquid Crystal Display (LCD) device. Since the liquid crystal display device cannot actively emit light, it is necessary to provide a backlight for emitting light on the back surface of the communication liquid crystal display panel, and to make the color of an image displayed by the liquid crystal display panel close to the actual color by emitting white light from the back surface of the liquid crystal display panel. A Cold Cathode Fluorescent Lamp (CCFL) or an External Electrode Fluorescent Lamp (EEFL) is used as a Light source in the first place, but with the advent of a high-efficiency Light Emitting Diode (LED) having excellent physical and chemical properties, an attempt has been made to put the Light emitting Diode into practical use as a backlight for use as a Light source, and to make the Light emitting Diode popular as a full-color (full color) Light emitting Diode display device which is not a simple backlight.
With such attempts, a full-color light-emitting diode display device which is currently in widespread use is a display device for an outdoor screen which is a very large-sized substrate and in which tens of thousands to hundreds of thousands of light-emitting diodes of three primary colors of red, green, and blue are embedded, and a liquid crystal display television or a display for a home television or a computer called a light-emitting diode television (LED TV) uses a backlight of a liquid crystal display panel instead of a conventional fluorescent lamp, and uses a white or three primary color light-emitting diode element as a backlight, and these are not true light-emitting diode display devices.
The reason why the conventional light emitting diode element cannot be used for the development of a display device of a television or a display grade is that a technical method for manufacturing a display device using a light emitting diode element and a method for realizing full color have fundamental limitations.
When a display device for a television is directly manufactured by using a conventional light emitting diode element, it is known that a television of 40-inch class can be manufactured by connecting 5 to 40 chips of 2 to 8 inches by simple calculation. Therefore, in the case of directly manufacturing a display device of a television grade using a light emitting diode element by a conventionally known manufacturing technique, there are many problems that cannot be overcome by the conventional techniques. Meanwhile, in order to realize full color, it is necessary to embed three primary color light emitting diode elements of red, green, and blue into one pixel (pixel) together, and thus it is impossible to realize a light emitting diode full color display device by simply splicing red, green, and blue light emitting diode chips.
Many studies carried out so far to realize a high-efficiency light-emitting diode display device have revealed that, in the case of the bottom-up (bottom-up) method in which a group III-V film and a nanorod light-emitting diode element are directly grown at a patterned pixel position of a large-area glass substrate for a practical display device, it is also difficult to perform a step of directly depositing the group III-V film on a large-sized substrate having a size of the order of a display device for a television set or the like, and a step of growing the group III-V film and the nanorod light-emitting diode element with high crystallinity and high efficiency on a transparent electrode patterned on a transparent amorphous glass substrate. Due to such technical limitations, few attempts have been made to realize a full-color display device at a television or display level by directly growing a light emitting diode element on a large-area glass substrate.
Another approach being pushed by researchers to realize light emitting diode display devices is the bottom-up approach based on nanotechnology. This method is a method of realizing a large-area display device by, after growing a nanorod type light emitting diode on a single crystal substrate, dividing a portion thereof to rearrange it on an electrode patterned with pixels in a bottom-up manner. However, the nanorod light emitting diode manufactured in the bottom-up manner as described above has a problem in that the light emitting efficiency is rapidly decreased compared to the conventional film type light emitting diode grown on a wafer.
And as another method, there is a top-down (top-down) method of realizing a light emitting diode display device by cutting high efficiency light emitting diode elements. In general, this method is a method of realizing a display device in a one-to-one correspondence manner in which micro light emitting diode elements manufactured in a top-down manner are arranged one by one at sub-pixel positions on a large-area glass substrate. In this case, after the light emitting diode element is grown on a sapphire substrate, a micro light emitting diode element is manufactured by patterning in a micro-scale formation, and then an electrode wiring is performed, so that a micro light emitting diode display device smaller than the wafer substrate size can be realized.
This last approach appears to be the preferred method for implementing led display devices for the current state of the art. However, in the case where the electrode, the light emitting diode element, and the other electrode are three-dimensionally coupled to each other by laminating the electrode, the light emitting diode element, and the other electrode from the bottom to the top in the process of wiring the electrode of the manufactured light emitting diode element, it is necessary to three-dimensionally erect the light emitting diode element between the two different electrodes to couple the electrodes, and the coupling can be performed by a general light emitting diode element, but in the case of manufacturing a nano-sized ultra-small light emitting diode element, it is difficult to three-dimensionally erect the light emitting diode element to couple the electrodes, and since some of the light emitting diode elements can be present in a lying state, defective pixels may occur, and even if the ultra-small light emitting diode can be three-dimensionally erected on the electrodes, there is also a problem that it is difficult to bond the subminiature light emitting diode to different electrodes one-to-one. Even if one or two pixels are defective, the entire display device is defective, and thus there is a possibility that such a defect may cause a defect in the display device itself.
Prior art documents:
in the patent literature, it is known that,
patent document 1: korean granted patent No. 2006-0060461.
Disclosure of Invention
The present invention has been made to solve the above-described problems, and it is an object of the present invention to provide a display device which can realize a large-area two-color light emitting diode, a single-color light emitting diode, or a three-primary-color (RGB) full-color light emitting diode display device by disposing, in a pixel unit of the display device, a plurality of nano-unit-sized ultra-small light emitting diode elements connected to two electrodes different from each other without short-circuiting.
According to various embodiments, a display device that minimizes image quality defects can be provided by operating a subminiature light-emitting diode element, at least a part of which is arranged in a light-emitting diode module with a polarity that is crossed, on the basis of an alternating current.
According to an embodiment of the present invention, a display device including a subminiature light emitting diode module includes: a panel in which first signal lines and second signal lines are arranged in a lattice form; a light emitting diode module including an electrode assembly having a first electrode connected to the first signal line and the second signal line and a second electrode grounded, and a plurality of subminiature light emitting diode elements connected to the first electrode and the second electrode; and two or more switches for connecting the first signal line and the second signal line to the first electrode, wherein the second electrode is connected to a common electrode formed on the panel, and at least one different light emitting diode module is grounded to the common electrode, and wherein the two or more switches selectively supply the current supplied from the first signal line to the first electrode based on a signal of the first signal line and a signal of the second signal line.
According to various embodiments, the led module comprises a plurality of subminiature led elements connected along at least a portion of a direction having a polarity opposite to the first and second electrodes.
According to various embodiments, in the light emitting diode module, a solution containing a plurality of ultra-small light emitting diode elements is poured into an electrode assembly, and the plurality of ultra-small light emitting diode elements are simultaneously connected to a first electrode and a second electrode by supplying an ac power to the electrode assembly, thereby forming a plurality of sub-pixels.
According to various embodiments, in the sub-pixel, the pixel is contained at 100 × 100 μm2The number of the plurality of subminiature led elements in the area may be 2 to 100000.
According to various embodiments, the plurality of subminiature light emitting diode elements may include at least one of a plurality of subminiature light emitting diode elements for emitting light in a blue, green, red, amber wavelength range.
According to various embodiments, the subminiature light emitting diode element has a length of 100nm to 10 μm, and the insulating film may be formed by including an active layer in an outer circumferential surface of the subminiature light emitting diode element.
According to various embodiments, the plurality of subminiature light emitting diode elements connected to the first electrode and the second electrode are arranged in parallel with the substrate of the light emitting diode module.
According to various embodiments, the common electrode may be formed of an Indium Tin Oxide (ITO) film.
