CN1110858C - 介质分隔式半导体器件 - Google Patents
介质分隔式半导体器件 Download PDFInfo
- Publication number
- CN1110858C CN1110858C CN98122333A CN98122333A CN1110858C CN 1110858 C CN1110858 C CN 1110858C CN 98122333 A CN98122333 A CN 98122333A CN 98122333 A CN98122333 A CN 98122333A CN 1110858 C CN1110858 C CN 1110858C
- Authority
- CN
- China
- Prior art keywords
- diffusion layer
- conduction type
- dielectric
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000009792 diffusion process Methods 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000003550 marker Substances 0.000 claims description 27
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- -1 oxonium ion Chemical class 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 244000287680 Garcinia dulcis Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76275—Vertical isolation by bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP310886/1997 | 1997-11-12 | ||
JP310886/97 | 1997-11-12 | ||
JP9310886A JP3061020B2 (ja) | 1997-11-12 | 1997-11-12 | 誘電体分離型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1218296A CN1218296A (zh) | 1999-06-02 |
CN1110858C true CN1110858C (zh) | 2003-06-04 |
Family
ID=18010572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98122333A Expired - Fee Related CN1110858C (zh) | 1997-11-12 | 1998-11-12 | 介质分隔式半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6278156B1 (zh) |
JP (1) | JP3061020B2 (zh) |
KR (1) | KR100325497B1 (zh) |
CN (1) | CN1110858C (zh) |
TW (1) | TW396505B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4206543B2 (ja) * | 1999-02-02 | 2009-01-14 | 株式会社デンソー | 半導体装置 |
EP1684358A3 (en) * | 1999-08-31 | 2008-04-23 | Matsushita Electric Industrial Co., Ltd. | High voltage SOI semiconductor device |
JP2001196566A (ja) * | 2000-01-07 | 2001-07-19 | Sony Corp | 半導体基板およびその製造方法 |
JP2001230315A (ja) * | 2000-02-17 | 2001-08-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2001274265A (ja) * | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | 半導体装置 |
JP3415581B2 (ja) | 2000-11-29 | 2003-06-09 | Necエレクトロニクス株式会社 | 半導体装置 |
KR100366923B1 (ko) * | 2001-02-19 | 2003-01-06 | 삼성전자 주식회사 | 에스오아이 기판 및 이의 제조방법 |
JP5525736B2 (ja) * | 2009-02-18 | 2014-06-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
CN102201448B (zh) * | 2011-05-16 | 2013-01-30 | 四川长虹电器股份有限公司 | 高压pmos双槽隔离的soi晶片 |
CN116565016A (zh) | 2022-01-27 | 2023-08-08 | 达尔科技股份有限公司 | 半导体结构及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
US5565699A (en) * | 1993-07-22 | 1996-10-15 | Sanyo Electric Co., Ltd. | Semiconductor integrated circuit device |
US5625212A (en) * | 1992-03-23 | 1997-04-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method of manufacturing the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5113236A (en) | 1990-12-14 | 1992-05-12 | North American Philips Corporation | Integrated circuit device particularly adapted for high voltage applications |
JP2692402B2 (ja) | 1991-02-26 | 1997-12-17 | 日本電気株式会社 | 半導体素子の製造方法 |
JP2833394B2 (ja) | 1992-12-25 | 1998-12-09 | 株式会社デンソー | 高耐圧半導体装置 |
JPH07226503A (ja) | 1994-02-14 | 1995-08-22 | Nissan Motor Co Ltd | 横形絶縁ゲートバイポーラトランジスタ |
US6104078A (en) * | 1994-03-09 | 2000-08-15 | Denso Corporation | Design for a semiconductor device having elements isolated by insulating regions |
JP3293349B2 (ja) | 1994-08-26 | 2002-06-17 | 松下電工株式会社 | 半導体装置及びその製造方法 |
JP3575908B2 (ja) * | 1996-03-28 | 2004-10-13 | 株式会社東芝 | 半導体装置 |
JP2962250B2 (ja) | 1996-11-12 | 1999-10-12 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
KR100303918B1 (ko) | 1997-12-08 | 2001-11-30 | 윤종용 | 반도체커패시터제조설비및이를이용한반도체커패시터제조방법 |
-
1997
- 1997-11-12 JP JP9310886A patent/JP3061020B2/ja not_active Expired - Fee Related
-
1998
- 1998-11-11 TW TW087118758A patent/TW396505B/zh not_active IP Right Cessation
- 1998-11-12 KR KR1019980048313A patent/KR100325497B1/ko not_active IP Right Cessation
- 1998-11-12 CN CN98122333A patent/CN1110858C/zh not_active Expired - Fee Related
- 1998-11-12 US US09/191,389 patent/US6278156B1/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
US5625212A (en) * | 1992-03-23 | 1997-04-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method of manufacturing the same |
US5565699A (en) * | 1993-07-22 | 1996-10-15 | Sanyo Electric Co., Ltd. | Semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
US6278156B1 (en) | 2001-08-21 |
TW396505B (en) | 2000-07-01 |
JP3061020B2 (ja) | 2000-07-10 |
KR19990045214A (ko) | 1999-06-25 |
CN1218296A (zh) | 1999-06-02 |
KR100325497B1 (ko) | 2002-08-24 |
JPH11145277A (ja) | 1999-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030418 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20030418 Address after: Kawasaki, Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030604 Termination date: 20091214 |