CN111063773B - Substrate, LED and manufacturing method thereof - Google Patents
Substrate, LED and manufacturing method thereof Download PDFInfo
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- CN111063773B CN111063773B CN201911286172.9A CN201911286172A CN111063773B CN 111063773 B CN111063773 B CN 111063773B CN 201911286172 A CN201911286172 A CN 201911286172A CN 111063773 B CN111063773 B CN 111063773B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The application discloses a substrate, LED and manufacturing method thereof, the substrate includes: a substrate main body, wherein a plurality of transfer support structures which are arranged at intervals and protrude from the main surface are integrally formed on one main surface of the substrate main body; and the transfer sacrificial layer is arranged on the main surface of the substrate body in a stacked mode, and the end, far away from the substrate body, of the transfer support structure is exposed, wherein the tolerance of the substrate body to a specific etching solution is larger than that of the transfer sacrificial layer. Through the mode, the substrate provided by the application can be used for etching the transfer sacrificial layer after the LED units are generated subsequently, and the LED units are supported in a suspended mode relative to the substrate main body by utilizing the transfer supporting structure, so that the adhesive force between the LED units and the substrate is reduced, and the separation and transfer difficulty is reduced. Furthermore, the arrangement density of the LED units on the substrate can be improved, the loss of the area of the LED chip is reduced, and the manufacturing cost of the LED is reduced.
Description
Technical Field
The present application relates to the field of light emitting diodes, and more particularly, to a substrate, an LED and a method of manufacturing the same.
Background
Light Emitting Diodes (LEDs) are solid state devices that convert electrical energy into light, and LEDs have the advantages of small size, high efficiency, long lifetime, and the like, and are widely used in the fields of traffic indication, outdoor full color display, and the like. In particular, the semiconductor solid-state lighting can be realized by using a high-power LED, which has caused a revolution in the human lighting history, and thus has gradually become a research hotspot in the field of electronics at present.
Currently, LEDs are generally formed on a substrate by epitaxial growth, and the chips need to be separated and transferred from the substrate in some specific applications, such as Micro LEDs applied in the field of display, and vertical structure LED chips applied in the fields of flashlights, and car lights. How to effectively achieve the separation between the LED and the substrate is a problem to be solved in the industry.
Disclosure of Invention
The application provides a substrate, an LED and a manufacturing method thereof, which can effectively reduce the adhesive force between the subsequently generated LED unit and the substrate and reduce the separation and transfer difficulty.
In order to solve the technical problem, the application adopts a technical scheme that: there is provided a substrate comprising: a substrate main body, wherein a plurality of transfer support structures which are arranged at intervals and protrude from the main surface are integrally formed on one main surface of the substrate main body; and the transfer sacrificial layer is arranged on the main surface of the substrate body in a stacked mode, and the end, far away from the substrate body, of the transfer support structure is exposed, wherein the tolerance of the substrate body to a specific etching solution is larger than that of the transfer sacrificial layer.
In order to solve the above technical problem, another technical solution adopted by the present application is: there is provided a method of manufacturing a substrate, the method comprising: providing a substrate main body, wherein a plurality of transfer support structures which are arranged at intervals are integrally formed on one main surface of the substrate main body; a transfer sacrificial layer is formed on a major surface of the substrate body, wherein the transfer sacrificial layer exposes an end of the transfer support structure distal from the substrate body, the substrate body being more resistant to a particular etching solution than the transfer sacrificial layer.
In order to solve the above technical problem, the present application adopts another technical solution: provided is a method for manufacturing an LED chip, the method including: providing a substrate as described above; forming a light-emitting epitaxial layer on one side of the transfer sacrificial layer far away from the substrate main body; patterning the light emitting epitaxial layer to form a plurality of LED units; the transfer sacrificial layer is etched such that the plurality of LED units are separated from the transfer sacrificial layer and are respectively supported by different transfer support structures.
In order to solve the above technical problem, the present application adopts another technical solution that: provided is an LED including: a substrate body and a plurality of transfer support structures integrally formed on one major surface of the substrate body; and a plurality of LED units supported by different transfer support structures, respectively, and spaced apart from the substrate main body.