According to various embodiments, the display device including the subminiature light emitting diode module further includes an inverter supplying the first signal line by converting a direct current into an alternating current, and the display device including the subminiature light emitting diode module may selectively supply the alternating current to the first electrode based on a signal of the first signal line and a signal of the second signal line.
According to various embodiments, the first signal line connected to the light emitting diode module may be composed of more than two lines.
The display device including the subminiature light emitting diode and the method of manufacturing the same according to the present invention overcome the difficulty in combining the subminiature light emitting diode element with the electrodes in a three-dimensional upright manner and the difficulty in combining the subminiature light emitting diode element with the different subminiature electrodes in a one-to-one correspondence manner by connecting the subminiature light emitting diode element of the nano-unit to the two subminiature electrodes different from each other without a short circuit, thereby realizing a display device constituted by a light emitting diode module including a plurality of subminiature light emitting diode elements.
In addition, in the conventional light emitting diode display device, since the sub-pixel position is formed on the electrode, photons generated in the active layer of the ultra-small light emitting diode element are blocked by the electrode and cannot be extracted, and the ultra-small light emitting diode element exhibits low light extraction efficiency as the photons are absorbed in the element, the sub-pixel position is changed, and further, the light extraction efficiency of the ultra-small light emitting diode element can be greatly improved as the amount of photons emitted to the atmosphere among the photons generated in the active layer increases due to the cylindrical shape of the ultra-small light emitting diode element connected to the electrode and the orientation of the ultra-small light emitting diode element placed opposite to the electrode and the substrate, that is, the amount of photons emitted to the atmosphere increases due to the arrangement of the ultra-small light emitting diode element with respect to the substrate.
Further, in order to prevent defective pixels and defects of the entire display device due to the occurrence of defective subminiature light emitting diode elements, it is possible to minimize defects of the display device including the subminiature light emitting diodes by including a plurality of subminiature light emitting diode elements in the sub-pixels and to maintain the original functions.
Further, unlike a conventional light emitting diode display device in which an ultra-small light emitting diode element is vertically combined with an upper electrode and a lower electrode in three dimensions, the ultra-small light emitting diode is easily self-assembled between two electrodes different from each other, and thus a light emitting diode display device in which the ultra-small light emitting diode can be arranged in a drivable state in a large area can be mass-produced.
Further, the display device in which at least a part of the polarities are arranged to intersect with each other in the light emitting diode module operates based on the alternating current, so that the use efficiency of the electric power used for the electronic device can be effectively controlled.
Drawings
Fig. 1 is a diagram illustrating a display device and a pixel structure in an electronic device according to an embodiment of the invention;
fig. 2a and 2b are diagrams illustrating a schematic structure of a display device according to an embodiment of the present invention, in which ac power is supplied to a light emitting diode module including a plurality of light emitting diode elements;
fig. 3 is a diagram illustrating a structure of a light emitting diode module in a display device according to an embodiment of the present invention;
fig. 4 is a view illustrating a process of manufacturing a light emitting diode module according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a structure of a display device according to an embodiment of the invention, in which LED modules are disposed in pixels;
Description of the reference numerals
100: the electronic device 150: display device
101. 103, 111, 113: pixels 231, 233: signal line
201: light emitting diode module 300, 600: light emitting diode module
320: transparent conductive films 301 and 303: and an electrode.
Detailed Description
Various embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily carry out the present invention. The invention may be embodied in many different forms, specific embodiments being illustrated in the drawings and the accompanying detailed description being presented. However, the present invention is not intended to limit the embodiments of the present invention, and it should be understood that the present invention includes all modifications and/or equivalents as well as alternative embodiments within the scope of the concept and technique of the present invention. In order to clearly explain the present invention, portions that are not relevant to the explanation may be omitted in the drawings, and the same reference numerals may be used for similar structural elements throughout the specification.
In various embodiments of the invention, the expression "or," "at least one," and the like may mean one of the words listed together, or a combination of two or more. For example, "A or B" and "at least one of A and B" may include only one of A or B, or both A and B.
In various embodiments of the present invention, expressions such as "first", "second", etc. may modify various structural elements, but are not limited to indicating the order or importance of the corresponding structural elements. For example, the first device and the second device are both devices, and may represent devices different from each other. Also, in the case where elements of the first apparatus, such as structure, function, and operation, are the same as or similar to those of the second apparatus, the first apparatus may be named the second apparatus, and similarly, the second apparatus may also be named the first apparatus, without departing from the scope of the present invention.
In various embodiments of the present invention, when a structural element is referred to as being "connected" or "coupled" to another structural element, it is understood that the structural elements may be directly connected or coupled, but at least one other structural element may be present between the structural elements. Conversely, where a component is referred to as being "directly connected" or "directly coupled" to another component, it is understood that no other component is present between the components.
The use of terms in various embodiments of the invention is used to describe a particular embodiment and should not be construed to limit the invention, e.g., a singular expression may include a plural expression unless a different meaning is expressly set forth herein.
It will be apparent that devices (or electronic devices) of the various embodiments of the present invention can be replaced with devices of the same or similar form unless otherwise specified. Moreover, the electronic devices of the various embodiments of the present invention may be formed by one or a combination of more than one of the various electronic devices described. For example, a device may be constituted by a structure including at least a part of the plurality of devices described or at least a part of the functions of the devices. According to an embodiment, the device may be constituted by at least one display device (display portion), or may be constituted by a device including at least one display device.
Hereinafter, electronic devices of various embodiments are observed with reference to the drawings. Where the term "user" is described in various embodiments, this may refer to a person using the electronic device or a device using the electronic device (e.g., an artificial intelligence electronic device). Furthermore, the electronic device may be attached to or worn on a portion of the user's body, in which state the user may be referred to as a "user" or a "wearer". In the case where the electronic device is a device attached to or worn on a part of the body of the user, the electronic device may be referred to as a wearable electronic device (wearable device). Also, an electronic device designated by a user (e.g., a smart phone, a Personal Digital Assistant (PDA), a smart watch, etc.) may be referred to as a user device.
Fig. 1 is a diagram illustrating a display device and a pixel structure in an electronic device according to an embodiment of the invention.
According to an embodiment, the electronic device 100 may include at least one display device (or display portion) 150. Here, the display device 150 may refer to a display device in which a light emitting diode panel including light emitting diode elements is used as a backlight and/or a display device in which the light emitting diode panel is used as a display portion, for example.
Referring to fig. 1, the minimum unit of an image displayed on the display device 150 of the electronic device 100 can be defined by pixels (or pixels). According to an embodiment, the pixels may be defined as a matrix form (or structure) based on a space formed in a lattice form of the display device 150 in rows and columns, but is not limited thereto, and the pixels may be defined as a matrix form based on one light emitting diode element. Further, the pixels may also be defined as a matrix form based on a plurality of light emitting diode elements constituting a prescribed pattern and/or a light emitting diode module in which the plurality of light emitting diode elements are arranged.
According to an embodiment, the display device 150 is distinguished by at least one line in rows and columns, in which case a plurality of lines formed in a row or a column may be formed of an electrode line (e.g., word line) or may be formed of a data line (e.g., bit line) for inputting/outputting a signal. In the following description, a line arranged in a row or a column configuring the display device 150 may be denoted as a first signal line, and a line arranged in another row or column may be denoted as a second signal line.
