CN111074225A - Microwave plasma-assisted sputtering optical film forming method - Google Patents
Microwave plasma-assisted sputtering optical film forming method Download PDFInfo
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- CN111074225A CN111074225A CN202010021521.0A CN202010021521A CN111074225A CN 111074225 A CN111074225 A CN 111074225A CN 202010021521 A CN202010021521 A CN 202010021521A CN 111074225 A CN111074225 A CN 111074225A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 17
- 239000012788 optical film Substances 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 239000007787 solid Substances 0.000 claims abstract description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000009977 dual effect Effects 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims 1
- 230000013011 mating Effects 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- DEIVNMVWRDMSMJ-UHFFFAOYSA-N hydrogen peroxide;oxotitanium Chemical compound OO.[Ti]=O DEIVNMVWRDMSMJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of sputtering film formation, in particular to a microwave plasma-assisted sputtering optical film formation method. The invention preferably uses a solid state microwave source with an industrial microwave frequency of 2450MHz, which has the following advantages over the way of using RF to excite plasma: the use frequency is greatly improved, the RF frequency is 13.56M Hz, and the microwave frequency is 2450M Hz, so that the activation efficiency of oxygen in the vacuum chamber is greatly improved; a high-power radio frequency power supply or a plurality of radio frequency oxidation sources are not needed, so that the equipment cost is greatly reduced; the stability of the refractive index of the film layer is greatly improved, and the quality and the yield of the coated product are improved; by adopting the design of the rectangular resonant cavity, the number of modes of the microwave resonant cavity in the resonant cavity is maximized, and the uniformity of a microwave field is improved.
Description
Technical Field
The invention relates to the technical field of sputtering film formation, in particular to a microwave plasma-assisted sputtering optical film formation method.
Background
Optical coating refers to a process of coating one (or more) layers of metal (or medium) films on the surface of an optical part. The purpose of coating the surface of the optical part is to meet the requirements of reducing or increasing the reflection, beam splitting, color separation, light filtering, polarization and the like of light. The definition of the optical film is: in the process of a propagation path, a thin and uniform dielectric film layer attached to the surface of an optical device passes through the reflection, transmission (refraction), polarization and other characteristics of the layered dielectric film layer, so as to achieve light of each special form such as total transmission of light in a certain or multiple wavelength bands, total reflection of light, polarization separation and the like. As for the method of producing the film, there are generally electron beam coating machines, PECVD, magnetron sputtering and the like.
Wherein, the magnetron sputtering coating has the following advantages compared with the electron beam coating machine which is commonly used in the prior art, namely evaporation coating: the core of the film forming mechanism of the electron beam evaporator is that the film molecules are heated by electron beams to evaporate and transport the film in a crucible trough to the surface of a workpiece, and in the evaporation and transport process, the film molecules only obtain 0.2 to 0.3ev of energy. Such low energy is not enough to make the film material molecules deposited on the surface of the workpiece fully and effectively migrate, resulting in large porosity of the film layer, unstable refractive index, incompact film layer, and poor strength and corrosion resistance.
Therefore, in order to achieve high quality film formation, high-end electron beam evaporation coating usually requires an RF ion source or a high-power plasma source for auxiliary deposition, and the substrate is heated to 200 to 300 ℃. However, these two methods are not suitable for all types of film-coated products, such as large-area low-temperature film-forming production processes for mobile phone products.
In addition, the refractive index of the film layer of the evaporation coating machine is unstable, which can cause the unstable quality of the product.
For the existing magnetron sputtering technology, because the optical film materials are generally oxides which are generally non-conductors, the sputtered oxides can only be sputtered by radio frequency, but the radio frequency sputtering has the defects of expensive power supply, low sputtering rate and low film forming efficiency; in addition, sputtering is likely to be stopped due to target poisoning caused by direct current reactive sputtering.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provides a microwave plasma-assisted sputtering optical film forming method, which does not need to use a high-power radio frequency power supply and greatly improves the efficiency of activating oxygen in a vacuum chamber.
In order to achieve the purpose, a microwave plasma-assisted sputtering optical film forming method is designed, and in the sputtering process, a solid microwave source excites plasma to realize film oxidation so as to improve the stability of the refractive index of a film.
Preferably, the frequency of the solid state microwave source used is 2450 MHz.
Preferably, the solid-state microwave source adopts a directional coupler waveguide with a rectangular resonant cavity, so that the mode number of the microwave resonant cavity in the resonant cavity is increased, and the uniformity of a microwave field is improved.
Preferably, the magnetron sputtering coating is carried out by using double magnetron sputtering targets.
Preferably, the material of the magnetron sputtering target comprises silicon, niobium, tantalum, titanium and zirconium.
