CN111065254B - Low-loss differential electrode with three-dimensional shielding layer - Google Patents
Low-loss differential electrode with three-dimensional shielding layer Download PDFInfo
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- CN111065254B CN111065254B CN201911377153.7A CN201911377153A CN111065254B CN 111065254 B CN111065254 B CN 111065254B CN 201911377153 A CN201911377153 A CN 201911377153A CN 111065254 B CN111065254 B CN 111065254B
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Abstract
The invention discloses a low-loss differential electrode with a three-dimensional shielding layer, which relates to the field of optical communication devices and comprises a traveling wave electrode and a shielding structure, wherein the traveling wave electrode is driven in a single-ended driving mode or a differential driving mode; the shielding structure includes two side metal shield layers and locates the top surface metal shield layer on travelling wave electrode top, two side metal shield layers are located respectively travelling wave electrode both sides, just top surface metal shield layer one end links to each other with a side metal shield layer's top, and the other end links to each other with the top of another side metal shield layer, the travelling wave electrode is located between two side metal shield layers, and with two side metal shield layers between there be the interval. The invention has the advantages of simple structure, easy realization, low cost, anti-interference, anti-crosstalk, strong heat dissipation capability and the like, can effectively realize the shielding and anti-interference of electrode signals, and is compatible with the prior art.
Description
Technical Field
The invention relates to the field of optical communication devices, in particular to a low-loss differential electrode with a three-dimensional shielding layer.
Background
In the transmission scenario of the electro-optical modulator and the microwave radio frequency signal, it is necessary to ensure that the signal transmission line (i.e., the electrode) has strong robustness, i.e., is not interfered by the outside world. Currently, a commonly used SS (signal) two-conductor differential electrode and GS (ground signal) single-end electrode have the problem that the electrode structure is easily interfered by an external structure and an adjacent channel to generate crosstalk, resonance and the like to influence the signal quality because of the problem that no metal ground is partially isolated and shielded.
The mainstream processing scheme at present is that structures which can cause signal interference, such as metal wires, electrodes and the like, are not adopted on two sides of the electrodes as much as possible; another processing scheme is to ensure that the distance between the signal electrodes is as large as possible in the presence of multiple signals, so as to ensure that crosstalk between two signal electrodes is not generated. However, in order to satisfy the above two schemes, the layout and design of the chip are satisfied, which may be greatly limited, and some structures for ensuring reliability may not be processed around the electrode, which brings great hidden danger to flexibility in chip design and reliability in later use, and greatly limits application scenarios of the electrode.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the low-loss differential electrode with the three-dimensional shielding layer, which has the advantages of simple structure, easiness in realization, low cost, interference resistance, crosstalk resistance, strong heat dissipation capability and the like, can effectively realize the shielding and interference resistance of an electrode signal, and is compatible with the prior art.
In order to achieve the above purposes, the technical scheme adopted by the invention is as follows:
the traveling wave electrode is driven in a single-ended driving mode or a differential driving mode;
shielding structure, shielding structure includes two side metal shield layers and locates the top surface metal shield layer on travelling wave electrode top, two side metal shield layers are located respectively travelling wave electrode both sides, just top surface metal shield layer one end links to each other with a side metal shield layer's top, and the other end links to each other with the top of another side metal shield layer, travelling wave electrode is located between two side metal shield layers, and with two side metal shield layers between there is the interval.
On the basis of the technical scheme, the two side metal shielding layers are arranged in parallel, and the side metal shielding layers are parallel to the length direction of the traveling wave electrode.
On the basis of the technical scheme, the plane of the side metal shielding layer is vertical to the plane of the traveling wave electrode, and the plane of the side metal shielding layer is vertical to the plane of the top metal shielding layer.
On the basis of the technical scheme, the side metal shielding layer is a metal sheet.
On the basis of the technical scheme, the side metal shielding layer is composed of a plurality of metal columns which are arranged at intervals, and the metal columns are vertical to the plane of the traveling wave electrode.