According to various embodiments of the present invention, although the plurality of lines arranged in the rows and columns of the display device 150 are represented by the first signal line and the second signal line, the present invention is not limited thereto, and may be used in various manners such as the data line described above, and at least one of the first signal line and the second signal line may be formed separately without being arranged in the rows and columns of the display device 150, and obviously, at least one of the signal lines may be omitted.
According to an embodiment, the rows (e.g., the first signal lines 231) for constituting the display device 150 may be constituted by electrodes. For example, referring to fig. 2a and 2b, WL1, WL2, WL3 to WLn may be constituted by lines for supplying a specified basic signal (e.g., frequency) or current to the light emitting diode modules.
According to an embodiment, the columns (e.g., the second signal lines 233) for constituting the display device 150 may be constituted by data lines. For example, referring to fig. 2a and 2b, BL1, BL2, BL3 to BLm may control signals input/output to/from the light emitting diode module.
Referring to fig. 2a and 2b, the first signal line 231 is denoted by a name WL, and the first signal line 231 is described as a line for supplying a specified basic signal (for example, frequency) or current to the light emitting diode module, and the second signal line 233 is denoted by a name BL, and the second signal line 233 is described as a line for controlling a signal input to and output from the light emitting diode module.
According to an embodiment, the pixels of the display device 150 can be configured to include one light emitting diode element in a lattice configuration configured by one row and one column, but the following description will explain the display device 150 including two or more light emitting diode elements in one pixel.
According to various embodiments, the ground of the light emitting diode elements included in the display device 150 is formed of a transparent conductive film having conductivity, for example, an Indium Tin Oxide film (ITO film), so that a common electrode can be formed on a two-dimensional plane of the display device 150.
Fig. 2a and 2b are diagrams illustrating a schematic structure of a display device according to an embodiment of the present invention, in which ac power is supplied to a light emitting diode module including a plurality of light emitting diode elements.
According to an embodiment, the display device 150 of fig. 2a and 2b may be a display device 150 in which pixels are formed based on the first signal lines 231 and the second signal lines 233. The display device 150 may be connected to a light emitting diode module 201 including a plurality of light emitting diode elements in one pixel. For example, the light emitting diode element 211 may be ultra-small (e.g., nano-sized). According to an embodiment, the led device 211 may have a diameter of 300nm to 700nm and a length of 2 μm to 3 μm. Therefore, the light emitting diode element can be described as a subminiature light emitting diode element.
In the plurality of light emitting diode elements, a color conversion layer may be included in a predetermined region (for example, a front surface portion of the light emitting diode module from which light of the element is emitted) for emitting at least a part of light of green, red, and amber wavelengths by using light of blue wavelength range. In this case, the plurality of light emitting diode elements (or light emitting diode modules 201) may include at least one of a plurality of light emitting diode color conversion elements formed with a color conversion layer for emitting at least a portion of the blue, green, red, amber wavelength light.
According to an embodiment, the color conversion layer may include at least one phosphor (or fluorescent substance) for passing light of a designated frequency range. For example, in the case where the light emitting diode is an Ultraviolet (UV) light emitting diode, it is preferable that the phosphor excited by ultraviolet rays is a phosphor containing one of blue, yellow, green, amber and red colors, and in this case, it may be formed of a single color light emitting diode lamp for emitting a selected one of the colors.
Also, the phosphor excited by ultraviolet rays may preferably exhibit at least one color of blue, yellow, green, amber and red, more preferably, one mixed phosphor of blue/yellow, blue/green/red and blue/green/amber/red, in which case white light may be emitted by the formed phosphor.
The specific type of the combinable phosphors may vary according to the color emitted from the led element according to various embodiments, and the combinable phosphors may be a known combination, and the present invention is not limited thereto and may have various embodiments.
For example, in the case where the light emitting diode element is a subminiature blue light emitting diode, the phosphor excited by blue may be preferably one or more phosphors of yellow, green, amber, and red. More preferably, the phosphor may be one of mixed phosphors of blue/yellow, blue/green/red, and blue/green/amber/red, in which case white light may be irradiated via the phosphor.
Preferably, the yellow phosphor may be selected from the group consisting of Y3Al5O12:Eu、Lu3Al5O12:Eu、(Sr，Ba)3SiO5:Eu、(Sr，Ba，Ca)2SiO4Eu, Ca-alpha-SiAlON, Eu and (Ba, Eu) ZrSi3O9One or more phosphors of the group consisting of.
Preferably, the blue phosphor may be one selected from the group consisting of ZnS: AgCl, ZnS: AgAl, (Sr, Ba, Ca, Mg)10(PO4)6Cl2：Eu、(Ba，Sr)MgAl10O17:Eu、BaMgAl10O17:Eu、(Sr，Ba)3MgSi2O8:Eu、LaSi3N5:Ce、LaSi5Al2ON9:Eu、Sr2MgSi2O7:Eu、CaMgSi2O6Eu, or more than one phosphor.
Preferably, the green phosphor may be selected from the group consisting of SrGa2S4:Eu、(Sr，Ca)3SiO5:Eu、(Sr，Ba，Ca)SiO4:Eu、Li2SrSiO4:Eu、Sr3SiO4:Ce，Li、β-SiALON:Eu、CaSc2O4:Ce、Ca3Sc2Si3O12:Ce、Caα-SiALON:Yb、Caα-SiALON：Eu、Liα-SiALON:Eu、Ta3Al5O12:Ce、Sr2Si5N8:Ce、(Ca，Sr，Ba)Si2O2N2:Eu、Ba3Si6O12N2Eu, gamma-AlON, Mn, and gamma-AlON, Mn, Mg.
Preferably, the amber phosphor may be selected from (Sr, Ba, Ca) 2SiO4Eu, (Sr, Ba, Ca)3SiO5 Eu and (Ca, Sr, Ba)2Si5N8Eu, or more than one phosphor.
Preferably, the red phosphor may be selected from the group consisting of (Sr, Ca) AlSiN3:Eu、CaAlSiN3:Eu、(Sr，Ca)S:Eu、CaSiN2:Ce、SrSiN2:Eu、Ba2Si5N8Eu, CaS Eu, Ce, SrS Eu, Ce and Sr2Si5N8Eu, or more than one phosphor.
According to various embodiments, the plurality of light emitting diode elements are not limited to light in the blue wavelength range, but may be formed with a color conversion layer that emits blue, green, red, or amber light based on light in the ultraviolet and near-ultraviolet wavelength ranges. In this case, the plurality of light emitting diode elements (or the light emitting diode module 201) may include at least one of a plurality of light emitting diode color conversion elements formed with a phosphor for emitting at least a part of light of blue, green, red, and amber wavelengths.
The phosphor used to form the color conversion layer is not limited to a specific type of the different color phosphor. In addition, when the color conversion layer does not include a phosphor, the color conversion layer may be filled with one or more of a transparent silicon binder, an organic polymer, an inorganic polymer, and a releasing material, but the present invention is not limited to the above description.
Further, according to various embodiments, the color conversion layer is not limited to the above-described one containing a phosphor or one containing at least one of a transparent silicon binder, an organic polymer, an inorganic polymer, and a releasing substance, and may contain various optical structural elements such as a polarizer (or a polarizing substance).
According to an embodiment, in the case where one pixel (e.g., 101, 103, 111, or 113) includes the light emitting diode module 201 in the display device 150, each of the light emitting diode elements 211 constituting the light emitting diode module 300 may be defined. Referring to fig. 2a and 2b, the led module 201 includes three led devices 211, but is not limited thereto, and may be formed of an led module 201 including a plurality of led devices 211.
