CN111081516B - Cleaning method of ion implanter - Google Patents
Cleaning method of ion implanter Download PDFInfo
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- CN111081516B CN111081516B CN201911375758.2A CN201911375758A CN111081516B CN 111081516 B CN111081516 B CN 111081516B CN 201911375758 A CN201911375758 A CN 201911375758A CN 111081516 B CN111081516 B CN 111081516B
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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Abstract
The invention relates to the technical field of semiconductor processing, in particular to a method for cleaning an ion implanter in an ion implantation process. The method comprises the following steps: determining the species of a previous ion source and the species of an ion source to be converted in the ion implantation process; applying an electric field, and introducing a first processing gas into the ion implanter according to the species of the previous ion source so as to ionize the first processing gas to form a first processing ion beam; enabling the first processing ion beam to perform first-stage cleaning processing on a reaction chamber of the ion implanter; introducing a second treatment gas into the ion implanter according to the species of the ion source to be converted so as to ionize the second treatment gas to form a second treatment ion beam; so that the second processing ion beam irradiates the reaction chamber and the pipeline of the ion implanter and carries out the second stage cleaning treatment on the reaction chamber and the pipeline of the ion implanter. According to the invention, different cleaning gases are introduced into the ion implanter according to the types of the ion sources, so that the problem that the related technology is difficult to adapt to the cleaning requirements in various ion implantation processes can be solved.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a cleaning method of an ion implanter in an ion implantation process.
Background
The implantation process is an important part of the semiconductor manufacturing process, and especially, the ion implantation steps involved in the front end of the integration are very many, so the ion implantation efficiency is significant to the productivity of the semiconductor manufacturer.
When the machine completes one ion implantation, deposits are adhered to the inside of the reaction chamber and the pipeline of the ion source, and if the deposits are not removed in time, the adhered deposits are heated and volatilized during the next ion implantation to pollute ions in the next ion implantation. Therefore, in the related art, before switching the gas source, the argon ion beam is usually used to bombard the inner wall of the ion source reaction chamber to remove the deposit deposited in the ion source reaction chamber.
However, with the development of ion implantation technology, the types of ions required in the implantation process are increasing, and it is difficult to adapt to the cleaning requirements in various ion implantation processes only by the argon ion beam cleaning technology, thereby reducing the cleaning efficiency and causing the residual deposits in the ion source reaction chamber.
Disclosure of Invention
The invention provides a cleaning method of an ion implanter, which can solve the problem that the related technology is difficult to adapt to the cleaning requirement in various ion implantation processes.
In another aspect, the present invention provides a method for cleaning an ion implanter, comprising the steps of:
determining the kind of a previous ion source in the ion implantation process;
determining ion source species to be converted in the ion implantation process;
applying an electric field, and introducing a first processing gas into an ion implanter according to the species of the previous ion source so as to ionize the first processing gas to form a first processing ion beam;
causing the first processing ion beam to perform a first stage cleaning process on a reaction chamber of the ion implanter;
introducing a second treatment gas into the ion implanter according to the species of the ion source to be converted, so that the second treatment gas is ionized to form a second treatment ion beam;
and irradiating the reaction chamber and the pipeline of the ion implanter by the second processing ion beam, and performing second-stage cleaning treatment on the reaction chamber and the pipeline of the ion implanter.
Optionally, the preceding ion source species comprises: arsine, boron trifluoride, phosphine, and germanium tetrafluoride.
Optionally, the ion source species to be converted includes: arsine, boron trifluoride, phosphine, and germanium tetrafluoride.
Optionally, the step of introducing a first processing gas into the ion implanter according to the ion source species in the previous ion implantation process to perform a first stage cleaning process on the reaction chamber and the pipeline of the ion implanter includes:
and introducing argon into the ion implanter according to the ion source type in the previous ion implantation process, and performing first-stage cleaning treatment on the reaction chamber and the pipeline of the ion implanter.