On the basis of the technical scheme, the top metal shielding layer is a metal sheet.
On the basis of the technical scheme, the top metal shielding layer is a metal sheet with a grid structure on the surface.
On the basis of the technical scheme, when the driving form of the traveling wave electrode is a single-end driving form, the distance between the side metal shielding layer and the traveling wave electrode and the distance between the top metal shielding layer and the traveling wave electrode meet the requirement that the electrode impedance is 50 ohms.
On the basis of the technical scheme, when the driving form of the traveling wave electrode is a differential driving form, the distance between the side metal shielding layer and the traveling wave electrode and the distance between the top metal shielding layer and the traveling wave electrode both meet the requirement that the electrode impedance is 100 ohms.
On the basis of the technical scheme, the traveling wave electrode comprises two electrodes, and an active modulation area is arranged between the two electrodes.
Compared with the prior art, the invention has the advantages that: the shielding structure is not only suitable for a silicon optical modulator chip system, but also can be applied to other circuit board wiring and a system needing the electrode structure, and has strong applicability.
Drawings
FIG. 1 is a front view of a low-loss differential electrode with a three-dimensional shielding layer in an embodiment of the present invention;
FIG. 2 is a top view of a conventional differential electrode;
FIG. 3 is a left side view of a structure of a conventional differential electrode;
fig. 4 is a front view of a structure of a conventional differential electrode.
Detailed Description
According to the low-loss differential electrode with the three-dimensional shielding layer, the three-dimensional metal structure is added around the electrode, so that the electrode has higher robustness, and meanwhile, the low-loss differential electrode has the advantages of being anti-interference, anti-crosstalk, strong in heat dissipation capability and the like, and is wide in application range. The present invention will be described in further detail with reference to the accompanying drawings and examples.
Referring to fig. 1, a low-loss differential electrode with a three-dimensional shielding layer according to an embodiment of the present invention includes a traveling wave electrode and a shielding structure. The driving form of the traveling wave electrode is a single-end driving form or a differential driving form. The shielding structure comprises two side metal shielding layers and a top metal shielding layer arranged on the top end of the traveling wave electrode, the two side metal shielding layers are respectively positioned on two sides of the traveling wave electrode, one end of the top metal shielding layer is connected with the top end of one side metal shielding layer, the other end of the top metal shielding layer is connected with the top end of the other side metal shielding layer, the traveling wave electrode is positioned between the two side metal shielding layers, and a gap exists between the traveling wave electrode and the two side metal shielding layers. The top metal shield layer may be connected to an external ground for use as a reference ground. The shielding structure realizes the shielding effect of electromagnetic signals, the side metal shielding layer and the top metal shielding layer are electrically communicated to form an integral structure, and equipotential is realized, so that an integral metal shielding structure is formed.
In one embodiment, the traveling wave electrode comprises two electrodes, and an active modulation region is disposed between the two electrodes.
For the shielding structure in the embodiment of the present invention, specifically, the two side metal shielding layers are arranged in parallel, and the side metal shielding layers are parallel to the length direction of the traveling wave electrode; the plane of the side metal shielding layer is vertical to the plane of the traveling wave electrode, and the plane of the side metal shielding layer is vertical to the plane of the top metal shielding layer.
The conventional differential electrode is generally composed of a section of metal microwave signal waveguide, as an example, a top view, a left side view and a front view of the differential radio-frequency electrode are respectively shown in fig. 2, fig. 3 and fig. 4, and in some cases, the differential radio-frequency electrode may also be some non-metallic conductor material. In practical application, the structure of the metal waveguide may also be in a single-ended form, such as a GSG, GS or SG waveguide, or in a differential form, such as a SS, GSGSG, etc., and all electrode structures may also be in some variant structures, such as a SS electrode, on which a track portion may be added to form a differential electrode with a track, and a single-ended electrode, on which various derivative structures may also be added, but no matter which waveguide form, the shielding structure scheme of the present invention may be applied to perform three-dimensional electromagnetic signal shielding, and provide a reference ground metal.