According to various embodiments, it was confirmed that the arrangement of the plurality of subminiature light emitting diode elements included in one pixel is not configured in a predetermined direction. For example, referring to the led module 201, one subminiature led element is connected to the other two subminiature leds in the opposite direction (e.g., opposite polarity) to ground and to an electrode (e.g., a first signal line). At this time, when an ac current is supplied from the display device 150 to the light emitting diode module 201, all the subminiature light emitting diode elements included in the light emitting diode module 201 can operate based on the frequency of the ac current and the signal frequency.
Fig. 2a is a diagram showing a schematic configuration of a display device according to an embodiment of the present invention in which an inverter is used to supply ac power to the display device.
According to an embodiment, that is, according to an embodiment in which the light emitting diode module 201 is operated by supplying an alternating current to the display device 150, the inverter 241 for converting a Direct Current (DC) into an Alternating Current (AC) may be connected to at least one electrode (for example, the first signal line 231, WL) disposed in the display device 150, and the signal controller 243 for generating a signal for driving the light emitting diode module 201 in cooperation with the alternating current supplied through the first signal line may be connected to at least one data line (for example, the second signal line 233, BL) disposed in the display device 150.
According to an embodiment, two or more switches (e.g., 220, 222) may be connected between the first signal line 231 and the led module 201. At this time, the sources (sources) and drains (drains) of the first and second switches 220 and 222 connected to the first signal line 231 and the light emitting diode module 201 may be connected in opposite directions.
According to an embodiment, the signal controller 243 may generate a selection signal (e.g., a binary signal, a dial pulse, a multi-frequency signal) based on a signal received from a processor (not shown) of the electronic device 100 and transmit to each data line.
The current converted into the alternating current by the inverter 241 may be supplied to the light emitting diode module 201 of the display device 150 through the first signal line. At this time, the first and second switches 220 and 222 may selectively provide the alternating current to the light emitting diode module based on the frequency of the current received from the inverter and the selection signal received from the signal controller 243.
Fig. 2b is a diagram showing a schematic configuration of a display device according to an embodiment of the present invention in which an ac power is supplied to the display device by a distributor.
According to an embodiment, that is, according to an embodiment in which the light emitting diode module 201 is operated by supplying an alternating current to the display device 150, the current distributor 261 for distributing the current may be connected to at least one electrode (for example, the first signal line 235, WL) disposed in the display device 150, and the signal controller 243 for generating a signal for driving the light emitting diode module 201 in cooperation with the alternating current supplied through the first signal line may be connected to at least one data line (for example, the second signal line 233) BL disposed in the display device 150.
Therein, the current distributor 261 may comprise at least one inverter (e.g., the inverter 241 of fig. 2 a) for converting direct current to alternating current.
According to an embodiment, in the display device 150, the first signal line 231 may include two or more lines, for example, a cathode signal line 271 for supplying a negative (-) current (in this case, a voltage is a positive voltage) to the light emitting diode module 201 and an anode signal line 273 for supplying a positive (+) current (in this case, a voltage is a negative voltage) to the light emitting diode module 201.
According to an embodiment, the current distributor 261 may separate an ac current converted from a dc current to an ac current by the inverter 241 based on a phase in supplying power to the display device 150, and may selectively supply a current having a specified phase to the anode signal line 273 or the cathode signal line 271.
According to various embodiments, the current distributor 261 is not limited to supplying a positive current to the anode signal line 273 and supplying a negative current to the cathode signal line 271 in supplying power to the display device 150, and the current distributor 261 may supply a direct current to the anode signal line 273 and/or the cathode signal line 271 by distributing a point (or pattern) of time when the direct current is supplied.
According to an embodiment, the source and drain of the switch 251 for connecting the cathode signal line 271 and the light emitting diode module 201 and the switch 253 for connecting the anode signal line 273 and the light emitting diode module 201 are connected in opposite directions, so that the alternating current transmitted from the current distributor 261 can be selectively supplied to the light emitting diode module 201.
According to an embodiment, the signal controller 24 generates a selection signal (e.g., a binary signal, a dial pulse, a multi-frequency signal, etc.) based on a signal received from a processor (not shown) of the electronic device 100 and transmits the selection signal to each data line.
According to an embodiment, with reference to the first pixel 101 among a plurality of pixels (e.g., 101, 103, 111, or 113) formed in the display device 150, each pixel may include at least one switch 220. However, the present invention is not limited to this, and two or more pixels of a predetermined number may include one switch in the display device 150.
Fig. 3 shows a structure of a light emitting diode module in a display device according to an embodiment of the invention.
Referring to fig. 3, the led module 300 may include a plurality of led elements 313 and 315. Among a plurality of electrodes (e.g., the first electrode 301 and the second electrode 303) formed at the light emitting diode module, at least one electrode may be connected to a power source for supplying power and/or transmitting a signal to the light emitting diode elements 313, 315. For example, in the case where the first electrode 301 is connected to the first signal line 231 and/or the second signal line 233 through at least one switch, the second electrode 303 may be connected to a transparent conductive film (e.g., an indium tin oxide film) 320 formed in the display device 150 as a common electrode.
Also, in the case where the first electrode 301 is connected to a transparent conductive film (e.g., an ito film) 320 formed in the display device 150 as a common electrode, the second electrode 303 may be connected to the first signal line 231 and/or the second signal line 233 through at least one switch.
Note that, although the material of the common electrode formed in the display device 150 is described as an ito film, the material is not limited thereto, and various materials such as a graphene (graphene) film and a metal nanowire film may be used.
According to the above, the first signal line 231 and the second signal line 233 formed in the display device 150 may be connected to the light emitting diode module 300 including the first electrode 301, the second electrode 303, and at least one subminiature light emitting diode element 313, 315.
According to an embodiment, in the light emitting diode module 300, a "Sub Pixel" may include a first electrode 301, a second electrode 303, and at least one of a plurality of subminiature light emitting diode elements connected to the at least one electrode. The position of at least one sub-pixel 311 may be formed according to the first electrode 301 and the second electrode 303, but the upper and lower spaces excluding the first electrode 301 and the second electrode 303 may refer to a space where a plurality of ultra-small light emitting diodes may be actually disposed.
That is, one pixel (e.g., a unit pixel) may include a plurality of sub-pixels 311, and each sub-pixel may include one subminiature light emitting diode element 313 or 315 and/or include more than two subminiature light emitting diode elements 313 and 315.
According to an embodiment, the sub-pixel 311 is formed in a space divided by the first electrode 301 and the second electrode 303 in the light emitting diode module 300, and the sub-pixel 311 may be directly formed on a surface of the substrate of the light emitting diode module 300 or indirectly formed on an upper portion of the substrate in a spaced manner. And may be located in the same plane or in a different plane with at least one of the first electrode 301 or the second electrode 303.