Optionally, the applying an electric field, and introducing a first processing gas into the ion implanter according to the type of the preceding ion source, so that the first processing gas is ionized to form a first processing ion beam, includes:
applying an electric field;
introducing a first treatment gas into the ion implanter according to the type of the ion source before the ion implanter;
the applied electric field causes the first process gas to ionize to form ions;
and accelerating ions formed by ionizing the first processing gas to form a first processing ion beam with the energy range of 60 keV-80 keV.
Optionally, the time of the first stage cleaning treatment is 3min to 20min.
Optionally, according to the species of the ion source to be converted, introducing a second processing gas into the ion implanter, so that the second processing gas is ionized to form a second processing ion beam, including:
introducing a second treatment gas into the ion implanter according to the species of the ion source to be converted;
the applied electric field causes the second process gas to ionize to form ions;
and accelerating ions formed by ionizing the second processing gas to form a second processing ion beam with the energy range of 45 keV-55 keV.
Optionally, the time of the second stage cleaning treatment is 1min to 5min.
Optionally, after the causing the second processing ion beam to irradiate the reaction chamber and the pipeline of the ion implanter and performing the second-stage cleaning processing on the reaction chamber and the pipeline of the ion implanter, the method includes:
the electric field is closed;
continuously introducing a second treatment gas for 1-2 min;
and extracting the gas and impurities from the ion implanter.
Optionally, the second process gas comprises: at least one of argon, a boron-containing gas, and a germanium-containing gas.
The technical scheme of the invention at least comprises the following advantages: according to the ion source species in the previous ion implantation process, introducing first processing gas into an ion implanter, ionizing the first processing gas to form first processing ion beams, mainly cleaning deposits on the inner wall of a reaction chamber, and still having deposits with different degrees on a pipeline, so that an electric field is applied to the second-stage cleaning treatment after the first-stage cleaning treatment, introducing second processing gas into the ion implanter according to the ion source species to be converted, ionizing the second processing gas to form second processing ion beams, irradiating the reaction chamber and the pipeline of the ion implanter by the second processing ion beams, and performing the second-stage cleaning treatment on the reaction chamber and the pipeline of the ion implanter to achieve the purpose of ion cleaning, thereby further cleaning the deposits on the reaction chamber and the pipeline and avoiding the deposits on the pipeline from remaining. After the previous ion implantation process is performed and before the next ion implantation process to be converted, the cleaning gas and the ions in the ion beam are remained in the ion implanter after the cleaning process, and the remained processing gas and the ions may affect the next ion implantation process to be converted, so that the second stage of cleaning process can introduce the second processing gas into the ion implanter according to the type of the ion source to be converted, and accelerate the discharge of the first processing gas and the discharge of the first type of processing ions while cleaning the reaction chamber and the pipeline of the ion implanter, thereby providing the environment required by the ion implantation process to be converted.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a flow chart of the present invention in embodiment 1;
FIG. 3 is a flow chart of the practice 2 of the present invention;
fig. 4 is a flowchart of embodiment 3 of the present invention.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art based on the embodiments of the present invention without any creative effort, fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be connected through the inside of the two elements, or may be connected wirelessly or through a wire. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention provides a cleaning method of an ion implanter, which comprises the following steps in sequence:
s1: determining the ion source species in the preceding ion implantation process;
s2: determining ion source species to be converted during ion implantation
S3: applying an electric field, and introducing a first treatment gas into the ion implanter according to the ion source species in the previous ion implantation process so as to ionize the first treatment gas to form a first treatment ion beam;
s4: enabling the first processing ion beam to carry out first-stage cleaning processing on a reaction chamber of the ion implanter;
s5: introducing a second treatment gas into the ion implanter according to the species of the ion source to be converted so as to ionize the second treatment gas to form a second treatment ion beam;
s6: so that the second processing ion beam irradiates the reaction chamber and the pipeline of the ion implanter and carries out the second stage cleaning treatment on the reaction chamber and the pipeline of the ion implanter.
In the invention, after the previous ion implantation process is carried out, deposits are adhered in the ion source reaction chamber and the pipeline of the ion implanter, and the deposits comprise the ion source used in the previous ion implantation process, so that the ion source species in the previous ion implantation process needs to be determined firstly, and the subsequent cleaning treatment can be carried out in a targeted manner.