For the shielding structure in the present invention, if the shielding structure is applied to an electro-optical modulator electrode, a side metal shielding layer and a top metal shielding layer may be formed by the via hole and the lower metal structure.
For the side metal shielding layer, the metal sheet or the metal columns are arranged at intervals, when the metal columns are arranged, the metal columns are vertical to the plane where the traveling wave electrode is located, and meanwhile, the period interval between the metal columns requires that the period of the columns is less than half of the working wavelength of the signals to be shielded according to the electromagnetic shielding theory. For the top metal shielding layer, the top metal shielding layer is a metal sheet or a metal sheet with a grid structure on the surface, and when the top metal shielding layer is a metal sheet with a grid structure on the surface, the period of the grid needs to meet the requirement that the period is less than half of the working waveguide of the shielding signal.
The distance between the side metal shielding layer and the traveling wave electrode and the distance between the top metal shielding layer and the traveling wave electrode are selected according to the electromagnetic parameter matching such as impedance. Specifically, when the driving form of the traveling wave electrode is a single-ended driving form, the distance between the side metal shielding layer and the traveling wave electrode and the distance between the top metal shielding layer and the traveling wave electrode both satisfy that the electrode impedance is 50 ohms; when the driving form of the traveling wave electrode is a differential driving form, the distance between the side metal shielding layer and the traveling wave electrode and the distance between the top metal shielding layer and the traveling wave electrode both satisfy that the electrode impedance is 100 ohms. In some special applications, such as electro-optic modulators, the traveling wave electrode also needs to satisfy the condition that the refractive index of the electrode group is consistent with that of the waveguide group.
Due to the addition of the metal shielding part, the microwave signal mode field of the electrode is not influenced and lost by surrounding media, so that the loss of the electrode can be reduced, and the bandwidth of an electrode system can be further improved; because the three-dimensional shielding metal part is added, the heat dissipation capability of the device adopting the electrode system structure is greatly improved, for example, the heat dissipation of the load and the thermal phase position part of the modulator is greatly improved, and the reliability of the device can be further improved; the influence of the surrounding metal structure and the conducting wire on the electrode part can be eliminated due to the protection of the surrounding three-dimensional shielding structure, so that the metal structure and the wiring can be added at will at the position where the traditional structure can not have the structural layout of metal and the like, the flexibility of the chip design is greatly improved, and in addition, due to the shielding structure, under the condition of multipath parallel, the crosstalk among a plurality of paths of electrodes can be inhibited, so the integration density of the chip can be greatly improved; due to the addition of the metal shielding plane metal layer on the upper layer, the electrode is not interfered by the structure above the shielding metal layer, so that the possibility of three-dimensional integration is provided, and other types of chips, devices and various metal and non-metal materials can be randomly stacked above the plane of the electrode shielding layer, for example, for the electrode structure of the electro-optical modulator, various electric driving chips can be three-dimensionally integrated above the electrode structure. This structure can be applied not only to the modulator electrode but also to electrodes such as a detector, as long as the electrode structure is applicable.
The low-loss differential electrode with the three-dimensional shielding layer has the advantages of simple structure, easiness in realization, low cost, interference resistance, crosstalk resistance, high heat dissipation capability and the like by adding the three-dimensional metal structure around the electrode, can effectively realize the shielding and interference resistance of an electrode signal, is compatible with the prior art, is not only suitable for a silicon optical modulator chip system, but also can be applied to other circuit board wiring and systems needing the electrode structure, and has high applicability.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Those not described in detail in this specification are within the skill of the art.