According to an embodiment, the areas of the sub-pixels may be the same or different. Preferably, the unit area of the sub-pixel 311, i.e., the area of an arrangement region where two electrodes for independently driving the ultra-small light emitting diode elements 313 and 315 are arranged, is 50 μm2To 100000 μm2And more preferably, may be 100 μm2To 50000 μm2However, the unit area of the sub-pixel is not limited to the area. Preferably, the area of the sub-pixel 311 may be 50 μm2To 100000 μm 2。
The area of the sub-pixel 311 is less than 50 μm2In case (2), it may be difficult to prepare a unit electrode, and there may be a problem in manufacturing a subminiature light emitting diode because it is necessary to reduce the length of the subminiature light emitting diode. At more than 100000 μm2In the case of (2), the manufacturing cost may be increased due to the increase in the number of included subminiature light emitting diode elements, and there may be a problem in that the distribution is not uniform in the arranged subminiature light emitting diodes, and there is a problem in that a high resolution display device cannot be realized due to the reduction in the number of pixels included in a limited area of the display device 150. According to an embodiment, that is, according to a preferred embodiment of the present invention, the total number of the sub-pixels 311 included in the light emitting diode module 300 of the display device 150 may be 2 to 10000. But not limited to, the size of the embodied led module 300 may vary according to the area and/or resolution of the display device.
In accordance with one embodiment of the present invention,in each 100X 100 μm of the LED module 3002The number of subminiature led elements included in the area may be 2 to 100000. More preferably, it may be 10 to 10000. In the case where the included number is less than 2, the rate (%) of the change of the optical characteristics cannot be minimized in the 2 ultra small light emitting diode elements due to the defect of a part of the ultra small light emitting diode elements, so that it may be difficult to normally emit light by the ultra small light emitting diode elements 313 and 315 in the light emitting diode module 300, and there may be a problem that the defect of the display device 150 may be continuously caused. In the case where the included number exceeds 100000, the manufacturing cost may be increased, and there may be a problem in arranging the subminiature light emitting diode element.
According to various embodiments of the present invention, since a plurality of ultra-small led elements are included in the led module 300, in the conventional led display device, since one led is attached to a unit pixel position, when a defect occurs in the attached led element, a problem occurs in that the efficiency of the entire led display device is lowered and the display device itself may have a defect. For this reason, in a preferred embodiment of the present invention, the problem is attempted to be solved by making a unit pixel include a plurality of subminiature light emitting diodes. According to an embodiment, in the case of using one subminiature light emitting diode, one defect may cause a 100% change in optical characteristics, but the rate of the change in optical characteristics due to one of the defects may be reduced by increasing the number of subminiature light emitting diodes included in a unit pixel. Therefore, the defect rate of the display device 150 can be reduced by including a plurality of ultra-small led elements in the led module 300. Thus, even when a defect occurs in some of the subminiature light-emitting diode elements included in the unit pixels, since the other subminiature light-emitting diode elements are normal, the subminiature light-emitting diode elements 313 and 315 can normally emit light from the sub-pixels 311 as a whole, thereby minimizing the defect rate of the light-emitting diode display device as a whole and maximizing the light-emitting efficiency.
Furthermore, according to an embodiment of the present invention, in the process of arranging the subminiature light emitting diode elements connected to the first electrode 301 and the second electrode 303 of the light emitting diode module 300, it is possible to manufacture the subminiature light emitting diode module in a non-uniform polarity manner.
Referring to fig. 3, the first and second subminiature light emitting diode elements 313 and 315 of the light emitting diode module 300 may be arranged in opposite directions (e.g., opposite polarities) in a process of being connected to the first and second electrodes 301 and 303.
According to an embodiment, in the first subminiature light emitting diode element 313, a first pole is connected to the first electrode 301 (in this case, a second pole of the first subminiature light emitting diode element 313 is connected to the second electrode 303) so as to emit light when receiving a positive current, and a first pole of the second subminiature light emitting diode element 315 is connected to the second electrode 303 (in this case, a second pole of the second subminiature light emitting diode element 315 is connected to the first electrode 301) so as to emit light when receiving a negative current.
Generally, a display device may output a graphic interface using a direct current. At this time, in the case where at least a part of the light emitting diode elements constituting the display device do not operate, the corresponding position of the display device may be displayed as a Dead Pixel (Dead Pixel) or a spot may be generated, and thus the rate of change of the optical characteristics may be increased.
According to various embodiments of the present invention, as described above, in the case where the plurality of ultra-small light emitting diode elements 313 and 315 included in the light emitting diode module 300 are arranged in opposite directions (for example, at least a part of the ultra-small light emitting diode elements have polarities crossing each other), and are controlled by an ac current so as to output a graphic interface by the light emitting diode module 300, even if a part of the ultra-small light emitting diode elements constituting the display device 150 does not operate, the ultra-small light emitting diode elements connected to the electrodes with the other polarities can be operated.
Therefore, based on the ac current supplied to the light emitting diode module 300 at a predetermined time point, the adjacent subminiature light emitting diode elements having the polarities connected in opposite directions are operated in an alternating manner (or alternately), so that the occurrence of dead pixels and/or spots can be prevented, and thus the rate of change in optical characteristics can be minimized.
Fig. 4 illustrates a process of manufacturing a light emitting diode module according to an embodiment of the present invention.
According to a first embodiment of manufacturing a light emitting diode module (e.g., the light emitting diode module 300 of fig. 3) of the present invention, the ultra-small light emitting diode module 300 may be manufactured by including the steps of: a step 1 of supplying a solution containing a plurality of ultra-small light emitting diode elements to an electrode line for ultra-small light emitting diodes including a base substrate, a first electrode formed on the base substrate, and a second electrode formed so as to be spaced apart from the first electrode; step 2 of supplying a power source to the electrode lines so that the first electrode and the second electrode are simultaneously connected to a plurality of ultra-small light emitting diode elements; and step 3, self-arranging a plurality of subminiature light-emitting diode elements.
First, a method of manufacturing an electrode wire for a subminiature light-emitting diode will be described. Specifically, fig. 2a and 2b may be perspective views illustrating a manufacturing process of manufacturing an electrode line formed on a base substrate according to a preferred embodiment of the present invention. However, the manufacturing process of the electrode wire for a subminiature light-emitting diode is not limited to the manufacturing process described later.
According to an embodiment, the base substrate 400 formed with the electrode lines is illustrated in fig. 4 (a), and preferably, as the base substrate 400, one of a glass substrate, a crystal substrate, a sapphire substrate, a plastic substrate, and a flexible polymer film may be used. More preferably, the substrate may be transparent. However, the present invention is not limited to the above-mentioned type, and any type may be used as long as it is a base substrate on which a common electrode (or common electrode) can be formed.
The area of the base substrate 400 is not limited, and the area of the base substrate 400 may be changed by considering the area of the first electrode to be formed on the base substrate 400, the area of the second electrode, the size of the subminiature light emitting diode elements connected to the first electrode and the second electrode, and the number of the subminiature light emitting diode elements connected thereto. Preferably, the thickness of the base substrate may be 100 μm to 1mm, but is not limited thereto.
According to an embodiment, as shown in part (b) of fig. 4, a Photoresist (PR) 401 may be coated on the base substrate 400. The photoresist may be a photoresist commonly used in the art to which the present invention pertains. Among them, according to an embodiment of the method of applying the photoresist to the base substrate 400, one of spin coating, spray coating and screen printing may be used, and preferably, a spin coating method may be used, but is not limited thereto, and a specific method may be used as a method known in the art to which the present invention pertains. The photoresist 401 applied to the base substrate 400 may have a thickness of 0.1 μm to 10 μm. However, the thickness of the applied photoresist 401 may be changed in consideration of the thickness of the electrode to be deposited on the base substrate later.