According to the ion source type in the previous ion implantation process, first processing gas is introduced into the ion implanter and ionized to form first processing ion beams, the deposits on the inner wall of the reaction chamber can be mainly cleaned, and deposits with different degrees still exist on the pipeline, so that an electric field is applied to the second-stage cleaning treatment after the first-stage cleaning treatment, and according to the ion source type to be converted, second processing gas is introduced into the ion implanter and ionized to form second processing ion beams, so that the second processing ion beams irradiate the reaction chamber and the pipeline of the ion implanter, and the reaction chamber and the pipeline of the ion implanter are subjected to the second-stage cleaning treatment, thereby realizing the purpose of ion cleaning, further cleaning the deposits on the reaction chamber and the pipeline, and avoiding the deposits on the pipeline from remaining.
After the previous ion implantation process is performed and before the next ion implantation process to be converted, the cleaning gas and the ions in the ion beam are remained in the ion implanter after the cleaning process, and the remained processing gas and the ions may affect the next ion implantation process to be converted, so that the second stage of cleaning process can introduce the second processing gas into the ion implanter according to the type of the ion source to be converted, and accelerate the discharge of the first processing gas and the discharge of the first type of processing ions while cleaning the reaction chamber and the pipeline of the ion implanter, thereby providing the environment required by the ion implantation process to be converted.
In the present invention, the precursor ion source species include: arsine, boron trifluoride, phosphine, and germanium tetrafluoride. Ion source species to be converted, comprising: arsine, boron trifluoride, phosphine, and germanium tetrafluoride.
Example 1
This embodiment provides a cleaning method for an ion implanter, which is illustrated in FIG. 2, wherein the precursor ion source species is arsine and the ion source species to be converted is boron trifluoride.
S11: the ion implanter determines the prior ion source type in the ion implantation process to be arsine (AsH 3);
s12: the ion implanter determines the ion source species to be converted in the ion implantation process as boron trifluoride (BF 3);
s13: applying an electric field with the voltage range of 10-12 KV, introducing argon as a first treatment gas into the ion implanter according to the type of the previous ion source, wherein the argon is an inert gas and is not easy to react with other objects, so that argon is adopted to ionize argon ions under the action of the electric field;
s14: and carrying out ion acceleration on the formed argon ions to form an argon ion beam with the energy of 60keV, wherein the argon ion beam with the energy can impact the surface of the reaction chamber in the moving process to carry out first-stage cleaning treatment, and the time of the first-stage cleaning treatment lasts for 10min to achieve the effect of cleaning the reaction chamber of the ion implanter.
S15: according to the fact that the type of the ion source to be converted is boron trifluoride, introducing boron-containing gas, such as boron difluoride, into the ion implanter, and ionizing the boron-containing gas to form ions under the action of an electric field;
s16: ionizing the boron-containing gas to form ion acceleration and form a boron ion beam with the energy of 50 keV;
s17: a boron ion beam of 50keV energy is caused to irradiate the reaction chamber and the piping of the ion implanter, which is subjected to a second stage cleaning treatment for 2min.
The implantation process of the ion source to be converted is to implant boron into a wafer, and the boron-containing gas is used before the implantation process of the ion source to be converted, so that on one hand, a boron ion beam formed by the boron-containing gas can clean a reaction chamber and a pipeline; on the other hand, the boron-containing gas is introduced into the reaction chamber and the pipeline, and the argon introduced in the first-stage cleaning treatment process can be driven out, so that the working environment of the injection process of the ion source conversion is ensured, and residual argon ions are prevented from participating in the injection process of the ion source to be converted.
Example 2
This embodiment provides a cleaning method for an ion implanter, which is illustrated in FIG. 3, wherein the precursor ion source species is arsine and the ion source species to be converted is phosphine.