Preferably, the method is as follows: oxygen is introduced into an oxidation area on one side of a vacuum cavity for magnetron sputtering to oxidize the plating metal into oxide, and energy is input for oxygen molecules through the solid microwave source to generate active plasma so as to improve the efficiency of combining with the metal, wherein the plating metal is a conductor and is non-oxide.
Preferably, the solid-state microwave source is provided with a tuner and a directional coupler waveguide which are connected, and a resonant cavity of the directional coupler waveguide adopts a rectangular resonant cavity.
Preferably, an adapting end part is further connected to one end of the directional coupler waveguide far away from the tuner.
The invention preferably uses a solid state microwave source with an industrial microwave frequency of 2450MHz, which has the following advantages over the way of using RF to excite plasma:
(1) the use frequency is greatly improved, the RF frequency is 13.56M Hz, and the microwave frequency is 2450M Hz, so that the activation efficiency of oxygen in the vacuum chamber is greatly improved;
(2) a high-power radio frequency power supply or a plurality of radio frequency oxidation sources are not needed, so that the equipment cost is greatly reduced;
(3) the stability of the refractive index of the film layer is greatly improved, and the quality and the yield of the coated product are improved;
(4) by adopting the design of the rectangular resonant cavity, the number of modes of the microwave resonant cavity in the resonant cavity is maximized, and the uniformity of a microwave field is improved.
Drawings
FIG. 1 is a schematic diagram of a process for oxidation of a film layer by microwave-excited plasma in accordance with the present invention;
FIG. 2 is a schematic diagram of a solid state microwave source according to the present invention;
FIG. 3 is a schematic diagram of a tuner of the present invention;
FIG. 4 is a schematic diagram of a directional coupler waveguide according to the present invention;
FIG. 5 is a schematic diagram of the solid state microwave source, tuner and directional coupler waveguide connection of the present invention;
FIG. 6 is a schematic view of the structure of the adapter end of the present invention;
FIG. 7 is a front view of the adaptor end of the present invention;
in the figure: 1. a workpiece (substrate) to be plated 2, an oxygen particle activation region 3, and a microwave introduction position.
Detailed Description
The construction and principles of such a device will be apparent to those skilled in the art from the following further description of the invention taken in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In this embodiment, dual magnetron sputtering targets are used for magnetron sputtering coating, and a first magnetron sputtering target a and a second magnetron sputtering target B sputter a coating material onto the substrate, where the coating material, i.e. the coating metal, is an electrical conductor and is a non-oxide material, such as a commonly used optical thin film material: silicon, niobium, tantalum, titanium, zirconium, and the like. In the sputtering process, plasma is excited by a solid microwave source to realize film oxidation, namely, an oxide film is formed through oxidation so as to improve the stability of the refractive index of the film.
Since the film to be formed is an oxide such as silicon dioxide, niobium oxide, tantalum pentoxide, titanium trioxide, zirconium oxide, etc., oxygen is introduced into the oxidation region on the side of the vacuum chamber to oxidize the plating metal into an oxide. However, since covalent bonds between oxygen molecules are not opened, the oxygen molecules do not have the activity of bonding with metals, and if only the oxygen introduction method is adopted, the oxygen hardly reacts with the plating metal to generate oxides, and the oxidation rate is extremely low. Therefore, it is necessary to input energy to the oxygen molecules to make them into more active plasma, thereby improving the efficiency of bonding with the metal.
In order to input energy to oxygen molecules, a mode of introducing RF radio frequency can be adopted, but the efficiency of ionizing oxygen by RF radio frequency is often insufficient, which causes that the film material is not completely oxidized, the refractive index of the film is reduced, and the product stability is poor. Therefore, to increase the oxidation efficiency, only the RF power can be increased, even multiple sets of RF devices are used to excite the oxidation, which greatly increases the equipment cost.
Therefore, the present embodiment innovatively adopts a microwave-excited plasma mode to perform the film oxidation process, the simplified diagram of which is shown in fig. 1, and preferably, the present embodiment adopts a solid-state microwave source with an industrial microwave frequency of 2450MHz, and compared with the RF radio-frequency-excited plasma mode, the frequency of the solid-state microwave source is greatly increased, the RF radio-frequency is 13.56MHz, and the microwave frequency of the solid-state microwave source is 2450MHz, which is much higher than the RF radio-frequency, so that the efficiency of oxygen activation in the vacuum chamber is greatly increased. Therefore, a high-power radio frequency power supply and a plurality of radio frequency oxidation sources are not needed in the magnetron sputtering process, the equipment cost is greatly reduced, the oxidation area is constructed into an oxygen-like particle activation area through the arrangement of the solid microwave source, the better oxidation effect is realized, the stability of the refractive index of the film layer is greatly improved, and the quality and the yield of the coated product are also greatly improved.