As described above, after forming the photoresist 401 layer on the base substrate 400, as shown in part (c) of fig. 4, after placing the mask 402 on the photoresist 401 layer, on which the electrode lines, in which the respective patterns 402a, 402b are drawn, are arranged in an alternating manner with each other on the same plane as the first electrode and the second electrode and are spaced apart from each other, ultraviolet rays may be exposed at an upper portion of the mask 402.
The photoresist in the base substrate 400, which is not exposed to light, may be subjected to a general step of removing by dipping in a photoresist solvent, whereby the portion of the photoresist layer to be exposed where the electrode lines are to be formed, as shown in fig. 4 (d), may be removed. According to an embodiment, the width of the corresponding pattern (e.g., 402a) of the first electrode line corresponding to the electrode line for the subminiature light emitting diode may be 100nm to 50 μm, and the width of the corresponding pattern (e.g., 402b) of the second electrode line may be 100nm to 50 μm, but is not limited thereto.
According to an embodiment, as shown in fig. 4 (e), an electrode forming substance 403 in the shape of an electrode line mask 402 may be evaporated on a portion where the photoresist is removed. When the electrode forming material is the first electrode, the electrode forming material may be one or more metal materials selected from the group consisting of aluminum, titanium, indium, gold, and silver, or one or more transparent materials selected from the group consisting of indium tin oxide, ZnO: Al, and a Carbon Nanotube (CNT) -conductive polymer (polmer) composite. In the case where the electrode-forming substance is two or more, the first electrode may preferably have a structure in which two or more substances are stacked, and more preferably, the first electrode may have a structure in which two substances of titanium/gold are stacked. However, the first electrode is not limited to the above description.
When the electrode-forming substance is a second electrode, the electrode-forming substance may be one or more metal substances selected from the group consisting of aluminum, titanium, indium, gold, and silver, or one or more transparent substances selected from the group consisting of indium tin oxide, ZnO, Al, and a carbon nanotube-conductive polymer composite. In the case where the electrode-forming substance is two or more species, the second electrode may preferably have a structure in which two or more species are stacked, and more preferably, may have a structure in which two species of titanium/gold are stacked. However, the second electrode is not limited to the description.
The substances forming the first and second electrodes may be the same or different. The electrode forming material may be evaporated by one of methods such as a thermal evaporation method, an electron Beam (E Beam) evaporation method, a sputtering evaporation method, and a screen printing method, and preferably, a thermal evaporation method may be used, but is not limited thereto.
After the electrode forming material 403 is deposited, as shown in fig. 4 (f), the photoresist 401 layer applied to the base substrate 400 is removed by using one of photoresist removers of acetone, N-methylpyrrolidone (NMP), and Dimethylsulfoxide (DMSO), thereby forming electrode lines 406 and 407 deposited on the base substrate 400. The electrode lines 406 and 407 evaporated on the base substrate 400 may be formed in a predetermined pattern by passing through the first electrode 410 and the second electrode 430. Also, the first electrode 410 and/or the second electrode 430 illustrated in fig. 4 may be composed of the same or similar electrodes as the first electrode 301 and the second electrode 303 illustrated in fig. 3.
In the electrode lines 406, 407 of the present invention manufactured by the method, it is preferable that the unit electrode area, that is, the area of the arrangement region where two electrodes capable of being independently driven by arranging the ultra-small light emitting diode elements are arranged is 1 μm2To 100cm2More preferably, it may be 10 μm2To 100mm2However, the area of the unit electrode is not limited to the area. Also, the electrode line may include one or more unit electrodes.
Further, in the electrode line, a spacing interval between the first electrode 410 and the second electrode 430 may be less than a length of the subminiature light emitting diode element 413. Thus, the micro light emitting diode element 413 can be sandwiched between the first electrode 410 and the second electrode 430 or connected to both electrodes in a lying state.
On the other hand, as long as it is formed to be spaced apart from the first electrode 410 and the ultra-small light emitting diode element 413 can be mounted, it can be used as the electrode line of the present invention, and the specific configuration of the first electrode 410 and the second electrode 430 spaced apart on the same plane can be changed according to the purpose thereof.
According to an embodiment, a portion (g) of fig. 4 illustrates a first electrode 410 formed on a base substrate 400, a second electrode 430 spaced apart from the first electrode on the same plane, and a solution (here, a solvent 440) including a plurality of ultra-small light emitting diode elements 413. The solution including the subminiature light emitting diode element 413 may be applied to an electrode region of the base substrate 400 where the first electrode 410 and the second electrode 430 are formed.
Thereafter, according to an embodiment of step 2, the subminiature led elements 313, 315 included in the led module 300 can be arranged in a non-uniform manner. In order to minimize the rate (%) of change in optical characteristics of the display device 150, it is necessary to connect the plurality of ultra-small light emitting diode elements having opposite polarities uniformly (e.g., approximately 1:1) within a predetermined range in the course of connecting the plurality of ultra-small light emitting diode elements included in the light emitting diode module 300 in a non-uniform arrangement.
According to an embodiment, as shown in part (h) of fig. 4, in order to make the plurality of ultra-small light emitting diode elements connected to the first electrode 410 and the second electrode 430 have opposite polarities in the number within a specified range (e.g., close to 1:1) and to simultaneously perform the connection, a step of making the plurality of ultra-small light emitting diode elements self-aligned by supplying an ac power to the electrode lines may be performed.
The plurality of ultra-small light emitting diode elements 313 and 315 included in the ultra-small light emitting diode module according to the present invention rotate the plurality of ultra-small light emitting diode elements 313 and 315, which are self-aligned according to the change of the polarity supplied to the first electrode 410 and the second electrode 430, by supplying the ac power to the first electrode 410 and the second electrode 430, and can be simultaneously connected to the first electrode 410 and the second electrode 430, as shown in fig. 4 (i).
In the case of a general light emitting diode element, the light emitting diode element can be directly and simultaneously connected to electrodes which are physically arranged and separated from each other. For example, the light emitting diode elements 313 and 315 may be manually arranged between different ones of the planar electrodes so as to lie on their sides.
However, as in the present invention, it is difficult to directly and physically arrange the subminiature light emitting diode elements, and thus there may occur a problem that the subminiature light emitting diode elements cannot be simultaneously connected to mutually different subminiature electrodes spaced apart from each other on the same plane. Further, the manufacturing cost of the light emitting diode module can be increased by arranging at least some of the subminiature light emitting diode elements 313 and 315 in different directions from each other. Further, when the ultra-small light emitting diode elements 313 and 315 are cylindrical, the ultra-small light emitting diode elements 313 and 315 cannot be self-aligned by simply throwing the electrodes, and the cylindrical shape may cause a problem of moving from the electrodes in a rolling manner.
Thus, the present invention can solve the above-mentioned problems by supplying an ac power to the electrode lines to actively connect the micro-led elements to the two different electrodes while rotating together.
According to an embodiment, the ac power source may be a variable power source having an amplitude and a period, and the waveform of the ac power source may be a pulse wave (pulse) formed by a plurality of waveforms (or signals) of a sine wave (sin) or a non-sine wave. For example, a variable power source having amplitude and cycle can be prepared by supplying an ac power source for converting dc into ac by the inverter 241, or by repeatedly supplying a dc power source of 0V, 30V, 0V, and 30V to the first electrode 410 1000 times per second, and repeatedly supplying a dc power source of 0V, 30V, and 0V to the second electrode 430 in a manner opposite to the first electrode 410.