The beneficial effect of this application is: different from the prior art, the transfer sacrificial layer is stacked on the main surface of the substrate main body, the main surface is further integrally formed with a plurality of transfer support structures which are arranged at intervals and protrude out of the main surface, the end portions, far away from the substrate main body, of the transfer support structures are exposed out of the transfer sacrificial layer, and the tolerance of the substrate main body to a specific etching solution is higher than that of the transfer sacrificial layer. After the LED unit is generated subsequently, the transfer sacrificial layer is etched through a specific etchant, and the substrate main body and the transfer support structure which are of an integral structure are reserved so as to support the LED unit in a suspension mode relative to the substrate main body through the transfer support structure, wherein the transfer support structure is used as a weakening structure in the subsequent process, and therefore the LED unit can be conveniently separated from the weakening structure under the action of relatively small external force. Meanwhile, the transfer support structure is directly supported between the LED units and the substrate main body, so that the arrangement density of the LED units on the substrate can be improved, the loss of the area of an LED chip is reduced, and the manufacturing cost of the LED is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
FIG. 1 is a schematic top view of a substrate according to a first embodiment of the present application;
FIG. 2 is a first cross-sectional view of section A-A of FIG. 1;
FIG. 3 is a second cross-sectional view of section A-A of FIG. 1;
FIG. 4 is a first schematic flow chart of a method of fabricating a substrate according to the present application;
FIG. 5 is a schematic diagram of a structure corresponding to various stages of the method of fabricating the substrate shown in FIG. 4;
FIG. 6 is a schematic flow chart of a method of fabricating an LED according to the present application;
FIG. 7 is a schematic flow chart of step S22 in FIG. 6;
FIG. 8 is a schematic flow chart of step S23 in FIG. 6;
FIG. 9 is a schematic flow chart of step S24 in FIG. 6;
FIG. 10 is a schematic view of a first structure corresponding to steps of a method of fabricating an LED according to the present application;
FIG. 11 is a second schematic diagram of a LED according to the present application at various steps of the method;
fig. 12 is a schematic view of the structure of the LED of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1-2, a substrate 100 according to a first embodiment of the present application includes: a substrate body 110, a transfer support structure 120, and a transfer sacrificial layer 130. The transfer support structure 120 is disposed on the main surface 111 of the substrate main body 110, the transfer support structure 120 and the substrate main body 110 are an integral structure, and the plurality of transfer support structures 120 are spaced apart from each other and protrude from the main surface 111.
Further, a transfer sacrificial layer 130 is disposed on the main surface 111 on one side of the substrate main body 110, a plurality of openings 131 are disposed on the transfer sacrificial layer 130 at intervals, and the plurality of openings 131 may be arranged regularly or irregularly. In the present embodiment, the plurality of openings 131 are arranged in a honeycomb shape on the main surface 111, that is, a certain opening 131 is selected as a reference, and the surrounding openings 131 are distributed at the vertex positions of a regular hexagon centered at the certain opening 131.
Further, the number of the transfer support structures 120 is equal to the number of the openings 131, and the transfer support structures 120 correspond to the openings 131 one to one. The transfer support structure 120 is disposed through the openings 131, and an end 121 of the transfer support structure 120 distal from the substrate body 110 is exposed through the plurality of openings 131.
The transfer support structure 120 serves as a weakening structure in a subsequent process, and after a corresponding LED unit is formed in a subsequent process, the transfer support structure 120 for supporting the LED unit may be exposed by removing a portion of the transfer sacrificial layer 130, so that the transfer support structure 120 suspends the LED unit with respect to the substrate main body 110, thereby reducing an adhesive force between the LED unit and the substrate 100. For example, an etching process may be performed on the transfer sacrificial layer 130 until a portion of the transfer support structure 120 is exposed. The etching process may also be performed by a dry etching process or a wet etching process.
Wherein the height D1 of the transfer support structure 120 is in the range of 0.1-10 microns and the cross-sectional dimension r1 of the transfer support structure 120 along the parallel direction D1 of the major surface 111 is in the range of 0.1-10 microns.