S21: the ion implanter determines the prior ion source type in the ion implantation process to be arsine (AsH 3);
s22: the ion implanter determines the ion source species to be converted in the ion implantation process to be phosphine (PH 3);
s23: applying an electric field with the voltage range of 10 KV-12 KV, introducing argon as a first processing gas into the ion implanter according to the type of the previous ion source, wherein the argon is an inert gas and is not easy to react with other objects, so that argon is adopted and can be ionized to obtain argon ions under the action of the electric field;
s24: and carrying out ion acceleration on the formed argon ions to form an argon ion beam with the energy of 70keV, wherein the argon ion beam with the energy can impact the surface of the reaction chamber in the moving process, and carrying out first-stage cleaning treatment, wherein the time of the first-stage cleaning treatment lasts for 3min, so that the effect of cleaning the reaction chamber of the ion implanter is achieved.
S25: introducing argon into an ion implanter according to the type of an ion source to be converted, and ionizing the argon to form ions under the action of an electric field;
s26: ionizing the argon gas to form ions, accelerating the ions and forming an argon ion beam with the energy of 45keV as a second processing ion beam;
s27: an argon ion beam having an energy of 45keV was irradiated to the reaction chamber and the piping of the ion implanter, and the reaction chamber and the piping of the ion implanter were subjected to a second stage cleaning treatment which lasted for 5min.
It can be seen from the present embodiment that the first process gas and the second process gas may be the same gas, and the specific gas species is selected according to the type of the preceding ion source and the type of the ion source to be converted.
Example 3
In this embodiment, referring to fig. 4, an example of the precursor ion source species being arsine and the ion source species to be converted being germanium tetrafluoride is provided.
S31: the ion implanter determines the prior ion source type in the ion implantation process to be arsine (AsH 3);
s32: determining the ion source species to be converted in the ion implantation process to be germanium tetrafluoride (GeF 4) by the ion implanter;
s33: applying an electric field with the voltage range of 10 KV-12 KV, introducing argon as a first processing gas into the ion implanter according to the type of the previous ion source, wherein the argon is an inert gas and is not easy to react with other objects, so that argon is adopted and can be ionized to obtain argon ions under the action of the electric field;
s34: and carrying out ion acceleration on the formed argon ions to form an argon ion beam with the energy of 80keV, wherein the argon ion beam with the energy can impact the surface of the reaction chamber in the moving process, and carrying out first-stage cleaning treatment, wherein the time of the first-stage cleaning treatment lasts for 5min, so that the effect of cleaning the reaction chamber of the ion implanter is achieved.
S35: according to the fact that the type of the ion source to be converted is germanium tetrafluoride, introducing germanium-containing gas into the ion implanter, and ionizing the germanium-containing gas to form ions under the action of an electric field;
s36: ionizing the germanium-containing gas to form ions, accelerating the ions to form a germanium ion beam with energy of 55keV as a second processing ion beam;
s37: and irradiating the reaction chamber and the pipeline of the ion implanter by using a germanium ion beam with energy of 55keV, and performing a second-stage cleaning treatment on the reaction chamber and the pipeline of the ion implanter, wherein the second-stage cleaning treatment lasts for 1min.
The implantation process of the ion source to be converted is to implant germanium ions into a wafer, and a germanium-containing gas is used before the implantation process of the ion source to be converted, so that on one hand, a germanium ion beam formed by the germanium-containing gas can clean a reaction chamber and a pipeline; on the other hand, the germanium-containing gas is introduced into the reaction chamber and the pipeline, and the argon introduced in the first-stage cleaning treatment process can be driven out, so that the working environment of the injection process of the ion source conversion is ensured, and residual argon ions are prevented from participating in the injection process of the ion source to be converted.
In order to ensure the working environment of the implantation process of the ion source to be converted and avoid the residual first processing gas or the ions in the first processing ion beam from participating in the implantation process of the ion source to be converted, the above embodiment further performs the following steps after the second-stage cleaning process is completed:
the electric field is closed;
continuously introducing a second treatment gas for 1-2 min;
and extracting the gas and impurities from the ion implanter.