According to one embodiment, the voltage (amplitude) of the power supply may be 0.1V to 1000V, and the frequency may be 10Hz to 100 GHz. The self-aligned subminiature light emitting diode elements 313 and 315 are included in the solvent 440 and fed to the electrode lines, the solvent 440 is evaporated while being coated on the electrodes, and the plurality of subminiature light emitting diode elements are induced by an electric field formed by a potential difference between the two electrodes, so that charges are induced in the subminiature light emitting diode elements 313 and 315 in an asymmetric manner, thereby allowing self-alignment between two different electrodes of the subminiature light emitting diode elements 313 and 315 having opposite ends. According to an embodiment, the subminiature led device 313, 315 may be simultaneously connected to two electrodes different from each other by supplying power in a time range of 5 seconds to 120 seconds.
On the other hand, in the step 2, the number (e.g., n) of the subminiature light emitting diode elements 313, 315 connected to both the first electrode 410 and the second electrode 430 may be determined based on a plurality of variables that may be adjusted in the step 2. The variables include a voltage V (or a potential difference) of a power source to be supplied, a frequency f (hz) of the power source, a concentration C (weight percentage of the subminiature light-emitting diode) of a solution containing the subminiature light-emitting diode element, a distance Z between two electrodes, and an aspect ratio AR of the subminiature light-emitting diode (where AR is H/D, and D is a diameter of the subminiature light-emitting diode). Thus, the number N of the subminiature light emitting diode elements 313, 315 connected to both the first electrode 410 and the second electrode 430 may be proportional to the voltage V, the frequency F, the concentration C of the solution containing the subminiature light emitting diode elements, and the aspect ratio AR of the subminiature light emitting diodes, and may be inversely proportional to the interval Z between the two electrodes.
According to an embodiment, the plurality of ultra-small light emitting diode elements are self-aligned between two electrodes different from each other according to an induction of an electric field formed by a potential difference between the two electrodes, and the intensity of the electric field may be proportional to the potential difference between the two electrodes and inversely proportional to the interval Z between the two electrodes, the greater the intensity of the electric field, the greater the number of ultra-small light emitting diode elements connected to the electrodes is.
According to an embodiment, the concentration C (weight percentage of the subminiature light emitting diode) of the solution containing the subminiature light emitting diode elements is increased, the number of light emitting diode elements connected to the electrode is increased.
According to an embodiment, since the charge difference formed in the ultra-small led elements 313 and 315 changes according to the frequency with respect to the frequency f (hz) of the power supply, the number (e.g., N) of the ultra-small led elements 313 and 315 connected to both electrodes can be increased as the frequency increases. However, when the frequency is higher than a predetermined value, the charge induction is reduced and/or eliminated, and thus the number (for example, N) of the micro light emitting diode elements 313 and 315 connected to the electrodes can be reduced.
According to an embodiment, as the aspect ratio of the small-sized light emitting diode element, when the aspect ratio is increased, the induced charge generated by the electric field can be increased, and thereby, a larger number of the ultra-small-sized light emitting diode elements 313 and 315 can be arranged. Further, when considering the electrode lines having a limited area from the side of the space where the ultra-small light emitting diode elements 313 and 315 can be arranged, the number of ultra-small light emitting diode elements connectable to the electrode lines can be increased in the case where the aspect ratio is increased due to the diameter of the ultra-small light emitting diode elements being smaller in the state where the length of the ultra-small light emitting diode elements 313 and 315 is fixed.
According to various embodiments of the present invention, there is an advantage that the number of light emitting diode elements connected to an electrode can be adjusted according to purposes by adjusting the various elements.
On the other hand, in step 2 of the present invention, even if power is supplied to the electrode lines in accordance with the aspect ratio of the ultra-small light emitting diode elements 313 and 315, it may be difficult to self-align the ultra-small light emitting diode elements. According to an embodiment, the aspect ratio of the ultra-small light emitting diode device 313, 315 may be 1.2 to 100, preferably 1.2 to 50, more preferably 1.5 to 20, and most preferably 1.5 to 10. When the aspect ratio of the ultra-small light emitting diode elements 313 and 315 is less than 1.2, there is a problem that the ultra-small light emitting diode elements 313 and 315 may not be aligned by themselves when power is supplied to the electrode lines. Further, in the case where the aspect ratio is larger than 100, the voltage of the power supply necessary for self-alignment may be reduced, but in the case where a subminiature light emitting diode element is manufactured by a method such as dry etching, there is a problem that it is difficult to manufacture an element having an aspect ratio larger than 100 due to limitations of processes.
Preferably, in the step 2, the electrode lines 406 and 407 which can be practically mounted to the ultra-small light emitting diode elements 313 and 315 are formed every 100 × 100 μm2The number of the ultra-small light emitting diode elements 313, 315 of the area may be 2 to 100000, and more preferably, may be 10 to 10000. By including a plurality of subminiature light emitting diode elements 313, 315 in each subminiature light emitting diode module 300, degradation or loss of function due to a portion of the plurality of subminiature light emitting diode elements being defective may be minimized. Also, in the case where more than 100000 ultra-small light emitting diode elements 313, 315 are included, the manufacturing cost may be increased and a problem may occur in arranging the ultra-small light emitting diode elements.
On the other hand, the method for manufacturing the ultra-small led module 300 according to an embodiment of the invention is step 3 after the step 2, and the step 3 may further include a step of forming a metal ohmic layer on the connection portions between the first electrode 410 and the second electrode 430 and the ultra-small led elements 313 and 315.
The reason why the metal ohmic layer is formed at the connection portion is that when power is supplied to two different electrodes connected to the plurality of ultra-small light emitting diode elements 313 and 315, the ultra-small light emitting diode elements can be made to emit light. At this time, a large resistance may be generated between the electrode and the subminiature light emitting diode element 313, 315, and thus, in order to reduce such resistance, a step of forming a metal ohmic layer may be included.
According to an embodiment, the metal ohmic layer may be formed by the following process, but is not limited thereto as long as it is formed by a general method for forming the metal ohmic layer.
First, a photoresist may be coated at a thickness of 2 to 3 μm on the upper portion of the subminiature light emitting diode module 300 subjected to the step 2. Preferably, the coating may use one of spin coating, spray coating, and screen printing, but is not limited thereto. Thereafter, the photoresist layer on the remaining portion except the photoresist layer on the upper portion of the electrode is cured by irradiating ultraviolet rays toward the coated photoresist layer on the lower portion of the base substrate 400 of the ultra-small light emitting diode module 300, and then the photoresist layer on the upper portion of the electrode which is not cured can be removed by using a general photoresist solvent.
According to an embodiment of removing the upper portion of the electrode of the photoresist, the coating may be performed by vacuum evaporation or electrochemical evaporation of gold or silver and/or electrospray (electrospraying) of gold nano-crystal or silver nano-crystal, but the evaporation material and the evaporation method are not limited to the above description. Preferably, the thickness of the coated metal layer may be 5nm to 100nm, but is not limited thereto.
Thereafter, the metal layer not being the electrode portion may be removed together with the photoresist by using one of photoresist removers of acetone, N-methylpyrrolidone and dimethylsulfoxide, and after the removal, metal ohmic layers may be formed between both ends of the insulating film not coating the subminiature light emitting diode elements 313, 315 and the electrodes by heat treatment at a temperature of 500 to 600 degrees.
Fig. 5 illustrates a structure in which light emitting diode modules are arranged in pixels in a display device according to an embodiment of the present invention.