Further, materials different in resistance to a specific etchant may be selected as the substrate body 110 material, the transfer support structure 120 material, and the transfer sacrificial layer 130 material, and specifically, the substrate body 110 and the transfer support structure 120 of the integral structure have a resistance to a specific etchant larger than that of the transfer sacrificial layer 130. Accordingly, in a subsequent process, when the transfer sacrificial layer 130 is etched with a specific etchant, the substrate body 110 and the transfer support structure 120 for supporting the LED unit remain.
The material of the substrate body 110, the transfer support structure 120 mentioned above may include sapphire, and the material of the transfer sacrificial layer 130 may include SiO2SiN or Al2O3. Wherein, the specific etchant can be prepared by mixing hydrofluoric acid and ammonium fluoride according to a certain proportion, and the hydrofluoric acid has stronger corrosion effect on silicon-containing substances, so the specific etchant can effectively treat SiO2The sacrificial layer 130 is transferred to be etched.
In other embodiments, the material of the substrate body is GaAs, and the material of the transfer sacrificial layer is AlGaAs, InGaAs, or AlInGaAs; the specific etchant is organic acid or organic acid/H2O2Mixed solution, or NH4OH/H2O2Mixed solution, or H3PO4/H2O2The solution was mixed.
The transfer sacrificial layer 130 is a continuous structure, and thus, the transfer sacrificial layer 130 can be continuously etched using a specific etchant, without adding the specific etchant to the transfer sacrificial layer 130 multiple times, thereby improving etching efficiency.
Further, the specific etchant mentioned above may be an etchant for anisotropically etching the transfer sacrificial layer 130 to etch the transfer sacrificial layer 130 at different rates in different exposed planes.
Different from the prior art, the transfer sacrificial layer is stacked on the main surface of the substrate main body, the main surface is further integrally formed with a plurality of transfer support structures which are arranged at intervals and protrude out of the main surface, the end portions, far away from the substrate main body, of the transfer support structures are exposed out of the transfer sacrificial layer, and the tolerance of the substrate main body to a specific etching solution is higher than that of the transfer sacrificial layer. After the LED unit is generated subsequently, the transfer sacrificial layer is etched through a specific etchant, and the substrate main body and the transfer support structure which are of an integral structure are reserved so as to support the LED unit in a suspension mode relative to the substrate main body through the transfer support structure, wherein the transfer support structure is used as a weakening structure in the subsequent process, and therefore the LED unit can be conveniently separated from the weakening structure under the action of relatively small external force. Meanwhile, the transfer support structure is directly supported between the LED units and the substrate main body, so that the arrangement density of the LED units on the substrate can be improved, the loss of the area of an LED chip is reduced, and the manufacturing cost of the LED is reduced.
As shown in fig. 3, each of the transfer support structures 120 includes a support pillar 122 embedded in the transfer sacrificial layer 130 and a support head 123 connected to the support pillar 122 and protruding from the transfer sacrificial layer 130. It is understood that the transfer sacrificial layer 130 is filled between the support pillars 122.
Wherein the outer side surface of the support head 123 is in arc transition in the direction away from the substrate main body 110, and the cross-sectional dimension r2 of the support head 123 along the parallel direction D1 of the main surface 111 is gradually reduced in the direction away from the substrate main body (the direction opposite to D2) to form a Mongolian yurt form, which is convenient for the separation of the following LED units. In other embodiments, the support head 123 may be designed to be cylindrical, hemispherical, conical, truncated cone, or any other shape.
Wherein the height D2 of the supporting pillars 122 is in the range of 0.1-10 microns, and the cross-sectional dimension r2 of the supporting pillars 122 along the parallel direction D1 of the main surface 111 is in the range of 0.1-10 microns; the height d3 of the support head 123 is in the range of 0.1-10 microns.
As shown in fig. 4 and 5, the present application also proposes a method of manufacturing the substrate 100, which is used to manufacture the substrate 100 in the above-described embodiment. The method comprises the following steps:
s11: a substrate body 110 is provided.