By continuously introducing the second treatment gas after the electric field is closed, residues in the first-stage cleaning treatment process can be further driven out, and the environment of the injection process of the ion source to be converted is ensured.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A method of cleaning an ion implanter, comprising the steps of:
determining the species of a previous ion source and the species of an ion source to be converted in the ion implantation process;
applying an electric field, and introducing a first processing gas into an ion implanter according to the species of the previous ion source so as to ionize the first processing gas to form a first processing ion beam;
causing the first processing ion beam to perform a first stage cleaning process on a reaction chamber of the ion implanter;
introducing a second treatment gas into the ion implanter according to the species of the ion source to be converted, so that the second treatment gas is ionized to form a second treatment ion beam; the second processing gas provides an environment required by an ion implantation process to be converted based on the ion source species to be converted;
and irradiating the reaction chamber and the pipeline of the ion implanter by the second processing ion beam, and performing second-stage cleaning treatment on the reaction chamber and the pipeline of the ion implanter.
2. The method of claim 1, wherein the preceding ion source species comprises: arsine, boron trifluoride, phosphine, and germanium tetrafluoride.
3. The method of claim 1, wherein the ion source species to be converted comprises: arsine, boron trifluoride, phosphine, and germanium tetrafluoride.
4. The method of claim 1, wherein the first process gas is argon.
5. The method of claim 1, wherein said applying an electric field to introduce a first process gas into the ion implanter according to the preceding ion source species to ionize the first process gas to form a first process ion beam comprises:
applying an electric field;
introducing a first treatment gas into the ion implanter according to the type of the ion source before the ion implanter;
the applied electric field causes the first process gas to ionize to form ions;
and accelerating ions formed by ionizing the first processing gas to form a first processing ion beam with the energy range of 60 keV-80 keV.
6. The method of any of claims 1-5, wherein the first stage cleaning process is performed for a period of time ranging from 3min to 20min.
7. The method of claim 1, wherein passing a second process gas into the ion implanter according to the species of the ion source to be converted such that the second process gas is ionized to form a second process ion beam comprises:
introducing a second treatment gas into the ion implanter according to the species of the ion source to be converted;
the applied electric field causes the second process gas to ionize to form ions;
and accelerating ions formed by ionizing the second processing gas to form a second processing ion beam with the energy ranging from 45keV to 55 keV.
8. The method according to any one of claims 1 to 5, wherein the second stage cleaning process is performed for a period of time of 1 to 5min.
9. The method of claim 1, wherein said causing the second processing ion beam to irradiate the reaction chamber and the circuitry of the ion implanter and performing a second stage cleaning process on the reaction chamber and the circuitry of the ion implanter comprises:
the electric field is closed;
continuously introducing a second treatment gas for 1-2 min;
and extracting the gas and impurities from the ion implanter.
10. The method of claim 1, wherein the second process gas comprises: at least one of argon, a boron-containing gas, and a germanium-containing gas.
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| CN101981661A (en) * | 2008-02-11 | 2011-02-23 | 高级技术材料公司 | Ion source cleaning in semiconductor processing systems |
| CN104064426A (en) * | 2013-03-19 | 2014-09-24 | 斯伊恩股份有限公司 | Ion Implantation Apparatus And Method Of Cleaning Ion Implantation Apparatus |
| CN104465292A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
| CN105097460A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for solving problem of path pollution of ion implanter |
| CN106929814A (en) * | 2017-02-24 | 2017-07-07 | 信利（惠州）智能显示有限公司 | A kind of cleaning method of ion implantation device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101981661A (en) * | 2008-02-11 | 2011-02-23 | 高级技术材料公司 | Ion source cleaning in semiconductor processing systems |
| CN104064426A (en) * | 2013-03-19 | 2014-09-24 | 斯伊恩股份有限公司 | Ion Implantation Apparatus And Method Of Cleaning Ion Implantation Apparatus |
| CN105097460A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for solving problem of path pollution of ion implanter |
| CN104465292A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
| CN106929814A (en) * | 2017-02-24 | 2017-07-07 | 信利（惠州）智能显示有限公司 | A kind of cleaning method of ion implantation device |
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