According to an embodiment, the pixels 101, 103, 111 and/or 113 disposed on the display device 150 shown in fig. 1 may include at least one led module 300. The led module 300 may include a first electrode 301 and a second electrode 303, at least one of which may be connected to at least one of a first signal line 231, a second signal line 233 and a ground 501 included in the display device 150. For example, the first electrode 301 of the led module 300 may be connected to at least one of the first signal line 231 and the second signal line 233 included in the display device 150, and the second electrode 303 may be connected to the ground 501 included in the display device 150. In the case of the ground connected to the second electrode 303 of the light emitting diode module 300, the ground may be composed of a common electrode for connecting two or more grounds provided to the light emitting diode modules included in the plurality of pixels to one.
According to an embodiment, in the case where the display device 150 included in the electronic device 100 is configured of a touch screen, the ground of the touch screen may be formed at one layer of the display device 150. In this case, a transparent conductive film 503 made of indium tin oxide is used to form a transparent electrode in one layer of the display device 150, thereby forming a ground of the touch panel. The common electrode formed by the second electrode 303 of the led module 300 and the transparent conductive film 503 on one layer of the display device 150 may be the same as or similar to the transparent conductive film 320 connected to at least one electrode in the led module 300 of fig. 3. According to an embodiment, one layer of the display device 150 may represent one layer of a plurality of layers formed at one side of the display device 150.
According to an embodiment of the present invention, a display device including a subminiature light emitting diode module includes: a panel in which first signal lines and second signal lines are arranged in a lattice form; a first electrode connected to the first signal line and the second signal line; two or more switches for connecting the first signal line and the second signal line to the first electrode; a second electrode grounded; and an electrode assembly including a first electrode and a second electrode, the first electrode and the second electrode including light emitting diode modules connected to the plurality of ultra-small light emitting diode elements, the second electrode being connected to a common electrode formed of one layer of the panel, at least one different light emitting diode module being grounded to the common electrode, the two or more switches selectively supplying the current supplied from the first signal line to the first electrode based on a signal of the first signal line and a signal of the second signal line.
According to various embodiments, the led module comprises a plurality of subminiature led elements connected along at least a portion of a direction having a polarity opposite to the first and second electrodes.
According to various embodiments, in the light emitting diode module, a solution containing a plurality of ultra-small light emitting diode elements is poured into an electrode assembly, and the plurality of ultra-small light emitting diode elements are simultaneously connected to a first electrode and a second electrode by supplying an ac power to the electrode assembly, thereby forming a plurality of sub-pixels.
According to various embodiments, in the sub-pixels, are comprised in 100 × 100 μm2The number of the plurality of subminiature light emitting diode elements in the area may be 2 to 100000.
According to various embodiments, the plurality of subminiature light emitting diode elements may include at least one of a plurality of subminiature light emitting diode elements for emitting light in a blue, green, red, amber wavelength range.
According to various embodiments, the subminiature light emitting diode element has a length of 100nm to 10 μm, and the insulating film may be formed by including an active layer in an outer circumferential surface of the subminiature light emitting diode element.
According to various embodiments, the plurality of subminiature led devices connected to the first and second electrodes may be disposed in parallel with the substrate of the led module.
According to various embodiments, the common electrode is composed of an indium tin oxide film.
According to various embodiments, the display device including the subminiature light emitting diode module further includes an inverter supplying the first signal line by converting a direct current into an alternating current, and the display device including the subminiature light emitting diode module may selectively supply the alternating current to the first electrode based on a signal of the first signal line and a signal of the second signal line.
According to various embodiments, the first signal line connected to the light emitting diode module may be composed of more than two lines.
The present invention has been described above mainly by way of examples, but these are merely examples and are not intended to limit the embodiments of the present invention, and it will be apparent to those skilled in the art to which the present invention pertains that various modifications and applications not illustrated above can be made without departing from the essential characteristics of the present invention. For example, each of the components specifically shown in the embodiments of the present invention may be implemented by being modified. Further, differences associated with such modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

Claims (16)

1. A display device, comprising:
a panel;
first and second signal lines disposed on the panel;
a first electrode disposed on the panel and connected to the first signal line and the second signal line;
a second electrode spaced apart from the first electrode and connected to ground;
a plurality of subminiature light emitting diode elements connected to the first electrode and the second electrode; and
two or more switches connecting the first signal line and the second signal line to the first electrode,
wherein the first electrode is supplied with a current supplied through the first signal line based on a signal of the first signal line and a signal of the second signal line,
the second electrode includes a first portion disposed at one side of the first electrode and a second portion disposed at the other side of the first electrode and electrically connected to the first portion,
the subminiature light emitting diode element includes a first subminiature light emitting diode element disposed on the first portion of the second electrode and the first electrode, and a second subminiature light emitting diode element disposed on the second portion of the second electrode and the first electrode, and
First ends of some of the first subminiature light emitting diode elements are disposed on the first portion of the second electrode, and first ends of other of the first subminiature light emitting diode elements are disposed on the first electrode.
2. The display device according to claim 1, wherein at least some of the plurality of subminiature light emitting diode elements are connected to the first electrode and the second electrode in opposite polarities.
3. The display device according to claim 2,
the two or more switches selectively provide the current supplied through the first signal line to the first electrode based on the signal of the first signal line and the signal of the second signal line.
4. The display device according to claim 1, wherein the subminiature light emitting diode element comprises a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulating film surrounding at least an outer surface of the active layer, and
the length of the subminiature light emitting diode element ranges from 100nm to 10 μm.
5. The display device according to claim 1, wherein the plurality of subminiature light emitting diode elements are disposed parallel to the panel.
6. The display device according to claim 1, further comprising an inverter configured to convert direct current into alternating current and supply the alternating current to the first signal line,
wherein the display device selectively supplies the alternating current to the first electrode based on the signal of the first signal line and the signal of the second signal line.
7. The display device according to claim 1, wherein the first signal line connected to the subminiature light emitting diode element comprises two or more lines.
8. The display device according to claim 1, further comprising a common electrode provided on the panel and connected to the second electrode,
wherein the plurality of subminiature light emitting diode elements are grounded to the common electrode.
9. The display device according to claim 8, wherein the common electrode is formed of an indium tin oxide film.
10. The display device according to claim 8, wherein the common electrode is formed of a graphene film.
11. The display device according to claim 8, wherein the common electrode is formed of a metal nanowire film.
12. The display device according to claim 1, wherein a solution including the plurality of subminiature light-emitting diode elements is introduced over the first electrode and the second electrode, an alternating current power source is supplied to the first electrode and the second electrode, the plurality of subminiature light-emitting diode elements are connected to the first electrode and the second electrode, and a plurality of sub-pixels are formed.
13. The display device of claim 1, wherein the thickness is 100 x 100 μm2The number of the plurality of subminiature light emitting diode elements in an area ranges from 2 to 100000.
14. The display device according to claim 1, wherein the plurality of subminiature light emitting diode elements comprises at least one subminiature light emitting diode element that emits light in blue, green, red, and amber wavelength bands.
15. The display device according to claim 1, wherein the plurality of subminiature light emitting diode elements include at least one color conversion element in which a color conversion layer is formed, through which light having some of green, red, and amber wavelengths converted from light in a blue wavelength band is emitted.
16. The display device according to claim 1, wherein the plurality of subminiature light emitting diode elements include at least one color conversion element having a color conversion layer formed therein, through which light having some of blue, green, red, and amber wavelengths converted from light in ultraviolet and near-ultraviolet bands is emitted.
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