The one-side main surface 111 of the substrate main body 110 is subjected to a patterning process to form a plurality of transfer support structures 120 spaced apart from each other on the one-side main surface 111 of the substrate main body 110. The material of the substrate body 110 and the transfer support structure 120 of the unitary structure may particularly comprise sapphire.
S12: a transfer sacrificial layer 130 is formed on one main surface 111 of the substrate body 110.
Specifically, the material of the transfer sacrificial layer 130 may specifically include SiO2SiN or Al2O3. Wherein a silica sol layer may be formed on one main surface 111 of the substrate main body 110, and the substrate main body 110 having the silica sol layer formed thereon may be subjected to a drying process to prepare SiO on the substrate main body 1102A transfer sacrificial layer 130; or depositing SiO on the main surface 111 of the substrate body 110 using PECVD2Or SiN transfer sacrificial layer 130; or depositing SiO on the main surface 111 of the substrate body 110 using LPCVD2Or SiN transfer sacrificial layer 130; or growing Al on the main surface 111 of the substrate main body 110 by magnetron sputtering2O3A transfer sacrificial layer 130; or depositing SiO by ALD (Atomic Layer Deposition)2Or Al2O3The sacrificial layer 130 is transferred.
The sacrificial transfer layer 130 may be patterned to form a plurality of openings 131 spaced apart from each other in the sacrificial transfer layer 130, the support transfer structure 120 is disposed through the openings 131, and an end 121 of the support transfer structure 120 away from the substrate body 110 is exposed through the plurality of openings 131.
The patterning process may form the openings 131 by a suitable patterning technique, such as dry etching, wet etching or other suitable techniques. For example, a mask is covered on the transfer sacrificial layer 130. The transfer sacrificial layer 130 at the position not covered by the mask is removed by an etching technique to form a plurality of openings 131. The shape of the openings 131 may be a rounded square, a circle or an ellipse, and the opening areas of the openings 131 may be equal or unequal, which is not limited herein.
The substrate body 110 and the transfer support structure 120 are more resistant to a specific etchant than the transfer sacrificial layer 130.
The transfer support structure 120 is used as a weakening structure in a subsequent process, and when the transfer sacrificial layer 130 is etched by a specific etchant in the subsequent process, the substrate main body 110 and the transfer support structure 120 for supporting the LED unit are retained, so that the LED unit is supported in the air by the transfer support structure 120 relative to the substrate main body 110, and the LED unit is conveniently separated from the weakening structure under the action of a relatively small external force. Meanwhile, since the transfer support structure 120 is directly supported between the LED units and the substrate main body, the arrangement density of the LED units on the substrate can be increased, the loss of the LED chip area can be reduced, and the manufacturing cost of the LED can be reduced.
Further included in step S11 is: the one-side main surface 111 of the substrate main body 110 is subjected to patterning processing to form a plurality of support columns 122 spaced apart from each other and support heads 123 connected to the support columns 122 on the one-side main surface 111 of the substrate main body 110. The cross-sectional dimension r2 of the support head 123 in the parallel direction D1 of the main surface 111 becomes gradually smaller in a direction away from the substrate main body 110 (the opposite direction to D2).
Specifically, a mask is coated on one main surface 111 of the substrate body 110, and at least a portion of the substrate body 110 where the mask is not coated is removed by controlling an etching time to form a plurality of supporting posts 122 spaced apart from each other and supporting heads 123 connected to the supporting posts 122.
After step S12, the supporting pillar 122 is embedded in the sacrificial transfer layer 130, and the supporting head 123 is connected to the supporting pillar 122 and protrudes from the sacrificial transfer layer 130.
A method for manufacturing the LED of the present application will be described below by taking the substrate 100 as an example.
As shown in fig. 6 and 10, the present application also proposes a method of manufacturing an LED chip, the method including:
s21: a substrate 100 is provided.
Specifically, the substrate 100 is the substrate 100 in the above embodiment, and for the specific structure, please refer to the description related to the substrate 100 in the above embodiment, which is not repeated herein.
S22: a light emitting epitaxial layer 140 is formed on a side of the transfer sacrificial layer 130 remote from the substrate body 110.