Furthermore, referring to fig. 2 to 5, preferably, the solid-state microwave source is provided with a tuner and a directional coupler waveguide which are sequentially connected, and with reference to fig. 6 and 7, the outer end of the directional coupler waveguide can be further connected with an adaptive end portion through a bolt, the adaptive end portion is used for realizing connection, and the resonant cavity of the directional coupler waveguide is designed to be a rectangular resonant cavity, so that the number of microwave resonant modes in the resonant cavity can be maximized, and the uniformity of a microwave field is improved.
Claims (8)
1. A sputtering optical film-forming method assisted by microwave plasma is characterized in that in the sputtering process, plasma is excited by a solid microwave source to realize film oxidation so as to improve the stability of the refractive index of the film.
2. A microwave plasma assisted sputter optical film forming process as claimed in claim 1 wherein the frequency of the solid state microwave source employed is 2450 MHz.
3. The microwave plasma assisted sputtering optical film forming method according to claim 1, wherein the solid state microwave source employs a directional coupler waveguide having a rectangular cavity, thereby increasing the number of microwave cavity modes in the cavity and increasing the uniformity of the microwave field.
4. A microwave plasma assisted sputter optical film forming method as recited in claim 1 in which magnetron sputter coating is performed using dual magnetron sputtering targets.
5. A microwave plasma assisted sputter optical film forming method as recited in claim 1 in which the magnetron sputtering target material comprises silicon, niobium, tantalum, titanium, zirconium.
6. A microwave plasma assisted sputter optical film forming method as defined in claim 1, characterized in that said method is as follows: oxygen is introduced into an oxidation area on one side of a vacuum cavity for magnetron sputtering to oxidize the plating metal into oxide, and energy is input for oxygen molecules through the solid microwave source to generate active plasma so as to improve the efficiency of combining with the metal, wherein the plating metal is a conductor and is non-oxide.
7. A microwave plasma assisted sputter optical film deposition process as defined in claim 1 wherein said solid state microwave source is provided with a tuner and a directional coupler waveguide connected, the resonant cavity of said directional coupler waveguide being a rectangular resonant cavity.
8. A microwave plasma assisted sputter optical film deposition method as recited in claim 7 in which the end of the directional coupler waveguide remote from the tuner is further connected to a mating end.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114561617A (en) * | 2022-03-03 | 2022-05-31 | 季华实验室 | Preparation method of metal oxide film and metal oxide film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050011757A1 (en) * | 2003-07-16 | 2005-01-20 | Toshinari Noda | Sputtering apparatus |
| CN1842612A (en) * | 2004-03-15 | 2006-10-04 | 株式会社爱发科 | Film-forming apparatus and firm-forming method thereof |
| CN107841712A (en) * | 2017-11-01 | 2018-03-27 | 浙江水晶光电科技股份有限公司 | Preparation method, high index of refraction hydrogenated silicon film by utilizing, optical filtering lamination and the optical filter of high index of refraction hydrogenated silicon film by utilizing |
| CN212051629U (en) * | 2020-01-09 | 2020-12-01 | 上海嘉森真空科技有限公司 | Microwave plasma sputtering optical coating machine |
-
2020
- 2020-01-09 CN CN202010021521.0A patent/CN111074225A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050011757A1 (en) * | 2003-07-16 | 2005-01-20 | Toshinari Noda | Sputtering apparatus |
| CN1842612A (en) * | 2004-03-15 | 2006-10-04 | 株式会社爱发科 | Film-forming apparatus and firm-forming method thereof |
| CN107841712A (en) * | 2017-11-01 | 2018-03-27 | 浙江水晶光电科技股份有限公司 | Preparation method, high index of refraction hydrogenated silicon film by utilizing, optical filtering lamination and the optical filter of high index of refraction hydrogenated silicon film by utilizing |
| CN212051629U (en) * | 2020-01-09 | 2020-12-01 | 上海嘉森真空科技有限公司 | Microwave plasma sputtering optical coating machine |
Non-Patent Citations (4)
| Title |
|---|
| (英)克拉克(CLARK，P.T.)，(英)费斯特(FEAST，V.T.)编著；张开译: "聚合物表面", 31 May 1985, 北京：化学工业出版社, pages: 361 * |
| 周其凤，胡汉杰主编: "高分子化学", 31 October 2001, 北京：化学工业出版社, pages: 58 * |
| 甄汉生著: "等离子体加工技术", 31 October 1990, 北京：清华大学出版社, pages: 109 - 110 * |
| 葛袁静，张广秋，陈强编著: "等离子体科学技术及其在工业中的应用", 31 January 2011, 北京：中国轻工业出版社, pages: 79 - 80 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114561617A (en) * | 2022-03-03 | 2022-05-31 | 季华实验室 | Preparation method of metal oxide film and metal oxide film |
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