Claims (4)
1. A low-loss differential electrode with a three-dimensional shielding layer, comprising:
the traveling wave electrode is driven in a single-ended driving mode or a differential driving mode;
the shielding structure comprises two side metal shielding layers and a top metal shielding layer arranged at the top end of the traveling wave electrode, the two side metal shielding layers are respectively positioned at two sides of the traveling wave electrode, one end of the top metal shielding layer is connected with the top end of one side metal shielding layer, the other end of the top metal shielding layer is connected with the top end of the other side metal shielding layer, the traveling wave electrode is positioned between the two side metal shielding layers, and a gap is formed between the traveling wave electrode and the two side metal shielding layers;
the side metal shielding layer is composed of a plurality of metal columns which are arranged at intervals, the metal columns are perpendicular to the plane of the traveling wave electrode, and the top metal shielding layer is a metal sheet with a grid structure on the surface;
the side metal shielding layer is parallel to the length direction of the traveling wave electrode, when the driving form of the traveling wave electrode is a single-ended driving form, the distance between the side metal shielding layer and the traveling wave electrode and the distance between the top metal shielding layer and the traveling wave electrode both satisfy that the electrode impedance is 50 ohms, and when the driving form of the traveling wave electrode is a differential driving form, the distance between the side metal shielding layer and the traveling wave electrode and the distance between the top metal shielding layer and the traveling wave electrode both satisfy that the electrode impedance is 100 ohms.
2. The low-loss differential electrode with a three-dimensional shielding layer of claim 1, wherein: the two side metal shielding layers are arranged in parallel.
3. The low-loss differential electrode with a three-dimensional shielding layer of claim 2, wherein: the plane of the side metal shielding layer is vertical to the plane of the top metal shielding layer.
4. The low-loss differential electrode with a three-dimensional shielding layer of claim 1, wherein: the traveling wave electrode comprises two electrodes, and an active modulation area is arranged between the two electrodes.
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| CN201911377153.7A CN111065254B (en) | 2019-12-27 | 2019-12-27 | Low-loss differential electrode with three-dimensional shielding layer |
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| CN201911377153.7A CN111065254B (en) | 2019-12-27 | 2019-12-27 | Low-loss differential electrode with three-dimensional shielding layer |
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| CN111065254A CN111065254A (en) | 2020-04-24 |
| CN111065254B true CN111065254B (en) | 2022-02-15 |
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| CN112600623B (en) * | 2020-12-09 | 2022-04-05 | 武汉光谷信息光电子创新中心有限公司 | Differential drive modulator and control method thereof |
| CN112563346B (en) * | 2020-12-09 | 2022-09-09 | 武汉光谷信息光电子创新中心有限公司 | Electrode structure |
Citations (6)
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| US5220627A (en) * | 1989-02-17 | 1993-06-15 | Nippon Telegraph And Telephone Corporation | Electrically controlled optical device |
| US6600843B2 (en) * | 2001-03-13 | 2003-07-29 | Srico, Inc. | Optical modulator |
| CN106092080A (en) * | 2016-08-26 | 2016-11-09 | 武汉光迅科技股份有限公司 | PLC chip and lithium niobate modulator hybrid integrated optics |
| CN108780236A (en) * | 2016-03-18 | 2018-11-09 | 日本电信电话株式会社 | Optical modulator |
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2019
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| US5220627A (en) * | 1989-02-17 | 1993-06-15 | Nippon Telegraph And Telephone Corporation | Electrically controlled optical device |
| JPH04288518A (en) * | 1991-03-18 | 1992-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulating element |
| US6600843B2 (en) * | 2001-03-13 | 2003-07-29 | Srico, Inc. | Optical modulator |
| CN108780236A (en) * | 2016-03-18 | 2018-11-09 | 日本电信电话株式会社 | Optical modulator |
| CN106092080A (en) * | 2016-08-26 | 2016-11-09 | 武汉光迅科技股份有限公司 | PLC chip and lithium niobate modulator hybrid integrated optics |
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Non-Patent Citations (1)
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