Specifically, the light emitting epitaxial layer 140 is a multilayer structure, and specifically includes: a first conductive type semiconductor layer 141, a quantum well layer 142, and a second conductive type semiconductor layer 143.
The first conductive type semiconductor layer 141, the quantum well layer 142, and the second conductive type semiconductor layer 143 may be sequentially grown on the side of the transfer sacrificial layer 130 away from the substrate body 110 using an MOCVD method. The current diffusion layer 144 is further formed by other processes.
The quantum well layer 142 may be an MQWs structure including a plurality of stacked single-layer quantum wells (SQWs). The MQWs structure retains the advantages of SQW and has a larger volume of active region that allows for high optical power. In other embodiments, the first conductive type semiconductor layer 141 and the second conductive type semiconductor layer 143 may be a single layer or a multi-layer structure of any other suitable material having different conductive types.
S23: the light emitting epitaxial layer 140 is patterned to form a plurality of LED units.
Specifically, an etching process is applied to pattern the light emitting epitaxial layer 140 and the current spreading layer 144, wherein the etching process may include dry etching, wet etching, or a combination thereof.
The LED unit may be a flip-chip LED, a vertical LED, or a front-mounted LED, which is not limited herein.
S24: the transfer sacrificial layer 130 is etched such that a plurality of LED units are separated from the transfer sacrificial layer 130 and are supported on the substrate body 110 by different transfer support structures 120, respectively.
The transfer sacrificial layer 130 is etched using a specific etchant, and the transfer support structure 120 for the difference, one end of which is supported by the substrate body 110 and the other end of which is supported by the LED unit, may be exposed by etching the transfer sacrificial layer 130.
The transfer support structure 120 serves as a weakening structure in the subsequent process, and the LED unit can be separated from the weakening structure by an external force.
As shown in fig. 7 and 10, when the LED unit is a flip-chip light emitting diode, step S22 includes the steps of:
s221: a buffer layer 150 is formed on the side of the transfer sacrificial layer 130 remote from the substrate body, wherein the buffer layer 150 covers the end portion 121 of the transfer support structure 120 and forms a flat surface 151 on the side remote from the substrate body 110.
Specifically, the buffer layer 150 is an AlN, AlGaN, GaN, or AlN/AlGaN/GaN composite buffer layer structure.
The buffer layer 150 is prepared by two methods, one of which is a conventional MOCVD method, in which an organic compound of a group iii element and a hydride of a group V or vi element are used as crystal growth source materials, and vapor phase epitaxial growth is performed on the substrate 100 by a thermal decomposition reaction. In other embodiments, the deposition process may also be accomplished by means such as physical vapor deposition, sputtering, hydrogen vapor deposition, or atomic layer deposition.
The buffer layer 150 covers the end portion 121 of the transfer support structure 120 and the buffer layer 150 includes a flat surface 151 on a side away from the substrate body 110.
Due to stress caused by the difference in thermal expansion coefficient between the transfer sacrificial layer 130 and the transfer support structure 120, fracture occurs at the interface of the transfer sacrificial layer 130 and the end portion 121 of the transfer support structure 120, whereby the transfer sacrificial layer 130 is easily separated from the transfer support structure 120. Therefore, the present embodiment can also reduce the stress and defects at the interface between the transfer sacrificial layer 130 and the end portion 121 of the transfer support structure 120 through the adjustment of the buffer layer 150.
S222: a light emitting epitaxial layer 140 including a first conductive type semiconductor layer 141, a quantum well layer 142, and a second conductive type semiconductor layer 143 is formed on the flat surface 151.
The first conductive type semiconductor layer 141 is grown on the flat surface 151, and the first conductive type semiconductor layer 141 is an n-type GaN layer, for example, a GaN layer doped with at least one of Si, Ge, and Sn. Next, a quantum well layer 142 is grown on the first conductive type semiconductor layer 141, and the quantum well layer 142 may have any one of the following structures: single layer quantum wells (SQW) and InGaN/GaN Multilayer Quantum Wells (MQW). Then, a second conductive type semiconductor layer 143 is grown on the quantum well layer 142, and the second conductive type semiconductor layer 143 is a p-type GaN layer, for example, a GaN layer doped with at least one of Mg, Zn, Be, Ca, Sr, and Ba. Thus, the light emitting epitaxial layer 140 is completed.
S223: a current spreading layer 144 is formed on the light emitting epitaxial layer 140.
Finally, a current diffusion layer 144 is grown on the second conductive type semiconductor layer 143 of the light emitting epitaxial layer 140 using an electron beam evaporation or magnetron sputtering method.
The current spreading layer 144 may employ a transparent conductive material, such as Indium Tin Oxide (ITO). In other embodiments, the current spreading layer 144 may be a metal mirror layer including silver (Ag), nickel (Ni), platinum (Pt), or other suitable metals.
As shown in fig. 8 and 10, step S23 includes:
s231: the current spreading layer 144 and the light emitting epitaxial layer 140 are patterned once to form a plurality of mesa structures 170 spaced apart from each other and exposing portions of the first conductive type semiconductor layer 141.
Specifically, an etching process is applied to remove a portion of the quantum well layer 142 and the second conductive type semiconductor layer 143, so as to form a first trench 161 on the quantum well layer 142 and the second conductive type semiconductor layer 143, the first trench 161 divides the quantum well layer 142 and the second conductive type semiconductor layer 143 into a plurality of spaced-apart mesa structures 170 arranged in an array, and the first conductive type semiconductor layer 141 is exposed in a region of the first trench 161. The etching process may include dry etching, wet etching, or a combination thereof.
In an alternative embodiment, the first trench 161 may be formed by the following process, further using a mask: a mask is formed on the second conductive type semiconductor layer 143, the mask is patterned using a photolithography process, and the light emitting epitaxial layer 140 is etched using the patterned mask as an etching mask to form the first trench 161.
Further, the patterned current diffusion layer 144 may be used as a mask and is not removed after the first trench 161 is etched. The current diffusion layer 144 may include a plurality of metal films for various functions. The current diffusion layer 144 may include a metal film as a contact electrically connected to the p-type semiconductor layer. The current spreading layer 144 may employ a transparent conductive material, such as Indium Tin Oxide (ITO). In other embodiments, the current spreading layer 134 may be a metal mirror layer including silver (Ag), nickel (Ni), platinum (Pt), or other suitable metals.
S232: first and second conductive type electrodes 151 and 152 electrically connected to the first and second conductive type semiconductor layers 141 and 143, respectively, are formed on the exposed portion of the first conductive type semiconductor layer 141 and the current diffusion layer 144.
The first conductive type semiconductor layer 141 is an n-type semiconductor layer (e.g., an n-type GaN layer), the second conductive type semiconductor layer 143 is a p-type semiconductor layer (e.g., a p-type GaN layer), the corresponding first conductive type electrode 151 is an n-type electrode, and the corresponding second conductive type electrode 152 is a p-type electrode.
Specifically, the Cr/Al/Ti metal is formed on the exposed surface of the first conductive type semiconductor layer 141 to form the first conductive type electrode 151, so that the first conductive type electrode 151 is an n-type electrode, and the first conductive type electrode 151 is electrically connected to the first conductive type semiconductor layer 141, for example, in the present embodiment, the first conductive type electrode 151 is electrically connected to the first conductive type semiconductor layer 141 by direct contact.
The second conductive type electrode 152 is formed by forming Ni/Au metal on the current diffusion layer 144, so that the second conductive type electrode 152 is a p-type electrode, and the second conductive type electrode 152 is electrically connected to the second conductive type semiconductor layer 143.
S233: the first conductive type semiconductor layer 141 and the buffer layer 150 are secondarily patterned from the spaced regions between the mesa structures 170 to form a plurality of LED units.
Wherein each LED unit includes at least one mesa structure 170, at least one first conductive-type electrode 151, and at least one second conductive-type electrode 152.
Specifically, an etching process is applied to remove the spacer region first conductive type semiconductor layer 141 and the buffer layer 150 between the mesa structures 170 to form the respective second trenches 162 defining the respective LED units on the quantum well layer 142 and the second conductive type semiconductor layer 143. Wherein the second trench 162 may be formed through a process including a photolithography patterning process and an etching process.
Further, the insulating layer 190 is covered on the upper surface and the peripheral side wall surface of the reflective layer, the side wall surface of the first trench 161, the side wall surface of the second trench 162, the outer edge of the first conductive-type electrode 151, and the outer edge of the second conductive-type electrode 152 by using various suitable processes such as ALD, PECVD, sputtering, or spraying, and the insulating layer 190 may be made of one of aluminum nitride, silicon dioxide, silicon nitride, aluminum oxide, bragg reflective layer DBR, silica gel, resin, or acrylic.
Note that a surface of the first conductivity-type electrode 151 on a side away from the current diffusion layer 144 and a surface of the second conductivity-type electrode 152 on a side away from the current diffusion layer 144 are at least partially not covered with the insulating layer 190, i.e., are exposed surfaces.
On the exposed surfaces of the first and second conductive- type electrodes 151 and 152 and the surface of the insulating layer 190 between the first and second conductive- type electrodes 151 and 152, first and second pads 181 and 182 insulated from each other are manufactured by a printing, electroplating, electron beam evaporation, or magnetron sputtering process, wherein the first pad 181 is electrically connected by directly contacting the first conductive-type electrode 151, and the second pad 182 is electrically connected by directly contacting the second conductive-type electrode 152, thus completing the LED unit.
It is to be noted that, although the flip-chip structure LED is described as an example in the present application, the substrate 100 of the present application is also applicable to the manufacture of vertical structure LEDs and forward structure LEDs.
In one embodiment, the material of the substrate body 110 is GaAs; in the light emitting epitaxial layer 140, the first conductive type semiconductor layer 141 is made of AlInGaP; the quantum well layer 142 is made of AlInGaP; the material of the second conductive type semiconductor layer 143 is AlInP; the material of the current diffusion layer 144 is GaP; the material of the first and second conductive type electrodes 151 and 152 is Au.
As shown in fig. 9 and 11, step S24 includes:
s241: the transfer sacrificial layer 130 is once etched from the spaced area between the LED units to form a groove 102 extending to a certain depth inside the transfer sacrificial layer 130.
S242: the transfer sacrificial layer 130 is etched from the groove 102 using a specific etchant.
Specifically, to secure the etching depth of the transfer sacrificial layer 130, one etching of the transfer sacrificial layer 130 from the spaced area between the LED units is required.
Different from the prior art, the transfer sacrificial layer is stacked on the main surface of the substrate main body, the main surface is further integrally formed with a plurality of transfer support structures which are arranged at intervals and protrude out of the main surface, the end portions, far away from the substrate main body, of the transfer support structures are exposed out of the transfer sacrificial layer, and the tolerance of the substrate main body to a specific etching solution is higher than that of the transfer sacrificial layer. After the LED unit is generated subsequently, the transfer sacrificial layer is etched through a specific etchant, and the substrate main body and the transfer support structure which are of an integral structure are reserved so as to support the LED unit in a suspension mode relative to the substrate main body through the transfer support structure, wherein the transfer support structure is used as a weakening structure in the subsequent process, and therefore the LED unit can be conveniently separated from the weakening structure under the action of relatively small external force. Meanwhile, the transfer support structure is directly supported between the LED units and the substrate main body, so that the arrangement density of the LED units on the substrate can be improved, the loss of the area of an LED chip is reduced, and the manufacturing cost of the LED is reduced.
As shown in fig. 12, an LED 200 according to an embodiment of the present application includes: a substrate main body 110, a plurality of transfer support structures 120 integrally formed on one main surface 111 of the substrate main body 110, and LED units 201.
The number of the LED units 201 is plural, the plural LED units 201 are respectively supported by different transfer support structures 120 and keep a certain interval with the substrate main body 110, and the LED units 201 are manufactured in the above embodiments. Wherein each LED unit includes at least one mesa structure 170, at least one first conductive type electrode 151, and at least one second conductive type electrode 152.
Different from the prior art, the transfer sacrificial layer is stacked on the main surface of the substrate main body, the main surface is further integrally formed with a plurality of transfer support structures which are arranged at intervals and protrude out of the main surface, the end portions, far away from the substrate main body, of the transfer support structures are exposed out of the transfer sacrificial layer, and the tolerance of the substrate main body to a specific etching solution is higher than that of the transfer sacrificial layer. After the LED unit is generated subsequently, the transfer sacrificial layer is etched through a specific etchant, and the substrate main body and the transfer support structure which are of an integral structure are reserved so as to support the LED unit in a suspension mode relative to the substrate main body through the transfer support structure, wherein the transfer support structure is used as a weakening structure in the subsequent process, and therefore the LED unit can be conveniently separated from the weakening structure under the action of relatively small external force. Meanwhile, the transfer support structure is directly supported between the LED units and the substrate main body, so that the arrangement density of the LED units on the substrate can be improved, the loss of the area of an LED chip is reduced, and the manufacturing cost of the LED is reduced.
The above embodiments are merely examples and are not intended to limit the scope of the present disclosure, and all modifications, equivalents, and flow charts using the contents of the specification and drawings of the present disclosure or those directly or indirectly applied to other related technical fields are intended to be included in the scope of the present disclosure.
Claims (5)
1. A method of manufacturing an LED, the method comprising:
providing a substrate; wherein the substrate comprises: a substrate main body, wherein a plurality of transfer support structures which are arranged at intervals and protrude from the main surface are integrally formed on one main surface of the substrate main body; a transfer sacrificial layer stacked on the substrate bodyA transfer sacrificial layer on the major surface and exposing an end of the transfer support structure distal to the substrate body from the transfer sacrificial layer, wherein the substrate body is more resistant to a particular etchant than the transfer sacrificial layer; the specific etching solution is organic acid or organic acid/H2O2Mixed solution, or NH4OH/H2O2Mixed solution, or H3PO4/H2O2Mixing the solution;
forming a light-emitting epitaxial layer on one side of the transfer sacrificial layer far away from the substrate main body;
patterning the light emitting epitaxial layer to form a plurality of LED units;
etching the transfer sacrificial layer to separate the plurality of LED units from the transfer sacrificial layer and to be supported by different transfer support structures, respectively;
wherein the step of forming a light emitting epitaxial layer on a side of the transfer sacrificial layer away from the substrate body comprises:
forming a buffer layer on a side of the transfer sacrificial layer away from the substrate body, wherein the buffer layer covers an end of the transfer support structure and forms a flat surface on a side away from the substrate body;
sequentially forming a first conductive type semiconductor layer, a quantum well layer, a second conductive type semiconductor layer and a current diffusion layer on the flat surface;
the step of patterning the light emitting epitaxial layer comprises:
patterning the current diffusion layer, the second conductive type semiconductor layer, the quantum well layer and the first conductive type semiconductor layer for the first time to form a plurality of mesa structures which are arranged at intervals and expose parts of the first conductive type semiconductor layer;
forming a first conductive type electrode and a second conductive type electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, at the exposed portion of the first conductive type semiconductor layer and the current diffusion layer;
and performing secondary patterning on the first conductive type semiconductor layer and the buffer layer from a spacing region between the mesa structures to form a plurality of LED units, wherein each LED unit comprises at least one mesa structure, at least one first conductive type electrode and at least one second conductive type electrode.
2. The method of claim 1, wherein the step of etching the transfer sacrificial layer comprises:
etching the transfer sacrificial layer for the first time from the interval region between the LED units to form a groove extending to a certain depth in the transfer sacrificial layer;
and etching the transfer sacrificial layer from the groove by using a specific etching solution.
3. The method of claim 1, wherein the material of the substrate body is sapphire and the material of the transfer sacrificial layer is SiO2SiN or Al2O3。
4. The method of claim 1, wherein the material of the substrate body is GaAs and the material of the transfer sacrificial layer is AlGaAs, InGaAs or AlInGaAs.
5. The method according to claim 1, wherein each of the transfer support structures comprises a support post embedded in the interior of the transfer sacrificial layer and a support head connected to the support post and protruding from the transfer sacrificial layer, the support head having a cross-sectional dimension along the parallel direction of the main surface that gradually decreases in a direction away from the substrate main body.
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